The invention, in various embodiments, relates generally to methods for selectively permeating self-assembled block copolymers with metal oxides to form metal oxide structures, to methods of forming semiconductor structures using such metal oxide structures, and to semiconductor structures including the metal oxide structures.
The economics (i.e., cost per die) of electronic components improves significantly as feature size becomes smaller. As the size of device features becomes ever smaller, conventional lithographic processes become increasingly more difficult and expensive to use. Therefore, significant challenges are encountered in the fabrication of nanostructures, particularly structures having a feature size of less than 50 nm.
It is possible to fabricate isolated or semi-dense structures at this scale using a conventional lithographic process such as, for example, nanoimprint lithography, laser interferometry, extreme ultraviolet interference lithography, shadow mask lithography, e-beam lithography, or scanning-probe-microscopy-based lithography. However, such techniques are limited because the exposure tools are extremely expensive or extremely slow and, further, may not be amenable to formation of structures having dimensions of less than 50 nm.
The development of new processes and materials is of increasing importance in making fabrication of small-scale devices easier, less expensive, and more versatile. One example of a method of patterning that addresses some of the drawbacks of conventional lithographic techniques is block copolymer lithography, where use is made of polymer masks derived from self-assembly of block copolymers. Block copolymers are known to form nano-scale microdomains by microphase separation. When cast on a substrate and annealed, block copolymers form nano-scale periodic patterns that may be useful as an etch mask in semiconductor device fabrication. Such ordered patterns of isolated nano-sized structural units formed by the self-assembled block copolymers may potentially be used for fabricating periodic nano-scale structural units and, therefore, have promising applications in semiconductor, optical, and magnetic devices. Dimensions of the structural units so formed are typically in the range of 5 nm to 50 nm, which dimensions are extremely difficult to define using conventional lithographic techniques. The size and shape of these domains may be controlled by manipulating the molecular weight and composition of the copolymer. Additionally, the interfaces between these domains have widths on the order of 1 nm to 5 nm and may be controlled by changing the chemical composition of the blocks of the copolymers. However, the domains of the self-assembling block copolymers often have little or no etch selectivity for one another. Therefore, improving etch selectivity of the self-assembled domains is desirable.
Buriak et al., “Assembly of Aligned Linear Metallic Patterns on Silicon,” Nature Nanotechnology, 2, 500-506 (August 2007), discloses forming aligned metal lines by metal loading self-assembled monolayers of aligned, horizontal block copolymer cylinders using an aqueous solution of an anionic metal complex.
Cha et al., “Biomimetic Approaches for Fabricating High-Density Nanopatterned Arrays,” Chem. Mater., 19, 839-843 (2007), discloses using the self-assembling properties of AB diblock copolymers to make polymer thin films as nanometer etch masks. A more etch-resistant film is formed by enriching the domains within the block polymer thin films with metals such as silicon.
Chai and Buriak, “Using Cylindrical Domains of Block Copolymers to Self-Assemble and Align Metallic Nanowires,”ACS Nano, 2 (3), 489-501 (2008), discloses metal ion loading of self-aligned polystyrene-poly(2-vinylpyridine) block copolymers on silicon surfaces using aqueous solutions of anionic metal complexes. The basic poly(2-vinylpyridine) is protonated, rendering it cationic so that electrostatic attraction leads to a high local concentration of metal complexes within the poly(2-vinylpyridine) domain. A plasma etching process is performed to remove the polymer and form metallic nanowires.
To achieve higher-density circuits, storage devices, or displays, there is a need for less expensive fabrication techniques which are suitable for fabricating complex devices with the required enhanced density and reliable addressability of elements to meet future demands.
As discussed in further detail below, in some embodiments, the present invention comprises methods of selective permeation or impregnation of metal oxides into a self-assembled block copolymer and methods of forming metal oxide structures utilizing the controlled formation of block copolymers. In other embodiments, the present invention includes a semiconductor structure including a pattern of such metal oxide structures.
As used herein, the term “substrate” means and includes a base material or construction upon which materials are formed. The substrate may be a semiconductor substrate, a base semiconductor layer on a supporting structure, a metal electrode or a semiconductor substrate having one or more layers, structures or regions formed thereon. The substrate may be a conventional silicon substrate or other bulk substrate comprising a layer of semiconductive material. As used herein, the term “bulk substrate” means and includes not only silicon wafers, but also silicon-on-insulator (“SOI”) substrates, such as silicon-on-sapphire (“SOS”) substrates and silicon-on-glass (“SOG”) substrates, epitaxial layers of silicon on a base semiconductor foundation, and other semiconductor or optoelectronic materials, such as silicon-germanium, germanium, gallium arsenide, gallium nitride, and indium phosphide. The substrate may be doped or undoped.
As used herein, the term “block copolymer” means and includes polymers that include one or more long sequences (i.e., “blocks”) of the same monomeric unit(s) covalently bound to one or more long sequences (i.e., “blocks”) of unlike type, for example, including differing monomeric unit(s). A wide variety of block copolymers are contemplated herein including diblock copolymers (copolymers having two blocks), triblock copolymers (copolymers having three blocks), multiblock copolymers (copolymers having more than three blocks), and combinations thereof.
The term “phase separation,” as used herein means and includes the properties by which homogenous polymers or homogenous segments of a block copolymer aggregate mutually, and heterogeneous polymers or heterogeneous segments separate into distinct domains.
The term “annealing” or “anneal” as used herein means and includes treatment of the block copolymer so as to enable sufficient phase separation between the two or more different polymeric block components of the block copolymer to form an ordered pattern defined by repeating structural units. Annealing of the block copolymer in the present invention may be achieved by various methods known in the art, including, but not limited to: thermal annealing (either in a vacuum or in an inert atmosphere containing nitrogen or argon), solvent vapor-assisted annealing (either at or above room temperature), or supercritical fluid-assisted annealing. As a specific example, thermal annealing of the block copolymer may be conducted by exposing the block copolymer to an elevated temperature that is above the glass transition temperature (Tg), but below the degradation temperature (Td) of the block copolymer, as described in greater detail hereinafter. Other conventional annealing methods not described herein may also be utilized.
The term “preferential wetting,” as used herein, means and includes wetting of a block copolymer wherein one block of the block copolymer will wet a contacting surface at an interface more easily than the other block(s).
The following description provides specific details, such as material types, material thicknesses, and processing conditions in order to provide a thorough description of embodiments of the invention. However, a person of ordinary skill in the art will understand that the embodiments of the invention may be practiced without employing these specific details. Indeed, the embodiments of the invention may be practiced in conjunction with conventional semiconductor fabrication techniques employed in the industry. In addition, the description provided below does not form a complete process flow for manufacturing a semiconductor device in which the metal oxide structure is present, and the semiconductor devices described below do not form a complete electronic device. Only those process acts and metal oxide structures or semiconductor devices necessary to understand the embodiments of the invention are described in detail below. Additional processing acts to form a complete semiconductor device from the metal oxide structures or to form a complete electronic device from the semiconductor device may be performed by conventional fabrication techniques, which are not described herein.
The materials described herein may be formed by any suitable technique including, but not limited to, spin coating, blanket coating, chemical vapor deposition (“CVD”), atomic layer deposition (“ALD”), plasma enhanced ALD, or physical vapor deposition (“PVD”). Alternatively, the materials may be grown in situ. Depending on the specific material to be formed, the technique for depositing or growing the material may be selected by a person of ordinary skill in the art. While the materials described and illustrated herein may be formed as layers, the materials are not limited thereto and may be formed in other three-dimensional configurations.
Reference will now be made to the figures, wherein like numerals represent like elements. The figures are not necessarily drawn to scale.
Referring still to
Referring still to
The block copolymer material 112 may include at least two copolymer blocks that are substantially immiscible in one another. By way of non-limiting example, the block copolymer material 112 may be a diblock copolymer that includes a hydrophilic block and a hydrophobic block, which may be capable of undergoing phase separation, which is described in further detail below. The block copolymer material 112 may include the hydrophilic block and the hydrophobic block at a ratio in a range of from about 80:20 by weight to about 50:50 by weight and, more specifically, at a ratio of about 70:30 by weight.
The hydrophilic block may include a polymer formulated for swelling or wetting upon contact with a solvent, such as an alcohol. By way of non-limiting example, the hydrophilic block polymer may include polyvinylpyridine (PVP), hydroxypropyl methylcellulose (HPMC), polyethylene glycol (PEG), poly(ethylene oxide)-co-poly(propylene oxide) di- or multiblock copolymers, poly(ethylene oxide) (PEO), poly(vinyl alcohol) (PVA), poly(ethylene-co-vinyl alcohol), poly(acrylic acid), poly(ethyloxazoline), a poly(alkylacrylate), poly(acrylamide), a poly(N-alkylacrylamide), a poly(N,N-dialkylacrylamide), poly(propylene glycol) (PPG), poly(propylene oxide), partially or fully hydrolyzed poly(vinyl alcohol), dextran, and copolymers and combinations thereof.
The hydrophobic block may include a polymer insoluble in the solvent, such as an alcohol, which results in swelling or wetting the hydrophilic block upon contact. As a non-limiting example, the hydrophobic block may include polystyrene (PS), polyethylene (PE), polypropylene (PP), polychloroprene (CR), a polyvinyl ether, poly(vinyl acetate) (PVAc), poly(vinyl chloride) (PVC), a polysiloxane, a polyurethane (PU), a polyacrylate, a polyacrylamide, and copolymers and mixtures thereof.
By way of non-limiting example, block copolymer materials 112 that may be used for forming the self-assembled copolymer may include polystyrene-block-polyvinylpyridine (PS-b-PVP), polystyrene-block-polymethylmethacrylate (PS-b-PMMA), polyethyleneoxide-block-polyisoprene (PEO-b-PI), polyethyleneoxide-block-polybutadiene (PEO-b-PBD), polyethyleneoxide-block-polystyrene (PEO-b-PS), polyethyleneoxide-block-polymethylmethacrylate (PEO-b-PMMA), polyethyleneoxide-block-polyethylethylene (PEO-b-PEE), polystyrene-block-polyisoprene (PS-b-PI), polystyrene-block-polybutadiene (PS-b-PBD), polystyrene-block-polyferrocenyldimethylsilane (PS-b-PFS), polybutadiene-block-polyvinylpyridine (PBD-b-PVP), and polyisoprene-block-polymethylmethacrylate (PI-b-PMMA). As described above, the block copolymer may be a diblock copolymer. However, block copolymers having three (a triblock copolymer) or more (a multiblock copolymer) blocks may also be used. One example of a triblock copolymer includes, but is not limited to, poly(styrene-block methyl methacrylate-block-ethylene oxide). Multiblock copolymers may have three or more blocks selected from the following: polystyrene, polymethylmethacrylate, polyethyleneoxide, polyisoprene, polybutadiene, poly lactic acid, polyvinylpyridine, and combinations thereof.
Referring to
Each of the domains 118 includes self-aggregated minority block portions of polymer chains held together by a non-covalent bond and is aligned parallel to an axis of the trench 110. By way of non-limiting example, phase separation of the block copolymer material 112 may result in the formation of a self-assembled film 116 including an ordered array 117 of domains 118 surrounded by the matrix 120. For example, where the block copolymer material 112 includes the hydrophilic block and the hydrophobic block, the domains 118 may include the hydrophilic block, and the matrix 120 may include the hydrophobic block. The number of domains 118 may be determined by the width of the trench 110 together with the inherent periodicity (Lo). Based on the periodicity (Lo) of the copolymer, the width of the trench 110 may be controlled to form a number (n) of trenches determined width/periodicity, which may be for example, sufficient to form a number of domains 118 in a range of from about one to about fifty (50). Additionally, an interface material 122 including the hydrophilic block may form at an interface between the matrix 120 and the underlying material of the insulative material 108.
For the sake of clarity, the domains 118 are shown in
In some embodiments, the block copolymer material 112 may be heated to a temperature at or above a glass transition temperature and below a decomposition temperature of the copolymer blocks either in a vacuum or in an inert atmosphere, to cause the block copolymer material 112 to phase separate and form the self-assembled film 116. The inert atmosphere may include, by way of non-limiting example, nitrogen or argon. For example, the block copolymer material 112 may be heated to a temperature in a range of from about 130° C. to about 275° C.
In additional embodiments, the block copolymer material 112 may be exposed to a solvent vapor to cause phase separation and the formation of ordered domains 118. The solvent vapor may be formed by converting a solvent capable of initiating phase separation to the gas phase. By way of non-limiting example, the solvent vapor may be formed from toluene, tetrahydrofuran, dimethylformamide, and combinations thereof. For example, the block copolymer material 112 may be annealed exposing the block copolymer material 112 to toluene vapor at a temperature of greater than or equal to about 24° C.
By way of non-limiting example, when the copolymer block material 112 is polystyrene-block-polyvinylpyridine, the polyvinylpyridine may preferentially wet the lower surface 111 and sidewalls 113 of the trench 110 during the annealing process, while the polystyrene may preferentially wet the air interface, resulting in the formation of the interface material 122 of polyvinylpyridine as well as repeating cylindrical domains 118 including polyvinylpyridine, each having an axis 125 parallel to an axis of the trench 110 and disposed within the matrix 120 including polystyrene.
Referring to
In some embodiments, the swelling agent comprises polar solvent, such as an alcohol, and may be applied to form the swollen domains 126 prior to exposure to a metal oxide precursor. In additional embodiments, the swelling agent may include only the metal oxide precursor 124, or may include a mixture of a solvent, such as a polar solvent, and the metal oxide precursor 124, and may selectively solubilize or permeate the domains 118 (
By way of non-limiting example, the self-assembled film 116 (
Additionally, the swelling agent including the metal oxide precursor 124 may be applied to the self-assembled film 116 as a mixture of an alcohol, such as methanol, ethanol, or isopropanol, and titanium tetraisopropoxide having a volumetric ratio of about 2:1. As another non-limiting example, the swelling agent may be poly (dimethylsiloxane) dissolved in a solvent, which may be applied over the domains 118 by, for example, by spin-casting, and may be heated to about 80° C. and soaked for at least 6 hours to selectively permeate the domains 118.
In additional embodiments, the swelling agent may include a neat metal oxide precursor 124 such as, for example, tetraethylorthosilicate, which may be applied to the self-assembled film 116 in the absence of another solvent. Upon contact with the self-assembled film 116, the metal oxide precursor 124 of the swelling agent may be absorbed into the domains 118 (
Referring still to
As shown in
As a result of removing the matrix 120, and optionally, the polymer material remaining in the swollen domains 126 and the interface material 122, a pattern 132 of laterally spaced metal oxide structures 130 may remain on the surface of the semiconductor structure 100. The metal oxide structures 130 may include a metal oxide material. The metal oxide structures 130 may be laterally spaced from one another by a distance d2 (i.e., the center-to-center distance between metal oxide structures 130), which may be about one-half the distance d1 (i.e., the center-to-center distance between swollen domains 126 shown in
Additionally, a portion of the matrix 120 may be removed using a conventional calcination process in a reactive ambient gas, such as oxygen or ammonia, to remove remaining organic residues. The resulting metal oxide structures 130 may be densified or hardened in comparison to the swelled domains 126 (
Referring to
After removing the exposed portion of the insulative material 108, a portion of the semiconductive material 106 exposed through the apertures 134 may be selectively removed with respect to the metal oxide structures 130 using a dry plasma reactive ion etching (RIE) process. Subsequently, the underlying dielectric material 104 exposed through the apertures 134 may be removed using, for example, a dry plasma reactive ion etching (RIE) process. The semiconductive material 106 and the dielectric material 104 exposed through the apertures 134 may be removed using a single dry etching process or multiple dry etching processes.
The following examples serve to illustrate embodiments of the present invention in more detail. These examples are not to be construed as being exhaustive or exclusive as to the scope of this invention.
In each of the examples, a sample including a self-assembled film formed within trenches in a silicon dioxide material was used. To form the sample, a plurality of trenches having a width of about 200 nm were formed in a silicon dioxide material over and in contact with a polycrystalline silicon substrate using conventional deposition process and patterning processes. A polystyrene-block-polyvinylpyridine block (PS-b-PVP) copolymer material was spin-cast over the plurality of trenches in the silicon dioxide material to fill each of the trenches. The PS-b-PVP block copolymer was then heated to a temperature of about 200° C. to anneal the PS-b-PVP into a self-assembled film including ordered polyvinylpyridine (PVP) domains surrounded by a polystyrene (PS) matrix within each of the plurality of trenches. Each of the ordered PVP domains may have a width of about 20 nm.
After annealing the PS-b-PVP block copolymer material, the sample was immersed in tetraethylorthosilicate for about 2 hours at a temperature of about 25° C. in air ambient while the tetraethylorthosilicate was absorbed into the PVP block polymer without substantially absorbing into the PS matrix, which caused swelling of the PVP block polymer.
Excess tetraethylorthosilicate (i.e., tetraethylorthosilicate which was not absorbed into the PVP block polymer) was removed from the sample using a spin-off process performed at about 3000 RPM for about 3 minutes. The tetraethylorthosilicate within the PVP block polymer was immersed and stirred in a deionized water bath for about 10 minutes at a temperature of about 70° C. to form silicon dioxide lines.
A rapid thermal anneal was performed to develop the silicon dioxide lines exposing the silicon dioxide lines to ozone at a temperature of about 85° C. for about 10 minutes and, thereafter, performing an oxygen plasma etching process for about 20 seconds.
After annealing the PS-b-PVP block copolymer material, the sample was placed in a solution including a mixture of 2 parts by volume ethanol and 1 part by volume titanium tetra(isopropoxide). For about 1 hour, the self-assembled film was exposed to the ethanol/titanium tetra(isopropoxide) solution, which permeated the PVP block copolymer without substantially permeating the PS matrix, causing the ordered PVP domains to swell.
After exposure to the ethanol/titaniumtetra(isopropoxide) solution, the self-assembled film was rinsed with ethanol to remove residual polymer material and was air dried. The sample was then exposed to water vapor at a temperature of about 25° C. for about 16 hours, which resulted in conversion of titaniumtetra(isopropoxide) to titanium oxide within the ordered PVP domains.
A reactive ion etching process was performed using oxygen gas at a flow rate of about 20 sccm, a pressure of 50 mTorr, at about 34 Watts for about 120 seconds to remove the PS from the sample. To removed residues and reveal titanium oxide lines, an etching process using tetrafluoromethane (CF4) gas at a flow rate of about 100 sccm was performed.
After annealing, the sample was exposed to a solution of tetraethylorthosilicate at about 24.0° C. for about 1 hour to enable the tetraethylorthosilicate to selectively penetrate the PVP domains. The sample was then exposed to water vapor at a temperature of about 60.0° C. in the sealed reactor chamber for about 16 hours. After exposure to the water vapor, the TEOS within the PVP domains had been converted to silicon dioxide to form a plurality of silicon dioxide lines in the trenches.
A reactive ion etching process was performed using oxygen gas at a flow rate of about 20 sccm, a pressure of 50 mTorr, at about 34 Watts for about 120 seconds to remove the PS from the sample revealing silicon dioxide lines.
After annealing the PS-b-PVP block copolymer material, a layer of tetraethylorthosilicate was applied over the self-assembled film for about 2 hours to enable the tetraethylorthosilicate to permeate the PVP domains. Excess tetraethylorthosilicate was removed by spinning the sample at about 3000 rpm for about 3 seconds. Immediately after removal of the tetraethylorthosilicate, the sample was immersed in water at a temperature of about 70.0° C. for about 10 minutes.
The sample was dried and exposed to a vapor stream including 10% ozone/oxygen and was heated to a temperature of about 85.0° C. for about 10 minutes. The sample was dried and exposed to an oxygen plasma at a pressure of about 100 mTorr, at about 300 Watts for about 20 seconds. After treatment with the oxygen plasma, silicon dioxide lines were revealed in the PVP domains.
While the invention may be susceptible to various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and have been described in detail herein. However, it should be understood that the invention is not limited to the particular forms disclosed. Rather, the invention encompasses all modifications, variations and alternatives falling within the scope of the invention as defined by the following appended claims and their legal equivalents.
This application is a divisional of U.S. patent application Ser. No. 14/176,574, filed Feb. 10, 2014, now U.S. Pat. No. 9,276,059, issued Mar. 1, 2016, which is a continuation of U.S. patent application Ser. No. 13/335,107, filed Dec. 22, 2011, now U.S. Pat. No. 8,669,645, issued Mar. 11, 2014, which is a divisional of U.S. patent application Ser. No. 12/259,921, filed Oct. 28, 2008, now U.S. Pat. No. 8,097,175, issued Jan. 17, 2012, for METHOD FOR SELECTIVELY PERMEATING A SELF-ASSEMBLED BLOCK COPOLYMER, METHOD FOR FORMING METAL OXIDE STRUCTURES, METHOD FOR FORMING A METAL OXIDE PATTERN, AND METHOD FOR PATTERNING A SEMICONDUCTOR STRUCTURE. The disclosure of each of the foregoing documents is incorporated herein in its entirety by reference. This application is also related to U.S. patent application Ser. No. 11/766,663, filed Jun. 21, 2007, now U.S. Pat. No. 8,294,139, issued Oct. 23, 2012, for MULTILAYER ANTIREFLECTION COATINGS, STRUCTURES AND DEVICES INCLUDING THE SAME AND METHODS OF MAKING THE SAME. This application is also related to U.S. patent application Ser. No. 11/787,928, filed Apr. 18, 2007, now U.S. Pat. No. 7,959,975, issued Jun. 14, 2011, for METHODS OF PATTERNING A SUBSTRATE. This patent is also related to U.S. patent application Ser. No. 13/157,838, filed Jun. 10, 2011, now U.S. Pat. No. 8,956,713, issued Feb. 17, 2015, and U.S. patent application Ser. No. 13/613,358, filed Sep. 13, 2012, now U.S. Pat. No. 8,551,808, issued Oct. 8, 2013.
Number | Name | Date | Kind |
---|---|---|---|
4623674 | Bailey | Nov 1986 | A |
4797357 | Mura et al. | Jan 1989 | A |
4818713 | Feygenson | Apr 1989 | A |
4877647 | Klabunde | Oct 1989 | A |
5328810 | Lowrey et al. | Jul 1994 | A |
5374367 | Edamura et al. | Dec 1994 | A |
5382373 | Carlson | Jan 1995 | A |
5482656 | Hiraoka et al. | Jan 1996 | A |
5512131 | Kumar et al. | Apr 1996 | A |
5538655 | Fauteux et al. | Jul 1996 | A |
5580700 | Rahman | Dec 1996 | A |
5620850 | Bamdad et al. | Apr 1997 | A |
5622668 | Thomas et al. | Apr 1997 | A |
5772905 | Chou | Jun 1998 | A |
5834583 | Hancock et al. | Nov 1998 | A |
5849810 | Mueller | Dec 1998 | A |
5879582 | Havelka et al. | Mar 1999 | A |
5879853 | Azuma | Mar 1999 | A |
5891356 | Inoue et al. | Apr 1999 | A |
5904824 | Oh et al. | May 1999 | A |
5925259 | Biebuyck et al. | Jul 1999 | A |
5948470 | Harrison et al. | Sep 1999 | A |
5958704 | Starzl et al. | Sep 1999 | A |
6051869 | Pan et al. | Apr 2000 | A |
6111323 | Carter et al. | Aug 2000 | A |
6143647 | Pan et al. | Nov 2000 | A |
6153495 | Kub et al. | Nov 2000 | A |
6207787 | Fahey et al. | Mar 2001 | B1 |
6251791 | Tsai et al. | Jun 2001 | B1 |
6270946 | Miller | Aug 2001 | B1 |
6309580 | Chou | Oct 2001 | B1 |
6310138 | Yonezawa et al. | Oct 2001 | B1 |
6312971 | Amundson et al. | Nov 2001 | B1 |
6368871 | Christel et al. | Apr 2002 | B1 |
6403382 | Zhu et al. | Jun 2002 | B1 |
6414164 | Afzali-Ardakani et al. | Jul 2002 | B1 |
6423465 | Hawker et al. | Jul 2002 | B1 |
6423474 | Holscher | Jul 2002 | B1 |
6503841 | Criscuolo et al. | Jan 2003 | B1 |
6506660 | Holmes et al. | Jan 2003 | B2 |
6517933 | Soane et al. | Feb 2003 | B1 |
6518194 | Winningham et al. | Feb 2003 | B2 |
6537920 | Krivokapic | Mar 2003 | B1 |
6548830 | Noguchi et al. | Apr 2003 | B1 |
6565763 | Asakawa et al. | May 2003 | B1 |
6565764 | Hiraoka et al. | May 2003 | B2 |
6566248 | Wang et al. | May 2003 | B1 |
6569528 | Nam et al. | May 2003 | B2 |
6573030 | Fairbairn et al. | Jun 2003 | B1 |
6592764 | Stucky et al. | Jul 2003 | B1 |
6630520 | Bruza et al. | Oct 2003 | B1 |
6635912 | Ohkubo | Oct 2003 | B2 |
6656308 | Hougham et al. | Dec 2003 | B2 |
6679996 | Yao | Jan 2004 | B1 |
6682660 | Sucholeiki et al. | Jan 2004 | B2 |
6689473 | Guire et al. | Feb 2004 | B2 |
6699797 | Morris et al. | Mar 2004 | B1 |
6713238 | Chou et al. | Mar 2004 | B1 |
6746825 | Nealey et al. | Jun 2004 | B2 |
6767693 | Okoroanyanwu | Jul 2004 | B1 |
6780492 | Hawker et al. | Aug 2004 | B2 |
6781166 | Lieber et al. | Aug 2004 | B2 |
6797202 | Endo et al. | Sep 2004 | B2 |
6809210 | Chandross | Oct 2004 | B2 |
6812132 | Ramachandrarao et al. | Nov 2004 | B2 |
6825358 | Afzali-Ardakani et al. | Nov 2004 | B2 |
6884842 | Soane et al. | Apr 2005 | B2 |
6887332 | Kagan et al. | May 2005 | B1 |
6890624 | Kambe et al. | May 2005 | B1 |
6890703 | Hawker et al. | May 2005 | B2 |
6908861 | Sreenivasan et al. | Jun 2005 | B2 |
6911400 | Colburn et al. | Jun 2005 | B2 |
6913697 | Lopez et al. | Jul 2005 | B2 |
6924341 | Mays et al. | Aug 2005 | B2 |
6926953 | Nealey et al. | Aug 2005 | B2 |
6940485 | Noolandi | Sep 2005 | B2 |
6946332 | Loo et al. | Sep 2005 | B2 |
6949456 | Kumar | Sep 2005 | B2 |
6952436 | Wirnsberger et al. | Oct 2005 | B2 |
6957608 | Hubert et al. | Oct 2005 | B1 |
6962823 | Empedocles et al. | Nov 2005 | B2 |
6989426 | Hu et al. | Jan 2006 | B2 |
6992115 | Hawker et al. | Jan 2006 | B2 |
6995439 | Hill et al. | Feb 2006 | B1 |
6998152 | Uhlenbrock | Feb 2006 | B2 |
7001795 | Jiang et al. | Feb 2006 | B2 |
7009227 | Patrick et al. | Mar 2006 | B2 |
7030495 | Colburn et al. | Apr 2006 | B2 |
7037738 | Sugiyama et al. | May 2006 | B2 |
7037744 | Colburn et al. | May 2006 | B2 |
7045851 | Black et al. | May 2006 | B2 |
7056455 | Matyjaszewski et al. | Jun 2006 | B2 |
7056849 | Wan et al. | Jun 2006 | B2 |
7060774 | Sparrowe et al. | Jun 2006 | B2 |
7066801 | Balijepalli et al. | Jun 2006 | B2 |
7077992 | Sreenivasan et al. | Jul 2006 | B2 |
7087267 | Breen et al. | Aug 2006 | B2 |
7090784 | Asakawa et al. | Aug 2006 | B2 |
7112617 | Kim et al. | Sep 2006 | B2 |
7115305 | Bronikowski et al. | Oct 2006 | B2 |
7115525 | Abatchev et al. | Oct 2006 | B2 |
7115995 | Wong | Oct 2006 | B2 |
7118784 | Xie | Oct 2006 | B1 |
7119321 | Quinlan | Oct 2006 | B2 |
7132370 | Paraschiv et al. | Nov 2006 | B2 |
7135144 | Christel et al. | Nov 2006 | B2 |
7135241 | Ferraris et al. | Nov 2006 | B2 |
7135388 | Ryu et al. | Nov 2006 | B2 |
7135523 | Ho et al. | Nov 2006 | B2 |
7151209 | Empedocles et al. | Dec 2006 | B2 |
7163712 | Chilkoti et al. | Jan 2007 | B2 |
7166304 | Harris et al. | Jan 2007 | B2 |
7172953 | Lieber et al. | Feb 2007 | B2 |
7186613 | Kirner et al. | Mar 2007 | B2 |
7189430 | Ajayan et al. | Mar 2007 | B2 |
7189435 | Tuominen et al. | Mar 2007 | B2 |
7190049 | Tuominen et al. | Mar 2007 | B2 |
7195733 | Rogers et al. | Mar 2007 | B2 |
7202308 | Boussand et al. | Apr 2007 | B2 |
7208836 | Manning | Apr 2007 | B2 |
7252791 | Wasserscheid et al. | Aug 2007 | B2 |
7259101 | Zurcher et al. | Aug 2007 | B2 |
7279396 | Derderian et al. | Oct 2007 | B2 |
7282240 | Jackman et al. | Oct 2007 | B1 |
7291284 | Mirkin et al. | Nov 2007 | B2 |
7311943 | Jacobson et al. | Dec 2007 | B2 |
7326514 | Dai et al. | Feb 2008 | B2 |
7332370 | Chang et al. | Feb 2008 | B2 |
7332627 | Chandross et al. | Feb 2008 | B2 |
7338275 | Choi et al. | Mar 2008 | B2 |
7347953 | Black et al. | Mar 2008 | B2 |
7368314 | Ufert | May 2008 | B2 |
7407887 | Guo | Aug 2008 | B2 |
7408186 | Merkulov et al. | Aug 2008 | B2 |
7419772 | Watkins et al. | Sep 2008 | B2 |
7470954 | Lee et al. | Dec 2008 | B2 |
7514339 | Yang et al. | Apr 2009 | B2 |
7521090 | Cheng et al. | Apr 2009 | B1 |
7553760 | Yang et al. | Jun 2009 | B2 |
7569855 | Lai | Aug 2009 | B2 |
7585741 | Manning | Sep 2009 | B2 |
7592247 | Yang et al. | Sep 2009 | B2 |
7605081 | Yang et al. | Oct 2009 | B2 |
7632544 | Ho et al. | Dec 2009 | B2 |
7655383 | Mela et al. | Feb 2010 | B2 |
7658773 | Pinnow | Feb 2010 | B2 |
7700157 | Bronikowski et al. | Apr 2010 | B2 |
7723009 | Sandhu et al. | May 2010 | B2 |
7767099 | Li et al. | Aug 2010 | B2 |
7799416 | Chan et al. | Sep 2010 | B1 |
7888228 | Blanchard | Feb 2011 | B2 |
7959975 | Millward | Jun 2011 | B2 |
7964107 | Millward | Jun 2011 | B2 |
8039196 | Kim et al. | Oct 2011 | B2 |
8080615 | Millward | Dec 2011 | B2 |
8083953 | Millward et al. | Dec 2011 | B2 |
8083958 | Li | Dec 2011 | B2 |
8097175 | Millward et al. | Jan 2012 | B2 |
8101261 | Millward et al. | Jan 2012 | B2 |
8114300 | Millward | Feb 2012 | B2 |
8114301 | Millward et al. | Feb 2012 | B2 |
8114306 | Cheng et al. | Feb 2012 | B2 |
8206601 | Bosworth et al. | Jun 2012 | B2 |
8287749 | Hasegawa et al. | Oct 2012 | B2 |
8294139 | Marsh et al. | Oct 2012 | B2 |
8372295 | Millward | Feb 2013 | B2 |
8394483 | Millward | Mar 2013 | B2 |
8404124 | Millward et al. | Mar 2013 | B2 |
8409449 | Millward et al. | Apr 2013 | B2 |
8425982 | Regner | Apr 2013 | B2 |
8426313 | Millward et al. | Apr 2013 | B2 |
8445592 | Millward | May 2013 | B2 |
8455082 | Millward | Jun 2013 | B2 |
8512846 | Millward | Aug 2013 | B2 |
8513359 | Millward | Aug 2013 | B2 |
8518275 | Millward et al. | Aug 2013 | B2 |
8551808 | Marsh et al. | Oct 2013 | B2 |
8557128 | Millward | Oct 2013 | B2 |
8609221 | Millward et al. | Dec 2013 | B2 |
8633112 | Millward et al. | Jan 2014 | B2 |
8641914 | Regner | Feb 2014 | B2 |
8642157 | Millward et al. | Feb 2014 | B2 |
8669645 | Millward et al. | Mar 2014 | B2 |
8753738 | Millward et al. | Jun 2014 | B2 |
8784974 | Millward | Jul 2014 | B2 |
8785559 | Millward | Jul 2014 | B2 |
8801894 | Millward | Aug 2014 | B2 |
8808557 | Seino et al. | Aug 2014 | B1 |
8900963 | Sills et al. | Dec 2014 | B2 |
8956713 | Millward | Feb 2015 | B2 |
8993088 | Millward et al. | Mar 2015 | B2 |
8999492 | Millward et al. | Apr 2015 | B2 |
9087699 | Millward | Jul 2015 | B2 |
9142420 | Millward | Sep 2015 | B2 |
9177795 | Hendricks et al. | Nov 2015 | B2 |
20010024768 | Matsuo et al. | Sep 2001 | A1 |
20010049195 | Chooi et al. | Dec 2001 | A1 |
20020055239 | Tuominen et al. | May 2002 | A1 |
20020084429 | Craighead et al. | Jul 2002 | A1 |
20020158342 | Tuominen et al. | Oct 2002 | A1 |
20020158432 | Wain | Oct 2002 | A1 |
20020167117 | Chou | Nov 2002 | A1 |
20030010241 | Fujihira et al. | Jan 2003 | A1 |
20030034329 | Chou | Feb 2003 | A1 |
20030068639 | Haneder et al. | Apr 2003 | A1 |
20030077452 | Guire et al. | Apr 2003 | A1 |
20030080471 | Chou | May 2003 | A1 |
20030080472 | Chou | May 2003 | A1 |
20030091752 | Nealey et al. | May 2003 | A1 |
20030100822 | Lew et al. | May 2003 | A1 |
20030108879 | Klaerner et al. | Jun 2003 | A1 |
20030143375 | Noguchi et al. | Jul 2003 | A1 |
20030157248 | Watkins et al. | Aug 2003 | A1 |
20030178707 | Abbott | Sep 2003 | A1 |
20030180522 | DeSimone et al. | Sep 2003 | A1 |
20030180966 | Abbott et al. | Sep 2003 | A1 |
20030185741 | Matyjaszewski | Oct 2003 | A1 |
20030196748 | Hougham et al. | Oct 2003 | A1 |
20030218644 | Higuchi et al. | Nov 2003 | A1 |
20030222048 | Asakawa et al. | Dec 2003 | A1 |
20030235930 | Bao et al. | Dec 2003 | A1 |
20040023287 | Harnack et al. | Feb 2004 | A1 |
20040028875 | Van Rijn et al. | Feb 2004 | A1 |
20040058059 | Linford et al. | Mar 2004 | A1 |
20040076757 | Jacobson et al. | Apr 2004 | A1 |
20040084298 | Yao et al. | May 2004 | A1 |
20040109263 | Suda et al. | Jun 2004 | A1 |
20040124092 | Black | Jul 2004 | A1 |
20040125266 | Miyauchi et al. | Jul 2004 | A1 |
20040127001 | Colburn et al. | Jul 2004 | A1 |
20040142578 | Wiesner et al. | Jul 2004 | A1 |
20040159633 | Whitesides et al. | Aug 2004 | A1 |
20040163758 | Kagan et al. | Aug 2004 | A1 |
20040175628 | Nealey et al. | Sep 2004 | A1 |
20040192013 | Ryu et al. | Sep 2004 | A1 |
20040222415 | Chou et al. | Nov 2004 | A1 |
20040242688 | Chandross et al. | Dec 2004 | A1 |
20040254317 | Hu | Dec 2004 | A1 |
20040256615 | Sirringhaus et al. | Dec 2004 | A1 |
20040256662 | Black et al. | Dec 2004 | A1 |
20040265548 | Ho et al. | Dec 2004 | A1 |
20050008828 | Libera et al. | Jan 2005 | A1 |
20050062165 | Saenger et al. | Mar 2005 | A1 |
20050074706 | Bristol et al. | Apr 2005 | A1 |
20050079486 | Abbott et al. | Apr 2005 | A1 |
20050100830 | Xu et al. | May 2005 | A1 |
20050120902 | Adams et al. | Jun 2005 | A1 |
20050124135 | Ayazi et al. | Jun 2005 | A1 |
20050133697 | Potyrailo et al. | Jun 2005 | A1 |
20050147841 | Tavkhelidze et al. | Jul 2005 | A1 |
20050159293 | Wan et al. | Jul 2005 | A1 |
20050167651 | Merkulov et al. | Aug 2005 | A1 |
20050176256 | Kudelka | Aug 2005 | A1 |
20050208752 | Colburn et al. | Sep 2005 | A1 |
20050238889 | Iwamoto et al. | Oct 2005 | A1 |
20050238967 | Rogers et al. | Oct 2005 | A1 |
20050250053 | Marsh et al. | Nov 2005 | A1 |
20050271805 | Kambe et al. | Dec 2005 | A1 |
20050272341 | Colburn et al. | Dec 2005 | A1 |
20060013956 | Angelescu et al. | Jan 2006 | A1 |
20060014001 | Zhang et al. | Jan 2006 | A1 |
20060024590 | Sandhu | Feb 2006 | A1 |
20060030495 | Gregg | Feb 2006 | A1 |
20060035387 | Wagner et al. | Feb 2006 | A1 |
20060038182 | Rogers et al. | Feb 2006 | A1 |
20060046079 | Lee et al. | Mar 2006 | A1 |
20060046480 | Guo | Mar 2006 | A1 |
20060046484 | Abatchev et al. | Mar 2006 | A1 |
20060060863 | Lu et al. | Mar 2006 | A1 |
20060062867 | Choi et al. | Mar 2006 | A1 |
20060078681 | Hieda et al. | Apr 2006 | A1 |
20060097134 | Rhodes | May 2006 | A1 |
20060105562 | Yi | May 2006 | A1 |
20060124467 | Ho et al. | Jun 2006 | A1 |
20060128165 | Theiss et al. | Jun 2006 | A1 |
20060134556 | Nealey et al. | Jun 2006 | A1 |
20060137554 | Kron et al. | Jun 2006 | A1 |
20060141222 | Fischer et al. | Jun 2006 | A1 |
20060141245 | Stellacci et al. | Jun 2006 | A1 |
20060154466 | Lee et al. | Jul 2006 | A1 |
20060163646 | Black et al. | Jul 2006 | A1 |
20060192283 | Benson | Aug 2006 | A1 |
20060205875 | Cha et al. | Sep 2006 | A1 |
20060211871 | Dai | Sep 2006 | A1 |
20060217285 | Destarac | Sep 2006 | A1 |
20060228635 | Suleski | Oct 2006 | A1 |
20060231525 | Asakawa et al. | Oct 2006 | A1 |
20060249784 | Black et al. | Nov 2006 | A1 |
20060249796 | Tavkhelidze et al. | Nov 2006 | A1 |
20060254440 | Choi et al. | Nov 2006 | A1 |
20060255505 | Sandhu et al. | Nov 2006 | A1 |
20060257633 | Inoue et al. | Nov 2006 | A1 |
20060258159 | Colburn et al. | Nov 2006 | A1 |
20060278158 | Tolbert et al. | Dec 2006 | A1 |
20060281266 | Wells | Dec 2006 | A1 |
20060286297 | Bronikowski et al. | Dec 2006 | A1 |
20060286305 | Thies et al. | Dec 2006 | A1 |
20060286490 | Sandhu et al. | Dec 2006 | A1 |
20060292777 | Dunbar | Dec 2006 | A1 |
20070020749 | Nealey et al. | Jan 2007 | A1 |
20070023247 | Ulicny et al. | Feb 2007 | A1 |
20070023805 | Wells et al. | Feb 2007 | A1 |
20070045562 | Parekh | Mar 2007 | A1 |
20070045642 | Li | Mar 2007 | A1 |
20070071881 | Chua et al. | Mar 2007 | A1 |
20070072403 | Sakata | Mar 2007 | A1 |
20070122749 | Fu et al. | May 2007 | A1 |
20070122932 | Kodas et al. | May 2007 | A1 |
20070138131 | Burdinski | Jun 2007 | A1 |
20070161237 | Lieber et al. | Jul 2007 | A1 |
20070175859 | Black et al. | Aug 2007 | A1 |
20070181870 | Libertino et al. | Aug 2007 | A1 |
20070183035 | Asakawa et al. | Aug 2007 | A1 |
20070194403 | Cannon et al. | Aug 2007 | A1 |
20070200477 | Tuominen et al. | Aug 2007 | A1 |
20070208159 | McCloskey et al. | Sep 2007 | A1 |
20070218202 | Ajayan et al. | Sep 2007 | A1 |
20070222995 | Lu | Sep 2007 | A1 |
20070224819 | Sandhu | Sep 2007 | A1 |
20070224823 | Sandhu | Sep 2007 | A1 |
20070227383 | Decre et al. | Oct 2007 | A1 |
20070249117 | Kang et al. | Oct 2007 | A1 |
20070272951 | Lieber et al. | Nov 2007 | A1 |
20070281220 | Sandhu et al. | Dec 2007 | A1 |
20070289943 | Lu et al. | Dec 2007 | A1 |
20070293041 | Yang et al. | Dec 2007 | A1 |
20080032238 | Lu et al. | Feb 2008 | A1 |
20080038467 | Jagannathan et al. | Feb 2008 | A1 |
20080038923 | Edelstein et al. | Feb 2008 | A1 |
20080041818 | Kihara et al. | Feb 2008 | A1 |
20080047930 | Blanchet et al. | Feb 2008 | A1 |
20080064217 | Horii | Mar 2008 | A1 |
20080073743 | Alizadeh et al. | Mar 2008 | A1 |
20080078982 | Min et al. | Apr 2008 | A1 |
20080078999 | Lai | Apr 2008 | A1 |
20080083991 | Yang et al. | Apr 2008 | A1 |
20080085601 | Park et al. | Apr 2008 | A1 |
20080093743 | Yang et al. | Apr 2008 | A1 |
20080102252 | Black et al. | May 2008 | A1 |
20080103256 | Kim et al. | May 2008 | A1 |
20080113169 | Cha et al. | May 2008 | A1 |
20080164558 | Yang et al. | Jul 2008 | A1 |
20080174726 | Kim | Jul 2008 | A1 |
20080176767 | Millward | Jul 2008 | A1 |
20080191200 | Frisbie et al. | Aug 2008 | A1 |
20080193658 | Millward | Aug 2008 | A1 |
20080217292 | Millward et al. | Sep 2008 | A1 |
20080233297 | De Jong et al. | Sep 2008 | A1 |
20080233323 | Cheng et al. | Sep 2008 | A1 |
20080241218 | McMorrow et al. | Oct 2008 | A1 |
20080257187 | Millward | Oct 2008 | A1 |
20080260941 | Jin | Oct 2008 | A1 |
20080274413 | Millward | Nov 2008 | A1 |
20080286659 | Millward | Nov 2008 | A1 |
20080311347 | Millward et al. | Dec 2008 | A1 |
20080315270 | Marsh et al. | Dec 2008 | A1 |
20080318005 | Millward | Dec 2008 | A1 |
20090062470 | Millward et al. | Mar 2009 | A1 |
20090087664 | Nealey et al. | Apr 2009 | A1 |
20090148795 | Li | Jun 2009 | A1 |
20090155579 | Greco et al. | Jun 2009 | A1 |
20090196488 | Nealey et al. | Aug 2009 | A1 |
20090200646 | Millward et al. | Aug 2009 | A1 |
20090206489 | Li et al. | Aug 2009 | A1 |
20090212016 | Cheng et al. | Aug 2009 | A1 |
20090218567 | Mathew et al. | Sep 2009 | A1 |
20090236309 | Millward et al. | Sep 2009 | A1 |
20090240001 | Regner | Sep 2009 | A1 |
20090263628 | Millward | Oct 2009 | A1 |
20090267058 | Namdas et al. | Oct 2009 | A1 |
20090274887 | Millward et al. | Nov 2009 | A1 |
20090317540 | Sandhu et al. | Dec 2009 | A1 |
20100092873 | Sills et al. | Apr 2010 | A1 |
20100102415 | Millward et al. | Apr 2010 | A1 |
20100124826 | Millward et al. | May 2010 | A1 |
20100137496 | Millward et al. | Jun 2010 | A1 |
20100163180 | Millward | Jul 2010 | A1 |
20100204402 | Millward et al. | Aug 2010 | A1 |
20100279062 | Millward et al. | Nov 2010 | A1 |
20100316849 | Millward et al. | Dec 2010 | A1 |
20100323096 | Sills et al. | Dec 2010 | A1 |
20110232515 | Millward | Sep 2011 | A1 |
20120028471 | Oyama et al. | Feb 2012 | A1 |
20120076978 | Millward et al. | Mar 2012 | A1 |
20120122292 | Sandhu et al. | May 2012 | A1 |
20120133017 | Millward et al. | May 2012 | A1 |
20120135146 | Cheng et al. | May 2012 | A1 |
20120135159 | Xiao et al. | May 2012 | A1 |
20120138570 | Millward et al. | Jun 2012 | A1 |
20120141741 | Millward | Jun 2012 | A1 |
20120164389 | Yang et al. | Jun 2012 | A1 |
20120202017 | Nealey et al. | Aug 2012 | A1 |
20120211871 | Russell et al. | Aug 2012 | A1 |
20120223051 | Millward | Sep 2012 | A1 |
20120223052 | Regner | Sep 2012 | A1 |
20120223053 | Millward et al. | Sep 2012 | A1 |
20120225243 | Millward | Sep 2012 | A1 |
20120263915 | Millward | Oct 2012 | A1 |
20130004707 | Millward | Jan 2013 | A1 |
20130011561 | Marsh et al. | Jan 2013 | A1 |
20130105755 | Sills et al. | May 2013 | A1 |
20130189492 | Millward et al. | Jul 2013 | A1 |
20130285214 | Millward et al. | Oct 2013 | A1 |
20130295323 | Millward | Nov 2013 | A1 |
20130330668 | Wu et al. | Dec 2013 | A1 |
20140060736 | Millward et al. | Mar 2014 | A1 |
20140097520 | Millward | Apr 2014 | A1 |
20140127626 | Senzaki et al. | May 2014 | A1 |
20140272723 | Somervell et al. | Sep 2014 | A1 |
20150021293 | Morris et al. | Jan 2015 | A1 |
20150091137 | Hendricks et al. | Apr 2015 | A1 |
Number | Date | Country |
---|---|---|
1562730 | Jan 2005 | CN |
1799131 | Jul 2006 | CN |
101013662 | Aug 2007 | CN |
184543 | Apr 2000 | EP |
1416303 | May 2004 | EP |
1906237 | Apr 2008 | EP |
1593164 | Jun 2010 | EP |
11080414 | Mar 1999 | JP |
2003155365 | May 2003 | JP |
2004335962 | Nov 2004 | JP |
2005008882 | Jan 2005 | JP |
2005029779 | Feb 2005 | JP |
2006036923 | Feb 2006 | JP |
2006055982 | Mar 2006 | JP |
2006110434 | Apr 2006 | JP |
2007194175 | Aug 2007 | JP |
2008036491 | Feb 2008 | JP |
2008043873 | Feb 2008 | JP |
1020060128378 | Dec 2006 | KR |
1020070029762 | Mar 2007 | KR |
100771886 | Nov 2007 | KR |
200400990 | Mar 1992 | TW |
200633925 | Oct 1994 | TW |
200740602 | Jan 1996 | TW |
200802421 | Feb 1996 | TW |
584670 | Apr 2004 | TW |
200419017 | Oct 2004 | TW |
200511364 | Mar 2005 | TW |
1256110 | Jun 2006 | TW |
1253456 | Nov 2007 | TW |
9007575 | Jul 1990 | WO |
9706013 | Feb 1997 | WO |
9839645 | Sep 1998 | WO |
9947570 | Sep 1999 | WO |
0002090 | Jan 2000 | WO |
0031183 | Jun 2000 | WO |
0218080 | Mar 2002 | WO |
02081372 | Oct 2002 | WO |
03045840 | Jun 2003 | WO |
2005122285 | Dec 2005 | WO |
2006003592 | Jan 2006 | WO |
2006003594 | Jan 2006 | WO |
2006078952 | Jul 2006 | WO |
2006076016 | Oct 2006 | WO |
2006112887 | Oct 2006 | WO |
2007001294 | Jan 2007 | WO |
2007013889 | Feb 2007 | WO |
2007024241 | Mar 2007 | WO |
2007024323 | Mar 2007 | WO |
2007019439 | May 2007 | WO |
2007055041 | May 2007 | WO |
2008055137 | May 2008 | WO |
2008091741 | Jul 2008 | WO |
2008096335 | Aug 2008 | WO |
2008097736 | Aug 2008 | WO |
2008118635 | Oct 2008 | WO |
2008124219 | Oct 2008 | WO |
2008130847 | Oct 2008 | WO |
2008145268 | Dec 2008 | WO |
2008156977 | Dec 2008 | WO |
2009099924 | Aug 2009 | WO |
2009102551 | Aug 2009 | WO |
2009117238 | Sep 2009 | WO |
2009117243 | Sep 2009 | WO |
2009134635 | Nov 2009 | WO |
Entry |
---|
Potemkin et al., Effect of the Molecular Weight of AB Diblock Copolymers on the Lamellar Orientation in Thin Films: Theory and Experiment, Macromol. Rapid Commun., vol. 28, (2007), pp. 579-584. |
Reed et al., Molecular Random Access Memory Cell, Appl. Phys. Lett., vol. 78, No. 23, (Jun. 4, 2001), pp. 3735-3737. |
Resnick et al., Initial Study of the Fabrication of Step and Flash Imprint Lithography Templates for the Printing of Contact Holes, J. Micro/Nanolithography, MEMS, and MOEMS, vol. 3, No. 2, (Apr. 2004), pp. 316-321. |
Rogers, J. A., Slice and Dice, Peel and Stick: Emerging Methods for Nanostructure Fabrication, ACS Nano, vol. 1, No. 3, (2007), pp. 151-153. |
Rozkiewicz et al., “Click” Chemistry by Microcontact Printing, Angew. Chem. Int. Ed., vol. 45, No. 32, (Jul. 12, 2006), pp. 5292-5296. |
Ruiz et al., Density Multiplication and Improved Lithography by Directed Block Copolymer Assembly, Science, vol. 321, (Aug. 15, 2008), pp. 936-939. |
Ruiz et al., Induced Orientational Order in Symmetric Diblock Copolymer Thin-Films, Advanced Materials, vol. 19, No. 4, (2007), pp. 587-591. |
Ryu et a., Surface Modification with Cross-Linked Random Copolymers: Minimum Effective Thickness, Macromolecules, vol. 40, No. 12, (2007), pp. 4296-4300. |
Saraf et al., Spontaneous Planarization of Nanoscale Phase Separated Thin Film, Applied Physics Letters, vol. 80, No. 23, (Jun. 10, 2002), pp. 4425-4427. |
Sato et al., Novel Antireflective Layer Using Polysilane for Deep Ultraviolet Lithography, J. Vac. Sci. Technol. B, vol. 17, No. 6, (Nov./Dec. 1999), pp. 3398-3401. |
Sawhney et al., Bioerodible Hydrogels Based on Photopolymerized Poly(ethylene glycol)-co-poly(a-hydroxy acid) Diacrylate Macromers, Macromolecules 1993, vol. 26, (1993), pp. 581-587, abstract only. |
Segalman, R. A., Patterning with Block Copolymer Thin Films, Materials Science and Engineering R 48, (2005), pp. 191-226. |
Shahrjerdi et al., Fabrication of Ni Nanocrystal Flash Memories Using a Polymeric Self-Assembly Approach, IEEE Electron Device Letters, vol. 28, No. 9, (Sep. 2007), pp. 793-796. |
Sharma et al., Ultrathin Poly(ethylene glycol) Films for Silicon-based Microdevices, Applied Surface Science, vol. 206, (2003), pp. 218-229. |
Sigma-Aldrich, 312-315 Tutorial regarding Materials for Lithography/Nanopatterning, http://www.sigmaaldrich.com/Area—of—Interest/Chemistry/Materials—Science/Micro—and—Nanoelectronic website, (retrieved Aug. 27, 2007), 8 pages. |
Sivaniah et al., Observation of Perpendicular Orientation in Symmetric Diblock Copolymer Thin Films on Rough Substrates, Macromolecules 2003, vol. 36, (2003), pp. 5894-5896. |
Sivaniah et al., Symmetric Diblock Copolymer Thin Films on Rough Substrates, Kinetics and Structure Formation in Pure Block Copolymer Thin Films, Macromolecules 2005, vol. 38, (2005), pp. 1837-1849. |
Sohn et al., Fabrication of the Multilayered Nanostructure of Alternating Polymers and Gold Nanoparticles with Thin Films of Self-Assembling Diblock Copolymers, Chem. Mater., vol. 13, (2001), pp. 1752-1757. |
Solak, H. H., Nanolithography with Coherent Extreme Ultraviolet Light, Journal of Physics D: Applied Physics, vol. 39, (2006), pp. R171-R188. |
Srinvivasan et al., Scanning Electron Microscopy of Nanoscale Chemical Patterns, ACS Nano, vol. 1, No. 3, (2007), pp. 191-201. |
Stoykovich et al., Directed Assembly of Block Copolymer Blends into Nonregular Device-Oriented Structures, Science, vol. 308, (Jun. 3, 2005), pp. 1442-1446. |
Stoykovich, M. P., et al., Directed Self-Assembly of Block Copolymers for Nanolithography: Fabrication of Isolated Features and Essential Integrated Circuit Geometries, ACS Nano, vol. 1, No. 3, (2007), pp. 168-175. |
Sundrani et al., Guiding Polymers to Perfection: Macroscopic Alignment of Nanoscale Domains, Nano Lett., vol. 4, No. 2, (2004), pp. 273-276. |
Sundrani et al., Hierarchical Assembly and Compliance of Aligned Nanoscale Polymer Cylinders in Confinement, Langmuir 2004, vol. 20, No. 12, (2004), pp. 5091-5099. |
Tadd et al, Spatial Distribution of Cobalt Nanoclusters in Block Copolymers, Langmuir, vol. 18, (2002), pp. 2378-2384. |
Tang et al., Evolution of Block Copolymer Lithography to Highly Ordered Square Arrays, Science, vol. 322, No. 5900, (Sep. 25, 2008), pp. 429-432. |
Trimbach et al., Block Copolymer Thermoplastic Elastomers for Microcontact Printing, Langmuir, vol. 19, (2003), pp. 10957-10961. |
Truskett et al., Trends in Imprint Lithography for Biological Applications, TRENDS in Biotechnology, vol. 24, No. 1, (Jul. 2006), pp. 312-315. |
Tseng et al., Enhanced Block Copolymer Lithography Using Sequential Infiltration Synthesis, J. of Physical Chemistry, (Jul. 11, 2011), 16 pgs. |
Van Poll et al., Self-Assembly Approach to Chemical Micropatterning of Poly(dimethylsiloxane), Angew. Chem. Int. Ed. 2007, vol. 46, (2007), pp. 6634-6637. |
Wang et al., One Step Fabrication and characterization of Platinum Nanopore Electrode Ensembles formed via Amphiphilic Block Copolymer Self-assembly, Electrochimica Acta 52, (2006), pp. 704-709. |
Wathier et al., Dendritic Macromers as in Situ Polymerizing Biomaterials for Securing Cataract Incisions, J. Am. Chem. Soc., vol. 126, No. 40, (2004), pp. 12744-12745, abstract only. |
Winesett et al., Tuning Substrate Surface Energies for Blends of Polystyrene and Poly(methyl methacrylate), Langmuir 2003, vol. 19, (2003), pp. 8526-8535. |
WIPF, Handbook of Reagents for Organic Synthesis, John Wiley & Sons Ltd., (2005), p. 320. |
Wu et al., Self-Assembled Two-Dimensional Block Copolymers on Pre-patterned Templates with Laser Interference Lithography, IEEE, (2007), pp. 153-154. |
Xia et al., An Approach to Lithographically Defined Self-Assembled Nanoparticle Films, Advanced Materials, vol. 18, (2006), pp. 930-933. |
Xia et al., Soft Lithography, Annu. Rev. Mater. Sci., vol. 28, (1998), pp. 153-184. |
Xiao et al., Graphoepitaxy of Cylinder-forming Block Copolymers for Use as Templates to Pattern Magnetic Metal Dot Arrays, Nanotechnology 16, IPO Publishing Ltd, UK (2005), pp. S324-S329. |
Xu et al., Electric Field Alignment of Symmetric Diblock Copolymer Thin Films, Macromolecules, (2003), 5 pgs. |
Xu et al., Interfacial Interaction Dependence of Microdomain Orientation in Diblock Copolymer Thin Films, Macromolecules, vol. 38, (2005), pp. 2802-2805. |
Xu et al., Surface-Initiated Atom Transfer Radical Polymerization from Halogen-Terminated Si(111) (Si-X, X = Cl, Br) Surfaces for the Preparation of Well-Defined Polymer-Si Hybrids, Langmuir, vol. 21, No. 8, (2005), pp. 3221-3225. |
Xu et al., The Influence of Molecular Weight on Nanoporous Polymer Films, Polymer 42, Elsevier Science Ltd., (2001), pp. 9091-9095. |
Yamaguchi et al., Resist-Pattern Guided Self-Assembly of Symmetric Diblock Copolymer, Journal of Photopolymer Science and Technology, vol. 19, No. 3, (2006), pp. 385-388. |
Yamaguchi et al., Two-dimensional Arrangement of Vertically Oriented Cylindrical Domains of Diblock Copolymers Using Graphoepitaxy with Artificial Guiding Pattern Layout, Microprocesses and Nanotechnology, 2007, Conference date Nov. 5-8, 2007, pp. 434-435. |
Yan et al., Preparation and Phase Segregation of Block Copolymer Nanotube Multiblocks, J. Am. Chem. Soc., vol. 126, No. 32, (2004), pp. 10059-10066. |
Yang et al., Covalently Attached Graft Polymer Monolayer on Organic Polymeric Substrate via Confined Surface Inhibition Reaction, J. Polymer Sci.—A—Polymer Chemistry Ed., vol. 45, Issue 5, (2007), pp. 745-755. |
Yang et al., Guided Self-Assembly of Symmetric Diblock Copolymer Films on Chemically Nanopattemed Substrates, Macromolecules 2000, vol. 33, No. 26, (2000), pp. 9575-9582. |
Yang et al., Nanoscopic Templates Using Self-assembled Cylindrical Diblock Copolymers for Patterned Media, J. Vac. Sci. Technol. B 22(6), (Nov./Dec. 2004), pp. 3331-3334. |
Yu et al., Contact Printing Beyond Surface Roughness: Liquid Supramolecular Nanostamping, Advanced Materials, vol. 19, (2007), pp. 4338-4342. |
Yurt et al., Scission of Diblock Copolymers into Their Constituent Blocks, Macromolecules 2006, vol. 39, No. 5, (2006), pp. 1670-1672. |
Krishnamoorthy et al., Nanopattemed Self-Assembled Monolayers by Using Diblock Copolymer Micelles as Nanometer-Scale Adsorption and Etch Masks, Advanced Materials, (2008), pp. 1-4. |
Krishnamoorthy et al., Nanoscale Patterning with Block Copolymers, Materials Today, vol. 9, No. 9, (Sep. 2006), pp. 40-47. |
Kuhnline et al., Detecting Thiols in a Microchip Device Using Micromolded Carbon Ink Electrodes Modified with Cobalt Phthalocyanine, Analyst, vol. 131, (2006), pp. 202-207. |
La et al., Directed Assembly of Cylinder-Forming Block Copolymers into Patterned Structures to Fabricate Arrays of Spherical Domains and Nanoparticles, Chem. Mater., vol. 19, No. 18, (2007), pp. 4538-4544. |
La et al., Pixelated Chemically Amplified Resists: Investigation of Material Structure on the Spatial Distribution of Photoacids and Line Edge Roughness, J. Vac. Sci. Technol. B, vol. 25, No. 6, (Nov./Dec. 2007), pp. 2508-2513. |
Laracuente et al., Step Structure and Surface Morphology of Hydrogen-Terminated Silicon: (001) to (114), Surface Science, vol. 545, (2003), pp. 70-84. |
Lentz et al., Whole Wafer Imprint Patterning Using Step and Flash Imprint Lithography: A Manufacturing Solution for Sub 100 nm Patterning, SPIE Emerging Lithographic Technologies, vol. 6517, (Mar. 16, 2007), 10 pages. |
Li et al., A Method for Patterning Multiple Types of Cells by Using Electrochemical Desorption of Self-Assembled Monolayers within Microfluidic Channels, Angew. Chem. Int. Ed., vol. 46, (2007), pp. 1094-1096. |
Li et al., Block Copolymer Patterns and Templates, Materials Today, vol. 9, No. 9, (Sep. 2006), pp. 30-39. |
Li et al., Creation of Sub-20-nm Contact Using Diblock Copolymer on a 300 mm Wafer for Complementary Metal Oxide Semiconductor Applications, J. Vac. Sci. Technol. B, vol. 25, No. 6, (Nov./Dec. 2007), pp. 1982-1984. |
Li et al., Morphology Change of Asymmetric Diblock Copolymer Micellar Films During Solvent Annealing, Polymer, vol. 48, (2007), pp. 2434-2443. |
Li et al., “Ordered Block-Copolymer Assembly Using Nanoimprint Lithography,” Nano Lett. (2004), vol. 4, No. 9, pp. 1633-1636. |
Lin et al., A Rapid Route to Arrays of Nanostructures in Thin Films, Adv. Mater., vol. 14, No. 19, (Oct. 2, 2002), pp. 1373-1376. |
Lin-Gibson et al., Structure—Property Relationships of Photopolymerizable Poly(ethylene glycol) Dimethacrylate Hydrogels, Macromolecules, vol. 38, (2005), pp. 2897-2902. |
Liu et al., Pattern Transfer Using Poly(styrene-block-methyl methacrylate) Copolymer Films and Reactive Ion Aching, J. Vac. Sci. Technol. B, vol. 25, No. 6, (Nov./Dec. 2007), pp. 1963-1968. |
Loo et al., Additive, Nanoscale Patterning of Metal Films with a Stamp and a Surface Chemistry Mediated Transfer Process: Applications in Plastic Electronics, Applied Physics Letters, vol. 81, No. 3, (Jul. 15, 2002), pp. 562-564. |
Lopes et al., Hierarchical Self-Assembly of Metal Nanostructures on Diblock Copolymer Scaffolds, Nature, vol. 414, (Dec. 13, 2001), pp. 735-738. |
Lutolf et al., Cell-Responsive Synthetic Hydrogels, Adv. Mater., vol. 15, No. 11, (Jun. 2003), pp. 888-892. |
Lutolf et al., Synthetic Biomaterials as Instructive Extracellular Microenvironments for Morphogenesis in Tissue Engineenng, Nature Biotechnology, vol. 23, (2005), pp. 47-55, (Abstract only). |
Lutz, 1,3-Dipolar Cycloadditions of Azides and Alkynes: A Universal Ligation Tool in Polymer and Materials Science, Angew. Chem. Int. Ed., vol. 46, (2007), pp. 1018-1025. |
Malenfant et al., Self-Assembly of an Organic-Inorganic Block Copolymer for Nano-Ordered Ceramics, Nature Nanotechnology, vol. 2, (Jan. 2007), pp. 43-46. |
Malkoch et al., Synthesis of Well-Defined Hydrogel Networks Using Click Chemistry, Chem. Commun., (2006), pp. 2774-2776. |
Mansky et al., Controlling Polymer-Surface Interactions with Random Copolymer Brushes, Science, vol. 275, (Mar. 7, 1997), pp. 1458-1460. |
Martens et al., Characterization of Hydrogels Formed from Acrylate Modified Poly(vinyl alcohol) Macromers, Polymer, vol. 41, No. 21, (Oct. 2000), pp. 7715-7722, (Abstract only). |
Matsuda et al., Photoinduced Prevention of Tissue Adhesion, ASAIO J, vol. 38, No. 3, (Jul.-Sep. 1992), pp. M154-M157, (Abstract only). |
Maye et al., Chemical Analysis Using Force Microscopy, Journal of Chemical Education, vol. 79, No. 2, (Feb. 2002), pp. 207-210. |
Melde et al., Silica Nanostructures Templated by Oriented Block Copolymer Thin Films Using Pore-Filling and Selective-Mineralization Routes, Chem. Mater., vol. 17, No. 18, (Aug. 13, 2005), pp. 4743-4749. |
Metters et al., Network Formation and Degradation Behavior of Hydrogels Formed by Michael-Type Addition Reactions, Biomacromolecules, vol. 6, (2005), pp. 290-301. |
Meyer et al., Controlled Dewetting Processes on Microstructured Surfaces—a New Procedure for Thin Film Microstructuring, Macromollecular Mater. Eng., vol. 276/277, (2000), pp. 44-50. |
Mezzenga et al., On the Role of Block Copolymers in Self-Assembly of Dense Colloidal Polymeric Systems, Langmuir, vol. 19, No. 20, (2003), pp. 8144-8147. |
Mindel et al., A Study of Bredig Platinum Sols, The Chemical Laboratories of New York University, vol. 65, (Jun. 10, 1943), p. 2112. |
Naito et al., 2.5-Inch Disk Patterned Media Prepared by an Artificially Assisted Self-Assembling Method, IEEE Transactions on Magnetics, vol. 38, No. 5, (Sep. 2002), pp. 1949-1951. |
Nealey et al., Self-Assembling Resists for Nanolithography, 2005 Electron Devices Meeting, IEDM Technical Digest, (2005), 2 pages. |
Nguyen et al., Photopolymerizable Hydrogels for Tissue Engineering Applications, Biomaterials, vol. 23, (2002), pp. 4307-4314. |
Nishikubo, T., Chemical Modification of Polymers via a Phase-Transfer Catalyst or Organic Strong Base, American Chemical Society Symposium Series, (1997), pp. 214-230. |
Niu et al., Selective Assembly of Nanoparticles on Block Copolymer by Surface Modification, Nanotechnology, vol. 18, (2007), pp. 1-4. |
Niu et al., Stability of Order in Solvent-Annealed Block Copolymer Thin Films, Macromolecules, vol. 36, No. 7, (2003), pp. 2428-2440, (Abstract and Figures only). |
Olayo-Valles et al. Large Area Nanolithographic Templates by Selective Etching of Chemically Stained Block Copolymer Thin Films, J. Mater. Chem., vol. 14, (2004), pp. 2729-2731. |
Parejo et al., Highly Efficient UV-Absorbing Thin-Film Coatings for Protection of Organic Materials Against Photodegradation, J. Mater. Chem., vol. 16, (2006), pp. 2165-2169. |
Park et al., Block Copolymer Lithography: Periodic Arrays of˜10 Holes in 1 Square Centimeter, Science, vol. 276, No. 5317, (May 30, 1997), pp. 1401-1404. |
Park et al., Block Copolymer Multiple Patterning Integrated with Conventional ArF Lithography, Soft Matter, vol. 6, (2010), pp. 120-125. |
Park et al., Controlled Ordering of Block Copolymer Thin Films by the Addition of Hydrophilic Nanoparticles, Macromolecules 2007, vol. 40, No. 22, (2007), pp. 8119-8124. |
Park et al., Directed Assembly of Lamellae-Forming Block Copolymers by Using Chemically and Topographically Patterned Substrates, Advanced Materials, vol. 19, No. 4, (Feb. 2007), pp. 607-611. |
Park et al., Enabling Nanotechnology with Self Assembled Block Copolymer Patterns, Polymer, vol. 44, No. 22, (2003), pp. 6725-6760. |
Park et al., Fabrication of Highly Ordered Silicon Oxide Dots and Stripes from Block Copolymer Thin Films, Advanced Materials, vol. 20, (2008), pp. 681-685. |
Park et al., High-Aspect-Ratio Cylindrical Nanopore Arrays and Their Use for Templating Titania Nanoposts, Advanced Materials, vol. 20, (2008), pp. 738-742. |
Park et al., The Fabrication of Thin Films with Nanopores and Nanogrooves from Block Copolymer Thin Films on the Neutral Surface of Self-Assembled Monolayers, Nanotechnology, vol. 18, (2007), pp. 1-7. |
Peng et al., Development of Nanodomain and Fractal Morphologies in Solvent Annealed Block Copolymer Thin Films, Macromol. Rapid Commun., vol. 28, (2007), pp. 1422-1428. |
Peters et al., Combining Advanced Lithographic Techniques and Self-Assembly of Thin Films of Diblock Copolymers to Produce Templates for Nanofabrication, J. Vac. Sci. Technol. B, vol. 18, No. 6, (Nov./Dec. 2000), pp. 3530-3532. |
Peters et al., Morphology of Thin Films of Diblock Copolymers on Surfaces Micropattemed with Regions of Different Interfacial Energy, Macromolecules, vol. 35, No. 5, (2002), pp. 1822-1834. |
Zaumseil et al., Three-Dimensional and Multilayer Nanostructures Formed by Nanotransfer Printing, Nano Letters, vol. 3, No. 9,(2003), pp. 1223-1227. |
Zehner et al., Selective Decoration of a Phase-Separated Diblock Copolymer with Thiol-Passivated Gold Nanocrystals, Langmuir, vol. 14, No. 2, (Jan. 20, 1998), pp. 241-244. |
Zhang et al., Highly Ordered Nanoporous Thin Films from Cleavable Polystyrene-block-poly(ethylene oxide),Adv. Mater., vol. 19, (2007), pp. 1571-1576. |
Zhang et al., Phase Change Nanodot Arrays Fabricated Using a Self-Assembly Diblock Copolymer Approach, Applied Physics Letter, vol. 91, (2007), pp. 013104-013104-3. |
Zhang et al., Self-Assembled Monolayers of Terminal Alkynes on Gold, J. Am. Chem. Soc., vol. 129, No. 16, (2007), pp. 4876-4877. |
Zhao et al., Colloidal Subwavelength Nanostructures for Antireflection Optical Coatings, Optics Letters, vol. 30, No. 14, (Jul. 15, 2005), pp. 1885-1887. |
Zhou et al., Nanoscale Metal/Self-Assembled Monolayer/Metal Heterostructures, Appl. Phys. Lett., vol. 71, No. 5, (Aug. 4, 1997), pp. 611-613. |
Zhu et al., Grafting of High-Density Poly(Ethylene Glycol) Monolayers on Si(111), Langmuir, vol. 17, (2001), pp. 7798-7803. |
Zhu et al., Molecular Assemblies on Silicon Surfaces via Si-O Linkages, Langmuir, vol. 16, (2000), pp. 6766-6772. |
Ali et al., Properties of Self-Assembled ZnO Nanostructures, Solid-State Electronics, vol. 46, (2002), pp. 1639-1642. |
Arshady et al., The Introduction of Chloromethyl Groups into Styrene-Based Polymers, 1, Makromol. Chem., vol. 177, (1976), pp. 2911-2918. |
Asakawa et al., Fabrication of Subwavelength Structure for Improvement in Light-Extraction Efficiency of Light-Emitting Devices Using a Self-Assembled Pattern of Block Copolymer, Applied Optics, vol. 44, No. 34, (Dec. 1, 2005), pp. 7475-7482. |
Bae et al., Surface Modification Using Photo-Crosslinkable Random Copolymers, Abstract submitted for the Mar. 2006 meeting of the American Physical Society, (submitted Nov. 30, 2005) (accessed online Apr. 5, 2010) <http://absimage.aps.org/image/MWS—MAR06-2005-003641.pdf>. |
Balsara et al., Synthesis and Application of Nanostructured Materials, CPIMA, IRG Technical Programs, Leland Stanford Junior Univ., (2006), <http://www.stanford.edu/group/cpima/irg/irg—1.htm>, 9 pages. |
Bang et al., The Effect of Humidity on the Ordering of Tri-block Copolymer Thin Films, Abstract submitted for the Mar. 2007 meeting of the American Physical Society, (submitted Nov. 20, 2006), 1 page. |
Bass et al., Microcontact Printing with Octadecanethiol, Applied Surface Science, vol. 226, No. 4, (Apr. 2004), pp. 335-340. |
Bearinger et al., Chemisorbed Poly(propylene sulphide)-Based Copolymers Resist Biomolecular Interactions, Nature Materials, vol. 2, (2003), pp. 259-264. |
Berry et al., Effects of Zone Annealing on Thin Films of Block Copolymers, National Institute of Standards and Technology, Polymers Division, Maryland, USA, (2007), 2 pages. |
Berry et al., Orientational Order in Block Copolymer Films Zone Annealed Below the Order—Disorder Transition Temperature, Nano Letters, vol. 7, No. 9, (Aug. 2007), pp. 2789-2794. |
Black et al., High-Capacity, Self-Assembled Metal-Oxide-Semiconductor Decoupling Capacitors, IEEE Electron Device Letters, vol. 25, No. 9, (Sep. 2004), pp. 622-624. |
Black, Integration of Self Assembly for Semiconductor Microelectronics, IEEE 2005 Custom Integrated Circuits Conference, (2005), pp. 87-91. |
Black et al., Integration of Self-Assembled Diblock Copolymers for Semiconductor Capacitor Fabrication, Applied Physics Letters, vol. 79, No. 3, (2001), pp. 409-411. |
Black et al., Nanometer-Scale Pattern Registration and Alignment by Directed Diblock Copolymer Self-Assembly, IEEE Transactions on Nanotechnology, vol. 3, No. 3, (Sep. 2004), pp. 412-415. |
Black et al., Polymer Self Assembly in Semiconductor Microelectronics, IBM J. Res. & Dev., vol. 51, No. 5, (Sep. 2007), pp. 605-633. |
Black et al., Self Assembly in Semiconductor Microelectronics: Self-Aligned Sub-Lithographic Patterning Using Diblock Copolymer Thin Films, Proc. of SPIE, vol. 6153, (2006), pp. 615302-1-615302-11. |
Black, C. T., Polymer Self-Assembly as a Novel Extension to Optical Lithography, American Chemical Society, ACSNano, vol. 1, No. 3, (2007), pp. 147-150. |
Black, C. T., Self-Aligned Self-Assembly of Multi-Nanowire Silicon Field Effect Transistors, Appl. Phys. Lett., vol. 87, (2005), pp. 163116-1-163116-3. |
Botelho Do Rego et al., Diblock Copolymer Ultrathin Films Studied by High Resolution Electron Energy Loss Spectroscopy, Surface Science, 482-485, (2001), pp. 1228-1234. |
Brydson et al. (chapter authors), Generic Methodologies for Nanotechnology: Classification and Fabrication, Nanoscale Science and Technology, John Wiley & Sons, Ltd., (Dec. 20, 2005), pp. 1-55. |
Bulpitt et al., New Strategy for Chemical Modification of Hyaluronic Acid: Preparation of Functionalized Derivatives and Their Use in the Formation of Novel Biocompatible Hydrogels, Journal of Biomedical Materials Research, vol. 47, Issue 2, (Aug. 1999), pp. 152-169, (Abstract only). |
Canaria et al., Formation and Removal of Alkylthiolate Self-Assembled Monolayers on Gold in Aqueous Solutions, Royal Society of Chemistry, Lab Chip, vol. 6, (2006), pp. 289-295, (Abstract only). |
Candau et al., Synthesis and Characterization of Polystyrene-poly(ethylene oxide) Graft Copolymers, Polymer, vol. 18, (1977), pp. 1253-1257. |
Cavicchi et al., Solvent Annealed Thin Films of Asymmetric Polyisoprene-Polylactide Diblock Copolymers, Macromolecules, vol. 40, (2007), pp. 1181-1186. |
Cha et al., Biomimetic Approaches for Fabricating High-Density Nanopattemed Arrays, Chem. Mater., vol. 19, (2007), pp. 839-843. |
Chai et al., Assembly of Aligned Linear Metallic Patterns on Silicon, Nature Nanotechnology, vol. 2, (Aug. 2007), pp. 500-506. |
Chai et al., Using Cylindrical Domains of Block Copolymers to Self-Assemble and Align Metallic Nanowires, American Chemical Society, www.acsnano.org, (2008), pp. A-M. |
Chandekar et al., Template-Directed Adsorption of Block Copolymers on Alkanethiol-Patterned Gold Surfaces, (2006), http://www.nano.neu.edu/industry/industry—showcase/industry—day/documents/Chandekar.pdf) (Powerpoint template for scientific posters (Swarthmore College)), 1 page. |
Chang et al., Diblock Copolymer Directed Self-Assembly for CMOS Device Fabrication, Proc. of SPIE, vol. 6156, (2006), pp. 615611-1-615611-6. |
Chang, et al., Experimental Demonstration of Aperiodic Patterns of Directed Self-Assembly by Block Copolymer Lithography for Random Logic Circuit Layout, IEEE International Electron Devices Meeting (IEDM), paper 33.2, (Dec. 6-8, 2010), pp. 33.2.1-33.2.4. |
Chen et al., Highly Ordered Arrays of Mesoporous Silica Nanorods with Tunable Aspect Ratios from Block Copolymer Thin Films, Advanced Materials, vol. 20, (2008), pp. 763-767. |
Cheng et al., Rapid Directed Self Assembly of Lamellar Microdomains from a Block Copolymer Containing Hybrid, Applied Physics Letters, vol. 91, (2007), pp. 143106-1-143106-3. |
Cheng et al., Self-Assembled One-Dimensional Nanostructure Arrays, Nano Letters, vol. 6, No. 9, (2006), pp. 2099-2103. |
Cheng et al., Templated Self-Assembly of Block Copolymers: Effect of Substrate Topography, Adv. Mater., vol. 15, No. 19, (2003), pp. 1599-1602. |
Cheng et al., “Templated Self-Assembly of Block Copolymers: Top-Down Helps Bottom-Up,” Adv. Mater. (2006), vol. 18, pp. 2505-2521. |
Cho et al., Nanoporous Block Copolymer Micelle/Micelle Multilayer Films with Dual Optical Properties, J. Am. Chem. Soc., vol. 128, No. 30, (2006), pp. 9935-9942. |
Choi et al., Magnetorheology of Synthesized Core-Shell Structured Nanoparticle, IEEE Transactions on Magnetics, vol. 41, No. 10, (Oct. 2005), pp. 3448-3450. |
Clark et al., Selective Deposition in Multilayer Assembly: SAMs as Molecular Templates, Supramolecular Science, vol. 4, (1997), pp. 141-146. |
Daoulas et al., Fabrication of Complex Three-Dimensional Nanostructures from Self-Assembling Block Copolymer Materials on Two-Dimensional Chemically Patterned Templates with Mismatched Symmetry, Physical Review Letters, vol. 96, (Jan. 24, 2006), pp. 036104-1-036104-4. |
Darling, Directing the Self-Assembly of Block Copolymers, Progress in Polymer Science, vol. 32, No. 10, (Jun. 2, 2007), pp. 1152-1204. |
Desai et al., Engineered Silicon Surfaces for Biomimetic Interfaces, Business Briefing: Medical Device Manufacturing & Technology, (2002), pp. 1-4. |
Edwards et al., Mechanism and Kinetics of Ordering in Diblock Copolymer Thin Films on Chemically Nanopatterned Substrates, Journal of Polymer Science: Part B: Polymer Physics, vol. 43, (2005), pp. 3444-3459. |
Edwards et al., Precise Control over Molecular Dimensions of Block-Copolymer Domains Using the Interfacial Energy of Chemically Nanopatterned Substrates, Advanced Mater., vol. 16, No. 15, (Aug. 4, 2004), pp. 1315-1319. |
Elisseeff et al., Photoencapsulation of Chondrocytes in Poly(ethylene oxide)-Based Semi-interpenetrating Networks, Journal of Biomedical Materials Research, vol. 51, No. 2, (Aug. 2000), pp. 164-171, (Abstract only). |
Erlandsson et al., Metallic Zinc Reduction of Disulfide Bonds Between Cysteine Residues in Peptides and Proteins, Int'l J. Peptide Res. & Therapeutics, vol. 11, No. 4, (Dec. 2005), pp. 261-265. |
Fasolka et al., Block Copolymer Thin Films: Physics and Applications, Annual Review of Materials Res., vol. 31, (Aug. 2001), pp. 323-355. |
Fasolka et al., Morphology of Ultrathin Supported Diblock Copolymer Films: Theory and Experiment, Macromolecules, vol. 33, No. 15, (2000), pp. 5702-5712. |
Fujita et al., Thin Silica Film with a Network Structure as Prepared by Surface Sol-Gel Transcription on the Poly (styrene-b-4-vinylpyridine) Polymer Film, Chemistry Letters, vol. 32, No. 4, (Mar. 13, 2003), pp. 352-353. |
Fukunaga et al., Self-Assembly of Block Copolymer Thin Films Having a Half-Domain-Spacing Thickness: Nonequilibrium Pathways to Achieve Equilibrium Brush Layers Parallel to Substrate, Macromolecules, vol. 39, (Aug. 2006), pp. 6171-6179. |
Gates et al., Unconventional Nanofabrication, Annu. Rev. Mater. Res., vol. 34, (2004), pp. 339-372. |
Gates, Nanofabrication with Molds & Stamps, Materials Today, (Feb. 2005), pp. 44-49. |
Ge et al., Thermal Conductance of Hydrophilic and Hydrophobic Interfaces, Physical Review Letters, vol. 96, (May 8, 2006), pp. 186101-1-186101-4. |
Gelest, Inc., Silane Coupling Agents: Connecting Across Boundaries, v2.0, ( 2006), pp. 1-56. |
Genua et al., Functional Patterns Obtained by Nanoimprinting Lithography and Subsequent Growth of Polymer Brushes, Nanotechnology, vol. 18, (2007), pp. 1-7. |
Gillmor et al., Hydrophilic/Hydrophobic Patterned Surfaces as Templates for DNA Arrays, Langmuir, vol. 16, No. 18, (2000), pp. 7223-7228. |
Grubbs, Hybrid Metal-Polymer Composites from Functional Block Copolymers, J. of Polymer Sci.: Part A: Polymer Chemistry, vol. 43, Issue 19, (Oct. 1, 2005), pp. 4323-4336. |
Guarini et al., Nanoscale Patterning Using Self-Assembled Polymers for Semiconductor Applications, J. Vac. Sci. Technol. B 19(6), (Nov./Dec. 2001), pp. 2784-2788. |
Gudipati et al., Hyperbranched Fluoropolymer and Linear Poly(ethylene glycol) Based Amphiphilic Crosslinked Networks as Efficient Antifouling Coatings: An Insight into the Surface Compositions, Topographies, and Morphologies, Journal of Polymer Science: Part A: Polymer Chemistry, vol. 42, (2004), pp. 6193-6208. |
Guo et al., Synthesis and Characterization of Novel Biodegradable Unsaturated Poly(ester amide)/Poly(ethylene glycol) Diacrylate Hydrogels, Journal of Polymer Science Part A: Polymer Chemistry, vol. 43, Issue 17, (2005), pp. 3932-3944 (Abstract only). |
Hadziioannou, Semiconducting Block Copolymers for Self-Assembled Photovoltaic Devices, MRS Bulletin, (Jun. 2002), pp. 456-460. |
Hamers, Passivation and Activation: How Do Monovalent Atoms Modify the Reactivity of Silicon Surfaces? A Perspective on the Article, “The Mechanism of Amine Formation on Si(100) Activated with Chlorine Atoms”, by C.C. Finstad, A.D. Thorsness, and A.J. Muscat, Surface Sci., vol. 600, (2006), pp. 3361-3362. |
Hamley, I. W., Introduction to Block Copolymers, Developments in Block Copolymers Science and Technology, John Wiley & Sons, Ltd., (2004), pp. 1-29. |
Hammond et al., Temperature Dependence of Order, Disorder, and Defects in Laterally Confined Diblock Copolymer Cylinder Monolayers, Macromolecules, vol. 38, (Jul. 2005), pp. 6575-6585. |
Harrison et al., Layer by Layer Imaging of Diblock Copolymer Films with a Scanning Electron Microscope, Polymer, vol. 39, No. 13, (1998), pp. 2733-2744. |
Hawker et al., Facile Synthesis of Block Copolymers for Nanolithographic Applications, Polymer Preprints, American Chemical Society, vol. 46, No. 2, (2005), pp. 239-240. |
Hawker et al., Improving the Manufacturability and Structural Control of Block Copolymer Lithography, Abstracts of Papers, 232nd ACS National Meeting, San Francisco, CA, (Sep. 10-14, 2006), 1 page, (Abstract only). |
Hayward et al., Crosslinked Poly(styrene)-block-Poly(2-vinylpyridine) Thin Films as Swellable Templates for Mesostructured Silica and Titania, Advanced Materials, vol. 17, (2005), pp. 2591-2595. |
He et al., Self-Assembly of Block Copolymer Micelles in an Ionic Liquid, J. Am. Chem. Soc., vol. 128, (2006), pp. 2745-2750. |
Helmbold et al., Optical Absorption of Amorphous Hydrogenated Carbon Thin Films, Thin Solid Films, vol. 283, (1996), pp. 196-203. |
Helmuth et al., High-Speed Microcontact Printing, J. Am. Chem. Soc., vol. 128, No. 29, (2006), pp. 9296-9297. |
Hermans et al., Application of Solvent-Directed Assembly of Block Copolymers to the Synthesis of Nanostructured Materials with Low Dielectric Constants, Angewandte Chem. Int'l. Ed., vol. 45, Issue 40, (Oct. 13, 2006), pp. 6648-6652. |
Horiuchi et al., Three-Dimensional Nanoscale Alignment of Metal Nanoparticles Using Block Copolymer Films as Nanoreactors, Langmuir, vol. 19, (2003), pp. 2963-2973. |
Lacour et al., Stretchable Gold Conductors on Elastomeric Substrates, Applied Physics Letters, vol. 82, No. 15, (Apr. 14, 2003), pp. 2404-2406. |
Huang et al., Using Surface Active Random Copolymers to Control the Domain Orientation in Diblock Copolymer Thin Films, Macromolecules, vol. 31, (1998), pp. 7641-7650. |
Hur et al., Nanotransfer Printing by Use of Noncovalent Surface Forces: Applications to Thin-Film Transistors That Use Single-Walled Carbon Nanotube Networks and Semiconducting Polymers, Applied Physics Letters, vol. 85, No. 23, (Dec. 6, 2004), pp. 5730-5732. |
Hutchison et al., Polymerizable Living Free Radical Initiators as a Platform to Synthesize Functional Networks, Chem. Mater., vol. 17, No. 19, (2005), pp. 4789-4797. |
Ikeda et al., Control of Orientation of Thin Films of Organic Semiconductors by Graphoepitaxy, Nanotech Japan Bulletin—NIMS International Center for Nanotechnology Network., vol. 3, No. 3, (Dec. 17, 2010), 23 pages. |
In et al., Side-Chain-Grafted Random Copolymer Brushes as Neutral Surfaces for Controlling the Orientation of Block Copolymer Microdomains in Thin Films, Langmuir, vol. 22, No. 18, (2006), pp. 7855-7860. |
International Search Report for International Application No. PCT/US2009/062117 dated Jun. 1, 2010, 3 pages. |
International Written Opinion for International Application No. PCT/US2009/062117 dated Jun. 1, 2010. |
International Preliminary Report on Patentability for International Application No. PCT/US2009/062117 dated May 3, 2011, 4 pages. |
Ji et al., Generalization of the Use of Random Copolymers to Control the Wetting Behaviors of Block Copolymer Films, Macromolecules, vol. 41, No. 23, (2008), pp. 9098-9103. |
Ji et al., Molecular Transfer Printing Using Block Copolymers, ACS Nano, vol. 4, No. 2, (2010), pp. 599-609. |
Ji et al., Preparation of Neutral Wetting Brushes for Block Copolymer Films from Homopolymer Blends, submitted to Advanced Materials, vol. 20, No. 16, (Jul. 7, 2008), pp. 3054-3060. |
Jiang et al., Electrochemical Desorption of Self-Assembled Monolayers Noninvasively Releases Patterned Cells from Geometrical Confinements, J. Am. Chem. Soc., vol. 125, No. 9, (2003), pp. 2366-2367. |
Johnson et al., Probing the Stability of the Disulfide Radical Intermediate of Thioredoxin Using Direct Electrochemistry, Letters in Peptide Sci., vol. 10, (2003), pp. 495-500. |
Jun et al., Microcontact Printing Directly on the Silicon Surface, Langmuir, vol. 18, No. 9, (2002), pp. 3415-3417, (Abstract only). |
Jun et al., Patterning Protein Molecules on Poly(ethylene glycol) Coated Si(111), Biomaterials, vol. 25, (2004), pp. 3503-3509. |
Karim et al., Control of Ordering Kinetics and Morphology Using Zone Annealing of Thin Block Copolymer Films, Abstract submitted for the Mar. 2007 Meeting of the American Physical Society, (Nov. 20, 2006), 2 pages. |
Kavakli et al., Single and Double-Layer Antireflection Coatings on Silicon, Turk J. Phys., vol. 26, (2002), pp. 349-354. |
Kim et al., Epitaxial Self-Assembly of Block Copolymers on Lithographically Defined Nanopatterned Substrates, Nature, vol. 424, (Jul. 24, 2003), pp. 411-414. |
Kim et al., Highly Oriented and Ordered Arrays from Block Copolymers via Solvent Evaporation, Adv. Mater., vol. 16, No. 3, (Feb. 3, 2004), pp. 226-231. |
Kim et al., Hybrid Nanofabrication Processes Utilizing Diblock Copolymer Nanotemplate Prepared by Self-Assembled Monolayer Based Surface Neutralization, J. Vac. Sci. Technol. B, vol. 26, No. 1, (Jan./Feb. 2008), pp. 189-194. |
Kim et al., In Vitro Release Behavior of Dextran-methacrylate Hydrogels Using Doxorubicin and Other Model Compounds, J. Biomater. Appl., vol. 15, No. 1, (Jul. 2000), pp. 23-46, (Abstract only). |
Kim et al., Novel Complex Nanostructure from Directed Assembly of Block Copolymers on Incommensurate Surface Patterns, Adv. Mater., vol. 19, (2007), pp. 3271-3275. |
Kim et al., Salt Complexation in Block Copolymer Thin Films, Macromolecules, vol. 39, No. 24, (2006), pp. 8473-3479. |
Kim et al., Self-Assembled Hydrogel Nanoparticles Composed of Dextran and Poly(ethylene glycol) Macromer, Int. J. Pharm., vol. 205, No. 1-2, (Sep. 15, 2000), pp. 109-116, (Abstract only). |
Kim et al., Solvent-Induced Ordering in Thin Film Diblock Copolymer/Homopolymer Mixtures, Advanced Mater., vol. 16, No. 23-24, (Dec. 17, 2004), pp. 2119-2123. |
Kim et al., Synthesis and Characterization of Dextran-methacrylate Hydrogels and Structural Study by SEM, J. Biomater. Res., vol. 49, No. 4, (Mar. 15, 2000), pp. 517-527, (only). |
Knoll et al., Phase Behavior in Thin Films of Cylinder-Forming Block Copolymers, Physical Review Letters, vol. 39, No. 3, (Jul. 15, 2002), pp. 035501-1-035501-4. |
Krishnamoorthy et al., Block Copolymer Micelles as Switchable Templates for Nanofabrication, Langmuir, vol. 22, No. 8, (2006), pp. 3450-3452. |
Number | Date | Country | |
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20160163536 A1 | Jun 2016 | US |
Number | Date | Country | |
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Parent | 14176574 | Feb 2014 | US |
Child | 15044713 | US | |
Parent | 12259921 | Oct 2008 | US |
Child | 13335107 | US |
Number | Date | Country | |
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Parent | 13335107 | Dec 2011 | US |
Child | 14176574 | US |