Claims
- 1. A microlithographic resist composition consisting essentially of a photoresist-forming resin and admixed therewith, in an amount from about 3.6% to about 15% by weight of said resist composition, a poly(dialkyl-silazane) in which from 100% to 50% of the monomeric units have hydrogen attached directly to the nitrogen atom, with the remainder of the monomeric units having only alkyl groups attached to the nitrogen atom, and with the alkyl groups being either methyl or ethyl.
- 2. A composition as claimed in claim 1 wherein the poly(dialkylsilazane) is poly(1,1-dimethylsilazine).
- 3. A composition as claimed in claim 1 wherein the resist is a positive resist.
- 4. A composition as claimed in claim 1 wherein the resist is a negative resist.
- 5. A composition as claimed in claim 1 wherein the resist resin is a novolac resin.
- 6. A composition as claimed in claim 1 wherein the poly(dialkylsilazane) is a solid.
Parent Case Info
The present application is a continuation of co-pending application, Ser. No. 06/908,748, filed Sept. 18, 1986 and now abandoned.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
3911169 |
Lesaicherre et al. |
Oct 1975 |
|
4451969 |
Chaudhuri |
Jun 1984 |
|
4599243 |
Sachder et al. |
Jul 1986 |
|
Non-Patent Literature Citations (1)
Entry |
Ueno et al., Preprints of the 4th Technical Conference on Photopolymers, Jul. 11-12, 1985, Tokyo, Japan. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
908748 |
Sep 1986 |
|