The present invention is directed to a micromechanical component.
An example of a micromechanical component is described in German Published Patent Application No. 10 2007 044 808, which describes a micromechanical component having a first wafer and a second wafer, the first wafer having at least one structural element and the second wafer having at least one mating structural element, the first and/or second wafer having a function area surrounded by a density area.
In eutectic bonding, in general two materials which have a lowest melting point, the so-called eutectic point, in their phase diagrams are brought into contact. At the proper temperature and with the proper mixing ratio, the two materials melt to foam a eutectic. The material melts below the melting point of the corresponding bond materials.
Since the two materials come into contact for eutectic bonding, the wafers on which the individual layers are situated, i.e., a carrier substrate and a cap substrate, are compressed under pressure and acted upon by temperature. The individual layers are usually structured in advance to join only defined areas on a wafer, namely edge areas, which typically surround structured areas in the interior of the wafer or the carrier or cap substrate. At the moment when the eutectic point and thus the liquid phase are reached during heating, local liquefaction of the eutectic may occur, possibly even spreading uncontrollably outside of the edge area of the carrier substrate or of the cap substrate. If the liquid phase, i.e., the eutectic, penetrates into the structured area of the carrier substrate or the cap substrate, which may result in local bonding of sensor structures which are actually mobile, for example, mobile masses of acceleration sensors or yaw rate sensors, such a micromechanical component will no longer be usable subsequently, so the reject rate and thus manufacturing costs are increased.
The micromechanical component according to the present invention and the method according to the present invention for manufacturing a micromechanical component have the advantage in comparison with the related art that liquefaction of eutectic (or solder material) into regions of the carrier and/or cap substrate to be protected, in particular the structured area of the carrier and/or cap substrate—for example, the liquefaction of eutectic into sensor cores, such as acceleration sensors or yaw rate sensors, for example—is prevented by suitable stop structures. This is accomplished according to the present invention by the fact that a stop trench is provided in the first bordering area or in the second bordering area. Such a stop trench may also be provided in the first bordering area (of the carrier substrate) and in the second bordering area (of the cap substrate). As an alternative to providing one or multiple stop trenches, it may also be provided according to the present invention that a stop protrusion, i.e., a so-called spacer structure, for example, is situated in the first or second bordering area. As an alternative to this, it is also provided according to the present invention that a stop protrusion is provided in the first bordering area and another stop protrusion is provided in the second bordering area. Furthermore, it is also provided according to the present invention that both a stop trench and a stop protrusion are provided in the first or second bordering areas. Either the stop protrusion is provided in the first bordering area and the stop trench is provided in the second bordering area or vice-versa, or both the stop trench and the stop protrusion are provided in the first bordering area or in the second bordering area or in both the first bordering area and the second bordering area. It is advantageous in this way and easily possible to effectively prevent the penetration of eutectic, or the liquid phase in particular, into the structured area of the carrier substrate and/or the cap substrate, for example, in acceleration sensors and yaw rate sensors or micromirrors. Furthermore, when using stop protrusions or so-called spacer structures, it is also advantageously possible to homogenize the pinch height of the eutectic, i.e., the connecting layer(s) in the first connecting area of the carrier substrate and in the second connecting area of the cap substrate or between the first and second connecting areas, namely to make the entire connecting area of a single micromechanical element more uniform as well as making the manufacturing process of joining the carrier substrate and the cap substrate more reproducible over many micromechanical components and to do so with less scattering of the pinch height.
According to the present invention, the stop protrusion made of a thermal oxide material in particular is provided. It is advantageously preferably provided according to the present invention that the stop protrusion in particular is provided as a material applied to the material of the carrier substrate and/or to the material of the cap substrate or a material formed in the surface area of the carrier or cap substrate, in particular in the form of a structured layer, in particular made of an oxide material, preferably a thermal oxide material. This is advantageous in particular because—in particular in contrast with a structuring of the stop protrusion, in such a way that, out of the material of the carrier substrate and/or out of the material of the cap substrate, a selective etching of the material of the carrier substrate and/or of the cap substrate, typically with a comparatively poor uniformity of etching (uniformity of etching, i.e., etching uniformity) in the range of approximately ±5% accuracy over the entire area of a wafer is carried out—the deposition or formation of a layer of an oxide material (in particular silicon oxide and in particular thermal (silicon) oxide material) having a comparatively good uniformity of the layer thickness (uniformity) over the entire area of a wafer is possible, for example, with a layer thickness uniformity in the range of ±1% of the layer thickness of the deposited oxide layer (for example, after the oxide layer is formed, it is then etched (in particular in BOE), which is possible selectively to yield silicon), the layer thickness of the thermal oxide layer being on the order of magnitude of 0.5 micrometers to 2.5 micrometers, for example.
It is true in principle that for the design of the spacer thickness, the connecting materials in the connecting areas may be reliably brought into contact everywhere, and the volume resulting from the spacer thickness and the distance of the spacers from the connecting area is reliably able to receive the eutectic as it is liquefied.
The carrier substrate and/or the cap substrate preferably include(s) a semiconductor material, in particular silicon, which is structured accordingly to form the sensor structure, in particular a mobile mass or coupling springs. The structuring preferably takes place as part of lithography process steps and/or etching process steps and/or deposition process steps.
According to a preferred specific embodiment, it is provided that the first bordering area is situated between the first connecting area and the first structured area, and the second bordering area is situated between the second connecting area and the second structured area. According to the present invention, it is advantageously possible in this way to effectively prevent the penetration of the liquid phase of the eutectic into the structured area of both the carrier substrate and the cap substrate during joining of the carrier substrate and the cap substrate because the first bordering area for the carrier substrate and the second bordering area for the cap substrate represent a limit for the material of the liquid phase of the eutectic situated in the first and second connecting areas and it is prevented in this way from penetrating into the structured area of the carrier substrate or of the cap substrate.
Furthermore, it is preferred according to the present invention that the first edge area has a third bordering area in addition to the first bordering area and that the second edge area has a fourth bordering area in addition to the second bordering area, the first connecting area being situated between the first and third bordering areas (of the carrier substrate) and the second connecting area being situated between the second and fourth bordering areas (of the cap substrate). In this way according to the present invention, it is advantageously possible in a particular manner to limit the materials for the manufacture of the eutectic bond, in particular during their liquid phase during joining of the carrier substrate and the cap substrate, to the area of the first and second connecting areas of the carrier and cap substrates and thus to prevent penetration into the first and second structured areas of the carrier or cap substrate as well as to prevent the liquid phase of the eutectic from escaping to the outside out of the area of the first and second connecting areas.
Furthermore, it is preferred according to the present invention that the first edge area completely surrounds the first structured area on the first connecting side and the second edge area completely surrounds the second structured area on the second connecting side. It is advantageously possible in this way according to the present invention that a complete sealing of the atmosphere in the structured area is enabled, and that in particular the development of a high pressure or a low pressure or the establishment of an atmosphere in the structured area between the carrier substrate and the cap substrate is implementable.
Furthermore, it is also preferred according to the present invention that the eutectic bond connection comes about through a first bond partner and a second bond partner, the first bond partner being provided in the first connecting area and the second bond partner being provided in the second connecting area. The eutectic connection may be implemented in a particularly efficient manner in this way. The bond alloy preferably consists of one of the following mixtures: Au—Si, Al—Ge, Al—Cu—Ge, Cu—Sn, Au—Sn, Au—In, Al—Ge—Si, Al—Cu—Ge—Si, Au—Ge. In principle, all alloy partners which may be used in micromechanics are conceivable. Alloy partners whose phase diagrams provide a eutectic alloy are particularly preferred. Al—Ge is an example of one such alloy. The melting points of the two bond materials are 660° C. for pure aluminum and 938° C. for pure germanium. The melting point at the eutectic point is 420° C. The critical bond temperature required for bonding depends on the mixture and interdiffusion of the materials used during eutectic bonding. In the ideal case, a liquid phase is formed at the melting point at the eutectic point. In the exemplary case of the Al—Ge alloy, the actual bond temperature is usually in the range of 220° C. to 450° C.
Another subject matter of the present invention is a method for manufacturing a micromechanical component. According to the present invention, in a first manufacturing step, on the one hand, the carrier material having the micromechanical structure and, on the other hand, the cap substrate are manufactured, and in a second step the carrier substrate and the cap substrate are joined by connecting the first connecting side and the second connecting side. It is thus advantageously possible to manufacture a more compact micromechanical component in comparison with the related art while nevertheless a secure joint between the carrier substrate and the cap substrate is implementable.
Exemplary embodiments of the present invention are depicted in the drawings and explained in greater detail in the following description.
The same parts are always provided with the same reference numerals in the various figures and are each therefore generally cited or mentioned only once.
According to a first variant of micromechanical component 10,
In the implementation of the stop protrusions, according to the present invention the volume defined by the stop protrusion for bond materials 11, 12 and for eutectic bond connection 15 is large enough to be able to receive the pinched eutectic. To ensure that the required volume is definitely present, it is possible and preferred according to the present invention as per the embodiments in
Materials which are not an integral part of the eutectic, for example, silicon oxide, silicon nitride, silicon or the like are primarily used as materials for the stop protrusions. If the stop structures should be situated at a sufficient distance (in the lateral direction) from connecting materials 11, 12, then the stop protrusions may also be made of the same materials as connecting materials 11, 12.
According to a preferred specific embodiment, it is further conceivable to provide stop trenches and stop protrusions also in the case metallic solder connections or glass solder connections (e.g., glass frit) to be able to define the solder thickness and the usable pinch area here.
Number | Date | Country | Kind |
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10 2012 206 869.4 | Apr 2012 | DE | national |