Patent Application
20240182297
This application claims the benefit of European Patent Application No. 22210912, filed on Dec. 1, 2022 which application is hereby incorporated herein by reference.
Embodiments of the present disclosure related to a micromechanical environmental barrier chip for providing a protection for microelectromechanical systems (MEMS) microphones or MEMS speakers against ingress of environmental solid, gaseous and/or moist particles. Further embodiments relate to a manufacturing method related to the micromechanical environmental barrier chip.
Despite their wide employment in several acoustic applications like smartphones, true wireless (TWS) earphones, etc., current microelectromechanical system (MEMS)-based microphones are prone to influences from dust particles, moisture, and other physical or chemical objects, which consequently result in a lower robustness and shortened lifetime of the devices.
Currently available solutions from microphone manufacturers rely on external and large environmental barriers (EBs) that are placed far away from the microphone chips, leading to high production cost, large package size, low acoustic performance, and limited usage for applications.
Thus, it would be desirable to provide a microstructured environmental barrier for MEMS-based acoustic elements, the environmental barrier comprising a small form factor while providing reliable and robust protection against ingress of environmental solid, gaseous and/or moist particles. It would further be desirable to provide a manufacturing method thereof that enables a reduction in production costs.
These goals can be achieved with a method for manufacturing a micromechanical environmental barrier chip according to the present disclosure. The method can include a step of providing a substrate having a first surface and an opposite second surface, a step of depositing a material layer onto the first surface of the substrate, the material layer having a different etch rate than the substrate, and a step of creating a microstructured micromechanical environmental barrier structure on top of the material layer by applying a microstructuring process. The method may further include a step of applying an anisotropic etching process comprising at least one etching step for anisotropically etching from the second surface towards the first surface of the substrate so as to create at least a first cavity underneath the micromechanical environmental barrier structure, the cavity extending between the second surface and the material layer. The method may further include a step of removing the material layer residing inside the cavity in order to expose the environmental barrier structure.
In one aspect, a method for manufacturing a micromechanical environmental barrier chip is disclosed. The method may include providing a substrate having a first substrate surface and an opposite second substrate surface, depositing a material layer onto the first substrate surface, the material layer having a different etch characteristic than the substrate, creating a microstructured micromechanical environmental barrier structure on top of the material layer by applying a microstructuring process, applying an anisotropic etching process comprising at least one etching step for anisotropically etching through the substrate until reaching the material layer to create at least a first cavity opposite the micromechanical environmental barrier structure, and removing the material layer located inside the cavity to expose the environmental barrier structure.
In another aspect, a first micromechanical environmental barrier chip is disclosed. The first micromechanical environmental barrier chip may include a substrate having a first substrate surface and an opposite second substrate surface, a material layer on top of the first substrate surface, the material layer having a different etch characteristic than the substrate, a microstructured micromechanical environmental barrier structure on top of the material layer, at least a first cavity opposite the micromechanical environmental barrier structure, where the material layer located inside the cavity is absent and the environmental barrier structure is exposed.
In yet a further aspect, a second micromechanical environmental barrier chip is disclosed. The second micromechanical environmental barrier chip may include a substrate having a first substrate surface and an opposite second substrate surface, a material layer deposited onto the first substrate surface, the material layer having a different etch characteristic than the substrate, a microstructured micromechanical environmental barrier structure deposited on top of the material layer, and at least a first cavity opposite the micromechanical environmental barrier structure, wherein the material layer located inside the cavity is absent and the environmental barrier structure is exposed. In the second micromechanical environmental barrier chip, the substrate can be a wafer from which a plurality of micromechanical environmental barrier chips are produced.
In the following, embodiments of the present disclosure are described in more detail with reference to the figures, in which:
Equal or equivalent elements or elements with equal or equivalent functionality are denoted in the following description by equal or equivalent reference numerals.
Method steps which are depicted by means of a block diagram and which are described with reference to the block diagram may also be executed in an order different from the depicted and/or described order. Furthermore, method steps concerning a particular feature of a device may be replaceable with the feature of the device, or vice-versa. Method steps may be rearranged or omitted in some embodiments.
In block 101, a substrate may be provided, the substrate having a first surface and an opposite second surface. In block 102 a material layer may be deposited onto the first surface of the substrate, the material layer having a different etch characteristic than the substrate. An etch characteristic may include a certain selectivity. The selectivity describes an etch ratio between two different materials. For example, if the selectivity is 2:1, then a first material will be etched/removed two times faster than a second material, when applying the same etching process for the same time duration on both materials.
In block 103 a microstructured micromechanical environmental barrier structure may be provided on top of the material layer by applying a microstructuring process. In block 104 an anisotropic etching process may be performed comprising at least one etching step for anisotropically etching through the substrate (e.g. from the second surface towards the first surface of the substrate) until reaching the material layer so as to create at least a first cavity opposite (e.g. underneath) the micromechanical environmental barrier structure, the cavity extending between the second surface and the material layer. In block 105 any of the material layer that resides inside the cavity may be removed in order to expose the environmental barrier structure.
Starting with
Accordingly, as will be explained in more detail below, the material layer 210 may serve the purpose of an etch stop layer. For example, the material layer 210 may consist of or comprise tetraethyl orthosilicate, formally named tetraethoxysilane (TEOS), or other oxide (e.g., thermal silicon dioxides —SiO2—, atomic layer deposited oxide) and nitride (e.g., silicon nitride) materials. These materials have an insulating characteristic. For example, the etch rate between TEOS (as the material layer 210) and silicon (substrate 200) is about 1:100, i.e., silicon is etched/removed a hundred times faster than TEOS.
The micromechanical environmental barrier structure 220 may comprise a circular or rectangular shape, while other geometrical shapes are possible. The micromechanical environmental barrier structure 220 may comprise vertically extending rib structures 221 that may extend through the material layer 210 and penetrate into the substrate 200, as shown in
The micromechanical environmental barrier structure 220 may be fabricated using wafer-level front-end processing. A main layer of the micromechanical environmental barrier structure 220 may comprise various materials used in front-end semiconductor processing, which include but are not limited to silicon, nitride, stacked silicon/nitride, and polymeric materials, e.g., polyimide, poly(methyl methacrylate) (PMMA), polydimethylsiloxane (PDMS), SU-8, and benzocyclobutene (BCB). The micromechanical environmental barrier structure 220 may be rigid and may provide sufficient large hole openings (e.g., 10 μm to 40 μm) to avoid high loss of signal-to-noise ratio (SNR) and sensitivity.
As mentioned above, the material layer 210 may serve as an etch stop layer. Accordingly, the substrate 200 may be etched until the etchant reaches the material layer 210. Even though not explicitly shown in
After removal of the material layer 210 underneath the micromechanical environmental barrier structure 220, as shown in
The micromechanical environmental barrier structure 220 may be configured to let a first amount of air pass through while preventing a second amount of at least one of moisture, liquids, oil and solid environmental particles from passing through.
Meanwhile, reference shall be made to
The nanofibers 240 may be deposited by using electrospinning techniques. Various electrospinning methods can be opted, including needleless electrospinning, multi-jet electrospinning, cylindrical porous hollow tube electrospinning, bubble electrospinning, coaxial electrospinning, melt electrospinning, force-spinning, flash-spinning, self-bundling electrospinning, nanospider electrospinning, and charge injection electrospinning.
For example, electrospun nanofibers 240 may possess superhydrophobic characteristics and may provide a self-cleaning effect (lotus effect). Surface chemistry modification by organic self-assembled monolayers (SAMs), stearic acid-based modifiers, and nanoparticles (e.g., Ag, SiO2, and TiO2) can be carried out to further lower the surface energy of the roughened nanofiber surfaces resulting in improved hydrophobicity. The SAMs may consist of or comprise fluoroalkylsilanes (FAS), perfluorodecyltrichlorosilane (FDTS), and methyltrimethoxysilane (MTMS).
Accordingly, embodiments of the herein described innovative method may comprise a step of applying a surface chemistry modification to the applied nanofibers 240 by depositing at least one of
Besides the above mentioned exemplary components, the organic self-assembled monolayers may comprise, or may consist of, at least one of:
As mentioned above, the innovative micromechanical environmental barrier chip 500 may be used with micromechanical MEMS-based acoustic components, like MEMS microphones, MEMS speaker or the like. To maintain a high SNR (Signal-to-Noise Ratio) of the MEMS-based acoustic components, and at the same time to provide a good environmental robustness towards particles and water, a thin layer of nanofibers 240 may be deposited allowing high airflow through the holes or pores of the micromechanical environmental barrier structure 220.
To improve the adhesion between the applied nanofibers 240 and the micromechanical environmental barrier structure 220, several strategies can be applied, e.g. insertion of an adhesion promoter as a middle layer between the applied nanofibers 240 and the micro-mechanical environmental barrier structure 220, increasing the surface roughness of the micromechanical environmental barrier structure 220, or a three-dimensional (3D) modification of the micromechanical environmental barrier structure 220.
As shown in
The nanofibers 240 may be applied on either one of a first side 251 (top) or a second side 252 (bottom) of the micromechanical environmental barrier structure 220. Alternatively, the nanofibers 240 may be applied on both the first and second sides 251, 252 (top and bottom) of the micromechanical environmental barrier structure 220.
Accordingly, various embodiments of a MEMS-based mesh chip 500 integrated with a nanofiber membrane 240 are depicted. As shown in
Some materials used for the fabrication of nanofibers 240 (e.g. some polymers) may possess less optimal adhesion characteristics for adhering the nanofibers 240 to the environmental barrier structure 220 and/or to the substrate 200. Such reduced adhesion may be an issue if an air flow with high air pressure passes through the MEMS-based mesh chip 500. If the nanofibers 240 are not properly fixed to the environmental barrier structure 220, then they may be swept away. To keep the nanofibers 240 stable on their position after deposition (i.e., to increase the stability of the nanofibers 240 at higher air pressure), one or more additional layers having a geometrical shape comprising, for instance, a frame or a ring structure, may optionally be applied on top of the nanofibers 240. Hence, this additional layer(s) (e.g., metal) can hold or fix the nanofibers 240.
The various process stages and embodiments as described herein may be performed at wafer-level, wherein the substrate 200 may be a wafer from which a plurality of the above described micromechanical environmental barrier chips 500 can be produced. In this regard, the present disclosure may further comprise a step of singulating (e.g., by dicing) the plurality of micromechanical environmental barrier chips 500 from the wafer.
For facilitating the singulation process and enabling a pick-and-place joining method of the innovative environmental barrier chip 500 onto a printed circuit board (PCB) used in acoustic component packaging (e.g., for MEMS microphone packages), a device separation embodiment will be described herein by introducing thin microplates or microbeams between the single environmental barrier chips 500.
A non-limiting embodiment is depicted in
In this embodiment, the step of applying the anisotropic etching process may further include an anisotropic etching step for anisotropically etching from the second substrate surface 202 towards the first substrate surface 201 so as to create a second cavity 231 in the substrate 200. The second cavity 231 may include a larger lateral extension 303 than the first cavity 230.
The step of applying the anisotropic etching process may include a further anisotropic etching step for anisotropically etching a plurality of discontinuous trenches 260 into the substrate 200, and optionally also into the material layer 210. The plurality of discontinuous trenches 260 may vertically extend between the first substrate surface 201 and the second cavity 231. Additionally or alternatively, the plurality of discontinuous trenches 260 may laterally surround the micromechanical environmental barrier structure 220.
The term ‘discontinuous’ here means that the trenches 260 are not completely formed all around the environmental barrier structure 220, i.e., they are not fully surrounding the environmental barrier structure 220. Instead, some portions of substrate material may be left in between, such that the trenches 260 are separated from each other. These remaining portions of substrate material will form microbeams that hold the environmental barrier chip 500 on the substrate 200 prior to singulating it (e.g., by dicing). This shall be further explained with reference to
Starting from the uppermost picture row, the unprocessed substrate 200 is shown. The additional material layer 210 (e.g. TEOS) is deposited at the first substrate surface 201, and the environmental barrier structure 220 is arranged on top of the material layer 210. The uppermost picture row shows the fabrication of the micromechanical environmental barrier structure 220 by processing a main layer using surface MEMS micromachining methods. Here, the environmental barrier structure 220 may be created as either a mesh or a membrane. In this figure, a mesh is shown as an example. Optionally, nanofibers may be applied onto the environmental barrier structure 220. In case of a membrane, there is no grid created. Instead, small ventholes may be provided to enable airflow coming from the package sound port.
The second picture row (from top) shows a method step of applying the anisotropic etching process which may include applying an anisotropic etching step, e.g. Reactive Ion Etching (RIE) using a Bosch etching process, for anisotropically etching a cavity 231 into the substrate 200. This cavity 231 may correspond to the above described second cavity 231. As indicated by means of cross-hatched lines, the lateral/circumferential remaining portions 203 of the substrate 200, where the second cavity 231 was not formed, may be thicker (thickness measured between first (top) surface and second (bottom) surface of the unprocessed substrate 200 in the uppermost picture row) than the rest of the substrate 200, where the second cavity 231 was formed. In other words, the substrate 200 is thinned in an area, where the cavity 231 is formed. The second cavity 231 may include a larger lateral extension 303 than the first cavity 230, that may be formed in a next method step.
Reference is made to the third and fourth picture row (from top). The third picture row shows a top view of the environmental barrier chip 500 on the left, and a cross-sectional view along the cross sectional line E-E on the right. The fourth picture row shows a cross-sectional view along the cross sectional line D-D.
As can be seen in the third picture row (from top), a further cavity 230 is etched into the substrate 200 by applying an anisotropic etching step, e.g. Reactive Ion Etching (RIE), such as by using a Bosch etching process. This further cavity 230 may correspond to the above described first cavity 230 that is etched from the second substrate surface 202 up to the material layer 210, e.g. TEOS as an etch stop layer. Since the substrate 200 is thinned in this area, as mentioned above, the second substrate surface 202 may be the substrate surface of the thinned substrate 200, as shown in the picture. That is, the first cavity 230 may be etched into the thinned substrate 200, from the second surface 202 of the thinned substrate 200 up to the material layer 210. The first cavity 230 may include a lateral extension 301 that is equal to or smaller than the outer contour 302 (e.g., outer diameter) of the micromechanical environmental barrier structure 220.
As can further be seen in the third and fourth picture rows (from top), the anisotropic etching process may further include a step of anisotropically etching a plurality of discontinuous trenches 260 into the thinned substrate 200. This step may be performed at the same time as the above described step of creating the first cavity 230, i.e., the first cavity 230 and the discontinuous trenches 260 may be created in one and the same step of the anisotropic etching process. As can best be seen in the fourth picture row, the plurality of discontinuous trenches 260 may vertically extend between the first substrate surface 201 and the second cavity 231. That is, the discontinuous trenches 260 may be etched into the thinned portions of the substrate 200. As can best be seen in the top view of the third picture row, the plurality of discontinuous trenches 260 may laterally surround the micromechanical environmental barrier structure 220.
As mentioned above, the term ‘discontinuous’ here means that the trenches 260 are not completely formed all around the environmental barrier structure 220, i.e. they are not fully surrounding the environmental barrier structure 220. Instead, some portions of substrate material 290 may be left in between, such that the trenches 260 are separated from each other. These remaining portions 290 of substrate material will form micro beams 290 that hold the environmental barrier chip 500 on the substrate 200 prior to singulating it, e.g. by dicing.
Accordingly, the step of etching the plurality of discontinuous trenches 260 may include a step of leaving portions 290 of substrate material (optionally with the material layer 210 on top) inside the plurality of discontinuous trenches 260, such that these portions 290 form micro beams 290 which structurally connect the micromechanical environmental barrier chip 500 on one side of the plurality of discontinuous trenches 260 with the substrate 200 (e.g., a wafer) on an opposite other side of the plurality of discontinuous trenches 260.
Since the micro beams 290 are formed in the thinned substrate 200, the micro beams 290 may include the same thickness as the thinned substrate 200. Accordingly, the remaining thicker lateral/circumferential portions 203 (cross-hatched lines) of the substrate 200 may provide a frame structure at which the thinned substrate 200 may be suspended by means of the micro beams 290. Since the micro beams 290 may include the same thickness as the thinned substrate 200, the micro beams 290 can easily be broken/ruptured in order to singulate a single environmental barrier chip 500 from the substrate 200 during a pick-and-place process, in particular in case the substrate 200 is provided as a wafer. The last picture row (from top) shows a singulated environmental barrier chip 500.
Accordingly, the plurality of discontinuous trenches 260 may define the lateral size of the final singulated micromechanical environmental barrier chip 500. In other words, the above described etching steps may deem to define the final chip size after singulating the chip 500, as well as to create the thin micro beams 290 for separating the environmental barrier chip 500. The separation of the environmental barrier chip 500 from the wafer 200 may be done by using pick-and-place joining techniques. As a final device, a MEMS environmental barrier chip 500 on a thinned substrate 200 can be realized.
To create the thinned mechanical supporting substrate 200, a double Bosch etching process may be applied for creating the above described first and second cavities 230, 231. This method may be beneficial to avoid high SNR loss affected by a reduced back volume inside a lid of a MEMS microphone system, for example. A typical thickness of an initial unprocessed substrate 200, that may be used to create an environmental barrier structure 220 as described herein, may be between 200 μm and 500 μm, and preferably between 300 μm and 400 μm. Using anisotropic etching, e.g. a double Bosch etching process, the final environmental barrier chip 500 may include a thickness (i.e. height) between 20 μm and 150 μm, and preferably between 30 μm and 60 μm, depending on the used reactive ion etching (RIE) process parameters, especially the etching duration.
Accordingly, the unprocessed initial substrate 200 (prior to applying the anisotropic etching process) may include a thickness between 200 μm and 500 μm. By applying the anisotropic etching process, the second cavity 231 may be formed such that a thinned remaining portion of the substrate 200 results that includes a thickness between 20 μm to 150 μm and which defines the final thickness of the environmental barrier chip 500.
Even though not explicitly shown in
As shown in
In the non-limiting examples shown in
Accordingly, the micro beams 290 may include at least one of the following geometrical shapes:
Summarizing,
Additional stopping structures 330 (e.g., microwalls or microtrenches) may be created on the edge of the mechanical supporting substrate 200 to avoid adhesive (glue) to reach the environmental barrier structure 220, e.g., an active membrane area, during the joining process. The additional stopping structures 330 may be provided as a continuous trench, as exemplarily depicted.
According to an embodiment, the innovative method may include a step of etching a continuous trench 330 into the substrate 220 (and optionally into the material layer 210). As can best be seen in the top view, the continuous trench 330 may laterally surround the micromechanical environmental barrier structure 220. Alternatively, the trench 330 may be discontinuous. The trench 330 may preferably include a circular shape, while other geometrical shapes may be possible.
Even though the stopping structure 330 is depicted in combination with the above discussed micro beams 290, the stopping structure 330 for trapping the adhesive may also be provided in each of the other embodiments that may not necessarily include the micro beams 290 and/or the discontinuous trenches 260.
However, in case the micro beams 290 and/or discontinuous trenches 260 are available, then the stopping structure 330 (e.g. trench) may be located laterally between the micro-mechanical environmental barrier structure 220 and the micro beams 290, as shown in the top view of
Accordingly, the method may include creating a circular trench 330 for stopping the bleeding of any applied adhesive (e.g., glue, solder paste, or the like) during a joining process between the environmental barrier chip 500 and a further acoustic component, such as a MEMS microphone chip. This protecting trench concept is an additional optional feature for the joining technique that involves the environmental barrier chip 500 placed inside a lid of a sound component package, such as a MEMS microphone package, in particular if the environmental barrier chip 500 may be placed underneath the MEMS microphone chip.
As mentioned above, the whole process as described herein may be performed at wafer-level, wherein the substrate 200 may be a wafer from which a plurality of the above described micromechanical environmental barrier chips 500 may be singulated. In this regard, the innovative method may further include a step of singulating (e.g. by dicing) the plurality of micromechanical environmental barrier chips 500 from the wafer 200. For example, the micromechanical environmental barrier chips 500 may be fabricated using wafer-level front-end processing. Accordingly, the innovative micromechanical environmental barrier chip 500 may be integrated to the frontend chip, instead of manufacturing environmental barriers as individual devices. In result, it becomes possible to provide an acoustic component (e.g. a MEMS-microphone) with an integrated environmental barrier chip 500 directly in one and the same package. This may provide for a low-cost packaging solution for microphones with higher robustness against ingress of environmental solid, gaseous and/or moist particles.
Furthermore, the above described versatile device separation concept (by means of micro beams 290) may be applied not only for passive environmental barrier structures 220 (e.g. membrane, mesh, nanofiber membrane-integrated mesh chips), but also for active MEMS devices like microphones, pressure sensors, and others. The created environmental barrier chip 500 based on this separation method can be mounted into a microphone package in different architectures, as will be explained in more detail with reference to
In this non-limiting example, a MEMS microphone chip 605 may be arranged inside the cavity 604. Additionally, the herein described innovative micromechanical environmental barrier chip 500 may be arranged inside the cavity 604. Furthermore, a circuitry 606 may be arranged inside the cavity 604. The circuitry 606 may be provided as an integrated circuit (IC), for instance as an ASIC (Application Specific Integrated Circuit). The circuitry 606 may be electrically connected to the MEMS microphone chip 605, for example by means of bond wires 607.
As shown in
The environmental barrier chip 500 may be attached to the carrier substrate 601 by means of adhesive, e.g. glue. Additionally or alternatively, the MEMS microphone chip 605 may be attached to the environmental barrier chip 500 by means of an adhesive, e.g. glue.
According to such an embodiment, the process may further include a step of packaging the micromechanical environmental barrier chip 500 by mounting the micromechanical environmental barrier chip 500 together with a MEMS microphone chip 605 onto a carrier substrate 601, and arranging a package lid 603 on the carrier substrate 601, such that the package lid 603 covers and encloses the micromechanical environmental barrier chip 500 and the MEMS microphone chip 605.
According to a further embodiment, the micromechanical environmental barrier chip 500 may be directly attached to the carrier substrate 601, wherein the MEMS microphone chip 605 is directly attached on top of the micromechanical environmental barrier chip 500, thereby forming a chip stack in which the micromechanical environmental barrier chip 500 is positioned between the MEMS microphone chip 605 and the carrier substrate 601.
According to a further embodiment, the carrier substrate 601 may include a sound port opening 602, wherein the micromechanical environmental barrier chip 500 faces the sound port opening 602, such that the environmental barrier chip 500 is in fluid communication with the sound port opening 602.
According to a further embodiment, the micromechanical environmental barrier chip 500 and the MEMS microphone chip 605 may be provided as two separate discrete components.
Tests and simulations were performed in order to verify the effectiveness of the environmental barrier chip 500.
The environmental barrier structure 220 is arranged above the first cavity 230. The cavity 230 may include a size of y μm. In case of a circular cavity 230, the size is defined as the diameter of the cavity 230.
Depending on the size of the cavity 230, the square grid size of an environmental barrier structure 220 shall be 20 μm or more in order to provide a good SNR while efficiently preventing environmental solid, gaseous and/or moist particles from passing the environmental barrier structure 220.
Summarizing, the herein described innovative concept provides for manufacturing and integration methods for MEMS-based environmental barriers 220. It further provides for a device separation concept for packaging purposes.
Although some aspects have been described in the context of an apparatus, it is clear that these aspects also represent a description of the corresponding method, where a block or device corresponds to a method step or a feature of a method step. Analogously, aspects described in the context of a method step also represent a description of a corresponding block or item or feature of a corresponding apparatus.
While this disclosure has been described with reference to illustrative embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of this disclosure, are contemplated upon reference to the description.
| Number | Date | Country | Kind |
|---|---|---|---|
| 22210912 | Dec 2022 | EP | regional |
