Molded chip fabrication method and apparatus

Abstract
A light emitting diode (LED) is disclosed comprising a plurality of semiconductor layers with a first contact on the bottom surface of the semiconductor layers and a second contact on the top surface of the semiconductor layer. A coating is included that comprises a cured binder and a conversion material that at least partially covers the semiconductor layers, wherein the second contact extends through the coating and is exposed on the same plane as the top surface of the coating. An electrical signal applied to the first and second contacts is conducted through the coating to the semiconductor layers causing the LED to emit light. In other embodiments first and second contacts are accessible from one side of the LED. A coating is included that comprises a cured binder and a conversion material. The coating at least partially covers the semiconductor layers, with the first and second contacts extending through the coating and exposed on the same plane as a surface of the coating. An electrical signal applied to the first and second contacts is conducted through the coating to the semiconductor layers causing the LED to emit light.
Description
BACKGROUND OF THE INVENTION

Field of the Invention


This invention relates to coating of semiconductor devices and more particularly to a method and apparatus for coating light emitting diodes (LEDs) with a matrix material containing one or more light conversion materials.


Description of the Related Art


LEDs are solid-state devices that convert electric energy to light and they generally comprise an active layer of semiconductor material sandwiched between two oppositely doped layers. When a bias is applied across the doped layers, holes and electrons are injected into the active layer where they recombine to generate light that is emitted omnidirectionally from the active layer and from all surfaces of the LED. Recent advances in LEDs (such as Group III nitride based LEDs) have resulted in highly efficient light sources that surpass the efficiency of filament-based light sources, providing light with equal or greater brightness in relation to input power.


One disadvantage of conventional LEDs used for lighting applications is that they cannot generate white light from their active layers. One way to produce white light from conventional LEDs is to combine different wavelengths of light from different LEDs. For example, white light can be produced by combining the light from red, green and blue emitting LEDs, or combining the light from blue and yellow LEDs.


One disadvantage of this approach is that it requires the use of multiple LEDs to produce a single color of light, increasing the overall cost and complexity. The different colors of light are also generated from different types of LEDs fabricated from different material systems. Combining different LED types to form a white lamp can require costly fabrication techniques and can require complex control circuitry since each device may have different electrical requirements and may behave differently under varied operating conditions (e.g. with temperature, current or time).


More recently, the light from a single blue emitting LED has been converted to white light by coating the LED with a yellow phosphor, polymer or dye, with a typical phosphor being cerium-doped yttrium aluminum garnet (Ce:YAG). [See Nichia Corp. white LED, Part No. NSPW300BS, NSPW312BS, etc.; See also U.S. Pat. No. 5,959,316 to Hayden, “Multiple Encapsulation of Phosphor-LED Devices”]. The surrounding phosphor material “downconverts” the wavelength of some of the LED's blue light, changing its color to yellow. For example, if a nitride-based blue emitting LED is surrounded by a yellow phosphor, some of the blue light passes through the phosphor without being changed while a substantial portion of the light is downconverted to yellow. The LED emits both blue and yellow light, which combine to provide a white light.


One conventional method for coating an LED with a phosphor layer utilizes a syringe or nozzle for injecting a phosphor containing epoxy over the LED. One disadvantage of this method is that it is often difficult to control the phosphor layer's geometry and thickness. As a result, light emitting from the LED at different angles can pass through different amounts of conversion material, which can result in an LED with non-uniform color temperature as a function of viewing angle. Another disadvantage of the syringe method is that because the geometry and thickness is hard to control, it is difficult to consistently reproduce LEDs with the same or similar emission characteristics.


Another conventional method for coating an LED is by stencil printing, which is described in European Patent Application EP 1198016 A2 to Lowery. Multiple light emitting semiconductor devices are arranged on a substrate with a desired distance between adjacent LEDs. The stencil is provided having openings that align with the LEDs, with the holes being slightly larger than the LEDs and the stencil being thicker than the LEDs. A stencil is positioned on the substrate with each of the LEDs located within a respective opening in the stencil. A composition is then deposited in the stencil openings, covering the LEDs, with a typical composition being a phosphor in a silicone polymer that can be cured by heat or light. After the holes are filled, the stencil is removed from the substrate and the stenciling composition is cured to a solid state.


One disadvantage of this method is that, like the syringe method above, it can be difficult to control the geometry and layer thickness of the phosphor containing polymer. The stenciling composition may not fully fill the stencil opening such that the resulting layer is not uniform. The phosphor containing composition can also stick to the stencil opening which reduces the amount of composition remaining on the LED. These problems can result in LEDs having non-uniform color temperature and LEDs that are difficult to consistently reproduce with the same or similar emission characteristics.


Another conventional method for coating LEDs with a phosphor utilizes electrophoretic deposition. The conversion material particles are suspended in an electrolyte based solution. A plurality of LEDs are arranged on a conductive substrate that is then almost completely immersed in the electrolyte solution. One electrode from a power source is coupled to the conductive substrate at a location that is not immersed in the solution, and the other electrode is arranged in the electrolyte solution. The bias from the power source is applied across the electrodes, which causes current to pass through the solution to the substrate and its LEDs. This creates an electric field that causes the conversion material to be drawn to the LEDs, covering the LEDs with the conversion material.


One of the disadvantages of this method is that after the LEDs are covered by the conversion material, the substrate is removed from the electrolyte solution so that LEDs and their conversion material can be covered by a protective epoxy. This adds an additional step to the process and the conversion material (phosphor particles) can be disturbed prior to the application of the epoxy. Another disadvantage of this process is that the electric field in the electrolyte solution can vary such that different concentrations of conversion material can be deposited across the LEDs. The conversion particles can also settle in the solution which can also result in different conversion material concentrations across the LEDs. The electrolyte solution can be stirred to prevent settling, but this presents the danger of disturbing the particles already on the LEDs.


SUMMARY OF THE INVENTION

The present invention seeks to provide a method and apparatus for coating semiconductor devices wherein the geometry and thickness of the coating layer can be controlled. The methods and apparatus according to the present invention are particularly adapted to coating light emitting diodes (LEDs) with a controlled layer of “matrix material” having conversion particles. The methods and apparatus are simple and easy to use, and allow for the reproduction of coated semiconductor devices having coating layer geometry and thickness that are substantially the same.


One embodiment of a method for coating a plurality of semiconductor devices according to the present invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a coating material is injected into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured or otherwise treated so that the semiconductor devices are at least partially embedded in the coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the coating material.


Another embodiment of a method according to the present invention is particularly adapted to coating a plurality of light emitting diodes (LEDs) and comprises providing a mold with a formation cavity. A plurality of LEDs are mounted within the mold formation cavity and a matrix material is injected or otherwise introduced into the mold to fill the formation cavity and at least partially cover the LEDs. The matrix material is then cured or otherwise treated so that the LEDs are at least partially embedded in the matrix material. The matrix material with the embedded LEDs is removed from the formation cavity and the embedded LEDs are separated so that each is at least partially covered by a layer of the matrix material.


One embodiment of an apparatus for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a coating material can be injected or otherwise introduced into and fills the formation cavity to at least partially cover the semiconductor devices.


Another embodiment of apparatus according to the present invention is particularly adapted to coating LEDs and comprises a mold housing having a formation cavity arranged to hold a plurality of LEDs. The formation cavity comprising at least a top and bottom surface with the LEDs arranged on the bottom or top surface. The mold housing is also arranged so that a matrix material can be injected into its formation cavity covering the LEDs and filling the formation cavity.


After the coated LEDs are separated according to the present invention, a bias can be applied to each causing light to be emitted omnidirectionally. LED light passes through the layer of matrix material where at least some of it is converted to a different wavelength of light by the conversion particles. The arrangement of the formation cavity and the location of cuts between adjacent LEDs allows for the geometry and thickness of the layer of matrix material on each of the separated LEDs to be controlled such that the light emitting from the LED at different points on its surface passes through essentially the same amount of conversion material. This results in an LED with a more uniform color temperature as a function of viewing angle.


These and other further features and advantages of the invention will be apparent to those skilled in the art from the following detailed description, taken together with the accompanying drawings, in which:





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a flow diagram of one embodiment of a method for coating semiconductor devices according to the present invention;



FIG. 2 is a flow diagram of another embodiment of a method for coating semiconductor devices according to the present invention that is particularly adapted to coating light emitting diodes (LEDs);



FIG. 3 is a sectional view of one embodiment of a coating apparatus according to the present invention;



FIG. 4 is a sectional view of the coating apparatus in FIG. 3, with a matrix material injected into the formation cavity;



FIG. 5 is a sectional view of a sheet of LEDs and matrix material according to the present invention;



FIG. 6 is a sectional view of one embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 5;



FIG. 7 is a sectional view another embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 5;



FIG. 8 is a perspective view of one the LEDs shown in FIG. 7;



FIG. 9 is a sectional view of another embodiment of a coating apparatus according to the present invention for coating square devices;



FIG. 10 is a sectional view of the coating apparatus in FIG. 9, with a matrix material injected into the formation cavity;



FIG. 11 is a sectional view of a sheet of LEDs and matrix material according to the present invention;



FIG. 12 is a sectional view of one embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 11;



FIG. 13 is a sectional view of another coating apparatus according to the present invention;



FIG. 14 is a sectional view of the coating apparatus of FIG. 13 with a matrix material injected into the formation cavity;



FIG. 15 is a sectional view of a sheet of LEDs and matrix material according to the present invention;



FIG. 16 is a sectional view of one embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 11;



FIG. 17 is a sectional view of another embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 11;



FIG. 18 is a perspective view of one of the LEDs shown in FIG. 13.



FIG. 19 is a sectional view of another coating apparatus according to the present invention for coating square devices;



FIG. 20 is a sectional view of the coating apparatus of FIG. 19 with a matrix material injected into the formation cavity;



FIG. 21 is a sectional view of a sheet of LEDs and matrix material according to the present invention; and



FIG. 22 is a sectional view of one embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 21.





DETAILED DESCRIPTION OF THE INVENTION
Coating Methods


FIG. 1 shows one embodiment of a method 10 for coating semiconductor devices according to the present invention and comprises a first step 12 of providing a mold. A preferred mold comprises a formation cavity that is arranged so that semiconductor devices can be held within it and a coating material can be injected or otherwise introduced into it to cover the devices. The cavity can have many different shapes and is preferably defined by at least upper and lower parallel surfaces. In other embodiments the cavity can be further defined by side surfaces running between the upper and lower surfaces. The different shapes of the formation cavity including, but are not limited to, disk, box or lens shaped. The side surfaces can run around the entire edge of the upper and lower surfaces or can be intermittent.


In step 14, semiconductor devices are arranged within the formation cavity and in the preferred method 10, the devices are precisely arranged in a predetermined pattern. The devices can be arranged in many different ways within the formation cavity using many different methods. In a preferred arrangement method the devices are placed on the lower surface by separating the upper surface from the lower and placing the devices using a precision pick and place system. Alternatively, the devices can be placed on the lower surface using a template such as a thin metal foil having a size and shape similar to the lower surface and openings corresponding to desired locations of the semiconductor devices. The foil can be placed on the lower surface and the semiconductor devices can be arranged within the foil openings. After the devices are placed, the foil can be removed. In both methods the upper surface can then be returned over the lower surface after the devices are placed. As further described below, the lateral space between adjacent devices and the space between the upper and lower surfaces provides the desired coating thickness over the semiconductor devices.


In step 16 a coating material is injected or otherwise introduced into the mold's formation cavity, filling the cavity and covering the semiconductor devices. In step 18 the coating material is processed and stabilized resulting in the hardening of the coating material and the semiconductors becoming at least partially embedded in the coating material. A sheet of semiconductor devices and coating material is formed. In a preferred method 10, the coating material is as an epoxy, silicone or other polymer and the preferred processing and stabilizing step 18 includes curing using conventional methods dictated by the coating material's curing schedule. This can include heat curing, optical curing or curing in room temperature. Alternatively, the matrix or coating material may comprise any variety of thermoset, thermoplast, injection molding, or other polymers or related materials.


In step 20, the sheet of semiconductor devices and coating material is removed from the mold's formation cavity for further processing. In step 22 the individual semiconductor devices are separated by cutting through the coating material between devices. This can be accomplished using many different methods such as conventional sawing or dicing, or by using a scribe and break.


As described above, in the preferred step 14 the semiconductor devices are placed on the lower surface with a uniform lateral distance between adjacent devices. The upper and lower surfaces of the formation cavity are also preferably parallel. If similar semiconductor devices having the same height are placed on the lower surface of the formation cavity, the distance between the top of each of the devices and the upper surface should be the same. This results in the thickness of the layer of coating material on the top of each of the devices that is substantially the same. When the devices are separated, the cut is preferably located such that the resulting layer covering the sides of each of the devices has the same thickness. In one embodiment of a method according to the present invention, the cut is equal distance between adjacent devices. This process produces devices that have a nearly uniform layer of coating material and the process can be repeated to produce similar devices. In other embodiments different types of cuts can be made at different angles to change the coating material thickness at different locations over the semiconductor devices.


The method 10 can be used to coat many different types of semiconductor devices, with a preferred device being a solid state light emitter such as a light emitting diode (LED). The preferred coating material in the method for covering LEDs is a “matrix material” that comprises a curable material and one or more light conversion materials (further described below).



FIG. 2 shows a flow diagram for a method 30 according to the present invention that is similar to the method 10, but is used to coat a plurality of LEDs. In step 32 a mold is provided having a formation cavity having at least upper and lower surfaces that are parallel, although the formation cavity can have many different shapes. The mold surfaces are preferably flat and comprise a material which does not adhere strongly to matrix materials or the LED during processing steps such as curing. By not adhering the upper and lower surfaces can be removed from the matrix material and LEDs without damage that could result in a non-uniform layer of matrix material over the LEDs. The upper and lower surfaces can be made of by many different materials and can be provided by sheet metal or glass slides.


To further reduce the danger that the upper and lower surfaces would adhere to the matrix material or LEDs, the surfaces of the formation cavity can also be covered with a coating or film layer that resists adhering to the matrix material and can also withstand heat from processing and curing. The film should be tacky enough on both sides to stick to glass or metal that forms the upper and lower surfaces and to stick to semiconductor materials that form the LEDs. The film should not bond to these materials or the matrix material which allows the semiconductor devices and cured matrix material to be easily separated from the mold surfaces without damage. Many different films can be used with a preferred film being a commercially available tape referred to as Gel-Pak®, provided by Gel-Pak, LLC.


In step 34 the LEDs are placed in a predefined array or pattern within the mold's formation cavity and in a preferred embodiment the film layer is arranged between the LEDs and the cavity's surface. The LEDs are preferably arranged on the lower surface of the formation cavity and can be placed using the same methods as used in step 14 of the method 10 described above.


It is desirable to have sufficient adhesion between the LEDs and the surface of the formation cavity such that underflow of the matrix materials is avoided between the LEDs and surface. Lateral LEDs have contacts on one surface and this surface is typically adjacent to a formation cavity surface (or film layer). Vertical LEDs typically have contacts on opposite surfaces, both of which can be adjacent to a formation cavity surface. It is desirable to avoid matrix material underflow that can cover the contacts so that after processing the LED can be electrically contacted. If underflow occurs, the matrix material must be removed from the contact surface, typically by etching, which can damage the LED and the contacts. One method to improve adhesion and reduce underflow is to apply a small amount of low tack adhesive such as silicone between the LED and the mold surface or film. This additional layer prevents underflow and can also serve as surface protection for the contacts during heat processing steps such as curing. Silicone can be removed by using convention cleaning processes that do not damage the LED or contacts.


In step 36 the matrix material is injected or otherwise introduced into and fills the mold's cavity, covering the LEDs. The matrix material can be made of many different compounds but preferably contains one or more light sensitive conversion materials such as phosphors distributed in an epoxy or silicone binder that can be thermally or optically curable, or cured at room temperature. To achieve uniform LED light emission, the conversion material should be distributed uniformly throughout the epoxy or silicone. For embodiments where it is desirable to emit non-uniform light, the conversion material can be non-uniform in the matrix material such that LED light emitting at different angles passes through different amounts of matrix material. Alternatively, the matrix material may exhibit or contain materials which exhibit a variety of useful properties such as high index of refraction to increase light extraction from the LED.


The following is a list of only some of the phosphors and that can be used alone or in combination as the conversion material, grouped by the re-emitted color that each emits following excitation.


Red


Y2O2S:Eu3+,Bi3+


YVO4:Eu3+,Bi3+


SrS:Eu2+


SrY2S4:Eu2+


CaLa2S4:Ce3+


(Ca,Sr)S:Eu2+


Y2O3:Eu3+,Bi3+


Lu2O3:Eu3+


(Sr2-xLax)(Ce1-xEux)O4


Sr2Ce1-xEuxO4


Sr2-xEuxCeO4


Sr2CeO4


SrTiO3:Pr3+,Ga3+


Orange


SrSiO3:Eu,Bi


Yellow/Green


YBO3:Ce3+,Tb3+


BaMgAl10O17:Eu2+,Mn2+


(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+


ZnS:Cu+,Al3+


LaPO4:Ce,Tb


Ca8Mg(SiO4)4Cl2:Eu2+,Mn2+


((Gd,Y,Lu,Se,La,Sm)3(Al,Ga,In)5O12:Ce3+


((Gd,Y)1-xSmx)3(Al1-yGay)5O12:Ce3+


(Y1-p-q-rGdpCeqSmr)3(Al1-yGay)5O12


Y3 (Al1-sGas)5O12:Ce3+


(Y,Ga,La)3Al5O12:Ce3+


Gd3In5O12:Ce3+


(Gd,Y)3Al5O12:Ce3+,Pr3+


Ba2(Mg,Zn)Si2O7:Eu2+


(Y,Ca,Sr)3(Al,Ga,Si)5(O,S)12


Gd0.46Sr0.31Al1.23OxF1.38:Eu2+0.06


(Ba1-x-ySrxCay)SiO4:Eu


Ba2SiO4:Eu2+


Blue


ZnS:Ag,Al


Combined Yellow/Red


Y3Al5O12:Ce3+,Pr3+


White


SrS:Eu2+,Ce3+,K+


It should be understood that many other phosphors and other materials can be used as the conversion material according to the present invention.


From the list above, the following phosphors are preferred for use as the conversion material based on certain desirable characteristic. Each is excited in the blue and/or UV emission spectrum, provides a desirable peak emission, has efficient light conversion, and has acceptable Stokes shift.


Red


Lu2O3:Eu3+


(Sr2-xLax)(Ce1-xEux)O4


Sr2Ce1-xEuxO4


Sr2-xEuxCeO4


SrTiO3:Pr3+,Ga3+


Yellow/Green


(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+


Ba2(Mg,Zn)Si2O7:Eu2+


Gd0.46Sr0.31Al1.23OxF1.38:Eu2+0.06


(Ba1-x-ySrxCay)SiO4:Eu


Ba2SiO4:Eu2+


To further improve the uniformity of light emission from the covered LED, the matrix material can also include scattering particles to randomly refract the light as it passes through the matrix material. To effectively scatter light, the diameter of the scattering particles should be approximately one half of the wavelength of the light being scattered. Light from the LEDs pass through the particles and is refracted to mix and spread the light. Preferred scattering particles do not substantially absorb LED light and have a substantially different index of refraction than the material in which it is embedded (for example, epoxy). The scattering particles should have as high of an index of refraction as possible. Suitable scattering particles can be made of titanium oxide (TiO2) which has a high index of refraction (n=2.6 to 2.9). Other elements such as small voids or pores could also be used as to scatter the light.


In step 38, the matrix material is cured such that the LEDs are at least partially embedded in the matrix material. In the embodiment where the formation cavity comprises parallel upper and lower surfaces, LEDs and matrix material form a sheet with the LEDs at least partially embedded in the matrix material. The matrix material is allowed to cure by the material's curing schedule either in room temperature, under light for optical curing, or at an elevated temperature for heat curing. In a preferred embodiment of the method 30, all surfaces of the LEDs are covered except for their bottom surface. In step 40 the sheet of LEDs and matrix material is removed from the molds formation cavity, with one method being separating the upper and lower surfaces of the mold to release the sheet, although many other methods can also be used. In step 42, each LED can be singulated, preferably by separating the LEDs in the sheet into individual devices each of which has a similar thickness of matrix material around it. The methods described under step 20 of method 10 can be used, including sawing or dicing or scribe-and-break.


The mold is designed such that the distance between the formation cavity's upper and lower surfaces and the lateral separation between adjacent LEDs results in the desired uniform matrix material thickness on each of the separated LEDs. This results in coated LEDs that emit uniform color temperature and LEDs that can be consistently reproduced with the same or similar emission characteristics.


As more fully described below, depending on the type of LED being coated, the mold can be arranged differently. For lateral devices, where both the positive and negative terminals are on the same LED surface, the LEDs can be arranged with the contacts adjacent to the cavity's lower surface. Spacers can be included between the upper and lower surfaces to maintain the desired distance between the two such that there is a space between the top of the LEDs and the upper surface of the formation cavity. When the cavity is filled with the matrix material, that top surface of each of the LEDs is covered by a layer of matrix material having a similar thickness.


For LEDs having vertical contact geometry, one contact can be on each LED's top surface and the other contact can be on the LED's bottom surface. The top contact terminal should be protected during injection of the matrix material so that it is not covered by the matrix material. In one embodiment, the cavity's upper surface rests on the top surface contacts of the LEDs, with the contact point between the two preventing the top contacts from being fully covered by the injected matrix material.


For each of the above methods, the mold's formation cavity can be provided without a top surface. In those embodiments the matrix should be applied carefully and in a more controlled fashion to provide the desired thickness for the top layer in lateral LEDs and to prevent covering the top contact surface in vertical LEDs.


Coating Apparatus



FIGS. 3 and 4 show one embodiment of a compact coating apparatus 50 according to the present invention that can be used to compact coat many different semiconductor devices, but is particularly adapted to compact coating lateral LEDs with a matrix material. The apparatus 50 includes a mold housing 51 comprising a lower section 52 that includes a bottom rigid support block 54 having LEDs 55 arranged on its top surface. The top surface 56 of the bottom support block 54 is preferably flat and the block 54 can be made of many different materials with many different thicknesses. The block material should not adhere to the LED or matrix material during the curing process. Suitable materials include aluminum, glass and stainless steel, and the bottom support block 54 should be thick enough that it does not flex during the layer formation process.


The LEDs 55 can be placed on the support block using the precision placement methods described above. A double sided adhesive film 58 can also be included between the LEDs 55 and the bottom block's flat surface 56. As described above, the film 58 sticks to the block surface 56 and also provides a tacky surface that holds the LEDs 55. The film 58 also withstands processing and curing steps while not adhering to the matrix material, with a suitable material for film 58 being Gel-Pak® (described above in the method 10 of FIG. 1). The film 58 helps to reduce the amount of matrix material that sticks to the surface of the bottom support block 54. In the embodiment shown with lateral LEDs 55, the positive and negative terminals 59, 60 for each of the LEDs 55 are on the surface of each LED that is adjacent to the first film 58 so that when the matrix material is injected into the mold 50, the positive and negative terminals are not covered by the matrix material.


The mold housing 50 also includes an upper section 61 arranged over the lower section 52. The upper section 61 comprises a top rigid support block 62 that provides a flat top surface 64 and can be made of the same material with the same or different thickness as the bottom rigid support block 54. A second layer of adhesive film 63 can also be included on the flat top surface 64 to provide a surface that does resists adhesion to the matrix material, and withstands the processing and curing steps.


The upper section 61 is arranged over the lower section 52 with the space between the two at least partially defining the mold's formation cavity 68. The space between the two should be large enough to provide a space between the top of the LEDs 55 and the second adhesive film 63. Referring to FIG. 4, a matrix material 70 can be injected or otherwise introduced into the formation cavity 68 such that it fills the space between the upper and lower section 52 and 61 and each of the LEDs is covered by the matrix material 70. The positive and negative terminals 59, 60 are protected from being covered by the matrix material and after the individual LEDs are separated (singulated) the terminals 59, 60 are available for contacting.


During the injection of the matrix material 70 and subsequent processing/curing steps, the distance between the lower and upper sections 52 and 61 should be maintained. The lower and upper sections 52 and 61 can have first and second vertical spacers 65, 66 (shown in FIGS. 3 and 4) running between them. The spacers 65, 66 are arranged to maintain the distance between the lower and upper sections 52 and 61 so that the desired matrix material layer thickness is achieved on the top surface of the LEDs 55. The spacers 65, 66 can be arranged in many different ways and can be formed as a single spacer around the edge of the entire formation cavity 68, or multiple spacers can be used.


The inside surfaces of the spacers 65, 66 further define the formation cavity 68 into which the matrix material 70 is injected. The matrix material 70 can be injected or introduced into the cavity 68 by many different methods according to the present invention. One such method comprises removing the upper section 61, injecting the material 70 into the cavity using a syringe, and replacing the upper section 61. Alternatively, the mold 50 can have an access opening through one of its rigid blocks 54, 62 or through one its spacers 65, 66 so that the matrix material 70 can be injected into the cavity without removing either the lower and upper sections 52, 61 or one of the spacers 65, 66. The matrix material 70 can be made of the same material as described in step 36 of the method 30 above and preferably comprises phosphor conversion particles of one or more different type distributed uniformly throughout a curable epoxy, silicone or other polymer.


After the matrix material 70 is injected into the formation cavity 68, the matrix material 70 is cured using a process dictated by the type of epoxy or silicone such as heat curing, light curing or room temperature cooling. After the curing process is complete the matrix material 70 and LEDs 55 form a sheet that can be removed from the mold's formation cavity 68 by removing one or both of the lower and upper sections 52, 61, and/or one or both of the spacers 65, 66.



FIG. 5 shows a sheet 72 of matrix material 70 and LEDs 55 after it is removed from the formation cavity 68 of the mold apparatus 50. The sheet can now be separated into individual coated LEDs by sawing, dicing or using a scribe and break.



FIG. 6 shows two coated LEDs 76 separated from the sheet 72 shown in FIG. 5. In the embodiment shown, each of the coated LEDs 76 is separated by making vertical cuts through the matrix material between adjacent LEDs 55. The matrix material can be cut in many different ways such that the layer has different thickness over the LEDs 55 or different LEDs 55 cut from the same sheets can have layers with different thicknesses. The coated LEDs 76 shown in FIG. 6 are cube shaped and the matrix material cut is preferably made at a midpoint between adjacent LEDs 55 so that the side thickness of the matrix material on each coated LED 76 is the same. In other embodiments the cut can be made off midpoint or two cuts can be made, each of which is off midpoint but closer to one of the adjacent LEDs 55 such that the side thickness of the matrix material is still the same for each LED. This type of cubed shaped arrangement is particularly applicable to LEDs that are square, although it can also be used with LEDs having angled surfaces as shown.


For different shaped LEDs, the matrix material can also be cut so that the matrix material layer conforms to the shape of the LED. FIGS. 7 and 8 show individually coated angled side surface coated LEDs 79 that have a layer of matrix material 80 that more closely conforms to the shape of each LED 55. Angled side surfaces are typically included to increase the LEDs light extraction. The shape of the matrix layer 80 can be obtained using different methods, with a preferred method being cutting through the matrix material to a depth 84 using a wider sawing (dicing) blade having an angled point. The remainder of the matrix material can then be cut using a standard narrow sawing (dicing) blade. The layer 80 conforms more closely to the shape of the LED such that light emitting from the LED 55 passes through substantially the same amount of matrix material. Accordingly, light emitted from the coated LED 79 is more uniform and total internal reflection is reduced. Each of the coated LEDs 79 have both contacts on the bottom, uncoated surface 86 and FIG. 8 also shows first and second conductors 88, 89 that can be used to apply a bias across the contacts, causing the LED 55 to emit light.



FIGS. 9 and 10 show another embodiment of a compact coating apparatus 90 according to the present invention that comprises many of the same features as the apparatus 50 shown in FIGS. 3 and 4, with the apparatus 90 used to coat square LEDs 92. The features of the apparatus 90 that are the same as those in the apparatus 50 use the same reference numerals in FIGS. 9 and 10. Accordingly, the reference numerals and many of the corresponding features are not introduced or described again in the referring to FIGS. 9 and 10.


Like the LEDs 55 in FIGS. 3 and 4, the square LEDs 92 are arranged on either the top surface 56 of the support block 54, or in the embodiment shown with a first film 58, on the top surface of the adhesive film 58 such that portions of the film are sandwiched between the LEDs 92 and the support block 54. The LEDs 92 have bottom contacts 93 whose top surface is protected by the block 54 or film 58 from being covered by the matrix material. Referring to FIG. 10, a matrix material 94 can be injected into the formation cavity 68 covering the LEDs 92 and the matrix material 94 can be cured such that the LEDs 92 become embedded in the matrix material 94.



FIG. 11 shows the sheet 96 of LEDs 92 and matrix material 94 after being removed from the formation cavity by the methods described during the discussion of FIGS. 4 and 5 above. FIG. 12 shows the individual coated LEDs 98 after being separated from the sheet 96 using the separation methods described above, with each of the square LEDs 92 having a nearly uniform layer of matrix material 94 so that the coated LEDs 98 emit similar light.



FIG. 13 shows another embodiment of a mold apparatus 100 that can also be used to compact coat different semiconductor devices, but is particularly adapted to coating semiconductor devices that have a contact on their top surface. One such device is a vertical LED 102 having a first contact 103 on its bottom surface and a second contact 104 on its top surface. The apparatus 100 comprises a mold housing 101 including a lower section 106 that is similar to the lower section 54 described in FIG. 3, and comprises a bottom support block 108 and a first double sided adhesive film 110 (e.g. Gel-Pak®). Vertical LEDs 102 are arranged on the layer 110 with their first contact 103 adjacent to the layer 110.


The apparatus 100 also comprises an upper section 112 that is similar to the upper section 61 described in FIGS. 3 and 4, and comprises a top rigid block 114 and a second double sided adhesive film 116. However, in apparatus 100 there are no spacers. Instead, the second adhesive film 116 rests on the second contacts 104 of the LEDs 102, which maintains the appropriate distance between the lower and upper sections 106, 112 and also protects the top of the contacts 104 from being covered by the matrix material. If desired, the apparatus 100 can include side surfaces (not shown) to further define the formation cavity 119.



FIG. 14 shows the apparatus 100 with the matrix material 118 injected or otherwise introduced between the lower and upper sections 106, 112, that at least partially define a formation cavity 119. The matrix material 118 can then be cured using the processes described above, so that the LEDs 102 and matrix material 118 form a sheet 120. The first contact 103 of each LED 102 is protected from being covered by the matrix material 118 by the first adhesive film 110 and second contact 104 is protected from being fully covered by the matrix material by the second adhesive film 116. Accordingly, both the first and second contacts 103, 104 are available for electrical contact without further processing or etching.



FIG. 15 shows the sheet 120 after it has been removed from the apparatus 100. FIG. 16 shows individual coated LEDs 122 after they have been separated, with the preferred separation method being vertical cuts through the matrix material between adjacent LEDs 102 to form cube shaped devices. FIG. 17 show LEDs 123 after being cut to match the angled sides of the LEDs 92. This can be accomplished using the two cut method described above wherein a wider saw with and angled blade is used to cut the matrix material to a first depth 124 and a standard narrower blade is used to cut through the remainder of the matrix material. FIG. 18 shows the second contact 104 available for contacting with a first conductor 128 coupled to the second contact 104. A bottom conductor 129 is coupled to the LED's first contact 103 (shown in FIG. 17). A bias applied across conductors 128 and 129 causes the coated LED 102 to emit light.



FIGS. 19 and 20 show another embodiment of a compact coating apparatus 130 according to the present invention that comprises many of the same features as the apparatus 100 shown in FIGS. 13 and 14, with the apparatus 130 used to coat square LEDs 132. The features of the apparatus 130 in FIGS. 19 and 20 that are the same as those in the apparatus 100 in FIGS. 13 and 14 use the same reference numerals for the same features. Accordingly, the reference numerals and many of the corresponding features are not introduced or described again in the referring to FIGS. 19 and 20.


Like the LEDs 102 in FIGS. 13 and 14, the square LEDs 132 have a first contact 133 and a second contact 134 and the LEDs 132 are arranged on either the top surface of the block 108, or in the embodiment shown with a first film 110, on the top surface of the adhesive film 110. Portions of the film 110 are sandwiched between the LEDs 132 and the block 108, with their first contacts 133 protected. The upper section 112 is arranged on the LEDs second contacts 134 such that they are also protected.


Referring to FIG. 20, a matrix material 136 can be injected or otherwise introduced into the formation cavity covering the LEDs 132 and the matrix material 136 can be cured such that the LEDs 132 become embedded in the matrix material 136.



FIG. 21 shows the sheet 138 of LEDs 132 and matrix material 136 after being removed from the formation cavity by the methods described in the discussion of FIGS. 4 and 5 above. FIG. 22 shows the individual coated LEDs 139 after being separated from the sheet 138 using the methods described above in the discussion of FIGS. 6, 7 and 8. Each of the square LEDs 132 has a similar layer of matrix material 136 so that the LEDs 132 emit similar light.


Each of the apparatus described above can include a small amount of low tack adhesive such as silicone between the LED contacts and the mold surface or film as described in the method 10 of FIG. 1. As described above, this additional layer prevents underflow and can also serve as surface protection for the contacts during heat processing steps such as curing. Silicone can then be removed by using convention cleaning processes that do not damage the LED or contacts.


Although the present invention has been described in considerable detail with reference to certain preferred configurations thereof, other versions are possible. Different curable materials and light conversion particles can be used. The molds can take different shapes, can have different components and the semiconductor devices can be arranged differently in the mold's formation cavity. The individual LEDs can be separated from the sheet using many different sawing or dicing methods, with the cuts being straight or angled through the matrix material. The different coating apparatus described above can be provided without an upper section and in those embodiments the matrix material should be introduced in a careful and controlled manner to provide the desired layer of matrix material. Therefore, the spirit and scope of the appended claims should not be limited to their preferred versions contained therein.

Claims
  • 1. A light emitting diode (LED) comprising: a plurality of semiconductor layers defining a structure having a first surface, a second surface opposite the first surface, and at least one angled side;a top contact coupled to the first surface;a bottom contact coupled to the second surface; anda coating layer comprising a cured binder and a conversion material, wherein the coating layer covers all of the at least one angled side and further covers a side surface of the top contact and a side surface of the bottom contact, wherein the surface of the coating layer adjacent to said top contact is planar and not above said top contact, wherein none of the coating layer is over the first surface of the structure;in which a top surface of the top contact is exposed along a top surface of said LED and a bottom surface of the bottom contact is exposed along a bottom surface of the LED.
  • 2. The LED of claim 1, wherein said coating layer comprises a phosphor loaded binder.
  • 3. The LED of claim 2, wherein said conversion material is distributed in a substantially uniform manner in said binder.
  • 4. The LED of claim 1, wherein said coating layer further comprises scattering particles.
  • 5. The LED of claim 1, wherein said coating layer is formed over said semiconductor layers in a mold formation cavity.
  • 6. The LED of claim 1, wherein said semiconductor layers are coated simultaneously with other similar LEDs.
  • 7. The LED of claim 6, wherein said semiconductor layers are separated from the others in similar LEDs that are simultaneously coated.
  • 8. The LED of claim 1, wherein said bottom contact is in electrical contact with said semiconductor layers such that an electrical bias applied across said top and bottom contacts causes said LED to emit light.
  • 9. The LED of claim 1, wherein said coating layer comprises a planar top surface, wherein said top contact is exposed in the same plane as said planar top surface.
  • 10. The LED of claim 1, wherein the top contact is accessible from the top surface of said coating layer.
  • 11. The LED of claim 1, wherein the bottom contact is accessible from the bottom surface of said coating layer.
  • 12. A light emitting diode (LED) comprising: a plurality of semiconductor layers defining a structure having a bottom surface, a top surface opposite the bottom surface, and one or more angled sides;a first contact on the bottom surface of the structure.a second contact on the top surface of the structure; anda coating comprising a cured binder and a conversion material, wherein the coating layer covers all of the one or more angled sides and further covers a side surface of the first contact and a side surface of the second contact, wherein said first contact extends through said coating layer and is exposed as a bottom surface of the LED, said second contact extends through said coating layer and is exposed as a top surface of said LED, wherein said coating layer is planar adjacent to said first contact and is substantially cube shaped; and wherein none of the coating layer is over the top surface of the structure.
  • 13. The LED of claim 12, wherein said conversion material is distributed in a substantially uniform manner in said binder.
  • 14. The LED of claim 12, wherein said coating layer is formed over said semiconductor layers in a mold formation cavity.
  • 15. The LED of claim 12, emitting a white light combination of light from the conversion material and semiconductor layers.
  • 16. The LED of claim 12, wherein the second contact is accessible from the top surface of said coating layer.
  • 17. The LED of claim 12, wherein the first contact is accessible from the bottom surface of said coating layer.
  • 18. The LED of claim 12, wherein said coating layer is cube shaped.
  • 19. A light emitting diode (LED), comprising: a plurality of semiconductor layers defining a structure having a bottom surface, a top surface opposite the bottom surface, and at least one angled side;a top contact on the plurality of semiconductor layers;a bottom contact opposite said top contact; anda coating layer comprising a cured binder and a conversion material, such that the coating layer covers all of the at least one angled side and further covers a side surface of the top contact and a side surface of the bottom contact, in which said top contact extends through said coating layer such that the coating layer is absent from an exposed surface of the top contact, wherein the surface of the coating layer adjacent said top contact is planar and the surface of the coating covering said angled side is planar;wherein light emitting from said LED passes through substantially the same thickness of said coating layer; and wherein none of the coating layer is over the top surface of the structure.
  • 20. The LED of claim 19, wherein said coating layer comprises a phosphor loaded binder.
  • 21. The LED of claim 19, wherein said conversion material is distributed in a substantially uniform manner in said binder.
  • 22. The LED of claim 19, wherein said coating layer further comprises scattering particles.
  • 23. The LED of claim 19, wherein said bottom contact is in electrical contact with said semiconductor layers such that an electrical signal applied across said top and bottom contacts causes said LED to emit light.
  • 24. The LED of claim 23, wherein said bottom contact extends through said coating layer and is exposed at the bottom surface of said coating.
  • 25. The LED of claim 19, wherein the top contact is accessible from the planar top surface of said coating layer.
  • 26. The LED of claim 19, wherein the bottom contact is accessible from the planar bottom surface of said coating layer.
  • 27. The LED of claim 19, wherein said coating layer comprises an angled side and a vertical side of substantially equal thickness.
  • 28. A light emitting diode (LED), comprising: a plurality of semiconductor layers defining a structure having a bottom surface, a top surface opposite the bottom surface, and one or more angled sides;a top contact coupled to the plurality of semiconductor layers;a bottom contact coupled to the plurality of semiconductor layers opposite said top contact;a conformal coat layer of matrix material comprising a cured binder and a conversion material, wherein the conformal coat layer covers all of the one or more angled sides and further covers a side surface of the top contact and a side surface of the bottom contact, in which the top contact extends through the conformal coat layer such that the conformal coat layer is absent from an exposed surface of the top contact and such that none of the conformal coat layer is over the top surface of the structure, wherein the surface of the coating layer covering the side surface of said top contact is planar and not above said top contact.
  • 29. The LED of claim 28, wherein said matrix material comprises a phosphor loaded binder.
  • 30. The LED of claim 29, wherein said matrix material is distributed in a substantially uniform manner.
  • 31. The LED of claim 28, wherein said coat layer further comprises scattering particles.
  • 32. The LED of claim 28, wherein said coat layer is formed over said semiconductor layers in a mold formation cavity.
  • 33. The LED of claim 28, wherein said semiconductor layers are coated simultaneously with other similar LEDs.
  • 34. The LED of claim 33, wherein said semiconductor layers are separated from the others in similar LEDs that are simultaneously coated.
  • 35. The LED of claim 28, wherein said top contact extends to the same height as the top surface of said coat layer on said semiconductor layers.
  • 36. The LED of claim 28, wherein said bottom contact is in electrical contact with said semiconductor layers such that an electrical bias applied across said top and bottom contacts causes said LED to emit light.
  • 37. The LED of claim 28, wherein said coat layer comprises a planar top surface, wherein said top contact is exposed in the same plane as said top surface.
  • 38. The LED of claim 28, wherein the top contact is accessible from the top surface of said coat layer.
  • 39. The LED of claim 28, wherein the bottom contact is accessible from the bottom surface of said coat layer.
Parent Case Info

This application is a continuation of and claims the benefit of U.S. patent application Ser. No. 10/666,399 to Leung et al., filed on Sep. 18, 2003.

US Referenced Citations (221)
Number Name Date Kind
3780357 Haitz Dec 1973 A
4576796 McCormick Mar 1986 A
4733335 Serizawa et al. Mar 1988 A
4918497 Edmond Apr 1990 A
4935665 Murata Jun 1990 A
4946547 Palmour et al. Aug 1990 A
4966862 Edmond Oct 1990 A
5027168 Edmond Jun 1991 A
5200022 Kong et al. Apr 1993 A
5210051 Carter, Jr. May 1993 A
5277840 Osaka et al. Jan 1994 A
5338944 Edmond et al. Aug 1994 A
RE34861 Davis et al. Feb 1995 E
5393993 Edmond et al. Feb 1995 A
5416342 Edmond et al. May 1995 A
5475241 Harrah et al. Dec 1995 A
5523589 Edmond et al. Jun 1996 A
5604135 Edmond et al. Feb 1997 A
5614131 Mukerji et al. Mar 1997 A
5631190 Negley May 1997 A
5739554 Edmond et al. Apr 1998 A
5766987 Mitchell et al. Jun 1998 A
5813753 Vriens et al. Sep 1998 A
5849354 Tsuchiyama Dec 1998 A
5858278 Itoh et al. Jan 1999 A
5912477 Negley Jun 1999 A
5923053 Jakowetz et al. Jul 1999 A
5936264 Ishinaga Aug 1999 A
5959316 Lowery Sep 1999 A
5988925 Baggett Nov 1999 A
6001671 Fjelstad Dec 1999 A
6056421 Johnson et al. May 2000 A
6066861 Hohn et al. May 2000 A
6069440 Shimizu et al. May 2000 A
6087202 Exposito et al. Jul 2000 A
6120600 Edmond et al. Sep 2000 A
6132072 Turnbull et al. Oct 2000 A
6139304 Centofante Oct 2000 A
6153448 Takahashi et al. Nov 2000 A
6157086 Weber Dec 2000 A
6187606 Edmond et al. Feb 2001 B1
6201262 Edmond et al. Mar 2001 B1
6245259 Hohn et al. Jun 2001 B1
6252254 Soules et al. Jun 2001 B1
6257737 Marshall et al. Jul 2001 B1
6274890 Oshio et al. Aug 2001 B1
6329224 Nguyen et al. Dec 2001 B1
6331063 Kamada et al. Dec 2001 B1
6333522 Inoue et al. Dec 2001 B1
6338813 Hsu et al. Jan 2002 B1
6366018 Zalmanovich Apr 2002 B1
6376277 Corisis Apr 2002 B2
6404125 Garbuzov et al. Jun 2002 B1
6468832 Mostafazadeh Oct 2002 B1
6501100 Srivastava Dec 2002 B1
6504180 Heremans et al. Jan 2003 B1
6522065 Srivastava Feb 2003 B1
6531328 Chen Mar 2003 B1
6580097 Soules et al. Jun 2003 B1
6583444 Fjelstad Jun 2003 B2
6624058 Kazama Sep 2003 B1
6635263 Tanida et al. Oct 2003 B2
6642652 Collins, III et al. Nov 2003 B2
6650044 Lowery Nov 2003 B1
6653765 Levinson et al. Nov 2003 B1
6664560 Emerson et al. Dec 2003 B2
6666567 Feldman et al. Dec 2003 B1
6686676 McNulty Feb 2004 B2
6733711 Durocher et al. May 2004 B2
6734033 Emerson et al. May 2004 B2
6759266 Hoffman Jul 2004 B1
6759723 Silverbrook Jul 2004 B2
6791119 Slater, Jr. et al. Sep 2004 B2
6791259 Stokes Sep 2004 B1
6793371 Lamke et al. Sep 2004 B2
6812500 Reeh et al. Nov 2004 B2
6849881 Volker et al. Feb 2005 B1
6853010 Slater, Jr. et al. Feb 2005 B2
6860621 Bachl et al. Mar 2005 B2
6919683 Jang Jul 2005 B1
6924233 Chua et al. Aug 2005 B1
6936862 Chang et al. Aug 2005 B1
6939481 Srivastava Sep 2005 B2
6958497 Emerson et al. Oct 2005 B2
6967116 Negley Nov 2005 B2
7023019 Maeda Apr 2006 B2
7029935 Negley et al. Apr 2006 B2
7042020 Negley May 2006 B2
7049159 Lowery May 2006 B2
7078737 Yuri Jul 2006 B2
7160012 Hilscher et al. Jan 2007 B2
7183586 Ichihara Feb 2007 B2
7183587 Negley et al. Feb 2007 B2
7202598 Juestel et al. Apr 2007 B2
7246923 Conner Jul 2007 B2
7250715 Mueller et al. Jul 2007 B2
7259402 Edmond et al. Aug 2007 B2
7286296 Chaves et al. Oct 2007 B2
7446343 Mueller et al. Nov 2008 B2
7566639 Kohda Jul 2009 B2
7601550 Bogner Oct 2009 B2
8610145 Yano Dec 2013 B2
20010000622 Reeh et al. May 2001 A1
20010007484 Sakamaki Jul 2001 A1
20010015442 Kondoh et al. Aug 2001 A1
20010019177 Sugihara Sep 2001 A1
20010038166 Weber Nov 2001 A1
20020001869 Fjelstad Jan 2002 A1
20020006040 Kamada et al. Jan 2002 A1
20020024299 Okazaki Feb 2002 A1
20020028527 Maeda et al. Mar 2002 A1
20020048905 Ikegami et al. Apr 2002 A1
20020056847 Uemura May 2002 A1
20020063520 Yu et al. May 2002 A1
20020070449 Yagi et al. Jun 2002 A1
20020088985 Komoto et al. Jul 2002 A1
20020096789 Bolken Jul 2002 A1
20020105266 Juestel et al. Aug 2002 A1
20020123164 Slater, Jr. et al. Sep 2002 A1
20020158578 Eliashevich et al. Oct 2002 A1
20020185965 Collins, III et al. Dec 2002 A1
20020195935 Jager et al. Dec 2002 A1
20030006418 Emerson et al. Jan 2003 A1
20030066311 Li et al. Apr 2003 A1
20030079989 Klocke et al. May 2003 A1
20030121511 Hashimura Jul 2003 A1
20030160258 Oohata Aug 2003 A1
20030181122 Collins et al. Sep 2003 A1
20030207500 Pichler et al. Nov 2003 A1
20040004435 Hsu Jan 2004 A1
20040012958 Hashimoto et al. Jan 2004 A1
20040031952 Oosedo et al. Feb 2004 A1
20040037949 Wright Feb 2004 A1
20040038442 Kinsman Feb 2004 A1
20040041159 Yuri et al. Mar 2004 A1
20040041222 Loh Mar 2004 A1
20040056260 Slater et al. Mar 2004 A1
20040061115 Kozawa et al. Apr 2004 A1
20040061433 Izuno et al. Apr 2004 A1
20040106234 Sorg et al. Jun 2004 A1
20040124429 Stokes Jul 2004 A1
20040140765 Takekuma et al. Jul 2004 A1
20040164307 Mueller-Mach et al. Aug 2004 A1
20040164311 Uemura Aug 2004 A1
20040169181 Yoo Sep 2004 A1
20040170018 Nawashiro Sep 2004 A1
20040173806 Chua Sep 2004 A1
20040180475 Shibata et al. Sep 2004 A1
20040188697 Brunner et al. Sep 2004 A1
20040188698 Hsing et al. Sep 2004 A1
20040245530 Kameyama Dec 2004 A1
20040256974 Mueller_Mach et al. Dec 2004 A1
20040263073 Baroky et al. Dec 2004 A1
20050001225 Yoshimura et al. Jan 2005 A1
20050002168 Narhi et al. Jan 2005 A1
20050021191 Taniguchi et al. Jan 2005 A1
20050062140 Leung et al. Mar 2005 A1
20050080193 Wouters et al. Apr 2005 A1
20050122031 Itai Jun 2005 A1
20050145991 Sakamoto et al. Jul 2005 A1
20050167682 Fukasawa Aug 2005 A1
20050184305 Ueda Aug 2005 A1
20050184638 Mueller Aug 2005 A1
20050194606 Oohata Sep 2005 A1
20050196886 Jager et al. Sep 2005 A1
20050219835 Nagayama Oct 2005 A1
20050221519 Leung et al. Oct 2005 A1
20050243237 Sasuga Nov 2005 A1
20050259423 Heuser et al. Nov 2005 A1
20050265404 Ashdown Dec 2005 A1
20050269592 Lee et al. Dec 2005 A1
20060001046 Batres et al. Jan 2006 A1
20060001466 Batres et al. Jan 2006 A1
20060003477 Braune Jan 2006 A1
20060007207 Kawaguchi Jan 2006 A1
20060027820 Cao Feb 2006 A1
20060060867 Suehiro Mar 2006 A1
20060060872 Edmond et al. Mar 2006 A1
20060060874 Edmond et al. Mar 2006 A1
20060060879 Edmond et al. Mar 2006 A1
20060065906 Harada Mar 2006 A1
20060091788 Yan May 2006 A1
20060102991 Sakano May 2006 A1
20060118510 Hamre et al. Jun 2006 A1
20060124947 Mueller et al. Jun 2006 A1
20060138937 Ibbetson Jun 2006 A1
20060145170 Cho Jul 2006 A1
20060157721 Tran et al. Jul 2006 A1
20060189098 Edmond Aug 2006 A1
20060202105 Krames et al. Sep 2006 A1
20060267042 Izuno Nov 2006 A1
20060284195 Nagai Dec 2006 A1
20070012940 Suh et al. Jan 2007 A1
20070034995 Kameyama Feb 2007 A1
20070037307 Donofrio Feb 2007 A1
20070092636 Thompson et al. Apr 2007 A1
20070096131 Chandra May 2007 A1
20070114559 Sayers et al. May 2007 A1
20070138941 Jin et al. Jun 2007 A1
20070158668 Tarsa et al. Jul 2007 A1
20070158669 Lee et al. Jul 2007 A1
20070215890 Harbers Sep 2007 A1
20070259206 Oshio Nov 2007 A1
20070278502 Shakuda et al. Dec 2007 A1
20080006815 Wang et al. Jan 2008 A1
20080106893 Johnson et al. May 2008 A1
20080149455 Nagai Jun 2008 A1
20080173884 Chitnis et al. Jul 2008 A1
20080203410 Brunner et al. Aug 2008 A1
20080283865 Yoo Nov 2008 A1
20090057690 Chakraborty Mar 2009 A1
20090086492 Meyer Apr 2009 A1
20090101930 Li Apr 2009 A1
20090116217 Teng May 2009 A1
20090154195 Ishii et al. Jun 2009 A1
20090268461 Deak et al. Oct 2009 A1
20090322197 Helbing Dec 2009 A1
20100213808 Shi Aug 2010 A1
20110037084 Sekii Feb 2011 A1
20110050098 Lenk Mar 2011 A1
20120043886 Ji et al. Feb 2012 A1
Foreign Referenced Citations (163)
Number Date Country
2310925 Mar 1999 CN
2310925 Mar 1999 CN
1372330 Oct 2002 CN
1455960 Nov 2003 CN
1476050 Feb 2004 CN
1547265 Nov 2004 CN
1866561 Nov 2006 CN
19638667 Apr 1998 DE
19945672 Apr 2000 DE
69702929 Feb 2001 DE
102005000800 Aug 2005 DE
102005013265 Dec 2005 DE
102005042814 Apr 2006 DE
102005062514 Mar 2007 DE
102005058127 Jun 2007 DE
102007022090 Nov 2008 DE
0732740 Sep 1996 EP
1017112 Jul 2000 EP
1 059 678 Dec 2000 EP
1059678 Dec 2000 EP
1 138 747 Oct 2001 EP
1138747 Oct 2001 EP
1198016 Oct 2001 EP
198016 Apr 2002 EP
1198005 Apr 2002 EP
1198005 Apr 2002 EP
1367655 Mar 2003 EP
1367655 Dec 2003 EP
1385215 Jan 2004 EP
1395215 Jan 2004 EP
1601030 Nov 2005 EP
1724848 Nov 2006 EP
1724848 Nov 2006 EP
1724848 Nov 2006 EP
1804304 Apr 2007 EP
1935452 Jun 2008 EP
2704690 Nov 1994 FR
61048951 Mar 1986 JP
59027559 Feb 1987 JP
02-086150 Mar 1990 JP
402086150 Mar 1990 JP
4233454 Aug 1992 JP
10107325 Apr 1998 JP
H10107325 Apr 1998 JP
10-163525 Jun 1998 JP
10163525 Jun 1998 JP
10163525 Jun 1998 JP
10247750 Sep 1998 JP
10261821 Sep 1998 JP
H0261821 Sep 1998 JP
11087778 Mar 1999 JP
11276932 Oct 1999 JP
2002101147 Apr 2000 JP
2000-164937 Jun 2000 JP
2000164930 Jun 2000 JP
2000164937 Jun 2000 JP
2001649370 Jun 2000 JP
2000208820 Jul 2000 JP
2000208820 Jul 2000 JP
2002208822 Jul 2000 JP
2000243728 Aug 2000 JP
2000277551 Oct 2000 JP
2000-349346 Dec 2000 JP
2000349346 Dec 2000 JP
2001308116 Nov 2001 JP
2001345480 Dec 2001 JP
2002009097 Jan 2002 JP
2002-050799 Feb 2002 JP
2002-50799 Feb 2002 JP
2002-050799 Feb 2002 JP
200250799 Feb 2002 JP
2002050799 Feb 2002 JP
2002-076446 Mar 2002 JP
2002076445 Mar 2002 JP
2002-118293 Apr 2002 JP
2002118293 Apr 2002 JP
2002118293 Apr 2002 JP
2002-531955 Sep 2002 JP
2002-531956 Sep 2002 JP
2002161325 Sep 2002 JP
2002261325 Sep 2002 JP
2002280607 Sep 2002 JP
2002319704 Oct 2002 JP
2002374006 Dec 2002 JP
2003-007929 Jan 2003 JP
20037929 Jan 2003 JP
2003007929 Jan 2003 JP
2003046141 Feb 2003 JP
2003-115614 Apr 2003 JP
2003110153 Apr 2003 JP
2003115614 Apr 2003 JP
2003-170465 Jun 2003 JP
2003-197655 Jul 2003 JP
2003224307 Aug 2003 JP
2003234511 Aug 2003 JP
2003-526212 Sep 2003 JP
2003-318448 Nov 2003 JP
2003-533852 Nov 2003 JP
2004-031856 Jan 2004 JP
2004-501512 Jan 2004 JP
2004031856 Jan 2004 JP
2004095765 Mar 2004 JP
2004134699 Apr 2004 JP
2004186488 Jul 2004 JP
2004-266240 Sep 2004 JP
2004266240 Sep 2004 JP
3589187 Nov 2004 JP
2004-363342 Dec 2004 JP
2004363342 Dec 2004 JP
2005005604 Jan 2005 JP
2005019838 Jan 2005 JP
2005033138 Feb 2005 JP
2005064113 Mar 2005 JP
2005167079 Jun 2005 JP
2005-252222 Sep 2005 JP
2005252222 Sep 2005 JP
2005298817 Oct 2005 JP
2006032387 Feb 2006 JP
2006054209 Feb 2006 JP
20060495533 Feb 2006 JP
2006080565 Mar 2006 JP
2006114637 Apr 2006 JP
2006165416 Jun 2006 JP
2006245020 Jun 2006 JP
2006-245020 Sep 2006 JP
2006-253370 Sep 2006 JP
2006253370 Sep 2006 JP
2006313886 Nov 2006 JP
2007063538 Mar 2007 JP
2008-129043 Jun 2008 JP
2008532281 Aug 2008 JP
2008-218511 Sep 2008 JP
2000-299334 Oct 2010 JP
200412776 Feb 2004 KR
2004-0017926 Mar 2004 KR
200417926 Mar 2004 KR
200429313 Apr 2004 KR
522423 Mar 2003 TW
581325 Mar 2004 TW
595012 Jun 2004 TW
WO 0033390 Jun 2000 WO
WO 0124283 Apr 2001 WO
WO 0124283 Apr 2001 WO
WO 02061847 Aug 2002 WO
WO 02061847 Aug 2002 WO
WO 03001612 Jan 2003 WO
WO 03021668 Mar 2003 WO
WO 03021691 Mar 2003 WO
WO 2004020704 Mar 2004 WO
WO 2005101445 Oct 2005 WO
WO 2005101909 Oct 2005 WO
WO 2005121641 Dec 2005 WO
WO 2006033695 Mar 2006 WO
WO 2006036251 Apr 2006 WO
WO 2006065015 Jun 2006 WO
WO 2006135496 Dec 2006 WO
WO 2002018560 Feb 2007 WO
WO 2007107903 Sep 2007 WO
WO 2007136956 Nov 2007 WO
WO 2008003176 Jan 2008 WO
WO 2009060356 May 2009 WO
WO 2009093163 Jul 2009 WO
WO 2010035171 Apr 2010 WO
Non-Patent Literature Citations (273)
Entry
Office Action from related U.S. Appl. No. 11/982,276, dated Dec. 7, 2009.
Office Action from related U.S. Appl. No. 12/077,638, dated Dec. 8, 2009.
Office Action from related U.S. Appl. No. 11/656,759, dated Nov. 25, 2009.
Office Action from related U.S. Appl. No. 11/398,214, dated Dec. 11, 2009.
Office Action from related U.S. Appl. No. 10/666.399, dated Dec. 22, 2009.
Office Action from related U.S. Appl. No. 11/881,683, dated Feb. 5, 2010.
Office Action from related U.S. Appl. No. 12/008,477, dated Mar. 1, 2010.
From related application. Japanese Patent Application No. 2006-526964, Official Notice of Rejection, dated Feb. 16, 2010.
Patent Abstracts of Japan, Publication No. 2003-258011 dated Sep. 12, 2003.
Patent Abstracts of Japan, Publication No. 2002-093830 dated Mar. 29, 2002.
Office Action from related U.S. Appl. No. 10/666,399, dated Nov. 18, 2004.
Response to related Office Action U.S. Appl. No. 10/666,399, dated Mar. 18, 2005.
Office Action from related U.S. Appl. No. 10/666,399, dated May 13, 2005.
Response to related Office Action U.S. Appl. No. 10/666,399, dated Aug. 15, 2005.
Office Action from related U.S. Appl. No. 10/666,399, dated Sep. 30, 2005.
Response to related Office Action U.S. Appl. No. 10/666,399, dated Jun. 30, 2006.
Office Action from related U.S. Appl. No. 10/666,399, dated Feb. 28, 2006.
Response to related Office Action U.S. Appl. No. 10/666,399, dated Jun. 28, 2006.
Office Action from related U.S. Appl. No. 10/666,399, dated Aug. 30, 2006.
Response to related Office Action U.S. Appl. No. 10/666,399, dated Nov. 30, 2006.
Office Action from related U.S. Appl. No. 10/666,399, dated Feb. 14, 2007.
Response to related Office Action U.S. Appl. No. 10/666,399, dated Jun. 18, 2007.
Office Action from related U.S. Appl. No. 10/666,399, dated Jul. 19, 2007.
Response to related Office Action U.S. Appl. No. 10/666,399, dated Jan. 22, 2008.
Office Action from related U.S. Appl. No. 10/666,399, dated Sep. 5, 2008.
Response to related Office Action U.S. Appl. No. 10/666,399, dated Feb. 5, 2009.
Office Action from related U.S. Appl. No. 10/666,399, dated Mar. 6, 2009.
Response to related Office Action U.S. Appl. No. 10/666,399, dated Mar. 22, 2010.
International Search Report and Written Opinion from related PCT Application No. PCT/US2009/001572, dated Jul. 17, 2009.
International Search Report for PCT/US2007/024367, dated Oct. 22, 2008.
Official Notice of Rejection dated Jul. 29, 2008, Japanese Patent Application No. 2007-533459.
Patent Abstracts of Japan 2004-221185 Aug. 5, 2004.
Patent Abstracts of Japan 11-040858, Feb. 12, 1999.
Patent Abstract of Japan 2001-181613, Jul. 3, 2001.
Lau, John, “Flip-Chip Technologies”, McGraw Hill, 1996.
International Materials Reviews, “Materials for Field Emission Displays”, A.P. Burden 2001.
PCT Search Report and Written Opinion for PCT Application No. US2007/007600, dated Oct. 31, 2007.
Nichia Corp.White LED, Part Nos. NSPW300BS, NSPW312BS, p. 1-3, 2000.
NPO-30394, Electrophoretic Deposition for Fabricating Microbatteries, p. 1-2, NASA Tech Briefs Issue. May 3, 2003.
Examination of related European Application No. 05 808 825.3-2203, dated Mar. 18, 2009.
Official Notice of Final Decision of Rejection re: related Japanese Patent Application No. 2007-533459, dated Dec. 26, 2008.
Rejection Decision re: related Chinese Patent Application No. 200580031382.3, dated Feb. 2, 2009.
Communication pursuant to Article 94(3) EPC re: related European Application No. 05808825.3, dated Feb. 18, 2009.
Notice on Reexamination for Chinese Patent Application No. 200580031382.3 dated May 28, 2010.
Patent Abstracts of Japan No. 2002-050799 dated Feb. 15, 2002 to Stanley Electric Co. Ltd.
Office Action from Japanese Patent Application No. 2007-533459 (Appeal No. 2009-006588) dated Jul. 16, 2010.
Office Action from Chinese Patent Application No. 200780012387.0 dated Jun. 30, 2010.
Summons for Oral Proceedings for European Patent Application No. 05808825.3 dated Sep. 9, 2010.
Notification of the First Office Action for Chinese Patent Application No. 200780050127.2 dated Aug. 8, 2010.
Notice of Rejection for counterpart counterpart Japanese Patent Application No. 2006-526964 dated Oct. 5, 2010.
Notification of the First Office Action for Chinese Patent Application No. 200780050197.8 dated Sep. 9, 2010.
Reexamination Decision No. 27346 for Chinese Patent Application No. 200580031382.3 dated Oct. 27, 2010.
Office Action from U.S. Appl. No. 11/982,276, dated Mar. 25, 2010.
Office Action from U.S. Appl. No. 11/827,626, dated Apr. 1, 2011.
Notice of Allowance from U.S. Appl. No. 10/666,399, dated Oct. 14, 2010.
Response to Office Action U.S. Appl. No. 12/077,638, OA dated Jul. 1, 2010, Resp. filed Aug. 30, 2010.
Response to Office Action U.S. Appl. No. 11/656,759, OA dated Nov. 25, 2009, Resp. filed Apr. 26, 2010.
Response to Office Action U.S. Appl. No. 11/899,790, OA dated Jun. 2, 2010, Resp. filed Nov. 1, 2010.
Response to Office Action U.S. Appl. No. 10/666,399, OA dated Dec. 22, 2009, Resp. filed Mar. 22, 2010.
Office Action from U.S. Appl. No. 11/881,683, dated Oct. 14, 2010.
Office Action from U.S. Appl. No. 11/899,790, dated Mar. 21, 2011.
Office Action from U.S. Appl. No. 12/077,638, dated Sep. 22, 2010.
Response to Office Action U.S. Appl. No. 11/398,214, OA dated Dec. 11, 2009, Resp. filed Mar. 2, 2010.
Response to Office Action U.S. Appl. No. 10/666,399, OA dated May 11, 2010, Resp. filed Aug. 11, 2010.
Response to Office Action U.S. Appl. No. 12/008,477, OA dated Mar. 1, 2010, Resp. filed May 26, 2010.
Response to Office Action U.S. Appl. No. 11/982,276, OA dated Mar. 25, 2010, Resp. filed Jun. 21, 2010.
Response to Office Action U.S. Appl. No. 11/881,683, OA dated May 12, 2010, Resp. filed Aug. 3, 2010.
Office Action from U.S. Appl. No. 11/982,276, dated Feb. 18, 2010.
Office Action from U.S. Appl. No. 11/398,214, dated Nov. 12, 2010.
Office Action from U.S. Appl. No. 11/656,759, dated May 21, 2010.
Office Action from U.S. Appl. No. 11/656,759, dated Mar. 9, 2011.
Office Action from U.S. Appl. No. 12/077,638, dated Dec. 21, 2010.
Response to OA from U.S. Appl. No. 11/595,720, dated May 14, 2010, filed Jul. 6, 2010.
Office Action from U.S. Appl. No. 11/982,276, dated Aug. 19, 2010.
Office Action from U.S. Appl. No. 12/077,638, dated Jul. 7, 2010.
Office Action from U.S. Appl. No. 10/666,399, dated May 11, 2010.
Response to OA from U.S. Appl. No. 12/077,638, OA dated Dec. 9, 2009, filed Feb. 26, 2010.
Response to OA from U.S. Appl. No. 11/982,276, OA dated Dec. 7, 2009, filed Feb. 5, 2010.
Response to OA from U.S. Appl. No. 11/982,276, OA dated Aug. 19, 2010, filed Nov. 2, 2010.
Office Action from U.S. Appl. No. 11/595,720, dated May 14, 2010.
Office Action from U.S. Appl. No. 11/827,626, dated Oct. 7, 2010.
Office Action from U.S. Appl. No. 12/008,477, dated Oct. 7, 2010.
Office Action from U.S. Appl. No. 11/881,683, dated May 12, 2010.
Office Action from U.S. Appl. No. 11/899,790, dated Jun. 2, 2010.
First Office Action for European Patent Application No. 07754163.9 dated Feb. 28, 2011.
Notice of Rejection (Final) in counterpart Japanese Patent Application No. 2006-526964 dated Feb. 22, 2011.
Minutes of Oral Proceedings (EPO Form 2009) in European Patent Application No. 05808825.3 dated Feb. 3, 2011.
Summons to Attend Oral Proceedings in European Patent Application No. 05808825.3 dated Feb. 3, 2011.
Office Action from counterpart Taiwan Patent Application No. 093128231 dated Apr. 21, 2011.
Examination Report for European Application No. 04 783 941.0-2203, dated Mar. 22, 2012.
Notification of First Office Action from Chinese Application No. 201010279016.21, dated Feb. 28, 2012.
Notification of the Third Office Action from Chinese Application No. 200780050127.2, dated Mar. 28, 2012.
Decision of Rejection from Japanese Application No. 2009-547218, dated Mar. 8, 2012.
Decision of Rejection from Japanese Application No. 2009-547219, dated Mar. 8, 2012.
Extended European Search Report Application No. 10012027.8-2203/2306526, dated Mar. 30, 2012.
Office Action for Taiwan Patent Application No. 094122646, dated Feb. 20, 2012.
Examination Report for European Application No. 08 171 399.2-2222, dated Mar. 26, 2012.
Notification of the First Office Action in Chinese Patent Application No. 201110029365.3 dated Jan. 4, 2012.
International Search Report and Written Opinion from Application No. PCT/US2011/001214, dated Mar. 21, 2012.
Notification of the First Office Action, Chinese Patent Application No. 201010279016.2, dated Feb. 28, 2012.
Office Action U.S. Appl. No. 12/008,477, dated Apr. 12, 2011.
Response to Office Action U.S. Appl. No. 12/008,477, filed Jun. 27, 2011.
Office Action U.S. Appl. No. 11/899,790, dated Jul. 27, 2011.
Response to Office Action U.S. Appl. No. 11/899,790, filed Nov. 22, 2011.
Office Action U.S. Appl. No. 12/287,764, dated Jul. 30, 2010.
Response to Office Action U.S. Appl. No. 12/287,764, filed Nov. 30, 2010.
Office Action U.S. Appl. No. 11/956,989, dated Apr. 16, 2010.
Response to Office Action U.S. Appl. No. 11/956,989, filed Jun. 14, 2010.
Response to Office Action U.S. Appl. No. 11/956,989, filed Jul. 14, 2010.
Office Action U.S. Appl. No. 12/287,764, dated Mar. 25, 2010.
Response to Office Action U.S. Appl. No. 12/287,764, filed Jul. 21, 2010.
Office Action U.S. Appl. No. 12/287,764, dated May 17, 2011.
Response to Office Action U.S. Appl. No. 12/287,764, filed Oct. 10, 2011.
Office Action U.S. Appl. No. 13/072,371, dated Oct. 5, 2011.
Response to Office Action U.S. Appl. No. 13/072,371, filed Dec. 23, 2011.
Office Action U.S. Appl. No. 11/656,759, dated Sep. 23, 2011.
Response to Office Action U.S. Appl. No. 11/656,759, filed Jan. 16, 2012.
Office Action U.S. Appl. No. 12/008,477, dated Sep. 19, 2011.
Response to Office Action U.S. Appl. No. 12/008,477, filed Jan. 25, 2012.
Office Action U.S. Appl. No. 12/862,640, dated Aug. 19, 2011.
Response to Office Action U.S. Appl. No. 12/862,640, filed Feb. 21, 2012.
Office Action U.S. Appl. No. 12/287,764, dated Oct. 26, 2011.
Response to Office Action U.S. Appl. No. 12/287,764, filed Mar. 6, 2012.
Office Action U.S. Appl. No. 11/899,790, dated Jan. 12, 2012.
Response to Office Action U.S. Appl. No. 11/899,790, filed Mar. 8, 2012.
Office Action U.S. Appl. No. 12/862,640, dated Mar. 9, 2012.
Office Action U.S. Appl. No. 12/287,764, dated Jan. 13, 2011.
Response to Office Action U.S. Appl. No. 12/287,764, filed May 5, 2011.
Second Office Action for Chinese Patent Application No. 200780050127.2 dated Jun. 15, 2011.
International Preliminary Examination Report for PCT Application No. PCT/US07/24366 dated Jun. 29, 2011.
International Preliminary Examination Report for PCT Application No. PCT/US07/24367 dated Jun. 29, 2011.
Decision to Refuse a European Patent Application regarding EP 05 808 825.3 dated Jun. 14, 2011.
Office Action for Korean Patent Application No. 10-2007-7008694 dated Aug. 7, 2011.
Notice of Rejection of counterpart Japanese Patent Application No. 2006-526964 dated Sep. 13, 2011.
Notification of Reasons for Rejection for Japanese Patent Application No. 2009-547219 dated Sep. 16, 2011.
Notification of Reasons for Rejection for Japanese Patent Application No. 2009-547218 dated Sep. 16, 2011.
Notice of Reasons for Rejection for Japanese Patent Application No. JP 2008-317576 dated Sep. 13, 2011.
Notification of Reasons for Rejection for Japanese Patent Appl. No. 2011-279356, dated Jan. 23, 2013.
Office Action from Japanese Office Action. Application No. 2011-224055, dated Feb. 7, 2013.
Notice of Reasons for Rejection from Japanese Patent appl. No. 2012-026326, dated May 28, 2013.
Notice of Reasons for Rejection from Japanese Patent appl. No. 2012-026327, dated May 28, 2013.
Rejection Decision from Taiwanese Patent Appl. No. 094122646, dated Dec. 14, 2012.
Decision of Rejection from Japanese Patent Appl. No. 2008-317576, dated Dec. 18, 2012.
Decision of Rejection from Japanese Patent Appl. No. 2006-526964, dated Dec. 18, 2012.
Notice of Results of Re-Consideration Prior to Appeal from Korean Patent Application No. 10-2007-7008694, dated Sep. 21, 2012.
Rejection Decision for Chinese Patent Application No. 201110029365.3, dated Sep. 10, 2012.
Noting of Loss of Rights from European Application No. 04783941.0-2203/1665361, dated Nov. 6, 2012.
Second Office Action from Chinese Patent Application No. 20101029016.2, dated Dec. 24, 2012.
Official Action from European Patent Application No. 07874432.3, dated Nov. 13, 2012.
Official Action from European Patent Application No. 07840092.6, dated Nov. 13, 2012.
Rejection Decision from Chinese Patent Appl. No. 201010279016.2, dated Jun. 21, 2013.
Examination Report from European Patent Appl. No. 04 783 941.0-1555, dated Jul. 25, 2013.
Office Action from Korean Patent Appl. No. 10-2009-7017405, dated Oct. 23, 2013.
Appeal Decision to Grant a Patent from Japanese Patent No. 2007-506279, dated Oct. 28, 2013.
Office Action from U.S. Appl. No. 13/072.371, dated Mar. 29, 2012.
Response to OA from U.S. Appl. No. 13/072,371, filed May 16, 2012.
Office Action from U.S. Appl. No. 11/656,759, dated May 1, 2012.
Response to OA from U.S. Appl. No. 11/656.759, filed Jun. 26, 2012.
Office Action from U.S. Appl. No. 12/862,640, dated Jun. 29, 2012.
Response to OA from U.S. Appl. No. 12/862,640, filed Sep. 20, 2012.
Office Action from U.S. Appl. No. 13/072,371, dated Jul. 23, 2012.
Response to OA from U.S. Appl. No. 13/072,371, filed Oct. 17, 2012.
Office Action from U.S. Appl. No. 12/842,639, dated Aug. 14, 2012.
Response to OA from U.S. Appl. No. 12/842,639, filed Nov. 9, 2012.
Office Action from U.S. Appl. No. 12/862,640, dated Oct. 2, 2012.
Response to OA from U.S. Appl. No. 12/862,640, filed Apr. 17, 2013.
Office Action from U.S. Appl. No. 11/899,790, dated Dec. 5, 2012.
Response to OA from U.S. Appl. No. 11/899,790, filed Feb. 27, 2013.
Office Action from U.S. Appl. No. 12/862,640, dated Jan. 24, 2013.
Office Action from U.S. Appl. No. 13/072,371, dated Jan. 30, 2013.
Response to OA from U.S. Appl. No. 13/072,371, filed Apr. 22, 2013.
Office Action from U.S. Appl. No. 11/656,759, dated Feb. 13, 2013.
Response to OA from U.S. Appl. No. 11/656,759, filed May 13, 2013.
Office Action from U.S. Appl. No. 11/656,759, dated Jul. 2, 2013.
Response to OA from U.S. Appl. No. 11/656.759, filed Aug. 21, 2013.
Office Action from U.S. Appl. No. No. 11/899,790, dated May 1, 2013.
Response to OA from U.S. Appl. No. 11/899,790, filed Jun. 18, 2013.
Office Action from U.S. Appl. No. 13/072,371, dated Apr. 30, 2013.
Office Action from U.S. Appl. No. 12/862,640, dated Apr. 30, 2013.
Office Action from U.S. Appl. No. 12/842,639. dated Mar. 7, 2013.
Response to OA from U.S. Appl. No. 12/842,639, filed Jun. 5, 2013.
Office Action from U.S. Appl. No. 11/899,790, dated Sep. 17, 2013.
Office Action from U.S. Appl. No. 12/008,477, dated Sep. 3, 2013.
Interrogation from Japanese Patent Appl. No. 2008-317576, dated Jul. 9, 2013.
Decision of Final Rejection from Japanese Patent Appl. No. 2011-224055, dated Jul. 26, 2013.
Decision of Rejection from Japanese Patent appl. No. 2011-279356, dated Jul. 31, 2013.
Notice of Rejection from Japanese Patent Appl. No. 2008-527912, dated Jun. 5, 2013.
Notice of Rejection from Japanese Patent Appl. No. 2008-527912 dated Jun. 14, 2011.
International Preliminary Report on Patentability from Appl. No. PCT/US06/24884 dated Jun. 12, 2008.
Nichia Corp. White LED, Part No. NSPW312BX, “Specification for Nichia White LED, Model N5W312BS”, pp. 1-14, 2004.
Nichia Corp. White LED, Part No. NSPW300BS. Specifications for Nichia White LED. Model NSPW300BS, pp. 1-14, 2004.
Office Action from Japanese Patent Appl. No. 2007-216808, dated Sep. 6, 2010.
Office Action from Japanese Patent Appl. No. 2011-224055, dated Jan. 12, 2012.
Decision of Final Rejection from Japanese Patent Appl. No. 2007-216808, dated Jan. 1, 2011.
Office Action from German Patent Appl. No. 10 2007 040 841.4-33, dated Sep. 17, 2009.
Office Action from German Patent Appl. No. 10 2007 040 811.2, dated Sep. 17, 2009.
Office Action from Chinese Patent Appl. No. 20070148326.9, dated Jun. 19, 2009, 2 pages.
Schubert, “Light-Emitting Diodes”, Cambridge University Press. 2003, pp. 92-96.
First Office Action and Search Report from Chinese Patent Application No. 201210030627.2, dated Dec. 3, 2012.
Notice of Allowance from Korean Patent Appl. No. 10-2009-7017405, dated Feb, 18, 2014.
Search Report from Taiwanese Patent appl. No. 096143968, dated Feb. 17, 2014.
Decision of Rejection from Japanese Patent Appl. No. 2012-026327, dated Apr. 8, 2014.
Brief Summary of Rejection Decision from Chinese Patent Appl. No. 201010279016.2 dated Apr. 22, 2014.
Preliminary Report from Japanese Patent Appl. No. 2013-020955 dated Dec. 26, 2013 (received May 8, 2014).
Preliminary Report from Japanese Patent Appl. No. 2013-024242 dated Feb. 26, 2014 (received May 8, 2014).
Office Action from Korean Patent Appl. No. 10-2009-7017407, dated Apr. 28, 2014.
Notification of Reexamination from Chinese Patent appl. No. 201110029365.3 dated May 7, 2014.
Office Action from U.S. Appl. No. 13/429,053, dated Apr. 11, 2014.
Office Action from U.S. Appl. No. 12/008,477, dated Apr. 25, 2014.
Response to OA from U.S. Appl. No. 12/008,477, filed May 27, 2014.
Office Action from U.S. Appl. No. 13/072,371, dated Apr. 29, 2014.
Office Action from U.S. Appl. No. 11/656,759, dated May 27, 2014.
Office Action (Brief Description of) from Chinese Patent Appl. No. 201010279016.2, dated Jan. 10, 2014.
IPT's Decision from Korean Patent Appl. No. 10-2007-7008694, dated Dec. 24, 2013.
Office Action from U.S. Appl. No. 12/862,640, dated Dec. 20, 2013.
Office Action from U.S. Appl. No. 11/656,759, dated Nov. 18, 2013.
Decision of Rejection from Japanese Patent appl. No. 2012-02326, dated Apr. 8, 2014.
First Office Action and Search Report from Chinese Patent Appl. No. 2012-10175686.9, dated Mar. 31, 2014.
Translation of Office Action from Taiwanese Patent Appl. No. 096143968, dated Feb. 13, 2014.
Office Action from U.S. Appl. No. 11/699,790, dated Feb. 25, 2014.
Notification of Reexamination from Chinese Patent Appl. No. 200780050127.2, dated Jun. 3, 2014.
Notification of Allowance from Taiwan Patent Appl. No. 101130701, dated Jul. 15, 2014.
Office Action and Search Report from Taiwan Patent Appl. No. 097110195, dated Jul. 18, 2014.
Board Decision from Chinese Patent Appl. No. 201110029365.3, dated Aug. 13, 2014.
Second Office Action from Chinese Patent Appl. No. 201210175686.9, dated Sep. 3, 2014.
Office Action from Taiwanese Patent Appl. No. 097110195, dated Sep. 9, 2014.
Office Action from U.S. Appl. No. 12/842.639, dated Aug. 6, 2014.
Office Action from U.S. Appl. No. 13/017,845, dated Sep. 11, 2014.
Fourth Examination from European Patent Appl. No. 04 781 941.0-1552, dated Oct. 7, 2014.
Summons to attend oral proceedings from European Patent Appl. No. 411.52.106724/0, dated Sep. 9, 2014.
Office Action from U.S. Appl. No. 11/899,790, dated Jun. 25, 2014.
Notice of Final Rejection from Korean Appl. No. 10-2009-7017407, dated Feb. 27, 2015.
Notice of Allowance from Taiwanese Appl. No. 096143968, dated Mar. 10, 2015.
Office Action from U.S. Appl. No. 12/842,639, dated Mar. 17, 2015.
Reexamination Decision from Chinese Patent Appl. No. 200780050127.2, dated Jan. 5, 2015.
Office Action from U.S. Appl. No. 14/209,652, dated Dec. 12, 2014.
Letter regarding unfavorable decision on appeal from Japanese Appl. No. 2011-279356, dated Nov. 12, 2014.
Preliminary Examination Report from Japanese Appl. No. 2012-026326, dated Oct. 1, 2014.
Third Office Action from Chinese Appl. No. 201210175686.9, dated Dec. 11, 2014.
Office Action from U.S. Appl. No. 13/429,053, dated Sep. 22, 2014.
Office Action from U.S. Appl. No. 12/862,640, dated Oct. 17, 2014.
Notification of re-examination from Chinese Appl. No. 201010279016.2, dated Jan. 9, 2015.
Summons to attend Oral Proceedings from European Appl. No. 08171399.2, dated Jan. 16, 2015.
Decision of Re-Examination from Chinese Appl. No. 201080001658.4, dated Dec. 29, 2014.
Notice of Allowance from Taiwanese Patent appl. No. 097110195, dated Apr. 30, 2015.
Office Action from Taiwanese Patent Appl. No. 100107044 dated Jun. 4, 2015.
Office Action from German Patent Appl. No. 11 2006 002 251.2, dated Jul. 8, 2015.
Notice of Allowance from Korean Patent Appl. No. 9-5-2015-047659777, dated Jul. 16, 2015.
Communication of Intention to Grant and Minutes from European Appl. No. 08 171 399.2-1554, dated Jun. 19, 2015.
Decision of Rejection Letter from Chinese Patent Appl. No. 201010279016.2, dated Jun. 3, 2015.
Fourth Office Action from Chinese Patent Appl. No. 201210175686.9, dated Jul. 9, 2015.
Office Action from U.S. Appl. No. 12/862,640, dated Jun. 5, 2015.
Examination from European Patent Appl. No. 07 874 432.3-1551, dated Dec. 15, 2015.
Office Action from U.S. Appl. No. 14/494,795: dated Dec. 23, 2015.
Examination Report from European Patent Appl. No. 07840092.6, dated Feb. 23, 2016.
Office Action from U.S. Appl. No. 12/542,639; dated May 5, 2016.
Notice of Reasons for Rejection from Japanese Patent Appl. No. 2012-26327, dated Nov. 17, 2015.
Notice of Allowance from Chinese Patent Appl. No. 201210175686.9, dated Dec. 1, 2015.
Summons to Attend Oral Proceedings from European Patent Appl. No. 05808825/1797597, dated Nov. 17, 2015.
Office Action from U.S. Appl. No. 14/446,240, dated Aug. 5, 2015.
Office Action from U.S. Appl. No. 12/862,640, dated Oct. 23, 2015.
Notice for Rejection for Japanese Application No. 2012-026327; dated Jul. 5, 2016.
Foreign Office Action for European Application No. 07874432.3: dated Oct. 17, 2016.
Office Action for U.S. Appl. No. 12/842,639; dated Oct. 27, 2016.
Office Action for U.S. Appl. No. 12/506,969; dated Dec. 19, 2016.
Appeal Decision for Japanese Application No. 2012-26327: dated Oct. 27, 2016.
Office Action for U.S. Appl. No. 12/862,640; dated Oct. 4, 2017.
Office Action for U.S. Appl. No. 12/842,639; dated Dec. 11, 2017.
Summons to Attend Oral Proceedings for European Application No. 07840092.6; Dated Feb. 14, 2018.
Office Action for U.S. Appl. No. 12/842,639; dated Jul. 2, 2018.
Examination from European Appl. No. 04 783 941.0-1552, dated Mar. 6, 2014.
Office Action and Search Report from Taiwanese Patent Appl. No. 101130701, dated Feb. 6, 2014.
Search Report from Taiwanese Patent Appl. No. 097110195, dated Mar. 12, 2014.
Related Publications (1)
Number Date Country
20090278156 A1 Nov 2009 US
Continuations (1)
Number Date Country
Parent 10666399 Sep 2003 US
Child 12506989 US