Field of the Invention
This invention relates to coating of semiconductor devices and more particularly to a method and apparatus for coating light emitting diodes (LEDs) with a matrix material containing one or more light conversion materials.
Description of the Related Art
LEDs are solid-state devices that convert electric energy to light and they generally comprise an active layer of semiconductor material sandwiched between two oppositely doped layers. When a bias is applied across the doped layers, holes and electrons are injected into the active layer where they recombine to generate light that is emitted omnidirectionally from the active layer and from all surfaces of the LED. Recent advances in LEDs (such as Group III nitride based LEDs) have resulted in highly efficient light sources that surpass the efficiency of filament-based light sources, providing light with equal or greater brightness in relation to input power.
One disadvantage of conventional LEDs used for lighting applications is that they cannot generate white light from their active layers. One way to produce white light from conventional LEDs is to combine different wavelengths of light from different LEDs. For example, white light can be produced by combining the light from red, green and blue emitting LEDs, or combining the light from blue and yellow LEDs.
One disadvantage of this approach is that it requires the use of multiple LEDs to produce a single color of light, increasing the overall cost and complexity. The different colors of light are also generated from different types of LEDs fabricated from different material systems. Combining different LED types to form a white lamp can require costly fabrication techniques and can require complex control circuitry since each device may have different electrical requirements and may behave differently under varied operating conditions (e.g. with temperature, current or time).
More recently, the light from a single blue emitting LED has been converted to white light by coating the LED with a yellow phosphor, polymer or dye, with a typical phosphor being cerium-doped yttrium aluminum garnet (Ce:YAG). [See Nichia Corp. white LED, Part No. NSPW300BS, NSPW312BS, etc.; See also U.S. Pat. No. 5,959,316 to Hayden, “Multiple Encapsulation of Phosphor-LED Devices”]. The surrounding phosphor material “downconverts” the wavelength of some of the LED's blue light, changing its color to yellow. For example, if a nitride-based blue emitting LED is surrounded by a yellow phosphor, some of the blue light passes through the phosphor without being changed while a substantial portion of the light is downconverted to yellow. The LED emits both blue and yellow light, which combine to provide a white light.
One conventional method for coating an LED with a phosphor layer utilizes a syringe or nozzle for injecting a phosphor containing epoxy over the LED. One disadvantage of this method is that it is often difficult to control the phosphor layer's geometry and thickness. As a result, light emitting from the LED at different angles can pass through different amounts of conversion material, which can result in an LED with non-uniform color temperature as a function of viewing angle. Another disadvantage of the syringe method is that because the geometry and thickness is hard to control, it is difficult to consistently reproduce LEDs with the same or similar emission characteristics.
Another conventional method for coating an LED is by stencil printing, which is described in European Patent Application EP 1198016 A2 to Lowery. Multiple light emitting semiconductor devices are arranged on a substrate with a desired distance between adjacent LEDs. The stencil is provided having openings that align with the LEDs, with the holes being slightly larger than the LEDs and the stencil being thicker than the LEDs. A stencil is positioned on the substrate with each of the LEDs located within a respective opening in the stencil. A composition is then deposited in the stencil openings, covering the LEDs, with a typical composition being a phosphor in a silicone polymer that can be cured by heat or light. After the holes are filled, the stencil is removed from the substrate and the stenciling composition is cured to a solid state.
One disadvantage of this method is that, like the syringe method above, it can be difficult to control the geometry and layer thickness of the phosphor containing polymer. The stenciling composition may not fully fill the stencil opening such that the resulting layer is not uniform. The phosphor containing composition can also stick to the stencil opening which reduces the amount of composition remaining on the LED. These problems can result in LEDs having non-uniform color temperature and LEDs that are difficult to consistently reproduce with the same or similar emission characteristics.
Another conventional method for coating LEDs with a phosphor utilizes electrophoretic deposition. The conversion material particles are suspended in an electrolyte based solution. A plurality of LEDs are arranged on a conductive substrate that is then almost completely immersed in the electrolyte solution. One electrode from a power source is coupled to the conductive substrate at a location that is not immersed in the solution, and the other electrode is arranged in the electrolyte solution. The bias from the power source is applied across the electrodes, which causes current to pass through the solution to the substrate and its LEDs. This creates an electric field that causes the conversion material to be drawn to the LEDs, covering the LEDs with the conversion material.
One of the disadvantages of this method is that after the LEDs are covered by the conversion material, the substrate is removed from the electrolyte solution so that LEDs and their conversion material can be covered by a protective epoxy. This adds an additional step to the process and the conversion material (phosphor particles) can be disturbed prior to the application of the epoxy. Another disadvantage of this process is that the electric field in the electrolyte solution can vary such that different concentrations of conversion material can be deposited across the LEDs. The conversion particles can also settle in the solution which can also result in different conversion material concentrations across the LEDs. The electrolyte solution can be stirred to prevent settling, but this presents the danger of disturbing the particles already on the LEDs.
The present invention seeks to provide a method and apparatus for coating semiconductor devices wherein the geometry and thickness of the coating layer can be controlled. The methods and apparatus according to the present invention are particularly adapted to coating light emitting diodes (LEDs) with a controlled layer of “matrix material” having conversion particles. The methods and apparatus are simple and easy to use, and allow for the reproduction of coated semiconductor devices having coating layer geometry and thickness that are substantially the same.
One embodiment of a method for coating a plurality of semiconductor devices according to the present invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a coating material is injected into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured or otherwise treated so that the semiconductor devices are at least partially embedded in the coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the coating material.
Another embodiment of a method according to the present invention is particularly adapted to coating a plurality of light emitting diodes (LEDs) and comprises providing a mold with a formation cavity. A plurality of LEDs are mounted within the mold formation cavity and a matrix material is injected or otherwise introduced into the mold to fill the formation cavity and at least partially cover the LEDs. The matrix material is then cured or otherwise treated so that the LEDs are at least partially embedded in the matrix material. The matrix material with the embedded LEDs is removed from the formation cavity and the embedded LEDs are separated so that each is at least partially covered by a layer of the matrix material.
One embodiment of an apparatus for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a coating material can be injected or otherwise introduced into and fills the formation cavity to at least partially cover the semiconductor devices.
Another embodiment of apparatus according to the present invention is particularly adapted to coating LEDs and comprises a mold housing having a formation cavity arranged to hold a plurality of LEDs. The formation cavity comprising at least a top and bottom surface with the LEDs arranged on the bottom or top surface. The mold housing is also arranged so that a matrix material can be injected into its formation cavity covering the LEDs and filling the formation cavity.
After the coated LEDs are separated according to the present invention, a bias can be applied to each causing light to be emitted omnidirectionally. LED light passes through the layer of matrix material where at least some of it is converted to a different wavelength of light by the conversion particles. The arrangement of the formation cavity and the location of cuts between adjacent LEDs allows for the geometry and thickness of the layer of matrix material on each of the separated LEDs to be controlled such that the light emitting from the LED at different points on its surface passes through essentially the same amount of conversion material. This results in an LED with a more uniform color temperature as a function of viewing angle.
These and other further features and advantages of the invention will be apparent to those skilled in the art from the following detailed description, taken together with the accompanying drawings, in which:
In step 14, semiconductor devices are arranged within the formation cavity and in the preferred method 10, the devices are precisely arranged in a predetermined pattern. The devices can be arranged in many different ways within the formation cavity using many different methods. In a preferred arrangement method the devices are placed on the lower surface by separating the upper surface from the lower and placing the devices using a precision pick and place system. Alternatively, the devices can be placed on the lower surface using a template such as a thin metal foil having a size and shape similar to the lower surface and openings corresponding to desired locations of the semiconductor devices. The foil can be placed on the lower surface and the semiconductor devices can be arranged within the foil openings. After the devices are placed, the foil can be removed. In both methods the upper surface can then be returned over the lower surface after the devices are placed. As further described below, the lateral space between adjacent devices and the space between the upper and lower surfaces provides the desired coating thickness over the semiconductor devices.
In step 16 a coating material is injected or otherwise introduced into the mold's formation cavity, filling the cavity and covering the semiconductor devices. In step 18 the coating material is processed and stabilized resulting in the hardening of the coating material and the semiconductors becoming at least partially embedded in the coating material. A sheet of semiconductor devices and coating material is formed. In a preferred method 10, the coating material is as an epoxy, silicone or other polymer and the preferred processing and stabilizing step 18 includes curing using conventional methods dictated by the coating material's curing schedule. This can include heat curing, optical curing or curing in room temperature. Alternatively, the matrix or coating material may comprise any variety of thermoset, thermoplast, injection molding, or other polymers or related materials.
In step 20, the sheet of semiconductor devices and coating material is removed from the mold's formation cavity for further processing. In step 22 the individual semiconductor devices are separated by cutting through the coating material between devices. This can be accomplished using many different methods such as conventional sawing or dicing, or by using a scribe and break.
As described above, in the preferred step 14 the semiconductor devices are placed on the lower surface with a uniform lateral distance between adjacent devices. The upper and lower surfaces of the formation cavity are also preferably parallel. If similar semiconductor devices having the same height are placed on the lower surface of the formation cavity, the distance between the top of each of the devices and the upper surface should be the same. This results in the thickness of the layer of coating material on the top of each of the devices that is substantially the same. When the devices are separated, the cut is preferably located such that the resulting layer covering the sides of each of the devices has the same thickness. In one embodiment of a method according to the present invention, the cut is equal distance between adjacent devices. This process produces devices that have a nearly uniform layer of coating material and the process can be repeated to produce similar devices. In other embodiments different types of cuts can be made at different angles to change the coating material thickness at different locations over the semiconductor devices.
The method 10 can be used to coat many different types of semiconductor devices, with a preferred device being a solid state light emitter such as a light emitting diode (LED). The preferred coating material in the method for covering LEDs is a “matrix material” that comprises a curable material and one or more light conversion materials (further described below).
To further reduce the danger that the upper and lower surfaces would adhere to the matrix material or LEDs, the surfaces of the formation cavity can also be covered with a coating or film layer that resists adhering to the matrix material and can also withstand heat from processing and curing. The film should be tacky enough on both sides to stick to glass or metal that forms the upper and lower surfaces and to stick to semiconductor materials that form the LEDs. The film should not bond to these materials or the matrix material which allows the semiconductor devices and cured matrix material to be easily separated from the mold surfaces without damage. Many different films can be used with a preferred film being a commercially available tape referred to as Gel-Pak®, provided by Gel-Pak, LLC.
In step 34 the LEDs are placed in a predefined array or pattern within the mold's formation cavity and in a preferred embodiment the film layer is arranged between the LEDs and the cavity's surface. The LEDs are preferably arranged on the lower surface of the formation cavity and can be placed using the same methods as used in step 14 of the method 10 described above.
It is desirable to have sufficient adhesion between the LEDs and the surface of the formation cavity such that underflow of the matrix materials is avoided between the LEDs and surface. Lateral LEDs have contacts on one surface and this surface is typically adjacent to a formation cavity surface (or film layer). Vertical LEDs typically have contacts on opposite surfaces, both of which can be adjacent to a formation cavity surface. It is desirable to avoid matrix material underflow that can cover the contacts so that after processing the LED can be electrically contacted. If underflow occurs, the matrix material must be removed from the contact surface, typically by etching, which can damage the LED and the contacts. One method to improve adhesion and reduce underflow is to apply a small amount of low tack adhesive such as silicone between the LED and the mold surface or film. This additional layer prevents underflow and can also serve as surface protection for the contacts during heat processing steps such as curing. Silicone can be removed by using convention cleaning processes that do not damage the LED or contacts.
In step 36 the matrix material is injected or otherwise introduced into and fills the mold's cavity, covering the LEDs. The matrix material can be made of many different compounds but preferably contains one or more light sensitive conversion materials such as phosphors distributed in an epoxy or silicone binder that can be thermally or optically curable, or cured at room temperature. To achieve uniform LED light emission, the conversion material should be distributed uniformly throughout the epoxy or silicone. For embodiments where it is desirable to emit non-uniform light, the conversion material can be non-uniform in the matrix material such that LED light emitting at different angles passes through different amounts of matrix material. Alternatively, the matrix material may exhibit or contain materials which exhibit a variety of useful properties such as high index of refraction to increase light extraction from the LED.
The following is a list of only some of the phosphors and that can be used alone or in combination as the conversion material, grouped by the re-emitted color that each emits following excitation.
Red
Y2O2S:Eu3+,Bi3+
YVO4:Eu3+,Bi3+
SrS:Eu2+
SrY2S4:Eu2+
CaLa2S4:Ce3+
(Ca,Sr)S:Eu2+
Y2O3:Eu3+,Bi3+
Lu2O3:Eu3+
(Sr2-xLax)(Ce1-xEux)O4
Sr2Ce1-xEuxO4
Sr2-xEuxCeO4
Sr2CeO4
SrTiO3:Pr3+,Ga3+
Orange
SrSiO3:Eu,Bi
Yellow/Green
YBO3:Ce3+,Tb3+
BaMgAl10O17:Eu2+,Mn2+
(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+
ZnS:Cu+,Al3+
LaPO4:Ce,Tb
Ca8Mg(SiO4)4Cl2:Eu2+,Mn2+
((Gd,Y,Lu,Se,La,Sm)3(Al,Ga,In)5O12:Ce3+
((Gd,Y)1-xSmx)3(Al1-yGay)5O12:Ce3+
(Y1-p-q-rGdpCeqSmr)3(Al1-yGay)5O12
Y3 (Al1-sGas)5O12:Ce3+
(Y,Ga,La)3Al5O12:Ce3+
Gd3In5O12:Ce3+
(Gd,Y)3Al5O12:Ce3+,Pr3+
Ba2(Mg,Zn)Si2O7:Eu2+
(Y,Ca,Sr)3(Al,Ga,Si)5(O,S)12
Gd0.46Sr0.31Al1.23OxF1.38:Eu2+0.06
(Ba1-x-ySrxCay)SiO4:Eu
Ba2SiO4:Eu2+
Blue
ZnS:Ag,Al
Combined Yellow/Red
Y3Al5O12:Ce3+,Pr3+
White
SrS:Eu2+,Ce3+,K+
It should be understood that many other phosphors and other materials can be used as the conversion material according to the present invention.
From the list above, the following phosphors are preferred for use as the conversion material based on certain desirable characteristic. Each is excited in the blue and/or UV emission spectrum, provides a desirable peak emission, has efficient light conversion, and has acceptable Stokes shift.
Red
Lu2O3:Eu3+
(Sr2-xLax)(Ce1-xEux)O4
Sr2Ce1-xEuxO4
Sr2-xEuxCeO4
SrTiO3:Pr3+,Ga3+
Yellow/Green
(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+
Ba2(Mg,Zn)Si2O7:Eu2+
Gd0.46Sr0.31Al1.23OxF1.38:Eu2+0.06
(Ba1-x-ySrxCay)SiO4:Eu
Ba2SiO4:Eu2+
To further improve the uniformity of light emission from the covered LED, the matrix material can also include scattering particles to randomly refract the light as it passes through the matrix material. To effectively scatter light, the diameter of the scattering particles should be approximately one half of the wavelength of the light being scattered. Light from the LEDs pass through the particles and is refracted to mix and spread the light. Preferred scattering particles do not substantially absorb LED light and have a substantially different index of refraction than the material in which it is embedded (for example, epoxy). The scattering particles should have as high of an index of refraction as possible. Suitable scattering particles can be made of titanium oxide (TiO2) which has a high index of refraction (n=2.6 to 2.9). Other elements such as small voids or pores could also be used as to scatter the light.
In step 38, the matrix material is cured such that the LEDs are at least partially embedded in the matrix material. In the embodiment where the formation cavity comprises parallel upper and lower surfaces, LEDs and matrix material form a sheet with the LEDs at least partially embedded in the matrix material. The matrix material is allowed to cure by the material's curing schedule either in room temperature, under light for optical curing, or at an elevated temperature for heat curing. In a preferred embodiment of the method 30, all surfaces of the LEDs are covered except for their bottom surface. In step 40 the sheet of LEDs and matrix material is removed from the molds formation cavity, with one method being separating the upper and lower surfaces of the mold to release the sheet, although many other methods can also be used. In step 42, each LED can be singulated, preferably by separating the LEDs in the sheet into individual devices each of which has a similar thickness of matrix material around it. The methods described under step 20 of method 10 can be used, including sawing or dicing or scribe-and-break.
The mold is designed such that the distance between the formation cavity's upper and lower surfaces and the lateral separation between adjacent LEDs results in the desired uniform matrix material thickness on each of the separated LEDs. This results in coated LEDs that emit uniform color temperature and LEDs that can be consistently reproduced with the same or similar emission characteristics.
As more fully described below, depending on the type of LED being coated, the mold can be arranged differently. For lateral devices, where both the positive and negative terminals are on the same LED surface, the LEDs can be arranged with the contacts adjacent to the cavity's lower surface. Spacers can be included between the upper and lower surfaces to maintain the desired distance between the two such that there is a space between the top of the LEDs and the upper surface of the formation cavity. When the cavity is filled with the matrix material, that top surface of each of the LEDs is covered by a layer of matrix material having a similar thickness.
For LEDs having vertical contact geometry, one contact can be on each LED's top surface and the other contact can be on the LED's bottom surface. The top contact terminal should be protected during injection of the matrix material so that it is not covered by the matrix material. In one embodiment, the cavity's upper surface rests on the top surface contacts of the LEDs, with the contact point between the two preventing the top contacts from being fully covered by the injected matrix material.
For each of the above methods, the mold's formation cavity can be provided without a top surface. In those embodiments the matrix should be applied carefully and in a more controlled fashion to provide the desired thickness for the top layer in lateral LEDs and to prevent covering the top contact surface in vertical LEDs.
Coating Apparatus
The LEDs 55 can be placed on the support block using the precision placement methods described above. A double sided adhesive film 58 can also be included between the LEDs 55 and the bottom block's flat surface 56. As described above, the film 58 sticks to the block surface 56 and also provides a tacky surface that holds the LEDs 55. The film 58 also withstands processing and curing steps while not adhering to the matrix material, with a suitable material for film 58 being Gel-Pak® (described above in the method 10 of
The mold housing 50 also includes an upper section 61 arranged over the lower section 52. The upper section 61 comprises a top rigid support block 62 that provides a flat top surface 64 and can be made of the same material with the same or different thickness as the bottom rigid support block 54. A second layer of adhesive film 63 can also be included on the flat top surface 64 to provide a surface that does resists adhesion to the matrix material, and withstands the processing and curing steps.
The upper section 61 is arranged over the lower section 52 with the space between the two at least partially defining the mold's formation cavity 68. The space between the two should be large enough to provide a space between the top of the LEDs 55 and the second adhesive film 63. Referring to
During the injection of the matrix material 70 and subsequent processing/curing steps, the distance between the lower and upper sections 52 and 61 should be maintained. The lower and upper sections 52 and 61 can have first and second vertical spacers 65, 66 (shown in
The inside surfaces of the spacers 65, 66 further define the formation cavity 68 into which the matrix material 70 is injected. The matrix material 70 can be injected or introduced into the cavity 68 by many different methods according to the present invention. One such method comprises removing the upper section 61, injecting the material 70 into the cavity using a syringe, and replacing the upper section 61. Alternatively, the mold 50 can have an access opening through one of its rigid blocks 54, 62 or through one its spacers 65, 66 so that the matrix material 70 can be injected into the cavity without removing either the lower and upper sections 52, 61 or one of the spacers 65, 66. The matrix material 70 can be made of the same material as described in step 36 of the method 30 above and preferably comprises phosphor conversion particles of one or more different type distributed uniformly throughout a curable epoxy, silicone or other polymer.
After the matrix material 70 is injected into the formation cavity 68, the matrix material 70 is cured using a process dictated by the type of epoxy or silicone such as heat curing, light curing or room temperature cooling. After the curing process is complete the matrix material 70 and LEDs 55 form a sheet that can be removed from the mold's formation cavity 68 by removing one or both of the lower and upper sections 52, 61, and/or one or both of the spacers 65, 66.
For different shaped LEDs, the matrix material can also be cut so that the matrix material layer conforms to the shape of the LED.
Like the LEDs 55 in
The apparatus 100 also comprises an upper section 112 that is similar to the upper section 61 described in
Like the LEDs 102 in
Referring to
Each of the apparatus described above can include a small amount of low tack adhesive such as silicone between the LED contacts and the mold surface or film as described in the method 10 of
Although the present invention has been described in considerable detail with reference to certain preferred configurations thereof, other versions are possible. Different curable materials and light conversion particles can be used. The molds can take different shapes, can have different components and the semiconductor devices can be arranged differently in the mold's formation cavity. The individual LEDs can be separated from the sheet using many different sawing or dicing methods, with the cuts being straight or angled through the matrix material. The different coating apparatus described above can be provided without an upper section and in those embodiments the matrix material should be introduced in a careful and controlled manner to provide the desired layer of matrix material. Therefore, the spirit and scope of the appended claims should not be limited to their preferred versions contained therein.
This application is a continuation of and claims the benefit of U.S. patent application Ser. No. 10/666,399 to Leung et al., filed on Sep. 18, 2003.
Number | Name | Date | Kind |
---|---|---|---|
3780357 | Haitz | Dec 1973 | A |
4576796 | McCormick | Mar 1986 | A |
4733335 | Serizawa et al. | Mar 1988 | A |
4918497 | Edmond | Apr 1990 | A |
4935665 | Murata | Jun 1990 | A |
4946547 | Palmour et al. | Aug 1990 | A |
4966862 | Edmond | Oct 1990 | A |
5027168 | Edmond | Jun 1991 | A |
5200022 | Kong et al. | Apr 1993 | A |
5210051 | Carter, Jr. | May 1993 | A |
5277840 | Osaka et al. | Jan 1994 | A |
5338944 | Edmond et al. | Aug 1994 | A |
RE34861 | Davis et al. | Feb 1995 | E |
5393993 | Edmond et al. | Feb 1995 | A |
5416342 | Edmond et al. | May 1995 | A |
5475241 | Harrah et al. | Dec 1995 | A |
5523589 | Edmond et al. | Jun 1996 | A |
5604135 | Edmond et al. | Feb 1997 | A |
5614131 | Mukerji et al. | Mar 1997 | A |
5631190 | Negley | May 1997 | A |
5739554 | Edmond et al. | Apr 1998 | A |
5766987 | Mitchell et al. | Jun 1998 | A |
5813753 | Vriens et al. | Sep 1998 | A |
5849354 | Tsuchiyama | Dec 1998 | A |
5858278 | Itoh et al. | Jan 1999 | A |
5912477 | Negley | Jun 1999 | A |
5923053 | Jakowetz et al. | Jul 1999 | A |
5936264 | Ishinaga | Aug 1999 | A |
5959316 | Lowery | Sep 1999 | A |
5988925 | Baggett | Nov 1999 | A |
6001671 | Fjelstad | Dec 1999 | A |
6056421 | Johnson et al. | May 2000 | A |
6066861 | Hohn et al. | May 2000 | A |
6069440 | Shimizu et al. | May 2000 | A |
6087202 | Exposito et al. | Jul 2000 | A |
6120600 | Edmond et al. | Sep 2000 | A |
6132072 | Turnbull et al. | Oct 2000 | A |
6139304 | Centofante | Oct 2000 | A |
6153448 | Takahashi et al. | Nov 2000 | A |
6157086 | Weber | Dec 2000 | A |
6187606 | Edmond et al. | Feb 2001 | B1 |
6201262 | Edmond et al. | Mar 2001 | B1 |
6245259 | Hohn et al. | Jun 2001 | B1 |
6252254 | Soules et al. | Jun 2001 | B1 |
6257737 | Marshall et al. | Jul 2001 | B1 |
6274890 | Oshio et al. | Aug 2001 | B1 |
6329224 | Nguyen et al. | Dec 2001 | B1 |
6331063 | Kamada et al. | Dec 2001 | B1 |
6333522 | Inoue et al. | Dec 2001 | B1 |
6338813 | Hsu et al. | Jan 2002 | B1 |
6366018 | Zalmanovich | Apr 2002 | B1 |
6376277 | Corisis | Apr 2002 | B2 |
6404125 | Garbuzov et al. | Jun 2002 | B1 |
6468832 | Mostafazadeh | Oct 2002 | B1 |
6501100 | Srivastava | Dec 2002 | B1 |
6504180 | Heremans et al. | Jan 2003 | B1 |
6522065 | Srivastava | Feb 2003 | B1 |
6531328 | Chen | Mar 2003 | B1 |
6580097 | Soules et al. | Jun 2003 | B1 |
6583444 | Fjelstad | Jun 2003 | B2 |
6624058 | Kazama | Sep 2003 | B1 |
6635263 | Tanida et al. | Oct 2003 | B2 |
6642652 | Collins, III et al. | Nov 2003 | B2 |
6650044 | Lowery | Nov 2003 | B1 |
6653765 | Levinson et al. | Nov 2003 | B1 |
6664560 | Emerson et al. | Dec 2003 | B2 |
6666567 | Feldman et al. | Dec 2003 | B1 |
6686676 | McNulty | Feb 2004 | B2 |
6733711 | Durocher et al. | May 2004 | B2 |
6734033 | Emerson et al. | May 2004 | B2 |
6759266 | Hoffman | Jul 2004 | B1 |
6759723 | Silverbrook | Jul 2004 | B2 |
6791119 | Slater, Jr. et al. | Sep 2004 | B2 |
6791259 | Stokes | Sep 2004 | B1 |
6793371 | Lamke et al. | Sep 2004 | B2 |
6812500 | Reeh et al. | Nov 2004 | B2 |
6849881 | Volker et al. | Feb 2005 | B1 |
6853010 | Slater, Jr. et al. | Feb 2005 | B2 |
6860621 | Bachl et al. | Mar 2005 | B2 |
6919683 | Jang | Jul 2005 | B1 |
6924233 | Chua et al. | Aug 2005 | B1 |
6936862 | Chang et al. | Aug 2005 | B1 |
6939481 | Srivastava | Sep 2005 | B2 |
6958497 | Emerson et al. | Oct 2005 | B2 |
6967116 | Negley | Nov 2005 | B2 |
7023019 | Maeda | Apr 2006 | B2 |
7029935 | Negley et al. | Apr 2006 | B2 |
7042020 | Negley | May 2006 | B2 |
7049159 | Lowery | May 2006 | B2 |
7078737 | Yuri | Jul 2006 | B2 |
7160012 | Hilscher et al. | Jan 2007 | B2 |
7183586 | Ichihara | Feb 2007 | B2 |
7183587 | Negley et al. | Feb 2007 | B2 |
7202598 | Juestel et al. | Apr 2007 | B2 |
7246923 | Conner | Jul 2007 | B2 |
7250715 | Mueller et al. | Jul 2007 | B2 |
7259402 | Edmond et al. | Aug 2007 | B2 |
7286296 | Chaves et al. | Oct 2007 | B2 |
7446343 | Mueller et al. | Nov 2008 | B2 |
7566639 | Kohda | Jul 2009 | B2 |
7601550 | Bogner | Oct 2009 | B2 |
8610145 | Yano | Dec 2013 | B2 |
20010000622 | Reeh et al. | May 2001 | A1 |
20010007484 | Sakamaki | Jul 2001 | A1 |
20010015442 | Kondoh et al. | Aug 2001 | A1 |
20010019177 | Sugihara | Sep 2001 | A1 |
20010038166 | Weber | Nov 2001 | A1 |
20020001869 | Fjelstad | Jan 2002 | A1 |
20020006040 | Kamada et al. | Jan 2002 | A1 |
20020024299 | Okazaki | Feb 2002 | A1 |
20020028527 | Maeda et al. | Mar 2002 | A1 |
20020048905 | Ikegami et al. | Apr 2002 | A1 |
20020056847 | Uemura | May 2002 | A1 |
20020063520 | Yu et al. | May 2002 | A1 |
20020070449 | Yagi et al. | Jun 2002 | A1 |
20020088985 | Komoto et al. | Jul 2002 | A1 |
20020096789 | Bolken | Jul 2002 | A1 |
20020105266 | Juestel et al. | Aug 2002 | A1 |
20020123164 | Slater, Jr. et al. | Sep 2002 | A1 |
20020158578 | Eliashevich et al. | Oct 2002 | A1 |
20020185965 | Collins, III et al. | Dec 2002 | A1 |
20020195935 | Jager et al. | Dec 2002 | A1 |
20030006418 | Emerson et al. | Jan 2003 | A1 |
20030066311 | Li et al. | Apr 2003 | A1 |
20030079989 | Klocke et al. | May 2003 | A1 |
20030121511 | Hashimura | Jul 2003 | A1 |
20030160258 | Oohata | Aug 2003 | A1 |
20030181122 | Collins et al. | Sep 2003 | A1 |
20030207500 | Pichler et al. | Nov 2003 | A1 |
20040004435 | Hsu | Jan 2004 | A1 |
20040012958 | Hashimoto et al. | Jan 2004 | A1 |
20040031952 | Oosedo et al. | Feb 2004 | A1 |
20040037949 | Wright | Feb 2004 | A1 |
20040038442 | Kinsman | Feb 2004 | A1 |
20040041159 | Yuri et al. | Mar 2004 | A1 |
20040041222 | Loh | Mar 2004 | A1 |
20040056260 | Slater et al. | Mar 2004 | A1 |
20040061115 | Kozawa et al. | Apr 2004 | A1 |
20040061433 | Izuno et al. | Apr 2004 | A1 |
20040106234 | Sorg et al. | Jun 2004 | A1 |
20040124429 | Stokes | Jul 2004 | A1 |
20040140765 | Takekuma et al. | Jul 2004 | A1 |
20040164307 | Mueller-Mach et al. | Aug 2004 | A1 |
20040164311 | Uemura | Aug 2004 | A1 |
20040169181 | Yoo | Sep 2004 | A1 |
20040170018 | Nawashiro | Sep 2004 | A1 |
20040173806 | Chua | Sep 2004 | A1 |
20040180475 | Shibata et al. | Sep 2004 | A1 |
20040188697 | Brunner et al. | Sep 2004 | A1 |
20040188698 | Hsing et al. | Sep 2004 | A1 |
20040245530 | Kameyama | Dec 2004 | A1 |
20040256974 | Mueller_Mach et al. | Dec 2004 | A1 |
20040263073 | Baroky et al. | Dec 2004 | A1 |
20050001225 | Yoshimura et al. | Jan 2005 | A1 |
20050002168 | Narhi et al. | Jan 2005 | A1 |
20050021191 | Taniguchi et al. | Jan 2005 | A1 |
20050062140 | Leung et al. | Mar 2005 | A1 |
20050080193 | Wouters et al. | Apr 2005 | A1 |
20050122031 | Itai | Jun 2005 | A1 |
20050145991 | Sakamoto et al. | Jul 2005 | A1 |
20050167682 | Fukasawa | Aug 2005 | A1 |
20050184305 | Ueda | Aug 2005 | A1 |
20050184638 | Mueller | Aug 2005 | A1 |
20050194606 | Oohata | Sep 2005 | A1 |
20050196886 | Jager et al. | Sep 2005 | A1 |
20050219835 | Nagayama | Oct 2005 | A1 |
20050221519 | Leung et al. | Oct 2005 | A1 |
20050243237 | Sasuga | Nov 2005 | A1 |
20050259423 | Heuser et al. | Nov 2005 | A1 |
20050265404 | Ashdown | Dec 2005 | A1 |
20050269592 | Lee et al. | Dec 2005 | A1 |
20060001046 | Batres et al. | Jan 2006 | A1 |
20060001466 | Batres et al. | Jan 2006 | A1 |
20060003477 | Braune | Jan 2006 | A1 |
20060007207 | Kawaguchi | Jan 2006 | A1 |
20060027820 | Cao | Feb 2006 | A1 |
20060060867 | Suehiro | Mar 2006 | A1 |
20060060872 | Edmond et al. | Mar 2006 | A1 |
20060060874 | Edmond et al. | Mar 2006 | A1 |
20060060879 | Edmond et al. | Mar 2006 | A1 |
20060065906 | Harada | Mar 2006 | A1 |
20060091788 | Yan | May 2006 | A1 |
20060102991 | Sakano | May 2006 | A1 |
20060118510 | Hamre et al. | Jun 2006 | A1 |
20060124947 | Mueller et al. | Jun 2006 | A1 |
20060138937 | Ibbetson | Jun 2006 | A1 |
20060145170 | Cho | Jul 2006 | A1 |
20060157721 | Tran et al. | Jul 2006 | A1 |
20060189098 | Edmond | Aug 2006 | A1 |
20060202105 | Krames et al. | Sep 2006 | A1 |
20060267042 | Izuno | Nov 2006 | A1 |
20060284195 | Nagai | Dec 2006 | A1 |
20070012940 | Suh et al. | Jan 2007 | A1 |
20070034995 | Kameyama | Feb 2007 | A1 |
20070037307 | Donofrio | Feb 2007 | A1 |
20070092636 | Thompson et al. | Apr 2007 | A1 |
20070096131 | Chandra | May 2007 | A1 |
20070114559 | Sayers et al. | May 2007 | A1 |
20070138941 | Jin et al. | Jun 2007 | A1 |
20070158668 | Tarsa et al. | Jul 2007 | A1 |
20070158669 | Lee et al. | Jul 2007 | A1 |
20070215890 | Harbers | Sep 2007 | A1 |
20070259206 | Oshio | Nov 2007 | A1 |
20070278502 | Shakuda et al. | Dec 2007 | A1 |
20080006815 | Wang et al. | Jan 2008 | A1 |
20080106893 | Johnson et al. | May 2008 | A1 |
20080149455 | Nagai | Jun 2008 | A1 |
20080173884 | Chitnis et al. | Jul 2008 | A1 |
20080203410 | Brunner et al. | Aug 2008 | A1 |
20080283865 | Yoo | Nov 2008 | A1 |
20090057690 | Chakraborty | Mar 2009 | A1 |
20090086492 | Meyer | Apr 2009 | A1 |
20090101930 | Li | Apr 2009 | A1 |
20090116217 | Teng | May 2009 | A1 |
20090154195 | Ishii et al. | Jun 2009 | A1 |
20090268461 | Deak et al. | Oct 2009 | A1 |
20090322197 | Helbing | Dec 2009 | A1 |
20100213808 | Shi | Aug 2010 | A1 |
20110037084 | Sekii | Feb 2011 | A1 |
20110050098 | Lenk | Mar 2011 | A1 |
20120043886 | Ji et al. | Feb 2012 | A1 |
Number | Date | Country |
---|---|---|
2310925 | Mar 1999 | CN |
2310925 | Mar 1999 | CN |
1372330 | Oct 2002 | CN |
1455960 | Nov 2003 | CN |
1476050 | Feb 2004 | CN |
1547265 | Nov 2004 | CN |
1866561 | Nov 2006 | CN |
19638667 | Apr 1998 | DE |
19945672 | Apr 2000 | DE |
69702929 | Feb 2001 | DE |
102005000800 | Aug 2005 | DE |
102005013265 | Dec 2005 | DE |
102005042814 | Apr 2006 | DE |
102005062514 | Mar 2007 | DE |
102005058127 | Jun 2007 | DE |
102007022090 | Nov 2008 | DE |
0732740 | Sep 1996 | EP |
1017112 | Jul 2000 | EP |
1 059 678 | Dec 2000 | EP |
1059678 | Dec 2000 | EP |
1 138 747 | Oct 2001 | EP |
1138747 | Oct 2001 | EP |
1198016 | Oct 2001 | EP |
198016 | Apr 2002 | EP |
1198005 | Apr 2002 | EP |
1198005 | Apr 2002 | EP |
1367655 | Mar 2003 | EP |
1367655 | Dec 2003 | EP |
1385215 | Jan 2004 | EP |
1395215 | Jan 2004 | EP |
1601030 | Nov 2005 | EP |
1724848 | Nov 2006 | EP |
1724848 | Nov 2006 | EP |
1724848 | Nov 2006 | EP |
1804304 | Apr 2007 | EP |
1935452 | Jun 2008 | EP |
2704690 | Nov 1994 | FR |
61048951 | Mar 1986 | JP |
59027559 | Feb 1987 | JP |
02-086150 | Mar 1990 | JP |
402086150 | Mar 1990 | JP |
4233454 | Aug 1992 | JP |
10107325 | Apr 1998 | JP |
H10107325 | Apr 1998 | JP |
10-163525 | Jun 1998 | JP |
10163525 | Jun 1998 | JP |
10163525 | Jun 1998 | JP |
10247750 | Sep 1998 | JP |
10261821 | Sep 1998 | JP |
H0261821 | Sep 1998 | JP |
11087778 | Mar 1999 | JP |
11276932 | Oct 1999 | JP |
2002101147 | Apr 2000 | JP |
2000-164937 | Jun 2000 | JP |
2000164930 | Jun 2000 | JP |
2000164937 | Jun 2000 | JP |
2001649370 | Jun 2000 | JP |
2000208820 | Jul 2000 | JP |
2000208820 | Jul 2000 | JP |
2002208822 | Jul 2000 | JP |
2000243728 | Aug 2000 | JP |
2000277551 | Oct 2000 | JP |
2000-349346 | Dec 2000 | JP |
2000349346 | Dec 2000 | JP |
2001308116 | Nov 2001 | JP |
2001345480 | Dec 2001 | JP |
2002009097 | Jan 2002 | JP |
2002-050799 | Feb 2002 | JP |
2002-50799 | Feb 2002 | JP |
2002-050799 | Feb 2002 | JP |
200250799 | Feb 2002 | JP |
2002050799 | Feb 2002 | JP |
2002-076446 | Mar 2002 | JP |
2002076445 | Mar 2002 | JP |
2002-118293 | Apr 2002 | JP |
2002118293 | Apr 2002 | JP |
2002118293 | Apr 2002 | JP |
2002-531955 | Sep 2002 | JP |
2002-531956 | Sep 2002 | JP |
2002161325 | Sep 2002 | JP |
2002261325 | Sep 2002 | JP |
2002280607 | Sep 2002 | JP |
2002319704 | Oct 2002 | JP |
2002374006 | Dec 2002 | JP |
2003-007929 | Jan 2003 | JP |
20037929 | Jan 2003 | JP |
2003007929 | Jan 2003 | JP |
2003046141 | Feb 2003 | JP |
2003-115614 | Apr 2003 | JP |
2003110153 | Apr 2003 | JP |
2003115614 | Apr 2003 | JP |
2003-170465 | Jun 2003 | JP |
2003-197655 | Jul 2003 | JP |
2003224307 | Aug 2003 | JP |
2003234511 | Aug 2003 | JP |
2003-526212 | Sep 2003 | JP |
2003-318448 | Nov 2003 | JP |
2003-533852 | Nov 2003 | JP |
2004-031856 | Jan 2004 | JP |
2004-501512 | Jan 2004 | JP |
2004031856 | Jan 2004 | JP |
2004095765 | Mar 2004 | JP |
2004134699 | Apr 2004 | JP |
2004186488 | Jul 2004 | JP |
2004-266240 | Sep 2004 | JP |
2004266240 | Sep 2004 | JP |
3589187 | Nov 2004 | JP |
2004-363342 | Dec 2004 | JP |
2004363342 | Dec 2004 | JP |
2005005604 | Jan 2005 | JP |
2005019838 | Jan 2005 | JP |
2005033138 | Feb 2005 | JP |
2005064113 | Mar 2005 | JP |
2005167079 | Jun 2005 | JP |
2005-252222 | Sep 2005 | JP |
2005252222 | Sep 2005 | JP |
2005298817 | Oct 2005 | JP |
2006032387 | Feb 2006 | JP |
2006054209 | Feb 2006 | JP |
20060495533 | Feb 2006 | JP |
2006080565 | Mar 2006 | JP |
2006114637 | Apr 2006 | JP |
2006165416 | Jun 2006 | JP |
2006245020 | Jun 2006 | JP |
2006-245020 | Sep 2006 | JP |
2006-253370 | Sep 2006 | JP |
2006253370 | Sep 2006 | JP |
2006313886 | Nov 2006 | JP |
2007063538 | Mar 2007 | JP |
2008-129043 | Jun 2008 | JP |
2008532281 | Aug 2008 | JP |
2008-218511 | Sep 2008 | JP |
2000-299334 | Oct 2010 | JP |
200412776 | Feb 2004 | KR |
2004-0017926 | Mar 2004 | KR |
200417926 | Mar 2004 | KR |
200429313 | Apr 2004 | KR |
522423 | Mar 2003 | TW |
581325 | Mar 2004 | TW |
595012 | Jun 2004 | TW |
WO 0033390 | Jun 2000 | WO |
WO 0124283 | Apr 2001 | WO |
WO 0124283 | Apr 2001 | WO |
WO 02061847 | Aug 2002 | WO |
WO 02061847 | Aug 2002 | WO |
WO 03001612 | Jan 2003 | WO |
WO 03021668 | Mar 2003 | WO |
WO 03021691 | Mar 2003 | WO |
WO 2004020704 | Mar 2004 | WO |
WO 2005101445 | Oct 2005 | WO |
WO 2005101909 | Oct 2005 | WO |
WO 2005121641 | Dec 2005 | WO |
WO 2006033695 | Mar 2006 | WO |
WO 2006036251 | Apr 2006 | WO |
WO 2006065015 | Jun 2006 | WO |
WO 2006135496 | Dec 2006 | WO |
WO 2002018560 | Feb 2007 | WO |
WO 2007107903 | Sep 2007 | WO |
WO 2007136956 | Nov 2007 | WO |
WO 2008003176 | Jan 2008 | WO |
WO 2009060356 | May 2009 | WO |
WO 2009093163 | Jul 2009 | WO |
WO 2010035171 | Apr 2010 | WO |
Entry |
---|
Office Action from related U.S. Appl. No. 11/982,276, dated Dec. 7, 2009. |
Office Action from related U.S. Appl. No. 12/077,638, dated Dec. 8, 2009. |
Office Action from related U.S. Appl. No. 11/656,759, dated Nov. 25, 2009. |
Office Action from related U.S. Appl. No. 11/398,214, dated Dec. 11, 2009. |
Office Action from related U.S. Appl. No. 10/666.399, dated Dec. 22, 2009. |
Office Action from related U.S. Appl. No. 11/881,683, dated Feb. 5, 2010. |
Office Action from related U.S. Appl. No. 12/008,477, dated Mar. 1, 2010. |
From related application. Japanese Patent Application No. 2006-526964, Official Notice of Rejection, dated Feb. 16, 2010. |
Patent Abstracts of Japan, Publication No. 2003-258011 dated Sep. 12, 2003. |
Patent Abstracts of Japan, Publication No. 2002-093830 dated Mar. 29, 2002. |
Office Action from related U.S. Appl. No. 10/666,399, dated Nov. 18, 2004. |
Response to related Office Action U.S. Appl. No. 10/666,399, dated Mar. 18, 2005. |
Office Action from related U.S. Appl. No. 10/666,399, dated May 13, 2005. |
Response to related Office Action U.S. Appl. No. 10/666,399, dated Aug. 15, 2005. |
Office Action from related U.S. Appl. No. 10/666,399, dated Sep. 30, 2005. |
Response to related Office Action U.S. Appl. No. 10/666,399, dated Jun. 30, 2006. |
Office Action from related U.S. Appl. No. 10/666,399, dated Feb. 28, 2006. |
Response to related Office Action U.S. Appl. No. 10/666,399, dated Jun. 28, 2006. |
Office Action from related U.S. Appl. No. 10/666,399, dated Aug. 30, 2006. |
Response to related Office Action U.S. Appl. No. 10/666,399, dated Nov. 30, 2006. |
Office Action from related U.S. Appl. No. 10/666,399, dated Feb. 14, 2007. |
Response to related Office Action U.S. Appl. No. 10/666,399, dated Jun. 18, 2007. |
Office Action from related U.S. Appl. No. 10/666,399, dated Jul. 19, 2007. |
Response to related Office Action U.S. Appl. No. 10/666,399, dated Jan. 22, 2008. |
Office Action from related U.S. Appl. No. 10/666,399, dated Sep. 5, 2008. |
Response to related Office Action U.S. Appl. No. 10/666,399, dated Feb. 5, 2009. |
Office Action from related U.S. Appl. No. 10/666,399, dated Mar. 6, 2009. |
Response to related Office Action U.S. Appl. No. 10/666,399, dated Mar. 22, 2010. |
International Search Report and Written Opinion from related PCT Application No. PCT/US2009/001572, dated Jul. 17, 2009. |
International Search Report for PCT/US2007/024367, dated Oct. 22, 2008. |
Official Notice of Rejection dated Jul. 29, 2008, Japanese Patent Application No. 2007-533459. |
Patent Abstracts of Japan 2004-221185 Aug. 5, 2004. |
Patent Abstracts of Japan 11-040858, Feb. 12, 1999. |
Patent Abstract of Japan 2001-181613, Jul. 3, 2001. |
Lau, John, “Flip-Chip Technologies”, McGraw Hill, 1996. |
International Materials Reviews, “Materials for Field Emission Displays”, A.P. Burden 2001. |
PCT Search Report and Written Opinion for PCT Application No. US2007/007600, dated Oct. 31, 2007. |
Nichia Corp.White LED, Part Nos. NSPW300BS, NSPW312BS, p. 1-3, 2000. |
NPO-30394, Electrophoretic Deposition for Fabricating Microbatteries, p. 1-2, NASA Tech Briefs Issue. May 3, 2003. |
Examination of related European Application No. 05 808 825.3-2203, dated Mar. 18, 2009. |
Official Notice of Final Decision of Rejection re: related Japanese Patent Application No. 2007-533459, dated Dec. 26, 2008. |
Rejection Decision re: related Chinese Patent Application No. 200580031382.3, dated Feb. 2, 2009. |
Communication pursuant to Article 94(3) EPC re: related European Application No. 05808825.3, dated Feb. 18, 2009. |
Notice on Reexamination for Chinese Patent Application No. 200580031382.3 dated May 28, 2010. |
Patent Abstracts of Japan No. 2002-050799 dated Feb. 15, 2002 to Stanley Electric Co. Ltd. |
Office Action from Japanese Patent Application No. 2007-533459 (Appeal No. 2009-006588) dated Jul. 16, 2010. |
Office Action from Chinese Patent Application No. 200780012387.0 dated Jun. 30, 2010. |
Summons for Oral Proceedings for European Patent Application No. 05808825.3 dated Sep. 9, 2010. |
Notification of the First Office Action for Chinese Patent Application No. 200780050127.2 dated Aug. 8, 2010. |
Notice of Rejection for counterpart counterpart Japanese Patent Application No. 2006-526964 dated Oct. 5, 2010. |
Notification of the First Office Action for Chinese Patent Application No. 200780050197.8 dated Sep. 9, 2010. |
Reexamination Decision No. 27346 for Chinese Patent Application No. 200580031382.3 dated Oct. 27, 2010. |
Office Action from U.S. Appl. No. 11/982,276, dated Mar. 25, 2010. |
Office Action from U.S. Appl. No. 11/827,626, dated Apr. 1, 2011. |
Notice of Allowance from U.S. Appl. No. 10/666,399, dated Oct. 14, 2010. |
Response to Office Action U.S. Appl. No. 12/077,638, OA dated Jul. 1, 2010, Resp. filed Aug. 30, 2010. |
Response to Office Action U.S. Appl. No. 11/656,759, OA dated Nov. 25, 2009, Resp. filed Apr. 26, 2010. |
Response to Office Action U.S. Appl. No. 11/899,790, OA dated Jun. 2, 2010, Resp. filed Nov. 1, 2010. |
Response to Office Action U.S. Appl. No. 10/666,399, OA dated Dec. 22, 2009, Resp. filed Mar. 22, 2010. |
Office Action from U.S. Appl. No. 11/881,683, dated Oct. 14, 2010. |
Office Action from U.S. Appl. No. 11/899,790, dated Mar. 21, 2011. |
Office Action from U.S. Appl. No. 12/077,638, dated Sep. 22, 2010. |
Response to Office Action U.S. Appl. No. 11/398,214, OA dated Dec. 11, 2009, Resp. filed Mar. 2, 2010. |
Response to Office Action U.S. Appl. No. 10/666,399, OA dated May 11, 2010, Resp. filed Aug. 11, 2010. |
Response to Office Action U.S. Appl. No. 12/008,477, OA dated Mar. 1, 2010, Resp. filed May 26, 2010. |
Response to Office Action U.S. Appl. No. 11/982,276, OA dated Mar. 25, 2010, Resp. filed Jun. 21, 2010. |
Response to Office Action U.S. Appl. No. 11/881,683, OA dated May 12, 2010, Resp. filed Aug. 3, 2010. |
Office Action from U.S. Appl. No. 11/982,276, dated Feb. 18, 2010. |
Office Action from U.S. Appl. No. 11/398,214, dated Nov. 12, 2010. |
Office Action from U.S. Appl. No. 11/656,759, dated May 21, 2010. |
Office Action from U.S. Appl. No. 11/656,759, dated Mar. 9, 2011. |
Office Action from U.S. Appl. No. 12/077,638, dated Dec. 21, 2010. |
Response to OA from U.S. Appl. No. 11/595,720, dated May 14, 2010, filed Jul. 6, 2010. |
Office Action from U.S. Appl. No. 11/982,276, dated Aug. 19, 2010. |
Office Action from U.S. Appl. No. 12/077,638, dated Jul. 7, 2010. |
Office Action from U.S. Appl. No. 10/666,399, dated May 11, 2010. |
Response to OA from U.S. Appl. No. 12/077,638, OA dated Dec. 9, 2009, filed Feb. 26, 2010. |
Response to OA from U.S. Appl. No. 11/982,276, OA dated Dec. 7, 2009, filed Feb. 5, 2010. |
Response to OA from U.S. Appl. No. 11/982,276, OA dated Aug. 19, 2010, filed Nov. 2, 2010. |
Office Action from U.S. Appl. No. 11/595,720, dated May 14, 2010. |
Office Action from U.S. Appl. No. 11/827,626, dated Oct. 7, 2010. |
Office Action from U.S. Appl. No. 12/008,477, dated Oct. 7, 2010. |
Office Action from U.S. Appl. No. 11/881,683, dated May 12, 2010. |
Office Action from U.S. Appl. No. 11/899,790, dated Jun. 2, 2010. |
First Office Action for European Patent Application No. 07754163.9 dated Feb. 28, 2011. |
Notice of Rejection (Final) in counterpart Japanese Patent Application No. 2006-526964 dated Feb. 22, 2011. |
Minutes of Oral Proceedings (EPO Form 2009) in European Patent Application No. 05808825.3 dated Feb. 3, 2011. |
Summons to Attend Oral Proceedings in European Patent Application No. 05808825.3 dated Feb. 3, 2011. |
Office Action from counterpart Taiwan Patent Application No. 093128231 dated Apr. 21, 2011. |
Examination Report for European Application No. 04 783 941.0-2203, dated Mar. 22, 2012. |
Notification of First Office Action from Chinese Application No. 201010279016.21, dated Feb. 28, 2012. |
Notification of the Third Office Action from Chinese Application No. 200780050127.2, dated Mar. 28, 2012. |
Decision of Rejection from Japanese Application No. 2009-547218, dated Mar. 8, 2012. |
Decision of Rejection from Japanese Application No. 2009-547219, dated Mar. 8, 2012. |
Extended European Search Report Application No. 10012027.8-2203/2306526, dated Mar. 30, 2012. |
Office Action for Taiwan Patent Application No. 094122646, dated Feb. 20, 2012. |
Examination Report for European Application No. 08 171 399.2-2222, dated Mar. 26, 2012. |
Notification of the First Office Action in Chinese Patent Application No. 201110029365.3 dated Jan. 4, 2012. |
International Search Report and Written Opinion from Application No. PCT/US2011/001214, dated Mar. 21, 2012. |
Notification of the First Office Action, Chinese Patent Application No. 201010279016.2, dated Feb. 28, 2012. |
Office Action U.S. Appl. No. 12/008,477, dated Apr. 12, 2011. |
Response to Office Action U.S. Appl. No. 12/008,477, filed Jun. 27, 2011. |
Office Action U.S. Appl. No. 11/899,790, dated Jul. 27, 2011. |
Response to Office Action U.S. Appl. No. 11/899,790, filed Nov. 22, 2011. |
Office Action U.S. Appl. No. 12/287,764, dated Jul. 30, 2010. |
Response to Office Action U.S. Appl. No. 12/287,764, filed Nov. 30, 2010. |
Office Action U.S. Appl. No. 11/956,989, dated Apr. 16, 2010. |
Response to Office Action U.S. Appl. No. 11/956,989, filed Jun. 14, 2010. |
Response to Office Action U.S. Appl. No. 11/956,989, filed Jul. 14, 2010. |
Office Action U.S. Appl. No. 12/287,764, dated Mar. 25, 2010. |
Response to Office Action U.S. Appl. No. 12/287,764, filed Jul. 21, 2010. |
Office Action U.S. Appl. No. 12/287,764, dated May 17, 2011. |
Response to Office Action U.S. Appl. No. 12/287,764, filed Oct. 10, 2011. |
Office Action U.S. Appl. No. 13/072,371, dated Oct. 5, 2011. |
Response to Office Action U.S. Appl. No. 13/072,371, filed Dec. 23, 2011. |
Office Action U.S. Appl. No. 11/656,759, dated Sep. 23, 2011. |
Response to Office Action U.S. Appl. No. 11/656,759, filed Jan. 16, 2012. |
Office Action U.S. Appl. No. 12/008,477, dated Sep. 19, 2011. |
Response to Office Action U.S. Appl. No. 12/008,477, filed Jan. 25, 2012. |
Office Action U.S. Appl. No. 12/862,640, dated Aug. 19, 2011. |
Response to Office Action U.S. Appl. No. 12/862,640, filed Feb. 21, 2012. |
Office Action U.S. Appl. No. 12/287,764, dated Oct. 26, 2011. |
Response to Office Action U.S. Appl. No. 12/287,764, filed Mar. 6, 2012. |
Office Action U.S. Appl. No. 11/899,790, dated Jan. 12, 2012. |
Response to Office Action U.S. Appl. No. 11/899,790, filed Mar. 8, 2012. |
Office Action U.S. Appl. No. 12/862,640, dated Mar. 9, 2012. |
Office Action U.S. Appl. No. 12/287,764, dated Jan. 13, 2011. |
Response to Office Action U.S. Appl. No. 12/287,764, filed May 5, 2011. |
Second Office Action for Chinese Patent Application No. 200780050127.2 dated Jun. 15, 2011. |
International Preliminary Examination Report for PCT Application No. PCT/US07/24366 dated Jun. 29, 2011. |
International Preliminary Examination Report for PCT Application No. PCT/US07/24367 dated Jun. 29, 2011. |
Decision to Refuse a European Patent Application regarding EP 05 808 825.3 dated Jun. 14, 2011. |
Office Action for Korean Patent Application No. 10-2007-7008694 dated Aug. 7, 2011. |
Notice of Rejection of counterpart Japanese Patent Application No. 2006-526964 dated Sep. 13, 2011. |
Notification of Reasons for Rejection for Japanese Patent Application No. 2009-547219 dated Sep. 16, 2011. |
Notification of Reasons for Rejection for Japanese Patent Application No. 2009-547218 dated Sep. 16, 2011. |
Notice of Reasons for Rejection for Japanese Patent Application No. JP 2008-317576 dated Sep. 13, 2011. |
Notification of Reasons for Rejection for Japanese Patent Appl. No. 2011-279356, dated Jan. 23, 2013. |
Office Action from Japanese Office Action. Application No. 2011-224055, dated Feb. 7, 2013. |
Notice of Reasons for Rejection from Japanese Patent appl. No. 2012-026326, dated May 28, 2013. |
Notice of Reasons for Rejection from Japanese Patent appl. No. 2012-026327, dated May 28, 2013. |
Rejection Decision from Taiwanese Patent Appl. No. 094122646, dated Dec. 14, 2012. |
Decision of Rejection from Japanese Patent Appl. No. 2008-317576, dated Dec. 18, 2012. |
Decision of Rejection from Japanese Patent Appl. No. 2006-526964, dated Dec. 18, 2012. |
Notice of Results of Re-Consideration Prior to Appeal from Korean Patent Application No. 10-2007-7008694, dated Sep. 21, 2012. |
Rejection Decision for Chinese Patent Application No. 201110029365.3, dated Sep. 10, 2012. |
Noting of Loss of Rights from European Application No. 04783941.0-2203/1665361, dated Nov. 6, 2012. |
Second Office Action from Chinese Patent Application No. 20101029016.2, dated Dec. 24, 2012. |
Official Action from European Patent Application No. 07874432.3, dated Nov. 13, 2012. |
Official Action from European Patent Application No. 07840092.6, dated Nov. 13, 2012. |
Rejection Decision from Chinese Patent Appl. No. 201010279016.2, dated Jun. 21, 2013. |
Examination Report from European Patent Appl. No. 04 783 941.0-1555, dated Jul. 25, 2013. |
Office Action from Korean Patent Appl. No. 10-2009-7017405, dated Oct. 23, 2013. |
Appeal Decision to Grant a Patent from Japanese Patent No. 2007-506279, dated Oct. 28, 2013. |
Office Action from U.S. Appl. No. 13/072.371, dated Mar. 29, 2012. |
Response to OA from U.S. Appl. No. 13/072,371, filed May 16, 2012. |
Office Action from U.S. Appl. No. 11/656,759, dated May 1, 2012. |
Response to OA from U.S. Appl. No. 11/656.759, filed Jun. 26, 2012. |
Office Action from U.S. Appl. No. 12/862,640, dated Jun. 29, 2012. |
Response to OA from U.S. Appl. No. 12/862,640, filed Sep. 20, 2012. |
Office Action from U.S. Appl. No. 13/072,371, dated Jul. 23, 2012. |
Response to OA from U.S. Appl. No. 13/072,371, filed Oct. 17, 2012. |
Office Action from U.S. Appl. No. 12/842,639, dated Aug. 14, 2012. |
Response to OA from U.S. Appl. No. 12/842,639, filed Nov. 9, 2012. |
Office Action from U.S. Appl. No. 12/862,640, dated Oct. 2, 2012. |
Response to OA from U.S. Appl. No. 12/862,640, filed Apr. 17, 2013. |
Office Action from U.S. Appl. No. 11/899,790, dated Dec. 5, 2012. |
Response to OA from U.S. Appl. No. 11/899,790, filed Feb. 27, 2013. |
Office Action from U.S. Appl. No. 12/862,640, dated Jan. 24, 2013. |
Office Action from U.S. Appl. No. 13/072,371, dated Jan. 30, 2013. |
Response to OA from U.S. Appl. No. 13/072,371, filed Apr. 22, 2013. |
Office Action from U.S. Appl. No. 11/656,759, dated Feb. 13, 2013. |
Response to OA from U.S. Appl. No. 11/656,759, filed May 13, 2013. |
Office Action from U.S. Appl. No. 11/656,759, dated Jul. 2, 2013. |
Response to OA from U.S. Appl. No. 11/656.759, filed Aug. 21, 2013. |
Office Action from U.S. Appl. No. No. 11/899,790, dated May 1, 2013. |
Response to OA from U.S. Appl. No. 11/899,790, filed Jun. 18, 2013. |
Office Action from U.S. Appl. No. 13/072,371, dated Apr. 30, 2013. |
Office Action from U.S. Appl. No. 12/862,640, dated Apr. 30, 2013. |
Office Action from U.S. Appl. No. 12/842,639. dated Mar. 7, 2013. |
Response to OA from U.S. Appl. No. 12/842,639, filed Jun. 5, 2013. |
Office Action from U.S. Appl. No. 11/899,790, dated Sep. 17, 2013. |
Office Action from U.S. Appl. No. 12/008,477, dated Sep. 3, 2013. |
Interrogation from Japanese Patent Appl. No. 2008-317576, dated Jul. 9, 2013. |
Decision of Final Rejection from Japanese Patent Appl. No. 2011-224055, dated Jul. 26, 2013. |
Decision of Rejection from Japanese Patent appl. No. 2011-279356, dated Jul. 31, 2013. |
Notice of Rejection from Japanese Patent Appl. No. 2008-527912, dated Jun. 5, 2013. |
Notice of Rejection from Japanese Patent Appl. No. 2008-527912 dated Jun. 14, 2011. |
International Preliminary Report on Patentability from Appl. No. PCT/US06/24884 dated Jun. 12, 2008. |
Nichia Corp. White LED, Part No. NSPW312BX, “Specification for Nichia White LED, Model N5W312BS”, pp. 1-14, 2004. |
Nichia Corp. White LED, Part No. NSPW300BS. Specifications for Nichia White LED. Model NSPW300BS, pp. 1-14, 2004. |
Office Action from Japanese Patent Appl. No. 2007-216808, dated Sep. 6, 2010. |
Office Action from Japanese Patent Appl. No. 2011-224055, dated Jan. 12, 2012. |
Decision of Final Rejection from Japanese Patent Appl. No. 2007-216808, dated Jan. 1, 2011. |
Office Action from German Patent Appl. No. 10 2007 040 841.4-33, dated Sep. 17, 2009. |
Office Action from German Patent Appl. No. 10 2007 040 811.2, dated Sep. 17, 2009. |
Office Action from Chinese Patent Appl. No. 20070148326.9, dated Jun. 19, 2009, 2 pages. |
Schubert, “Light-Emitting Diodes”, Cambridge University Press. 2003, pp. 92-96. |
First Office Action and Search Report from Chinese Patent Application No. 201210030627.2, dated Dec. 3, 2012. |
Notice of Allowance from Korean Patent Appl. No. 10-2009-7017405, dated Feb, 18, 2014. |
Search Report from Taiwanese Patent appl. No. 096143968, dated Feb. 17, 2014. |
Decision of Rejection from Japanese Patent Appl. No. 2012-026327, dated Apr. 8, 2014. |
Brief Summary of Rejection Decision from Chinese Patent Appl. No. 201010279016.2 dated Apr. 22, 2014. |
Preliminary Report from Japanese Patent Appl. No. 2013-020955 dated Dec. 26, 2013 (received May 8, 2014). |
Preliminary Report from Japanese Patent Appl. No. 2013-024242 dated Feb. 26, 2014 (received May 8, 2014). |
Office Action from Korean Patent Appl. No. 10-2009-7017407, dated Apr. 28, 2014. |
Notification of Reexamination from Chinese Patent appl. No. 201110029365.3 dated May 7, 2014. |
Office Action from U.S. Appl. No. 13/429,053, dated Apr. 11, 2014. |
Office Action from U.S. Appl. No. 12/008,477, dated Apr. 25, 2014. |
Response to OA from U.S. Appl. No. 12/008,477, filed May 27, 2014. |
Office Action from U.S. Appl. No. 13/072,371, dated Apr. 29, 2014. |
Office Action from U.S. Appl. No. 11/656,759, dated May 27, 2014. |
Office Action (Brief Description of) from Chinese Patent Appl. No. 201010279016.2, dated Jan. 10, 2014. |
IPT's Decision from Korean Patent Appl. No. 10-2007-7008694, dated Dec. 24, 2013. |
Office Action from U.S. Appl. No. 12/862,640, dated Dec. 20, 2013. |
Office Action from U.S. Appl. No. 11/656,759, dated Nov. 18, 2013. |
Decision of Rejection from Japanese Patent appl. No. 2012-02326, dated Apr. 8, 2014. |
First Office Action and Search Report from Chinese Patent Appl. No. 2012-10175686.9, dated Mar. 31, 2014. |
Translation of Office Action from Taiwanese Patent Appl. No. 096143968, dated Feb. 13, 2014. |
Office Action from U.S. Appl. No. 11/699,790, dated Feb. 25, 2014. |
Notification of Reexamination from Chinese Patent Appl. No. 200780050127.2, dated Jun. 3, 2014. |
Notification of Allowance from Taiwan Patent Appl. No. 101130701, dated Jul. 15, 2014. |
Office Action and Search Report from Taiwan Patent Appl. No. 097110195, dated Jul. 18, 2014. |
Board Decision from Chinese Patent Appl. No. 201110029365.3, dated Aug. 13, 2014. |
Second Office Action from Chinese Patent Appl. No. 201210175686.9, dated Sep. 3, 2014. |
Office Action from Taiwanese Patent Appl. No. 097110195, dated Sep. 9, 2014. |
Office Action from U.S. Appl. No. 12/842.639, dated Aug. 6, 2014. |
Office Action from U.S. Appl. No. 13/017,845, dated Sep. 11, 2014. |
Fourth Examination from European Patent Appl. No. 04 781 941.0-1552, dated Oct. 7, 2014. |
Summons to attend oral proceedings from European Patent Appl. No. 411.52.106724/0, dated Sep. 9, 2014. |
Office Action from U.S. Appl. No. 11/899,790, dated Jun. 25, 2014. |
Notice of Final Rejection from Korean Appl. No. 10-2009-7017407, dated Feb. 27, 2015. |
Notice of Allowance from Taiwanese Appl. No. 096143968, dated Mar. 10, 2015. |
Office Action from U.S. Appl. No. 12/842,639, dated Mar. 17, 2015. |
Reexamination Decision from Chinese Patent Appl. No. 200780050127.2, dated Jan. 5, 2015. |
Office Action from U.S. Appl. No. 14/209,652, dated Dec. 12, 2014. |
Letter regarding unfavorable decision on appeal from Japanese Appl. No. 2011-279356, dated Nov. 12, 2014. |
Preliminary Examination Report from Japanese Appl. No. 2012-026326, dated Oct. 1, 2014. |
Third Office Action from Chinese Appl. No. 201210175686.9, dated Dec. 11, 2014. |
Office Action from U.S. Appl. No. 13/429,053, dated Sep. 22, 2014. |
Office Action from U.S. Appl. No. 12/862,640, dated Oct. 17, 2014. |
Notification of re-examination from Chinese Appl. No. 201010279016.2, dated Jan. 9, 2015. |
Summons to attend Oral Proceedings from European Appl. No. 08171399.2, dated Jan. 16, 2015. |
Decision of Re-Examination from Chinese Appl. No. 201080001658.4, dated Dec. 29, 2014. |
Notice of Allowance from Taiwanese Patent appl. No. 097110195, dated Apr. 30, 2015. |
Office Action from Taiwanese Patent Appl. No. 100107044 dated Jun. 4, 2015. |
Office Action from German Patent Appl. No. 11 2006 002 251.2, dated Jul. 8, 2015. |
Notice of Allowance from Korean Patent Appl. No. 9-5-2015-047659777, dated Jul. 16, 2015. |
Communication of Intention to Grant and Minutes from European Appl. No. 08 171 399.2-1554, dated Jun. 19, 2015. |
Decision of Rejection Letter from Chinese Patent Appl. No. 201010279016.2, dated Jun. 3, 2015. |
Fourth Office Action from Chinese Patent Appl. No. 201210175686.9, dated Jul. 9, 2015. |
Office Action from U.S. Appl. No. 12/862,640, dated Jun. 5, 2015. |
Examination from European Patent Appl. No. 07 874 432.3-1551, dated Dec. 15, 2015. |
Office Action from U.S. Appl. No. 14/494,795: dated Dec. 23, 2015. |
Examination Report from European Patent Appl. No. 07840092.6, dated Feb. 23, 2016. |
Office Action from U.S. Appl. No. 12/542,639; dated May 5, 2016. |
Notice of Reasons for Rejection from Japanese Patent Appl. No. 2012-26327, dated Nov. 17, 2015. |
Notice of Allowance from Chinese Patent Appl. No. 201210175686.9, dated Dec. 1, 2015. |
Summons to Attend Oral Proceedings from European Patent Appl. No. 05808825/1797597, dated Nov. 17, 2015. |
Office Action from U.S. Appl. No. 14/446,240, dated Aug. 5, 2015. |
Office Action from U.S. Appl. No. 12/862,640, dated Oct. 23, 2015. |
Notice for Rejection for Japanese Application No. 2012-026327; dated Jul. 5, 2016. |
Foreign Office Action for European Application No. 07874432.3: dated Oct. 17, 2016. |
Office Action for U.S. Appl. No. 12/842,639; dated Oct. 27, 2016. |
Office Action for U.S. Appl. No. 12/506,969; dated Dec. 19, 2016. |
Appeal Decision for Japanese Application No. 2012-26327: dated Oct. 27, 2016. |
Office Action for U.S. Appl. No. 12/862,640; dated Oct. 4, 2017. |
Office Action for U.S. Appl. No. 12/842,639; dated Dec. 11, 2017. |
Summons to Attend Oral Proceedings for European Application No. 07840092.6; Dated Feb. 14, 2018. |
Office Action for U.S. Appl. No. 12/842,639; dated Jul. 2, 2018. |
Examination from European Appl. No. 04 783 941.0-1552, dated Mar. 6, 2014. |
Office Action and Search Report from Taiwanese Patent Appl. No. 101130701, dated Feb. 6, 2014. |
Search Report from Taiwanese Patent Appl. No. 097110195, dated Mar. 12, 2014. |
Number | Date | Country | |
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20090278156 A1 | Nov 2009 | US |
Number | Date | Country | |
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Parent | 10666399 | Sep 2003 | US |
Child | 12506989 | US |