Patent Application
20170052290
The present invention relates to a multilayer film reflective mirror that is suitably used to reflect short-wavelength light such as soft X-ray or extreme ultraviolet light, a manufacturing method and a regenerating method of this multilayer film reflective mirror, an optical system including this multilayer film reflective mirror, an exposure apparatus including this multilayer film reflective mirror and a device manufacturing method using this exposure apparatus, for example.
A wavelength of exposure light for an exposure apparatus that is used in a photolithography process for manufacturing an electrical device (a micro device) such as a semiconductor device becomes shorter in association with a progress of a miniaturization of the electrical device. Nowadays, an exposure apparatus that uses, as the exposure light, soft X-ray whose wavelength is about 11 to 14 nanometer has been developed. The soft X-ray is included in Extreme Ultraviolet Light (hereinafter, it is referred to as “EUV light”) that is a light whose wavelength is equal to or less than about 105 nanometer, and thus, the exposure apparatus that uses the soft X-ray or the EUV light as the exposure light is referred to as an “EUV exposure apparatus”.
There is no substance having high transparency with respect to wavelength range of the EUV light including the soft X-ray and a conventional refracting optical element cannot be used. Therefore, a multilayer film reflective mirror is used as an optical member for the EUV exposure apparatus, wherein the multilayer film reflective mirror includes a reflecting surface of a multilayer film that is formed by alternately layering two types of materials between which amplitude reflectance is relatively large at an interface. For example, at the wavelength range in the vicinity of 13.5 nanometer, when the multilayer film that is formed by alternately layering a Molybdenum layer and a Silicon layer is used, reflectance that is equal to or more than about 60% can be realized in a condition where the light enters vertically (for example, see a Patent Literature 1).
Moreover, the EUV exposure apparatus is located in a vacuum chamber. If the EUV light is irradiated to the multilayer film reflective mirror in an environment in the chamber in which a slight amount of silicon carbide remains, the silicon carbide that has been absorbed on a surface (a reflecting surface) of the multilayer film reflective mirror is degraded by photoelectron and the surface is contaminated by carbon (contaminated object). Moreover, if the EUV light is irradiated to the multilayer film reflective mirror in an environment in which water vapor remains, water molecule that has been absorbed on the surface of the multilayer film reflective mirror is degraded by the photoelectron and thereby oxygen is generated, and the generated oxygen forms oxide film on the surface of the multilayer film reflective mirror. Moreover, tin (Sn) and the like that is used as a material for plasma for a light source may gradually attach to the surface of the multilayer film reflective mirror that is used as a collector mirror for an EUV light source. If an extraneous material such as the carbon, the oxide film or the tin attaches to the surface of the multilayer film reflective mirror as described above, the reflectance is reduced and thus a throughput (a productivity) of the EUV exposure apparatus is reduced. Thus, when the reflectance of the multilayer film reflective mirror is reduced to be equal to or less than a predetermined value, it needs to be replaced by new multilayer film reflective mirror.
However, a substrate of the multilayer film reflective mirror is processed with high accuracy and is a high price member, and thus, it is desired that the substrate be reused by detaching the multilayer film when the reflectance is reduced due to the attachment of the extraneous material to the multilayer film. Therefore, a multilayer film reflective mirror that includes a detachable layer formed between the substrate and the multilayer film is proposed, wherein this multilayer film reflective mirror allows the multilayer film on the detachable layer to be detached and removed by dissolving the detachable layer with acid or the like when the reflectance of the multilayer film is reduced and thus the substrate is reusable (for example, see the Patent Literature 1, a Patent Literature 2 or a Patent Literature 3).
Patent Literature 1: Japanese Unexamined Patent Application Publication No. 2005-098930
Patent Literature 2: Japanese Unexamined Patent Application Publication No. 2007-101349
Patent Literature 3: Japanese Unexamined Patent Application Publication No. 2007-127698
One aspect of the present invention provides a multilayer film reflective mirror for reflecting incident light, the multilayer film reflective mirror is provided with: a substrate; a first multilayer film that is formed by alternately layering a first material and a second material on a surface of the substrate; a first detachable layer that is formed on the first multilayer film and that is detachable from the first multilayer film; and a second multilayer film that is formed by alternately layering the first material and the second material on the first detachable layer, the second multilayer film is removable with the first detachable layer by detaching the first detachable layer.
A second aspect provides a manufacturing method of a multilayer film reflective mirror for reflecting incident light, the manufacturing method is provided with: forming a first multilayer film on a surface of a substrate by alternately layering a first material and a second material; forming a first detachable layer on the first multilayer film so that the first detachable layer is detachable from the first multilayer film; and forming a second multilayer film on the first detachable layer by alternately layering the first material and the second material
A third aspect provides an optical system including a plurality of optical members that are placed on an optical path of incident light, at least one of the plurality of optical members is the multilayer film reflective mirror of the aspect of the present invention.
A fourth aspect provides an exposure apparatus that is configured to illuminate a pattern by exposure light from a light source through an illumination system and to expose a substrate by the exposure light through the pattern and a projection optical system, at least one of the light source, the illumination system and the projection optical system includes the multilayer film reflective mirror of the aspect of the present invention.
A fifth aspect provides a regenerating method of a multilayer film reflective mirror, the regenerating method is provided with: preparing the multilayer film reflective mirror of the aspect of the present invention; and adding remover to the multilayer film reflective mirror to remove the detachable layer of the multilayer film reflective mirror and a multilayer film formed on the detachable layer.
A sixth aspect provides a device manufacturing method is provided with: exposing a photosensitive substrate by using the exposure apparatus of the aspect of the present invention; and processing the exposed photosensitive substrate.
According to the conventional multilayer film reflective mirror, although the substrate is reusable after the reflectance is reduced, it is required that the multilayer film is formed again on the substrate in order to regenerate the multilayer film reflective mirror. Therefore, there is a technical problem that it takes time for a process of regenerating the multilayer film reflective mirror and a cost for regenerating the multilayer film reflective mirror is also large.
With reference to
In
The surface 1a of the substrate 1 may be a planar surface, however, the surface 1a may be processed to be a convex or concave spherical surface or a non-spherical surface depending on a use application of the multilayer film reflective mirror 10. A silicon, a low thermal expansion metal or the like can be also used as a material of the substrate 1.
Moreover, a sum (=d1+d2) of the thickness d1 of the Mo layer 2 and the thickness d2 of the Si layer 3 is a cycle length p1 of the multilayer film 4. In the present embodiment, a cycle length of the multilayer film 6 is also p1 that is same as the cycle length of the multilayer film 4. As one example, the thickness d1 is 2.76 nanometer, the thickness d2 is 4.14 nanometer, the cycle length P1 is 6.9 nanometer and a thickness ratio of the Mo layer 2 (=d1/p1) is 0.39. In this case, reflectance becomes high when the light whose wavelength λ is about 13.5 nanometer enters the multilayer film 4 or 6 almost vertically. The cycle length p1 and/or the thickness ratio of the Mo layer 2 may be adjusted so that the reflectance is maximized depending on an average incident angle of the light that enters the surface 1a of the substrate 1, when the light does not enters almost vertically. Moreover, as one example, the number of layers each of which includes one Mo layer 2 and one Si layer 3 (hereinafter, this layer is referred to as a “one-cycle layer”) in the first multilayer film 4 is fifty (there are fifty Mo layers 2 and fifty Si layers 3). On the other hand, the number of the one-cycle layers in the second multilayer film 6 is thirty, and the Si layer 3 having the thickness d2 is formed at a top layer of the multilayer film 6. Hereinafter, the number of the one-cycle layers in each of the multilayer films 4 and 6 is simply referred to as a “layer number”. In the present embodiment, the layer number in the second multilayer film 6 is set to be less than the layer number in the first multilayer film 4. Moreover, a top layer in the first multilayer film 4 (a layer that contacts the detachable layer 5) is the Si layer 3 and a bottom layer in the second multilayer film 6 (a layer that contacts the detachable layer 5) is also the Si layer 3.
Moreover, it is preferable that a material of the detachable layer 5 be a material that is dissolved by acid (for example, nitric acid) more easily than the Molybdenum and the Silicon which constitute the multilayer films 4 and 6. As one example, an alloy (Cu—Ag alloy) that includes Copper (Cu) whose weight percent (wt %) is 95% and Silver (Ag) whose weight percent (wt %) is 5% can be used as this material of the detachable layer 5. An alloy (Cu—Al alloy) that includes Copper and Aluminum (Al), an alloy (Al—Ag alloy) that includes Aluminum and Silver or the like can be also used as the material of the detachable layer 5. A material including at least one type of metal that is dissolved by the acid more easily than the multilayer films 4 and 6 may be used as the material of the detachable layer 5.
Moreover, in an example illustrated in
d3=p1+d1 (1)
When the thickness d1 is 2.76 nanometer and the cycle length p1 is 6.9 nanometer, the thickness d3 is 9.66 nanometer. In this case, if a position of the second multilayer film 6 is displaced in a depth direction by an integral multiple of the cycle length p1, positions of the Mo layers 2 and the Si layers 3 in the multilayer film 6 overlap positions of the Mo layers 2 and the Si layers 3 in the first multilayer film 4, respectively. In other words, each of the multilayer films 4 and 6 can be regarded as one portion of one multilayer film in which the Mo layers 2 and the Si layers 3 are layered with the cycle length p1 on the substrate 1, as illustrated in
As a result, a phase of the light EL2 having the wavelength λ that is reflected by the first multilayer film 4 through the second multilayer film 6 and the detachable layer 5 becomes same as a phase of the light EL1 having the wavelength λ that is reflected by the second multilayer film 6 and both lights amplify each other, and thus the reflectance becomes high.
Moreover, a center position 5c of the detachable layer 5 along the thickness direction is at a position that is away from a center position 3c of each Si layer 3 of the first multilayer film 4 along a layering direction (the thickness direction) by the integral multiple (double in
Moreover, a solid curved line C1 represents a variation of the reflectance of the multilayer film reflective mirror 10 when the above described detachable layer 5 is formed on the first multilayer film 4 in which the layer number is fifty and then the second multilayer film 6 is formed thereon and the layer number of the multilayer film 6 is increased. The curves line C1 indicates that the reflectance decreases to about 29.5% when the detachable layer 5 is formed, however, the reflectance is saturated when about thirty layers that is less than the layer number of the first multilayer film 4 are layered by increasing the layer number of the second multilayer film 6 layered it and saturated reflectance is about 73.9%. As described above, setting the layer number of the second multilayer film 6 to about thirty results in the reflectance that is substantially same as the reflectance in the case where there is only the first multilayer film 4 in which the layer number is fifty. Based on the above described consideration, the layer number of the first multilayer film 4 is set to fifty and the layer number of the second multilayer film 6 is set to thirty in the present embodiment.
Next, with reference to a flowchart in
Next, as illustrated in
Next, with reference to a flowchart in
At next step 122, as one example, a light amount of the illumination light per unit time is regularly measured at an illuminated surface or the like of the optical system (at a downstream position of the multilayer film reflective mirror 10) for example, and it is determined that the reflectance of the multilayer film reflective mirror 10 is reduced to be equal to or less than a non-usable value (a predetermined value) when the measured light amount decreases to be equal to or less than a predetermined ratio with respect to an initial value. When the reflectance of the multilayer film reflective mirror 10 is reduced to be equal to or less than the non-usable value, the usage of the optical system is terminated and a reflectance recovering step for the multilayer film reflective mirror 10 at a step 124 is performed.
Then, the multilayer film reflective mirror 10 is pulled-out from the optical system, the pulled-out multilayer film reflective mirror 10 is held by a holder whose material is not dissolved by the nitric acid, and the multilayer film reflective mirror 10 is immersed in nitric acid solution in a predetermined tank (not illustrated) for a predetermined time. The detachable layer 5 of the multilayer film reflective mirror 10 is dissolved by the nitric acid during a period when the multilayer film reflective mirror 10 is immersed, and the second multilayer film 6 on the detachable layer 5 is removed when the detachable layer 5 is dissolved. Then, the multilayer film reflective mirror 10 recovers to have high reflectance with respect to incident light EL1 because the first multilayer film 4 is exposed on a surface as illustrated in
As described above, the multilayer film reflective mirror 10 in the present embodiment is provided with: the substrate 1; the first multilayer film 4 that is formed by alternately layering the Mo layer 2 (a first material) and the Si layer 3 (a second material) on the surface 1a of the substrate 1; the detachable layer 5 that is formed on the multilayer film 4 and that is detachable from the multilayer film 4; and the second multilayer film 6 that is formed by alternately layering the Mo layer 2 and the Si layer 3 on the detachable layer 5, the multilayer film 6 is removable with the detachable layer 5 by detaching the detachable layer 5 by dissolving it by the acid (a remover).
According to the multilayer film reflective mirror 10, when the reflectance is reduced, the first multilayer film 4 can be exposed on the surface by a simple operation that detaches the detachable layer 5 and thus the reflectance can be increased. As a result, a maintenance cost for the optical system using the multilayer film reflective mirror 10 can be reduced.
Moreover, a regenerating method of a multilayer film reflective mirror 10 in the present embodiment includes: the steps 102 to 112 for preparing the multilayer film reflective mirror as described above; and the step 124 for adding the nitric acid (the remover) to the detachable layer 5 of the multilayer film reflective mirror 10 and removing the detachable layer 5 of the multilayer film reflective mirror 10 and the multilayer film 6 formed on the detachable layer 5. According to this regenerating method, the reflectance of the multilayer film reflective mirror 10 can be recovered by the simple operation.
A regenerating apparatus 34 illustrated in
As described above, the regenerating apparatus 34 for the multilayer film reflective mirror 10 is provided with: the tank (a removing part) 36 for adding the nitric acid solution 36 (the remover) to the multilayer film reflective mirror 34 and removing the detachable layer 5 of the multilayer film reflective mirror 10 and the multilayer film 6 formed on the detachable layer 5. By using the regenerating apparatus 34, the reflectance of the multilayer film reflective mirror 10 can be recovered by the simple operation. The holding part 38 may hold the multilayer film reflective mirror 10 by grasping a side surface or the like of the substrate 1, for example.
In the above described embodiment, the center position of the detachable layer 5 of the multilayer film reflective mirror 10 along the thickness direction is at the position that is away from the center position of the Si layer 3 of the first multilayer film 4 along the layering direction by the integral multiple of the cycle length p1 of the multilayer film 4. However, as illustrated by a multilayer film reflective mirror 10A in a first modified example in
In this modified example, the cycle length p1 (=d1+d2) of the multilayer film 6A is also same as the cycle length p1 of the multilayer film 4A. As one example, the thickness d1 is 2.76 nanometer, the thickness d2 is 4.14 nanometer and the cycle length p1 is 6.9 nanometer. In this case, the reflectance becomes high when the light whose wavelength λ is 13.5 nanometer enters the multilayer film 4A or 6A almost vertically. Moreover, as one example, the thickness d5 of the Si layer 3A is 3.02 nanometer. Moreover, in this modified example, as one example, the number of the one-cycle layers in the first multilayer film 4A is fifty and the number of the one-cycle layers in the second multilayer film 6A is twenty.
Moreover, the thickness d4 of the detachable layer 5A is set as described above.
d4=2×p1−2×d5−d1 (2)
When the thickness d1 is 2.76 nanometer, the thickness d5 is 3.02 nanometer and the cycle length p1 is 6.9 nanometer, the thickness d4 is 5 nanometer. In this case, if a position of the second multilayer film 6A is displaced in the depth direction by the integral multiple of the cycle length p1, positions of the Mo layers 2 and the Si layers 3 in the multilayer film 6A overlap positions of the Mo layers 2 and the Si layers 3 in the first multilayer film 4A, respectively. In other words, each of the multilayer films 4A and 6A can be regarded as one portion of one multilayer film in which the Mo layers 2 and the Si layers 3 are layered with the cycle length p1 on the substrate 1, as illustrated in
As a result, the phase of the light EL2 having the wavelength λ that is reflected by the first multilayer film 4A through the second multilayer film 6A and the detachable layer 5A becomes same as the phase of the light EL1 having the wavelength λ that is reflected by the second multilayer film 6A and both lights amplify each other, and thus the reflectance becomes high.
Moreover, the center position 5Ac of the detachable layer 5A along the thickness direction is at a position that is away from the center position 2c of each Mo layer 2 of the first multilayer film 4A along the layering direction (the thickness direction) by the integral multiple (one time in
Moreover, a solid curved line C3 represents a variation of the reflectance of the multilayer film reflective mirror 10A when the above described detachable layer 5A is formed on the first multilayer film 4A in which the layer number is fifty and then the second multilayer film 6A is formed thereon and the layer number of the multilayer film 6A is increased. The curves line C3 indicates that the reflectance decreases to about 48.1% when the detachable layer 5A is formed, however, the reflectance is saturated when about twenty layers that is less than the layer number of the first multilayer film 4A are layered by increasing the layer number of the second multilayer film 6A layered on it and saturated reflectance is about 72.8%. As described above, setting the layer number of the multilayer film 6A to about twenty results in the reflectance that is substantially same as the reflectance in the case where there is only the first multilayer film 4A in which the layer number is fifty. Based on the above described consideration, the layer number of the first multilayer film 4A is set to fifty and the layer number of the second multilayer film 6A is set to twenty in this modified example.
Moreover, in this modified example, when the reflectance is reduced, the first multilayer film 4A can be also exposed on the surface and thus the reflectance can be increased, by immersing the multilayer film reflective mirror 10A in the nitric acid solution, for example, to remove the multilayer film 6A with the detachable layer 5A.
Moreover, in the above described embodiment, each of the multilayer film 6 of the multilayer reflective mirror 10 and the multilayer film 4 after the reflectance is recovered is exposed on the surface. On the other hand, as illustrated by a multilayer film reflective mirror 10B in a second modified example in
In this modified example, the cycle length p1 (=d1+d2) of the multilayer film 6 is also same as the cycle length p1 of the multilayer film 4, and as one example, the thickness d1 is 2.76 nanometer, the thickness d2 is 4.14 nanometer and the cycle length p1 is 6.9 nanometer. Moreover, as one example, the number of the one-cycle layers in the first multilayer film 4 is fifty and the number of the one-cycle layers in the second multilayer film 6 is thirty. Moreover, as one example, the thickness d7 of the protection layer 8 is 3 nanometer. Ruthenium (Ru) can be used as a material of the protection layer 8. A metal such as Niobium (Nb), Titanium (Ti), Rhodium (Rh), Platinum (Pt) and Palladium (Pd) or an oxidized metal such as Niobium, Molybdenum, Ruthenium or Titanium may be used as the material of the protection layer 8.
Moreover, the material (for example, the Cu—Ag alloy, the Cu—Al alloy, the Al—Ag alloy or the like) that is dissolved by the acid more easily than the multilayer films 4A and 6A (the Mo layer 2 and the Si layer 3) can be used as a material of the detachable layer 5B, as with the material of the detachable layer 5 in
d6+d7=d3 (3)
When the thickness d1 is 2.76 nanometer, the thickness d7 is 3 nanometer and the cycle length p1 is 6.9 nanometer, the thickness d6 is 6.66 nanometer. In this case, if the position of the second multilayer film 6 is displaced in the depth direction by the integral multiple of cycle length p1, the positions of the Mo layers 2 and the Si layers 3 in the multilayer film 6 overlap positions of the Mo layers 2 and the Si layers 3 in the first multilayer film 4, respectively. As a result, the phase of the light that is reflected by the second multilayer film 6 becomes same as the phase of the light that is reflected by the first multilayer film 4 through the detachable layer 5B and the protection layer 8 and both lights amplify each other, and thus the reflectance becomes high.
Moreover, a center position of the detachable layer 5B and protection layer 8 below it along the thickness direction is at a position that is away from a center position of each Si layer 3 of the first multilayer film 4 along the layering direction (the thickness direction) by the integral multiple of the cycle length (the layering cycle) p1 of the multilayer film 4. Thus, the detachable layer 5B and the protection layer 8 are also one portion of a periodic structure of the multilayer film reflective mirror 10B, and as a result, the reduction of the reflectance that would be caused by placing the detachable layer 5B and the protection layer 8 can be suppressed.
The protection layer may be formed on at least one of the first multilayer film 4 or the second multilayer film 6 in this modified example.
Moreover, a solid curved line C5 represents a variation of the reflectance of the multilayer film reflective mirror 10B when the detachable layer 5B is formed on the protection layer 8 on the first multilayer film 4 in which the layer number is fifty and then the second multilayer film 6 and the protection layer 8 are formed thereon and the layer number of the multilayer film 6 is increased. The curves line C5 indicates that the reflectance decreases to about 36.6% when the detachable layer 5B is formed, however, the reflectance is saturated when about thirty layers that is less than the layer number of the first multilayer film 4 are layered by increasing the layer number of the second multilayer film 6 layered on it and saturated reflectance is about 73.6%. As described above, setting the layer number of the second multilayer film 6 to about thirty results in the reflectance that is substantially same as the reflectance in the case where there is only the first multilayer film 4 in which the layer number is fifty. Based on the above described consideration, the layer number of the first multilayer film 4 is set to fifty and the layer number of the second multilayer film 6 is set to thirty in this modified example.
Moreover, in this modified example, when the reflectance is reduced, the protection layer 8 on the surface of the first multilayer film 4 can be also exposed on the surface and thus the reflectance can be increased, by immersing the multilayer film reflective mirror 10B in the nitric acid solution, for example, to remove the multilayer film 6 and the protection layer 8 on it with the detachable layer 5B. Moreover, the protection layer 8 is capable of suppressing the reduction of the reflectance that is caused by the oxidation of the surface of the multilayer film 6 or the multilayer film 4 after the reflectance is recovered.
In the above described embodiment and the modified examples, the substrate 1 that is processed with high accuracy and is a high price member may be reused, by placing a detachable layer (not illustrated) that is same as the detachable layer 5, 5A or 5B between the substrate 1 and the first multilayer film 4 or 4A and by removing the multilayer film 4 or 4A with this detachable layer after the reflectance is reduced due to the above described attachment of the contamination of the carbon or the like.
With reference to
The cycle length (=d1+d2) of each of the first, second, third and fourth multilayer films 4A, 6A, 61 and 62 is same as one another and is 6.9 nanometer, the thickness d1 of the Mo layer 2 is 2.76 nanometer and the thickness d2 of the Si layer 3 is 4.14 nanometer. Moreover, the thickness d5 of the Si layer 3A that is the top layer in each of the multilayer films 4A, 6A and 61 is 3.02 nanometer and the thickness d5 of the Si layer 3A that is the bottom layer in each of the multilayer films 6A, 61 and 62 is 3.02 nanometer. Moreover, the number of the one-cycle layers each of which includes the Mo layer 2 and the Si layer 3 in the first multilayer film 4A is fifty. The number of the one-cycle layers each of which includes the Mo layer 2 and the Si layer 3 in each of the second, third and fourth multilayer films 6A, 61 and 62 is twenty.
Moreover, a material of each of the detachable layer 51 that is the bottom layer and the first, second and third detachable layers 5A, 52 and 53 is the material (for example, the Cu—Ag alloy, the Cu—Al alloy, the Al—Ag alloy or the like) that is dissolved by the acid more easily than the multilayer films 4A and 6A and the like (the Mo layer 2 and the Si layer 3), as with the material of the detachable layer 5A in
Moreover, an area where the first multilayer film 4A is formed is slightly smaller than an area where the detachable layer 51 that is the bottom layer is formed, and one portion of the detachable layer 51 that is the bottom layer is exposed on a surface. In a similar manner, a range where the second multilayer film 6A is formed is slightly smaller than an area where the first multilayer film 4A and the first detachable layer 5A are formed, a range where the third multilayer film 61 is formed is slightly smaller than an area where the second multilayer film 6A and the second detachable layer 52 are formed, a range where the fourth multilayer film 62 is formed is slightly smaller than an area where the third multilayer film 61 and the third detachable layer 53 are formed, and one portion of each of the detachable layers 5A, 52 and 53 is exposed on a surface.
As with the modified example in
Moreover, a center position of each of the first, second and third detachable layer 5A, 52 and 53 along the depth direction is located at a position that is away from a center position of the Mo layer 2 of the first multilayer film 4A (and second, third and fourth multilayer films 6A, 61 and 62) along the depth direction by the integral multiple of the cycle length p1. Thus, each of the detachable layers 5A, 52 and 53 is also one portion of a periodic structure of the multilayer film reflective mirror 10C, and as a result, the reduction of the reflectance that would be caused by placing the detachable layers 5A, 52 and 53 can be suppressed.
When the multilayer film reflective mirror 10C in present embodiment is used as the optical system of the EUV exposure apparatus or the like and the reflectance is reduced due to the attachment of the contamination to the surface thereof or the forming of the oxide film on the surface thereof, the third multilayer film 61 can be exposed on the surface and thus the reflectance can be increased by immersing the multilayer film reflective mirror 10C in the nitric acid solution to dissolve the third detachable layer 53 and to remove the third detachable layer 53 and the fourth multilayer film 62 on it.
In this case, in order to allow only the third detachable layer 53 to dissolve while allowing the detachable layer 51 that is the bottom layer and the first and second detachable layers 5A and 52 not to dissolve, it is preferable that the multilayer film reflective mirror 10C be immersed in the nitric acid solution after applying photoresist, photosensitive polyimide or the like (a material that is not dissolved by the acid) to form a coat layer 7 and protecting the other detachable layers 51, 5A and 52 so that only the third detachable layer 53 is exposed on the surface and the other detachable layers 51, 5A and 52 are not exposed on the surface, as illustrated in
Moreover, when the reflectance is reduced under the condition where the multilayer film reflective mirror 10C in which the third multilayer film 61 is exposed on the surface is used, a part of the coat layer 7 in
As described above, according to the multilayer film reflective mirror 10C in present embodiment, the reflectance can be recovered three times, i.e., the recovery of the reflectance by removing the third detachable layer 53 and the fourth multilayer film 62, the recovery of the reflectance by removing the second detachable layer 52 and the third multilayer film 61 and the recovery of the reflectance by removing the first detachable layer 5A and the second multilayer film 6A. As the number of blocks each of which includes the detachable layer and the multilayer film increases more, the reflectance can be recovered more times. Moreover, according to present embodiment, when the first multilayer film 4A is deteriorated at the end, the substrate 1 can be reused by removing the multilayer film 4A with the detachable layer 51 that is the bottom layer.
In present embodiment, regarding the detachable layers 51, 5A, 52 and 53, the detachable layer 5A formed above the detachable layer 51 that is the bottom layer may be formed by a material that is dissolved by the acid more easily (a material that is dissolved by the acid for shorter time) than the detachable layer 51, and in a similar manner, the detachable layer 52 formed above the detachable layer 5A may be formed by a material that is dissolved by the acid more easily than the detachable layer 5A, and the detachable layer 53 formed above the detachable layer 52 may be formed by a material that is dissolved by the acid more easily than the detachable layer 52. Thus, when the reflectance of the multilayer film 62 that is the top layer is reduced, for example, only the multilayer film 62 that is the top layer can be removed by immersing the multilayer film reflective mirror 10C in the nitric acid solution for a period by which only the detachable layer 53 that is the top layer is dissolved. In a similar manner, only the multilayer film 61 can be removed by dissolving the detachable layer 52 by the acid and only the multilayer film 6A can be removed by dissolving the detachable layer 5A by the acid. Thus, even if the coat layer 7 is not formed, the detachable layers can be removed in order from the detachable layer 53 that is the top layer.
In the above described first and second embodiment, the multilayer films 4, 4A, 6, 6A and the like of the multilayer film reflective mirrors 10 to 10C are used for reflecting the soft X-ray (the EUV light) whose wavelength is 13.5 nanometer. However, the wavelength of the light that is reflected may be any wavelength. For example, a multilayer film (a Mo/Be multilayer film) that is formed by alternately layering a Molybdenum layer and a Beryllium (Be) layer may be used for light whose wavelength is about 11 nanometer. Moreover, a multilayer film (a La/B4C multilayer film) that is formed by alternately layering a Lanthanum (La) layer and a Boron carbide (B4C) layer, a multilayer film (a LaB multilayer film) that is formed by alternately layering a Lanthanum layer and a Boron layer, a multilayer film (a LaN/B multilayer film) that is formed by alternately layering a Lanthanum nitride (LaN) layer and a Boron layer or the like may be used for light whose wavelength is about 6.7 nanometer.
As this multilayer film, a multilayer film that is formed by alternately layering a layer of a first material that includes atom or alloy whose density is more than 4 g/cm3 (for example, Molybdenum) and a layer of a second material that includes atom or alloy whose density is equal to or less than 4 g/cm3 (for example, Silicon or Beryllium) may be used. Moreover, as this multilayer film, not only the multilayer film that is formed by alternately layering two materials, but also a multilayer film that is formed by alternately layering three or more materials may be used. For example, a multilayer film (Ru/Mo/Si multilayer film) that is formed by alternately layering a Ruthenium (Ru) layer, a Molybdenum (Mo) layer and a Silicon (Si) layer, a multilayer film (Mo/Ru/Mo/Si multilayer film) that is formed by alternately layering a Molybdenum (Mo) layer, a Ruthenium (Ru) layer, a Molybdenum (Mo) layer and a Silicon (Si) layer and the like may be used. As this multilayer film, a multilayer film that is formed by alternately layering two or more materials including Molybdenum (Mo), Silicon (Si), Ruthenium (Ru), Rhodium (Rh), Lanthanum (La), Boron (B), Beryllium (Be), Boron carbide (B4C), Silicon carbide (SiC), Molybdenum carbide (MoC), Lanthanum nitride (LaN) and the like.
With reference to
In present embodiment, since the EUV light is used as the exposure light EL, the illumination optical system ILS and the projection optical system PO are constructed by reflective optical members such as a plurality of mirrors, except for a particular filter (not illustrated) and the like, and the reticle R is also a reflective type. This reflective optical member are members each of which has a reflective surface that is made by forming a multilayer film (a reflective film for the EUV light) including Molybdenum (Mo) and Silicon (Si), for example, on a surface of a member that is made of a low thermal expansion glass (or quartz, a high heat resistance metal or the like) after processing the surface of this member into a predetermined curved surface or planar surface with high accuracy, for example. At least one of these reflective optical member is a multilayer film reflective mirror that is same as the multilayer film reflective mirror 10, 10A or 10C in
Moreover, the reticle R is one that is manufactured by forming a transcriptional pattern in a rectangular or square pattern area PA on a reflective surface by an absorption layer that is made of a material absorbing the EUV light such as Tantalum (Ta), Nickel (Ni), Chrome (Cr) or the like after making the reflective surface (a reflective film) by forming a multilayer film on a surface of a substrate of a low thermal expansion glass, for example.
Moreover, in order to prevent gas from absorbing the EUV light, whole of a exposure main unit of the exposure apparatus EX including the laser plasma light source 20, the reticle stage RST, the projection optical system PO and the wafer stage WST is housed in a box-shaped vacuum chamber CH, and a large vacuum pump 32 for vacuumizing a space in the vacuum chamber CH is provided. As one example, a gas pressure in the vacuum chamber CH is about 10−5 Pa and a gas pressure in a sub chamber (not illustrated) that houses the projection optical system PO in the vacuum chamber CH is about 10−5 to 10−6 Pa.
Hereinafter, in
Firstly, the laser plasma light source 20 is a droplet target type of light source that is provided with: a high-power laser light source (not illustrated); a condenser lens 12 that is configured to condense laser light supplied from the laser light source through a window member 15 of the vacuum chamber CH; a nozzle 14 that is configured to inject target droplet such as Tin (Sn); and a condenser mirror 13 having a reflective surface whose shape is a spheroidal surface. The exposure light EL that is emitted in a pulsed manner from the laser plasma light source 20 with a frequency of several kHz, for example, is focused on a second focal point of the condenser mirror 13. The exposure light EL focused on the second focal point is converted to parallel light through a concave mirror (a collimator optical system) 21 and then reflected by a first fly eye optical system 22 and a second fly eye optical system 23 (an optical integrator) in order each of which includes a plurality of mirrors. As one example, the first multilayer film 4, the detachable layer 5 and the second multilayer film 6 are formed on each of a reflective surface 13a of the condenser mirror 13 and a reflective surface 21a of the concave mirror 21, as with the multilayer film reflective mirror 10 in
In
Next, the reticle R is sucked and held by a bottom surface (a lower surface) of the reticle stage RST through an electrostatic chuck RH that is a reticle holder, and the reticle stage RST is held by a driving system including a magnetically levitated type two-dimensional linear actuator, for example, along a guide surface (a lower surface) that is parallel to a XY plane of a reticle base RB placed at a ceiling part in the vacuum chamber CH while securing a predetermined gap.
A laser interferometer (not illustrated) measures positions in the X direction and the Y direction, an angle of tilt around the Z axis (Oz direction) and the like of the reticle stage RST. Based on the measured values and the like, the reticle stage RST is controlled to move in a predetermined movable range in the Y direction along the guide surface of the reticle base RB by a not illustrated driving part, and is also movable in the X direction, the Oz direction and the like to some extent.
The exposure light EL that is reflected by the illumination area 27R on the reticle R propagates to the projection optical system PO that is configured to form a reduced image of a pattern of an object surface (a first surface) on an image surface (a second surface). The projection optical system. As one example, the projection optical system PO is constructed by six mirrors M1 to M6 held by a not illustrated barrel, and is a reflective optical system that is almost non-telecentric on an object surface (the pattern surface Ra) side and that is almost telecentric on an image surface (a surface of the wafer W) side, and a projection magnification is a reduced magnification such as ¼. The exposure light EL that is reflected by the illumination area 27R on the reticle R forms the reduced image of one portion of the pattern in the pattern area PA in the reticle R on an exposed area 27W (an area that is optically conjugate to the illumination area 27R) in one shot area (a die) of the wafer W through the projection optical system PO.
In the projection optical system PO, the exposure light EL from the reticle R is reflected upwardly (+Z direction) by the first mirror M1, then is reflected downwardly by the second mirror M2, then is reflected upwardly by the third mirror M3, and then is reflected downwardly by the fourth mirror M4. Then, the exposure light EL that is reflected upwardly by the fifth mirror M5 is reflected downwardly by the sixth mirror M6 to form the image of one portion of the pattern of the reticle R on the surface of the wafer W. As one example, the projection optical system PO is a coaxial optical system in which optical axes of the mirrors M1 to M6 mutually overlap with an optical axis AX, and an aperture stop (not illustrated) is placed at a pupil plane near a reflective surface of the second mirror m2 or at a position near this plane. As one example, the first multilayer film 4, the detachable layer 5 and the second multilayer film 6 are formed at a reflective surface Mia of the mirror M1, as with the multilayer film reflective mirror 10 in
Moreover, the wafer W is sucked and held on the wafer stage WST through an electrostatic chuck (not illustrated). The wafer stage WST is placed on a guide surface that is placed along the XY plane. The wafer stage WST is controlled to move in a predetermined movable range in the X direction and the Y direction by a driving part (not illustrated) including a not illustrated magnetically levitated type two-dimensional linear actuator, for example, and is controlled to move in the Oz direction if desired, on the basis of a measured value of a laser interferometer (not illustrated) or the like.
The wafer stage WST that is configured to move the wafer W is placed inside a partition CHW in exposing, for the purpose of preventing a gas generated from the resist on the wafer W from adversely affecting the mirrors M1 to M6 of the projection optical system PO. An opening through which the exposure light EL is allowed to pass is formed at the partition CHW, and a space in the partition CHW is vacuumized by another vacuum pump (not illustrated).
As a basic operation in exposing the wafer W, one shot area on the wafer W moves to a scanning start position by the movement of the wafer stage WST in the X direction and the Y direction (a step movement). Then, the exposure light EL is radiated on the illumination area 27R from the illumination optical system ILS, and a scanning exposure of the image of the pattern of the reticle R is performed on this shot area by exposing the exposed area 27W in this shot area of the wafer W by the image of the pattern in the illumination area 27R of the reticle R through the projection optical system PO while synchronously driving the reticle stage RST and the wafer stage WST to synchronously moving the reticle R and wafer W relative to the projection optical system PO in the Y direction at a speed ratio based on the projection magnification. Then, the step movement and the scanning exposure are repeated in a step and scan method, and as a result, the plurality of shot areas on the wafer W are exposed in order by the image of the pattern in the illumination area 27R of the reticle R.
According to the exposure apparatus EX in the present embodiment, when the reflectance of the condenser mirror 13, the concave mirror 21 or the mirror M1 is reduced, the reflectance can be recovered by immersing the condenser mirror 13, the concave mirror 21 or the mirror M1 in the nitric acid solution to expose the first multilayer film 4 on the surface. Therefore, a maintenance cost for the laser plasma light source 20, the illumination optical system ILS and the projection optical system PO of the exposure apparatus EX can be reduced.
Moreover, when an electrical device (a micro device) such as a semiconductor device is manufactured by using the exposure apparatus EX or the exposure method in the above described embodiment, this electrical device is manufactured through: a step 221 at which function and performance of the device is designed; a step 222 at which a mask (a reticle) based on this designing step is manufactured; a step 223 at which a substrate (a wafer) that is a base material of the device is manufactured; a substrate processing step 224 including a step at which the substrate is exposed by a pattern of the mask by using the exposure apparatus or the exposure method in the above described embodiment, a step at which the exposed substrate is developed, a step at which the developed substrate is heated (cures) and etched, and the like; a device assembly step (including a processing process such as a dicing step, a bonding step, a packaging step) 225; an inspection step 226 and the like, as illustrated in
In other words, the above described device manufacturing method includes: a step for exposing a substrate (the wafer W) through a pattern of the mask by using the exposure apparatus or the exposure method in the above described embodiment; and a step for processing the exposed substrate (namely, a developing step for developing a resist on the substrate and forming a mask layer corresponding to the pattern of the mask on a surface of the substrate and a processing step for processing (heating, etching and the like) the surface of the substrate through the mask layer.
According to this device manufacturing method, the maintenance cost for the exposure apparatus EX can be reduced, and thus a manufacturing cost of the electrical device can be reduced.
Moreover, the present invention is not limited to the usage for the manufacturing process of the semiconductor device, and can be widely used for the manufacturing process of a liquid crystal element, a plasma display and the like and a manufacturing process of any device (an electrical device) such as an imaging element (CMOS type, CCD or the like), a micro machine, a MEMS (Micro Electro Mechanical System), a thin film magnetic head and a DNA chip, for example.
In the above described embodiment, the X-ray (the EUV light) generated by the laser plasma light source is used as the exposure light, however, the X-ray from a discharged plasma light source or a synchrotron radiation light may be used as the exposure light, for example.
Moreover, the above described embodiment illustrates an example in which the EUV light is used as the exposure light and the reflective type of projection optical system including only six mirrors is used, however, this is one example. For example, the present invention can be applied to an exposure apparatus that is provided with a projection optical system including only four or another number of mirrors, and further to an exposure apparatus that is provided with, as the light source, a VUV (Vacuum Ultra-Violet) light source that generates the VUV light whose wavelength is 100 to 160 nanometer, an exposure apparatus that uses a Ar2 laser (wavelength is 126 nanometer) as an exposure light source, for example, and that is provided with a projection optical system including only four to eight or another number of mirrors, and the like.
The present invention is not limited to the above described embodiments, and can be changed without departing from the essence of the present invention.
Moreover, the disclosures of the above described publication, each International Publication, United States patent or United States patent application Publication which is cited in the present application are incorporated by reference as one portion of the disclosures of the present application. Moreover, the entire contents of the disclosures of Japanese Patent Application No. 2014-033476 filed on Feb. 24, 2014, including the Specification, Claims, Drawings and Abstract, are incorporated by reference in the disclosure of the present application. Moreover, the entire contents of the disclosures of International Patent Application No. PCT/JP2015/055169 filed on Feb. 24, 2015, including the Specification, Claims, Drawings and Abstract, are incorporated by reference in the disclosure of the present application
| Number | Date | Country | Kind |
|---|---|---|---|
| 2014-033476 | Feb 2014 | JP | national |
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2015/055169 | Feb 2015 | US |
| Child | 15244669 | US |
