NANOSIZED SEMICONDUCTOR PARTICLES

Abstract

Nanosized semiconductor particles of a core/shell structure is disclosed, wherein the particles each comprise a core and a shell and exhibit an average particle size of not more than 100 nm and a coefficient of variation in core size distribution of not more than 30%.

Description

Claims

1. Nanosized semiconductor particles of a core/shell structure, wherein the particles each comprise a core and a shell and exhibit an average particle size of not more than 100 nm and a coefficient of variation in core size distribution of not more than 30%.

2. The semiconductor particles of claim 1, wherein the particles exhibit a coefficient of variation in particle size distribution of not more than 30%.

3. The semiconductor particles of claim 1, wherein the core is comprised of a composition including at least one element selected from the group consisting of B, C, N, Al, Si, P, S, Zn, Ga, Ge, As, Cd, In, Sb and Te.

4. The semiconductor particles of claim 1, wherein the core is comprised of a single crystalline substance.

5. The semiconductor particles of claim 1, wherein the shell is comprised of a composition exhibiting a greater band gap than that of the core.

6. The semiconductor particles of claim 1, wherein the particles exhibit an average core size of 1 to 60 nm.

7. The semiconductor particles of claim 6, wherein the average core size is from 2 to 20 nm.

8. The semiconductor particles of claim 7, wherein the particles exhibit an average thickness of the shell of not less than 0.2 nm and not more than ½ of the average particle core size.

9. The semiconductor particles of claim 1, wherein the core is comprised of silicon or germanium.

10. The semiconductor particles of claim 9, wherein the core is comprised of silicon and the shell is comprised of silicon oxide.

11. The semiconductor particles of claim 10, wherein silicon oxide is silicon dioxide.