NF3 chamber clean additive

Abstract

Methods of cleaning a processing chamber with nitrogen trifluoride (NF3) are described. The methods involve a concurrent introduction of nitrogen trifluoride and a reactive diluent into the chamber. The NF3 may be excited in a plasma inside the chamber or in a remote plasma region upstream from the chamber. The reactive diluent may be introduced upstream or downstream of the remote plasma such that both NF3 and the reactive diluent (and any plasma-generated effluents) are present in the chamber during cleaning. The presence of the reactive diluent enhances the chamber-cleaning effectiveness of the NF3.

Description

BACKGROUND OF THE INVENTION

The semiconductor industry has benefited from in-situ dry cleaning procedures made possible by exciting nitrogen trifluoride in a plasma and flowing the plasma effluents to clean interior surfaces of a substrate processing chamber. In-situ cleaning procedures avoid requiring chamber disassembly while still removing undesired substances such as silicon nitride, polycrystalline silicon, silicides and silicon dioxide. Removing these undesired substances before additional substrate processing may reduce defects and control electro-mechanical properties of processed layers.

A prior art chamber cleaning procedure is shown in FIG. 1 and begins when nitrogen trifluoride is flowed into a substrate processing chamber (operation 110). A plasma is formed from the nitrogen trifluoride (operation 115) to populate the processing chamber with reactive fragments of the nitrogen trifluoride. The plasma effluents are reacted with contaminants residing on interior surfaces of the chamber (operation 120). The reacted contaminants are then removed from the chamber through the chamber exhaust system (operation 125). The plasma may either reside in the chamber or outside (and upstream from) the chamber.

The relatively high cost of nitrogen trifluoride combined with speculation that the agent has a high global warming potential (GWP), are causing manufacturers to look for ways to use less NF₃ per preventative maintenance procedure. Thus there is a need for new chamber cleaning agents which more effectively remove contaminants from the interior surfaces of substrate processing chambers and produce more eco-friendly exhaust gases.

BRIEF SUMMARY OF THE INVENTION

Methods of cleaning a chemical vapor deposition (CVD) chamber with nitrogen trifluoride (NF₃) are described. The methods involve a concurrent introduction of nitrogen trifluoride and a reactive diluent into a CVD chamber. The NF₃ may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber. The reactive diluent may be introduced upstream or downstream of the remote plasma such that both NF₃ and the reactive diluent (and any plasma-generated effluents) are present in the CVD chamber during cleaning. The presence of the reactive diluent enhances the chamber-cleaning effectiveness of the NF₃ which allows less NF₃ to be used and discarded. The reactive diluent may also reduce the ability of the NF₃ to reform and therefore, further reduce the quantity of discarded NF₃.

Embodiments of the invention include methods of cleaning a CVD chamber with NF₃. The methods may include introducing a cleaning mixture to the CVD chamber. The cleaning mixture comprises the NF₃ or reactive species generated from the NF3 as well as a reactive diluent. The methods may further include reacting a first fluorine-containing species generated from the NF3 with a contaminant in the CVD chamber. The reacted contaminant is removed from the CVD chamber. The methods may further include forming a non-NF₃ emission product from a reaction of the reactive diluent with a second fluorine-containing species generated from the NF₃. The formation of the non-NF₃ emission product reduces the formation of NF₃ from the CVD chamber cleaning process.

Embodiments may also include methods of cleaning a CVD chamber with NF₃. The method may include introducing a cleaning mixture to the CVD chamber, wherein the cleaning mixture comprises the NF₃ or reactive species generated from the NF₃ and a replacement compound selected from the group consisting of COF₂, IF₅, F₂, NCl₂F, NI₂F, (CH₃)₂NF, (CF₃)₂NF, NOF₂, BrF₃, IF, and ClF to the CVD chamber. The methods may further include reacting the cleaning mixture and the replacement compound with a contaminant in the CVD chamber to form a reacted contaminant which is removed from the CVD chamber. A presence of the replacement compound results in less NF₃ exhausted from the CVD chamber following reaction with the contaminant.

Additional embodiments and features are set forth in part in the description that follows, and in part will become apparent to those skilled in the art upon examination of the specification or may be learned by the practice of the disclosed embodiments. The features and advantages of the disclosed embodiments may be realized and attained by means of the instrumentalities, combinations, and methods described in the specification.

BRIEF DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the disclosed embodiments may be realized by reference to the remaining portions of the specification and the drawings.

FIG. 1 is a flowchart of a nitrogen trifluoride CVD-chamber-clean process.

FIG. 2 is a flowchart of a reactive diluent-enhanced nitrogen trifluoride CVD-chamber-clean process according to disclosed embodiments.

FIG. 3 is a flowchart of a replacement-compound-enhanced nitrogen trifluoride CVD-chamber-clean process according to disclosed embodiments.

FIG. 4 is a plot comparing etch rates from plasmas of NF₃ and NF₃+CO₂.

FIG. 5 is a plot showing etch rates from plasmas of NF₃+CO₂ at various mixture ratios of NF₃ to CO₂.

In the appended figures, similar components and/or features may have the same reference label. Further, various components of the same type may be distinguished by following the reference label by a dash and a second label that distinguishes among the similar components. If only the first reference label is used in the specification, the description is applicable to any one of the similar components having the same first reference label irrespective of the second reference label.

DETAILED DESCRIPTION OF THE INVENTION

Methods of cleaning a process chamber with nitrogen trifluoride (NF₃) are described. The methods involve a concurrent introduction of nitrogen trifluoride and a reactive diluent into a process chamber. The NF₃ may be excited in a plasma inside the chamber or in a remote plasma region upstream from the chamber. The reactive diluent may be introduced upstream or downstream of the remote plasma such that both NF₃ and the reactive diluent (and any plasma-generated effluents) are present in the chamber during cleaning. The presence of the reactive diluent enhances the chamber-cleaning effectiveness of the NF₃ which allows less NF₃ to be used and discarded. The reactive diluent may also reduce the ability of the NF₃ to reform and therefore, further reduce the quantity of discarded NF₃. Exemplary chambers may include chemical vapor deposition (CVD) chambers, physical vapor deposition (PVD) chambers, and atomic-layer deposition (ALD) chambers, among other kinds of process chambers.

In order to better understand and appreciate the invention, reference is now made to FIG. 2, which is a flowchart showing a reactive diluent-enhanced nitrogen trifluoride according to embodiments of the invention. The process may include flowing nitrogen trifluoride into a processing chamber (operation 210). A flow of a reactive diluent (CO₂) may be introduced to the processing chamber (operation 215) and a plasma may be formed (operation 220) from the two precursors (NF₃ and CO₂) to create plasma effluents. Plasma effluents may react with an undesirable contaminant residing on an interior surface of the chamber (operation 225). The reacted contaminant may be removed from the chamber through the chamber exhaust system (operation 230). CO₂ and its plasma effluents may react with NF₃ fragments to form non-NF₃ emission products which may have a lower global warming potential (GWP) than NF₃ in operation 235. The non-NF₃ emission products may also be removed from the chamber through the chamber exhaust system. The presence of the reactive diluent reduces the amount of NF₃ entering the exhaust system for a similar amount of contaminant removed. The reduction is in comparison to the NF₃ produced in an otherwise-similar cleaning procedure, such as the procedure shown in FIG. 1.

A variety of reactive diluents can be used to recombine with NF₃ fragments, thereby reducing the amount of NF₃ which enters the exhaust system. For example, a reactive diluent may contain one or more precursors selected from CO, CO₂, H₂O, SO₂, H₂, and O₂, and saturated or unsaturated hydrocarbons having two to four carbons (C₂-C₄ hydrocarbons), among other precursors. Exemplary C₂ hydrocarbons include C₂H₂ and C₂H₄, and C₃ hydrocarbons include C₃H₄ and C₃H₅. The plasma may be in the substrate processing chamber or upstream from the chamber in a remote plasma region. It should be appreciated that some molecules which are thought of as non-reactive or inert under room temperature and pressure ambient conditions (e.g., CO₂) may be considered reactive diluents under the conditions inside the chamber and/or remote plasma region during an operation.

The reactive diluent may be introduced downstream from the remote plasma region such that, in essence, only the NF₃ passes through plasma excitation in embodiments of the invention. Plasmas may also be present in both regions. In some embodiments, a hot surface such as a filament is used in place of a plasma in any of the plasma configurations described. The combination of NF₃, the reactive diluent and the reactive species formed by the plasma(s) may be referred to as the cleaning mixture. The cleaning mixture may also include a non-reactive gas such as nitrogen (N₂), helium (He), neon (Ne) and/or argon (Ar), as well as mixtures thereof. Non-reactive gases may help to statistically reduce the chance for NF₃ fragments to recombine and form an NF₃ molecule. Some non-reactive gases may also assist in igniting and maintaining the plasma.

Silicon-containing contaminants are typical contaminants which NF₃ plasma treatments are intended to remove. The silicon-containing contaminants may include deposits of silicon oxide on interior surfaces of a deposition chamber during a preceding silicon oxide substrate deposition process. Contaminants may also include silicon nitrides, poly-silicons, silicides, silicon oxy-nitrides, and doped silicon glasses, among other contaminants. As noted above, an exemplary processing chamber for use with the cleaning procedures described include a chemical vapor deposition (CVD) chamber. The claimed cleaning methods may find utility for other chambers such as PVD and ALD chambers. A substrate may or may not be present in the deposition chamber during the cleaning procedure. NF₃ introduction into the exhaust system may be reduced both by decreasing the amount of NF₃ needed to remove a given contaminant and by reducing the recombination of NF₃ fragments to form NF₃. For the same size and nature of a contaminant, inclusion of a reactive diluent may reduce NF₃ emissions to the point where only about 2% by weight of the NF₃ provided in the cleaning gas mixture enters the chamber exhaust system. Traditional abatement methods may be performed on any remaining NF₃ emissions including combusting the emissions and/or treating them with a water scrubber. Combining the methods described herein with the traditional abatement methods may achieve a further reduction in NF₃ released into the atmosphere.

Reactive diluents described above were primarily characterized as recombining with NF₃ fragments to lessen exhaust of NF₃ into the atmosphere. A similar effect can be caused by reducing the amount of NF₃ introduced into the plasma (remote or local) and augmenting the cleaning effect by adding a replacement compound. These compounds, to varying degrees, can perform some of the etching functions normally performed by the NF₃ plasma effluents. FIG. 3 is a flowchart of a replacement-compound-enhanced nitrogen trifluoride CVD chamber clean according to embodiments of the invention. The cleaning process includes flowing nitrogen trifluoride into the processing chamber (operation 310). A replacement compound is also flowed into the chamber (operation 315) and a plasma is formed (operation 320). Plasma effluents react with contaminants resident on the interior surfaces of the processing chamber (operation 325) and the reacted contaminants are removed through the chamber exhaust system (operation 330). The exhaust carries away less NF₃ for a given quantity of removed contaminant (operation 340) as a result of the inclusion of the replacement compound.

A variety of replacement compounds can be used to co-etch the exposed interior surfaces of the chamber in order to ultimately reduce the quantity of NF₃ which enters (and exits) the chamber exhaust system. In general, a replacement compound may contain one or more precursors selected from COF₂, IF₅, IF₇, F₂, NCl₂F, NF₂Cl, NI₂F, (CH₃)₂NF, (CF₃)₂NF, NOF₂, BrF₃, IF and ClF, in embodiments of the inventions. In the case of a chamber plasma, both the NF₃ and the replacement compound flow into the processing chamber. When a remote plasma is used, the NF₃ flows through the remote plasma but the replacement compound may or may not. In some embodiments, the replacement compound flows into the remote plasma and is excited along with the NF₃. The replacement compound may, alternatively, be introduced downstream of the remote plasma but before the NF₃ plasma effluents arrive in the processing chamber.

Replacement compounds have been primarily characterized as fulfilling a similar role as NF₃ and reactive diluents have been described as preempting an NF₃ recombination, and in some instances may also simultaneously generate new etching species. It should be understood that replacement compounds and reactive diluents may each perform some of the desirable function primarily attributed to the other.

EXPERIMENTAL

FIG. 4 shows comparative plots of a doped silicon glass etching with plasmas formed from (1) NF₃ without CO₂ and (2) a combination of NF₃ and CO₂. The two plots show the NF₃ without CO₂ resulting in an etching plateau at about 600 Å, while the NF₃+CO₂ mixture shows a plateau at about 1200 Å. Thus, FIG. 4 demonstrates the greater etching capability of the NF₃+CO₂ mixtures compared with using just NF₃ as the etchant.

FIG. 5 shows a plot of the etch rate for a doped silicon glass as a function of the volumetric ratio of CO₂ to NF₃. The far left side of the column shows an etch rate of about 425 Å/min when no CO₂ is added to the mixture (e.g., CO₂:NF₃ is 0). The plot further shows the highest etch rate is achieved for a CO₂:NF₃ ratio of about 1.5:1. FIG. 5 further establishes that etch gases which include combinations of NF₃ and CO₂ have a greater etch efficiency than NF₃ alone.

As used herein “substrate” may be a support substrate with or without layers formed thereon. The support substrate may be an insulator or a semiconductor of a variety of doping concentrations and profiles and may, for example, be a semiconductor substrate of the type used in the manufacture of integrated circuits. The term “precursor” is used to refer to any process gas which takes part in a reaction to either remove material from or deposit material onto a surface. A gas (or precursor) may be a combination of two or more gases (or precursors) and may include substances which are normally liquid or solid but temporarily carried along with other “matrix gases” or, synonymously, “carrier gases”. Matrix gases or carrier gases may be an “inert gas” which refers to any gas which does not form chemical bonds when etching or being incorporated into a film. Exemplary inert gases include noble gases but may include other gases so long as no chemical bonds are formed when (typically) trace amounts are trapped in a film.

Having disclosed several embodiments, it will be recognized by those of skill in the art that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the disclosed embodiments. Additionally, a number of well known processes and elements have not been described in order to avoid unnecessarily obscuring the present invention. Accordingly, the above description should not be taken as limiting the scope of the invention.

Where a range of values is provided, it is understood that each intervening value, to the tenth of the unit of the lower limit unless the context clearly dictates otherwise, between the upper and lower limits of that range is also specifically disclosed. Each smaller range between any stated value or intervening value in a stated range and any other stated or intervening value in that stated range is encompassed. The upper and lower limits of these smaller ranges may independently be included or excluded in the range, and each range where either, neither or both limits are included in the smaller ranges is also encompassed within the invention, subject to any specifically excluded limit in the stated range. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”, and “the” include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to “a process” includes a plurality of such processes and reference to “the dielectric material” includes reference to one or more dielectric materials and equivalents thereof known to those skilled in the art, and so forth.

Also, the words “comprise,” “comprising,” “include,” “including,” and “includes” when used in this specification and in the following claims are intended to specify the presence of stated features, integers, components, or steps, but they do not preclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.

Claims

1. A method of cleaning a process chamber with NF3, the method comprising: introducing a cleaning mixture to the process chamber, wherein the cleaning mixture consists of a reactive diluent and a fluorinated compound wherein the fluorinated compound includes NF3 and a reactive fluorine-containing species generated from the NF3; andreacting the fluorine-containing species generated from the NF3 with a contaminant in the chamber, wherein the reacted contaminant is removed from the chamber, and wherein the reactive diluent increases an etch rate of the cleaning mixture compared to a mixture consisting essentially of NF3 without the diluent.

2. The method of claim 1, wherein the method further comprises forming a non-NF3 emission product from a reaction of the reactive diluent with the reactive fluorine-containing species generated from the NF3.

3. The method of claim 1, wherein the cleaning mixture forms a plasma in the chamber, and the fluorine-containing species is generated in the plasma.

4. The method of claim 1, wherein the reactive fluorine-containing species generated from the NF3 in the cleaning mixture was generated by exposing the NF3 to a remote plasma prior to the cleaning mixture entering the chamber.

5. The method of claim 1, wherein the reactive diluent comprises a C2-C4 hydrocarbon.

6. The method of claim 1, wherein the reactive diluent comprises carbon monoxide.

7. The method of claim 1, wherein the reactive diluent comprises carbon dioxide, water, or sulfur dioxide.

8. The method of claim 1, wherein the reactive fluorine-containing species is selected from the group consisting of, NF2, NF, F and mixtures thereof.

9. The method of claim 1, further comprising introducing a non-reactive gas that does not react with the reactive fluorine-containing species.

10. The method of claim 9, wherein the non-reactive gas comprises He, Ne, Ar, or N2.

11. The method of claim 1, wherein the contaminant comprises a silicon-containing species.

12. The method of claim 1, further comprising introducing a replacement compound into the process chamber wherein said replacement compound is selected from the group consisting of COF2, IF5, IF5, F2, NCl2F, NF2Cl, NI2F, (CH3)2NF, (CF3)2NF, NOF2, BrF3, IF, ClF and mixtures thereof.