Claims
- 1. A floating gate memory device, comprising:
- a. a floating gate;
- b. a control gate over the floating gate; and
- c. a dielectric disposed between the control gate and the floating gate, the dielectric comprising a layer of silicon oxide and a discrete layer of silicon oxynitride formed on the layer of silicon oxide, the layer of oxynitride having a refractory index of between 1.84 and 1.95.
- 2. A floating gate memory device, comprising:
- a. a silicon substrate;
- b. a floating gate over the silicon substrate;
- c. a channel region in the substrate beneath the floating gate;
- d. a control gate over the floating gate;
- e. a dielectric disposed between the control gate and the floating gate, the dielectric comprising a layer of silicon oxide and a discrete layer of silicon oxynitride formed on the layer of silicon oxide, the layer of silicon oxynitride having a refractory index of between 1.84 and 1.95; and
- f. source and drain regions in the substrate adjacent to the channel region.
- 3. A floating gate memory device according to claim 2, wherein the dielectric further comprises a second layer of silicon oxide formed on the layer of silicon oxynitride.
CROSS REFERENCE TO RELATED APPLICATIONS
This is a continuation-in-part of U.S. application Ser. No. 08/349,745 filed Dec. 5, 1994, now abandoned, entitled Nonvolatile Floating Gate Memory With Improved Interpoly Dielectric.
US Referenced Citations (6)
Non-Patent Literature Citations (1)
Entry |
P. Burkhardt, "Composite Silicon Dioxide-Silicon Oxynitride Insulating Layer," IBM Tech. Discl. Bull., vol. 13, #1, Jun. 1970, p. 21. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
349745 |
Dec 1994 |
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