Nonvolatile memory device, layer deposition apparatus and method of fabricating a nonvolatile memory device using the same

Abstract

Provided are a nonvolatile memory device, a layer deposition apparatus and a method of fabricating a nonvolatile memory device using the same. The apparatus may include a chamber capable of holding a substrate, a particle-discharging target discharging particles toward the substrate, and a first ion beam gun accelerating a first plurality of ions and irradiating the accelerated ions toward the substrate. The method of fabricating a nonvolatile memory device may include discharging particles from a target toward a substrate, accelerating and irradiating a first plurality of ions toward the substrate, forming a reaction product by reacting the discharged particles and the accelerated and irradiated first plurality of ions, and forming a data storage layer having a deposited layer on the substrate. The nonvolatile memory device may include a data storage layer including a transition metal oxide layer formed by reacting discharged transition metal particles and accelerated and irradiated oxygen ions.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings. FIGS. 1-7 represent non-limiting, example embodiments as described herein.

FIG. 1 is a diagram illustrating a cross-sectional view of a conventional layer deposition apparatus;

FIG. 2 is a diagram illustrating a cross-sectional view of a layer deposition apparatus according to example embodiments;

FIGS. 3A through 3E are diagrams illustrating cross-sectional view of a method of fabricating a nonvolatile memory device according to example embodiments;

FIG. 4 is a diagram illustrating a cross-sectional view of a nonvolatile memory device fabricated using the method shown in FIGS. 3A through 3E according to example embodiments;

FIG. 5A is a graph illustrating the current-voltage characteristics of transition metal oxide layers formed using a conventional layer deposition apparatus;

FIG. 5B is a graph illustrating the current-voltage characteristics of transition metal oxide layers formed using a layer deposition apparatus according to example embodiments;

FIG. 6 is a graph illustrating a resistance switching characteristic of a transition metal oxide layer formed using a layer deposition apparatus according to example embodiments; and

FIGS. 7A is an atomic force microscope (AFM) image illustrating transition metal oxide layers formed using a conventional layer deposition apparatus; and

FIG. 7B is an atomic force microscope (AFM) image illustrating transition metal oxide layers formed using a layer deposition apparatus according to example embodiments.

Claims

1. A layer deposition apparatus, comprising: a chamber capable of holding a substrate;a particle-discharging target directed toward the substrate, wherein the target discharges particles as a primary source material for forming a deposited layer; anda first ion beam gun accelerating a first plurality of ions and irradiating the accelerated ions toward the substrate, wherein the accelerated ions are a secondary source material for forming the deposited layer.

2. The apparatus of claim 1, wherein the particles are transition metal particles, the accelerated ions are oxygen ions, the first ion beam gun is an oxygen ion beam gun and the deposited layer is a transition oxide metal layer.

3. The apparatus of claim 1, further comprising a second ion beam gun directed at the particle-discharging target, where the second ion bean gun accelerates and irradiates a second plurality of ions toward the particle-discharging target.

4. The apparatus of claim 3, wherein the second ion beam gun is an argon beam gun, and the second plurality of ions are argon ions.

5. The apparatus of claim 1, wherein an inner area of the chamber is maintained at room temperature.

6. The apparatus of claim 1, wherein an inner pressure of the chamber is maintained 10−4 torr or lower.

7. The apparatus of claim 1, wherein the substrate is formed of a material deformable by heat.

8. The apparatus of claim 7, wherein the material is plastic.

9. A method of fabricating a nonvolatile memory device, comprising: discharging particles from a target toward a substrate;accelerating and irradiating a first plurality of ions toward the substrate;forming a reaction product by reacting the discharged particles and the accelerated and irradiated first plurality of ions; andforming a data storage layer including a deposited layer on the substrate, wherein the deposited layer is formed by depositing the reaction product on the substrate.

10. The method of claim 9, wherein the particles are transition metal particles, the first plurality of ions are oxygen ions, the reaction product is a transition metal oxide and the deposited layer is a transition oxide metal layer.

11. The method of claim 9, wherein discharging the particles includes accelerating and irradiating a second plurality of ions toward the target.

12. The method of claim 11, wherein the second plurality of ions are argon ions.

13. The method of claim 9, wherein the deposited layer is formed at room temperature.

14. The method of claim 9, wherein accelerating and irradiating the first plurality of ions includes controlling an amount of the irradiated first plurality of ions.

15. A nonvolatile memory device, comprising: a data storage layer having a transition metal oxide layer formed by reacting transition metal particles discharged from a target toward a substrate and oxygen ions accelerated and irradiated toward the substrate, wherein the transition metal oxide layer is formed on the substrate.

16. The nonvolatile memory device of claim 15, wherein the transition metal oxide layer is formed of an oxide material selected from the group consisting of nickel (Ni), vanadium (V), zinc (Zn), niobium (Nb), titanium (Ti), tungsten (W), cobalt (Co), hafnium (Hf) and copper (Cu).

17. The nonvolatile memory device of claim 15, wherein the transition metal oxide layer is formed at room temperature.

18. The nonvolatile memory device of claim 15, wherein the substrate is formed of a material deformable by heat.

19. The nonvolatile memory device of claim 18, wherein the material is plastic.

20. The nonvolatile memory device of claim 15, wherein transition metal oxide layer exhibits a reset characteristic.