by physical vapor deposition

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H01L45/1625

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1625by physical vapor deposition

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Patents Grantslast 30 patents

Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for and method of fabricating semiconductor device
- Patent number 11,600,776
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Jaeho Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming memory structures
- Patent number 11,575,085
- Issue date Feb 7, 2023
- Micron Technology, Inc.
- Andrea Gotti
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory cell having a low forming voltage
- Patent number 11,527,717
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching memory including resistive switching layer fabr...
- Patent number 11,522,134
- Issue date Dec 6, 2022
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo Hong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Resistive random access memory device and methods of fabrication
- Patent number 11,502,254
- Issue date Nov 15, 2022
- Intel Corporation
- Nathan Strutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of selector on confined phase change memory
- Patent number 11,437,571
- Issue date Sep 6, 2022
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with switching multi-layer st...
- Patent number 11,430,948
- Issue date Aug 30, 2022
- Intel Corporation
- Timothy Glassman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal filament memory cells
- Patent number 11,430,949
- Issue date Aug 30, 2022
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple memory states device and method of making same
- Patent number 11,386,953
- Issue date Jul 12, 2022
- Cyberswarm, Inc.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Grant
Projected memory device with carbon-based projection component
- Patent number 11,251,370
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistance random access memory and method for fabricating the same
- Patent number 11,245,074
- Issue date Feb 8, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching random access memory with asymmetric source and...
- Patent number 11,239,279
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-Chieh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pillar-based memory hardmask smoothing and stress reduction
- Patent number 11,223,008
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Michael Rizzolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching element, variable resistance memory device, and method of...
- Patent number 11,211,427
- Issue date Dec 28, 2021
- Samsung Electronics Co., Ltd.
- Jinwoo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled nanotube electrode for low power multistage atomic switch
- Patent number 11,201,283
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,158,790
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance variable memory device with nanoparticle electrode and m...
- Patent number 11,158,796
- Issue date Oct 26, 2021
- OVONYX MEMORY TECHNOLOGY, LLC
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Physical unclonable functions with copper-silicon oxide programmabl...
- Patent number 11,127,694
- Issue date Sep 21, 2021
- Arizona Board of Regents on behalf of Arizona State University
- Michael Kozicki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,107,986
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Materials and components in phase change memory devices
- Patent number 11,107,985
- Issue date Aug 31, 2021
- Intel Corporation
- Valter Soncini
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,063,214
- Issue date Jul 13, 2021
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase-change memory cell with vanadium oxide based switching layer
- Patent number 11,056,644
- Issue date Jul 6, 2021
- Huazhong University of Science & Technology
- Xiangshui Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confining filament at pillar center for memory devices
- Patent number 11,043,634
- Issue date Jun 22, 2021
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tightly integrated 1T1R ReRAM for planar technology
- Patent number 11,038,103
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Collimator, fabrication apparatus including the same, and method of...
- Patent number 11,017,989
- Issue date May 25, 2021
- Samsung Electronics Co., Ltd.
- Jiho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching resistor and method of making such a device
- Patent number 11,004,506
- Issue date May 11, 2021
- UCL BUSINESS LTD
- Anthony Kenyon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming resistive memory elements
- Patent number 10,991,882
- Issue date Apr 27, 2021
- Micron Technology, Inc.
- Christopher W. Petz
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Memristor device and a method of fabrication thereof
- Patent number 10,985,318
- Issue date Apr 20, 2021
- Royal Melbourne Institute of Technology
- Madhu Bhaskaran
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240237565
- Publication date Jul 11, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240138275
- Publication date Apr 25, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS
- Publication number 20240090350
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20240074337
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230422642
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230354724
- Publication date Nov 2, 2023
- United Microelectronics Corp.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL
- Publication number 20230129619
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION METHOD OF SILICON-BASED MOLECULAR BEAM HETEROEPITAXY MA...
- Publication number 20230081176
- Publication date Mar 16, 2023
- Hebei University
- Xiaobing YAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
WRAP-AROUND PROJECTION LINER FOR AI DEVICE
- Publication number 20230070462
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME
- Publication number 20230057572
- Publication date Feb 23, 2023
- United Microelectronics Corp.
- Shu-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEX OXIDE MEMRISTIVE MATERIAL, MEMRISTOR COMPRISING SUCH MATERI...
- Publication number 20230049235
- Publication date Feb 16, 2023
- TURUN YLIOPISTO
- Petriina PATURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220415968
- Publication date Dec 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF SELECTOR ON CONFINED PHASE CHANGE MEMORY
- Publication number 20220367797
- Publication date Nov 17, 2022
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE
- Publication number 20220367810
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH MULTI-COMPONENT ELECTRODES
- Publication number 20220367803
- Publication date Nov 17, 2022
- Tetramem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE MEMORY STATES DEVICE AND METHOD OF MAKING SAME
- Publication number 20220343974
- Publication date Oct 27, 2022
- Cyberswarm, Inc.
- Viorel-Georgel DUMITRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DETERMINING A MANUFACTURING PARAMETER OF A RESISTIVE RAN...
- Publication number 20220336017
- Publication date Oct 20, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Gabriel MOLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AN OXRAM TYPE RESISTIVE MEMORY CELL
- Publication number 20220336744
- Publication date Oct 20, 2022
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES AL TERNATIVES
- Gabriel MOLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY CELL AND PREPARATION MET...
- Publication number 20220328761
- Publication date Oct 13, 2022
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Sannian SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH ENGINEERED ELECTRONIC D...
- Publication number 20220320430
- Publication date Oct 6, 2022
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY HAVING CONFINED FILAMENT FORMATION AND M...
- Publication number 20220320432
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTI...
- Publication number 20220320431
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20220263020
- Publication date Aug 18, 2022
- SK HYNIX INC.
- Ji Sun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARTIFICIAL SENSORY NERVOUS CIRCUIT AND MANUFACTURING METHOD THEREOF
- Publication number 20220261621
- Publication date Aug 18, 2022
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Qi LIU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS OF FORMING ELECTRONIC DEVICES, AND RELATED ELECTRONIC DEVIC...
- Publication number 20220254834
- Publication date Aug 11, 2022
- Micron Technology, Inc.
- David A. Daycock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SELECTOR
- Publication number 20220231225
- Publication date Jul 21, 2022
- Commissariat a I'Energie Atomique et aux Energies Alternatives
- Anthonin Verdy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPUTTERING TARGET INCLUDING CARBON-DOPED GST AND METHOD FOR FABRICA...
- Publication number 20220190241
- Publication date Jun 16, 2022
- SK HYNIX INC.
- Jun Ku AHN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Resistive Switching Random Access Memory with Asymmetric Source and...
- Publication number 20220157889
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Chieh YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICAL UNCLONABLE FUNCTIONS WITH COPPER-SILICON OXIDE PROGRAMMABL...
- Publication number 20220148982
- Publication date May 12, 2022
- Michael KOZICKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PILLAR-BASED MEMORY HARDMASK SMOOTHING AND STRESS REDUCTION
- Publication number 20220109099
- Publication date Apr 7, 2022
- International Business Machines Corporation
- Michael Rizzolo
- H01 - BASIC ELECTRIC ELEMENTS

by physical vapor deposition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Two-terminal reversibly switchable memory device

Resistive random access memory device

Apparatus for and method of fabricating semiconductor device

Techniques for forming memory structures

Resistive memory cell having a low forming voltage

Resistive switching memory including resistive switching layer fabr...

Resistive random access memory device and methods of fabrication

Integration of selector on confined phase change memory

Resistive random access memory device with switching multi-layer st...

Metal filament memory cells

Multiple memory states device and method of making same

Projected memory device with carbon-based projection component

Resistance random access memory and method for fabricating the same

Resistive switching random access memory with asymmetric source and...

Pillar-based memory hardmask smoothing and stress reduction

Switching element, variable resistance memory device, and method of...

Scaled nanotube electrode for low power multistage atomic switch

Resistive random access memory device

Resistance variable memory device with nanoparticle electrode and m...

Physical unclonable functions with copper-silicon oxide programmabl...

Resistive random access memory device

Materials and components in phase change memory devices

Two-terminal reversibly switchable memory device

Phase-change memory cell with vanadium oxide based switching layer

Confining filament at pillar center for memory devices

Tightly integrated 1T1R ReRAM for planar technology

Collimator, fabrication apparatus including the same, and method of...

Switching resistor and method of making such a device

Methods of forming resistive memory elements

Memristor device and a method of fabrication thereof

Patents Applicationslast 30 patents

ANALOG PROGRAMMABLE RESISTIVE MEMORY

ANALOG PROGRAMMABLE RESISTIVE MEMORY

MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

MEMORY DEVICE AND METHOD OF MAKING THE SAME

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

RESISTIVE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF

CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL

PREPARATION METHOD OF SILICON-BASED MOLECULAR BEAM HETEROEPITAXY MA...

WRAP-AROUND PROJECTION LINER FOR AI DEVICE

RESISTIVE RANDOM-ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME

COMPLEX OXIDE MEMRISTIVE MATERIAL, MEMRISTOR COMPRISING SUCH MATERI...

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATION OF SELECTOR ON CONFINED PHASE CHANGE MEMORY

RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE

RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH MULTI-COMPONENT ELECTRODES

MULTIPLE MEMORY STATES DEVICE AND METHOD OF MAKING SAME

METHOD FOR DETERMINING A MANUFACTURING PARAMETER OF A RESISTIVE RAN...

METHOD FOR MANUFACTURING AN OXRAM TYPE RESISTIVE MEMORY CELL

PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY CELL AND PREPARATION MET...

RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH ENGINEERED ELECTRONIC D...

RESISTIVE SWITCHING MEMORY HAVING CONFINED FILAMENT FORMATION AND M...

VARYING NITROGEN CONTENT IN SWITCHING LAYER OF TWO-TERMINAL RESISTI...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

ARTIFICIAL SENSORY NERVOUS CIRCUIT AND MANUFACTURING METHOD THEREOF

METHODS OF FORMING ELECTRONIC DEVICES, AND RELATED ELECTRONIC DEVIC...

MEMORY SELECTOR

SPUTTERING TARGET INCLUDING CARBON-DOPED GST AND METHOD FOR FABRICA...

Resistive Switching Random Access Memory with Asymmetric Source and...

PHYSICAL UNCLONABLE FUNCTIONS WITH COPPER-SILICON OXIDE PROGRAMMABL...

PILLAR-BASED MEMORY HARDMASK SMOOTHING AND STRESS REDUCTION