"GaAs/AsGaAs Quantum Well Lasers with Active Regions Grown by Atomic Layer Epitaxy", Applied Physics Letters, S. P. Den Baars et al., 1987, vol. 51, No. 9, pp. 1530-1532. |
"Perpendicular-Incidence Null Ellipsometry of Surfaces with Arbitrary Anisotropy", Optical Engineering, R. M. A. Azzam, 1981, vol. 20, pp. 58-61. |
"Perpendicular-Incidence Ellipsometry (PIPE) of Surfaces with Arbitrary Anisotropy", Journal Optics (Paris), R. M. A. Azzam, 1981, vol. 12, pp. 317-321. |
"Anisotropies in the Above-Band-Gap Optical Spectra of Cubic Semiconductors", Physical Review Letters, D. E. Aspnes et al., 1985, vol. 54, pp. 1956-1959. |
"Above-Bandgap Optical Anisotropies in Cubic Semiconductors: A Visible-Near Ultraviolet Probe of Surfaces", Journal of Vacuum Science and Technology, D. E. Aspnes, 1985, vol. B3, pp. 1498-1506. |
"Optical Reflectance and RHEED Transients During MBE Growth on (001) GaAS", Materials Research Society Symposium Proceedings, D. E. Aspnes et al., 10/9/87, vol. 91, pp. 57-62. |
"Optical-Reflectance and Electron-Diffraction Studies of Molecular-Beam-Epitaxy Growth Transients on GaAs (001)", Physical Review Letters, D. E. Aspnes et al., 1987, vol. 59, pp. 1687-1690. |
"Reflectance-Difference Spectroscopy System for Real-Time Measurements of Crystal Growth", Applied Physics Letters, D. E. Aspnes et al., 1988, vol. 52, pp. 957-959. |
"Optical Studies of Molecular-Beam Epitaxy Growth of GaAs and AlAs", Journal of Vacuum Science and Technology, D. E. Aspnes et al., 1988, vol. B6, pp. 1127-1131. |
"Oscillations in the Optical Response of (001) GaAs and AlGaAs Surfaces During Crystal Growth by Molecular Beam Epitaxy", Applied Physics Letters, J. P. Harbison et al., 1988, vol. 52, pp. 2046-2048. |
"Optical Reflectance Measurements of Transients During Molecular Beam Epitaxial Growth on (001) GaAs", Journal of Vacuum Science and Technology, J. P. Harbison et al., 1988, vol. B6, pp. 740-742. |
"Application of Reflectance Difference Spectroscopy to Molecular-Beam Epitaxy Growth of GaAs and AlAs", Journal of Vacuum Science and Technology, D. E. Aspnes et al., 1988, vol. A6, pp. 1327-1332. |
"Molecular-Beam Epitaxy Growth of Tilted GaAs/AlAs Superlattices by Deposition of Fractional Monolayer on Vicinal (001) Substrates", Journal of Vacuum Science and Technology, J. M. Gaines et al., 1988, vol. B6, pp. 1378-1331. |
"GaAs/AsGaAs Quantum Well Lasers with Active Regions Grown by Atomic Layer Epitaxy'", Applied Physics Letters, S. P. Den Baars et al., 1987, vol. 51, No. 9, pp. 1530-1532. |
"Perpendicular-Incidence Null Ellipsometry of Surfaces with Arbitrary Anisotropy", Optical Engineering, R. M. A. Azzam, 1981, vol. 20, pp. 58-61. |
"Perpendicular-Incidence Ellipsometry (PIPE) of Surfaces with Arbitrary Anisotropy", Journal Optics (Paris), R. M. A. Azzam, 1981, vol. 12, pp. 317-321. |
"Anisotropies in the Above-Band-Gap Optical Spectra of Cubic Semiconductors", Physical Review Letters, D. E. Aspnes et al., 1985, vol. 54, pp. 1956-1959. |
"Above-Bandgap Optical Anisotropies in Cubic Semiconductors: A Visible-Near Ultraviolet Probe of Surfaces", Journal of Vacuum Science and Technology, D. E. Aspnes, 1985, vol. B3, pp. 1498-1506. |
"Optical Reflectance and RHEED Transients During MBE Growth on (001) GaAs", Materials Research Society Symposium Proceedings, D. E. Aspnes et al., 10/9/87, vol. 91, pp. 57-62. |
"Optical-Reflectance and Electron-Diffraction Studies of Molecular-Beam-Epitaxy Growth Transients on GaAs (001)", Physical Review Letters, D. E. Aspnes et al., 1987, vol. 59, pp. 1687-1690. |
"Reflectance-Difference Spectroscopy System for Real-Time Measurements of Crystal Growth", Applied Physics Letters, D E. Aspnes et al., 1988, vol. 52, pp. 957-959. |
"Optical Studies of Molecular-Beam Epitaxy Growth of GaAs and AlAs", Journal of Vacuum Science and Technology, D. E. Aspnes et al., 1988, vol. B6, pp. 1127-1131. |
"Oscillations in the Optical Response of (001) GaAs and AlGaAs Surfaces During Crystal Growth by Molecular Beam Epitaxy", Applied Physics Letters, J. P. Harbison et al., 1988, vol. 52, pp. 2046-2048. |
"Optical Reflectance Measurements of Transients During Molecular Beam Epitaxial Growth on (001) GaAs", Journal of Vacuum Science and Technology, J. P. Harbison et al., 1988, Vol. B6, pp. 740-742. |
"Application of Reflectance Difference Spectroscopy to Molecular-Beam Epitaxy Growth of GaAs and AlAs", Journal of Vacuum Science and Technology, D. E. Aspnes et al., 1988, vol. A6, pp. 1327-1332. |
"Molecular-Beam Epitaxy Growth of Tilted GaAs/AlAs Superlattices by Deposition of Fractional Monolayer on Vicinal (001) Substrates", Journal of Vacuum Science and Technology, J. M. Gaines et al., 1988, vol. B6, pp. 1378-1331. |