Claims
- 1. A precursor structure formed during the course of the integrated circuit manufacturing process, said structure comprising:
a substrate having a surface; a layer comprising an antireflective compound on said surface, said antireflective compound layer being formed on said surface by a chemical vapor deposition process; and a photoresist layer on said antireflective compound layer.
- 2. The structure of claim 1, wherein said antireflective compound comprises two cyclic moieties joined together by at least one alkyl group, said alkyl group comprising from 2-4 carbon atoms.
- 3. The structure of claim 2, wherein at least one of said cyclic moieties is aromatic.
- 4. The structure of claim 3, wherein said aromatic moieties are individually selected from the group consisting of benzene, naphthalene, anthracene, thiophene, furan, and pyrrole moieties.
- 5. The structure of claim 4, wherein at least one of said aromatic moieties is benzene.
- 6. The structure of claim 5, wherein said compound is 1,4-dixylylene.
- 7. The structure of claim 2, wherein said alkyl group is an ethyl group.
- 8. The structure of claim 2, wherein the strain energy of said compound is at least about 10 kcal/mol.
- 9. The structure of claim 1, wherein said substrate comprises a silicon wafer.
- 10. The structure of claim 1, wherein the antireflective compound layer on said substrate surface has a thickness of from about 300-5000 Å.
- 11. The structure of claim 1, wherein said antireflective compound is substantially insoluble in solvents utilized in said photoresist layer.
- 12. The structure of claim 1, wherein the antireflective compound layer deposited on said substrate surface absorbs at least about 90% of light at a wavelength of from about 150-500 nm.
- 13. The structure of claim 1, wherein the antireflective compound layer deposited on said substrate surface will be subjected to light of a predetermined wavelength and has a k value of at least about 0.1 at said predetermined wavelength.
- 14. The structure of claim 1, wherein the antireflective compound layer deposited on said substrate surface has a percent conformality of at least about 85%.
- 15. The structure of claim 14, wherein said substrate comprises raised features and structure defining contact or via holes and said antireflective compound layer is deposited on said features and said hole-defining structure.
- 16. The structure of claim 1, wherein said antireflective compound has the structure of Formula II.
RELATED APPLICATIONS
[0001] This application is a divisional of U.S. patent application No. 09/745,350, filed Dec. 21, 2000, which is a continuation-in-part of U.S. patent application No. 09/511,421, filed Feb. 22, 2000, now abandoned, both incorporated by reference herein.
Divisions (1)
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Number |
Date |
Country |
Parent |
09745350 |
Dec 2000 |
US |
Child |
10185694 |
Jun 2002 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09511421 |
Feb 2000 |
US |
Child |
09745350 |
Dec 2000 |
US |