Claims
- 1. A method of forming a precursor for use in manufacturing integrated circuits comprising the steps of:
providing a quantity of an antireflective compound and a substrate having a surface onto which said compound is to be applied, said antireflective compound having the formula 9wherein: R represents a linkage group; and each X is individually selected from the group consisting of hydrogen, the halogens, nitro groups, amino groups, acetamido groups, substituted and unsubstituted cyclic and heterocyclic groups, and COR1, where R1 is selected from the group consisting of hydrogen, substituted and unsubstituted phenyl groups, substituted and unsubstituted alkyl groups, cinnamoyl, naphthoyl, acryloyl, methacryloyl, furoyl, and thiophenecarbonyl groups; and subjecting said antireflective compound to a chemical vapor deposition process so as to deposit said antireflective compound in a layer on said substrate surface.
- 2. The method of claim 1, further including the step of applying a photoresist layer to said antireflective compound layer.
- 3. The method of claim 1, wherein at least one of said cyclic moieties is heterocyclic or aromatic.
- 4. The method of claim 3, wherein said cyclic moieties are selected from the group consisting of benzene, naphthalene, anthracene, phenanthrene, pyrene, pyridine, pyridazine, pyrimidine, pyrazine, thiazole, isothiazole, oxazole, isooxazole, thiophene, furan, and pyrrole.
- 5. The method of claim 1, wherein the strain energy of said antireflective compound is at least about 10 kcal/mol.
- 6. The method of claim 1, wherein said substrate comprises a silicon wafer.
- 7. The method of claim 1, wherein said chemical vapor deposition process comprises the steps of:
(a) subjecting said antireflective compound to a sufficient temperature and pressure to form said antireflective compound into a vapor; (b) cleaving the resulting vaporized compound; and (c) depositing said cleaved compound onto said substrate surface.
- 8. The method of claim 7, wherein said subjecting step (a) is carried out at a temperature of from about 35-160° C. and a pressure of from about 2-50 mTorr.
- 9. The method of claim 7, wherein said cleaving step (b) comprises breaking a bond between two of the atoms of each R.
- 10. The method of claim 7, wherein said cleaving step (b) comprises pyrolizing said antireflective compound.
- 11. The method of claim 10, wherein said pyrolizing step comprises heating said antireflective compound to a temperature of from about 580-700° C.
- 12. The method of claim 7, wherein said causing step (c) comprises subjecting said cleaved compound to a temperature of from about 20-25° C.
- 13. The method of claim 1, wherein said antireflective compound layer is substantially insoluble in solvents utilized in said photoresist layer.
- 14. The method of claim 1, further including the steps of:
exposing at least a portion of said photoresist layer to activating radiation; developing said exposed photoresist layer; and etching said developed photoresist layer.
- 15. The method of claim 1, wherein the antireflective compound layer deposited on said substrate surface absorbs at least about 90% of light at a wavelength of from about 150-500 nm.
- 16. The method of claim 1, wherein the antireflective compound layer deposited on said substrate surface will be subjected to light of a predetermined wavelength and has a k value of at least about 0.1 at said predetermined wavelength.
- 17. The method of claim 1, wherein the antireflective compound layer deposited on said substrate surface has a percent conformality of at least about 85%.
- 18. The method of claim 1, wherein said substrate comprises raised features and structure defining contact or via holes, and said subjecting step comprises depositing a quantity of said antireflective compound in a layer on said features and said hole-defining structure.
- 19. A method of forming a light attenuating compound comprising the steps of:
reacting at least two cyclic compounds with a halogenating agent in the presence of a catalyst and a solvent so as to halogenate the cyclic compounds; and reacting the cyclic compounds so as to yield an antireflective compound comprising two cyclic moieties joined via a linkage group bonded both to a first location on one of the cyclic moieties and to a first location on the other of the cyclic moieties.
- 20. The method of claim 19, wherein said halogenating agent is selected from the group consisting of brominating and chlorinating agents.
- 21. The method of claim 20, wherein said halogenating agent is N-bromosuccinimide.
- 22. The method of claim 19, wherein said catalyst is benzoyl peroxide.
- 23. The method of claim 19, wherein said solvent is carbon tetrachloride.
- 24. The method of claim 19, wherein said catalyst is cetyltrimethylammoniumbromide and said first reacting step is also carried out in the presence of an alkyl-donating compound capable of reacting with the cyclic compounds so as to add a C2 or higher alkyl group to each of said cyclic compounds.
- 25. The method of claim 24, wherein said alkyl-donating compound is paraformaldehyde.
- 26. The method of claim 19, wherein the antireflective compound formed in said second reacting step has the formula
RELATED APPLICATIONS
[0001] This application is a divisional of U.S. patent application Ser. No.09/745,350, filed Dec. 21, 2000, which is a continuation-in-part of U.S. patent application Ser. No. 09/511,421, filed Feb. 22, 2000, now abandoned, both incorporated by reference herein.
Divisions (1)
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Number |
Date |
Country |
Parent |
09745350 |
Dec 2000 |
US |
Child |
10185623 |
Jun 2002 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09511421 |
Feb 2000 |
US |
Child |
09745350 |
Dec 2000 |
US |