Claims
- 1. A method of forming a precursor for use in manufacturing integrated circuits comprising the steps of:
providing a quantity of an antireflective compound and a substrate having a surface onto which said compound is to be applied; subjecting said antireflective compound to a chemical vapor deposition process so as to deposit said antireflective compound in a layer on said substrate surface; and applying a photoresist layer to said antireflective compound layer to yield the circuit precursor.
- 2. The method of claim 1, wherein said antireflective compound comprises two cyclic moieties joined together by at least one alkyl group, wherein said alkyl group comprises from about 2-4 carbon atoms.
- 3. The method of claim 2, wherein at least one of said cyclic moieties is aromatic.
- 4. The method of claim 3, wherein said aromatic moieties are individually selected from the group consisting of benzene, naphthalene, anthracene, thiophene, furan, and pyrrole moieties.
- 5. The method of claim 4, wherein at least one of said aromatic moieties is benzene.
- 6. The method of claim 5, wherein said compound is 1,4-dixylylene.
- 7. The method of claim 2, wherein said alkyl group is an ethyl group.
- 8. The method of claim 2, wherein the strain energy of said compound is at least than about 10 kcal/mol.
- 9. The method of claim 1, wherein said substrate comprises a silicon wafer.
- 10. The method of claim 2, wherein said chemical vapor deposition process comprises the steps of:
(a) subjecting said compound to a sufficient temperature and pressure to form said compound into a vapor; (b) cleaving the resulting vaporized compound; and (c) depositing said cleaved compound on said substrate surface.
- 11. The method of claim 10, wherein said subjecting step (a) is carried out at a temperature of from about 35-160° C. and a pressure of from about 2-50 mTorr.
- 12. The method of claim 10, wherein said cleaving step (b) comprises breaking a bond between two of the carbon atoms of said alkyl group.
- 13. The method of claim 10, wherein said cleaving step (b) comprises pyrolizing said compound.
- 14. The method of claim 13, wherein said pyrolizing step comprises heating said compound to a temperature of from about 580-700° C.
- 15. The method of claim 10, wherein said causing step (c) comprises subjecting said cleaved compound to a temperature of from about 20-25 ° C.
- 16. The method of claim 1, wherein the antireflective compound layer on said substrate surface after said applying step has a thickness of from about 300-5000 Å.
- 17. The method of claim 1, wherein said antireflective compound layer is substantially insoluble in solvents utilized in said photoresist layer.
- 18. The method of claim 1, further including the steps of:
exposing at least a portion of said photoresist layer to activating radiation; developing said exposed photoresist layer; and etching said developed photoresist layer.
- 19. The method of claim 1, wherein the antireflective compound layer deposited on said substrate surface absorbs at least about 90% of light at a wavelength of from about 150-500 nm.
- 20. The method of claim 1, wherein the antireflective compound layer deposited on said substrate surface will be subjected to light of a predetermined wavelength and has a k value of at least about 0.1 at said predetermined wavelength.
- 21. The method of claim 1, wherein the antireflective compound layer deposited on said substrate surface has a percent conformality of at least about 85%.
- 22. The method of claim 1, wherein said substrate comprises raised features and structure defining contact or via holes, and said subjecting step comprises depositing a quantity of said antireflective compound in a layer on said features and said hole-defining structure.
- 23. The method of claim 1, wherein said antireflective compound has the structure of Formula II.
RELATED APPLICATION
[0001] This application is a divisional of U.S. patent application Ser. No. 09/745,350, filed Dec. 21, 2000, which is a continuation-in-part of U.S. patent application Ser. No. 09/511,421, filed Feb. 22, 2000, now abandoned, both incorporated by reference herein.
Divisions (1)
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Number |
Date |
Country |
Parent |
09745350 |
Dec 2000 |
US |
Child |
10185622 |
Jun 2002 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09511421 |
Feb 2000 |
US |
Child |
09745350 |
Dec 2000 |
US |