Claims
- 1. A method for fabricating a dielectric film having low-k values on a semiconductor or integrated circuit surface comprising applying to said surface a substituted organosilane compound precursor, wherein said precursor reacts with and deposits on said surface said dielectric film.
- 2. The method as claimed in claim 1 wherein said substituted organosilane compounds have the formula selected from the group consisting of:
- 3. The method as claimed in claim 2 wherein R1 in said substituted organosilane compound is cyclic.
- 4. The method as claimed in claim 3 wherein said substituted organosilane compound is selected from the group consisting of cyclopropylsilane, cyclobutylsilane, cyclopentylsilane, cyclohexylsilane, cyclooctylsilane, diphenylsilane, dicyclohexylsilane.
- 5. The method as claimed in claim 2 wherein R1 in said substituted organosilane compound is acyclic.
- 6. The method as claimed in claim 5 wherein said substituted organosilane compound is selected from the group consisting of n-butylmethylsilane, tert-butylmethylsilane, tert-butylphenylsilane.
- 7. The method as claimed in claim 1 wherein said dielectric film has a k value below 2.5.
- 8. The method as claimed in claim 2 wherein substituted organosilane compound is selected from the group consisting of disilylmethane and disilylbenzene.
- 9. The method as claimed in claim 2 wherein said substituted organosilane is selected from the group consisting of 1-silacyclobutane, 1-silacyclopentane and 1-silacyclohexane.
- 10. The method as claimed in claim 7 wherein said dielectric film has a k value in the range of about 2.0 to about 2.5.
- 11. The method as claimed in claim 1 wherein said substituted organosilane compound precursor is deposited on the surface of the semiconductor or integrated circuit using chemical vapor deposition.
- 12. The method as claimed in claim 1 wherein said chemical vapor deposition is pyrolytic or plasma-assisted.
- 13. The method as claimed in claim 1 wherein said substituted organosilane compound comprises a mixture of substituted organosilane compounds.
- 14. The method as claimed in claim 12 wherein said precursor is in either the vapor phase or the liquid phase prior to deposition.
- 15. The method as claimed in claim 12 wherein said precursor is a single precursor for the source of silicon and carbon atoms.
- 16. The method as claimed in claim 1 further comprising applying said precursor with an additional oxidant or carrier compound.
Parent Case Info
[0001] This application claims priority from Provisional Patent Application Serial No. 60/247,396 filed Nov. 9, 2000.
Provisional Applications (1)
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Number |
Date |
Country |
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60247396 |
Nov 2000 |
US |