Claims
- 1. A pattern forming method using a charged particle beam process comprising:irradiating a workpiece with a focused charged particle beam in an environment of a reactive gas in a processing chamber for the local reactive processing of portions of the workpiece irradiated with the focused charged particle beam to form a pattern, wherein the reactive gas which is at least one of adsorbed by and adhered to a surface of the workpiece is removed from the surface of the workpiece by heating the workpiece with one of a mercury vapor lamp and an infrared lamp in an environment of an inert gas in a load-lock chamber connected through a gate valve to the processing chamber, after the pattern has been formed in the processing chamber, by a reactive gas removing process before taking out the workpiece from the load-lock chamber into the atmosphere.
- 2. The pattern forming method using a charged particle beam process according to claim 1, wherein the one of the mercury vapor lamp and the infrared lamp is provided outside of the load-lock chamber so as to heat the workpiece by irradiation through a transparent window of the load-lock chamber.
- 3. The pattern forming method using a charged particle beam process according to claim 1, wherein the reactive gas removing process which is carried out in the load-lock chamber includes heating the workpiece in an environment on the order of 1×10−4 Pa in the load-lock chamber prior to exposing the workpiece to the atmosphere.
- 4. The pattern forming method using a charged particle beam process comprising:irradiating a workpiece with a focused charged particle beam in an environment of a reactive gas in a processing chamber for the local reactive processing of portions of the workpiece irradiated with the focused charged particle beam to form a pattern, wherein the reactive gas which is at least one of adsorbed by and adhered to a surface of the workpiece is removed from the surface of the workpiece by heating the workpiece with one of a mercury vapor lamp and an infrared lamp in an environment of an inert gas in a load-lock chamber connected through a gate valve to the processing chamber, after the pattern has been formed in the processing chamber, by a reactive gas removing process before taking out the workpiece from the load-lock chamber into the atmosphere, and wherein the reactive gas removing process is an irradiating process which irradiates the surface of the workpiece with a focused charged particle beam in an environment of oxygen gas.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-011340 |
Jan 1996 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATION
This is a continuation of U.S. application Ser. No. 08/788,421, filed Jan. 27, 1997, now U.S. Pat. No. 5,976,328 the subject matter of which is incorporated by reference herein.
US Referenced Citations (9)
Foreign Referenced Citations (8)
Number |
Date |
Country |
61-79230 |
Apr 1986 |
JP |
61-133316 |
Jun 1986 |
JP |
61-160939 |
Jul 1986 |
JP |
62-86731 |
Apr 1987 |
JP |
1-169860 |
Jul 1989 |
JP |
2-135732 |
May 1990 |
JP |
3-225820 |
Oct 1991 |
JP |
4-75246 |
Mar 1992 |
JP |
Continuations (1)
|
Number |
Date |
Country |
Parent |
08/788421 |
Jan 1997 |
US |
Child |
09/417996 |
|
US |