Claims
- 1. A photosensitive resin composition adapted for forming a two-layer resist pattern when exposed to ultraviolet rays, said resin composition comprising:
- a substituted alkali-soluble siloxane polymer represented by the following structural formula: ##STR17## wherein X is CH.sub.3 CO--; R', R" and R'" are same or different groups and independently selected from the group consisting of hydroxyl and phenyl; and l, m and n are zero or positive integers with the restriction that l and m do not take zero concurrently;
- an ortho-diazonapthoquinone compound in an amount of 5% by weight to 30% by weight of the siloxane polymers,
- in admixture in a solvent selected from the group consisting of ethylcellosolve acetate and ethylcellosolve.
- 2. A high energy beam sensitive resin composition adapted for forming a two-layer resist pattern when exposed to a high energy beam, said resin composition comprising:
- a substituted alkali-soluble siloxane polymer represented by the following formula; ##STR18## wherein X is CH.sub.3 CO--; R', R" and R'" are same or different groups and independently selected from the group consisting of hydroxyl and phenyl, and l, m and n are zero or positive integers with the restriction that l and m do not take zero concurrently,
- a combination of a second polymer and a third polymer which acts as a dissolution inhibitor in an amount of 5% by weight to 30% by weight of the siloxane polymer, said second or third polymer being selected from the group respectively consisting of
- second polymer;
- said polymer each having a repeating unit represented by the formula of ##STR19## wherein R.sub.4 is hydrogen or alkyl or phenyl; Y is alkyl or silyl; Z is --SO.sub.2 --or O--COO; and p is zero or a positive integer,
- third polymer;
- said polymer each having a repeating unit represented by the formula of ##STR20## wherein R.sub.5 is hydrogen, alkyl, phenyl or alkyl containing silicon in admixture in a solvent selected from the group consisting of ethylcellosolve acetate and ethylcellosolve.
- 3. The photosensitive resin composition as set forth in claim 1, wherein said ortho-diazonaphthoquinone compound is represented by the general structural formula of: ##STR21## wherein Z is selected from the group consisting of: ##STR22##
- 4. The high energy beam sensitive resin composition as set forth in claim 2, wherein said dissolution inhibitor is selected from the group of polyethers consisting of:
- polybutenesulfone,
- polymethylpentenesulfone,
- polytrimethylsilylvinylsulfone,
- polycarbonates which are condensation polymerization
- products of 2,5-dimethylhexane-2-5-diol and
- p-benzenedimethanol
- silicon-containing polycarbonates,
- polycarbonates obtained by the reaction between
- ethylene oxide and CO.sub.2,
- polyethers produced by polymerization of formaldehyde,
- polyethers produced by polymerization of acetoaldehyde,
- polyethers produced by polymerization of hexanal and
- polyethers produced by polymerization of
- 3-trimethylsilylpropanal.
- 5. The high energy beam sensitive resin composition as set forth in claim 4, wherein said silicon-containing polycarbonate is selected from the group consisting of:
- .alpha.-trimethylsilyl-ethylene polycarbonate,
- .beta.-trimethylsilylisopropylene polycarbonate,
- .alpha.-triethylsilyl-ethylene polycarbonate, copolymers of .alpha.-trimethylsilyl-ethylene carbonate and .beta.-trimethylsilylisopropylene carbonate, copolymer of .alpha.-trimethylsilyl-ethylene carbonate and .alpha.-triethylsilyl-ethylene carbonate.
Priority Claims (5)
Number |
Date |
Country |
Kind |
61-25274 |
Feb 1986 |
JPX |
|
61-56363 |
Mar 1986 |
JPX |
|
61-65123 |
Mar 1986 |
JPX |
|
61-84683 |
Apr 1986 |
JPX |
|
61-136816 |
Jun 1986 |
JPX |
|
Parent Case Info
This application is a continuation, of application Ser. No. 07/497,790, filed Mar. 21, 1990, now abandoned, which is a continuation of application Ser. No. 07/233,983 filed Aug. 11, 1988 (abandoned), which is a continuation of application Ser. No. 07/009,475 filed Feb. 2, 1987 (abandoned).
US Referenced Citations (9)
Foreign Referenced Citations (4)
Number |
Date |
Country |
3544165 |
Jun 1986 |
DEX |
198446 |
Nov 1984 |
JPX |
191245 |
Sep 1985 |
JPX |
1238062 |
Oct 1986 |
JPX |
Non-Patent Literature Citations (3)
Entry |
Bowden, M. J., Solid State Technology, 24, 73 (1981). |
Hatzakis, M. et al., "Double Layer Resist Systems for High Resolution Lithography", Proc. Int. Conf. Microlitho., Lausanne, Switzerland, 1981. |
Reichmanis, E. et al., The Society of Photooptical Instru. Eng., (SPIC), 469, Advances in Resist Tech., p. 38, 1984. |
Continuations (3)
|
Number |
Date |
Country |
Parent |
497790 |
Mar 1990 |
|
Parent |
233983 |
Aug 1988 |
|
Parent |
9475 |
Feb 1987 |
|