Plasma processing of large workpieces

Abstract

An apparatus includes a chamber having a process zone. The chamber is configured to contain a substrate, an etching substance, and an antenna. The antenna is configured to activate the etching substance. The substrate includes a material formulated to be etched by the etching substance when the etching substance is activated. The apparatus also includes a transfer mechanism. The transfer mechanism is configured to move the substrate from a first position to a second position. A first portion of the substrate is disposed within the process zone and a second portion of the substrate is disposed outside the process zone when the substrate is in its first position. The first portion of the substrate is disposed outside the process zone and the second portion of the substrate is disposed inside the process zone when the substrate is in its second position. The size and geometry of the antenna can be chosen to allow the etching of a grounded substrate.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is described with reference to the accompanying drawings. In the drawings, like reference numbers indicate identical or functionally similar elements.

FIG. 1 is a schematic view of an apparatus according to an embodiment of the invention.

FIG. 2 is a perspective view of portions of an apparatus according to an embodiment of the invention.

FIG. 3 is a partial cut away view of the apparatus of FIG. 2.

FIG. 4 is a cross-sectional view of the antenna of the apparatus of FIG. 2 taken along the line A-A in FIG. 2.

FIGS. 5-10 are perspective views of antennas according to other embodiments of the invention.

FIG. 11 is a side view of a transfer mechanism and a substrate of the apparatus of FIG. 2.

FIG. 12 is a perspective cut away view of an apparatus according to another embodiment of the invention.

FIG. 13 is a top view of the grid of the apparatus of FIG. 12.

FIG. 14 is a side view of an apparatus according to another embodiment of the invention.

Claims

1. An apparatus for etching a substrate having a first portion and a second portion, comprising: a chamber having a process zone, the chamber being configured to contain a substrate, an etching substance, and an antenna;the antenna being configured to activate the etching substance;the etching substance being formulated to etch the substrate when the etching substance is activated; anda transfer mechanism, the transfer mechanism being configured to move the substrate from a first position to a second position, the first portion of the substrate being disposed within the process zone and the second portion of the substrate being disposed outside the process zone when the substrate is in its first position, the first portion of the substrate being disposed outside the process zone and the second portion disposed within the process zone when the substrate is in its second position.

2. The apparatus of claim 1, further comprising a control mechanism configured to control the pressure within the chamber.

3. The apparatus of claim 1, wherein the etching substance includes a plasma, a gas, or a mixture of plasma and gas.

4. The apparatus of claim 1, wherein the etching substance includes at lease one of a direct current plasma and a microwave plasma.

5. The apparatus of claim 1, wherein the etching substance is formulated to etch one or more of a metallic oxide, a ceramic, a metallic alloy, or a polymeric material.

6. The apparatus of claim 1, wherein the antenna has an interior surface, the interior surface of the antenna being larger than the surface area of at least a portion of the substrate.

7. The apparatus of claim 1, wherein the substrate includes a polyimide webbing.

8. The apparatus of claim 1, wherein the transfer mechanism includes a first member and a second member, the first member being configured to transfer the at least a portion of the substrate to the second member.

9. The apparatus of claim 7, wherein the first member is a feeder roll configured to retain the at least a portion of the substrate prior to the at least a portion of the substrate being moved through the process zone, the second member is a take up roll configured to retain the at least a portion of the substrate after the at least a portion of the substrate is transferred through the process zone.

10. The apparatus of claim 1, further comprising a heating element configured to heat at least one of the substrate and the etching substance.

11. The apparatus of claim 1, wherein the antenna is a radio frequency antenna.

12. The apparatus of claim 1, wherein the antenna has a first portion, a second portion, a third portion, a fourth portion, and a fifth portion, the first portion being oriented generally parallel to the substrate and adjacent to the second, third, fourth, and fifth portions, the second portion being oriented orthogonal to the substrate and adjacent to the first, third, and fourth portions, the third portion being oriented orthogonal to the substrate and adjacent to the first, second, and fifth portions, the fourth portion being oriented orthogonal to the substrate and adjacent to the first, second, and fifth portions, the fifth portion being oriented orthogonal to the substrate and adjacent to the first, fourth, and third portions.

13. The apparatus of claim 1, wherein the antenna and the at least a portion of the substrate collectively define a substantially enclosed area, the antenna having an interior surface area, the interior surface area of the antenna being larger than a surface area of a portion of the substrate adjacent to the interior surface area of the antenna.

14. The apparatus of claim 1, wherein the antenna has a dome-like shape, wherein at least a portion of the interior surface area of the dome-like shape and the at least a portion of the substrate collectively define a substantially enclosed area.

15. The apparatus of claim 1, further comprising a grid disposed between the antenna and the substrate, the grid being configured to attract the activated etching substance and cause anisotropic etching.

16. A processing method for etching a substrate including at least a first etchable material in a desired configuration using an etching substance formulated, when activated, to etch the etchable material and contained within a chamber and comprising the steps of: placing the substrate on a transfer system configured to transfer at least a portion of the substrate through a process zone, the process zone being located in the chamber;transferring the substrate from a first position to a second position, the first position having a first portion of the substrate disposed inside the process zone and a second portion of the substrate disposed outside the process zone, the second position having the first portion of the substrate disposed outside the process zone and the second portion disposed inside the process zone; andapplying an radio frequency energy or a voltage potential to an antenna to activate the etching substance.

17. An apparatus for etching a substrate including an etchable material using an etching substance formulated to etch the etchable material when activated, comprising: a chamber configured to contain an etching substance and the substrate;an antenna, disposed within the chamber, the antenna configured to activate the etching substance; anda grid, disposed within the chamber between the antenna and the substrate, the grid being configured to attract the etching substance.

18. The apparatus of claim 17, further comprising: a transfer mechanism, the transfer mechanism being configured to move the substrate from a first position to a second position, the first position having the first portion disposed outside the process zone and the second portion disposed within the process zone, the second position having the first portion disposed within the process zone and the second portion disposed outside the process zone.

19. The apparatus of claim 17, wherein the grid is disposed between about 0.125 inches to 1 inch away from a surface of the substrate.

20. The apparatus of claim 17, wherein the grid includes a plurality of wires.

21. The apparatus of claim 20, wherein the plurality wires include steel.

22. The apparatus of claim 17, wherein the grid is configured to accumulate a voltage potential from about 0 to −500 volts.

23. The apparatus of claim 17, wherein the grid is removable from the chamber.

24. The apparatus of claim 17, wherein the grid is configured to cause anisotropic etching of the substrate.

25. An apparatus for etching a substrate including material that can be etched by an etching substance, comprising: a chamber configured to contain the etching substance and the substrate;an antenna disposed within the chamber, the antenna being configured to collectively, with at least a portion of the substrate, define a substantially enclosed area, the antenna has an interior surface, the interior surface of the antenna being larger than the surface area of the at least a portion of the substrate.

26. The apparatus of claim 25, further comprising: a transfer mechanism, the transfer mechanism being configured to move the substrate from a first position to a second position, the first position having a first portion of the substrate disposed within the process zone and a second portion of the substrate disposed outside the process zone, the second position having the first portion of the substrate disposed outside the process zone and the second portion of the substrate disposed within the process zone.

27. The apparatus of claim 25, wherein the antenna has a first portion, a second portion, a third portion, a fourth portion, and a fifth portion, the first portion being oriented generally parallel to the substrate and adjacent to the second, third, fourth, and fifth portions, the second portion being oriented orthogonal to the substrate and adjacent to the first, third, and fourth portions, the third portion being oriented orthogonal to the substrate and adjacent to the first, second, and fifth portions, the fourth portion being oriented orthogonal to the substrate and adjacent to the first, second, and fifth portions, the fifth portion being oriented orthogonal to the substrate and adjacent to the first, fourth, and third portions.

28. The apparatus of claim 25, the antenna being configured to activate the etching substance.

29. The apparatus of claim 25, further comprising: a grid disposed between the antenna and the substrate, the grid being configured to move the activated etching substance to the substrate.

30. The apparatus of claim 25, wherein the antenna includes a plurality of layers.

31. The apparatus of claim 25, wherein the antenna is disposed between about 0.25 inches and 0.125 inches away from the substrate.

32. The apparatus of claim 25, wherein the substrate is grounded.