This application claims the priority to French patent application number 15/60912, filed Nov. 13, 2015, which is hereby incorporated by reference in its entirety to the maximum extent allowable by law.
The present disclosure relates to optical filters, and more particularly to an optical filter using plasmonic resonators of MIM (metal-oxide-metal) type to selectively transmit or absorb an optical radiation.
Optical filters with plasmonic resonators, or plasmonic filters, are used to selectively transmit or absorb an optical radiation having a selected wavelength. A plasmonic filter may for example be used in a bolometer to selectively absorb an infrared radiation.
The quality of the filtering is all the greater as the shape of the slab, which may be of submicron size, is accurately formed. Now, slabs of small size obtained by the available manufacturing techniques in reality have rounded angles and do not exactly have the desired dimensions. The quality of the obtained filtering is then altered.
Thus, an embodiment provides a plasmonic optical filter comprising a periodic repetition of metal slabs above a metal surface; dielectric spacers arranged between the slabs and the metal surface so that there exists an empty space between each slab and the metal surface; and an opening between each of said empty spaces and the outside.
According to an embodiment, the metal slabs are arranged in an array and have the shape of squares with sides having a dimension in the range from 0.3 μm to 3 μm.
According to an embodiment, the metal slabs have a thickness in the range from 30 nm to 100 nm and the dielectric spacers have a thickness in the range from 30 nm to 300 nm.
According to an embodiment, the dielectric spacers form a grid delimiting said empty spaces, the entire periphery of each slab being arranged on the grid, and said opening being formed in each slab.
According to an embodiment, the openings have diameters in the range from 10 to 40 nm.
According to an embodiment, the grid delimits square empty spaces.
According to an embodiment, the grid delimits circular empty spaces.
According to an embodiment, the dielectric spacers are pads arranged in an array, each slab having four corners arranged on four neighboring pads, the openings being spaces between the slabs.
According to an embodiment, the dielectric spacers are bar-shaped, each slab having two edges arranged on two neighboring bars, the openings being spaces between the slabs.
An embodiment provides a method of forming a plasmonic optical filter on a metal surface, comprising the steps of:
a) depositing a dielectric layer on the metal surface;
b) forming, on the dielectric layer, a periodic repetition of separate metal slabs, each of which is provided with an opening; and
c) removing a portion of the dielectric layer by selective isotropic etching from the openings, to form empty spaces under each metal slab.
According to an embodiment, the method comprises, between step b) and step c), a step of masking the portions of the dielectric layer accessible between the metal slabs.
According to an embodiment, the dielectric layer is made of silicon oxide.
An embodiment provides a method of forming a plasmonic optical filter on a metal surface, comprising the steps of:
a) forming a periodic repetition of dielectric spacers on the metal surface;
b) filling with a sacrificial material the entire volume between the spacers;
c) forming a periodic repetition of separate metal slabs, each slab mostly resting on the sacrificial material; and
d) selectively etching the sacrificial material from the openings between the separate metal slabs.
According to an embodiment, the dielectric spacers are made of silicon oxide, the sacrificial material is silicon nitride, and the selective etching is a RIE etching in a SF6 and oxygen medium.
According to an embodiment, the dielectric spacers are made of silicon, the sacrificial material is silicon oxide, and the selective etching is a RIE etching under a CF4 and oxygen plasma.
According to an embodiment, the dielectric spacers are made of silicon oxide, the sacrificial material is silicon, and the selective etching is a RIE etching under a BCl3, Cl2 and nitrogen plasma or a dry etching under xenon difluoride (XeF2).
According to an embodiment, the dielectric spacers are made of aluminum oxide, the sacrificial material is silicon oxide, and the selective etching is a chemical vapor etching with hydrofluoric acid.
An embodiment provides a bolometer comprising a filter such as hereabove.
The foregoing and other features and advantages will be discussed in detail in the following non-limiting description of dedicated embodiments in connection with the accompanying drawings.
The same elements have been designated with the same reference numerals in the different drawings and, further, the various drawings are not to scale. For clarity, only those elements which are useful to the understanding of the described embodiments have been shown and are detailed.
In the following description, when reference is made to terms qualifying a relative position, such as term “top”, “bottom”, “upper”, “on”, “under”, reference is made to the orientation of the concerned element in the drawings. Unless otherwise specified, expression “in the order of” means to within 10%, preferably to within 5%.
At the step illustrated in
At the step illustrated in
At the step illustrated in
As previously indicated, dimension d of the slab sides is equal to λ/2n, λ designating the wavelength, and n designating the refraction index of the material located under each slab. Now, n is now equal to 1 under the most part of each slab. Thereby, for a given filtering wavelength, slabs 17 may be up to n times larger than in the case where these slabs rest on a dielectric material. n is for example close to 1.45 for silicon oxide and close to 2 for silicon nitride. For larger slabs, the shapes are formed with a better accuracy, and filter 19 of
As an example, metal layer 12 and metal slabs 17 are made of aluminum. Pads 14 may be made of silicon oxide and the sacrificial material may be silicon nitride, the selective etching of the sacrificial layer can then be performed by reactive ion etching or RIE in a SF6 and oxygen medium. In a variation, pads 14 are made of polysilicon, the sacrificial material is silicon oxide, and the selective etching is a RIE etching under a CF4 and oxygen plasma. In another variation, pads 14 are made of silicon oxide, the sacrificial material is polysilicon, and the selective etching is a RIE etching under a BCl3, Cl2 and nitrogen plasma or a dry etching under xenon difluoride (XeF2). In another variation, the pads are made of aluminum oxide, the sacrificial material is silicon oxide, and the selective etching is a chemical vapor etching with hydrofluoric acid. More generally, any combination of two materials to which a selective etch method can be adapted may be selected for the pads and the sacrificial material.
As an example, dimension d of the sides of the slabs has a length in the range from 0.2 μm to 3 μm, respectively corresponding to a wavelength in the range from 0.4 to 6 μm.
The slab thickness may be in the range from 20 to 100 nm. The thickness or height of the pads may be in the range from 30 to 300 nm.
Each slab 17 of filter 30 is held by two sides, which provides a better mechanical resistance than that of the slabs of filter 19 of
It should be noted that the empty spaces located under slabs 17 of filter 30, as well as under slabs 17 of filter 19 of
The step illustrated in
The step illustrated in
The step illustrated in
Each slab 42 is provided with an opening 44, for example located at the center of the slab.
Each empty space 38 communicates with the outside through opening 44 in the slab. As previously indicated, the communication openings enable the filter to mechanically withstand pressure variations. Further, each slab is now held along its entire periphery. This feature advantageously provides mechanical filter 46 with a remarkably increased mechanical resistance. Further, this embodiment keeps the insensitivity to biasing, since the structure keeps the 90° rotational symmetry (if the x and y periods are equal).
The openings may have any shape. As an example, openings 44 are circular, with diameters in the range from 10 to 40 nm. The inventors have observed that the presence of such openings 44 has a negligible effect on the optical properties of the filter.
This is shown in
Filter 46 has an optical quality identical to that of filters 19 and 30 of
Optical filter 50 is formed by forming, on a uniform layer of a dielectric material 52 covering metal surface 13 of a support 10, a regular paving of separate square metal slabs 42. Each slab is provided with a central opening 44. Dielectric material 52 is then selectively etched, isotropically, from openings 44 to form an empty space 54 under the most part of each of slabs 42. The etching may be performed after a masking intended to protect the portions of dielectric material 52 accessible between the slabs. The obtained filter 50 corresponds to filter 46 of
Filter 50 has the advantage that it can be formed in a very simple way.
Specific embodiments have been described. Various alterations, modifications, and improvements will occur to those skilled in the art. In particular, metal surface 13 of the described embodiments is a continuous surface on which the formed plasmonic filters are reflection filters, that is, filters absorbing an optical radiation having a selected wavelength and reflecting the optical radiations of other wavelengths. Variations of plasmonic filters transmitting a radiation of selected wavelength are possible, where the metal support comprises separate metal slabs formed on a transparent support.
Further, although the slabs of the above-described embodiments are square-shaped, the slabs may have other shapes capable of forming plasmonic resonators. As an example, the slabs may be cross-shaped or round. As a variation, the slabs may have rectangular shapes to favor the filtering of radiations having a selected biasing.
Further, although in the described embodiments, the slabs are arranged in an array, the slabs may be periodically repeated according to other configurations. For example, the slabs may be arranged in a triangular network.
Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the spirit and the scope of the present invention. Accordingly, the foregoing description is by way of example only and is not intended to be limiting. The present invention is limited only as defined in the following claims and the equivalents thereto.
Number | Date | Country | Kind |
---|---|---|---|
15/60912 | Nov 2015 | FR | national |