POLARIZATION ENHANCEMENT STRUCTURE FOR ENLARGING MEMORY WINDOW

Abstract

The present disclosure relates a ferroelectric field-effect transistor (FeFET) device. The FeFET device includes a ferroelectric structure having a first side and a second side. A gate structure is disposed along the first side of the ferroelectric structure, and an oxide semiconductor is disposed along the second side of the ferroelectric structure. The oxide semiconductor has a first semiconductor type. A source region and a drain region are disposed on the oxide semiconductor. The gate structure is laterally between the source region and the drain region. A polarization enhancement structure is arranged on the oxide semiconductor between the source region and the drain region. The polarization enhancement structure includes a semiconductor material or an oxide semiconductor material having a second semiconductor type that is different than the first semiconductor type.

Description

Claims

1. A ferroelectric field-effect transistor (FeFET) device, comprising: a ferroelectric structure having a first side and a second side;a gate structure disposed along the first side of the ferroelectric structure;an oxide semiconductor disposed along the second side of the ferroelectric structure and having a first semiconductor type;a source region and a drain region disposed on the oxide semiconductor, wherein the gate structure is laterally between the source region and the drain region; anda polarization enhancement structure arranged on the oxide semiconductor between the source region and the drain region and comprising a semiconductor material or an oxide semiconductor material having a second semiconductor type that is different than the first semiconductor type.

2. The FeFET device of claim 1, further comprising: a dielectric layer disposed on the polarization enhancement structure, wherein the source region and the drain region extend through the dielectric layer and the polarization enhancement structure.

3. The FeFET device of claim 1, wherein the first semiconductor type is an n-type semiconductor and the second semiconductor type is a p-type semiconductor.

4. The FeFET device of claim 1, wherein the polarization enhancement structure is arranged along opposing sides of the source region and along opposing sides of the drain region.

5. The FeFET device of claim 1, wherein the oxide semiconductor comprises one or more of indium gallium zinc oxide, indium gallium zinc tin oxide, indium tungsten oxide, indium tungsten zinc oxide, indium zinc oxide, and zinc oxide.

6. The FeFET device of claim 1, wherein the polarization enhancement structure has an uppermost surface that continuously extends between a first sidewall of the source region and a second sidewall of the drain region.

7. The FeFET device of claim 1, wherein the source region is coupled to a source-line, the drain region is coupled to a bit-line, and the gate structure is coupled to a word-line.

8. The FeFET device of claim 1, further comprising: a dielectric layer disposed on an upper surface of the gate structure, wherein the upper surface of the gate structure continuously extends from directly below the ferroelectric structure to laterally outside of the ferroelectric structure; andwherein a gate contact extends through the dielectric layer to contact the gate structure.

9. The FeFET device of claim 1, wherein the gate structure is disposed along a first side of a substrate; andwherein the gate structure is vertically disposed between the first side of the substrate and the ferroelectric structure.

10. The FeFET device of claim 9, further comprising: a transistor device arranged along the first side of the substrate.

11. The FeFET device of claim 1, wherein the polarization enhancement structure continuously extends for a first width along a cross-sectional view extending through the source region and the drain region; andwherein the oxide semiconductor continuously extends over a second width as viewed along the cross-sectional view, the second width being larger than the first width.

12. An integrated chip, comprising: a gate structure arranged over a substrate;a ferroelectric structure arranged on the gate structure;an oxide semiconductor separated from the gate structure by the ferroelectric structure and having a first semiconductor type;a source region disposed on the oxide semiconductor; anda polarization enhancement structure arranged on the oxide semiconductor and having a second semiconductor type that is different than the first semiconductor type.

13. The integrated chip of claim 12, wherein the source region is a metal.

14. The integrated chip of claim 12, further comprising: a drain region disposed on the oxide semiconductor, wherein an uppermost surface of the polarization enhancement structure continuously extends between sidewalls of the source region and the drain region.

15. The integrated chip of claim 12, wherein the gate structure comprises a material having a Fermi level that is between a Fermi level of the oxide semiconductor and a Fermi level of the polarization enhancement structure.

16. The integrated chip of claim 12, wherein the oxide semiconductor and the polarization enhancement structure respectively have a doping concentration of less than approximately 1×1018 at/cm-3.

17. An integrated chip, comprising: a gate structure arranged over a substrate;a ferroelectric structure arranged on the gate structure;an oxide semiconductor separated from the gate structure by the ferroelectric structure;a source and a drain disposed on the oxide semiconductor; anda polarization enhancement structure comprising a semiconductor material arranged on the oxide semiconductor.

18. The integrated chip of claim 17, wherein the polarization enhancement structure physically contacts the oxide semiconductor laterally between the source and the drain.

19. The integrated chip of claim 17, further comprising: a dielectric disposed over the polarization enhancement structure, wherein the source and the drain vertically extend through the dielectric.

20. The integrated chip of claim 17, wherein the polarization enhancement structure laterally surrounds the source and the drain.