with a ferroelectric gate insulator

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CPC
H01L29/6684

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/6684with a ferroelectric gate insulator

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of writing to or erasing multi-bit memory storage device
- Patent number 12,355,026
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
3D ferroelectric memory
- Patent number 12,302,583
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chih Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded ferroelectric memory in high-k first technology
- Patent number 12,302,584
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide interlayer structure for NFET and PFET
- Patent number 12,300,739
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Min Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 12,294,029
- Issue date May 6, 2025
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, integrated circuit, and manufacturing method of transistor
- Patent number 12,288,820
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor dies including low and high workfunction semiconducto...
- Patent number 12,289,891
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective internal gate structure for ferroelectric semiconductor d...
- Patent number 12,278,287
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative capacitance transistor with a diffusion blocking layer
- Patent number 12,272,751
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Hsing Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,274,070
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated transistors having gate material passing through a pilla...
- Patent number 12,261,223
- Issue date Mar 25, 2025
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device
- Patent number 12,262,542
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including ferroelectric layer and insulation l...
- Patent number 12,261,219
- Issue date Mar 25, 2025
- SK hynix Inc.
- Won Tae Koo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor memory structure
- Patent number 12,256,551
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,243,932
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor, ferroelectric field effect transistor, and...
- Patent number 12,237,112
- Issue date Feb 25, 2025
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency switch
- Patent number 12,237,863
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET gate engineerinng with dipole films
- Patent number 12,230,688
- Issue date Feb 18, 2025
- Applied Materials, Inc.
- Yong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ferroelectric random-access memory (FeRAM)
- Patent number 12,232,327
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Yung-Tin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked ferroelectric structure
- Patent number 12,232,329
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array contact structures
- Patent number 12,225,731
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Domain switching devices and methods of manufacturing the same
- Patent number 12,224,346
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric devices including a single crystalline ferroelectric...
- Patent number 12,219,776
- Issue date Feb 4, 2025
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,211,836
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked ferroelectric structure
- Patent number 12,207,474
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method for manufacturing the same
- Patent number 12,206,014
- Issue date Jan 21, 2025
- Nippon Telegraph and Telephone Corporation
- Takuya Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor devices and structures with metal layers
- Patent number 12,199,093
- Issue date Jan 14, 2025
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device
- Patent number 12,200,940
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device structure and manufacturing method thereof
- Patent number 12,200,943
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Ting Hsieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072107
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- SUNGIL PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND FORMATION METHOD THEREOF
- Publication number 20250072030
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Rui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20250063793
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
TERNARY CONTENT-ADDRESSABLE MEMORY CELLS AND METHODS FOR FORMING TH...
- Publication number 20250054546
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20250054523
- Publication date Feb 13, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Takeshi AOKI
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL
- Publication number 20250048681
- Publication date Feb 6, 2025
- Kennametal Inc.
- Tim Guter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION ENHANCEMENT STRUCTURE FOR ENLARGING MEMORY WINDOW
- Publication number 20250048682
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH
- Publication number 20250048647
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION
- Publication number 20250031380
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
FORKSHEET SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250031400
- Publication date Jan 23, 2025
- TOKYO ELECTRON LIMITED
- Mark I. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250022922
- Publication date Jan 16, 2025
- Mitsubishi Electric Corporation
- Kohei NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...
- Publication number 20250015184
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Hagyoul BAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A METAL OXIDE INTERFACE LAYER AND ME...
- Publication number 20250014945
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250016977
- Publication date Jan 9, 2025
- SK HYNIX INC.
- Jun Sik KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY DEVICE
- Publication number 20250008738
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE TOPOLOGICAL QUANTUM FIELD-EFFECT TRANSISTOR
- Publication number 20250006821
- Publication date Jan 2, 2025
- MONASH UNIVERSITY
- Michael Sears Fuhrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240414925
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seunghee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...
- Publication number 20240407174
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER
- Publication number 20240397728
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-FERROELECTRIC MEMORY DEVICE
- Publication number 20240397725
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun-Chieh Lu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME
- Publication number 20240397726
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Ilho Myeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20240397729
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM
- Publication number 20240389341
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240389349
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Ting Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240389344
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...
- Publication number 20240387685
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer, Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240387710
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387728
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION WITH IMPROVED FERROELECTRIC RESPONSE...
- Publication number 20240389340
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS

with a ferroelectric gate insulator

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of writing to or erasing multi-bit memory storage device

3D ferroelectric memory

Embedded ferroelectric memory in high-k first technology

Metal oxide interlayer structure for NFET and PFET

Doped polar layers and semiconductor device incorporating same

Transistor, integrated circuit, and manufacturing method of transistor

Semiconductor dies including low and high workfunction semiconducto...

Selective internal gate structure for ferroelectric semiconductor d...

Negative capacitance transistor with a diffusion blocking layer

Semiconductor device and manufacturing method thereof

Integrated transistors having gate material passing through a pilla...

Ferroelectric memory device

Semiconductor device including ferroelectric layer and insulation l...

Method for forming semiconductor memory structure

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Ferroelectric capacitor, ferroelectric field effect transistor, and...

Radio frequency switch

MOSFET gate engineerinng with dipole films

Three-dimensional ferroelectric random-access memory (FeRAM)

Stacked ferroelectric structure

Memory array contact structures

Domain switching devices and methods of manufacturing the same

Three-dimensional semiconductor device and method of fabricating th...

Ferroelectric devices including a single crystalline ferroelectric...

Semiconductor device and manufacturing method thereof

Stacked ferroelectric structure

Field-effect transistor and method for manufacturing the same

3D semiconductor devices and structures with metal layers

Three-dimensional memory device

Memory device structure and manufacturing method thereof

Patents Applicationslast 30 patents

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

DEVICE AND FORMATION METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

TERNARY CONTENT-ADDRESSABLE MEMORY CELLS AND METHODS FOR FORMING TH...

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL

POLARIZATION ENHANCEMENT STRUCTURE FOR ENLARGING MEMORY WINDOW

FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH

3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION

FORKSHEET SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...

SEMICONDUCTOR DEVICE INCLUDING A METAL OXIDE INTERFACE LAYER AND ME...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD OF FORMING MEMORY DEVICE

NEGATIVE CAPACITANCE TOPOLOGICAL QUANTUM FIELD-EFFECT TRANSISTOR

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...

FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER

ANTI-FERROELECTRIC MEMORY DEVICE

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME

MEMORY DEVICE AND FORMING METHOD THEREOF

COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM

MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE AND METHOD OF FORMING THE SAME

CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD

FERROELECTRIC TUNNEL JUNCTION WITH IMPROVED FERROELECTRIC RESPONSE...