This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2016-021315, filed on Feb. 5, 2016 and Japanese Patent Application No. 2016-254137, filed on Dec. 27, 2016; the entire contents of which are incorporated herein by reference.
Field of the Invention
The present invention relates to a polishing apparatus.
Background Art
Conventionally, a polishing apparatus that uses a polishing pad, which is rotationally driven, as disclosed in WO 2013/038573, for example, has been known as a polishing apparatus that polishes a surface of a wafer made of a semiconductor material, and the like. In general, the polishing pad is provided at a distal end of a rotation shaft. The polishing pad including a rotation mechanism and a rotation shaft is supported by a head via an elastic mechanism. The head is supported by an apparatus main body via a driving mechanism.
It is possible to employ a method of combining position control and load control, as disclosed in JP S59-219152 A, for example, as a method of controlling a driving mechanism. This control method is a method in which the driving mechanism is controlled based on a position (coordinate) of a polishing pad (the position control) until achieving a target load when polishing is performed by the polishing pad in contact with a wafer, and the driving mechanism is controlled based on pressure caused on a contact surface between the polishing pad and the wafer (the load control) after achieving the target load. A position (Z coordinate) of a head when achieving the target load at the time of the polishing is determined based on the area of a polishing surface of the polishing pad and a spring constant value of an elastic mechanism.
It is possible to measure a load applied to the polishing pad using a load cell provided above the rotation shaft of the polishing pad, for example. The measurement procedure is as follows. That is, the head is lowered (moved in a direction of approaching the wafer) along a Z coordinate axis (vertical axis), and the polishing surface of the polishing pad is pushed against the wafer. Along with this, the elastic mechanism (coil spring) is deformed, and the polishing pad and the rotation shaft are relatively moved upward with respect to the head. Accordingly, a strain gauge inside the load cell is deformed as an upper end portion of the rotation shaft is pushed to the load cell, and a force of the upper end portion of the rotation shaft pushing the strain gauge is measured. Further, a Z coordinate value of the head is adjusted such that the force to be measured by the load cell becomes the target load.
In the polishing apparatus described above, the polishing pad is rapidly moved upward (pushed up), and a measurement value of the load cell rapidly increases when a polishing body passes through a location where a tiny protrusion and a foreign substance is present at the time of performing the load control. In general, it is difficult to perform the highly accurate load control in accordance with such a rapid change of the load. In addition, a measurable load range is relatively narrow in the highly accurate load cell, and thus, there is a risk that it is difficult to perform proper measurement of the load.
The inventors of the present application have found out that it is possible to expand the measurable load range and to perform polishing processing at high accuracy even when a rapid change of the load occurs by performing load control based on a position sensor (for example, a linear scale) and on a spring constant value of an elastic mechanism, as a result of diligently repeating studies.
The invention has been made based on the above-described findings. That is, an object of the invention is to provide a polishing apparatus capable of expanding a detection range of a load applied to a polishing body and maintaining highly accurate polishing processing even when the polishing body passes through a location where a tiny protrusion or a foreign substance is present.
An embodiment of the invention is a polishing apparatus including: a holding section that holds a material to be polished; a polishing body that polishes the material to be polished held by the holding section; a head that supports the polishing body via an elastic mechanism; a driving mechanism that causes the head to be relatively moved in a direction in which a separation distance from the material to be polished is changed, with respect to the material to be polished; and a control unit that is connected to the driving mechanism and controls the driving mechanism, wherein the elastic mechanism provides an elastic force in a direction of canceling a load of the head.
According to the invention, the load applied to the polishing body is measured without using a load cell or the like, and thus, it is possible to provide the polishing apparatus capable of expanding the detection range of the load and maintaining the highly accurate polishing processing even when the polishing body passes through the location where the tiny protrusion or the foreign substance is present.
The polishing apparatus may include a position sensor which is connected to the control unit and which measures a position of the polishing body with respect to the head. In this case, it is possible to accurately measure a relative position of the polishing body with respect to the head.
The position sensor may be a linear scale. In this case, it is easy to accurately measure a relative position of the polishing body with respect to the head.
The control unit may be configured to calculate a load applied to the polishing body based on a measurement value of the position sensor and a spring constant value of the elastic mechanism, and control the load. In this case, it is possible to accurately control the position of the polishing body.
According to the invention, the load applied to the polishing body is not directly measured by the load cell or the like, and thus, it is possible to provide the polishing apparatus capable of expanding the detection range of the load and maintaining the highly accurate polishing processing even when the polishing body passes through the location where the tiny protrusion or the foreign substance is present.
Hereinafter, an embodiment of the invention will be described in detail with reference to the accompanying drawings.
Among them, the table (holding section) 60 is configured to hold the discoid wafer Wa serving as the material to be polished. The table 60 is supported by a cuboid support block 61 which is arranged on the bed 70.
In addition, the polishing body 10 polishes the wafer Wa held by the table 60. As illustrated in
The apparatus main body 20 according to this embodiment is configured to support the head 30 via the driving mechanism 24 that causes the head 30 to be relatively moved with respect to the wafer Wa. As illustrated in
In addition, it is configured such that the column 21 according to this embodiment is moved on the base 23 in a length direction of the arm 22 (an X coordinate direction of
In addition, the bed 70 is configured to support the support block 61 of the table 60 and the apparatus main body as illustrated in
Next, a configuration of the head 30 will be further described.
As illustrated in
In addition, the elastic mechanism 32 according to this embodiment is configured of one pressing spring 32a, which presses the polishing body 10 downward together with the polishing body support member 31, and two balancing springs 32b and 32c to support the own weight of the polishing body support member 31 as illustrated in
Further, the polishing apparatus 100 includes a linear scale 34 as a position sensor that measures a coordinate (W coordinate in
Next, an effect of the polishing apparatus 100 according to this embodiment will be described.
First, the table 60 is positioned along the two parallel grooves carved on the bed 70 such that the rotation center of the table 60 and the shaft center of the spindle 11 of the polishing body 10 match each other in the Y-axis direction, prior to a polishing process. The wafer Wa as the material to be polished is mounted to the table 60 such that a surface to be polished faces upward. Further, when a user activates the polishing apparatus 100, the column 21 is moved on the base 23 until the rotation center of the table 60 and the shaft center of the spindle 11 match each other in the X-axis direction of
Further, each of the spindle 11 of the polishing body 10 and the driving mechanism of the table 60 is activated based on a command of the user, and the polishing body 10 and the table 60 are rotated at each desired speed. That is, the polishing pad 12 and the wafer Wa are rotated at each desired speed. In this state, the head 30 is moved downward together with the arm 22 by the driving mechanism provided in the column 21, and the polishing pad 12 is pushed against the wafer Wa. In this embodiment, a polishing liquid is supplied to the surface of the wafer Wa to be polished before the polishing pad 12 is pushed against the wafer Wa in order to perform the smooth polishing process.
In the polishing apparatus 100 according to this embodiment, the movement of the head 30 until the polishing pad 12 is pushed against the wafer Wa is controlled as the position control, that is, based on the position (Z coordinate) of the head 30. Further, when the target load at the time of polishing is achieved after the polishing pad 12 is pushed against the wafer Wa, it is switched to the load control based on the position (W coordinate) of the polishing body 10 with respect to the head 30 detected by the linear scale 34. In the load control according to this embodiment, the position (W coordinate) of the polishing body support member 31 is controlled on consideration of the spring constant value of the elastic mechanism 32 such that the pressure (surface pressure) applied to the contact surface between the wafer Wa and the polishing pad 12 becomes constant.
As apparent from the above description, the load control according to this embodiment is not performed by directly measuring the load applied to the polishing body 10, but is performed based on the position (W coordinate) of the polishing body 10 with respect to the head 30 that is measured by the linear scale 34. To be specific, the load applied to the polishing body 10 is evaluated based on this W coordinate and the spring constant value of the elastic mechanism 32, and the position (Z coordinate) of the head 30 is controlled such that this load becomes a predetermined value.
When the load control is started, the pressure evaluation unit 54 monitors the W coordinate of the polishing body support member 31 in real time. The polishing pad 12 gradually approaches the wafer Wa from the upper side of the wafer Wa, and at the same time, is moved from a radially outward side of the wafer Wa to a radially inward side thereof. Then, a part of the polishing pad 12 is pushed against the wafer Wa, and the polishing of the wafer Wa is started. The polishing pad 12 is gradually moved to the radially inward side of the wafer Wa. Along with this, the contact area between a polishing surface of the polishing pad 12 and the wafer Wa gradually increases, and the contact area becomes constant eventually as the entire polishing surface is brought into contact with the wafer Wa. In this embodiment, the load applied to the polishing body 10 gradually increases, and then, becomes constant since the position (Z coordinate) of the head 30 is controlled such that the pressure (surface pressure) applied to the contact surface between the polishing pad 12 and the wafer Wa becomes constant.
A thickness of the wafer Wa is decreased along with the process of polishing the wafer Wa, and the head 30 is moved downward together with the arm 22 by the driving mechanism 24 provided in the column 21 when the load applied to the polishing body 10 decreases. The polishing body 10 is strongly pushed against the wafer Wa due to such movement, and thus, the load applied to the polishing body 10 increases, and the pressing spring 32a is compressed. Further, the movement is stopped when the linear scale 34 detects a recovery of the W coordinate of the polishing body support member 31 registered, in advance, in the polishing apparatus 100.
At the time of polishing the wafer Wa, the polishing body 10 is linearly moved along the X coordinate direction from one peripheral edge portion to the other peripheral edge portion of the wafer Wa as the column 21 is moved on the base 23. When the polishing body 10 passes through a location where a tiny protrusion or a foreign substance is present on the surface of the wafer Wa in the course of polishing, the polishing body 10 is rapidly moved upward (pushed up).
However, the load is indirectly measured using the linear scale 34 in this embodiment, the measurable load range is wider than the case of directly measuring a load using, for example, a load cell.
Further, when desired polishing processing has been achieved, the supply of the polishing liquid is stopped, and the head 30 is moved upward together with the arm 22 by the driving mechanism 24. Further, each rotation of the polishing body 10 and the table 60 is stopped based on the user's command, and the wafer Wa is removed from the table 60. At this time, the column 21 is moved on the base 23 in the negative direction of the X coordinate of
According to the above-described embodiment, the load applied to the polishing body 10 is measured without using a load cell or the like, and thus, it is possible to provide the polishing apparatus 100 capable of expanding the detection range of the load and maintaining the highly accurate polishing processing even when the polishing body 10 passes through the location where the tiny protrusion or the foreign substance is present.
Since the linear scale 34 is employed as the position sensor in this embodiment, the position sensor, it is possible to easily and accurately measure the relative position of the polishing body 10 with respect to the head 30.
Although the polishing body 10 is rotatably supported by the polishing body support member 31 via the spindle 11 in this embodiment, the polishing body 10 is not necessarily configured to be rotatably supported.
In addition, the position control is switched to the load control when the target load at the time of polishing is achieved in this embodiment, but the switching to the load control may be performed before achieving the target load. In this case, it is possible to avoid an overshoot of the load with respect to the target load caused due to a repulsive force of the elastic mechanism 32.
Number | Date | Country | Kind |
---|---|---|---|
2016-021315 | Feb 2016 | JP | national |
2016-254137 | Dec 2016 | JP | national |
Number | Name | Date | Kind |
---|---|---|---|
5908530 | Hoshizaki | Jun 1999 | A |
8250720 | Tomioka | Aug 2012 | B2 |
20160256976 | Shinozaki | Sep 2016 | A1 |
20160368115 | Yasuda | Dec 2016 | A1 |
20170047237 | Kobata | Feb 2017 | A1 |
20170225287 | Murofushi | Aug 2017 | A1 |
Number | Date | Country |
---|---|---|
S59-219152 | Dec 1984 | JP |
05-057606 | Mar 1993 | JP |
05-57606 | Mar 1993 | JP |
2003-094328 | Apr 2003 | JP |
2003-326456 | Nov 2003 | JP |
2005-514780 | May 2005 | JP |
2007-181895 | Jul 2007 | JP |
2008-290173 | Dec 2008 | JP |
2013-233651 | Nov 2013 | JP |
2013233651 | Nov 2013 | JP |
2015-036165 | Feb 2015 | JP |
1999-0014896 | Feb 1999 | KR |
2001-0054603 | Jul 2001 | KR |
20010054603 | Jul 2001 | KR |
WO 2013038573 | Mar 2013 | WO |
Entry |
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Number | Date | Country | |
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20170225288 A1 | Aug 2017 | US |