Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles

Information

  • Patent Grant
  • 12023853
  • Patent Number
    12,023,853
  • Date Filed
    Monday, December 2, 2019
    4 years ago
  • Date Issued
    Tuesday, July 2, 2024
    4 months ago
Abstract
A polishing article manufacturing system includes a feed section and a take-up section, the take-up section comprising a supply roll having a polishing article disposed thereon for a chemical mechanical polishing process, a print section comprising a plurality of printheads disposed between the feed section and the take-up section, and a curing section disposed between the feed section and the take-up section, the curing section comprising one or both of a thermal curing device and an electromagnetic curing device.
Description
BACKGROUND
Field

Embodiments of the disclosure generally relate to an apparatus and method for chemical mechanical polishing of substrates or wafers, more particularly, to a polishing article manufacturing system and a method of manufacture of a polishing pad or polishing article for chemical mechanical polishing.


Description of the Related Art

In the fabrication of integrated circuits and other electronic devices on substrates, multiple layers of conductive, semiconductive, and dielectric materials are deposited on or removed from a feature side of a substrate. The sequential deposition and removal of these materials on the substrate may cause the feature side to become non-planar and require a planarization process, generally referred to as polishing, where previously deposited material is removed from the feature side of a substrate to form a generally even, planar or level surface. The process is useful in removing undesired surface topography and surface defects, such as rough surfaces, agglomerated materials, crystal lattice damage and scratches. The polishing process is also useful in forming features on a substrate by removing excess deposited material used to fill the features and to provide an even or level surface for subsequent deposition and processing.


One polishing process is known as Chemical Mechanical Polishing (CMP) where a substrate is placed in a substrate carrier assembly and controllably urged against a polishing media mounted to a moving platen assembly. The polishing media is typically a polishing article or polishing pad. The carrier assembly provides rotational movement relative to the moving platen and material removal is accomplished by chemical activity, mechanical abrasion, or a combination of chemical activity and mechanical abrasion between the feature side of the substrate and the polishing media.


However, the polishing process results in “glazing” or smoothening of a polishing surface of the polishing media, which reduces film removal rate. The surface of the polishing media is then “roughened” or conditioned to restore the polishing surface, which enhances local fluid transport and improves removal rate. Typically, conditioning is performed, in between polishing two wafers or in parallel with polishing the wafer, with a conditioning disk coated with abrasives such as micron sized industrial diamonds. The conditioning disk is rotated and pressed against the surface of the media and mechanically cuts the surface of the polishing media. However, while the rotation and/or down force applied to the conditioning disk is controlled, the cutting action is relatively indiscriminate, and the abrasives may not cut into the polishing surface evenly, which creates a differential in surface roughness across the polishing surface of the polishing media. As the cutting action of the conditioning disk is not readily controlled, the media life may be shortened. Further, the cutting action of the conditioning disk sometimes produces large asperities in the polishing surface, along with pad debris. While the asperities are beneficial in the polishing process, the asperities may break loose during polishing, which creates debris that, along with pad debris from cutting action, contributes to defects in the substrate.


Numerous other methods and systems that act on the polishing surface of the polishing article have been performed in an attempt to provide uniform conditioning of the polishing surface. However, control of the devices and systems (e.g., cutting action, down force, among other metrics) remain unsatisfactory and may be frustrated by the properties of the polishing media itself. For example, properties such hardness and/or density of the pad media may be non-uniform, which leads to more aggressive conditioning on some portions of the polishing surface relative to other portions.


Therefore, there is a need for a polishing article having properties that facilitate uniform polishing and conditioning.


SUMMARY

Embodiments of the disclosure generally relate to an apparatus and method for chemical mechanical polishing of substrates or wafers, more particularly, to a polishing article, a polishing article manufacturing system and a method of manufacture of a polishing article for chemical mechanical polishing.


In one embodiment, a polishing article manufacturing system includes a feed section and a take-up section, the take-up section comprising a supply roll having a polishing article disposed thereon for a chemical mechanical polishing process, a print section comprising a plurality of printheads disposed between the feed section and the take-up section, and a curing section disposed between the feed section and the take-up section, the curing section comprising one or both of a thermal curing device and an electromagnetic curing device.


In another embodiment, a polishing article is provided and includes a composite pad body. The composite pad body includes a plurality of polishing features forming a polishing surface, wherein the plurality of polishing features are formed from a first material, and one or more base features formed from a second material, wherein the one or more base features surround the plurality of polishing features to form a unitary body and the first material has a hardness greater than a hardness of the second material


In another embodiment, a replacement supply roll for a chemical mechanical polishing process is provided and includes a rod having a polishing article wound thereon. The polishing article includes a composite pad body, comprising a plurality of polishing features forming a polishing surface, wherein the plurality of polishing features are formed from a first material, and one or more base features formed from a second material, wherein the one or more base features surround the plurality of polishing features to form a unitary body and the first material has a hardness greater than a hardness of the second material.





BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.



FIG. 1 is a plan view of an exemplary chemical mechanical polishing module.



FIG. 2 is a sectional view of an exemplary processing station of the module of FIG. 1.



FIG. 3A is a schematic isometric view of one embodiment of a roll-to-roll pad manufacturing system.



FIG. 3B is a schematic side view of another embodiment of a roll-to-roll pad manufacturing system.



FIG. 4A is a schematic cross-sectional view of one embodiment of a 3D printing station that may be used in the pad manufacturing system of FIG. 3A or the pad manufacturing system of FIG. 3B.



FIG. 4B is a schematic cross-sectional view of one embodiment of a 3D printing station that may be used in the pad manufacturing system of FIG. 3A or the pad manufacturing system of FIG. 3B.



FIG. 5A is a top view of one embodiment of a polishing article assembly.



FIG. 5B is an enlarged isometric view of a portion of the polishing article assembly shown in FIG. 5A.



FIG. 6A is a top view of another embodiment of a polishing article assembly.



FIG. 6B is an enlarged isometric view of a portion of the polishing article assembly in FIG. 6A.



FIG. 7A is a top view of another embodiment of a polishing article assembly.



FIG. 7B is an enlarged isometric view of a portion of the polishing article assembly shown in FIG. 6A.



FIG. 8 is a schematic perspective sectional view of a polishing article according to another embodiment of the present disclosure.



FIG. 9 is a schematic perspective sectional view of another embodiment of a polishing article having an observation window.



FIG. 10 is a schematic sectional view of another embodiment of a polishing article including a backing layer.



FIG. 11 is a schematic sectional view of another embodiment of a polishing article having multiple zones.



FIG. 12 is a partial enlarged sectional view of the polishing article of FIG. 11.





To facilitate understanding, common words have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.


DETAILED DESCRIPTION


FIG. 1 depicts a plan view of a polishing module 106 which is a portion of a REFLEXION® Chemical Mechanical Polisher, manufactured by Applied Materials, Inc., located in Santa Clara, California Embodiments described herein may be used on this polishing system. However, one skilled in the art may advantageously adapt embodiments as taught and described herein to be employed on other chemical mechanical polishers produced by other manufacturers that utilize polishing material, and particularly polishing material in a roll format.


The polishing module 106 generally comprises a loading robot 104, a controller 108, a transfer station 136, a plurality of processing or polishing stations, such as platen assemblies 132, a base 140 and a carousel 134 that supports a plurality of polishing or carrier heads 152 (only one is shown in FIG. 1). Generally, the loading robot 104 is disposed proximate the polishing module 106 and a factory interface 102 (not shown) to facilitate the transfer of substrates 122 therebetween.


The transfer station 136 generally includes a transfer robot 146, an input buffer 142, an output buffer 144 and a load cup assembly 148. The input buffer station 142 receives a substrate 122 from the loading robot 104. The transfer robot 146 moves the substrate 122 from the input buffer station 142 and to the load cup assembly 148 where it may be transferred to the carrier head 152.


To facilitate control of the polishing module 106 as described above, the controller 108 comprises a central processing unit (CPU) 110, support circuits 146 and memory 112. The CPU 110 may be one of any form of computer processor that can be used in an industrial setting for controlling various polishers, drives, robots and sub-processors. The memory 112 is coupled to the CPU 110. The memory 112, or computer-readable medium, may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote. The support circuits 114 are coupled to the CPU 110 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry, subsystems, and the like.


Generally, the carousel 134 has a plurality of arms 150 that each support one of the carrier heads 152. Two of the arms 150 depicted in FIG. 1 are shown in phantom such that the transfer station and a planarizing or polishing article 123 disposed on one of the platen assemblies 132 may be seen. The carousel 134 is indexable such that the carrier heads 152 may be moved between the platen assemblies 132 and the transfer station 136.


Typically, a chemical mechanical polishing process is performed at each platen assembly 132 by moving the substrate 122 retained in the carrier head 152 relative to the polishing article 123 supported on the platen assembly 132. The polishing article 123 may have a smooth surface, a textured surface, a surface containing abrasives, or a combination thereof. Additionally, the polishing article 123 may be advanced across or releasably fixed to the polishing surface. Typically, the polishing article 123 is releasably fixed by vacuum, mechanical clamps or by other holding methods to the platen assembly 132.


Embodiments of the polishing article 123 may comprise a polymer material that is produced by a three-dimensional (3D) printing process according to embodiments described herein. The polishing article 123 may include nano-sized features (e.g., particles and/or discrete regions or domains within a polymer matrix having sizes of about 10 nanometers to about 200 nanometers). The polishing process may utilize a slurry containing abrasive particles delivered to the pad surface by fluid nozzles 154 to aid in polishing the substrate 122. The fluid nozzles 154 may rotate in the direction shown to a position clear of the platen assemblies 132 as shown, to a position over each of the platen assemblies 132.


3D printing as described herein includes, but is not limited to, polyjet deposition, inkjet printing, fused deposition modeling, binder jetting, powder bed fusion, selective laser sintering, stereolithography, vat photopolymerization digital light processing, sheet lamination, directed energy deposition, among other 3D deposition or printing processes.



FIG. 2 depicts a side view of the platen assembly 132 and an exemplary supply assembly 206 and a take up assembly 208, illustrating the position of the polishing article 123 across a platen 230. Generally, the supply assembly 206 includes the supply roll 254, an upper guide member 204 and a lower guide member 205 that are disposed between a side wall 218 of the platen assembly 132. The polishing article 123 may be wound about a rod 255, which may be a tubular member or a dowel. Generally, the take-up assembly 208 includes the take-up roll 252, an upper guide member 214 and a lower guide member 216 that are all disposed between the sidewalls 218. The take-up roll 252 generally contains a used portion of polishing article 123 and is configured so that it may easily be replaced with an empty take-up roll once take-up roll 252 is filled with used polishing article 123. The upper guide member 214 is positioned to lead the polishing article 123 from the platen 230 to the lower guide member 216. The lower guide member 216 leads the polishing article 123 onto the take-up roll 252. The platen assembly 132 may also comprise an optical sensing device 220, such as a laser, adapted to transmit and receive optical signals for detecting an endpoint to the planarizing or polishing process performed on a substrate.


The supply roll 254 generally contains an unused portion of polishing article 123 and is configured so that it may easily be replaced with another supply roll 254 containing a new polishing article 123 once the polishing article 123 disposed on the supply roll 254 has been consumed by the polishing or planarizing process. In some embodiments, an energy source 212 may be positioned to apply electromagnetic energy 215 toward an upper surface 221 of the polishing article 123 that is disposed between the supply roll 254 and the take-up roll 252. The electromagnetic energy 215 may be in the form of a beam or a flood of energy and may be used to selectively interact (i.e., ablate and/or heat) with discrete regions of the upper surface 221 of the polishing article 123. The electromagnetic energy 215 may be an electron beam or beams, a laser beam or beams, and combinations thereof. The electromagnetic energy 215 may be used to condition the upper surface 221 of the polishing article 123 before, during or after a polishing process. In some embodiments, the electromagnetic energy 215 is utilized to condition the upper surface 221 of the polishing article 123 during polishing in order to tune the polishing process.


The upper surface 221 of the polishing article 123 is generally configured to controllably advance the polishing article 123 in the X direction across a backing pad assembly 226. The polishing article 123 is generally moved in relation to the platen 230 by balancing the forces between a motor 222 coupled to the supply assembly 206 and a motor 224 coupled to the take-up assembly 208. Ratchet mechanisms and/or braking systems (not shown) may be coupled to one or both of the supply assembly 206 and the take-up assembly 208 to fix the polishing article 123 relative to the backing pad assembly 226. The platen 230 may be operably coupled to a rotary actuator 228 that rotates the platen assembly 132 about a rotational axis generally orthogonal to the X and/or Y directions. A vacuum system 232 may be coupled between the actuator 228 and the backing pad assembly 226. The vacuum system 232 may be used to fix the position of the polishing article 123 onto the platen 230. The vacuum system 232 may include channels 234 formed in a plate 236 disposed below the backing pad assembly 226. The backing pad assembly 226 may include a sub-pad 238 and a subplate 240, each having openings 242 formed therethrough that are in fluid communication with the channels 234 and a vacuum source 244. The sub-pad 238 is typically a plastic, such as polycarbonate or foamed polyurethane. Generally, the hardness or durometer of the sub-pad 238 may be chosen to produce a particular polishing result. The sub-pad 238 generally maintains the upper surface 221 of the polishing article 123 in a plane that is parallel to the plane of a substrate (not shown) in order to promote global planarization of the substrate. The subplate 240 is positioned between the sub-pad 238 and the bottom of the platen 230 such that the upper surface of the sub-pad 238 is maintained generally parallel to a top surface 260 of the platen 230.



FIG. 3A is a schematic isometric view of one embodiment of a pad manufacturing system 300A for preparing a polishing article 123 that may be used on the platen assembly 132 of FIG. 2. In one embodiment, the pad manufacturing system 300A generally includes a feed section 302, a print section 304, a curing section 306 and a pad wind-up section 308. The pad manufacturing system 300A also includes a conveyor 310 including a web 312 disposed between at least two rollers 314. One or both of the rollers 314 may be coupled to a drive motor 315 that rotates the rollers 314 and/or the web 312 in the direction depicted by the arrow indicated as A. The feed section 302, the print section 304, the curing section 306 and the pad wind-up section 308 may be operably coupled to a controller 311. The conveyor 310 may be operated to move continuously or intermittently by the controller 311.


The feed section 302 may include a supply roll 316 that is operably coupled to the conveyor 310. The supply roll 316 may be a backing material 317, such a polymeric material, for example, a biaxially-oriented polyethylene terephthalate (BoPET) material. The supply roll 316 may be disposed on a feed roller 318 that is driven or controlled by a motion control device 320. The motion control device 320 may be a motor and/or include a brake system that provides a predetermined tension on the supply roll 316 such that the unwinding speed of the supply roll 316 is driven by the drive motor 315 and/or the web 312. The feed section 302 may also include a pretreatment device 322. The pretreatment device 322 may be configured to spray or otherwise provide a coating onto the backing material 317 prior to printing at the print section 304. In some embodiments, the pretreatment device 322 may be utilized to heat the backing material 317 prior to printing at the print section 304.


The print section 304 includes a 3D printing station 324 disposed downstream of the feed section 302. The print section 304 utilizes one or more print heads 327 to provide a patterned surface 328 onto the backing material 317. The print section 304 may include a movable platform 330 that is coupled to a motion control device 332 that may be utilized to move the print heads 327 relative to the backing material 317 and the web 312.


The print heads 327 may be coupled to a material source 325 having print materials that may be used to form the patterned surface 328. Print materials may include polymeric materials such as polyurethanes, polycarbonates, fluoropolymers, PTFE, PTFA, polyphenylene sulfide (PPS), or combinations thereof. Examples also include polyvinyl alcohols, pectin, polyvinyl pyrrolidone, hydroxyethylcellulose, methylcellulose, hydropropylmethylcellulose, carboxymethylcellulose, hydroxypropylcellulose, polyacrylic acids, polyacrylamides, polyethylene glycols, polyhydroxyetheracrylites, starches, maleic acid copolymers, polyethylene oxide, polyurethanes and combinations thereof.


In one embodiment, a polymeric material may be deposited as a base material on the backing material 317. The polymeric material formed may comprise an open-pored or closed-pored polyurethane material, and may include nano-scale particles interspersed therein. The particles may include organic nanoparticles. In one embodiment, the nanoparticles may include molecular or elemental rings and/or nanostructures. Examples include allotropes of carbon (C), such as carbon nanotubes and other structures, molecular carbon rings having 5 bonds (pentagonal), 6 bonds (hexagonal), or more than 6 bonds. Other examples include fullerene-like supramolecules. In another embodiment, the nano-scale particles may be a ceramic material, alumina, glass (e.g., silicon dioxide (SiO2)), and combinations or derivatives thereof. In another embodiment, the nano-scale particles may include metal oxides, such as titanium (IV) oxide or titanium dioxide (TiO2), zirconium (IV) oxide or zirconium dioxide (ZrO2), combinations thereof and derivatives thereof, among other oxides.


The patterned surface 328 formed by the print heads 327 may comprise a composite base material, such as a polymeric matrix, which may be formed from urethanes, melamines, polyesters, polysulfones, polyvinyl acetates, fluorinated hydrocarbons, and the like, and mixtures, copolymers and grafts thereof. In one embodiment, the polymeric matrix comprises a urethane polymer that may be formed from a polyether-based liquid urethane. The liquid urethane may be reactive with a polyfunctional amine, diamine, triamine or polyfunctional hydroxyl compound or mixed functionality compounds, such as hydroxyl/amines in urethane/urea cross-linked compositions that form urea links and a cross-linked polymer network when cured.


The curing section 306 includes a curing device 333 that may be disposed in or on a housing 334. The housing 334 is disposed over the web 312 such that the web 312 and the patterned surface 328 on the backing material 317 may pass thereunder. The curing device 333 may be a thermal oven, an ultraviolet (UV) light emitter, or combinations thereof. In one embodiment, the curing device 333 may include one or both of a laser source 336 and an electron beam emitter 338 that may be used to cure the material deposited by the print heads 327 forming the patterned surface 328. In some embodiments, when the electron beam emitter is utilized, the pad manufacturing system 300A may be positioned in an enclosure where the pressure can be controlled. The laser source 336 and the electron beam emitter 338 may be utilized alone or in combination with the thermal or UV energy. In some embodiments, the laser source 336 and the electron beam emitter 338 may be used in a spot curing process where specific portions of the patterned surface 328 are targeted. The spot targeting by the laser source 336 or the electron beam emitter 338 may heat discrete regions of the patterned surface 328 to create a surface of the discrete regions that may be harder or less compressible than the surrounding portions. The laser source 336 may also be used to ablate portions of the patterned surface 328 to create a fine texture thereon.


The pad wind-up section 308 includes a take-up roll 340 where the polishing article 123 may be wound. The take-up roll 340 may be removed from the pad manufacturing system 300A to be utilized as the supply roll 254 in the platen assembly 132 of FIG. 2. During manufacturing, the take-up roll 340 may be coupled to a motion control device 342. The motion control device 342 may be a motor and/or include a brake system that controls the winding speed of the take-up roll 340.



FIG. 3B is a schematic side view of another embodiment of a pad manufacturing system 300B. The pad manufacturing system 300B includes the conveyor 310 having the feed section 302, the print section 304, the curing section 306 and the pad wind-up section 308 that may be similar to the pad manufacturing system 300A of FIG. 3A. However, the pad manufacturing system 300B includes a supply roll 316 that controllably unwinds a web 312 that moves over the conveyor 310 to the take-up roll 340. The web 312 may be a backing material similar to the backing material 317 described in FIG. 3A. Motion of the web 312 as well as the conveyor 310 and the take-up roll 340 may be controlled by motion control devices and a controller similar to the pad manufacturing system 300A described in FIG. 3A and the description is omitted in FIG. 3B for brevity.


The pad manufacturing system 300B includes an optional pretreatment section 344 positioned between the feed section 302 and the print section 304. The pretreatment section 344 may be used to form an adhesive or release layer onto the web 312. Alternatively, an adhesive or release layer may be formed at the print section 304 using the 3D printing station 324. When the pretreatment section 344 is used, a slot/die coater 346 may be used to deposit a layer or layers onto the web 312. Additionally, a curing station 348, utilizing UV light or heating elements, may be used to cure material deposited by the slot/die coater 346.


In this embodiment, the 3D printing station 324 comprises an array of print heads 327. The print heads 327 may be used to optionally form an adhesive or release layer on the web 312 as well as to form the patterned surface 328 on the web 312. In one example, multiple rows and columns of print heads 327 may span the width of the conveyor 310 and a portion of the length of the conveyor 310. In some embodiments, one or more of the print heads 327 may be movable relative to the conveyor 310. The print heads 327 would be coupled to the material source 325 as described in FIG. 3A.


The curing section 306 may include one or both of an optional electromagnetic energy source 350 and a thermal curing device 352. The electromagnetic energy source 350 may be one or a combination of a laser source or an electron beam emitter as described in FIG. 3A. The thermal curing device 352 may be an oven or a UV light array.


The pad wind-up section 308 includes the take-up roll 340 where the polishing article 123 may be wound. The take-up roll 340 may be removed from the pad manufacturing system 300A to be utilized as the supply roll 254 in the platen assembly 132 of FIG. 2.



FIG. 4A is a schematic cross-sectional view of one embodiment of a 3D printing station 324 that may be used in the pad manufacturing system 300A of FIG. 3A or the pad manufacturing system 300B of FIG. 3B. FIG. 4A shows a portion of one embodiment of a polishing article 123 manufactured using a 3D printing process. 3D printing offers a convenient and highly controllable process for producing polishing articles with abrasives embedded in specific locations within the polishing layer. The polishing article 123 may be printed on a support 400, which may be the backing material 317 of FIG. 3A or the web 312 of FIG. 3B.


Referring to FIG. 4A, at least a polishing layer 405 of the polishing article 123 is manufactured using a 3D printing process. In the manufacturing process, thin layers of material are progressively deposited and fused on the support 400 while the support is moved along the arrow indicated by A (in the X direction). For example, droplets 410 of pad precursor material (from the material source 325 of FIG. 3A) can be ejected from a nozzle 326 of a droplet ejecting printer 415 to form a plurality of layers 420A, 420B and 422. The layers may form a solidified material 425 comprising the pad precursor material enabling sequential deposition of other layers thereon. The droplet ejecting printer 415 may be similar to an inkjet printer, but uses the pad precursor material rather than ink. The nozzle 326 may be translated in one or both of the X and the Y direction while the support 400 is continuously or intermittently moved in the X direction during manufacturing.


In one example, a first layer 420A may be deposited by ejection of droplets 410 onto the support 400. Subsequent layers, such as layers 420B and 422 (other layers therebetween are not called out for brevity), can be deposited on the first layer 420A after solidification. After each layer is solidified, a new layer is then deposited over the previously deposited layer until the full 3-dimensional polishing layer 405 is fabricated. Solidification can be accomplished by polymerization. For example, the layers of pad precursor material can be a monomer, and the monomer can be polymerized in-situ by UV curing or thermally. The pad precursor material can be cured effectively immediately upon deposition, or an entire layer of pad precursor material can be deposited and then the layer can be cured simultaneously.


Each layer may be applied by the nozzle 326 in a pattern stored in a 3D drawing computer program that is provided on a controller 311. Each layer 420A, 420B and 422 may be less than 50% or less than the total thickness of the polishing layer 405. In one example, each layer 420A, 420B and 422 may be less than 10% of the total thickness of the polishing layer 405, for example less than 5%, such as about less than 1% of the total thickness of the polishing layer 405. In one embodiment, the thickness of each layer may include a thickness of about 30 microns to about 60 microns or less, such as on the order of nanometers (e.g., 1 to 100 nanometers), and even to picoscale dimensions (e.g., picoscale (10−12 meters).


The support 400 can be a rigid base, or a flexible film, such as a layer of polytetrafluoroethylene (PTFE). If the support 400 is a film, then the support 400 can form a portion of the polishing article 123. For example, the support 400 can be the backing material 317 or a layer between the backing material 317 and the polishing layer 405. Alternatively, the polishing layer 405 can be removed from the support 400 and the layers 420A and 420B may form the backing layer material.


In some embodiments, abrasive particles may be dispersed in the droplets 410 of pad precursor material. The abrasive particles may be locally dispensed into polishing layer 405 during formation of each of the layers. Local dispensing of the abrasive particles may assist in minimization of agglomeration. In some embodiments, abrasive particles can be premixed with a liquid thermoset polymer precursor. Continuous agitation of the mixture of the thermoset polymer precursor and the abrasive particles prevents agglomeration of the particles, similar to apparatus used to homogenize ink pigments used in ink jet printers. In addition, the continuous agitation of the mixture ensures fairly uniform distribution of the abrasive particles in the precursor material. This can result in a more uniform distribution of particles through the polishing layer, which can lead to improved polishing uniformity and can also help avoid agglomeration.


The premixed mixture may be dispensed from a single nozzle (e.g., the nozzle 326) according to a particular pattern. For example, the premixed mixture can be uniformly dispensed to produce a homogeneous polishing layer 405 having a uniform distribution of embedded abrasive particles throughout the thickness of the polishing layer 405.



FIG. 4B is a schematic cross-sectional view of one embodiment of a 3D printing station 324 that may be used in the pad manufacturing system 300A of FIG. 3A or the pad manufacturing system 300B of FIG. 3B. In FIG. 4B, a cross-sectional view of a portion of another embodiment of a polishing article 123 manufactured using a 3D printing process is illustrated. The polishing article 123 is formed by the droplet ejecting printer 415 to include a plurality of structures 450 separated by grooves 455 based on instructions from a CAD program. The structures 450 and grooves 455 may form the polishing layer 405. A sub-layer 430 may also be formed with the polishing article 123 by the droplet ejecting printer 415. The sub-layer 430 may be the backing material 317 (shown in FIG. 3A). For example, the sub-layer 430 and the polishing layer 405 could be fabricated in an uninterrupted operation by the droplet ejecting printer 415. The sub-layer 430 can be provided with a different hardness than the polishing layer 405 by using a different precursor and/or a different amount of curing, for example, a different intensity or duration of UV radiation. In other embodiments, the sub-layer 430 is fabricated by a conventional process and then secured to the polishing layer 405. For example, the polishing layer 405 can be secured to the sub-layer 430 by a thin adhesive layer such as a pressure sensitive adhesive.


In FIG. 4B, a printhead 430A having a nozzle 435, can be used to dispense a pure liquid thermoset polymer precursor, while a printhead 430B having a nozzle 435 may be used to liquid thermoset polymer precursor or a molten thermoplastic having abrasive particles 445 contained therein. The abrasive particles 445 may be dispensed only at selected locations on the polishing article 123. These selected locations collectively form the desired printing pattern of the abrasive particles and can be stored as a CAD-compatible file that is then read by an electronic controller (e.g., the controller 311) that controls the droplet ejecting printer 415. Electronic control signals are then sent to the droplet ejecting printer 415 to dispense the premixed mixture only when the nozzle 435 is translated to the position specified by the CAD-compatible file. Examples of particles 445 may include porogens such as polyethylene glycol (PEG), polyethylene oxide (PEO), hollow particles/microspheres (in sizes of about 5 nm to about 50 μm), e.g., gelatin, chitosan, Si3N4, polymethylmethacrylate (PMMA); mesoporous nanoparticles, carboxyl methyl cellulose (CMC), macroporous hydrogels and emulsion microspheres. Alternatively, a leeching technique can be employed by the combination of a salt particulate (NaCl) and PEG as co-porogens.


Alternatively, instead of using a liquid thermoset polymer precursor, the abrasive particles 445 can be premixed with a molten thermoplastic. In this embodiment, the mixture with abrasive particles 445 is also continuously agitated prior to being dispensed. After the mixture is dispensed from the droplet ejecting printer 415 according to a desired printing pattern, the molten portion of the mixture cools and solidifies, and the abrasive particles 445 are locked in place. The continuous agitation of the mixture ensures fairly uniform distribution of the abrasive particles 445 in the precursor material. This can result in a more uniform distribution of particles 445 through the polishing layer, which can lead to improved polishing uniformity and can also minimize agglomeration.


Similar to the case when liquid thermoset polymer precursor is used, the thermoplastic mixture can be uniformly dispensed to produce a uniform distribution of abrasive particles 445 across the entire polishing layer 405. Alternatively, the thermoplastic mixture containing the abrasive particles can be dispensed only at selected locations of the polishing layer 405, according to a desired printing pattern of the abrasive particles 445 that is stored as a CAD-compatible file and read by an electronic controller used to drive the droplet ejecting printer 415.


Rather than dispensing abrasive particles in a suspension from the nozzle 435 coupled to the printhead 430B, abrasive particles can be dispensed directly in powder form from the nozzle 435 of the printhead 430B, while the nozzle 435 of the printhead 430A is used to dispense the pad polymer precursor. In one embodiment, the polymer precursor is dispensed before the abrasive particles 445 are dispensed into the deposited polymer material, and the mixture is then subsequently cured.


Although 3D printing is particularly useful to construct polishing articles 123 using abrasive particles 445, for example, alumina, ceria, and others, that would be prone to agglomeration when present in conventionally constructed polishing articles, 3D printing can also be used to dispense and incorporate other polishing particles with the polishing articles 123. Thus, the abrasive particles incorporated into the polishing articles 123 can include silica, ceramic oxides, metals and hard polymers.


The droplet ejecting printer 415 can deposit particles 445 that are either solid or particles 445 that have a hollow core. The droplet ejecting printer 415 can also dispense different types of particles, some of which can undergo chemical reactions during CMP processing to produce desired changes on layer or layers of the polishing article 123 as well a chemical reactions with a substrate that is being polished. Examples of chemical reactions used in CMP processing include chemical processes that occur within the basic pH range of 10-14 that involve one or more of potassium hydroxide, ammonium hydroxide and other proprietary chemical processes used by manufactures of slurry. Chemical processes that occur within an acidic pH range of 2-5 involving organic acids such as acetic acid, citric acid are also used in CMP processing. Oxidization reactions involving hydrogen peroxide are also examples of chemical reactions used in CMP processing. Abrasive particles 445 can also be used to provide mechanically abrasive functions. The particles 445 can have sizes up to 1 millimeter, or less, such as 10 microns, or less, for example 1 micron, or less. The particles 445 can have different morphology, for example, the particles 445 can be round, elongated or faceted.


The 3D printing approach allows tight tolerances to be achieved in patterns of the polishing layer 405 and high tolerances in the distribution of abrasive particles 445 that are embedded in the polishing layer 405 due to the layer-by-layer printing approach.


Polishing Articles



FIGS. 5A and 5B depict one embodiment of a polishing article 500 that may be used on the platen assembly 132 of FIG. 2. A polishing surface 505 of the polishing article 500 comprises a plurality of strips or tiles 532 forming the patterned surface 328 of FIGS. 3A and 3B. The tiles 532 are separated by grooves 530 formed in or through a polishing material 570. The polishing material 570 may be adhered to a carrier film, such as a backing material 522. In one embodiment, at least the polishing surface 505 may be manufactured by a 3D printing process as described in FIGS. 3A-4B. The polishing surface 505 may be bound to the backing material 522 by a suitable adhesive 319 that is chosen for resistance to chemical and physical elements used in CMP processes. In some embodiments, one or both of the backing material 522 and the adhesive 319 may be manufactured by a 3D printing process as described in FIGS. 3A-4B.


Each of the plurality of tiles 532 may be connected to another tile 532 by forming the grooves 530 in the polishing material 570 to a depth that is less than the thickness of the polishing material 570. The depth of the grooves 530 may be selected to allow flexibility of, while maintaining integrity in, the polishing material 570. In the embodiment depicted in FIGS. 5A and 5B, the grooves 530 and the tiles 532 are substantially parallel to the cross-machine direction, i.e., transverse to the supply and take up roll direction. The grooves 530 form channels that may enhance slurry retention and delivery to the substrate surface. The grooves 530 are also used to break the surface tension of the polishing material 570, which may be add pliability to facilitate rolling of the polishing article 500 off of a supply roll and onto a take up roll.


In the embodiment shown in FIG. 5A, the tiles 532 are substantially rectangular and are substantially the length of a cross-machine width of the backing material 522. Other embodiments are contemplated, such as two substantially rectangular tiles 532 formed in a length substantially half of a cross-machine width of the backing material 522. In one embodiment, the tiles 532 may be formed such that the polishing article 500 is manufactured with a light or electromagnetic radiation transparent portion 536. The transparent portion 536 may be formed along the length (in the machine direction) of the polishing article 500. The backing material 522, which is also transparent to light or electromagnetic radiation emitted by an optical sensing device 220 (shown in FIG. 2), may be used to facilitate endpoint detection. The width, i.e., the dimension substantially perpendicular to the length, of the tiles 532 may be formed to any dimension. As one example, the tiles 532 may have a width of about 1 inch, or less.


In some embodiments, the polishing material 570 comprises a composite material such as a first material 515 disposed within a second material 520. The second material 520 may be a polymer matrix and the first material 515 may be microelements that are mixed in the first material 515 in one embodiment. The microelements may be a polymeric material, a metallic material, a ceramic material, or combinations thereof. The mean diameter of at least a portion of the microelements may be about 10 nanometers, although a diameter greater than or less than 10 nanometers may be used. The mean diameter of the microelements may be substantially the same or may be varied, having different sizes or mixtures of different sizes, and may be impregnated in the polymeric matrix, as desired. Each of the microelements may be spaced apart at a mean distance of about 0.1 micron to about 100 microns. The microelements may be substantially uniformly distributed throughout the polymeric base material.


The first material 515 may have a different reactivity with electromagnetic energy, such as a beam or beams of energy from the energy source 212 (shown in FIG. 2) when compared with the second material 520. The different reactivity may be used to form a micro texture on the polishing surface 505. The different reactivity between the first material 515 and the second material 520 may provide that the first material 515 will be ablated at a greater rate that the second material 520, or vice versa. The polymer microelements may be micron sized or nano sized materials that form micron sized or nano sized domains within the polishing surface 505 of the polishing article 500. Each of the microelements may include a mean diameter which is less than about 150 microns to about 10 microns, or less.



FIGS. 6A and 6B depict another embodiment of the polishing article 600 that may be used on the platen assembly 132 of FIG. 2. The polishing article 600 has a polishing surface 605 forming the patterned surface 328 of FIGS. 3A and 3B. The polishing surface 605 comprises a plurality of strips or tiles 632 separated by adjacent transverse grooves 630 formed in or through a polishing material 670 and adhered to a backing material 522. In this embodiment, the polishing material 570 includes a plurality of particles 445, as described in FIG. 4B, intermixed therein. Each of the plurality of strips or tiles 632 may be connected to each other by forming each of the grooves 630 in the polishing material 670 to a depth that is less than the thickness of the polishing material 670. The depth of the grooves 630 may be selected to allow flexibility in, while maintaining integrity of, the polishing material 670. Alternatively, the polishing material 670 may exhibit a modulus of elasticity or other mechanical attributes to facilitate movement in a roll format that obviates the need for the backing material 522. In this embodiment, the plurality of tiles 432 may be formed by the plurality of grooves and used in a roll format without an adhesive 319 and the backing material 522. As another alternative, the polishing material 570 may be formed such that the grooves 630 form a tile 632 that is separate or discrete, and is bound to the backing material 522 by a suitable adhesive 519. In the embodiment depicted, the polishing article 600 has corresponding lateral grooves 635, which are added to aid in slurry retention and delivery to the substrate, and to enhance flexibility of the polishing article 600.


The tiles 632 may be any shape and dimension to facilitate efficient polishing. In one embodiment, the tiles 632 may be formed such that the polishing article 600 is manufactured with a light or electromagnetic radiation transparent portion 636. The transparent portion 636 may be formed along the length (in the machine direction) of the polishing article 600. The backing material 522, which is also transparent to light or electromagnetic radiation emitted by an optical sensing device 220 (FIG. 2), may be used to facilitate endpoint detection.



FIGS. 7A and 7B depict another embodiment of a polishing article 700 that may be used on the platen assembly 132 of FIG. 2. The polishing article 700 has a polishing surface 705 forming the patterned surface 328 of FIGS. 3A and 3B. The polishing surface 705 includes a plurality of pores 732 formed in the polishing material 570. The polishing material 570 may be bound to the backing material 522 by a suitable adhesive 519 that is chosen for resistance to chemical and physical elements used in CMP processes. The pores 732 in the polishing article 123 are substantially circular or oval shapes, but may comprise other annular geometric shapes, such as a cone or hollow frustum i.e., a cone between substantially parallel planes. As in other embodiments, a lateral portion 736 may be transparent to allow monitoring of a substrate by an optical sensing device 220 (FIG. 2).


In one embodiment, the pores 732 may be hollow (i.e., empty space) that are sized and/or spaced to enhance slurry retention and aid in rolling of the polishing article 700. In other embodiments, the pores 732 may be filled at least partially with a first material 710 that is different that the polishing material 570 (a second material 712). The first material 710 may be a polymer material that has a different reactivity to a curing method as compared to the second material 712. For example, the second material 712 may be curable with UV energy while the first material 710 is not significantly affected by UV energy. However, the first material 710 may be cured thermally in one embodiment. In one embodiment, the polishing article 700 may be differentially cured using the first material 710 and the second material 712. In one example of differential curing, the first material 710 and the second material 712 of the polishing article 700 may be cured with UV energy that does not cure the first material 710. This may make the second material 712 harder than the first material 710 which may add compressibility and/or flexibility to the polishing article 700 as the first material 710 in more viscous than the second material 712.


In one embodiment, the first material 710 is thermally cured to make the pores 732 having the first material 710 therein harder, but softer and more compressible than the second material 712. In another embodiment, the first material 710 in the pores 732 is cured thermally by heat produced by friction during a substrate polishing process. In this embodiment, the first material 710 may be cured to be harder than the second material 712 thus forming domains on the polishing surface 705 that are harder than the surrounding second material 712.


In other embodiments, the first material 710 may have a different reactivity with electromagnetic energy, such as a beam or beams of energy from the energy source 212 (shown in FIG. 2) when compared with the second material 712. The different reactivity may be used to form a micro texture on the polishing surface 705. The different reactivity between the first material 710 and the second material 712 may provide that the first material 710 will be ablated at a greater rate than the second material 712, or vice versa. The pores 732 may be micron sized or nano sized materials that form micron sized or nano sized domains within the polishing surface 705 of the polishing article 700. In one embodiment, the pores 732 may include a mean diameter which is less than about 150 microns to about 10 microns, or less.


In the above embodiments of the polishing articles 123, 500, 600 or 700, the backing material 317 or 522 is a plastic material, such as a polyester film, for example biaxially-oriented polyethylene terephthalate or polyethylene terephthalate material, that may be formed by a 3D printing process or as a base material in a 3D printing process. The backing material 317 or 522 may be provided at a thickness of about 0.002 inches (50.8 μm) to about 0.012 inches (304.8 μm), for example, about 0.004 inches (101.6 μm). The patterned surface 328 and the polishing material 570, 670 or 770 may be a polymeric material with a hardness in a range of about 20-80 on the Shore D scale. In a one embodiment, the thickness of the polishing article 123 is between about 0.019 inches (482.6 μm) to about 0.060 inches (1,524 μm).



FIG. 8 is a schematic perspective sectional view of a polishing article 800 that may be used as the polishing article 123 on the platen assembly 132 of FIG. 2. The polishing article 800 includes a composite pad body 802 which may be a base material layer formed from a soft material intermixed with hard features 804. The composite pad body 802 may be formed by 3D printing. A plurality of raised features 806 may include one or more layers of soft material 805 at least partially surrounding the hard features 804. In one embodiment, the hard features 804 may have a hardness of about 40 Shore D scale to about 90 Shore D scale. The soft material 805 as well as the remainder of the composite pad body 802 may have a hardness value between about 26 Shore A scale to about 95 Shore A scale.


The composite pad body 802 includes plurality of layers, each layer including regions of a first material for the soft material 805 and regions of a second material for the hard features 804 that may be deposited by a 3D printer. The plurality of layers may then be cured, for example by UV light, by a heat source, or electromagnetic energy to solidify and achieve a desired hardness. After deposition and curing, the hard features 804 and the soft material 805 are joined together to form a unitary composite pad body 802.


The soft material 805 may be formed from the first material having a lower hardness value and a lower value of Young's modulus while the hard features 804 may be formed from the second material having a higher hardness value and a higher value of Young's modulus.


The hard features 804 may be formed from a polymer material, for example, polyurethane, acrylate, epoxy, acrylonitrile butadiene styrene (ABS), polyetherimide, polyamides, melamines, polyesters, polysulfones, polyvinyl acetates, fluorinated hydrocarbons, and the like, and mixtures, copolymers and grafts thereof. In one embodiment, the hard feature may be formed from a simulating plastic 3D printing material such as polyether ketones (PEEK), polyphenylsulfone (PPS), polyoxymethylene (POM), and the like. The hard feature may also be provided by precursor materials and/or urethanes can be engineered to be the hard features. In one embodiment, abrasive particles may be embedded in the hard features 604 to enhance polishing. The abrasive particles may be a metal oxide, such as ceria, alumina, silica, or a combination thereof, polymeric, inter-metallic or ceramics.


The soft material 805 may be formed from an elastomer material, for example, elastomeric polyurethanes. In one embodiment, the soft material 805 may be formed from a rubber-like 3D printing material, such as polybutadiene, isoprene, chloroprene, EPDM, and the like. The elastic feature may also be provided by precursor materials and/or urethanes can be engineered to be rubbery to provide the elastic features.


In one embodiment, the raised features 806 may in a linear pattern, a rectangular pattern of be in a concentric ring or a line pattern. Grooves 818 are formed between the raised features 806. During polishing, the upper surfaces 808 of the raised features 806 form a patterned surface 251 that contacts the substrate, while the grooves 818 retains polishing fluid.


In one embodiment, a width of the raised features 806 may be about 250 microns to about 2 millimeters. A pitch between the raised features 806 may be about 0.5 millimeters to about 5 millimeters. Each raised feature 806 may have a width of about 250 microns to about 2 millimeters and may include the same pitch, or the width and/or the pitch may vary across a radius of the polishing article 800 to provide zones of varied hardness.


Compared with other polishing articles, the composite polishing article 800 of the present disclosure has several advantages. Traditional polishing articles generally include a polishing layer with a textured polishing surface and/or an abrasive materials supported by a sub pad formed from a soft material, such as a foam, to obtain desired hardness or Young's modulus for polishing substrates. By selecting materials of various Young's modules, adjusting dimensions of the features or varying arrangements of the different features with the use of 3D printing, a desirable hardness or Young's modulus may be achieved in the composite pad body 802 without using a sub pad. Therefore, the polishing article 800 reduces cost of ownership by eliminating sub pads. Additionally, hardness and abrasiveness of the polishing article 800 may be tuned by mixing features with different hardness and abrasiveness, therefore, improving polishing performance.


Composite polishing articles according to the present disclosure may have variable Young's modulus across surface features, such as the hard features 604, and base material, such as the soft material 805, by pattern variation and/or feature size variation. Young's modulus across the polishing pads may be symmetric or non-symmetric, uniform or non-uniform to achieve desired properties. Patterning of the raised features 806 may be radial, concentric, rectangular, or random according to achieve desired property.


Outer surfaces 808 of the raised features 806 are formed from a polymer material that is softer or more elastic than the hard features 804. In one embodiment, the outer surface 808 of the raised features 806 may be formed from the same material as the base material layer 802. In some embodiments, the raised features 806 include the hard feature 804 embedded therein. The embedded hard features 804 provide hardness and rigidity desired for polishing. The soft polymeric layer of the outer surface 808 may reduce defects and improve planarization on the substrate being polished. Alternatively, a soft polymer material may be printed on surfaces of other polishing pads of the present disclosure to provide the same benefit.



FIG. 9 is a schematic perspective sectional view of a polishing pad 900 having an observation window 910 similar to the electromagnetic radiation transparent portion 536 described in FIG. 5A. The polishing pad 900 may be used as the polishing article 1223 on the platen assembly 132 of FIG. 2 as well as other embodiments of polishing pads as described herein. A composite pad body 902 includes one or more hard features 904 and one or more elastic features 906. The hard features 604 and the elastic features 606 are discrete features that are joined together at boundaries to form the composite pad body 602 and may include the materials described above with the soft material 805 and the hard features 804.


The polishing pad 900 may include one or more elastic features 906 and a plurality of hard features 904 extending from the elastic features 906. In one embodiment, the hard features 904 may have a hardness of about 40 Shore D scale to about 90 Shore D scale. The elastic features 906 may have a hardness value between about 26 Shore A scale to about 95 Shore A scale. The hard features 904 may be arranged in any suitable patterns according to the present disclosure.


The observation window 910 may be formed from a transparent material to provide monitoring of a substrate being polished. The observation window 910 may be formed through the elastic feature 906 or the hard features 904. In one embodiment, the observation window 910 may be formed from a transparent 3D printing photopolymer. In one embodiment, the observation window 910 may be formed from UV transmissible polyurethane acrylates, polyester acrylates, polyether acrylates, polymethylmethacrylate (PMMA).



FIG. 10 is a schematic sectional view of a polishing article 600 including a backing layer 1006. The polishing pad 1000 may be used as the polishing article 1223 on the platen assembly 132 of FIG. 2 as well as other embodiments of polishing pads as described herein. The polishing pad 1000 includes a base material layer 1004 and a plurality of surface features 1002 protruding from the base material layer 1004. The polishing pad 1000 may be similar to the polishing articles 500, 600, 700, 800 or 900 described above with the exception of having the backing layer 1006 attached to the base material layer 1004. The backing layer 1006 may provide compressibility to the polishing article 1000. The backing layer 1006 may have a hardness value of less than 80 Shore A scale, in one embodiment.


In one embodiment, the backing layer 1006 may be formed from an open-cell or a closed-cell foam, such as polyurethane or polysilicone with voids, so that under pressure, the cells collapse and the backing layer 1006 compresses. In another embodiment, the backing layer 1006 may be formed from natural rubber, ethylene propylene diene monomer (EPDM) rubber, nitrile, or polychloroprene (neoprene).



FIG. 11 is a schematic sectional view of a polishing article 1100 having multiple zones. The polishing article 1100 may be designed to have different properties in regions contacting a central area of a substrate 121 than regions contacting peripheral portions of the substrate 121 during polishing. FIG. 11 schematically illustrates the carrier head 152 positioning the substrate 121 relative to the polishing article 1100. In one embodiment, the polishing article 1100 may include a composite pad body 1102 disposed on a backing layer 1104. The composite pad body 1102 may be manufactured by a 3D printing process. As shown in FIG. 11, the polishing pad 1100 may be divided into an outer edge zone 1106, an inner edge zone 1108 along the radius thereof, and a central zone 1110. The outer edge zone 1106 and the inner edge zone 1108 contact the edge region of the substrate 114 during polishing while the central zone 1110 contacts the central region of the substrate 114 during polishing.


The polishing pad 1100 has a different modulus on the edge zones 1106, 1108 as compared to the central zone 1110, to improve edge polishing quality. In one embodiment, the edge zones 1106, 1108 may have a lower Young's modulus than the central zone 1110.



FIG. 12 is a partial enlarged sectional view of the polishing article 1100 of FIG. 11 showing an exemplary design for the edge zone 1106 and the inner edge zone 1108. The edge zone 1106 includes a base material layer 1206 and a plurality of surface features 1202. The surface features 1204 may be formed from materials harder than the base material layer 1206. The inner edge zone 1108 includes a base material layer 1208 and a plurality of surface features 1204. The surface features 1202 may be formed from materials harder than the base material layer 1208. In one embodiment, the central zone 1108 may include a locking layer 1210 under the base material layer 1208. The locking layer 1210 may be formed from a hard material. The plurality of surface features 1204 may be printed on the locking layer 1210 to improve stability. As shown in FIG. 12, the surface features 1202 in the inner edge zone 1108 are larger in size than the surface features 1204 in the outer edge zone 1106. In one embodiment, the pitch of the surface features 1204 in the edge zone 1106 may be less than the pitch of the surface features 1202 in the inner edge zone 1108.


While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims
  • 1. A polishing article, comprising: a unitary composite pad body formed of a plurality of printer deposited layers, the unitary pad body comprising a base region and a plurality of raised features extending from the base region to form a polishing surface, wherein: the base region is formed of a first material,the plurality of raised features comprise regions of the first material and regions of a second material, wherein the regions of the second material are at least partially surrounded by the first material, andthe regions of the second material comprise discrete regions within a cross-linked polymer matrix of the first material and the second material which forms the unitary composite pad body.
  • 2. The polishing article of claim 1, wherein the second material has a hardness greater than a hardness of the first material.
  • 3. The polishing article of claim 1, wherein the second material is formed of polyurethane, acrylate, epoxy, acrylonitrile butadiene styrene (ABS), polyetherimide, polyamides, melamines, polyesters, polysulfones, polyvinyl acetates, fluorinated hydrocarbons, or combinations thereof.
  • 4. The polishing article of claim 1, wherein the regions of the second material have a hardness in a range from about 40 Shore D scale to about 90 Shore D scale.
  • 5. The polishing article of claim 1, wherein the regions of the first material have a hardness in a range from about 26 Shore A scale to about 95 Shore A scale.
  • 6. The polishing article of claim 1, wherein a Young's modulus of the regions of the second material is greater than a Young's modulus of the regions of the first material.
  • 7. The polishing article of claim 1, wherein the second material comprises a gel.
  • 8. The polishing article of claim 1, wherein the second material comprises polyethylene glycol (PEG).
  • 9. The polishing article of claim 1, wherein the second material comprises polyethylene oxide (PEO), hydrogel, polymethylmethacrylate (PMMA), or carboxyl methyl cellulose (CMC).
  • 10. A polishing article, comprising: a base material layer and a plurality of raised features extending from the base material layer to form a unitary pad body, wherein: the base material layer is formed of a first plurality of sequentially deposited layers comprising a first material,the plurality of raised features are formed of a second plurality of sequentially deposited layers comprising the first material and discrete regions of a second material at least partially surrounded by the first material, andthe regions of the second material form a cross-linked polymer matrix with the first material at interfacial boundaries thereof.
  • 11. The polishing article of claim 10, wherein the second material is formed of polyurethane, acrylate, epoxy, acrylonitrile butadiene styrene (ABS), polyetherimide, polyamides, melamines, polyesters, polysulfones, polyvinyl acetates, fluorinated hydrocarbons, or combinations thereof.
  • 12. The polishing article of claim 10, wherein the regions of the second material have a hardness in a range from about 40 Shore D scale to about 90 Shore D scale.
  • 13. The polishing article of claim 10, wherein regions of the first material have a hardness in a range from about 26 Shore A scale to about 95 Shore A scale.
  • 14. The polishing article of claim 10, wherein the discrete regions of the second material form a non-random pattern within the plurality of raised features.
  • 15. The polishing article of claim 14, wherein the second material comprises a gel.
  • 16. A polishing pad, comprising: a plurality of raised features extending upward from a base material layer, wherein: the base material layer and the plurality of raised features are each formed of pluralities of sequentially deposited layers to collectively comprise a unitary pad body,the base material layer comprises a first material,the plurality of raised features comprise the first material and a second material,the second material is disposed in a plurality of discrete regions at least partially surrounded by the first material, andthe second material is joined to the first material to form a polymer matrix at boundaries thereof.
  • 17. The polishing pad of claim 16, wherein: the plurality of discrete regions of the second material have a hardness in a range from about 40 Shore D scale to about 90 Shore D scale, andregions of the first material have a hardness in a range from about 26 Shore A scale to about 95 Shore A scale.
  • 18. The polishing pad of claim 16, wherein: the second material comprises an acrylate, andthe plurality of discrete regions of the second material are disposed in a non-random pattern.
CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No. 15/722,810, filed Oct. 2, 2017, now U.S. Pat. No. 10,493,691, which is a continuation of U.S. patent application Ser. No. 14/863,409, filed Sep. 23, 2015, now U.S. Pat. No. 9,776,361, which claims benefit of U.S. Provisional Patent Application No. 62/065,533 filed Oct. 17, 2014. Each of the aforementioned related patent applications is herein incorporated by reference in their entirety.

US Referenced Citations (750)
Number Name Date Kind
2001911 Wooddell et al. May 1935 A
3357598 Kraft Dec 1967 A
3741116 Green et al. Jun 1973 A
4459779 Shen Jul 1984 A
4575330 Hull Mar 1986 A
4836832 Tumey et al. Jun 1989 A
4841680 Hoffstein et al. Jun 1989 A
4844144 Murphy et al. Jul 1989 A
4942001 Murphy et al. Jul 1990 A
4960673 Beck et al. Oct 1990 A
5096530 Cohen Mar 1992 A
5120476 Scholz Jun 1992 A
5121329 Crump Jun 1992 A
5178646 Barber, Jr. et al. Jan 1993 A
5193316 Olmstead Mar 1993 A
5212910 Breivogel et al. May 1993 A
5287663 Pierce et al. Feb 1994 A
5300417 Lushington et al. Apr 1994 A
5378527 Nakanishi et al. Jan 1995 A
5387380 Cima et al. Feb 1995 A
5470368 Culler Nov 1995 A
5533923 Shamouilian et al. Jul 1996 A
5605499 Sugiyama et al. Feb 1997 A
5605760 Roberts Feb 1997 A
5609517 Lofaro Mar 1997 A
5624303 Robinson Apr 1997 A
5626919 Chapman et al. May 1997 A
5645471 Strecker Jul 1997 A
5664986 Roh Sep 1997 A
5690540 Elliott et al. Nov 1997 A
5738574 Tolles et al. Apr 1998 A
5748434 Rossman et al. May 1998 A
5778481 Amsden et al. Jul 1998 A
5795218 Poan et al. Aug 1998 A
5876268 Lamphere et al. Mar 1999 A
5876490 Ronay Mar 1999 A
5888121 Kirchner et al. Mar 1999 A
5900164 Budinger et al. May 1999 A
5905099 Everaerts et al. May 1999 A
5906863 Lombardi et al. May 1999 A
5910471 Christianson et al. Jun 1999 A
5919082 Walker et al. Jul 1999 A
5921855 Osterheld et al. Jul 1999 A
5932040 Audisio Aug 1999 A
5932290 Lombardi et al. Aug 1999 A
5940674 Sachs et al. Aug 1999 A
5944583 Cruz et al. Aug 1999 A
5951380 Kim Sep 1999 A
5965460 Rach et al. Oct 1999 A
5976000 Hudson Nov 1999 A
5984769 Bennett et al. Nov 1999 A
5989111 Lamphere et al. Nov 1999 A
5989470 Poan et al. Nov 1999 A
6017609 Akamatsu et al. Jan 2000 A
6022264 Cook et al. Feb 2000 A
6029096 Manners et al. Feb 2000 A
6036579 Cook et al. Mar 2000 A
6039836 Dhindsa et al. Mar 2000 A
6062968 Sevilla et al. May 2000 A
6077581 Kuramochi et al. Jun 2000 A
6090475 Robinson et al. Jul 2000 A
6095084 Shamouilian et al. Aug 2000 A
6095902 Reinhardt Aug 2000 A
6117000 Anjur et al. Sep 2000 A
6121143 Messner et al. Sep 2000 A
6122564 Koch et al. Sep 2000 A
6126532 Sevilla et al. Oct 2000 A
6155910 Lamphere et al. Dec 2000 A
6176992 Talieh Jan 2001 B1
6201208 Wendt et al. Mar 2001 B1
6206759 Agarwal et al. Mar 2001 B1
6210254 Cook et al. Apr 2001 B1
6213845 Elledge Apr 2001 B1
6228133 Thurber et al. May 2001 B1
6231629 Christianson et al. May 2001 B1
6231942 Blizard et al. May 2001 B1
6232236 Shan et al. May 2001 B1
6241596 Osterheld et al. Jun 2001 B1
6254460 Walker et al. Jul 2001 B1
6257973 Fernand Guiselin Jul 2001 B1
6267641 Vanell et al. Jul 2001 B1
6273806 Bennett et al. Aug 2001 B1
6309276 Tsai et al. Oct 2001 B1
6309282 Wright et al. Oct 2001 B1
6319108 Adefris et al. Nov 2001 B1
6322728 Brodkin et al. Nov 2001 B1
6325706 Krusell et al. Dec 2001 B1
6328634 Shen et al. Dec 2001 B1
6332832 Suzuki Dec 2001 B1
6338901 Veerasamy Jan 2002 B1
6361411 Chopra et al. Mar 2002 B1
6361832 Agarwal et al. Mar 2002 B1
6368184 Beckage Apr 2002 B1
6390890 Molnar May 2002 B1
6399501 Birang et al. Jun 2002 B2
6402604 Guiselin Jun 2002 B2
6407669 Brown et al. Jun 2002 B1
6423255 Hoechsmann et al. Jul 2002 B1
6428586 Yancey Aug 2002 B1
6454634 James et al. Sep 2002 B1
6477926 Swisher et al. Nov 2002 B1
6488570 James et al. Dec 2002 B1
6500053 James et al. Dec 2002 B2
6506097 Adams et al. Jan 2003 B1
6518162 Ono et al. Feb 2003 B2
6520834 Marshall Feb 2003 B1
6520847 Osterheld et al. Feb 2003 B2
6544373 Chen et al. Apr 2003 B2
6548407 Chopra et al. Apr 2003 B1
6569373 Napadensky May 2003 B2
6582283 James et al. Jun 2003 B2
6585563 Redeker et al. Jul 2003 B1
6586494 Mejiritski et al. Jul 2003 B2
6592443 Kramer et al. Jul 2003 B1
6641463 Molnar Nov 2003 B1
6641471 Pinheiro et al. Nov 2003 B1
6645061 Bennett et al. Nov 2003 B1
6682402 Roberts et al. Jan 2004 B1
6684704 Obeng Feb 2004 B1
6685548 Chen et al. Feb 2004 B2
6692338 Kirchner Feb 2004 B1
6699115 Osterheld et al. Mar 2004 B2
6719818 Birang et al. Apr 2004 B1
6736709 James et al. May 2004 B1
6736714 Dudovicz May 2004 B2
6746225 McHugh Jun 2004 B1
6746311 Kessel Jun 2004 B1
6749485 James et al. Jun 2004 B1
6749714 Ishikawa et al. Jun 2004 B1
6773474 Koehnle et al. Aug 2004 B2
6783436 Muldowney Aug 2004 B1
6790883 Ogawa et al. Sep 2004 B2
6796880 Redeker et al. Sep 2004 B2
6811680 Chen et al. Nov 2004 B2
6811937 Lawton Nov 2004 B2
6815570 Negiz et al. Nov 2004 B1
6833046 Wright Dec 2004 B2
6838149 Lugg Jan 2005 B2
6840843 Jones et al. Jan 2005 B2
6843711 Muldowney Jan 2005 B1
6847014 Benjamin et al. Jan 2005 B1
6855588 Liao et al. Feb 2005 B1
6860793 Budinger et al. Mar 2005 B2
6860802 Vishwanathan et al. Mar 2005 B1
6866807 Comb et al. Mar 2005 B2
6869350 Roberts et al. Mar 2005 B2
6875096 Park et al. Apr 2005 B2
6875097 Grunwald Apr 2005 B2
6887137 Lee et al. May 2005 B2
6896593 Prasad May 2005 B2
6896765 Steger May 2005 B2
6913517 Prasad Jul 2005 B2
6935931 Prasad Aug 2005 B2
6950193 Discenzo Sep 2005 B1
6955588 Anderson, II et al. Oct 2005 B1
6984163 Roberts Jan 2006 B2
6991517 Redeker et al. Jan 2006 B2
6991528 Hu et al. Jan 2006 B2
6998166 Prasad Feb 2006 B2
7018560 Liu et al. Mar 2006 B2
7029747 Huh et al. Apr 2006 B2
7044836 Sun et al. May 2006 B2
7059949 Elmufdi et al. Jun 2006 B1
7059950 Muldowney Jun 2006 B1
7077879 Ogawa et al. Jul 2006 B2
7120512 Kramer et al. Oct 2006 B2
7125318 Muldowney Oct 2006 B2
7132033 Boldizar et al. Nov 2006 B2
7166017 Minamihaba et al. Jan 2007 B2
7169030 Kulp Jan 2007 B1
7186164 Manens Mar 2007 B2
7186322 Sato et al. Mar 2007 B2
7192336 Kramer et al. Mar 2007 B2
7195544 Prasad Mar 2007 B2
7204742 Prasad Apr 2007 B2
7234224 Naugler et al. Jun 2007 B1
7252871 Crkvenac et al. Aug 2007 B2
7264641 Prasad Sep 2007 B2
7267607 Prasad Sep 2007 B2
7267610 Elmufdi et al. Sep 2007 B1
7268173 Graichen et al. Sep 2007 B2
7300340 Elmufdi et al. Nov 2007 B1
7300619 Napadensky et al. Nov 2007 B2
7311590 Muldowney Dec 2007 B1
7311862 Prasad Dec 2007 B2
7332104 Minamihaba et al. Feb 2008 B2
7357698 Choi Apr 2008 B2
7371160 Cruz et al. May 2008 B1
7377840 Deopura et al. May 2008 B2
7382959 Jacobsen Jun 2008 B1
7425172 Misra et al. Sep 2008 B2
7425250 Basol et al. Sep 2008 B2
7427340 Mavliev et al. Sep 2008 B2
7435161 Prasad et al. Oct 2008 B2
7435165 Prasad Oct 2008 B2
7438636 Kulp et al. Oct 2008 B2
7438795 Wylie et al. Oct 2008 B2
7445847 Kulp Nov 2008 B2
7455571 Kuo et al. Nov 2008 B1
7497885 Kollodge Mar 2009 B2
7513818 Miller et al. Apr 2009 B2
7517277 Muldowney Apr 2009 B2
7517488 Saikin Apr 2009 B2
7520798 Muldowney Apr 2009 B2
7524345 Nevoret et al. Apr 2009 B2
7530880 Bajaj et al. May 2009 B2
7531117 Ederer et al. May 2009 B2
7537446 James et al. May 2009 B2
7582127 Vacassy et al. Sep 2009 B2
7635290 Muldowney Dec 2009 B2
7648645 Roberts et al. Jan 2010 B2
7652286 Isobe et al. Jan 2010 B2
7699684 Prasad Apr 2010 B2
7704122 Misra et al. Apr 2010 B2
7704125 Roy et al. Apr 2010 B2
7731568 Shimomura et al. Jun 2010 B2
7754118 Huh et al. Jul 2010 B2
7758764 Dhindsa et al. Jul 2010 B2
7762870 Ono et al. Jul 2010 B2
7815778 Bajaj Oct 2010 B2
7828634 Jiang et al. Nov 2010 B2
7840305 Behr et al. Nov 2010 B2
7846008 Bajaj Dec 2010 B2
7871309 Ogawa et al. Jan 2011 B2
7875091 Nevorct et al. Jan 2011 B2
7926521 Zumoto et al. Apr 2011 B2
7935276 Zhou et al. May 2011 B2
7943681 Lee et al. May 2011 B2
7976901 Kume et al. Jul 2011 B2
8047899 Chen et al. Nov 2011 B2
8053487 Ragain, Jr. et al. Nov 2011 B2
8057282 Muldowney Nov 2011 B2
8062102 Park et al. Nov 2011 B2
8062103 Muldowney Nov 2011 B2
8066555 Bajaj Nov 2011 B2
8067814 Takehara et al. Nov 2011 B2
8075372 Prasad Dec 2011 B2
8075745 Bajaj Dec 2011 B2
8083820 Kollodge et al. Dec 2011 B2
8111603 Nishimura et al. Feb 2012 B2
8118641 Kulp et al. Feb 2012 B2
8142860 Vanmaele et al. Mar 2012 B2
8142869 Kobayashi et al. Mar 2012 B2
8172648 Lefevre et al. May 2012 B2
8177603 Bajaj May 2012 B2
8211324 Dhindsa et al. Jul 2012 B2
8211543 Kato et al. Jul 2012 B2
8257545 Loyack et al. Sep 2012 B2
8260447 Mattes et al. Sep 2012 B2
8282866 Hiraide Oct 2012 B2
8287793 Deopura et al. Oct 2012 B2
8288448 Kulp Oct 2012 B2
8292592 Welch et al. Oct 2012 B2
8292692 Bajaj Oct 2012 B2
8337282 Park et al. Dec 2012 B2
8349706 Noda Jan 2013 B2
8377623 Fong Feb 2013 B2
8380339 Misra et al. Feb 2013 B2
8388410 Albright, Jr. Mar 2013 B2
8393934 Sung Mar 2013 B2
8398461 Wang Mar 2013 B2
8398466 Sung et al. Mar 2013 B2
8409976 Hieslmair Apr 2013 B2
8444890 Drury May 2013 B2
8545292 Shinchi et al. Oct 2013 B2
8546717 Stecker Oct 2013 B2
8562389 Benvegnu et al. Oct 2013 B2
8563619 Dhindsa et al. Oct 2013 B2
8598523 Stecker et al. Dec 2013 B2
8602851 Lombardo et al. Dec 2013 B2
8647179 Nakayama et al. Feb 2014 B2
8673166 Okita et al. Mar 2014 B2
8676537 Liu et al. Mar 2014 B2
8684794 Lefevre et al. Apr 2014 B2
8690978 Arnaud et al. Apr 2014 B2
8702479 Huang et al. Apr 2014 B2
8709114 Cantrell et al. Apr 2014 B2
8712571 Liu et al. Apr 2014 B2
8715035 Roy et al. May 2014 B2
8734206 Chang et al. May 2014 B2
8734664 Yang et al. May 2014 B2
8784721 Philippi et al. Jul 2014 B2
8801949 Lakrout et al. Aug 2014 B2
8821214 Joseph Sep 2014 B2
8845852 Nakamori et al. Sep 2014 B2
8853082 Hanano et al. Oct 2014 B2
8853527 Hieslmair Oct 2014 B2
8864859 Roy et al. Oct 2014 B2
8883392 Napadensky et al. Nov 2014 B2
8888480 Yoo et al. Nov 2014 B2
8894799 Lakrout Nov 2014 B2
8932116 Deopura et al. Jan 2015 B2
8932511 Napadensky Jan 2015 B2
8968058 Kerprich et al. Mar 2015 B2
8980749 Itai et al. Mar 2015 B1
8986585 Cantrell et al. Mar 2015 B2
8988848 Todorow et al. Mar 2015 B2
9017140 Allison et al. Apr 2015 B2
9033764 Kitamura et al. May 2015 B2
9053908 Sriraman et al. Jun 2015 B2
9067297 Allison et al. Jun 2015 B2
9067298 Lefevre et al. Jun 2015 B2
9067299 Bajaj et al. Jun 2015 B2
9068085 Kim et al. Jun 2015 B2
9089943 Lipson Jul 2015 B2
9108291 Lakrout Aug 2015 B2
9126304 Kimura Sep 2015 B2
9138858 Benvegnu et al. Sep 2015 B2
9152006 Farrand et al. Oct 2015 B2
9152340 Wu et al. Oct 2015 B2
9156124 Allison et al. Oct 2015 B2
9162340 Joseph et al. Oct 2015 B2
9162341 LeFevre et al. Oct 2015 B2
9211628 Allison et al. Dec 2015 B2
9216546 DeSimone et al. Dec 2015 B2
9254545 Park Feb 2016 B2
9259820 Qian et al. Feb 2016 B2
9259821 Qian et al. Feb 2016 B2
9278424 Roy et al. Mar 2016 B2
9296085 Bajaj et al. Mar 2016 B2
9308620 Schutte et al. Apr 2016 B2
9314897 Qian et al. Apr 2016 B2
9333620 Qian et al. May 2016 B2
9352443 Suen et al. May 2016 B2
9375821 Chen et al. Jun 2016 B2
9375822 Hsu et al. Jun 2016 B2
9393740 Okamoto et al. Jul 2016 B2
9421666 Krishnan et al. Aug 2016 B2
9425121 Tsai et al. Aug 2016 B2
9457520 Bajaj et al. Oct 2016 B2
9469800 Jung Oct 2016 B2
9472410 Sadjadi et al. Oct 2016 B2
9481069 Chen et al. Nov 2016 B2
9505952 Reiss et al. Nov 2016 B2
9536711 Dhindsa et al. Jan 2017 B2
9536769 Sadjadi et al. Jan 2017 B1
9583357 Long et al. Feb 2017 B1
9587127 Herlihy et al. Mar 2017 B2
9601319 Bravo et al. Mar 2017 B1
9620376 Kamp et al. Apr 2017 B2
9630249 Toyserkani et al. Apr 2017 B2
9669512 Bajaj et al. Jun 2017 B2
9718129 Ljungblad et al. Aug 2017 B2
9735037 Cox Aug 2017 B2
9744724 Bajaj et al. Aug 2017 B2
9761459 Long et al. Sep 2017 B2
9776361 Krishnan et al. Oct 2017 B2
9805965 Sadjadi et al. Oct 2017 B2
9852889 Kellogg et al. Dec 2017 B1
9868230 Dikovsky et al. Jan 2018 B2
9873180 Bajaj et al. Jan 2018 B2
9881820 Wong et al. Jan 2018 B2
9950405 Deng Apr 2018 B2
9951054 Li et al. Apr 2018 B2
9956314 Skaria et al. May 2018 B2
9993907 Murugesh et al. Jun 2018 B2
10005236 Yudovin-Farber et al. Jun 2018 B2
10016877 Krishnan et al. Jul 2018 B2
10029405 Bajaj et al. Jul 2018 B2
10086500 Orilall et al. Oct 2018 B2
10115568 Kellogg et al. Oct 2018 B2
10220487 Roy et al. Mar 2019 B2
10245704 Eilers et al. Apr 2019 B2
10322491 Orilall et al. Jun 2019 B2
10335994 Napadensky et al. Jul 2019 B2
10347500 Doh et al. Jul 2019 B1
10384330 Bajaj et al. Aug 2019 B2
10391605 Ganapathiappan et al. Aug 2019 B2
10399201 Ganapathiappan et al. Sep 2019 B2
10406599 Ljungblad et al. Sep 2019 B2
10406801 Bell et al. Sep 2019 B2
10456886 Ganapathiappan et al. Oct 2019 B2
10483235 Chiao et al. Nov 2019 B2
10493691 Krishnan et al. Dec 2019 B2
10537974 Bajaj et al. Jan 2020 B2
10580657 Doh et al. Mar 2020 B2
10593574 Fung et al. Mar 2020 B2
10618141 Chockalingam et al. Apr 2020 B2
10675789 Dikovsky et al. Jun 2020 B2
10685862 Rogers Jun 2020 B2
10744714 Lopez et al. Aug 2020 B2
10763081 Cui et al. Sep 2020 B2
10773509 Ng et al. Sep 2020 B2
10821573 Bajaj et al. Nov 2020 B2
10840062 Nguyen et al. Nov 2020 B2
10847347 Noorbakhsh et al. Nov 2020 B2
10875145 Bajaj et al. Dec 2020 B2
10875153 Bajaj et al. Dec 2020 B2
10876073 Ishida Dec 2020 B2
10916408 Dorf et al. Feb 2021 B2
10919123 Hariharan et al. Feb 2021 B2
10923321 Dorf et al. Feb 2021 B2
10953515 Ganapathiappan et al. Mar 2021 B2
20010008830 Tolles et al. Jul 2001 A1
20010019881 Ohmoto et al. Sep 2001 A1
20010020448 Vaartstra et al. Sep 2001 A1
20010029151 Chopra Oct 2001 A1
20010034089 Yamazaki et al. Oct 2001 A1
20010041511 Lack et al. Nov 2001 A1
20010046834 Ramana et al. Nov 2001 A1
20020016139 Hirokawa et al. Feb 2002 A1
20020058396 Roberts et al. May 2002 A1
20020058468 Eppert et al. May 2002 A1
20020069591 Yancey Jun 2002 A1
20020077036 Roberts et al. Jun 2002 A1
20020083577 Suzuki Jul 2002 A1
20020112632 Faibish Aug 2002 A1
20020137450 Osterheld et al. Sep 2002 A1
20020167101 Tochimoto Nov 2002 A1
20020173248 Doan et al. Nov 2002 A1
20030019570 Chen et al. Jan 2003 A1
20030022611 Bartlett et al. Jan 2003 A1
20030056870 Comb et al. Mar 2003 A1
20030113509 Lugg Jun 2003 A1
20030134581 Wang et al. Jul 2003 A1
20030153253 Hanamoto et al. Aug 2003 A1
20030153255 Hasegawa et al. Aug 2003 A1
20030166381 Lee et al. Sep 2003 A1
20030181137 Redeker et al. Sep 2003 A1
20030205325 Boyd et al. Nov 2003 A1
20030220061 Prasad Nov 2003 A1
20040003895 Amano Jan 2004 A1
20040014413 Kawahashi et al. Jan 2004 A1
20040033758 Wiswesser Feb 2004 A1
20040055223 Ono et al. Mar 2004 A1
20040058623 Lin et al. Mar 2004 A1
20040092108 Yajima et al. May 2004 A1
20040106367 Walker et al. Jun 2004 A1
20040126575 Yoshida et al. Jul 2004 A1
20040133298 Toyserkani et al. Jul 2004 A1
20040154533 Agarwal et al. Aug 2004 A1
20040171340 Prasad Sep 2004 A1
20040173946 Pfeifer et al. Sep 2004 A1
20040175451 Maekawa et al. Sep 2004 A1
20040180611 Tajima Sep 2004 A1
20040187714 Napadensky et al. Sep 2004 A1
20040198185 Redeker et al. Oct 2004 A1
20040224616 Shiho et al. Nov 2004 A1
20040266326 Shiho et al. Dec 2004 A1
20050003189 Bredt et al. Jan 2005 A1
20050016868 Basol et al. Jan 2005 A1
20050020082 Vishwanathan et al. Jan 2005 A1
20050032464 Swisher et al. Feb 2005 A1
20050051095 Kikuchi et al. Mar 2005 A1
20050056622 Steger Mar 2005 A1
20050062900 Kim Mar 2005 A1
20050064709 Shimomura et al. Mar 2005 A1
20050086869 Park et al. Apr 2005 A1
20050098540 Prasad May 2005 A1
20050101228 Prasad May 2005 A1
20050110853 Gardner et al. May 2005 A1
20050112998 Matsuo et al. May 2005 A1
20050124262 Manens Jun 2005 A1
20050153634 Prasad et al. Jul 2005 A1
20050171224 Kulp Aug 2005 A1
20050194681 Hu et al. Sep 2005 A1
20050215177 Prasad Sep 2005 A1
20050227590 Sung Oct 2005 A1
20050250431 Shih et al. Nov 2005 A1
20050260928 Huh et al. Nov 2005 A1
20050260939 Andrews et al. Nov 2005 A1
20050261150 Yonker et al. Nov 2005 A1
20050274627 Wylie et al. Dec 2005 A1
20050276967 Prasad Dec 2005 A1
20050284536 Kojima et al. Dec 2005 A1
20060014475 Sekiya Jan 2006 A1
20060019587 Deopura et al. Jan 2006 A1
20060024434 Wang et al. Feb 2006 A1
20060052040 Prasad Mar 2006 A1
20060079159 Naujok et al. Apr 2006 A1
20060096179 Lu et al. May 2006 A1
20060125133 Huh et al. Jun 2006 A1
20060160478 Donohue et al. Jul 2006 A1
20060185256 Nevoret et al. Aug 2006 A1
20060189269 Roy et al. Aug 2006 A1
20060192315 Farr et al. Aug 2006 A1
20060226567 James et al. Oct 2006 A1
20060249369 Marangon et al. Nov 2006 A1
20060252900 Bowman et al. Nov 2006 A1
20060276109 Roy et al. Dec 2006 A1
20070007698 Sano Jan 2007 A1
20070009606 Serdy et al. Jan 2007 A1
20070032170 Halley et al. Feb 2007 A1
20070037486 Kang et al. Feb 2007 A1
20070054599 Taylor et al. Mar 2007 A1
20070093185 Naik Apr 2007 A1
20070117393 Tregub et al. May 2007 A1
20070128874 Shida et al. Jun 2007 A1
20070128991 Yoon et al. Jun 2007 A1
20070149094 Choi Jun 2007 A1
20070149096 Nishimura et al. Jun 2007 A1
20070204420 Hornby et al. Sep 2007 A1
20070212979 Preston Sep 2007 A1
20070221287 Izumoto Sep 2007 A1
20070235133 Benassi Oct 2007 A1
20070235904 Saikin Oct 2007 A1
20070243795 Kobayashi et al. Oct 2007 A1
20070269987 Nakano et al. Nov 2007 A1
20080004743 Goers et al. Jan 2008 A1
20080009228 Nagase et al. Jan 2008 A1
20080057845 Prasad Mar 2008 A1
20080060734 Stehle Mar 2008 A1
20080105818 Cohen May 2008 A1
20080157436 Patel et al. Jul 2008 A1
20080207100 Roy et al. Aug 2008 A1
20080211141 Deopura et al. Sep 2008 A1
20080220702 Feng et al. Sep 2008 A1
20080255823 Grant Oct 2008 A1
20080268760 Bajaj et al. Oct 2008 A1
20080314878 Cai et al. Dec 2008 A1
20090011679 Bajaj et al. Jan 2009 A1
20090053976 Roy et al. Feb 2009 A1
20090053983 Hosaka et al. Feb 2009 A1
20090071938 Dhindsa et al. Mar 2009 A1
20090081927 Grumbine et al. Mar 2009 A1
20090093201 Kazuno et al. Apr 2009 A1
20090094902 Hou Apr 2009 A1
20090104856 Hosaka Apr 2009 A1
20090105363 Napadensky Apr 2009 A1
20090130956 Ohta et al. May 2009 A1
20090133716 Lee May 2009 A1
20090137121 Hsu et al. May 2009 A1
20090169455 Van Aert et al. Jul 2009 A1
20090206065 Kruth et al. Aug 2009 A1
20090223810 Dhindsa et al. Sep 2009 A1
20090253353 Ogawa et al. Oct 2009 A1
20090270019 Bajaj Oct 2009 A1
20090308553 Souzy et al. Dec 2009 A1
20090308739 Riker et al. Dec 2009 A1
20090311955 Kerprich et al. Dec 2009 A1
20090318062 Chiu et al. Dec 2009 A1
20090320379 Jun et al. Dec 2009 A1
20090321979 Hiraide Dec 2009 A1
20100007692 Vanmaele et al. Jan 2010 A1
20100009612 Park et al. Jan 2010 A1
20100011672 Kincaid et al. Jan 2010 A1
20100018648 Collins et al. Jan 2010 A1
20100087128 Nakayama et al. Apr 2010 A1
20100112919 Bonner et al. May 2010 A1
20100120249 Hirose et al. May 2010 A1
20100120343 Kato et al. May 2010 A1
20100130112 Bajaj May 2010 A1
20100140850 Napadensky et al. Jun 2010 A1
20100203815 Bajaj Aug 2010 A1
20100210197 Matsumura et al. Aug 2010 A1
20100221489 Lappalainen et al. Sep 2010 A1
20100255254 Culler et al. Oct 2010 A1
20100323050 Kumagai et al. Dec 2010 A1
20100326957 Maeda et al. Dec 2010 A1
20110011217 Kojima Jan 2011 A1
20110011535 Dhindsa et al. Jan 2011 A1
20110014858 Tsai et al. Jan 2011 A1
20110045199 Cong Feb 2011 A1
20110045744 Feng et al. Feb 2011 A1
20110048772 Han Mar 2011 A1
20110059247 Kuzusako et al. Mar 2011 A1
20110077321 Napadensky Mar 2011 A1
20110130077 Litke et al. Jun 2011 A1
20110171890 Nakayama et al. Jul 2011 A1
20110180952 Napadensky Jul 2011 A1
20110183583 Joseph Jul 2011 A1
20110204538 Drury Aug 2011 A1
20110277789 Benson Nov 2011 A1
20110277877 Stehle Nov 2011 A1
20120000887 Eto et al. Jan 2012 A1
20120094487 Kranz et al. Apr 2012 A1
20120178348 Hsu et al. Jul 2012 A1
20120178845 Napadensky et al. Jul 2012 A1
20120281334 Sasaki et al. Nov 2012 A1
20120302148 Bajaj et al. Nov 2012 A1
20120315830 Joseph et al. Dec 2012 A1
20130012108 Li et al. Jan 2013 A1
20130017769 Kimura Jan 2013 A1
20130019570 Weible Jan 2013 A1
20130048018 Wargo et al. Feb 2013 A1
20130052917 Park Feb 2013 A1
20130055568 Dusel et al. Mar 2013 A1
20130059506 Qian et al. Mar 2013 A1
20130059509 Deopura et al. Mar 2013 A1
20130072025 Singh et al. Mar 2013 A1
20130102231 Joseph et al. Apr 2013 A1
20130107415 Banna et al. May 2013 A1
20130122705 Babu et al. May 2013 A1
20130137350 Allison et al. May 2013 A1
20130139851 Sin et al. Jun 2013 A1
20130154175 Todorow et al. Jun 2013 A1
20130172509 Pawloski et al. Jul 2013 A1
20130183824 Kwon et al. Jul 2013 A1
20130200494 Chen et al. Aug 2013 A1
20130203258 Chen et al. Aug 2013 A1
20130212951 Ahn Aug 2013 A1
20130231032 Swedek et al. Sep 2013 A1
20130247477 Cantrell et al. Sep 2013 A1
20130283700 Bajaj et al. Oct 2013 A1
20130287980 Burdzy et al. Oct 2013 A1
20130288483 Sadjadi et al. Oct 2013 A1
20130307194 Elsey Nov 2013 A1
20130309951 Benvegnu et al. Nov 2013 A1
20130316081 Kovalcik et al. Nov 2013 A1
20130327977 Singh et al. Dec 2013 A1
20130328228 Pettis et al. Dec 2013 A1
20140024216 Stender et al. Jan 2014 A1
20140034229 Xu Feb 2014 A1
20140034239 Yang et al. Feb 2014 A1
20140048970 Batchelder et al. Feb 2014 A1
20140065932 Kazuno et al. Mar 2014 A1
20140069584 Yang et al. Mar 2014 A1
20140109784 Daems et al. Apr 2014 A1
20140117575 Kemperle et al. May 2014 A1
20140127973 Motoshima et al. May 2014 A1
20140163717 Das et al. Jun 2014 A1
20140206268 Lefevre et al. Jul 2014 A1
20140230170 Patel Aug 2014 A1
20140239527 Lee Aug 2014 A1
20140324206 Napadensky Oct 2014 A1
20140364044 Ahn et al. Dec 2014 A1
20140370214 Araki et al. Dec 2014 A1
20140370788 Nair Dec 2014 A1
20150024233 Gunther Jan 2015 A1
20150031781 Landers et al. Jan 2015 A1
20150037601 Blackmore Feb 2015 A1
20150038066 Huang et al. Feb 2015 A1
20150043122 Eto et al. Feb 2015 A1
20150045928 Perez et al. Feb 2015 A1
20150056421 Yudovin-Farber et al. Feb 2015 A1
20150056892 Vacassy et al. Feb 2015 A1
20150056895 Fotou et al. Feb 2015 A1
20150061170 Engel et al. Mar 2015 A1
20150065020 Roy et al. Mar 2015 A1
20150072522 Jung Mar 2015 A1
20150084238 Bonassar et al. Mar 2015 A1
20150089881 Stevenson et al. Apr 2015 A1
20150093977 Deopura et al. Apr 2015 A1
20150114823 Lee et al. Apr 2015 A1
20150115490 Reinarz Apr 2015 A1
20150123298 Napadensky May 2015 A1
20150126099 Krishnan et al. May 2015 A1
20150129798 Napadensky May 2015 A1
20150159046 Dinega et al. Jun 2015 A1
20150174826 Murugesh et al. Jun 2015 A1
20150216790 Feng et al. Aug 2015 A1
20150221520 Singh et al. Aug 2015 A1
20150252202 Nerad Sep 2015 A1
20150375361 Qian et al. Dec 2015 A1
20160052103 Qian et al. Feb 2016 A1
20160068996 Lau et al. Mar 2016 A1
20160073496 Vincent Mar 2016 A1
20160101500 Fung et al. Apr 2016 A1
20160107287 Bajaj et al. Apr 2016 A1
20160107288 Orilall et al. Apr 2016 A1
20160107290 Bajaj et al. Apr 2016 A1
20160107295 Bajaj et al. Apr 2016 A1
20160107381 Krishnan et al. Apr 2016 A1
20160114458 Bajaj et al. Apr 2016 A1
20160136787 Bajaj et al. May 2016 A1
20160176021 Orilall et al. Jun 2016 A1
20160198528 Kitagawa Jul 2016 A1
20160221145 Huang et al. Aug 2016 A1
20160229023 Lugg et al. Aug 2016 A1
20160236279 Ashton et al. Aug 2016 A1
20160252813 Kitson Sep 2016 A1
20160257856 Reiss et al. Sep 2016 A1
20160271869 Van De Vrie et al. Sep 2016 A1
20160279757 Qian et al. Sep 2016 A1
20160322242 Nguyen et al. Nov 2016 A1
20160329244 Chiao et al. Nov 2016 A1
20160346997 Lewis et al. Dec 2016 A1
20160347002 Bajaj et al. Dec 2016 A1
20160354901 Krishnan et al. Dec 2016 A1
20160375546 Pai et al. Dec 2016 A1
20170018411 Sriraman et al. Jan 2017 A1
20170036320 Prasad Feb 2017 A1
20170069462 Kanarik et al. Mar 2017 A1
20170072466 Zehavi et al. Mar 2017 A1
20170100817 Ganapathiappan et al. Apr 2017 A1
20170110335 Yang et al. Apr 2017 A1
20170113355 Genetti et al. Apr 2017 A1
20170115657 Trussell et al. Apr 2017 A1
20170117172 Genetti et al. Apr 2017 A1
20170120416 Chockalingam et al. May 2017 A1
20170133252 Fung et al. May 2017 A1
20170136603 Ganapathiappan et al. May 2017 A1
20170148539 Prestayko et al. May 2017 A1
20170151648 Huang et al. Jun 2017 A1
20170173865 Dikovsky et al. Jun 2017 A1
20170178917 Kamp et al. Jun 2017 A1
20170182629 Lehuu et al. Jun 2017 A1
20170203406 Ganapathiappan et al. Jul 2017 A1
20170203408 Ganapathiappan et al. Jul 2017 A1
20170203409 Lefevre et al. Jul 2017 A1
20170213753 Rogers Jul 2017 A1
20170236688 Caron et al. Aug 2017 A1
20170236741 Angelov et al. Aug 2017 A1
20170236743 Severson et al. Aug 2017 A1
20170239886 Norikane Aug 2017 A1
20170250056 Boswell et al. Aug 2017 A1
20170259396 Yamamura et al. Sep 2017 A1
20170259499 Ng et al. Sep 2017 A1
20170263478 McChesney et al. Sep 2017 A1
20170274498 Oh et al. Sep 2017 A1
20170316935 Tan et al. Nov 2017 A1
20170330734 Lee et al. Nov 2017 A1
20170330786 Genetti et al. Nov 2017 A1
20170334074 Genetti et al. Nov 2017 A1
20170338140 Pape Nov 2017 A1
20170372912 Long et al. Dec 2017 A1
20180025891 Marakhtanov et al. Jan 2018 A1
20180043613 Krishnan et al. Feb 2018 A1
20180100073 Chopra et al. Apr 2018 A1
20180100074 Chopra et al. Apr 2018 A1
20180100075 Chopra et al. Apr 2018 A1
20180158707 Hunter et al. Jun 2018 A1
20180161954 Bajaj et al. Jun 2018 A1
20180229343 Kim et al. Aug 2018 A1
20180236632 Murugesh et al. Aug 2018 A1
20180323042 Wang et al. Nov 2018 A1
20180339397 Redfield Nov 2018 A1
20180339402 Redfield et al. Nov 2018 A1
20180339447 Redfield Nov 2018 A1
20180340104 Hampson et al. Nov 2018 A1
20180366305 Nagami et al. Dec 2018 A1
20180371276 Miyano Dec 2018 A1
20190030678 Kumar et al. Jan 2019 A1
20190039204 Chockalingam et al. Feb 2019 A1
20190047112 Fu et al. Feb 2019 A1
20190198298 Hirose et al. Jun 2019 A1
20190202024 Ganapathiappan et al. Jul 2019 A1
20190218697 Nakayama et al. Jul 2019 A1
20190224809 Ganapathiappan et al. Jul 2019 A1
20190228952 Dorf et al. Jul 2019 A1
20190299357 Orilall et al. Oct 2019 A1
20190299537 McClintock et al. Oct 2019 A1
20190322031 Kritchman Oct 2019 A1
20190337117 Ganapathiappan et al. Nov 2019 A1
20200001433 Bajaj et al. Jan 2020 A1
20200055161 Chockalingham et al. Feb 2020 A1
20200070302 Ganapathiappan et al. Mar 2020 A1
20200101657 Krishnan et al. Apr 2020 A1
20200135517 Fung et al. Apr 2020 A1
20200147750 Bajaj et al. May 2020 A1
20200156311 Rolland et al. May 2020 A1
20200161098 Cui et al. May 2020 A1
20200230781 Chockalingam et al. Jul 2020 A1
20200299834 Bajaj et al. Sep 2020 A1
20200325353 Sridhar et al. Oct 2020 A1
20210013014 Sarode Vishwanath Jan 2021 A1
20210039167 Ashton et al. Feb 2021 A1
20210107116 Bajaj et al. Apr 2021 A1
20210187822 Yudovin-Farber et al. Jun 2021 A1
20210220857 Baker et al. Jul 2021 A1
Foreign Referenced Citations (162)
Number Date Country
1345264 Apr 2002 CN
1484566 Mar 2004 CN
1531473 Sep 2004 CN
1543669 Nov 2004 CN
1569399 Jan 2005 CN
1802237 Jul 2006 CN
1829587 Sep 2006 CN
1851896 Oct 2006 CN
1897226 Jan 2007 CN
101124067 Feb 2008 CN
101166604 Apr 2008 CN
101199994 Jun 2008 CN
101428404 May 2009 CN
101612722 Dec 2009 CN
201483382 May 2010 CN
101642898 Sep 2011 CN
102892553 Jan 2013 CN
202825512 Mar 2013 CN
103153540 Jun 2013 CN
103252729 Aug 2013 CN
103465155 Dec 2013 CN
103561907 Feb 2014 CN
203542340 Apr 2014 CN
104210108 Dec 2014 CN
104385595 Mar 2015 CN
104400998 Mar 2015 CN
104607639 May 2015 CN
103465155 May 2016 CN
19834559 Feb 2000 DE
10314075 Oct 2004 DE
102004042911 Mar 2006 DE
1078717 Jul 2003 EP
1419876 May 2004 EP
1512519 Mar 2005 EP
1661690 May 2006 EP
1747878 Jan 2007 EP
1419876 Apr 2008 EP
2025458 Feb 2009 EP
2025459 Feb 2009 EP
2277686 Jan 2011 EP
2431157 Mar 2012 EP
2463082 Jun 2012 EP
2362592 Nov 2001 GB
H07102724 Nov 1995 JP
H08132342 May 1996 JP
09076353 Mar 1997 JP
H11235656 Aug 1999 JP
11-254542 Sep 1999 JP
H11254542 Sep 1999 JP
11-347761 Dec 1999 JP
H11347761 Dec 1999 JP
2000061817 Feb 2000 JP
2001018163 Jan 2001 JP
2001507634 Jun 2001 JP
2001507997 Jun 2001 JP
200228849 Jan 2002 JP
200267171 Mar 2002 JP
2002151447 May 2002 JP
3324643 Sep 2002 JP
2003303793 Oct 2003 JP
2004235446 Aug 2004 JP
3566430 Sep 2004 JP
2004243518 Sep 2004 JP
2004281685 Oct 2004 JP
2005074614 Mar 2005 JP
3641956 Apr 2005 JP
2005-294661 Oct 2005 JP
3801100 Jul 2006 JP
20060192315 Jul 2006 JP
2006231464 Sep 2006 JP
2006305650 Nov 2006 JP
2007-005612 Jan 2007 JP
2007184638 Jul 2007 JP
2007-235001 Sep 2007 JP
2007281435 Oct 2007 JP
4077192 Apr 2008 JP
2008531306 Aug 2008 JP
2008539093 Nov 2008 JP
2008546167 Dec 2008 JP
2009-101487 May 2009 JP
20100120249 Jun 2010 JP
4512529 Jul 2010 JP
2011067946 Apr 2011 JP
4693024 Jun 2011 JP
4798713 Oct 2011 JP
2012507409 Mar 2012 JP
2012516247 Jul 2012 JP
2013-018056 Jan 2013 JP
5143528 Feb 2013 JP
2013515379 May 2013 JP
2013107254 Jun 2013 JP
5226359 Jul 2013 JP
5248152 Jul 2013 JP
2013169645 Sep 2013 JP
5697889 Apr 2015 JP
2016023209 Feb 2016 JP
5994183 Sep 2016 JP
6422325 Nov 2018 JP
6584895 Oct 2019 JP
10-2000-0075987 Dec 2000 KR
100288410 Jun 2001 KR
2003-0020658 Mar 2003 KR
2005-0052876 Jun 2005 KR
100495404 Jun 2005 KR
10-0606476 Aug 2006 KR
20080038607 May 2008 KR
20100028294 Mar 2010 KR
20130092625 Aug 2013 KR
20130138841 Dec 2013 KR
1020130138841 Dec 2013 KR
10-2015-0047628 May 2015 KR
519506 Feb 2003 TW
200528529 Sep 2005 TW
290576 Dec 2007 TW
200909134 Mar 2009 TW
200924907 Jun 2009 TW
200927382 Jul 2009 TW
201016387 May 2010 TW
374792 Oct 2012 TW
388398 Mar 2013 TW
201350265 Dec 2013 TW
9830356 Jul 1998 WO
1998047662 Oct 1998 WO
2000002707 Jan 2000 WO
2000002708 Jan 2000 WO
2001043920 Jun 2001 WO
2001053040 Jul 2001 WO
0164396 Sep 2001 WO
2001083167 Nov 2001 WO
0224415 Mar 2002 WO
2002070200 Sep 2002 WO
0238688 Oct 2002 WO
03089702 Oct 2003 WO
03103959 Dec 2003 WO
2003099518 Dec 2003 WO
2004037490 May 2004 WO
2005000526 Jan 2005 WO
2005100497 Oct 2005 WO
2006003697 Jan 2006 WO
2007001699 Jan 2007 WO
2007024464 Mar 2007 WO
2007055678 May 2007 WO
2007055901 May 2007 WO
2009026776 Mar 2009 WO
2009158665 Dec 2009 WO
2010066448 Jun 2010 WO
2010123744 Oct 2010 WO
2011088057 Jul 2011 WO
2011082155 Jul 2011 WO
2012173885 Dec 2012 WO
2012173885 May 2013 WO
2013128452 Sep 2013 WO
2013162856 Oct 2013 WO
2014039378 Mar 2014 WO
2014095200 Jun 2014 WO
2014141276 Sep 2014 WO
2015040433 Mar 2015 WO
2015055550 Apr 2015 WO
2015111366 Jul 2015 WO
2015120430 Aug 2015 WO
2015118552 Aug 2015 WO
20150161210 Oct 2015 WO
Non-Patent Literature Citations (71)
Entry
Decision to Grant (and English Translation) for JP Patent Application No. 2017-520353, dated Aug. 19, 2020, 5 pages.
Office Action from Korean Patent Application No. 10-2022-7000942 dated Mar. 28, 2022.
Taiwan Office Action dated Apr. 15, 2021 for Taiwan Patent Application No. 108128180.
Chinese Office Action dated Mar. 8, 2021 for Chinese Patent Application No. 201910517080.0.
Notice of Allowance for Korean Application No. 10-2017-7013107 dated Dec. 4, 2021.
Korean Office Action issued to Patent Application No. 10-2022-7035681 dated Feb. 2, 2023.
EPO Office Action dated Jun. 19, 2020, for European Application No. 15850855.6.
Chinese Office Action dated Sep. 8, 2020 for Chinese Patent Application No. 201910517080.0.
C. Wong. “Damping Associated with Incipient Melting in Aluminum-Indium Alloys”, David Taylor Research Center—SME 89-99. Jan. 1990.
Tammy Hickey et al. “Internal Friction and Modules Studies on Austempered Ductile Iron”, Technical Report ARCCB-TR-98001. Jan. 1996. 24 pages.
Byoung-Ho Kwon et al. “Dishing and Erosion in STI CMP”. System IC R&D Center, Hyundai Electronics Industries Co. Ltd. 1999 IEEE. 3 pages.
S. Raghavan et al. “Chemical Mechanical Planarization in Integrated Circuit Device Manufacturing”. vol. 98-7. 1998. 19 pages.
John J. Aklonis et al. “Introduction to Polymer Viscoelasticity”. Second Edition. 1983. 6 pages.
The Dow Chemical Company—“Specialty Elastomers for Automotive TPO Compounds” brochure, Nov. 2006, 8 pages.
The Dow Chemical Company —“Dow VLDPE DFDB-1085 NT, Very Low Density Polyethylene Resin” Technical Data, UL Prospector, Oct. 2003, 2 pages.
Lubrizol Advanced Materials, Inc.—“Lubrizol Engineered Polymers, Estane 58144 TPU” Technical Data, Feb. 2014, 2 pages.
Sekisui Voltek, LLC—“Volara Type EO” Technical Data, Jan. 2010, 2 pages.
Rogers Corporation, High Performance Foams Division, PORON Microcellular Urethanes—Product Availability Booklet, May 1, 2015, 11 pages.
Andrews, Rodney J., et al.—“Glass Transition Temperatures of Polymers,” Polymer Handbook, Fourth Edition, J. Brandrup et al., Editors, A Wiley Interscience Publication, John Wiley & Sons, Inc., 1999, VI / 193-198.
Crow—“Glass Transition Temperature,” webpage, Polymer Properties Database, http://polymerdatabase.com/polymer%20physics/GlassTransition.html, 2015, printed Apr. 10, 2019, 2 pages.
Crow—“Glass Transition Temperatures,” webpage, Polymer Properties Database, http://polymerdatabase.com/polymer%20physics/Polymer%20Tg%20C.html, 2015, printed Apr. 10, 2019, 6 pages.
HUPC—“Dipropylene Glycol Diacrylate (DPGDA)” webpage, CAS No. 57472-68-1_Radiation, http://www.union-pigment.com/china/radiation-curable-57472.html, printed Apr. 8, 2019, 2 pages.
Polysciences, Inc.—“Monomers Product Guide,” 2012, 16 pages.
Whisnaut, David—“Polymer Chemistry: The Glass Transition” webpage, Engineering Libre Texts, https://eng.libretexts.org/Bookshelves/Materials_Schience?Supplemental_Modules_Materia . . . , printed Apr. 10, 2019, 2 pages.
Sigma-Aldrich—“Thermal Transitions of Homopolymers: Glass Transition & Melting Point” webpage, https://www.sigmaaldrich.com/technical-documents/articles/materials-science/polymer-scie . . . , printed Apr. 8, 2019, 3 pages.
Moylan, John—“Considerations for Measuring Glass Transition Temperature,” webpage on Element Materials Technology's website, https://www.element.com/nucleus/2017/08/15/18/45/considerations-for-measuring-glass-transition-temperature, Feb. 19, 2019, 8 pages.
ASTM International—“Standard Test Method for Assignment of the Glass Transition Temperature by Dynamic Mechanical Analysis,” standard issued under Designation E1640, current edition approved Aug. 1, 2013, 6 pages.
Wikipedia—“Contact angle” webpage, https://en.wikipedia.org/wiki/Contact_angle, last edited Dec. 14, 2019, 9 pages.
ASTM International—“Standard Terminology for Additive Manufacturing Technologies,” ASTM Designation: F2792-12a, copyright dated Sep. 9, 2013, pp. 1-3.
Merriam-Webster Dictionary—“Droplet,” https://www.merriam-webster.com/dictionary/droplet, accessed Feb. 24, 2020, 8 pages.
Shahrubudin, N., et al.—“An Overview on 3D Printing Technology: Technological, Materials, and Applications,” 2nd International Conference on Sustainable Materials Processing and Manufacturing (SMPM 2019), Procedia Manufacturing, 35 (2019), published by Elsevier B.V., pp. 1286-1296.
Wikipedia—“Drop (liquid),” https://en.wikipedia.org/wiki/Drop_(liquid), last edited Feb. 12, 2020, accessed Feb. 24, 2020, 5 pages.
J.-G. Park, et al., Post-CMP Cleaning: Interaction between Particles and Surfaces, International Conference on Planarization/CMP Technology, Oct. 25-27, 2007, VDE Verlag CMBH, Berlin-Offenbach, 6 pp.
Pan, GuoShun et al.—“Preparation of silane modified SiO2 abrasive particles and their Chemical Mechanical Polishing (CMP) performances,” Wear 273 (2011), pp. 100-104.
Epoxy Technology Inc.—“Tech Tip 23: Tg—Glass Transition Temperature for Epoxies” brochure, date unknown, 2 pages.
Rao, Sunil M., The Effectiveness of Silane and Siloxane Treatments on the Superhydrophobicity and Icephobicity of Concrete Surfaces, Rao, Phd Thesis, 1-118.
A Breakthrough Method for the Effective Conditioning of PVA Brush Used for Post-CMP Process, Lee et al., ECS Journal of Solid State Science and Technology 8, p. 307-p. 312 (2019), Published Jun. 5, 2019, 6 pages.
Influence of post-CMP cleaning on Cu interconnects and TDDB reliability, Noguchi et al., IEEE Transactions on Electron Devices 52, 934-941 (2005), Published Apr. 25, 2005, 8 pages.
Arkema, “Liquid Resins for UV Curling”, N3XTDIMENSION. Sartomer's Custom Liquid Resin Systems. 3D-arkema.com.
GPS Safety Summary, “Tripropyleneglycol diacrylate”, (TPGDA—SR 306)—Mar. 11, 2013.
Shyam Dev Maurya et al. “A Review on Acrylate-Terminated Urethane Oligomers and Polymers: Synthesis and Applications”, Polymer-Plastics Technology and Engineering. ISSN:0360-2559 (Print) 1525-6111 (Online) Journal homepage: https://www.tandfonline.com/loi/lpte20.
UV/EB Curable Resins. Product Guide—Americas. www.allnex.com.
Office Action for Korean Application No. 10-2017-7013107 dated Jun. 28, 2021.
Communication pursuant to Article 94(3) EPC for European Application No. 15850855.6 dated Sep. 22, 2021.
Wikipedia—“Cross-link” webpage at <https://en.wikipedia.org/wiki/Cross-link>, printed Mar. 8, 2019, 8 pages.
Plastics in Action; 3-D Printing Speeds Prototype Development dated May/Jun. 1998; 2 total pages.
Wikipedia [online]; 3D Printing; 2013; 17 total pages.
3D Printing: The Next Industrial Revolution: Christopher Barnatt Publisher: CreateSpace Independent Publishing Platform (May 4, 2013) Language: English, ISBN-10: 148418176X ISBN-13: 978-1484181768.
Rodel. Rodel IC1000 CMP Pad. 1999. 2 pages.
Byoung-Ho Kwon et al. “Dishing and Ersosion in STI CMP”. System IC R&D Center, Hyundai Electronics Industries Co. Ltd. 1999 IEEE. 3 pages.
S. Raghavan et al. “Chemical Mechanical Planariarization in Integrated Circuit Device Manufacturing”. vol. 98-7. 1998. 19 pages.
Rajeev Bajaj et al. “Effect of Polishing Pad Material Properties on Chemical Mechanical Polishing (CMP) Processes”. 1994. 8 pages.
Rodel. Rodel IC1010. 1998. 2 pages.
Peter Freeman et al. “A Study of the Variation of Physical Properties in Random Lots of Urethane Polishing Pads for CMP”. A RODEL Publication. vol. 2, Issue 6. Jun. 1996. 8 Pages.
Weidan Li et al. “The Effect of the Polishing Pad Treatments on the Chemical-Mechanical Polishing of SiO2 Films”, Thin Solid Films 270 (1995). 6 pages.
Antje M.J. Van Den Berg, “Inkjet Printing of Polyurethane Colloidal Suspensions”, www.rsc.org/softmatter. Jul. 13, 2006.
Peter Krober et al. “Reactive Inkjet Printing of Polyurethanes”, www.rsc.org/materials. Journal of Materials Chemistry. Jan. 6, 2009.
Yu-Lim Jun et al. “Slicing Bitmap Generation and Patterning Technique a SFF System Using UV-Resin”, International Conference on Control, Automation and Systems 2007. 5 Pages.
H. Yang. “High Viscosity Jetting System for 3D Reactive Inkjet Printing”, Additive Manufacturing and 3D Printing Group, University of Nottingham. 9 pages.
I Hermant et al. “A Comparative Study of Polyurethane-Poly(Methyl Methacrylate) Interpenetrating and Semi-1 Interprenetrating Polymer Networks”, vol. 20, No. 1. pp. 85-89, 1984.
Lee M. Cook. “CMP Consumables II: Pad” Chapter 6. Semiconductors and Semimetals, vol. 63. Published 1999. Chemical Mechanical Polishing in Silicon Processing. ISBN: 978-0-12-752172-5.
European Search Report for Application No. 15850855.6.
Taiwan Office Action for Application No. 104133737 dated Nov. 22, 2018.
Chinese Office Action for Application No. 201580056366.3 dated Sep. 28, 2018.
Notice of Allowance for Chinese Application No. 201580056366.3 dated May 9, 2019.
Japanese Office Action for Application No. JP 2017-520353 dated Jul. 23, 2019.
Taiwan Office Action dated Jan. 6, 2020 for Taiwan Patent Application No. 108128180.
Japanese Office Action dated Mar. 3, 2020, for Japanese Patent Application No. 2017520353.
Taiwan Office Action dated May 26, 2020 for Taiwan Patent Application No. 108128180.
EPO Office Action dated Mar. 16, 2021, for European Application No. 15850855.6.
European Search Report dated Oct. 18, 2023 for Application No. 23182827.8.
Related Publications (1)
Number Date Country
20200101657 A1 Apr 2020 US
Provisional Applications (1)
Number Date Country
62065533 Oct 2014 US
Continuations (2)
Number Date Country
Parent 15722810 Oct 2017 US
Child 16700062 US
Parent 14863409 Sep 2015 US
Child 15722810 US