Claims
- 1. A polishing pad comprising:a hydrophilic polishing layer with a polishing surface, said polishing layer comprising a polishing material having: i. a density greater than 0.5 g/cm3; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter; iii. a tensile modulus of 0.02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30° C. to tensile modulus at 600° C. of 1.0 to 2.5; v. a hardness of 25 to 80 Shore D; vi. a yield stress of 300-6000 psi; vii. a tensile strength of 1000 to 15,000 psi; and viii. an elongation to break less than or equal to 500%; said polishing material comprising a polymer that is formed from at least one moiety selected from the group consisting of: 1. a urethane; 2. a carbonate; 3. an amide; 4. an ester; 5. an ether; 6. an acrylate; 7. a methacrylate; 8. an acrylic acid; 9. a methacrylic acid; 10. a sulphone; 11. an acrylamide; 12. a halide; and 13. a hydroxide; wherein the polishing layer is formed by sintering.
- 2. A polishing pad in accordance with claim 1 wherein the sintered polishing material comprises a rigid phase, said rigid phase being without an intrinsic ability to absorb slurry particles or to transport slurry particles.
- 3. A polishing pad in accordance with claim 2 wherein the polishing layer is formed by molding.
- 4. A polishing pad in accordance with claim 3 wherein the polishing surface has a micro-texture of indentations or micro-asperities of which an average depth is in the range of less than 50 microns.
- 5. A polishing pad in accordance with claim 4 wherein greater than 0.1 percent of the area of the polishing surface is covered by said micro-texture of indentations or micro-asperities.
- 6. A polishing pad in accordance with claim 3 wherein the polishing layer consists essentially of a two-phase polyurethane.
- 7. A polishing pad in accordance with claim 1 wherein the polishing surface has, on average, less than 2 observable macro-defects per square millimeter of polishing surface when viewed at a magnification of 1000×.
- 8. A polishing pad in accordance with claim 1 wherein the polishing material further comprises a plurality of soft domains and a plurality of hard domains, the hard domains and soft domains having an average size of less than 100 microns.
- 9. A polishing pad in accordance with claim 8 wherein the hard domains and the soft domains are produced by a phase separation as the polishing layer is formed, the polishing layer comprising a polymer having a plurality of hard segments and a plurality of soft segments.
- 10. A polishing pad in accordance with claim 1 wherein the polishing layer is formed in a mold by a sintering process.
- 11. A polishing pad in accordance with claim 10 wherein said mold has a surface texture for generating micro-texture or micro-asperities upon the polishing surface as the polishing material solidifies in the mold.
- 12. A polishing pad in accordance with claim 10 wherein a solid organic material is applied to a mold surface prior to molding of the polishing layer.
- 13. A polishing pad in accordance with claim 12 wherein the solid organic material is a fluorocarbon which is carried to the mold surface by a spray propellant which is free of volatile organic solvent.
- 14. A polishing pad in accordance with claim 12 wherein the solid organic material is carried by a liquid.
- 15. A polishing pad in accordance with claim 14 wherein the solid organic material is a wax and the liquid is a non-polar organic solvent.
- 16. A polishing pad in accordance with claim 10 wherein the mold has an average aspect ratio of at least 400.
- 17. A polishing pad in accordance with claim 1 wherein the polishing layer further comprises abrasive particles.
- 18. A polishing pad in accordance with claim 1 wherein the polishing layer consists essentially of a material selected from the group consisting of: polymethyl methacrylate, polyvinyl chloride, polysulfone, nylon, polycarbonate, polyurethane, ethylene copolymer, polyether sulfone, polyether imide, polyethylene imine, polyketone and combinations thereof.
- 19. A polishing pad for use in chemical mechanical polishing, comprising:a polishing layer with a polishing surface having an incorporated macro-texture that is continuous or discontinuous consisting essentially of a hydrophilic polishing layer, said polishing layer further comprising a polishing material having: i. a density greater than 0.5 g/cm3; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter; iii. a tensile modulus of 0.02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30° C. to tensile modulus at 60° C. of 1.0 to 2.5; v. a hardness of 25 to 80 Shore D; vi. a yield stress of 300-6000 psi; vii. a tensile strength of 1000 to 15,000 psi; and viii. an elongation to break less than or equal to 500%, said polishing material comprising a polymer reacted from at least one moiety selected from the group consisting of: 1. a urethane; 2. a carbonate; 3. an amide; 4. an ester; 5. an ether; 6. an acrylate; 7. a methacrylate; 8. an acrylic acid; 9. a methacrylic acid; 10. a sulphone; 11. an acrylamide; 12. a halide; and 13. a hydroxide; wherein the polishing layer is formed by sintering; with said macro-texture being provided by one or more grooves; said groove having: i. a width of at least 0.01 millimeters ii. a depth of at least 0.01 millimeters, and iii. a length of at least 0.1 millimeters; wherein any horizontal portion of the polishing layer has less than 10 macro-defects per millimeter of horizontal length; said macro-defects being equal to or greater than 25 microns in any dimension wherein said dimension refers to either width, height or length of the macro-defect.
- 20. A polishing pad in accordance with claim 19 wherein the polishing surface has a micro-texture of indentations or micro-asperities of which an average depth is in the range of less than 50 microns.
- 21. A polishing pad in accordance with claim 20 wherein greater than 0.1 percent of the area of the polishing surface is covered by said micro-texture of indentations or micro-asperities.
- 22. A method of planarizing a silicon, silicon dioxide or metal substrate, comprising:a) providing a polishing pad comprising a hydrophilic polishing layer with a polishing surface, said polishing layer comprising a polishing material having: i. a density greater than 0.5 gm/cm3; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter; iii. a tensile modulus of 0.02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30° C. to tensile modulus at 60° C. of 1.0 to 2.5; v. a hardness of 25 to 80 Shore D; vi. a yield stress of 300-6000 psi; vii. a tensile strength of 1000 to 15,000 psi; and viii. an elongation to break less than or equal to 500%, said polishing material comprising a polymer formed from at least one moiety selected from the group consisting of: 1. a urethane; 2. a carbonate; 3. an amide; 4. an ester; 5. an ether; 6. an acrylate; 7. a methacrylate; 8. an acrylic acid; 9. a methacrylic acid; 10. a sulphone; 11. an acrylamide; 12. a halide; and 13. a hydroxide; wherein the polishing layer is formed by sintering; andb) using a pressure greater than 0.1 kilograms per square meter between the substrate and said polishing surface of said polishing pad.
- 23. A method in accordance with claim 22 wherein the method step comprises using said polishing pad having a polishing surface with a micro-texture of indentations or micro-asperities of which an average depth is in the range of less than 50 microns.
- 24. A method in accordance with claim 23, further comprising: periodically renewing the micro-texture or micro-asperities during polishing of the substrate by moving an abrasive medium against and relative to the polishing surface of the polishing pad.
- 25. A method in accordance with claim 22 wherein the polishing surface is conditioned to create a micro-texture of indentations or micro-asperities by moving an abrasive medium against the polishing surface of the polishing pad, said abrasive medium carrying a plurality of rigid particles.
- 26. A method in accordance with claim 22 wherein the method step comprises using said polishing pad with the polymeric material being solidified two-phase polyurethane.
- 27. A method in accordance with claim 26 wherein the polishing layer is formed in a mold by a sintering process.
- 28. A method in accordance with claim 22 wherein the method polishes a metal selected from the group consisting of copper, tungsten, and aluminum.
Parent Case Info
This application is a continuation of U.S. application Ser. No. 09/465,566 filed on Dec. 17, 1999, now U.S. Pat. No. 6,217,434, which is a continuation of U.S. application Ser. No. 09/054,948 filed on Apr. 3, 1998 now U.S. Pat. No. 6,022,268 which claims the benefit of U.S. Provisional Application Ser. No. 60/043,404 filed on April 4, 1997 and U.S. Provisional Application Serial No. 60/049,440 filed on Jun. 12, 1997.
US Referenced Citations (12)
Provisional Applications (2)
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Number |
Date |
Country |
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60/043404 |
Apr 1997 |
US |
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60/049440 |
Jun 1997 |
US |
Continuations (2)
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Number |
Date |
Country |
Parent |
09/465566 |
Dec 1999 |
US |
Child |
09/717470 |
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US |
Parent |
09/054948 |
Apr 1998 |
US |
Child |
09/465566 |
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US |