Claims
- 1. A polymeric compound for photoresist, comprising a monomer unit represented by following Formula (I) and a monomer unit represented by following Formula (IIIf):
- 2. The polymeric compound for photoresist according to claim 1, comprising the monomer unit represented by Formula (I) and (IIIf) and at least one selected from monomer units represented by following Formulae (IIa) to (IIg): wherein R1 is a hydrogen atom or a methyl group; R2 and R3 are the same or different and are each a hydrocarbon group having from 1 to 8 carbon atoms; R4, R5 and R6 are the same or different and are each a hydrogen atom, a hydroxyl group or a methyl group; R7 and R8 are the same or different and are each a hydrogen atom, a hydroxyl group or a —COOR9 group, where R9 is a t-butyl group, a 2-tetrahydrofuranyl group, a 2-tetrahydropyranyl group or an 2-oxepanyl group; R10 and R11 are the same or different and are each a hydrogen atom, a hydroxyl group or an oxo group; R12 is a hydrocarbon group having a tertiary carbon atom at a bonding site with an oxygen atom indicated in the Formula; R13, R14 and R15 are the same or different and are each hydrogen atom or a methyl group; R16 is a t-butyl group, a 2-tetrahydrofuranyl group, a 2-tetrahydropyranyl group or an 2-oxepanyl group; and n denotes an integer from 1 to 3.
- 3. The polymeric compound for photoresist according to claim 1 or 2, further comprising it least one selected from monomer units represented by following Formulae (IIIa) to (IIIe) and (IIIg): wherein R1 is a hydrogen atom or a methyl group; R17 and R18 are the same or different and are each a hydrogen atom, a hydroxyl group or a carboxyl group; R19 is a hydroxyl group, an oxo group or a carboxyl group; R20, R21, R22, R23 and R24 are the same or different and are each a hydrogen atom is a hydrogen atom or a methyl group; R25 is a hydrogen atom or a methyl group; R26 is a tricyclo[5.2.1.02,6]decylmethyl group, a tetracyclo[4.4.0.12,5.17,10]dodecylmethyl group, a norbornyl group, an isobornyl group or a 2-norbornylmethyl group; and R27 is a substituent of R26 and is a hydrogen atom, a hydroxyl group, a hydroxymethyl group, a carboxyl group or a —COOR28 group, where R28 is a t-butyl group, a 2-tetrahydrofuranyl group, a 2-tetrahydropyranyl group or an 2-oxepanyl group.
- 4. A resin composition for photoresist, comprising the polymeric compound for photoresist as claimed in claim 1 and a light-activatable acid generator.
- 5. A method of manufacturing a semiconductor, the method comprising the steps of applying the resin composition for photoresist as claimed in claim 4 onto a base or substrate to thereby form a resist film; and subjecting the resist film to exposure and development to thereby produce a pattern.
- 6. The polymer compound for photoresist according to claim 1, wherein the monomer unit of Formula (I) is in a concentration of about 1% to about 90% by mol relative to the total monomer units constituting the polymer.
- 7. The polymeric compound for photoresist according to claim 2, wherein the concentration of the monomer unit of Formula (IIa) to (IIg) is about 10% to about 90% by mol relative to the total monomer units constituting the polymer.
- 8. The polymeric compound for photoresist according to claim 1, wherein the concentration of the monomer unit of Formula (IIIf) is about 1% to about 70% by mol relative to the total monomer units constituting the polymer.
- 9. The polymeric compound for photoresist according to claim 3, wherein the monomer units represented by Formula (IIIa) to (IIIe) and (IIIg) is from about 1% to about 70% by mol relative to the total monomer units constituting the polymer.
- 10. The polymeric compound for photoresist according to claim 1, wherein the polymeric compound has a weight average molecular weight of about 5,000 to about 50,000.
- 11. The polymeric compound for photoresist according to claim 1, wherein the polymeric compound has a weight average molecular weight of from about 7,000 to about 20,000.
- 12. The polymeric compound for photoresist according to claim 1, wherein the polymeric compound has a molecular weight distribution of from about 1.8 to about 3.5.
- 13. A resin composition for photoresist, comprising the polymeric compound for photoresist as claimed in claim 11, and a light-activatable acid generator.
- 14. A method of manufacturing a semiconductor, the method comprising the steps of applying the resin composition for photoresist as claimed in claim 13 onto a base or substrate to thereby form a resist film; and subjecting the resist film to exposure and development to thereby produce a pattern.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2000-024527 |
Feb 2000 |
JP |
|
Parent Case Info
This application is the national phase under 35 U.S.C. §371 of PCT International Application No. PCT/JP01/00515 which has an International filing date of Jan. 26, 2001, which designated the United States of America.
PCT Information
Filing Document |
Filing Date |
Country |
Kind |
PCT/JP01/00515 |
|
WO |
00 |
Publishing Document |
Publishing Date |
Country |
Kind |
WO01/57597 |
9/8/2001 |
WO |
A |
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May 2000 |
A |
6103845 |
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Aug 2000 |
A |
6114084 |
Kang et al. |
Sep 2000 |
A |
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