Claims
- 1. A power transistor having at least one trench transistor cell in a semiconductor body, comprising:
a drain zone, a drift zone, a channel zone, and a source zone formed in each case successively and substantially horizontally in the semiconductor body; the semiconductor body having a trench formed therein with a base and a defined body height opposite a pn junction between said drift zone and said channel zone; a first dielectric layer cladding said trench substantially to said body height, and a gate oxide cladding said trench between said body zone and a semiconductor body surface; and a field electrode extending in said trench substantially from said trench base to an upper edge of said first dielectric layer; a gate electrode disposed substantially between said body height and the semiconductor body surface, said gate electrode having a lower edge with a profile at least partly different from horizontal; and a second dielectric layer formed between said gate electrode and said field electrode.
- 2. The power transistor according to claim 1, wherein said profile of said lower edge of said gate electrode is at least partly angled relative to the semiconductor body surface.
- 3. The power transistor according to claim 2, wherein said profile has a falling angle between two trenches.
- 4. The power transistor according to claim 1, wherein said profile of said lower edge of said gate electrode is formed with at least one outward bulge.
- 5. The power transistor according to claim 1, wherein said field electrode overlaps said gate electrode.
- 6. The power transistor according to claim 5, wherein at least one of said field electrode and said gate electrode intersects and/or passes through a plane defined by said pn junction between said drift zone and said channel zone.
- 7. The power transistor according to claim 1, wherein said field electrode is connected to be at a fixed potential.
- 8. The power transistor according to claim 7, wherein said field electrode is connected to be at the source potential.
Priority Claims (3)
Number |
Date |
Country |
Kind |
102 12 148.6 |
Mar 2002 |
DE |
|
102 34 996.7 |
Jul 2002 |
DE |
|
103 41 592.0 |
Sep 2003 |
DE |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation-in-part of our copending application Ser. No. 10/392,024, filed Mar. 19, 2003. The earlier application is herewith incorporated by reference in its entirety.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
10392024 |
Mar 2003 |
US |
Child |
10666228 |
Sep 2003 |
US |