with trench gate electrode

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CPC
H01L29/7813

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7813with trench gate electrode

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide device with a stripe-shaped trench gate structure
- Patent number 12,266,694
- Issue date Apr 1, 2025
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled switching device with resistive path
- Patent number 12,266,680
- Issue date Apr 1, 2025
- Infineon Technologies Dresden GmbH & Co. KG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of power devices having increased cross over current
- Patent number 12,266,691
- Issue date Apr 1, 2025
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power converter
- Patent number 12,266,706
- Issue date Apr 1, 2025
- Mitsubishi Electric Corporation
- Yutaka Fukui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFETs with improved performance structures
- Patent number 12,266,726
- Issue date Apr 1, 2025
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,217
- Issue date Mar 25, 2025
- Fuji Electric Co., Ltd.
- Masakazu Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 12,261,218
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,255,254
- Issue date Mar 18, 2025
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,255,228
- Issue date Mar 18, 2025
- Fuji Electric Co., Ltd.
- Masanobu Iwaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing switching device
- Patent number 12,255,243
- Issue date Mar 18, 2025
- Denso Corporation
- Eiji Kagoshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method for fabricating the same
- Patent number 12,249,620
- Issue date Mar 11, 2025
- Hyundai Motor Company
- Jong Seok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical insulated gate power switch with isolated base contact reg...
- Patent number 12,249,642
- Issue date Mar 11, 2025
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Power semiconductor device
- Patent number 12,249,551
- Issue date Mar 11, 2025
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method for manufacturing field-effect t...
- Patent number 12,249,633
- Issue date Mar 11, 2025
- Will Semiconductor (Shanghai) Co. Ltd.
- Nobuyuki Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with overlapping electric fiel...
- Patent number 12,243,910
- Issue date Mar 4, 2025
- Denso Corporation
- Shinichirou Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for auto-aligned manufacturing of a VDMOS transistor, and au...
- Patent number 12,243,922
- Issue date Mar 4, 2025
- STMicroelectronics S.r.l.
- Vincenzo Enea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned semiconductor device contacts having widths less than...
- Patent number 12,243,778
- Issue date Mar 4, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Mitsuru Soma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate silicon carbide MOSFET device and fabrication method th...
- Patent number 12,237,410
- Issue date Feb 25, 2025
- JSAB TECHNOLOGIES (SHENZHEN) LTD.
- Yong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display driver semiconductor device and method for manufacturing th...
- Patent number 12,237,337
- Issue date Feb 25, 2025
- SK keyfoundry Inc.
- Boseok Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having increased forward biased safe operating area using so...
- Patent number 12,230,686
- Issue date Feb 18, 2025
- Infineon Technologies Americas Corp.
- Praveen Shenoy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,627
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Isao Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and chip singulation method
- Patent number 12,232,337
- Issue date Feb 18, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yoshihiro Matsushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFETs with improved trench terminations and...
- Patent number 12,230,705
- Issue date Feb 18, 2025
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device
- Patent number 12,230,703
- Issue date Feb 18, 2025
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Yi Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,704
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a cell field and method of fabricating a g...
- Patent number 12,230,706
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,224,341
- Issue date Feb 11, 2025
- Hyundai Motor Company
- NackYong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with gate-source ESD diode structure
- Patent number 12,224,311
- Issue date Feb 11, 2025
- Diodes Incorporated
- Wan-Yu Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,224,320
- Issue date Feb 11, 2025
- Fuji Electric Co., Ltd.
- Yoshihito Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Manufacturing MOSFETs
- Publication number 20250072029
- Publication date Feb 27, 2025
- NEXPERIA B.V.
- Deepak Chandra Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20250072046
- Publication date Feb 27, 2025
- Mitsubishi Electric Corporation
- Tetsuo TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET and manufacturing method thereof
- Publication number 20250072047
- Publication date Feb 27, 2025
- Hangzhou Silicon-Magic Semiconductor Technology Co.,Ltd
- Yanggang OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS
- Publication number 20250072085
- Publication date Feb 27, 2025
- NEXPERIA B.V.
- Chih-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072084
- Publication date Feb 27, 2025
- Kabushiki Kaisha Toshiba
- Takuo KIKUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET DEVICE WITH PROTECTION GATE STRUCTURE AND A METHOD OF...
- Publication number 20250072021
- Publication date Feb 27, 2025
- Unity Power Technology Limited
- Wai Tien CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALL...
- Publication number 20250072044
- Publication date Feb 27, 2025
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW THRESHOLD HIGH DENSITY TRENCH MOSFET
- Publication number 20250072045
- Publication date Feb 27, 2025
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250069997
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Kazuki OKUYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE
- Publication number 20250063775
- Publication date Feb 20, 2025
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC TRENCH DEVICES HAVING N-TYPE GATE OXIDE SHIELD ZONES
- Publication number 20250063774
- Publication date Feb 20, 2025
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063794
- Publication date Feb 20, 2025
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250063796
- Publication date Feb 20, 2025
- Kabushiki Kaisha Toshiba
- Hiroki NEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD
- Publication number 20250056846
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...
- Publication number 20250056830
- Publication date Feb 13, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250056836
- Publication date Feb 13, 2025
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SENSE TRANSISTOR WITH LOWER SPREADING RESISTANCE
- Publication number 20250048721
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Eung Jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250046758
- Publication date Feb 6, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Takashi OHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20250048673
- Publication date Feb 6, 2025
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jian Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048674
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METH...
- Publication number 20250048700
- Publication date Feb 6, 2025
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048708
- Publication date Feb 6, 2025
- Kabushiki Kaisha Toshiba
- Taichi FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250046612
- Publication date Feb 6, 2025
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250046759
- Publication date Feb 6, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Takeshi IMAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048685
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Yuji OSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040223
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Masatsugu YUTANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250040205
- Publication date Jan 30, 2025
- DENSO CORPORATION
- HIDEFUMI TAKAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031396
- Publication date Jan 23, 2025
- Mitsubishi Electric Corporation
- Kazuya KONISHI
- H01 - BASIC ELECTRIC ELEMENTS

with trench gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon carbide device with a stripe-shaped trench gate structure

Voltage-controlled switching device with resistive path

Manufacture of power devices having increased cross over current

Semiconductor device and power converter

Shielded gate trench MOSFETs with improved performance structures

Semiconductor device

Semiconductor structure and method of forming the same

Semiconductor device

Silicon carbide semiconductor device and method of manufacturing si...

Method for manufacturing switching device

Power semiconductor device and method for fabricating the same

Vertical insulated gate power switch with isolated base contact reg...

Semiconductor device, method of manufacturing the same and electron...

Power semiconductor device

Field-effect transistor and method for manufacturing field-effect t...

Silicon carbide semiconductor device with overlapping electric fiel...

Method for auto-aligned manufacturing of a VDMOS transistor, and au...

Self-aligned semiconductor device contacts having widths less than...

Trench gate silicon carbide MOSFET device and fabrication method th...

Display driver semiconductor device and method for manufacturing th...

Device having increased forward biased safe operating area using so...

Semiconductor device

Semiconductor device and chip singulation method

Shielded gate trench MOSFETs with improved trench terminations and...

Semiconductor power device

Semiconductor device

Transistor device having a cell field and method of fabricating a g...

Semiconductor device and method of manufacturing the same

Power MOSFET with gate-source ESD diode structure

Silicon carbide semiconductor device and method of manufacturing si...

Patents Applicationslast 30 patents

Method of Manufacturing MOSFETs

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...

Trench MOSFET and manufacturing method thereof

POWER SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS

SEMICONDUCTOR DEVICE

TRENCH MOSFET DEVICE WITH PROTECTION GATE STRUCTURE AND A METHOD OF...

POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALL...

LOW THRESHOLD HIGH DENSITY TRENCH MOSFET

SEMICONDUCTOR DEVICE

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE

SIC TRENCH DEVICES HAVING N-TYPE GATE OXIDE SHIELD ZONES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRANSISTOR DEVICE AND METHOD

METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SENSE TRANSISTOR WITH LOWER SPREADING RESISTANCE

SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

TRENCH MOSFET AND MANUFACTURING METHOD THEREOF

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METH...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE