with trench gate electrode

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CPC
H01L29/7813

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7813with trench gate electrode

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method for a power MOSFET with gate-source ESD diode...
- Patent number 12,170,311
- Issue date Dec 17, 2024
- Diodes Incorporated
- Wan-Yu Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction silicon carbide semiconductor device and manufacturi...
- Patent number 12,170,312
- Issue date Dec 17, 2024
- Fuji Electric Co., Ltd.
- Kensuke Takenaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench field effect transistor structure comprising epitaxial layer...
- Patent number 12,166,109
- Issue date Dec 10, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Xin Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,166,120
- Issue date Dec 10, 2024
- Fuji Electric Co., Ltd.
- Yohei Kagoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor power transistor and method of manufa...
- Patent number 12,166,082
- Issue date Dec 10, 2024
- LEAP Semiconductor Corp.
- Wei-Fan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor and a shield electrode
- Patent number 12,166,090
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor module
- Patent number 12,165,999
- Issue date Dec 10, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Kouki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with equipotential ring electrode
- Patent number 12,159,865
- Issue date Dec 3, 2024
- Rohm Co., Ltd.
- Hiroyuki Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with semiconductor mesas between adjacent gate...
- Patent number 12,159,933
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 12,159,903
- Issue date Dec 3, 2024
- Hyundai Mobis Co., Ltd.
- Jeong Mok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 12,159,905
- Issue date Dec 3, 2024
- Sumitomo Electric Industries, Ltd.
- Yu Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 12,154,948
- Issue date Nov 26, 2024
- SK Hynix Inc.
- Seong-Wan Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor package
- Patent number 12,154,900
- Issue date Nov 26, 2024
- Rohm Co., Ltd.
- Kentaro Nasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a power MOSFET with gate-source ESD diode...
- Patent number 12,154,942
- Issue date Nov 26, 2024
- Diodes Incorporated
- Wan-Yu Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, semiconductor package, and me...
- Patent number 12,154,834
- Issue date Nov 26, 2024
- Fuji Electric Co., Ltd.
- Makoto Utsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with gate-source ESD diode structure
- Patent number 12,154,941
- Issue date Nov 26, 2024
- Diodes Incorporated
- Wan-Yu Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device
- Patent number 12,154,944
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate source follower for low-noise scaled pixel
- Patent number 12,148,774
- Issue date Nov 19, 2024
- Shenzhen Goodix Technology Co., Ltd.
- Yunfei Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with shielding region and manufacturing method thereof
- Patent number 12,148,824
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Mario Giuseppe Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer circuit, semiconductor integrated circuit device, oscillator...
- Patent number RE50208
- Issue date Nov 12, 2024
- Seiko Epson Corporation
- Kenji Hayashi
Information Patent Grant
Semiconductor device
- Patent number 12,142,678
- Issue date Nov 12, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Hironao Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sic semiconductor layer and raised portio...
- Patent number 12,142,648
- Issue date Nov 12, 2024
- Rohm Co., Ltd.
- Seiya Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction device and method for making the same
- Patent number 12,136,648
- Issue date Nov 5, 2024
- Shenzhen Sanrise-Tech Co., LTD
- Shengan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,136,654
- Issue date Nov 5, 2024
- Denso Corporation
- Hiroki Miyake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact trenches extending from opposit...
- Patent number 12,136,670
- Issue date Nov 5, 2024
- Infineon Technologies AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,136,647
- Issue date Nov 5, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual mode current and temperature sensing for SiC devices
- Patent number 12,132,104
- Issue date Oct 29, 2024
- Infineon Technologies AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,125,901
- Issue date Oct 22, 2024
- Fuji Electric Co., Ltd.
- Makoto Shimosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,125,905
- Issue date Oct 22, 2024
- Renesas Electronics Corporation
- Yoshinori Kaya
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATED BODY TRANSISTORS
- Publication number 20240421233
- Publication date Dec 19, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming Tsang TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421199
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS NANOSHEET TRANSISTOR
- Publication number 20240413239
- Publication date Dec 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240413240
- Publication date Dec 12, 2024
- Magnachip Semiconductor, Ltd.
- Jin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240413241
- Publication date Dec 12, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki KATOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413238
- Publication date Dec 12, 2024
- Kabushiki Kaisha Toshiba
- Katsuhisa TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...
- Publication number 20240413197
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Compensation Structure
- Publication number 20240413198
- Publication date Dec 12, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...
- Publication number 20240413208
- Publication date Dec 12, 2024
- Rohm Co., Ltd.
- Takuji MAEKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413090
- Publication date Dec 12, 2024
- Sumitomo Electric Industries, Ltd.
- Toru HIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD OF THEREOF
- Publication number 20240405065
- Publication date Dec 5, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Chia-Lung HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MEMS Super-Junction Meta...
- Publication number 20240405067
- Publication date Dec 5, 2024
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE
- Publication number 20240405761
- Publication date Dec 5, 2024
- INNOVISION SEMICONDUCTOR INC
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND INTERLAYER INSULATIN...
- Publication number 20240405084
- Publication date Dec 5, 2024
- Fuji Electric Co., Ltd.
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...
- Publication number 20240405094
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...
- Publication number 20240405120
- Publication date Dec 5, 2024
- Infineon Technologies Austria AG
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MEMS Super-Junction Meta...
- Publication number 20240405068
- Publication date Dec 5, 2024
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE FOR A TRENCH POWER MOSFET WITH A SPLIT GATE...
- Publication number 20240405098
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Maurizio Gabriele CASTORINA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405122
- Publication date Dec 5, 2024
- Fuji Electric Co., Ltd.
- Yosuke SAKURAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE
- Publication number 20240405072
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20240405121
- Publication date Dec 5, 2024
- Mosel Vitelic Inc.
- Chia-Ming Kou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240395926
- Publication date Nov 28, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240395928
- Publication date Nov 28, 2024
- HYUNDAI MOBIS CO., LTD.
- Jeong Mok HA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240395749
- Publication date Nov 28, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yusuke ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...
- Publication number 20240395877
- Publication date Nov 28, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR SOURCE-DOWN VERTICAL SEMICONDUCTOR DEVICE
- Publication number 20240395925
- Publication date Nov 28, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES
- Publication number 20240395927
- Publication date Nov 28, 2024
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED HYBRID TFET AND MOSFET
- Publication number 20240395814
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240395878
- Publication date Nov 28, 2024
- RENESAS ELECTRONICS CORPORATION
- Yuta NABUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20240387723
- Publication date Nov 21, 2024
- Fuji Electric Co., Ltd.
- Tetsuya TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS

with trench gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturing method for a power MOSFET with gate-source ESD diode...

Super junction silicon carbide semiconductor device and manufacturi...

Trench field effect transistor structure comprising epitaxial layer...

Silicon carbide semiconductor device and method of manufacturing si...

Silicon carbide semiconductor power transistor and method of manufa...

Electronic device including a transistor and a shield electrode

Semiconductor device and manufacturing method thereof

Semiconductor device and semiconductor module

Semiconductor device with equipotential ring electrode

Semiconductor device with semiconductor mesas between adjacent gate...

Power semiconductor device and method of fabricating the same

Silicon carbide semiconductor device

Semiconductor device having buried gate structure and method for fa...

Semiconductor device and semiconductor package

Manufacturing method for a power MOSFET with gate-source ESD diode...

Silicon carbide semiconductor device, semiconductor package, and me...

Power MOSFET with gate-source ESD diode structure

Super junction power device

Trench-gate source follower for low-noise scaled pixel

MOSFET device with shielding region and manufacturing method thereof

Buffer circuit, semiconductor integrated circuit device, oscillator...

Semiconductor device

Semiconductor device with sic semiconductor layer and raised portio...

Super junction device and method for making the same

Method for manufacturing semiconductor device

Semiconductor device having contact trenches extending from opposit...

Super junction power device and method of making the same

Dual mode current and temperature sensing for SiC devices

Method of manufacturing semiconductor device

Semiconductor device

Patents Applicationslast 30 patents

GATED BODY TRANSISTORS

SEMICONDUCTOR DEVICE

LDMOS NANOSHEET TRANSISTOR

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE

SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...

Semiconductor Device with Compensation Structure

SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD OF THEREOF

Semiconductor Device and Method of Forming MEMS Super-Junction Meta...

GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND INTERLAYER INSULATIN...

METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...

SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...

Semiconductor Device and Method of Forming MEMS Super-Junction Meta...

GATE CONTACT STRUCTURE FOR A TRENCH POWER MOSFET WITH A SPLIT GATE...

SEMICONDUCTOR DEVICE

SiC SEMICONDUCTOR DEVICE

SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE

SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...

STRUCTURES AND METHODS FOR SOURCE-DOWN VERTICAL SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICES INCLUDING ANGLED GATE TRENCHES

STACKED HYBRID TFET AND MOSFET

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...