Patent Application
20230307211
Embodiments of the disclosure generally relate to process kits and process chambers. In particular, embodiments of disclosure relate to process kits for advanced packaging process chambers using a two-component lower shield.
Currently, capacitively coupled plasma (CCP) physical vapor deposition (PVD) chambers are not compatible with existing advanced packaging platforms. The disclosure provides process chambers that can be incorporated into advanced packaging processing platforms, e.g., the Endura® platform from Applied Materials, Inc.
Traditional process chambers are limited to standard PVD technologies. The process chamber body incorporates a shutter garage, with minimal other changes to the overall footprint of the chamber. This allows for the incorporation of ionized PVD technologies into the cluster tool environment.
Accordingly, there is an ongoing need in the art for improved hard masks and methods of forming hard masks.
One or more embodiments of the disclosure are directed to process kits for processing chambers. A lower shield has a ring-shaped body with an inner wall and an outer wall defining a lower shield wall thickness. A wall and a bottom wall define a lower shield height. An outer ledge wall extends outwardly form a lower portion of the outer wall to an outer ledge outer wall. A lower shield ring has a ring-shaped body with an outer wall and an upper inner wall defining a lower shield ring wall thickness. A top face and a bottom face of the upper inner wall define a lower shield ring upper height. A ramped lower inner wall has a top face and a bottom face. The top face of the ramped lower inner wall spaced a distance from the bottom face of the upper inner wall so that the distance decreases from a lower inner wall to an inside surface of the outer wall. At least one upper opening extends from the top face of the lower shield ring to the upper inner wall bottom face. At least one lower opening extends from the top face of the ramped lower inner wall to the bottom face of the ramped lower inner wall.
Some embodiments of the disclosure are directed to processing chambers incorporating a process kit. The process kit lower shield has a ring-shaped body with an inner wall and an outer wall defining a lower shield wall thickness. A wall and a bottom wall define a lower shield height. An outer ledge wall extends outwardly form a lower portion of the outer wall to an outer ledge outer wall. A lower shield ring has a ring-shaped body with an outer wall and an upper inner wall defining a lower shield ring wall thickness. A top face and a bottom face of the upper inner wall define a lower shield ring upper height. A ramped lower inner wall has a top face and a bottom face. The top face of the ramped lower inner wall spaced a distance from the bottom face of the upper inner wall so that the distance decreases from a lower inner wall to an inside surface of the outer wall. At least one upper opening extends from the top face of the lower shield ring to the upper inner wall bottom face. At least one lower opening extends from the top face of the ramped lower inner wall to the bottom face of the ramped lower inner wall.
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
Before describing several exemplary embodiments of the disclosure, it is to be understood that the disclosure is not limited to the details of construction or process steps set forth in the following description. The disclosure is capable of other embodiments and of being practiced or being carried out in various ways.
As used in this specification and the appended claims, the term “substrate” refers to a surface, or portion of a surface, upon which a process acts. It will also be understood by those skilled in the art that reference to a substrate can also refer to only a portion of the substrate, unless the context clearly indicates otherwise. Additionally, reference to depositing on a substrate can mean both a bare substrate and a substrate with one or more films or features deposited or formed thereon
A “substrate” as used herein, refers to any substrate or material surface formed on a substrate upon which film processing is performed during a fabrication process. For example, a substrate surface on which processing can be performed include materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxides, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, without limitation, semiconductor wafers. Substrates may be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal, UV cure, e-beam cure and/or bake the substrate surface. In addition to film processing directly on the surface of the substrate itself, in the present disclosure, any of the film processing steps disclosed may also be performed on an underlayer formed on the substrate as disclosed in more detail below, and the term “substrate surface” is intended to include such underlayer as the context indicates. Thus, for example, where a film/layer or partial film/layer has been deposited onto a substrate surface, the exposed surface of the newly deposited film/layer becomes the substrate surface.
Embodiments of the disclosure incorporate one or more of 1) high-temp e-chuck for wafer temperature control with ability to have dual RF feed 2) VHF shield to contain the plasma in process cavity 3) remote plasma source (RPS) on CCP architecture; 4) and/or chamber architecture with a H2 and O2 gas box in the single chamber, which allows both H2 and O2 gases to be used in the same chamber, either simultaneously or not. In some embodiments, dual RF with high temperature is advantageously used for certain processes related to cleaning and etching. Some embodiments improve one or more of plasma leakage containment, VHF shielding and process spacing.
The high temperature e-chuck of some embodiments enables low wafer temperature at end of the etch process.
The CCP of some embodiments allows for aluminum pasting for long kit life and superior defect performance for adv. packaging applications. The CCP of some embodiments increases the process kit lifetime for metal etch applications.
The integrated shutter garage allows for the incorporation of, or connection with, a pre-clean chamber.
Embodiments of the disclosure provide process chambers with improved process kit lifetimes. Some embodiments provide process chambers that use a high-temperature electrostatic chuck which has an RF capability with improved bipolar chucking. The echuck of some embodiments enabled wafer temperature control during etching.
In some embodiments, the process kit includes a lower shield designed to provide improved conductance and plasma containment for VHF power.
Plasma exposure to the process chamber surfaces can cause damage and particulate formation. The lower shield of some embodiments incorporates a labyrinthine passage that prevents plasma propagation outside of the process region.
The lower shield of some embodiments has gaps to improve the overall gas conductance while preventing plasma propagation.
The lower shield of some embodiments is split into two components: a lower shield and a lower shield ring. This reduces overall manufacturing costs while maintaining performance characteristics.
Referring to
The processing chamber 100 includes chamber body 102 with a top wall 104, a bottom wall 106 and a sidewall 108 enclosing an interior volume 110. A substrate support pedestal 120 is located within the interior volume 110. The substrate support pedestal 120 of some embodiments is configured to move vertically (i.e., closer to or further from the top wall 104) within the interior volume and/or to rotate around a central axis 122 of the substrate support pedestal 120 within the interior volume 110. The skilled artisan will be familiar with components which can be used to move the substrate support pedestal including, for example, motors, switches, actuators and appropriate circuitry.
The substrate support pedestal 120 of some embodiments comprises one or more of a heater or an electrostatic chuck. Heater and electrostatic chuck components are now shown in
Referring to
The lower shield 200 has a ring-shaped body 202 with an inner wall 204 and an outer wall 206 that define a lower shield wall thickness TLS. A top wall 210 and a bottom wall 212 define a lower shield height HLS. An outer ledge wall 220 extends outwardly from a lower portion 215 of the outer wall 206 to an outer ledge outer wall 222.
The outer ledge wall 220 of some embodiments has a uniform top surface. In the illustrated embodiment, the outer ledge wall 220 has a stepped top surface forming an outer ledge upper top face 224 and an outer ledge lower top face 226 separated by an outer ledge intermediate outer wall 228. The slope of the outer ledge intermediate outer wall 228 can be any suitable slope forming either a perpendicular wall (as shown) or an acute or obtuse angle. The outer ledge intermediate outer wall 228 of some embodiments provides a contact point for the lower shield ring 300.
In some embodiments, an inner ledge 230 extends a distance inwardly from an upper portion 217 of the inner wall 204 of the lower shield 200. The inner ledge 230 forms an inner ledge top face 232, and inner ledge bottom face 234 and an inner ledge inner face 236. The inner ledge top face 232 and inner ledge bottom face 234 define a thickness TIL of the inner ledge 230.
The inner ledge top face 232 of some embodiments comprises a plurality of recesses 240 extending from the inner ledge top face 232 to a recess top face 242. In some embodiments, a hole 246 extends through the thickness of the inner ledge 230, or as shown, through the thickness of the inner ledge 230 between the recess top face 242 and the inner ledge bottom face 234. The recess 240 and hole 246 provide a suitable location where a fastener can be used to connect the lower shield 200 to another component. For example, the lower shield 200 of some embodiments is configured to be connected to a substrate support 120.
The lower shield ring 300 is configured to be connected to the lower shield 200. Any suitable connection or interface known to the skilled artisan can be used. For example, in the embodiment illustrated, the outer ledge lower top face 226 of the lower shield 200 has a recess 248 which can cooperatively interact with one or more components of the lower shield ring 300 to connect the lower shield 200 and lower shield ring 300 in a fixed, but removable, manner.
The lower shield ring 300 has a ring-shaped body 302 with an outer wall 304 and an upper inner wall 306 defining a lower shield ring wall thickness TLSR. A top face 310 and a bottom face 312 define the thickness of the upper inner wall 306.
A ramped wall 320 is located at a bottom portion of the lower shield ring 300. The ramped wall 320 has a ramped lower inner wall 322 (also referred to as a ramped wall top face) and a ramped lower outer wall 324 (also referred to as a ramped wall bottom face) that define a thickness of the ramped wall 230. The ramped lower inner wall 320 is spaced a distance from the bottom face 312 of the upper inner wall 306 so that the distance decreases from the ramped lower inner wall 322 to an inside surface 305 of the outer wall 304.
In some embodiments, as shown in the Figures, an inner wall ramp connector face 330 extends from the upper inner wall 306 to the ramped wall 320. In some embodiments, the inner wall ramp connector face 330 forms a seamless connection to the upper inner wall 306 so that the upper inner wall 306 and inner wall ramp connector face 330 are a uniform shape.
In some embodiments, the bottom face 326 of the ramped wall 320 comprises a surface feature configured to align and/or connect the lower shield 200 with the lower shield ring 300. In the embodiment illustrated in
In some embodiments, there is at least one upper opening 350 extending from the top face 310 of the lower shield ring 300 to the upper inner wall bottom face 312. In some embodiments, there are two openings 350 extending from the top face 310 of the lower shield ring 300 to the upper inner wall bottom face 312. In some embodiments, there are three openings 350 extending from the top face 310 of the lower shield ring 300 to the upper inner wall bottom face 312. In some embodiments, there are four openings 350 extending from the top face 310 of the lower shield ring 300 to the upper inner wall bottom face 312.
In some embodiments there is at least one lower opening 360 extending from the top face 322 of the ramped lower inner wall 320 to the bottom face 324 of the ramped lower inner wall 320. In some embodiments there are two lower openings 360 extending from the top face 322 of the ramped lower inner wall 320 to the bottom face 324 of the ramped lower inner wall 320. In some embodiments there are three lower opening 360 extending from the top face 322 of the ramped lower inner wall 320 to the bottom face 324 of the ramped lower inner wall 320. In some embodiments there are four lower opening 360 extending from the top face 322 of the ramped lower inner wall 320 to the bottom face 324 of the ramped lower inner wall 320.
The openings 350 and openings 360 are spaced between regions of the lower shield ring 300 where the inner wall ramp connector face 330 is positioned. These regions, also referred to as partitions, can include openings for fasteners to allow the lower shield 200 and lower shield ring 300 to be connected. In referring to at least one opening, and the like, the opening extends between each of the partitions around the outer portion of the wall, as shown in
In some embodiments, the lower inner wall 324 of the ramped wall 320 has an inner diameter that is smaller than the inner diameter of the upper inner wall 306.
In some embodiments, the recess 248 in the outer ledge lower top face 226 of the lower shield 200 is spaced a distance from the outer ledge intermediate outer wall 228 so that when the lower inner wall 324 is in contact with the outer ledge intermediate outer wall 228 of the lower shield 200, the recess 248 in the outer ledge upper face 226 is aligned with the recess 340 in the bottom face 326 of the ramped wall 320 of the lower shield ring 300.
In some embodiments, when the lower shield 200 and lower shield ring 300 are assembled, the lower inner wall 324 of the lower shield ring 300 is in contact with the outer ledge intermediate wall 228 of the lower shield 200, there is a gap between the outer wall 206 of the lower shield 200 and the upper inner wall 306 of the lower shield ring 300. In some embodiments, when assembled, the bottom face 326 contacts the outer ledge top face 226 of the outer ledge 220 of the lower shield 200. In some embodiments, a gap between the top face 226 of the outer ledge 220 and the bottom face 324 of the ramped wall 320 increases with increasing distance from the lower inner wall 324 to the outer wall 304.
Referring to
Referring to
In some embodiments, the bottom surface 404 of the upper shield 400 within the inner diameter of the upper shield ring 410 has a contoured shape so that the thickness of the upper shield changes. In some embodiments, the thickness of the upper shield 400 is greater at a center 405 of the upper shield 400 than at a position in the range of 50% to 90% of the distance between the center 405 of the upper shield 400 and the inner wall 412 of the upper shield ring 410.
Some embodiments of the process kit, or process chamber, include a grounding ring 500. The grounding ring 500 has an inner surface 502 with an inner diameter greater than the outer diameter of the upper shield ring 410. The grounding ring 500 has a top surface 504 configured to connect to the bottom surface 420 of the upper shield 400 outside the outer diameter of the upper shield ring 410.
In use, the spacing between the various surfaces can affect the flow characteristics of a gas leaving the process region of the process chamber. The process region of the process chamber is defined as the region above the substrate support surface within the bounds of the support ring 600. For example, in some embodiments, the ratio of the overlap between the lower shield and lower shield ring to the gap between the lower shield ring and the lower shield may be in the range of 5:1 to 10:1.
Additional embodiments of the disclosure are directed to support rings 600, as shown in
In some embodiments, the length of the inner top face 620 is configured to achieve improved edge uniformity. The length of the inner top face 620 can affect the plasma characteristics at the wafer edge. Various lengths can be employed depending on, for example, gas species, bias power and electrical fields at the edge.
In some embodiments, the slope angle 635 of the inner sloped face 630 is adjusted to optimize edge uniformity. Without being bound by any particular theory of operation, it is believed that the slope angle affects the plasma characteristics at the wafer edge. Various slope angles can be employed depending on, for example, gas species, bias power and electrical fields at the edge.
Some embodiments of the support ring 600 include an outer sloped face 640 extending from an outer edge 612 of the top face 610 to the outer face 606 so that the thickness of the support ring 600 decreases from the outer edge 612 of the top face 610 to the outer face 606 along the length LOSF of the outer sloped face 640.
Some embodiments of the disclosure are directed to processing chambers comprising the lower shield, lower shield ring and upper shield described herein. In some embodiments, the lower shield is configured to be connected to a substrate support, the lower shield ring configured to be connected to the lower shield. Some embodiments further comprise a support ring having a ring-shaped body with an inner face and an outer face defining a width of the support ring, a top face, a bottom face, an inner top face extending a length from the inner face to an inner sloped face, the inner sloped face connecting the inner top face to the top face so that a thickness of the support ring increases along a length of the inner sloped face from the inner top face to the top face. In one or more embodiments, an outer sloped face extends from an outer edge of the top face to the outer face so that the thickness of the support ring decreases from the outer edge of the top face to the outer face along the length of the outer sloped face.
Reference throughout this specification to “one embodiment,” “certain embodiments,” “one or more embodiments” or “an embodiment” means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the disclosure. Thus, the appearances of the phrases such as “in one or more embodiments,” “in certain embodiments,” “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily referring to the same embodiment of the disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.
Although the disclosure herein has been described with reference to particular embodiments, those skilled in the art will understand that the embodiments described are merely illustrative of the principles and applications of the present disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the method and apparatus of the present disclosure without departing from the spirit and scope of the disclosure. Thus, the present disclosure can include modifications and variations that are within the scope of the appended claims and their equivalents.
