PROCESS FOR FORMING LOW DEFECT DENSITY HETEROJUNCTIONS

Abstract

A method for forming a low defect density heterojunction between a first and a second compound, the first and second compounds each includes a group III element combined with a group V element in the periodic table, the method includes the steps of introducing in the deposition chamber the flux of the group III element for the first compound at substantially the same time while introducing in the deposition chamber a flux of the group V element for the second compound, stopping the flux of the group III element for the first compound after a first predetermined time period, stopping the flux of the group V element for the first compound after a second predetermined time period, and introducing in the deposition chamber a flux of the group III element the group V element for the second compound.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates generally to a semiconductor fabrication method. More particularly, the invention relates to a process for forming low defect density heterojunctions in semiconductor devices.

2. Description of Related Art

In advanced semiconductor devices, junctions between two different semiconductor materials are typically used to improve the performance of the device. These junctions, composed of layers of dissimilar semiconductor material, are known in the art as heterojunctions. The semiconductor materials used at the heterojunctions generally have non-equal band gaps and electron affinities.

A heterojunction has two pieces of semiconductor materials directly in contact with one another. It is often desirable to induce a specific type of bonding at the heterojunction. For example, forcing the heterojunction to have indium antimonide (InSb)-like bonding at an aluminum antimonide (AlSb) to indium arsenide (InAs) heterojunction for improved electron mobility, as described in G. Tuttle, H. Kroemer and J. English, “Effects of Interface layer sequencing on transport properties of InAs/AlSb quantum wells”, J.A.P.—Vol. 67, No. 6, 15 Mar. 1990, pp. 3033. Another example is forcing the heterojunction to have InSb-like bonding in a gallium antimonide (GaSb) to indium arsenide (InAs) superlattice grown on a GaSb substrate for lattice strain compensation.

A common method for achieving this desired bonding is using Molecular Beam Epitaxy (MBE) for growth. One advantage of using MBE growth is low temperature processing, which minimizes out-diffusion and autodoping in the semiconductor material. Another advantage is the precise control of doping profiles and deposition thickness that MBE allows. The MBE process can be used to control the bonding of group III-V materials. For example, the MBE process can be used to produce a GaSb to InAs heterojunction with InSb bonding, as opposed to GaAs bonding, at the heterojunction.

The prior art process of forming a AlGaSb to InAs heterojunction includes the following steps. First, AlGaSb is deposited on a base substrate. During the growth of AlGaSb, the aluminum (Al) and gallium (Ga) fluxes are stopped, and the surface is soaked with the antimony (Sb) flux. This covers any exposed aluminum or gallium atoms with an antimony atom, and any excess antimony should re-evaporate under typical MBE growth temperatures and fluxes. Next, the antimony flux is stopped, and a monolayer of indium is deposited. This indium monolayer is bonded to the antimony atoms on the surface of the substrate. After the deposition of the monolayer of indium, the indium flux is continued and a suitable arsenic flux is initiated, resulting in the growth of InAs. This method of forming the heterojunction is called “forcing InSb-like bonding”.

This procedure of interrupting growth, depositing a monolayer of the desired group III material, and then continuing growth has been discussed in the prior art. Unfortunately, this procedure causes defects at certain heterojunctions. For example, forcing InSb-like bonding at an InAs to AlGaSb heterojunction has resulted in tiny oval defects 113 nucleated at the heterojunction, as shown in FIG. 1. Meanwhile, forcing InSb-like bonding at an AlSb to InAs heterojunction does not result in nucleated defects. The tiny oval defects 113, shown in FIG. 1, formed at the InAs to AlSb heterojunction, have been correlated with excess leakage currents between metal gates (e.g. Schottky gates) and channels. If the metal gate crosses one of these defects, excess leakage from the gate to the channel of the transistor occurs. Hence, with an increasing demand for improved semiconductor fabrication methods, there remains a continuing need for a process for forming semiconductor materials with a low defect density.

BRIEF DESCRIPTION OF THE DRAWINGS

The exact nature of this invention, as well as the objects and advantages thereof, will become apparent from consideration of the following specification in conjunction with the accompanying drawings in which like reference numerals designate like parts throughout the figures.

FIG. 1 is a differential interference contrast optical micrograph of the surface of a HFET layer structure, illustrating the effect of an InAs to AlSb heterojunction forced to have InSb-like bonding, resulting in a high defect density, grown according to a prior art semiconductor growth method.

FIG. 2 is an exemplary diagram depicting the time sequence of events for controlling elemental flux in a deposition chamber, according to a prior art semiconductor fabrication method.

FIG. 3 is an exemplary flow chart depicting a method for forming low defect density heterojunctions, according to an embodiment of the invention.

FIG. 4 is a cross-sectional view of an MBE system.

FIG. 5 schematically shows in cross-section a semiconductor compound AlGaSb deposited on the surface of a substrate according to an embodiment of the invention.

FIG. 6 schematically shows in cross-section a layer of group V element, antimony, being deposited on the surface of the AlGaSb according to an embodiment of the invention.

FIG. 7 schematically shows a monolayer of the group III element, indium, being deposited, according to an embodiment of the invention.

FIG. 8 schematically shows in cross-section a layer of indium arsenide (InAs) being deposited according to an embodiment of the invention.

FIG. 9 schematically shows in cross-section a layer of arsenic deposited at the heterojunction, according to an embodiment of the invention.

FIG. 10 schematically shows in cross-section the deposition of AlGaSb, according to an embodiment of the invention.

FIG. 11 is an exemplary diagram depicting the time sequence of events for controlling elemental flux in the deposition chamber to produce low defect density heterojunctions, according to an embodiment of the invention.

FIG. 12 is a differential interference contrast optical micrograph of the surface of an HFET layer structure illustrating a layer structure with low defect density, according to the method embodying the invention.

SUMMARY OF THE INVENTION

A method for forming a low defect density heterojunction between a first semiconductor compound (i.e. InAs) and a second semiconductor compound (i.e. AlGaSb). The method controls the sequential deposition of the materials to control the detailed bonding at the heterojunctions, and minimize the nucleation of morphological defects. The method comprises depositing the first semiconductor compound on a substrate by introducing in a deposition chamber a flux of the group III element and the group V element for the first semiconductor compound, covering the deposited first semiconductor compound with a layer of the group V element for the first semiconductor compound to prevent the group III element for the first semiconductor compound from being exposed, and depositing the second semiconductor compound on the layer of the group V element for the first semiconductor compound by introducing in the deposition chamber a flux of the group III element and the group V element for the second semiconductor compound. This may produce an unforced heterojunction between the first and second semiconductor compounds.

In one embodiment, the group III and V elements of the first semiconductor compound is indium (In) and arsenic (As), respectively, while the group III and V elements of the second semiconductor compound is aluminum (Al), gallium (Ga) and antimony (Sb), respectively. In another embodiment, the group III and V elements of the first semiconductor compound is gallium (Ga) and antimony (Sb), respectively, while the group III and V elements of the second semiconductor compound is in https://exweb.panasonic.co.jp/ipro/ceeh01/dium (In) and arsenic (As), respectively.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Methods and systems that implement the embodiments of the various features of the invention will now be described with reference to the drawings. The drawings and the associated descriptions are provided to illustrate embodiments of the invention and not to limit the scope of the invention. Reference in the specification to “one embodiment” or “an embodiment” is intended to indicate that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least an embodiment of the invention. The appearances of the phrase “in one embodiment” or “an embodiment” in various places in the specification are not necessarily all referring to the same embodiment. Throughout the drawings, reference numbers are re-used to indicate correspondence between referenced elements. In addition, the first digit of each reference number indicates the figure in which the element first appears.

FIG. 1 is a differential interference contrast optical micrograph of the surface of an HFET layer structure, illustrating a layer with a high defect density, according to a prior art semiconductor fabrication method. The optical micrograph 111 shows nucleated defects 113 on the surface. The defects 113 are randomly distributed across the surface. These defects 113 contribute to excess leakage currents from a transistor's gate (not shown). Although the prior method of forcing InSb-like bonding at the InAs to AlGaSb heterojunction results in nucleated defects 113, the new method of forcing InSb-like bonding at the InAs to AlGaSb heterojunction does not result in defects.

FIG. 2 is an exemplary diagram depicting the time sequence of events for controlling elemental fluxes to produce InSb-like bonding at a heterojunction, according to the prior art semiconductor fabrication method. Since the procedure of interrupting growth of AlGaSb, depositing an indium monolayer, and then continuing growth of InAs produces no defects 113, this procedure suffices in the formation of an AlGaSb to InAs heterojunction. However, heterojunctions that do experience nucleated defects 113 require a different growth procedure, as described herein.

FIG. 3 is an exemplary flow chart depicting a method for forming low defect density heterojunctions according to an embodiment of the invention. The steps for carrying out this method are schematically illustrated in FIGS. 4-11. Since the forced InAs to AlSb heterojunction was identified to be the source of the defects, the method embodying the invention will be discussed in the context of fabricating a low defect InAs to AlSb heterojunction. Nevertheless, this method can also be used for other heterojunctions between different semiconductor compounds, such as InAs to GaSb heterojunctions, including those that do not experience substantial defect density so as to alleviate the need for determining which forced heterojunctions do or do not have defects.

In Step 305, a substrate 411 is prepared for growth by placing it in an MBE deposition chamber 413. The base substrate 411 can be a silicon or gallium arsenide (GaAs) wafer. A cross-sectional view of the apparatus with the base substrate 411 is illustrated in FIG. 4.

Next, in step 310, a constant flux of group III and V elements are introduced into the chamber at inlets 415, 416 and 417, respectively. In this example, the group III elements are aluminum (Al) and gallium (Ga), and the group V element is antimony (Sb). These elements react with one another to form an aluminum gallium antimonide (AlGaSb) layer 510. FIG. 5 shows AlGaSb layer 510 deposited on the surface of the substrate 411, collectively referred to as multilayer 500.

After a predetermined period, which is a function of the desired thickness of the AlGaSb, the fluxes of the group III elements, aluminum (Al) and gallium (Ga), are stopped in Step 315. Since there are no longer aluminum (Al) or gallium (Ga) fluxes in the deposition chamber 413, only the group V flux of antimony (Sb) is impinging on the surface of the AlGaSb, step 320. This covers any exposed aluminum (Al) or gallium (Ga) with antimony (Sb) layer 610, as shown in FIG. 6. Any excess antimony (Sb) should re-evaporate under typical MBE growth temperatures and fluxes. Once the antimony (Sb) layer is formed, the flux of the group V element, antimony (Sb), is stopped, step 325. The substrate 411, compound A (AlGaSb) and the antimony layer 610 are collectively referred to as multilayer 600.

In one method embodying the invention, a monolayer of the group III element, indium (In), is deposited on AlGaSb at the heterojunction in step 330. To create an InSb-like bonding at the AlGaSb to InAs heterojunction, a flux of the group III element, indium (In), is introduced in the deposition chamber 413 https://exweb.panasonic.co.jp/ipro/ceeh01/. The indium reacts with antimony 610 to form an InSb layer 710 on the surface of the multilayer 600, as shown in FIG. 7.

After the deposition of a monolayer of indium (In), a group V element, arsenic (As) flux, is initiated to grow an InAs layer 810 at step 335. FIG. 8 is an exemplary diagram showing an InAs layer 810 growing on the surface of the InSb layer 710. The deposited layers are collectively referred to as multilayer 800.

At step 340, the growth of the InAs layer 810 is terminated and the surface is soaked with group V element, arsenic (As), as shown in FIG. 9. This covers any exposed indium (In) with arsenic (As).

Next, in step 345, the arsenic flux is stopped and fluxes of group III elements, aluminum (Al) and gallium (Ga), and group V element, antimony (Sb) are introduced into the deposition chamber 413. The elements, Al, Ga and Sb, react with one another to form an AlGaSb layer 1010, as shown in FIG. 10. Once the desired thickness of the AlGaSb layer 1010 is achieved, the group III (Al and Ga) and group V (Sb) fluxes are stopped, and growth is terminated in step 350.

FIG. 11 is an exemplary diagram depicting the time sequence of events for controlling elemental flux in the deposition chamber 413 to produce low defect density heterojunctions, according to one embodiment of the invention. The diagram shows that aluminum, gallium and antimony fluxes are introduced in the deposition chamber 413, and then the aluminum and gallium fluxes are stopped, while the flux of antimony continues for a predetermined time period. Then a monolayer of indium is deposited, and an InAs layer is grown.

To form a low defect density InAs to AlGaSb heterojunction, the indium flux is stopped, and the arsenic flux continues, to fully bond the surface of the InAs layer 810. Next, the arsenic flux is stopped, and aluminum, gallium and antimony fluxes are introduced in the chamber 413 to react and deposit AlGaSb. Finally, the aluminum, gallium and antimony fluxes are stopped.

FIG. 12 is a differential interference contrast optical micrograph of the surface of an HFET layer structure illustrating a layer structure with low defect density, according to the method embodying the invention. The optical micrograph 1211 shows no nucleated defects 113. Thus, the InAs to AlGaSb heterojunction, fabricated according to the method embodying the invention, reduces the nucleated defects 113 that formed from prior art techniques. With a low defect 113 density, the InAs to AlSb heterojunction minimizes leakage currents from gates.

While certain exemplary embodiments have been described and shown in the accompanying drawings, it is to be understood that such embodiments are merely illustrative of and not restrictive on the broad invention, and that this invention not be limited to the specific constructions and arrangements shown and described, since various other changes, combinations, omissions, modifications and substitutions, in addition to those set forth in the above paragraphs, are possible. For example, other compounds can be used at the unforced heterojunction from those described above to achieve a low defect density at the interface. Those skilled in the art will appreciate that various adaptations and modifications of the just described preferred embodiment can be configured without departing from the scope and spirit of the invention. Therefore, it is to be understood that, within the scope of the appended claims, the invention may be practiced other than as specifically described herein.

Claims

1. A method for forming a low defect density heterojunction between a first compound and a second compound, the first and second compounds each including a group III element and a group V element in the periodic table, the method comprising: simultaneously depositing a first group III element and a first group V element to form a first compound layer including the first compound during a first period of time;continuously depositing the first group V element while stopping the depositing of the first group III element to form a first junction surface substantially covering the first compound layer during a second period of time, the first junction surface including the first group V element and substantially free of the first group III element; andsimultaneously depositing a second group III element and a second group V element to form a second junction surface and a second compound layer including the second compound during a third period of time, the second junction surface substantially covering the first junction surface, the second compound layer formed on the second junction surface, such that the first and second junction surfaces combine to form the low defect density heterojunction.

2. The method of claim 1, wherein the first group III element is indium (In).

3. The method of claim 1, wherein the second group V element is antimony (Sb).

4. The method of claim 1, wherein the first group V element is arsenic (As).

5. The method of claim 1, wherein the second group III element is selected from a group consisting of aluminum (Al), gallium (Ga), and combinations thereof.

6. The method of claim 1, wherein the first group V element is chemically bonded to the first group III element to form the first compound, and wherein the second group V element is chemically bonded to the second group III element to form the second compound.

7. The method of claim 1, wherein the second period of time comes after the first period of time, and the third period of time comes after the second period of time.

8. The method of claim 1, wherein the second junction surface consists essentially of the second group III element.

9. The method of claim 1, wherein the first group III element is different from the second group III element, and wherein the first group V element is different from the second group V element.

10. A method for forming a low defect density heterojunction between a first compound and a second compound, the first and second compounds each including a group III element and a group V element in the periodic table, the method comprising: simultaneously introducing a first flux of a first group III element and a second flux of a first group V element to form a first compound layer including the first compound;stopping the first flux of the first group III element while continuing the second flux of the first group V element to form a first junction surface substantially covering the first group III element of the first compound layer; andstopping the second flux of the first group V element while introducing a third flux of a second group III element and a fourth flux of a second group V element to form a second junction surface and a second compound layer including the second compound.

11. The method of claim 10, wherein the second junction surface substantially covers the first junction surface, and the second compound layer is formed on the second junction surface, such that the first and second junction surfaces combine to form the low defect density heteroj unction.

12. The method of claim 10, wherein the first group III element is indium (In) and the first group V element is arsenic (As).

13. The method of claim 10, wherein second group V element is antimony (Sb), and the second group III element consists of an element selected from a group consisting of aluminum (Al), gallium (Ga), and combinations thereof.

14. The method of claim 10, wherein the second junction surface consists essentially of the second group III element.

15. The method of claim 10, wherein the first group III element is different from the second group III element, and wherein the first group V element is different from the second group V element.

16. The method of claim 10, further comprising: stopping the third flux of the second group III element and the fourth flux of the second group V element.

17. A method for forming a low defect density heterojunction, the method comprising: concurrently introducing a first flux of indium (In) and a second flux of arsenic (As) to form an indium arsenic (InAs) compound layer during a first period of time;introducing only the second flux of arsenic (As) to form a first junction surface directly on the indium arsenic (InAs) compound layer during a second period of time; andconcurrently introducing a third flux of gallium (Ga), a fourth flux of aluminum (Al), and a fifth flux of antimony (Sb) to form a second junction surface directly on the first junction surface and to form an aluminum gallium antimonide (AlGaSb) compound layer on the second junction surface during a third period of time, the second junction surface having a relationship with the first junction surface to form the low defect density heterojunction between the indium arsenic (InAs) compound layer and the aluminum gallium antimonide (AlGaSb) compound layer.

18. The device of claim 17, wherein the first period of time occurs immediately before the second period of time and the second period of time occurs immediate before the third period of time.

19. The device of claim 17, wherein the relationship between the first junction surface and the second junction surface includes a chemical relationship, such that the first junction surface partially interposes with the second junction surface.

20. The device of claim 17, further comprising: stopping the first flux of indium (In) during the second period of time; andstopping the second flux of arsenic (As) during the third period of time.