Claims
- 1. A process for making a semiconductor device comprising the steps of:
- providing a spin-on-glass having a composition consisting essentially of:
- a) between approximately 15% to 22% by volume of tetraethylorthosilicate;
- b) an amount of nitric acid equivalent to between approximately 0.2% to 1.3% by volume of 70% by weight nitric acid;
- c) between approximately 70% to 85% by volume of alcohol; and
- d) balance water;
- providing a semiconductor substrate;
- coating the semiconductor substrate with the spin-on-glass; and
- heating the coated semiconductor substrate in order to densify the spin-on-glass.
- 2. The process of claim 1 wherein the step of providing a spin-on-glass comprises providing a spin-on-glass having between approximately 70% to 85% by volume of isopropyl alcohol.
- 3. The process of claim 1 wherein the step of providing a spin-on-glass further comprises providing a spin-on-glass having a composition consisting essentially of:
- a) between approximately 16.8% to 19.0% by volume of tetraethylorthosilicate;
- b) an amount of nitric acid equivalent to between approximately 0.4% to 1.1% by volume of 70% by weight nitric acid;
- c) between approximately 74.5% to 81.5% by volume of isopropyl alcohol; and
- d) balance water.
Parent Case Info
This is a divisional of application Ser. No. 07/650,119, filed Feb. 4, 1991., now U.S. Pat. No. 5,186,745.
US Referenced Citations (6)
Divisions (1)
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Number |
Date |
Country |
Parent |
650119 |
Feb 1991 |
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