Claims
- 1. A process for manufacturing a double refraction plate, comprising the steps of: impinging and vapor-depositing dielectric material on a surface of a substrate from an oblique direction of at least 30.degree. relative to a perpendicular to a surface thereof; and controlling the impinging oblique direction and deposited film thickness so that a resulting double refraction layer on the surface has a desired retardation of at least one-eighth of a wavelength.
- 2. The process as claimed in claim 1 characterized by depositing dielectric material at an incident angle more than 45.degree..
- 3. The process as claimed in claim 1 characterized by using a material selected from the group consisting of an oxide of titanium (Ti), an oxide of zirconium (Zr), an oxide of cerium (Ce), an oxide of gallium (Ga) and an oxide of silicon (Si) as dielectric material.
- 4. The process as claimed in claim 1 characterized by using an oxide of titanium (Ti) as dielectric material.
- 5. A process according to claim 1 wherein a desired retardation is achieved partly through selection of the dielectric material being deposited.
- 6. A process according to claim 1 wherein the dielectric material is transparent.
- 7. A process for producing a double refraction plate, comprising the steps of: impinging and depositing dielectric material on a substrate from an oblique direction of at least 30.degree. relative to a perpendicular to the surface thereof so as to create a double-refraction layer on the surface; and directing a polarized light through a variable phase plate to said substrate, said polarized light having a plane of polarization in a specific direction, and by observing the light reflected from said substrate through said variable phase plate determining a retardation of the resulting double refraction plate and controlling the impinging oblique direction and deposited film thickness so as to achieve a desired retardation of at least one-eight of a wavelength.
- 8. The process as claimed in claim 7 characterized by controlling the retardation to be equal to one-fourth of a wavelength.
- 9. The process as claimed in claim 7 characterized by controlling the retardation to be equal to one-eighth of a wavelength.
- 10. A double refraction plate produced by the steps of: impinging and vapor-depositing dielectric material on a surface of a substrate from an oblique direction of at least 30.degree. relative to a perpendicular to the surface thereof; and controlling the impinging oblique direction and deposited film thickness so that a resulting double refraction layer on the surface has a desired retardation of at least one-eighth of a wavelength.
- 11. The double refraction plate as claimed in claim 10 having a deposited film providing a retardation equal to one-fourth of a wavelength.
- 12. The double refraction plate as claimed in claim 10 having a deposited film providing a retardation equal to one-eighth of a wavelength.
- 13. A process for manufacturing a double refraction plate, comprising the steps of:
- selecting a transparent dielectric material;
- vapor-depositing the dielectric material on a surface of a substrate at a given angle of at least 30.degree. relative to a perpendicular to the surface;
- observing a retardation of a deposited double refraction layer on the substrate during the overall process; and
- controlling the retardation so as to achieve a desired retardation value of at least one-eighth of a wave length by controlling the angle of incidence of deposited material and thickness of deposited material.
Priority Claims (1)
Number |
Date |
Country |
Kind |
57-158808 |
Sep 1982 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 530,609, filed Sept. 9, 1983, now abandoned.
US Referenced Citations (6)
Continuations (1)
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Number |
Date |
Country |
Parent |
530609 |
Sep 1983 |
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