Ueno et al., “Preparation of Lead Titanate Films Utilizing self-Control Mechanism of Stoichiometric Composition in Dual-Beam Vacuum Evaporation method”, Jpn. J. Appl. Phys., Part 1 (1992), 31(9B), p2982-2984.* |
Auciello et al., “Synthesis and Characterization of Lead Zirconate Titanate Thin Films Produced by an Automated laser Ablation Deposition technique”, J. Appl. Phys, (1993), 73(10, pt. 1), 5197-207.* |
Funakoshi et al., “Fabrication of Lead Titanate thin Film by Laser Ablation With Alternate Deposition of Lead Oxide and Titanium Oxide Precursors”,Jap. J. Appl. Phys, Part 1, vol. 33, No. 9B, p. 5262-5264, 1994.* |
Barnes et al.,“Multiband Analysis of Photoluminescense Spectra from Electronically Excited Gas-Phase Species produced during laser Ablation of lead Oxide, Zirconium Oxide, Titanium oxide, and lead Zirconate Targets”, Chem Ma(1995), vol.7(3), p. 477-485.* |
Nakamura, T., et al., The Institute of Electronics, Information and Communication Engineers, pp. 53-59, Nov. 1993, “Study of Ferroelectric Thin Films for Application to NDRO Nonvolatile Memories”. |
Maiwa, H., et al., Japan J. Phys., vol. 31, No. 9B, pp. 3029-3032, Sep. 1992, “Crystalline Structure of PbTiO3 Thin Films by Multiple Cathode Sputtering”. |
Hase, T., et al., Japan J. Appl. Phys., vol. 33, No. 9B, pp. 5244-5248, Sep. 1994, “Preparation of Pb(Zr, Ti)O3 Thin Films by Multitarget Sputtering”. |
Kim, J., et al., Mt. Res. Soc. Symp. Proc., vol. 310, pp. 473-478, 1993, “Ultra-Thin Sputtered Films for ULSI DRAMS”. |
The Japan Society of Applied Physics and Related Societies 30p-T-3 (1993), 30a-ME-6 (1994), pp. 443 & 454. |
Gao, Y., et al., “Microstructure of PbTiO3, Thin films deposited on (001)MgO by MOCVD,” J. Mater. Res., vol. 8, No. 1, pp. 145-153, Jan. 1993. |
Bai, G.R., et al., “The relationship between the MOCVD parameters and the crystallinity, epitaxy, and domain stucture of PbTiO3 Films,” J. Mater. Res., vol. 9, No. 1 pp. 156-163, Jan. 1994. |
Iijima, K., et al., “Preparation of c-Axis Oriented PbTiO3 Thin Films and Their Crystallogaphic, Dielectric, and Pyroelectric Properties,” J. Appl. Phys., vol. 60, No. 1, pp. 361-367, Jul. 1986. |
Iijima, K., et al., “Epitaxial Growth and the Crystallographic, Dielectric, and Pyroelectric Properties of Lanthanium-modified Lead Titanate Thin Films,” J. Appl. Phys., vol. 60, No. 8, pp. 2914-2919, Oct. 15, 1986. |
Sakashita, Y., et al., “Dependence of Electrical Properties on Film Thickness in PB(ZRxTI1-x)O3 Thin Films Produced by Metalorganic Chemical Vapor Deposition,” J. Appl. Phys., vol. 73, No. 11, pp. 7857-7863, Jun. 1, 1993. |
Panda, B., et al., “Electron Beam Deposited Lead-Lanthanium-Zirconate-Titanate then Films for Silicon Based Device Applications,” J. Appl. Phys., vol. 79, No. 2, pp. 1008-1012, Jan. 15, 1996. |
Yamauchi, S., et al., “Growth of [111]-oriented Lead Zirconate Titanate Thin Films with Smooth Surface to Improve Electrical Properties,” J. Appl Phys., vol. 35, pp. 1553-1556, 1996. |