Patent Grant
11923225
Generally, material processing, such as wafer processing during semiconductor fabrication, utilizes one or more chambers. For example, a storage chamber stores wafers, a transfer chamber transfers wafers between chambers, and a process chamber is a chamber within which a wafer is processed. During semiconductor fabrication, a wafer often undergoes multiple fabrication processes in different process chambers.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
The following disclosure provides several different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments or configurations discussed.
Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation illustrated in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. Also, relationship terms such as “connected to,” “adjacent to,” “coupled to,” and the like, may be used herein to describe both direct and indirect relationships. “Directly” connected, adjacent, or coupled may refer to a relationship in which there are no intervening components, devices, or structures. “Indirectly” connected, adjacent, or coupled may refer to a relationship in which there are intervening components, devices, or structures.
Semiconductor wafers are subjected to different processes (e.g., wet etching, dry etching, ashing, stripping, metal plating, and/or chemical mechanical polishing) in different processing chambers during the fabrication of semiconductor devices. The wafers are typically transported and temporarily stored in batches in wafer storage devices, also known as carriers, during intervals between the different processes. The wafers of each batch can be stacked vertically in the wafer storage devices and supported by support frames having multiple separate wafer shelves or slots within the wafer storage devices. These wafer storage devices, usually referred to as front-opening unified pods (FOUPs), may provide a humidity and contamination controlled environment to maintain the integrity of the wafers and/or the fabricated layers in and/or on the wafers. These wafer storage devices typically maintain an ultra clean environment.
Moisture from other processing modules, such as an interface module, may enter the wafer storage devices during docking and loading of the wafers between modules. An interface module, such as a facility interface or an equipment front end module (EFEM), may have a different level of moisture or contaminants than the wafer storage devices. The moisture may enter the wafer storage devices and react with residual materials on the wafers, such as from different wafer processes, and form defects in the fabricated layers on the wafers that can result in defective semiconductor devices, and hence, loss in production yield. For example, the wafers may be subjected to an etching process using tetrafluoromethane (CF4) as the etchant and may have cryptohalite ((NH4)2SiF6) as the residual material. Cryptohalite can react with moisture in the form of water vapor to produce ammonia (NH3) and hydrofluoric acid (HF), which can remove portions of the fabricated layer materials from the wafers and form defects in the fabricated layers. In another example, moisture and/or oxygen can induce oxidation or a loss of Cu on wafers stored within the wafer storage devices.
Wafers may be subjected to additional processes and/or techniques to reduce dimensions, increase yield, etc. For example, the wafers may be subjected to a water wash between fabrication operations, which may provide residual moisture on the wafers or an environment surrounding the wafers. The residual moisture in the form of water vapor may be transferred to an environment of an interface module and may subsequently enter connected wafer storage devices. Multiple wafer storage devices, corresponding to wafers at different stages of processing, may be connected to the interface module and provide a source for moisture transfer.
Besides moisture, contaminants in the form of particulates and/or chemical gases from an interface module can enter the wafer storage devices and can also result in defective wafers and hence, defective semiconductor devices. These contaminants, which can be from chemicals outgassed from fabricated layer materials, may adhere to interior surfaces of the interface module and subsequently, transfer back to the wafers in subsequent process operations as the wafers are removed and returned to the wafer storage devices.
The present disclosure provides example processing arrangements and methods that are configured to inhibit and/or reduce moisture and/or contaminants present in an interface module from entering the wafer storage devices or other connected modules. In some embodiments, an example processing arrangement for a wafer includes a flow adjusting unit above an opening defined in a wall. The flow adjusting unit may include one or more gas nozzles and a first layer a first distance below the gas nozzle. The first layer may define a first aperture having a first aperture size. A second layer may be provided a second distance below the one or more gas nozzles and define a second aperture having a second aperture size greater the first aperture size. The one or more gas nozzles may provide a gas flow to the first layer and the first layer may disperse the gas flow directed to the second layer. The second layer may then channel the gas flow in a direction parallel to the wall across the opening defined in the wall.
The example processing arrangements and methods disclosed herein inhibit and/or reduce moisture and/or contaminants present in an interface module from entering one or more connected wafer storage devices, and also provide an air barrier to maintain separation of environments between the interface module and the one or more wafer storage devices. As a result, these example processing arrangements and methods increase the throughput of processed wafers with improved environments of the wafer storage devices and increased production yield due to a decrease in defective wafers. In some embodiments, a vertical air curtain is provided across an opening defined in a wall of a transfer chamber to maintain the separation of environments.
According to some embodiments, the processing arrangement 100 is configured to perform manufacturing procedures involved in the processing of one or more wafers, such as the wafer 106 or a plurality of wafers 107. In some embodiments, the interface module 104 includes an operating machine 109, such as a robotic arm, a track based extension member, or other mechanical device. The operating machine 109 is configured to transfer the wafer 106 between the wafer storage device 108 and the interface module for processing. The wafer 106, processed by the processing arrangement 100, may include a number of layers, such as a semiconductor layer, a conductor layer, and/or insulator layers. In some embodiments, the wafer 106 may include one or more semiconductor, conductor, and/or insulator layers. The semiconductor layers may include an elementary semiconductor such as silicon or germanium with a crystalline, polycrystalline, amorphous, and/or other suitable structure; a compound semiconductor including silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; any other suitable material; and/or combinations thereof. In some embodiments, combinations of semiconductors may take the form of a mixture or gradient such as a substrate in which the ratio of Si and Ge vary across locations. In some embodiments, the wafer 106 may include layered semiconductors. Examples include layering of a semiconductor layer on an insulator such as that used to produce a silicon-on-insulator (“SOI”) substrate, a silicon-on-sapphire substrate, a silicon-germanium-on-insulator substrate, or the layering of a semiconductor on glass to produce a thin film transistor (“TFT”). The wafer 106 may go through many processing operations, such as lithography, etching, and/or doping before a completed die is formed.
In some embodiments, the processing arrangement 100 includes a processing module 114, which may be one of a number of processing modules that may be configured to perform any manufacturing procedure on the wafer 106. Wafer manufacturing procedures include: deposition such as physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE), atomic layer deposition (ALD) and/or other deposition processes; etching (e.g., wet etching, dry etching, plasma etching, reactive-ion etching (RIE), atomic layer etching (ALE), buffered oxide etching, ion beam milling, etc.); lithographic exposure (e.g., photolithography); ion implantation (e.g., embedding dopants in regions of a material); surface passivation; thermal treatments (e.g., rapid thermal anneal, furnace anneals, thermal oxidation, etc.); cleaning such as wet clean processing (e.g., cleaning by solvents such as acetone, trichloroethylene, ultrapure water, etc.), rinsing, and/or plasma ashing; chemical mechanical polishing or chemical mechanical planarizing (CMP); testing; any procedure involved in wafer processing; and/or any combination of procedures. According to an example, the processing module 114 is shown as an example CVD module that receives the wafer 106 from the load lock module 112 through a chamber door 116 for placement and processing on a stage 118. Source reactive materials and a carrier gas 120 may be received from an ancillary processing chamber 122 for processing the wafer 106.
The load lock module 112 is arranged between the processing module 114 and the interface module 104. The load lock module 112 is configured to preserve the environment within the processing module 114 through separation from the interface module 104. In some embodiments, the load lock module 112 receives the wafer 106 through an interface door 115 of the interface module 104 or the chamber door 116 of the processing module 114. When the wafer 106 is inserted into the load lock module 112, the load lock module 112 is sealed. The load lock module 112 is configured to create a load lock environment compatible with the processing module 114 and/or the interface module 104 depending on processing operations of associated with the wafer 106. The load lock environment can be controlled by altering gas content within the load lock module 112, such as by adding gas, exhausting gas, creating a vacuum, and/or other procedures for adjusting the load lock environment. The load lock module 112 may include one or more pumps (not shown) for exhausting gases, such as corrosive gases, from within an interior chamber of the load lock module 112. The one or more pumps of the load lock module 112 may be a centrifugal pump, an air cooled pump (ACP), a roots vacuum pump (RUVAC), or another type of pump, to eliminate corrosive gases, supply inert gases, and/or create a vacuum within the load lock environment. When a suitable environment has been achieved within the load lock module 112, the wafer 106 may be transferred to the interface module 104 or the processing module 114. In some embodiments another processing module, such as a cluster tool module, or one or more other tools, tool components, tool interfaces, adjacent tools, or neighboring tools, may be provided between the load lock module 112 and the interface module 104.
In some embodiments, the processing arrangement 100 includes the load port 110 adjacent to the interface module 104. The load port 110 is configured to receive the wafer storage device 108. In some embodiments, an overhead hoist transport (OHT) (not shown) transports the wafer storage device 108 from another module, such as a stocker (not shown), to the load port 110. In some embodiments, the load port 110 may be connected to a remote load lock (RLL) module (not shown) to receive one or more wafers. For example, a mechanical device may be used to transfer a wafer from between the load port 110 and the remote load lock (RLL) module. In some embodiments, the load port 110 provides an ultra clean environment to the wafer storage device 108. The ultra clean environment can be controlled by altering gas content within the wafer storage device 108, such as by adding gas, exhausting gas, creating a vacuum, and/or other procedures for adjusting and/or maintaining the ultra clean environment. In an example, exhausting gas from within the wafer storage device 108 may be performed, such as to create vacuum conditions, near vacuum conditions (e.g., less than 10−4 torr), or relative vacuum conditions (e.g., less than 10−2 torr). In an example, exhausting gas may be performed before, after, and/or during adding gas to the wafer storage device 108. In an example, the added gas may be N2, Ar, clean dry air (CDA), another type of inert gas, or another type of added gas. In an example the CDA may have: H2O<1 parts per billion (ppb); H2O, CO2<1 milligram (mg) of solute in 1000 mg of solution (ppt) with acids, organics, and other compounds <1 ppt and bases <5 ppt; H2O, CO, CO2, non-methane hydrocarbons (NMHCs)<1 ppb; or other purity levels.
In some embodiments, the wafer storage device 108 is arranged on top of the load port 110 and adjacent to the interface module 104. For example, the wafer storage device 108 may be locked onto a top surface of the load port 110. In some embodiments, the wafer storage device 108 is configured as a standard mechanical interface (SMIF) or a FOUP to retain the plurality of wafers 107. The wafer storage device includes a storage device door 124 that opens to provide transfer of a wafer of the plurality of wafers 107 to the interface module 104. The plurality of wafers 107 may configured for batch processing, such as stacked vertically in the wafer storage device 108. In an example, the wafer storage device 108 may include a plurality of support frames having multiple separate wafer shelves or slots therein to retain the plurality of wafers 107. In an example, the wafer storage device 108 may include a removable cassette to retain the plurality of wafers 107. In some embodiments, the wafer storage device 108 is configured to provide an ultra clean environment, such as a humidity- and a contamination-controlled environment, to maintain the integrity of the plurality of wafers 107.
In some embodiments, the load port 110 communicates gas with the wafer storage device 108 to provide the ultra clean environment within the wafer storage device 108. The gas may be added to the wafer storage device 108 by the load port 110 through a gas inlet and gas may be exhausted from the wafer storage device 108 through a gas outlet. In an example, the wafer storage device 108 includes a diffuser or other ventilation plate(s) within an interior chamber of the wafer storage device to transmit the input gas at different locations within the wafer storage device 108. In an example, the wafer storage device 108 includes a panel-purge diffuser, such as an ultra-high molecular weight polyethylene (UPE) board, to communicate and diffuse the input gas at different locations within the wafer storage device 108. In some embodiments, the load port 110 communicates gas with the wafer storage device 108 to provide a humidity level within the wafer storage device 108 less than 10% relative humidity (RH). In some embodiments, the humidity level within the wafer storage device 108 is less than 5% RH, or less than 1% RH. In some embodiments, the humidity level within the wafer storage device 108 is substantially undetectable. The ultra clean environment within the wafer storage device 108 may be subject to contamination and/or introduction of humidity, such as when the storage device door 124 opens to provide transfer of one or more wafers of the plurality of wafers 107 to the interface module 104.
In some embodiments, the interface module 104 is disposed adjacent to the load port 110, the wafer storage device 108, and the load lock module 112. In some embodiments, the interface module 104 is configured as a facility interface, an EFEM, or other type of interface for transferring the wafer 106 from the wafer storage device 108 to another module and/or device, such as the load lock module 112 or another wafer storage device. The interface module 104 may be disposed within a clean room (not shown), which itself provides a level of cleanliness and/or humidity. The interface module may be configured to provide a mini environment with a higher level of cleanliness and/or lower level of humidity than the clean room. For example, the temperature within the mini environment may be maintained at a consistent temperature, such as between 20° C. and 25° C. (e.g., 22° C.), and a consistent humidity level, such as between 20% RH and 45% RH, between 25% RH and 35% RH, or about 30% RH. The humidity level of the mini environment may change during a processing cycle of the plurality of wafers 107. In some embodiments, the interface module 104 includes a transfer chamber 126 defining a transfer space 127. The transfer chamber 126 of the interface module 104 may receive gas 125 from the clean room environment through a top portion 138 of the interface module 104 and transmit the gas 125 using a fan filter unit 132 to create a gas flow 139 within the transfer chamber 126. In an example, the fan filter unit 132 may operate for a period of time before introduction of the plurality of wafers 107, such as 15 minutes or greater, and the humidity level of the transfer chamber 126 may stabilize at about 25% RH. However, when a batch of the plurality of wafers 107 has received a recent wash cycle and has been subsequently transferred to the transfer chamber 126, residual moisture may cause fluctuations of the humidity level within the transfer chamber 126, such as increasing the humidity level above 35% RH. During repeated cycling and processing of the plurality of wafers 107, moisture within the transfer chamber 126 may build and/or fluctuate faster than an ability of the fan filter unit 132 to normalize environmental conditions. In some embodiments, the mini environment within the transfer chamber 126 of the interface module 104 is configured to provide a level of environmental separation of the plurality of wafers 107 from sources of contamination and/or cross-contamination, such as contamination from human operators.
In some embodiments, the interface module 104 includes a transfer chamber 126 with a wall 128 adjacent to the load port 110 and the wafer storage device 108. The wall 128 defines an opening 130, which may be sealed through operation of an interface door 131. The interface door 131 may be opened to permit the operating machine 109 to transfer the wafer 106 through the opening 130 for processing. In some embodiments, the interface module 104 includes the fan filter unit 132 to create and/or maintain the mini environment within the transfer chamber 126 of the interface module 104. The fan filter unit 132 includes a fan unit 134 and a filter unit 136. The fan unit 134 draws air through a top portion 138 of the interface module 104, which is then filtered by the filter unit 136 then input into the transfer chamber 126 of the interface module 104. Air from within the transfer chamber 126 is then exhausted through a bottom portion 140 of the interface module 104. In some embodiments, an exhaust pump (not shown) is configured to exhaust air from the transfer chamber 126 through the bottom portion 140 of the interface module 104. In some embodiments, a plurality of fan filter units are configured to draw air through the top portion 138 of the interface module 104 and a plurality of exhaust pumps are configured to exhaust air through the bottom portion 140 of the interface module 104. The fan filter unit 132 and the exhaust pump of the interface module 104 cooperate to communicate air within the transfer chamber 126 as the gas flow 139 in a downward direction.
In some embodiments, the interface module 104 includes the flow adjusting unit 102 above the opening 130 defined in the wall 128 of the interface module 104. In some embodiments, the flow adjusting unit 102 includes a gas nozzle 142 to communicate a gas 143 to the flow adjusting unit 102. In some embodiments, the gas 143 is at least one of N2, Ar, clean dry air (CDA), another type of inert gas, or another type of added gas. In an example the CDA may have: H2O<1 parts per billion (ppb); H2O, CO2<1 milligram (mg) of solute in 1000 mg of solution (ppt) with acids, organics, and other compounds <1 ppt and bases <5 ppt; H2O, CO, CO2, NMHCs<1 ppb; or other purity levels.
In some embodiments, the flow adjusting unit 102 includes one or more gas nozzles, such as the gas nozzle 142, and one or more layers, such as a first layer 144, a second layer 146, and/or a third layer 148. In some embodiments, the first layer 144 is provided a first distance below the gas nozzle 142, and a second layer 146 provided a second distance greater than the first distance below the gas nozzle 142. As set forth in greater detail below, the first layer 144 defines a first aperture having a first aperture size and the second layer 146 defines a second aperture having a second aperture size greater the first aperture size. The gas nozzle 142 receives the gas 143 and provides a gas flow to the first layer 144. The first layer 144 disperses the gas flow directed to the second layer 146. The second layer 146 then channels the gas flow in a direction parallel to the wall 128 directed across the opening 130. In some embodiments, the gas flow creates a vertical air curtain directed across the opening 130. In some embodiments, the third layer 148 is provided a third distance greater than the first distance but less than the second distance below the gas nozzle 142. The third layer 148 defines a third aperture having a third aperture size less than the first aperture size of the first aperture in the first layer. In some embodiments, an extension plate 150a is provided below the second layer 146 to constrain the gas flow across the opening 130. In some embodiments, a pair of extension plates 150a, 150b are provided below the second layer 146 to constrain the gas flow across the opening 130.
In some embodiments, the gas nozzle 142 is made of metal materials (such as aluminum, stainless steel, etc.), dielectric materials (such as quartz, alumina, silicon nitride, etc.), a polymer material, a ceramic material, other suitable materials and/or combinations thereof. Examples of suitable polymers include fluoropolymers, polyetherimide, polycarbonate, polyetheretherketone (PEEK), polytetrafluoroethylene (PTFE), polyoxymethylene (POM), polyimide, and/or other suitable polymers. Examples of ceramic material include alumina, ceria, yttria, zirconia, and/or other suitable ceramic materials. Examples of quartz materials include fused quartz, fused silica, quartz glass, and/or other suitable quartz materials.
As illustrated in
In some embodiments, the interface module 104 is provided in a large space clean room (not shown) that provides a clean room environment with lower particle concentration and lower degree of relative humidity than an ambient environment. In some embodiments, the plurality of fan filter units 208 receive air from the clean room and the exhaust pump 210 exhausts air from within the transfer chamber 126 of the interface module 104 to the clean room. In some embodiments, the plurality of fan filter units 208 receive gas from a source external to the clean room and the exhaust pump 210 exhausts gas from within the transfer chamber 126 of the interface module 104 to an external repository outside of the clean room. Other arrangements and/or configurations of the plurality of fan filter units 208 and the exhaust pump 210 are within the scope of the present disclosure.
In some embodiments, the processing arrangement 100 includes a gas supply 214 to communicate the gas 143 to each of the plurality of flow adjusting units 206 through a gas valve 216 and a gas conduit 218. For example, the gas conduit 218 connects to each of the plurality of flow adjusting units 206 through a gas interface 220. In some embodiments, one or more gas valves, such as the gas valve 216, individually control gas flow within sections of the gas conduit 218 corresponding to each of the plurality of flow adjusting units 206. For example, one or more gas interfaces, such as the gas interface 220, may be associated with each of the plurality of flow adjusting units 206 to individually supply the gas 143 thereto. In some embodiments, the gas 143 flows downward from each of the plurality of flow adjusting units 206 across corresponding openings in the wall 128 of the interface module 104 before each corresponding interface door is opened to receive a wafer. In some embodiments, the interface doors of the interface module 104 are operated independently to receive corresponding wafers from the plurality of wafer storage devices 204.
In some embodiments, the processing arrangement 100 includes a gas supply 224, such as a second gas supply, to communicate a gas 225 to each of the plurality of load ports 202 through a gas valve 226 and a gas conduit 228. For example, the gas conduit 228 connects to each of the plurality of flow adjusting units 206 through corresponding gas interfaces (not shown). In some embodiments, the gas 225 purges each of the plurality of wafer storage devices 204 when respectively docked in each of the plurality of load ports 202. In some embodiments, one or more exhaust pumps, such as an exhaust pump 230, is connected to and/or exhausts gas from within each of the plurality of wafer storage devices 204 to create and/or maintain corresponding ultra clean environments therein. In some embodiments, gas from within each of the plurality of wafer storage devices 204 is exhausted through one or more exhaust ports, such as an exhaust port 232.
In some embodiments, the processing arrangement 100 includes a controller 240 to control of at least one of the plurality of load ports 202, the plurality of wafer storage devices 204, the plurality of flow adjusting units 206, the plurality of fan filter units 208, the exhaust pump 210, the exhaust pump 230, the gas valve 216, or the gas valve 226. In an example, the controller 240 controls the gas valve 216 corresponding to the gas supply 214 to initiate the gas flow to the first layer 144 of the flow adjusting unit 102 and thereby form an air curtain across the opening 130 in the wall 128 before opening of the storage device door 124 of the wafer storage device 108 and before opening of the interface door 115 of the interface module 104, which are in front of the wafer storage device 108. The controller 240 communicates with the load port 110 to control the storage device door 124 of the wafer storage device 108 to open. The controller 240 communicates with the interface module 104 to control the interface door 115 of the interface module 104 to open. In an example, upon opening of the storage device door 124 and the interface door 115, the controller 240 controls the operating machine 109 to retrieve the wafer 106 and/or one or more of the plurality of wafers 107 from the wafer storage device 108. In an example, upon opening of the storage device door 124 and the interface door 115, the controller 240 controls the operating machine 109 to transfer the wafer 106 and/or one or more of the plurality of wafers 107 to the wafer storage device 108. After retrieval and/or transfer of one or more wafers, the controller 240 communicates with the load port 110 to control the storage device door 124 of the wafer storage device 108 to close. The controller 240 communicates with the interface module 104 to control the interface door 115 of the interface module 104 to close. The controller 240 then controls the gas valve 216 corresponding to the gas supply 214 to halt the gas flow to the first layer 144 of the flow adjusting unit 102 and thereby cease formation of the air curtain from across the opening 130.
In some embodiments, the controller 240 controls the gas valve 226 corresponding to the gas supply 224 to initiate a gas purge within the wafer storage device 108 before initiating transfer of the wafer 106 and/or one or more of the plurality of wafers 107 between the wafer storage device 108 and the interface module 104. In some embodiments, one or more gas valves, such as gas valve 226, respond to the controller 240 to individually control flow of gas within sections of the gas conduit 228 corresponding to each of the plurality of load ports 202. In some embodiments, one or more gas valves, such as gas valve 216, respond to the controller 240 to individually control flow of gas within sections of the gas conduit 218 corresponding to each of the plurality of flow adjusting units 206. In some embodiments, flow of the gas 143 to each of the plurality of flow adjusting units 206 is controlled individually. In some embodiments, flow of the gas 143 to each of the plurality of flow adjusting units 206 is controlled collectively, such that two or more flow adjusting units of the plurality of flow adjusting units 206 receive flow of the gas 143 at the same time. Other arrangements and/or configurations for controlling the interface module 104, the plurality of load ports 202, the plurality of wafer storage devices 204, the plurality of flow adjusting units 206, the flow of the gas 143 from the gas supply 214, and/or the flow of the gas 225 from the gas supply 224 are within the scope of the present disclosure.
In some embodiments, the first gas sensor 304 or the second gas sensor 306 is at least one of a Pirani heat loss gauge and/or an atmospheric reference gauge to measure and transmit the exit flow rate information to the controller 240. A Pirani heat loss gauge may be configured as a thin metal wire, such as Nickel, suspended in a tube. The thin metal wire may change in electrical potential across a Wheatstone bridge circuit in response to pressure and/or exit flow rate of the gas 143. In an example, the first gas sensor 304 or the second gas sensor 306 may be configured as a micro-electro-mechanical system (MEMS) Pirani vacuum transducer. The first gas sensor 304 or the second gas sensor 306 may be configured to provide an absolute exit flow rate measurement or a relative flow rate measurement, which is the communicated to the controller 240 for comparison with the supplied gas pressure output from the gas supply 214. In an example, the first gas sensor 304 or the second gas sensor 306 is configured as a capacitance manometer to measure absolute and/or relative exit flow rate of the gas 143, or a combination of a Pirani gauge and a capacitance manometer. A Pirani gauge may change in detected pressure and/or flow rate (e.g., an increase of 60% higher than a capacitance manometer) in the presence of water vapor. In some embodiments, a combination of a Pirani gauge and a capacitance manometer are provided to communicate exit flow rate of the gas 143 and moisture information corresponding to a % RH of the gas 143 exiting from the second layer 146. In some embodiments, the first gas sensor 304 detects a first flow rate of the gas 143 output through the second layer 146 at a first location and the second gas sensor 306 detects a second flow rate of the gas 143 output through the second layer 146 at a second location. Fluctuations of detected measurements by the first gas sensor 304 and/or the second gas sensor 306, such as present during initial supply of the gas 143 to the housing 152, are analyzed by the controller 240. The fluctuations in the detected measurements may be reduced below a threshold, such as less than 10% fluctuations, when laminar flow of the gas 143 exiting from the housing 152 and/or laminar flow of the air curtain 301 is obtained. When the detected measurements fall below the threshold, the controller 240 may initiate and/or execute subsequent operations, such as opening the storage device door 124 of the wafer storage device 108, opening the interface door 131 of the interface module 104, and/or transferring the wafer 106 with the operating machine 109. Other arrangements and/or configurations of the first gas sensor 304 and/or the second gas sensor 306 are within the scope of the present disclosure.
In some embodiments, the housing 152 retains the first layer 144, the second layer 146, and/or the third layer 148 above the opening 130. In some embodiments, the first layer 144 has a first thickness AL1, the second layer 146 has a second thickness AL2, and the third layer 148 has a third thickness AL3. In some embodiments, the first thickness AL1 of the first layer 144 is between 1 millimeter (mm) and 20 centimeters (cm), such as between 5 mm and 10 cm, between 1 cm and 8 cm, or about 5 cm. The first thickness AL1 may vary in accordance with the type and flow rate of the gas 143, and/or a number of flow layers retained within the housing 152. In some embodiments, as shown in
In some embodiments, the second layer 146 is retained within the housing 152 below the first layer 144. In some embodiments, the second thickness AL2 of the second layer 146 is between 1 mm and 30 cm, such as between 5 mm and 20 cm, between 1 cm and 15 cm, or about 10 cm. The second thickness AL2 may be changed in accordance with the type and flow rate of the gas 143 to be communicated through the second layer 146, a number of flow layers configured above the second layer 146, and/or a distance of the second layer 146 above the opening 130 in the wall 128 of the interface module 104. In some embodiments, as shown in
In some embodiments, the third layer 148 is retained within the housing 152 between the first layer 144 and the second layer 146. In some embodiments, the third thickness AL3 of the third layer 148 is between 1 mm and 20 cm, such as between 5 mm and 10 cm, between 1 cm and 8 cm, or about 5 cm. The third thickness AL3 may vary in accordance with the type and flow rate of the gas 143, and/or a number of flow layers retained within the housing 152. In some embodiments, as shown in
In some embodiments, the extension plates 150a,b are configured below the second layer 146 to constrain the gas 143 output through the second layer 146 and constrain the air curtain 301 across the opening 130. The opening 130 has an opening length OOl and an opening width OOw. In some embodiments, each of the extension plates 150a,b has an extension plate length EPI and an extension plate depth EPd, and are separated by an extension plate width EPw. The extension plate length EPI is greater than the opening length OOl and the extension plate width EPw is greater than the opening width OOw such that the extension plates 150a,b frame the opening 130. In some embodiments, the housing 152 provides a canopy above the opening 130 and is wider than the opening width OOw. In some embodiments, the extension plates 150a,b have a sufficient extension plate length EPI extending from the housing 152 to exceed a bottom level of the opening 130. In some embodiments, the extension plate width EPw is wider than a width of the storage device door 124 of the wafer storage device 108 such that the extension plates 150a,b do not block the opening of the storage device door 124, do not block the opening of the interface door 131, and do not interfere with transfer of the wafer 106 by the operating machine 109. In some embodiments, the extension plate depth EPd of the extension plates 150a,b is configured to not block an operation space of the operating machine 109 within the transfer chamber 126 of the interface module 104. For example, the extension plate depth EPd of the extension plates 150a,b is not greater than 15 cm. In some embodiments, the extension plate depth EPd is configured with sufficient depth to constrain the air curtain 301 about the opening 130. For example, the extension plate depth EPd is not smaller than 2 cm. Other arrangements and/or configuration of the dimensions of the extension plates 150a,b are within the scope of the present disclosure.
In some embodiments, the first layer 144 is separated from the third layer 148 within the housing 152 by a first gap 420 having a first gap distance G1, and the third layer 148 is separated from the second layer 146 within the housing 152 by a second gap 422 having a second gap distance G2. In some embodiments, the first gap distance G1 is a non-zero number between 1 mm and 10 cm, such as 1 cm. In some embodiments, the second gap distance G2 is non-zero number between 1 mm and 10 cm, such as 1 cm. In some embodiments, the first gap 420 is provided such that the first layer 144 is not in direct contact with the third layer 148 and the second gap 422 is provided such that the third layer 148 is not in direct contact with the second layer 146. The first gap 420 enhances laminar flow of the second gas flow 404 between the first layer 144 and the third layer 148. The second gap 422 enhances laminar flow of the fourth gas flow 408 between the third layer 148 and the second layer 146. Other arrangements and/or configurations of the first gap 420 having the first gap distance G1 and the second gap 422 having the second gap distance G2 are within the scope of the present disclosure.
In some embodiments, the first layer 144 is a porous layer defining a first aperture 410 having a first aperture diameter AD1 corresponding to a first aperture size. In some embodiments, the first layer 144 defines a second aperture 412 having a second aperture diameter AD2 corresponding to a second aperture size. In some embodiments, the first layer 144 defines a plurality of apertures including the first aperture 410 and the second aperture 412, where each of the plurality of apertures have a size greater than or equal to the second aperture 412 but less than or equal to the first aperture 410. In some embodiments, the plurality of apertures of the first layer 144 have at least one of a regular shape or an irregular shape and range in size between and/or equal to a size of the first aperture 410 and the second aperture 412. For example, the first layer 144 includes an irregular aperture 409 having an irregular shape. In some embodiments, the first layer 144 includes a plurality of second-sized apertures with varying distances between adjacent apertures. For example, the first layer 144 defines a first second-sized aperture 411a, a second second-sized aperture 411b, a third second-sized aperture 411c, and a fourth second-sized aperture 411d. The third second-sized aperture 411c is adjacent the first aperture 410 and the fourth second-sized aperture 411d is adjacent the first aperture 410. The first aperture 410 and the third second-sized aperture 411c are separated by a first distance SSD1 and the first aperture 410 and the fourth second-sized aperture 411d are separated by a second distance SSD2. In some embodiments, the first distance SSD1 is less than the second distance SSD2. In some embodiments, the first distance SSD1 is not equal to the second distance SSD2. In some embodiments, the first distance SSD1 is equal to the second distance SSD2.
In some embodiments, the apertures of the first layer 144 are configured such that portions of sides thereof do not have a continuous distance from sides of other apertures of the first layer. In some embodiments, the first layer 144 is a porous layer, such as an ultra-high molecular weight polyethylene (UPE) porous material that defines a plurality of apertures including the first aperture 410 and the second aperture 412. In some embodiments, the first layer 144 is a nonporous material, such as a ridged or semi-rigid plate with a plurality of apertures formed therein. In some embodiments, the first layer 144 is metal, such as stainless steel or aluminum, a non-metal material such as PTFE, PEEK, or POM, or another material that does not generate dust, particles, and/or volatiles and has a small coefficient of friction for the passage of gas therethrough. In some embodiments, the first layer 144 is a mesh material, such as a screen or a combination of randomly formed and joined fibers, or a combination of mesh material(s), defining a plurality of apertures, such as the first aperture 410 or the second aperture 412. In some embodiments, the first aperture diameter AD1 is less than or equal to 5 cm and the second aperture diameter AD2 is less than the first aperture diameter AD1. In some embodiments, the first layer 144 defines the first aperture 410 having a first shape and the second aperture 412 having a second shape different than the first shape.
In some embodiments, the second layer 146 defines a third aperture 414 having a third aperture diameter AD3 corresponding to a third aperture size. In some embodiments, the third aperture size of the third aperture 414 is greater than the first aperture size of the first aperture 410. In some embodiments, the second layer 146 is a rigid grid structure that defines a plurality of apertures, including the third aperture 414, where a size of each of the plurality of apertures is greater than a size of the first aperture 410. In some embodiments, the second layer 146 defines a plurality of apertures, including the third aperture 414, arranged in a grid pattern, such as an n×m matrix of the plurality of apertures. In some embodiments, the second layer 146 defines a plurality of apertures arranged in an n×m grid pattern, where n is an integer greater than or equal to 2 and m is an integer greater than or equal to 2. In some embodiments, the third aperture diameter AD3 of the third aperture 414 is greater than the first aperture diameter AD1 of the first aperture 410. In some embodiments, the third aperture 414 has a polygonal shape. In an example, the polygonal shape of the third aperture 414 is a regular polygon. In some embodiments, the first aperture diameter AD1 of the first aperture 410 in the first layer 144 is less than a side length SL of a side 418 defining the third aperture 414 in the second layer 146. In some embodiments, the first layer 144 has a first number of apertures and the second layer 146 has a second number of apertures less than the first number of apertures. In some embodiments, the first layer 144 has the first number of apertures, the second layer 146 has the second number of apertures less than the first number of apertures, and the third layer 148 has a third number of apertures greater than the first number of apertures.
In some embodiments, the third layer 148 is a porous layer defining a fourth aperture 416 having a fourth aperture diameter AD4 corresponding to a fourth aperture size. In some embodiments, the third layer 148 is a UPE porous material that defines a plurality of apertures including the fourth aperture 416. In some embodiments, the third layer 148 is a nonporous material, such as a ridged or semi-rigid plate with a plurality of apertures formed therein. In some embodiments, the third layer 148 is metal, such as stainless steel or aluminum, a non-metal material such as PTFE, PEEK, or POM, or another material that does not generate dust, particles, and/or volatiles and has a small coefficient of friction for the passage of gas therethrough. In some embodiments, the third layer 148 is a mesh material, such as a screen or a combination of randomly formed and joined fibers, or a combination of mesh material(s), defining a plurality of apertures, such as the fourth aperture 416. In some embodiments, the fourth aperture diameter AD4 of the fourth aperture 416 is less than the second aperture diameter AD2 of the second aperture 412. In some embodiments, the third layer 148 defines a plurality of apertures, including the fourth aperture 416, where each of the plurality of apertures has a size less than a size of the second aperture 412. In some embodiments, the plurality of apertures of the third layer 148 have at least one of a regular shape or an irregular shape and range in size less than a size of the second aperture 412.
In some embodiments, the plurality of apertures of the third layer 148 have at least one of a regular shape or an irregular shape and range in size less than the second aperture 412 of the first layer 144. For example, the third layer 148 includes an irregular aperture 415 having an irregular shape. In some embodiments, the third layer 148 includes a plurality of third-sized apertures with varying distances between adjacent apertures. For example, the third layer 148 defines a first third-sized aperture 417a, a second third-sized aperture 417b, a third third-sized aperture 417c, and a fourth third-sized aperture 417d. The third third-sized aperture 417c is adjacent the fourth aperture 416 and the fourth third-sized aperture 417d is adjacent the fourth aperture 416. The fourth aperture 416 and the third third-sized aperture 417c are separated by a third distance SSD3 and the fourth aperture 416 and the fourth third-sized aperture 417d are separated by a fourth distance SSD4. In some embodiments, the third distance SSD3 is less than the fourth distance SSD4. In some embodiments, the third distance SSD3 is not equal to the fourth distance SSD4. In some embodiments, the third distance SSD3 is equal to the fourth distance SSD4. Other arrangements and/or configurations of the first layer 144, the second layer 146, and/or the third layer 148 are within the scope of the present disclosure.
In some embodiments, the section of apertures 500 includes a first aperture 502 configured as a polygon. For example, the first aperture 502 is configured as a regular hexagon, including six sides 506a-f, where each side has a side length SL1. In some embodiments, the first aperture 502 is laterally adjacent to six second apertures 503a-f, each configured as regular hexagons, such that at least one side of the first aperture 502 is continuous with at least one side of each of the second apertures 503a-f.
In some embodiments, layers above the second layer 146, such as within the housing 152 of the flow adjusting unit 102, are configured to define apertures with corresponding aperture diameters that are less than the side length SL1 of the first aperture 502. In an example, with reference to
As shown in
In some embodiments, the section of apertures 500 includes a first aperture 512 configured as a polygon. For example, the first aperture 512 is configured as a regular triangle, including three sides 516a-c, where each side has a side length SL1. In some embodiments, the first aperture 512 is laterally adjacent to three second apertures 513a-c such that at least one side of the first aperture 512 is continuous with at least one side of the second apertures 513a-c.
In some embodiments, layers above the second layer 146, such as within the housing 152 of the flow adjusting unit 102, are configured to define apertures with corresponding aperture diameters that are less than the side length SL1 of the first aperture 512. In an example, with reference to
As shown in
In some embodiments, the section of apertures 500 includes a first aperture 522 configured as a polygon. For example, the first aperture 522 is configured as a regular diamond, including four sides 526a-d, where each side has a side length SL1. In some embodiments, the first aperture 522 is laterally adjacent to four second apertures 523a-d such that at least one side of the first aperture 522 is continuous with at least one side of the second apertures 523a-d.
In some embodiments, layers above the second layer 146, such as within the housing 152 of the flow adjusting unit 102, are configured to define apertures with corresponding aperture diameters that are less than the side length SL1 of the first aperture 522. In an example, with reference to
As shown in
In some embodiments, the section of apertures 500 includes a first aperture 532 configured as a polygon. For example, the first aperture 522 is configured as a regular rectangle, including four sides 536a-d, where side 536a and side 536c have a side length SL1 and side 536b and side 536d have a side length SL2. In some embodiments, the first aperture 532 is laterally adjacent to six second apertures 533a-f such that at least one side of the first aperture 532 is continuous with at least one side of the second apertures 533a-f.
In some embodiments, layers above the second layer 146, such as within the housing 152 of the flow adjusting unit 102, are configured to define apertures with corresponding aperture diameters that are less than the side length SL1 of the first aperture 532. In an example, with reference to
In some embodiments, the second layer 146 includes a first aperture 602, a second aperture 604, a third aperture 606, and a fourth aperture 608. The second aperture 604 is defined by a first side 610 and a second side 612. The third aperture 606 is defined by a third side 614 and the fourth aperture 608 is defined by a fourth side 616. The first side 610 is adjacent the third side 614. The second side 612 is adjacent the fourth side 616. The first side 610 is separated from the third side 614 by a first distance SW1. The third side 614 is separated from the fourth side 616 by a second distance SW2. In some embodiments, the first distance SW1 is equal to the second distance SW2.
In some embodiments, the first side 610 has a first length S1, the second side 612 has a second length S2, the third side 614 has a third length S3, and the fourth side 616 has the fourth length S4. In some embodiments, the first length S1 is equal to the third length S3. In some embodiments, the second length S2 is equal to the fourth length S4. In some embodiments, the first distance SW1 is constant between the first side 610 and the third side 614 along the first length S1 and the third length S3. In some embodiments, the second distance SW2 is constant between the second side 612 and the fourth side 616 along the second length S2 and the fourth length S4. In some embodiments, the first aperture 602, the second aperture 604, the third aperture 606, and the fourth aperture 608 have an identical shape. In some embodiments, the first aperture 602, the second aperture 604, the third aperture 606, and the fourth aperture 608 have an identical side length. In some embodiments, spacing between the first aperture 602 and the second aperture 604 is the same as the spacing between the third aperture 606 and the fourth aperture 608. In some embodiments, spacing between the first aperture 602 and the second aperture 604, the second aperture 604 and the third aperture 606, the third aperture 606 and the fourth aperture 608, and the fourth aperture 608 and the first aperture 602 is the same. In some embodiments, spacing between the first aperture 602 and the second aperture 604, the second aperture 604 and the third aperture 606, the third aperture 606 and the fourth aperture 608, and the fourth aperture 608 and the first aperture 602 is less than or equal to 5 mm. Other arrangements and/or configurations of the first aperture 602, the second aperture 604, the third aperture 606, and the fourth aperture 608 are within the scope of the present disclosure.
With reference to
With reference to
With reference to
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With reference to
In some embodiments, the flow adjusting unit 102 includes the first layer 144. The first layer 144 defines a first aperture 802, such as the first aperture 410 and/or the second aperture 412 set forth above with reference to
In some embodiments, the first layer 144 is disposed a first distance BN1 below the gas nozzle 142, the second layer 146 is disposed a second distance BN2 below the gas nozzle 142, the third layer 148 is disposed a third distance BN3 below the gas nozzle 142, and the fourth layer 902 is disposed a fourth distance BN4 below the gas nozzle 142. In some embodiments, the second distance BN2 is greater than the first distance BN1. In some embodiments, the third distance BN3 is greater than the first distance BN1 but less than the second distance BN2. In some embodiments, the fourth distance BN4 is greater than the third distance BN3 but less than the second distance BN2. In some embodiments where one or more layers, such as the fourth layer 902, are disposed between the second layer 146 and the third layer 148, each of the one or more layers has an associated distance BNx greater than the first distance BN1 but less than the second distance BN2.
In some embodiments, a first gap AG1 is provided between the first layer 144 and the third layer 148. In an example, the first gap AG1 is greater than 1 mm and less than or equal to 10 cm. In some embodiments, a second gap AG2 is provided between the third layer 148 and the fourth layer 902. In an example, the second gap AG2 is greater than 1 mm and less than or equal to 10 cm. In some embodiments, a third gap AG3 is provided between the fourth layer 902 and the second layer 146. In an example, the third gap AG3 is greater than 1 mm and less than or equal to 10 cm. In some embodiments where one or more layers, such as the fourth layer 902, are disposed between the second layer 146 and the third layer 148, each of the one or more layers has an associated gap AGx between adjacent layers greater than 1 mm and less than or equal to 10 cm.
In some embodiments, the first layer 144 has a first thickness W1, the second layer 146 has a second thickness W2, the third layer 148 has a third thickness W3, and the fourth layer 902 has a fourth thickness W4. In some embodiments, the second thickness W2 is greater than the third thickness W3. In some embodiments, the second thickness W2 is greater than the fourth thickness W4. In some embodiments, the first thickness W1 is greater than the third thickness W3. In some embodiments, the first thickness W1 is greater than the fourth thickness W4. In some embodiments where one or more layers, such as the fourth layer 902, are disposed between the second layer 146 and the third layer 148, each of the one or more layers has an associated thickness Wx less than the second thickness W2. Other arrangements and/or configurations of the first layer 144, the second layer 146, the third layer 148, or the fourth layer 902 are within the scope of the present disclosure.
In some embodiments, the storage component 1040 stores information and/or software related to the operation and use of the device 1000. For example, the storage component 1040 may include a hard disk (e.g., a magnetic disk, an optical disk, a magneto-optic disk, and/or a solid state disk), a compact disc (CD), a digital versatile disc (DVD), a floppy disk, a cartridge, a magnetic tape, and/or another type of non-transitory computer-readable medium, along with a corresponding drive. The input component 1050 includes a component that permits the device 1000 to receive information, such as via user input (e.g., a touch screen display, a keyboard, a keypad, a mouse, a button, a switch, and/or a microphone). Additionally, or alternatively, the input component 1050 may include a sensor for sensing information (e.g., a global positioning system (GPS) component, an accelerometer, a gyroscope, and/or an actuator). The output component 1060 includes a component that provides output information from device 1000 (e.g., a display, a speaker, and/or one or more light-emitting diodes (LEDs)). The communication interface 1070 includes a transceiver-like component (e.g., a transceiver and/or a separate receiver and transmitter) that enables the device 1000 to communicate with other devices, such as via a wired connection, a wireless connection, or a combination of wired and wireless connections. The communication interface 1070 may permit the device 1000 to receive information from another device and/or provide information to another device. For example, the communication interface 1070 may include an Ethernet interface, an optical interface, a coaxial interface, an infrared interface, a radio frequency (RF) interface, a universal serial bus (USB) interface, a Wi-Fi interface, a cellular network interface, and/or the like.
In some embodiments, the device 1000 may perform one or more processes described herein. The device 1000 may perform these processes based on the processor 1020 executing software instructions stored by a non-transitory computer-readable medium, such as the memory 1030 and/or the storage component 1040. A computer-readable medium is defined herein as a non-transitory memory device. A memory device includes memory space within a single physical storage device or memory space spread across multiple physical storage devices. Software instructions may be read into the memory 1030 and/or the storage component 1040 from another computer-readable medium or from another device via the communication interface 1070. When executed, software instructions stored in the memory 1030 and/or the storage component 1040 may cause the processor 1020 to perform one or more processes described herein. Additionally, or alternatively, hardwired circuitry may be used in place of or in combination with software instructions to perform one or more processes described herein. Thus, implementations described herein are not limited to any specific combination of hardware circuitry and software. The number and arrangement of the components shown in
According to some embodiments, a method includes initiating a gas flow of a first gas parallel to a wall of an interface module to create an air curtain across an opening defined in the wall. The method includes moving an interface door to reveal the opening, wherein the air curtain restrains a second gas within the interface module from passing through the opening. The method includes transferring a semiconductor wafer through the opening and moving the interface door to cover the opening. The method includes halting the gas flow of the first gas after moving the interface door to cover the opening.
In some embodiments, the method includes initiating a gas flow of the second gas in a downward direction within the interface module, wherein the gas flow of the first gas has a first flow rate and the gas flow of the second gas has a second flow rate greater than the first flow rate.
In some embodiments, the method includes exhausting the first gas and the second gas from a lower portion of the interface module such that the air curtain is maintained in a downward direction within a transfer chamber of the interface module across the opening.
In some embodiments, the method includes supplying the gas flow of the first gas into a housing disposed within a transfer chamber of the interface module above the opening. The method includes passing the gas flow of the first gas through a first layer in the housing, wherein the first layer defines a first aperture. The method includes passing the gas flow of the first gas from the first layer through a second layer in the housing, wherein the second layer defines a second aperture having a second aperture size greater than a first size of the first aperture to constrain and transmit the gas flow.
In some embodiments, the second layer defines a third aperture, and the second aperture and the third aperture are arranged in a grid pattern in the second layer.
In some embodiments, the second layer defines a plurality of apertures, including the second aperture and the third aperture, and the grid pattern is an n×m matrix of the plurality of apertures.
In some embodiments, the first layer defines a third aperture having a third shape different than a first shape of the first aperture.
In some embodiments, the first gas comprises a first gas type and the second gas comprises a second gas type different from the first gas type.
In some embodiments, the first gas has a lower relative humidity than the second gas.
According to some embodiments, a method includes supplying a gas flow into a housing disposed within a transfer chamber of an interface module for transferring a semiconductor wafer. The method includes passing the gas flow through a first layer in the housing, wherein the first layer defines a plurality of first apertures. The method includes passing the gas flow through a second layer in the housing after passing the gas flow through the first layer, wherein the second layer defines a plurality of polygonal second apertures to create, from the gas flow within the housing, a laminar air curtain exiting the housing.
In some embodiments, the method includes retaining the first layer within the housing below at least one gas nozzle to define a first gap between the at least one gas nozzle and the first layer. The method includes dispersing the gas flow within the first gap prior to passing the gas flow through the first layer and retaining the second layer within the housing below the first layer to define a second gap between the first layer and the second layer. The method includes dispersing the gas flow within the second gap prior to passing the gas flow through the second layer.
In some embodiments, the method includes passing the gas flow through a third layer disposed between the first layer and the second layer in the housing, wherein the third layer defines a plurality of third apertures and each of the first apertures has a diameter greater than a diameter of each of third apertures in the third layer.
In some embodiments, each of the plurality of first apertures has a corresponding first diameter less than or equal to a first maximum diameter, and each of the plurality of polygonal second apertures has a second diameter greater than the first maximum diameter.
In some embodiments, each of the plurality of first apertures has a corresponding first diameter less than or equal to a first maximum diameter, each of the plurality of polygonal second apertures has a first side with a first side length greater than the first maximum diameter, and each of the plurality of polygonal second apertures has a second side contiguous with the first side of an adjacent polygonal second aperture of the plurality of polygonal second apertures.
In some embodiments, the method includes constraining the laminar air curtain exiting the housing with a pair of extension portions extending from sides of the housing.
In some embodiments, a device includes a memory including processor executable instructions, and one or more processors operatively coupled to the memory that upon executing the processor executable instructions cause performance of operations. The operations include detecting, from a load port adjacent to an interface module, docking of a front opening unified pod (FOUP) onto the load port. The operations include controlling a gas supply to initiate a gas flow, wherein the gas flow creates a laminar air curtain across an opening defined in the interface module. The operations include controlling an interface door of the interface module adjacent to the FOUP to reveal the opening after control of the gas supply to initiate the gas flow. The operations include controlling an operating machine to transfer a semiconductor wafer through the opening between the FOUP and the interface module and controlling the interface door to cover the opening. The operations include controlling the gas supply to halt the gas flow after control of the interface door to cover the opening.
In some embodiments, the device causes performance of operations that include controlling a second interface door of the interface module to open to reveal a second opening defined in the interface module after control of the interface door to cover the opening. The operations include controlling the operating machine to transfer the semiconductor wafer through the second opening.
In some embodiments, the device causes performance of operations that include detecting, from a second load port adjacent to the interface module, docking of a second FOUP onto the second load port. The operations include controlling the gas supply to initiate a second gas flow, wherein the second gas flow creates a second laminar air curtain across the second opening. The operations include controlling a second interface door of the interface module adjacent to the second FOUP to reveal the second opening after control of the gas supply to initiate the second gas flow. The operations include controlling the operating machine to transfer the semiconductor wafer through the second opening and controlling the second interface door to cover the second opening. The operations include controlling the gas supply to halt the second gas flow after control of the second interface door to cover the second opening.
In some embodiments, the device causes performance of operations that include controlling the gas supply to initiate the gas flow, the operations include supplying the gas flow into a housing disposed within a transfer chamber of the interface module for transferring the semiconductor wafer. The operations include passing the gas flow through a first layer in the housing, the first layer defining a plurality of first apertures. The operations include passing the gas flow through a second layer in the housing after passing through the first layer, the second layer defining a plurality of polygonal second apertures to create, from the gas flow within the housing, the laminar air curtain.
In some embodiments, the device causes performance of operations that include controlling the gas supply to initiate the gas flow as a first gas flow of a first gas, and controlling a fan filter unit to initiate a second gas flow of a second gas within the interface module, wherein the first gas has a lower relative humidity than the second gas.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Although the subject matter has been described in language specific to structural features or methodological acts, it is to be understood that the subject matter of the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are disclosed as example forms of implementing at least some of the claims.
Various operations of embodiments are provided herein. The order in which some or all of the operations are described should not be construed to imply that these operations are necessarily order dependent. Alternative ordering will be appreciated having the benefit of this description. Further, it will be understood that not all operations are necessarily present in each embodiment provided herein. Also, it will be understood that not all operations are necessary in some embodiments.
It will be appreciated that layers, features, elements, etc. depicted herein are illustrated with particular dimensions relative to one another, such as structural dimensions or orientations, for example, for purposes of simplicity and ease of understanding and that actual dimensions of the same differ substantially from that illustrated herein, in some embodiments. Additionally, a variety of techniques exist for forming the layers, regions, features, elements, etc. mentioned herein, such as at least one of etching techniques, planarization techniques, implanting techniques, doping techniques, spin-on techniques, sputtering techniques, growth techniques, or deposition techniques such as CVD, for example.
Moreover, “exemplary” is used herein to mean serving as an example, instance, illustration, etc., and not necessarily as advantageous. As used in this application, “or” is intended to mean an inclusive “or” rather than an exclusive “or”. In addition, “a” and “an” as used in this application and the appended claims are generally to be construed to mean “one or more” unless specified otherwise or clear from context to be directed to a singular form. Also, at least one of A and B and/or the like generally means A or B or both A and B. Furthermore, to the extent that “includes”, “having”, “has”, “with”, or variants thereof are used, such terms are intended to be inclusive in a manner similar to the term “comprising”. Also, unless specified otherwise, “first,” “second,” or the like are not intended to imply a temporal aspect, a spatial aspect, an ordering, etc. Rather, such terms are merely used as identifiers, names, etc. for features, elements, items, etc. For example, a first element and a second element generally correspond to element A and element B or two different or two identical elements or the same element.
Also, although the disclosure has been shown and described with respect to one or more implementations, equivalent alterations and modifications will occur to others of ordinary skill in the art based upon a reading and understanding of this specification and the annexed drawings. The disclosure comprises all such modifications and alterations and is limited only by the scope of the following claims. In particular regard to the various functions performed by the above described components (e.g., elements, resources, etc.), the terms used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure. In addition, while a particular feature of the disclosure may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular application.
This application claims priority to U.S. Provisional Application 63/164,617, titled AIR BARRIER DEVICE AND ITS OPERATION” and filed on Mar. 23, 2021, which is incorporated herein by reference.
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| Number | Date | Country | |
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| 20220310429 A1 | Sep 2022 | US |
| Number | Date | Country | |
|---|---|---|---|
| 63164617 | Mar 2021 | US |
