Claims
- 1. A method of correcting proximity effects in an exposure pattern for electron beam lithography, the exposure pattern consisting of a plurality of shapes, the method comprising the steps of:subdivision of the shapes into edge pixels and interior pixels; and modification of the exposure pattern by uniformly removing a fraction of the interior pixels.
- 2. The method of claim 1, wherein the modification step comprises:defining a coordinate array A(X,Y) for the pixels, where X and Y are integers; and removing interior pixels for which X+Y is an even integer.
- 3. The method of claim 1, wherein the modification step comprises:defining a coordinate array A(X,Y) for the pixels, where X and Y are integers; and removing interior pixels for which X+Y is an odd integer.
- 4. The method of claim 1, wherein the fraction is ½.
- 5. The method of claim 1, wherein the pixels are square and measure 25 nm on a side.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of U.S. Provisional Application No. 60/124,565 filed Mar. 16, 1999.
US Referenced Citations (6)
Non-Patent Literature Citations (3)
Entry |
Owen et al., “Application of the Ghost proximity effect . . . ”, J. Vac. Sci. Technol. B 3(1), Jan./Feb. 1985, pp. 153-158. |
MA et al., “Proximity corrections in a rasterscan . . . ”, J. Vac. Sci. Technol. 19(4), Nov./Dec. 1981 pp. 1275-1278. |
Parikh, “Corrections to proximity effects in . . . ”, J. Appl. Phys. 50(6). Jun. 1979, pp. 4371-4377. |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/124565 |
Mar 1999 |
US |