Number | Date | Country | Kind |
---|---|---|---|
61-45958 | Mar 1986 | JPX | |
61-95413 | Apr 1986 | JPX | |
61-206832 | Sep 1986 | JPX |
Number | Name | Date | Kind |
---|---|---|---|
2847585 | Christian | Aug 1958 | |
2879400 | Schneeberger | Mar 1959 | |
3396318 | Chow | Aug 1968 | |
3598997 | Baertsch | Aug 1971 | |
3757123 | Archer et al. | Sep 1973 | |
3864722 | Carnes | Feb 1975 | |
3946151 | Kamiyama et al. | Mar 1976 | |
4210805 | Kobayashi et al. | Jul 1980 | |
4531055 | Shepherd, Jr. et al. | Jul 1985 | |
4651001 | Harada et al. | Mar 1987 | |
4678938 | Nakamura | Jul 1987 | |
4714950 | Kawajiri et al. | Dec 1987 | |
4785186 | Street et al. | Nov 1988 |
Number | Date | Country |
---|---|---|
2609731 | Sep 1976 | DEX |
58-118163 | Jul 1983 | JPX |
1018402 | Jan 1966 | GBX |
Entry |
---|
Brodsky, "Contact Barriers to Semiconductor Crystals", IBM Tech. Disclosure Bulletin, vol. 17, No. 6, Nov. 1974, pp. 1814-1816. |
Patent Abstracts of Japan, vol. 6, No. 258 (P-163) [1136], Dec. 17, 1982 & JP-A-57 154 083 (Yokogawa Denki Seisakusho K.K.) 09-22-1982. |
IEEE Nuclear Science, vol. NS-33, No. 1, Feb. 1986, pp. 351-354, IEEE New York, U.S.; S. N. Kaplan et al.: "Detection of charged particles in amorphous silicon layers" *p. 351: "Detector material"; p. 352, col. 1, lines 1-5 bottom of col. 2; FIGS. 3, 4*. |