This disclosure relates generally to rapid thermal anneal (RTA) apparatus and more particularly to RTA apparatus adapted for use with susceptors.
As is known in the art, rapid thermal anneal (RTA) apparatus has been used in the semiconductor industry for many years. Early, the apparatus was used in processing silicon wafers during an implantation activation phase of the fabrication. One such arrangement is shown in
In more recent times, RTA apparatus has been used to alloy metals such as when forming ohmic contacts to the active devices, for example, source and drain contacts for Field Effect Transistors (FETs) formed in compound semiconductor material of the wafer, such as GaN or GaAs compound semiconductor material. In some applications, a susceptor, such as a graphite susceptor, which absorbs heat received by radiation from the upper and lower sets of heating lamps, as shown in
In accordance with the present disclosure, an apparatus is provided for heating a wafer having a semiconductor material. The apparatus includes: a chamber; a source of radiant heat; a source of gas; a susceptor disposed in the chamber to receive and absorb heat radiated by the source of radiant heat; the susceptor having an opening therein to allow a flow of gas to pass from the source of gas through an interior region of the susceptor and over the wafer.
In one embodiment, the susceptor has a susceptor tray, such susceptor tray having a wafer support portion for supporting the wafer; and a susceptor tray cover; and wherein the susceptor tray cover is disposed over the wafer; and wherein the interior region is between the susceptor tray and the susceptor tray cover.
In one embodiment, the susceptor tray cover is disposed on the susceptor tray.
In one embodiment, the susceptor includes: a standoff for supporting the susceptor tray cover over the susceptor tray to provide the interior region between the susceptor tray cover and the susceptor tray.
In one embodiment, the susceptor tray cover has an inlet and an outlet and wherein the inlet and outlet provide the opening therein to allow the flow of gas to pass from the source of gas into interior region of the susceptor and then through the interior region and then out of the interior region through the outlet.
In one embodiment, an apparatus is provided for heating a wafer having a semiconductor material is provided comprising: a chamber; a source of radiant heat; a source of gas; and a susceptor disposed in the chamber susceptor and disposed to receive and absorb heat radiated by the source of radiant heat. The susceptor includes: a susceptor tray, such susceptor tray having a wafer support portion for supporting the wafer; and a susceptor tray cover. The susceptor tray cover is disposed over the wafer support portion. The susceptor tray cover has an inlet and an outlet and wherein the inlet receives a flow of gas from the source of gas, wherein the flow of gas received by the inlet passes between the susceptor tray and the susceptor tray cover through an interior region the susceptor and then exits the interior region.
In one embodiment, an apparatus is provided for heating a wafer having a semiconductor material. The apparatus includes: a chamber; a source of radiant heat; a source of gas; a susceptor disposed in the chamber to receive and absorb heat radiated by the source of radiant heat with the wafer disposed within the susceptor; the susceptor having an opening therein to allow a flow of gas to pass from the source of gas into the susceptor and then over the wafer while heat absorbed by the susceptor is transferred to the wafer.
In one embodiment, the susceptor has a susceptor tray, such susceptor tray having a wafer support portion for supporting the wafer; and a susceptor tray cover; and wherein the wafer is disposed on the wafer support portion and the susceptor tray cover is disposed over the wafer.
In one embodiment, the susceptor tray cover is disposed on the susceptor tray.
In one embodiment, the susceptor includes: a standoff for supporting the susceptor tray cover over the susceptor tray providing a space between the susceptor tray cover and the susceptor tray; and wherein the space provides the opening to allow the flow of gas to pass from the source of gas into the susceptor and then over the wafer while heat absorbed by the susceptor is transferred to the wafer.
In one embodiment, the susceptor tray cover has an inlet and an outlet and wherein the inlet and outlet provide the opening therein to allow the flow of gas to pass from the source of gas into the susceptor and then over the wafer while heat absorbed by the susceptor is transferred to the wafer.
In one embodiment, an apparatus is provided for heating a wafer having a semiconductor material. The apparatus includes: a chamber, a source of radiant heat; a source of gas; and a susceptor disposed in the chamber susceptor. The susceptor includes: a susceptor tray, such susceptor tray having a wafer support portion for supporting the wafer; and a susceptor tray cover. The susceptor tray cover is disposed over the wafer support portion to receive and absorb heat radiated by the source of radiant heat. The susceptor tray cover has an inlet and an outlet. The inlet receives a flow of gas from the source of gas and channels the received gas flow of gas between the susceptor tray and the susceptor tray cover through an interior region of the susceptor over the wafer while heat absorbed by the susceptor is transferred to the wafer and then channels the flow of gas, after passing over the wafer, to the outlet.
In one embodiment, a method is provided for heating a wafer having a semiconductor material. The method includes: providing a susceptor having an opening therein to allow a flow of gas to pass through an interior region of the susceptor, placing the wafer in the interior region of the susceptor, and passing a flow of gas through the interior region of the susceptor while the susceptor absorbs heat radiated by the source of radiant heat and while the absorbed heat is transferred to the wafer.
In one embodiment, the susceptor has a susceptor tray, such susceptor tray having a wafer support portion for supporting the wafer; and a susceptor tray cover; and wherein the wafer is disposed on the wafer support portion and the susceptor tray cover is disposed over the wafer, and wherein the interior region is between the susceptor tray and the susceptor tray cover.
In one embodiment, the semiconductor material has a metal on a surface portion of the semiconductor material and wherein the heating of wafer produces an ohmic contact between the metal and the surface portion of the semiconductor material.
In one embodiment, a susceptor is provided having an opening therein to allow a flow of gas to pass into an interior region of the susceptor and then over a wafer having a semiconductor material.
In one embodiment, the susceptor includes: a susceptor tray having a recessed wafer support portion disposed in an inner region of the susceptor tray for supporting the wafer; and a susceptor tray cover disposed on an outer region of the susceptor tray.
In one embodiment, a standoff is provided for supporting the susceptor tray a predetermined, finite distance over the susceptor cover.
In one embodiment the susceptor cover has a gas flow inlet to pass the gas into an interior region of the susceptor and a gas flow outlet laterally displaced from the gas flow inlet for exiting gas from the interior region of the susceptor
The inventors have recognized that because the transfer of the wafer to the interior of a closed susceptor takes place outside of the RTA chamber, ambient air can become trapped inside the closed, wafer holding, susceptor and that with present totally enclosed susceptor such as that shown in
More particularly, the inventors have discovered that, when using a wafer with Gallium Nitride (GaN) semiconductor material and trying to form an ohmic contact with it by alloying a stack of Tantalum (Ta), Aluminum (Al) and Tantalum (Ta) with the semiconductor material in an enclosed susceptor such as shown in
The details of one or more embodiments of the disclosure are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the disclosure will be apparent from the description and drawings, and from the claims.
Like reference symbols in the various drawings indicate like elements.
Referring now to
Referring first to the graphite susceptor tray 12, shown in
Referring again to
Next, the susceptor 10, with the wafer 18 on the susceptor tray wafer support portion 16 and with the susceptor tray cover 14 on the tray 12, is inserted into an RTA chamber 24, through a door 26 of the RTA chamber 24, as shown in
Referring to
Referring now to
Referring to
Next, the susceptor 10″, with the wafer 18 on the susceptor tray wafer support portion 16 and with the standoffs 40 of the susceptor tray cover 14″ on the tray 12, is inserted into an RTA chamber 24, through a door 26 of the RTA chamber 24, as shown in
A number of embodiments of the disclosure have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the disclosure. For example, other materials may be used for the susceptors 10, 10′ and other gases, such as Argon, that will not adversely affect the ohmic contact alloying process may be used. Accordingly, other embodiments are within the scope of the following claims.
This Application is a continuation of prior application Ser. No. 15/219,859, filed Jul. 26, 2016, which application is hereby incorporated herein by reference in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
4927991 | Wendt et al. | May 1990 | A |
5585027 | Young | Dec 1996 | A |
6035100 | Bierman | Mar 2000 | A |
6093252 | Wengert | Jul 2000 | A |
6342691 | Johnsgard et al. | Jan 2002 | B1 |
6339510 | Riley et al. | Jun 2002 | B1 |
6476368 | Aronsson et al. | Nov 2002 | B2 |
6861321 | Keeton | Mar 2005 | B2 |
6905983 | Itani | Jun 2005 | B2 |
7525075 | Watkins et al. | Apr 2009 | B1 |
9066375 | Lafferty | Jun 2015 | B2 |
20020083899 | Komeno | Jul 2002 | A1 |
20020195437 | Kusuda | Dec 2002 | A1 |
20030107865 | Masuda et al. | Jun 2003 | A1 |
20040108519 | Itani | Jun 2004 | A1 |
20040149715 | Timans | Aug 2004 | A1 |
20050258162 | Kusuda | Nov 2005 | A1 |
20060102081 | Ueno et al. | May 2006 | A1 |
20060225657 | Mizushima | Oct 2006 | A1 |
20060249078 | Nowak | Nov 2006 | A1 |
20070291818 | Yasuda | Dec 2007 | A1 |
20080190909 | Yokouchi | Aug 2008 | A1 |
20080219824 | Newman | Sep 2008 | A1 |
20080273867 | Camm | Nov 2008 | A1 |
20090184109 | Sawada | Jul 2009 | A1 |
20090274454 | Aderhold | Nov 2009 | A1 |
20090323756 | Tenzek | Dec 2009 | A1 |
20100092697 | Poppe | Apr 2010 | A1 |
20100092698 | Poppe | Apr 2010 | A1 |
20100107974 | Givens | May 2010 | A1 |
20100111513 | Nishihara | May 2010 | A1 |
20100111648 | Tamura | May 2010 | A1 |
20100181024 | White | Jul 2010 | A1 |
20100285629 | Suzuki | Nov 2010 | A1 |
20100307686 | Iizuka | Dec 2010 | A1 |
20110067632 | Poppe | Mar 2011 | A1 |
20110277688 | Trujillo | Nov 2011 | A1 |
20110277690 | Rozenzon | Nov 2011 | A1 |
20120085752 | Rinaldi | Apr 2012 | A1 |
20120133089 | Kobayashi | May 2012 | A1 |
20120187083 | Hashizume | Jul 2012 | A1 |
20120238110 | Yokouchi | Sep 2012 | A1 |
20130109192 | Hawkins | May 2013 | A1 |
20130193132 | Serebryanov | Aug 2013 | A1 |
20140127368 | Lafferty | May 2014 | A1 |
20140263268 | Cong | Sep 2014 | A1 |
20150007774 | Iwasaki et al. | Jan 2015 | A1 |
20150037019 | Collins | Feb 2015 | A1 |
20150162230 | Bautista | Jun 2015 | A1 |
20150206786 | Serebryanov | Jul 2015 | A1 |
20150226485 | Steinlage et al. | Aug 2015 | A1 |
20160079085 | Aoyama | Mar 2016 | A1 |
20160133504 | Chu | May 2016 | A1 |
20160141175 | Yan | May 2016 | A1 |
20170194163 | Cosceev | Jul 2017 | A1 |
20170213759 | Ma | Jul 2017 | A1 |
20170221715 | Tanimura | Aug 2017 | A1 |
20180254224 | Kitazawa | Sep 2018 | A1 |
20190157168 | Kawarazaki | May 2019 | A1 |
20190267250 | Tanimura | Aug 2019 | A1 |
20200243402 | Kawarazaki | Jul 2020 | A1 |
Entry |
---|
U.S. Patent Application of Kezia Cheng, et al., U.S. Appl. No. 15/219,859, filed Jul. 26, 2016, 19 pages. |
Number | Date | Country | |
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Parent | 15219859 | Jul 2016 | US |
Child | 15495190 | US |