The description herein relates to charged particle detection, and more particularly, to systems and methods that may be applicable to charged particle beam detection using charged particle counting.
Detectors may be used for sensing physically observable phenomena. For example, charged particle beam tools, such as electron microscopes, may comprise detectors that receive charged particles projected from a sample and that output a detection signal. Detection signals can be used to reconstruct images of sample structures under inspection and may be used, for example, to reveal defects in the sample. Detection of defects in a sample is increasingly important in the manufacturing of semiconductor devices, which may include large numbers of densely packed, miniaturized integrated circuit (IC) components. Dedicated inspection tools may be provided for this purpose. For example, a microscopy system using a scanning electron microscope (SEM) may use an electron beam to scan across a sample and derive information from backscattered or secondary electrons generated from the sample.
With continuing miniaturization of semiconductor devices, inspection systems may use lower and lower electron beam currents. As beam current decreases, maintaining signal-to-noise ratio (SNR) becomes even more difficult. To address this issue, electron counting may be used to count individual electron arrival events occurring at a detection cell in a sampling period. However, electron counting may face issues such as error when counting electrons in some situations.
Embodiments of the present disclosure provide systems and methods for detection based on charged particle beams. In some embodiments, there may be provided a method of determining a number of charged particles incident on a detector within a period. The method may include generating a first signal that is based on a charged particle impacting a sensing element of the detector. The method may include performing processing using the first signal based on a predetermined characteristic of a charged particle arrival event on the detector. The method may include outputting a count signal based on the processing.
In some embodiments, there may be provided a circuit for a charged particle detector including a component configured to generate a first signal that is based on a charged particle impacting a sensing element of the charged particle detector within a period. The circuit may include a compensator configured to process the first signal based on a predetermined characteristic of a charged particle arrival event on the detector.
In some embodiments, there may be provided a method of adjusting power consumption of a detector including determining a parameter of a component of the detector based on a first type of error, and compensating for the first type of error based on a predetermined characteristic of a charged particle arrival event on the detector.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosed embodiments, as may be claimed.
The above and other aspects of the present disclosure will become more apparent from the description of exemplary embodiments, taken in conjunction with the accompanying drawings.
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the drawings. The following description refers to the accompanying drawings in which the same numbers in different drawings represent the same or similar elements unless otherwise represented. The implementations set forth in the following description of exemplary embodiments do not represent all implementations consistent with the invention. Instead, they are merely examples of apparatuses, systems, and methods consistent with aspects related to subject matter that may be recited in the appended claims.
Electronic devices are constructed of circuits formed on a piece of silicon called a substrate. Many circuits may be formed together on the same piece of silicon and are called integrated circuits or ICs. With advancements in technology, the size of these circuits has decreased dramatically so that many more of them can fit on the substrate. For example, an IC chip in a smart phone can be as small as a fingernail and yet may include over 2 billion transistors, the size of each transistor being less than 1/1,000th the size of a human hair.
Making these extremely small ICs is a complex, time-consuming, and expensive process, often involving hundreds of individual steps. Errors in even one step have the potential to result in defects in the finished IC, rendering it useless. Thus, one goal of the manufacturing process is to avoid such defects to maximize the number of functional ICs made in the process, that is, to improve the overall yield of the process.
One aspect of improving yield is monitoring the chip making process to ensure that it is producing a sufficient number of functional integrated circuits. One way to monitor the process is to inspect the chip circuit structures at various stages of their formation. Inspection can be carried out using a scanning electron microscope (SEM). A SEM can be used to image these extremely small structures, in effect, taking a “picture” of the structures. The image can be used to determine if the structure was formed properly and also if it was formed in the proper location. If the structure is defective, then the process can be adjusted so the defect is less likely to recur.
An image of a wafer may be formed by scanning a primary beam of a SEM system over the wafer and collecting particles (e.g., secondary electrons) generated from the wafer surface at a detector. The process of imaging may include focusing the primary beam to a point, and deflecting (e.g., bending) the beam so that it passes over regions of the wafer in a line-by-line pattern (e.g., a raster scan). As the primary beam scans across the sample, secondary particles are generated and collected at the detector. At a given time, the beam may be focused to a particular position on a wafer, and output of the detector at this time may be correlated to that particular position on the wafer. An image may be reconstructed based on detector output at each time along the beam scan path.
Charged particles landing on a sensing element of the detector may cause an electrical signal to be generated in a circuit connected to the sensing element. In a typical detection system (e.g., an analog signal detection system), the overall intensity of the beam of particles landing on the sensing element is used as the detection signal. The more intense the beam of particles landing on the detector, the larger the detection signal. However, detection systems using overall beam intensity may face issues with accuracy and sensitivity at low levels of beam current. For example, related art detectors may have poor signal-to-noise ratio (SNR), particularly when only a few particles are intermittently landing on the detector rather than a large stream of particles. The raw signal representing beam intensity may be too low and indistinguishable from noise.
An alternative way to detect charged particles is to count individual arrival events. Rather than detecting a signal level representing the strength of a beam incident on a detector, the detector may record individual charged particle arrival events and add them up to determine a total number of particles that may be correlated with strength of the beam. Charged particle counting may improve sensitivity and accuracy at low beam currents and may allow simpler and smaller components to be packaged on a chip relative to, for example, analog signal detection systems, thus allowing robust and reliable detection of charged particles with good SNR. In an exemplary system, when an electron arrives at a sensing element, the circuit connected to the sensing element may generate a signal pulse, and the circuit may detect that an electron arrival event has occurred. While the present disclosure discusses some exemplary embodiments in the context of electrons (e.g., electron counting), it will be understood that the present disclosure may be applicable to other types of charged particles, such as ions.
To help ensure accurate electron counting, a detector should be able to discriminate electron arrival events occurring in close succession. However, issues may be encountered such as the following. First, there may be error related to overlap between subsequent signal pulses. Second, there may be noise-related error that may occur when a circuit of the detector cannot discriminate between noise and the actual pulse associated with an electron arrival event. The first type of error may be referred to as “inter-symbol interference” (ISI) and may be related to signals that are close to one another in time becoming merged due to the speed of the detector being too low.
Addressing the issues above may involve tradeoff relationships with contradicting requirements. For example, decreasing the first type of error (ISI) by increasing speed of detector components (e.g., bandwidth of a preamplifier) may result in increasing the second type of error (noise), thus defeating the purpose of increasing the speed. To counteract this, noise in detector components may be decreased by increasing power consumption of the components, but increased power consumption may lead to other undesirable effects, such as the need for additional heat management measures. Power consumption may become increasingly important as a detector is divided (e.g., pixelated) into an array of multiple smaller detector cells, each requiring its own readout circuit. Thus, it would be desirable to achieve an electron counting detector with high accuracy while maintaining low power consumption, for example without having to use high bandwidth components consuming high power. In particular, a transimpedance amplifier that may be included in a preamplifier may consume significant power, and thus, it would be desirable to limit power consumption of such a component.
Embodiments of the disclosure may address the above issues by relaxing certain constraints on system design. For example, low speed components may be intentionally used such that noise is minimized. Components may be configured to minimize noise, for example, by operating with relatively low speed (e.g., low bandwidth). Components having relatively low speed may lead to higher ISI-type error. This ISI-type error may then be addressed by using a circuit that accounts for ISI, and without significantly increasing power consumption.
ISI may be addressed by using information about the characteristics or behavior of electron arrival events on a sensing element of a detector. For example, the shape of a signal pulse caused by an electron arrival event may be known in advance. It may be expected that the signal pulse will rise and fall over a time period according to certain parameters. This behavior may affect determinations regarding counting of electrons. In some embodiments, a circuit may be configured to make determinations in consideration of the predictable behavior of an electron arrival event. The circuit may compare the level of signal coming from the sensing element to multiple thresholds. In some embodiments, a circuit may modify a signal coming from the sensing element based on known or predictable behavior of electron arrival events. The multiple thresholds or modification of signal may compensate for ISI error that may be caused due to another component being optimized for noise reduction, for example.
A detector may be configured to have a pixelated array of individual sensing elements. Each of the sensing elements may be sized such that no more than a certain number of electrons is received in the area of the sensing element per sampling period. The certain number may be one. The size of the sensing element may be smaller than a geometric spread of electrons incident on the detector. Thus, an individual sensing element may be configured to receive fewer electrons than the total number of electrons incident on the detector. According to various criteria, aspects of the detector may be set so as to accommodate electron counting, such as a size of sensing elements, sampling rate, and other characteristics. Because electron arrival events may involve a stochastic process (e.g., involving some randomness), the sensing element may be expected to receive no more than the certain number of electrons in a sampling period with a certain level of confidence (e.g., 95%). Each sensing element may be connected to a circuit for reading out and processing data.
A circuit connected to a sensing element of the detector may be configured to determine whether an electron arrival event has occurred. There may be parameters of the circuit (e g , channel speed) that are used to determine other parameters. The circuit may include a preamplifier that transforms a current signal from the sensing element to a voltage signal. The preamplifier may have a speed associated with it. A preamplifier may be configured to have a relatively low bandwidth (and thus, low speed) such that noise is minimized at the expense of ISI-related error. ISI-related error may then be addressed by other components of the circuit. For example, an ISI cancelling discriminator may be provided. The ISI cancelling discriminator may compare the voltage signal from the preamplifier to an adjustable threshold that may be adjusted based on behavior of electron arrival events. Although further components may be involved (e.g., a comparator using multiple thresholds), the power consumption associated with these using further components may be substantially less than that associated with increasing the power consumption of the preamplifier to reduce both noise-related and ISI-related error. Thus, some embodiments may provide for a detector configured to detect low-energy particle with a low error rate and using low power to allow for a high amount of pixelization.
Objects and advantages of the disclosure may be realized by the elements and combinations as set forth in the embodiments discussed herein. However, embodiments of the present disclosure are not necessarily required to achieve such exemplary objects or advantages, and some embodiments may not achieve any of the stated objects or advantages.
Without limiting the scope of the present disclosure, some embodiments may be described in the context of providing systems and methods in systems utilizing electron beams (“e-beams”), particularly with regard to scanning electron microscopy (SEM) systems. However, the disclosure is not so limited. Other types of charged particle beams may be similarly applied. Additionally, charged particle beam may be used in transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), and the like. Furthermore, systems and methods related to detection may be used in other imaging systems, such as optical imaging, photon detection, x-ray detection, ion detection, etc. Additionally, the term “beamlet” may refer to a constituent part of a beam or a separate beam extracted from an original beam. The term “beam” may refer to beams or beamlets.
As used herein, unless specifically stated otherwise, the term “or” encompasses all possible combinations, except where infeasible. For example, if it is stated that a component includes A or B, then, unless specifically stated otherwise or infeasible, the component may include A, or B, or A and B. As a second example, if it is stated that a component includes A, B, or C, then, unless specifically stated otherwise or infeasible, the component may include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.
Reference is now made to
As shown in
A diode, such as a photodiode or PIN diode, may be well suited for use in electron counting. A diode may have high natural internal gain, and thus, even in the case of a single electron arrival event, a strong, measurable signal may be generated that is easily distinguishable against a relatively low floor level of background noise. The need to provide an amplifier or complex systems on a chip, such as avalanche diodes, to boost the signal may be reduced or eliminated. Instead, a signal generated from a diode by itself or with a relatively low-gain amplifier may be well suited for electron counting because it is generated quickly in response to an electron arrival event and stands out against background noise. Furthermore, a diode may be easily segmented.
Detector 101 may be configured such that individual sensing elements are sized to receive no more than a certain number of charged particles its area during a sampling period. The detection area of detector 101 may be divided into an array of smaller-area diode elements. Each of the diode elements may correspond to a discrete detection cell. A diode may be pixelated into separate detection cells in various forms. For example, semiconductor detection cells may be divided by virtue of internal fields generated due to internal structures. Furthermore, in some embodiments, there may be physical separation between adjacent sensing elements. That is, in some embodiments, a detector array may be provided with sensing elements that are physically spaced apart from one another. There may be some isolation area provided between adjacent sensing elements.
Size of individual sensing elements may be determined based on various parameters or imaging conditions of a charged particle beam apparatus. For example, a charged particle beam apparatus may be configured to use a primary beam with a certain current level. Current of the beam may be manipulated by apertures or lenses of the charged particle beam apparatus. With a particular beam current, it may be determined that a certain maximum number of charged particles will be incident on a detector. Furthermore, a geometric spread of charged particles incident on the detector may be determined, with some regions having higher distributions of particles. Sensing elements of a detector array may be sized such that it may be ensured with a certain level of confidence that each sensing element will not receive more than a certain number of charged particles in a sampling period. The certain number may be one.
Referring to
Each sensing element of detector 101 may be provided with a corresponding circuit. For example, the architecture of
Reference is now made to
Reference is now made to
Diode 300 may include a semiconductor layer 330. Semiconductor layer 330 may include a shallow p+ region 331 and an n epilayer 332. There may be provided a terminal 310 and a contact 320. In operation of a charged particle beam apparatus, primary electron beam 350 may be projected onto sample 390, and secondary particles that may include a backscattered electron 351 may be directed from sample 390 to diode 300. Diode 300 may be configured such that an incoming electron, such as backscattered electron 351, generates electron-hole pairs 360 in semiconductor layer 330. Numerous electron-hole pairs 360 may be generated due to a mechanism triggered by the arrival of an incoming electron, such as impact ionization. Electrons of electron hole pairs 360 may flow to terminal 310 and may form a current pulse in response to the incoming electron arriving at diode 300.
In some embodiments of the disclosure, characteristics of a charged particle arrival event may be used to compensate for error effects. Characteristics of a charged particle (e.g., electron) arrival event may include behavior of a current pulse formed in response to an electron arrival event. Behavior of the current pulse may depend on various parameters of the incoming charged particle, a sensing element receiving the charged particle, or a circuit connected to the sensing element. For example, behavior of a current pulse generated by diode 300 may depend on structure of diode 300 (e.g., its thickness) and on operating conditions (e.g., applied excitation). A bias voltage VB may be applied to diode 300 via terminal 310.
As shown in
Input stage 510 may be connected to discriminator 520. Discriminator 520 may include a compensator. The compensator may be configured to compensate for error effects, such as ISI-related error. The compensator may be configured to use information based on known characteristics of electron arrival events. Discriminator 520 may be configured to make a determination based on signal 511 and output a signal 521. Discriminator 520 may be configured to receive an analog signal and output a digital signal. Discriminator 520 may include a voltage comparator. When input voltage crosses a threshold, discriminator 520 may output a binary signal. For example, discriminator 520 may be configured to compare signal 511 to a fixed threshold (VTH), and when signal 511 exceeds VTH, discriminator 520 may output a binary “1” signal. In some embodiments, discriminator 520 may use an adjustable threshold. There may be multiple thresholds that are used. Discriminator 520 may be configured to indicate the detection of one electron. Discriminator 520 may be configured to generate a counting signal that is used for counting electrons.
As shown in
In some embodiments, different models of signal pulse behavior may be used. For example, a signal pulse may have a long tail with more than 2 intermediary signal levels before falling back down to 0. Furthermore, in some embodiments, signal level may fall below a baseline level (the baseline corresponding to the level before the signal pulse; e.g., 0) a certain time after a peak. Models of signal pulse behavior may be based on experimental results or simulation, for example.
Reference is now made to
As shown in
Sensor 600 may be configured to generate a signal 601 in response to receiving an incoming charged particle 650. Sensor 600 may include a diode, such as a PIN diode. Preamplifier 620 may be configured to receive signal 601 and output signal 621. Gain unit 630 may be configured to amplify an input signal, transforming it into an amplified signal. Signal 621 may include a voltage pulse and signal 631 may include an amplified voltage pulse.
Gain unit 630 may be connected to digitizer 640. Digitizer 640 may be configured to digitize an input signal. Digitizer 640 may include an analog-to-digital converter (ADC), a time-to-digital converter (TDC), or binary discriminator (e.g., comparator or slicer), etc. Digitizer 640 may make a determination based on signal 631 and may output a signal 641. Digitizer 640 may be configured to receive an analog signal and output a digital signal. Output of digitizer 640 may include a “1” or “0”, with “1” corresponding to a charged particle arrival event occurring and “0” corresponding to no charged particle arrival event occurring. Digitizer 640 may include a voltage comparator. Digitizer 640 may include a compensator.
Performance of a detection system may relate to parameters such as signal-to-noise ratio (SNR), bandwidth, and power consumption. Some parameters, such as SNR and bandwidth, may affect error rate of the detection system. Performance of the detection system may depend on performance of individual components of the detection system. For example, in some embodiments, SNR and bandwidth may depend primarily on properties of a preamplifier.
In some embodiments, parameters of a detection system may be interlinked. Relationships between parameters of a detection system may include a tradeoff relationship. For example, bandwidth and noise may be interlinked. That is, as bandwidth is altered, noise may also be affected. Furthermore, in an application such as charged particle (e.g., electron) counting, parameters of the detection system may be related to properties of charged particles and their interaction with the detection system. For example, parameters of the detection system may be related to charged particle separation time (e.g., the period between subsequent electron arrival events). Charged particle arrival events may involve a stochastic process, and separation time may be variable. In some embodiments, the interval between charged particle arrival events may be represented by an average separation time, and there may be a level of confidence associated with the value of average separation time.
In some embodiments, a detection system may be configured for electron counting. To enhance the ability of a detection system to achieve electron counting, the detection system may be configured to discriminate electron arrival events occurring in close succession. Electron arrival events may be represented by a signal pulse. If a detection system is unable to properly discriminate signal pulses, such as two signal pulses occurring in close succession, a counting error may occur, affecting the error rate of the detection system. Error may be related to, for example, noise and effects arising from closeness or overlap between subsequent signal pulses. Noise-related error that may occur when a detection system cannot discriminate between noise and the actual pulse associated with an electron arrival event. Effects arising from closeness or overlap between subsequent signal pulses may include “inter-symbol interference” (ISI). ISI may be related to signals that are close to one another in time becoming merged due to a speed of the detection system. In some embodiments, the speed of the detection system may be primarily determined by the bandwidth of a component of the detection system, such as a preamplifier. ISI may depend on properties of the detection system, properties of the charged particles, and their interaction.
As shown in
As shown in
As shown in
Furthermore, a further electron arrival event may occur, and signal level may begin to rise before it has fully fallen to a baseline level. Thus, a 0 level may be distorted due to ISI. Thereafter, signal level may rise to a higher peak in response to the further electron arrival event. This peak may be distorted due to ISI. For example, the peak may reach a level 1010 that is different from that of the first peak. In some embodiments, ISI effects may be reduced by increasing bandwidth. For example, distortion as seen in waveform 910 in
Some embodiments of the disclosure may aim to achieve a high detection rate using low power. A detection system may be provided with low-bandwidth components, such as a preamplifier, and may use a compensator configured to cancel effects of ISI. The detection system may include a discriminator that incorporates the compensator. While the use of low-bandwidth components may cause ISI-related error, a compensator configured to cancel effects of ISI may alleviate such error and enhance the performance of a detection system. Relative to a comparative detection system, a preamplifier may be intentionally slowed down to minimize noise without increasing power consumption. Distortion effects that may result from the slowed down preamplifier may be corrected by using a compensator. A detection system may be achieved with enhanced accuracy and low power consumption.
Reference is now made to
Similar to the detection systems of
As shown in
A circuit included in detection system 1200 may be configured such that a signal 1211 is generated in response to receiving incoming charged particle 1260 at sensor 1210. Input stage 1220 may be configured to receive signal 1211 and output signal 1221. Signal 1221 may be affected by ISI. For example, as shown in
Input stage 1220 may be connected to discriminator 1230. Discriminator 1230 may include a compensator. Discriminator 1230 may be configured to perform processing using signal 1221 based on characteristics of a charged particle arrival event. For example, discriminator 1230 may be configured to compensate for ISI effects using a characteristic of charged particles arriving on sensor 1210. The characteristic may be known in advance and may include, for example, behavior of signal pulses generated in detection system 1200 from charged particle arrival events. Discriminator 1230 may be configured to receive signal 1221 and output signal 1231. Signal 1231 may be a digital signal. Discriminator 1230 may be configured to make a determination based on signal 1221 and may output signal 1231 based on the determination. Signal 1231 may include a count signal or a precursor signal that may be used for counting charged particle arrival events. For example, a count of charged particle arrival events may be determined using signal 1231 output from discriminator 1230.
Discriminator 1230 may include a comparator. Discriminator 1230 may be configured to compare signal 1221 to a reference 1250. Reference 1250 may include an adjustable (e.g., dynamic) threshold. One or more fixed thresholds may be provided, and the thresholds may be different from one another. For example, reference 1250 may include a first threshold VTH1 and a second threshold VTH2. In some embodiments, one or both of first threshold VTH1 and second threshold VTH2 themselves are dynamically adjustable, while in other embodiments one or both are fixed. Discriminator 1230 may be configured to switch between first threshold VTH1 and second threshold VTH2. Switching between the thresholds may be based on signal 1231. A feedback loop 1240 may be provided. Feedback loop 1240 may be included in a compensator. Feedback loop 1240 may control a first switch 1251 and a second switch 1252. Feedback loop 1240 may be configured to perform processing using signal 1221 or signal 1231. For example, feedback loop 1240 may be configured to perform compensation using signal 1231 that is based on signal 1221. Feedback loop 1240 may actuate switches 1251, 1252 based on signal 1231.
In some embodiments, discriminator 1230 may be configured to be operable between a plurality of states. In a first state, first switch 1251 may be closed and discriminator 1230 may use first threshold
VTH1. Discriminator 1230 may compare signal 1221 to first threshold VTH1 and make a determination based on the comparison. If signal level of signal 1221 crosses first threshold VTH1 (e.g., signal rises above first threshold VTH1), discriminator 1230 may output a “1” as signal 1231, indicating that an electron arrival event has occurred. Otherwise, discriminator 1230 may be configured to output “0” as signal 1231. Detection system 1200 may be configured to start operation from the first state.
Feedback loop 1240 may also make a determination based on signal 1231. Feedback loop 1240 may be configured to actuate switches based on signal 1231, or other information. In response to a “1” being included in signal 1231 while detection system 1200 is in the first state, feedback loop 1240 may be configured to open first switch 1251 and to close second switch 1252.
In a second state, second switch 1252 may be closed and discriminator 1230 may use second threshold VTH2. Discriminator 1230 may compare signal 1221 to second threshold VTH2 and make a determination based on the comparison. If signal level of signal 1221 crosses second threshold VTH2 (e.g., signal rises above second threshold VTH2), discriminator 1230 may output a “1” as signal 1231, indicating that an electron arrival event has occurred. Otherwise, discriminator 1230 may be configured to output “0” as signal 1231.
Thus, feedback loop 1240 may be configured to adjust reference 1250. Discriminator 1230 may be configured to compare signal 1221 to reference 1250, and to output signal 1231 based on such comparison, and feedback loop 1240 may be configured to adjust reference 1250 based on signal 1231. Feedback loop 1240 may be configured to make determinations based on a predetermined characteristic of a charged particle arrival event. For example, determination of whether to adjust reference 1250, and whether to do so in a particular time period, may be based on an expected signal pulse shape of a charged particle arrival event in detection system 1200.
In some embodiments, feedback loop 1240 may be configured to reset reference 1250 after a predetermined number of time periods. For example, feedback loop 1240 may be configured to adjust reference 1250 back to first threshold VTH1 after one or more clock cycles of being at second threshold VTH2. The predetermined number of time periods may be based on the predetermined characteristic of the charged particle arrival event. For example, it may be known that a signal pulse has a residual level of signal within a time period after a peak. As shown in
In some embodiments, discriminator 1230 may be configured to output “0” as signal 1231 in a next time period (e.g., the next clock cycle) after outputting “1” as signal 1231 unless it is determined that signal level of signal 1221 crosses second threshold VTH2.
Detection system 1200 may be an example of a double reference readout. Detection system 1200 may take advantage of a predictable waveform shape of current pulses that may be generated by a sensing element (e.g., a diode) and its associated circuit in response to a charged particle arrival event. Detection system 1200 may be configured to cancel distortion related to ISI effects. Current pulses generated in response to charged particle arrival events may be a function of parameters of a sensor or the sensor's associated circuit. For example, current pulses may be a function of a diode's thickness and bias voltage. Such parameters (e.g., diode thickness and applied bias voltage) may have trade off relationships with other parameters, such as the diode's capacitance and thus parameters may be readily manipulated to optimize circuit performance. For example, for a sampling period of 2.5 ns, a diode may be configured to provide a 1.8 ns wide pulse with 90 nA of current. A detection system may be configured to be compatible with the sampling period without significantly increasing input capacitance. In some embodiments, a diode may be configured to provide a signal pulse with a width that is a factor of a sampling period or clock speed of another component of the detection system (e.g., a preamplifier). As used herein, the phrase “a diode configured to provide a signal pulse with a width,” etc., may refer to a diode and its associated circuit (or some other component of a detection system) being configured to provide a response to a charged particle arrival event in the form of a signal pulse that may be transmitted through the detection system.
As shown in
As shown in
Upon determining at time t2 that reference 1250 has been exceeded, reference 1250 may be adjusted to second threshold VTH2. At a next sampling point, e.g., at time t3, the component may determine that signal level does not exceed reference 1250 and may output a signal of “0.” In the time period between t2 and t3, input and output may again be in agreement. The non-occurrence of a charged particle arrival event may be accurately detected.
As shown in
Furthermore, as shown in
At a time period between t4 and t5 in
Selection of parameters for a detection system may be based on a minimum separation time between subsequent charged particle arrival events that is expected for the particular detection system operating with particular operating conditions (e.g., beam current). For example, parameters may be selected based on a separation time with a predetermined level of confidence. Furthermore, a detection system may be optimized to suit a compensator included in the detection system in consideration of operating conditions. For example, bandwidth of a preamplifier may be optimized based on a compensator that includes a double-reference (e.g., using VTH1 and VTH2). In consideration that VTH2 may be selected such that compensator 1230 is configured to detect a “1” input preceded by a “1,” the component (e.g., preamplifier) may be configured to guarantee a consistent shape of waveform, even when subsequent charged particle arrival events occur at or close to the minimum separation time. For example, a detection system may be configured such that subsequent charged particle arrival events do not cause additional ISI beyond second threshold VTH2. Additional ISI may be related to pile-up saturation.
Optimal parameters of a component of a detection system based on ISI compensation may be determined based on additional ISI. For example, as shown in
A detection system including a compensator may enable handling of higher levels of ISI and may relax bandwidth and power requirement of frontend electronics. Thus, an enhancement of the performance of the detection system may be achievable.
In some embodiments, reference 1250 may be adjustable between multiple values. For example, more thresholds may be provided in addition to first threshold VTH1 and a second threshold VTH2. More thresholds may allow for determination of further detailed information relating to charged particle arrival events, such as at what stage a signal pulse may be (e.g., a rising peak, a trailing edge, etc.). Use of further thresholds may enable further flexibility in selecting bandwidth for a preamplifier.
Furthermore, in some embodiments, a range of values may be used for thresholds or signal levels. For example, with reference to
Channel 1710 may be configured with a narrow bandwidth, and there may be some non-zero values of signal that leak into subsequent sampling moments (e.g., post-cursors). Charged particles may arrive randomly at a detector, and there may be times when a time period between arrival events reduces to a level such that, e.g., pile-up may occur. To compensate for pile-up-or-down effects that may result from post-cursors, feedback loop 1740 may use coefficients (including coefficients a1, a2) to subtract out residual signals in a signal pulse.
Embodiments of the disclosure may provide a compensator configured to perform ISI correction. A compensator may use the predictable shape of signal pulses generated from charged particle arrival events and may perform adjustment on an input signal to cancel error effects (e.g., error due to ISI). Some embodiments may enable low-power low-speed electron counting electronics to achieve high-speed and high-accuracy electron detection.
In some embodiments, a characteristic of a charge particle event may correspond to an expected shape of a waveform of a signal pulse generated in response to a charged particle arrival event at a portion of a detector (e.g., a sensing element in a pixelated array). The charged particle may be a secondary or backscattered electron. In some embodiments, incident charged particles on a detector may have different energy. For example, secondary electrons and backscattered electrons may have different landing energy on a detector. Regardless of such energy differences, a signal pulse generated in response to a secondary or backscattered electron arriving at the detector may have exhibit similar behavior. For example, a waveform of a signal pulse from a secondary electron may be substantially the same as that of a backscattered electron. A magnitude of a peak value may be different, but a compensator of a detection system may be configured to compensate for ISI regardless of whether the incident charged particle is a secondary or backscattered electron.
Reference is now may to
As shown in
Step S110 may include a step S111 of transforming a signal from a sensing element to another form. Step S111 may include transforming a current pulse into a voltage pulse. Step S111 may be performed by a preamplifier, such as a transimpedance amplifier. Step S110 may include a step S112 of amplifying a signal. The signal amplified may be a voltage pulse output from a preamplifier. Step S110 may be performed by a gain unit. The first signal may be transformed and amplified and output to another component. The first signal may be generated by a preamplifier. The first signal may be amplified into an amplified signal by a gain unit.
Next, the method may include a step S120 of performing processing using the first signal. Step S120 may include a step S121 of determining compensation. The compensation of step S121 may include ISI distortion compensation. Step S121 may include making a determination that is based on a predetermined characteristic of a charged particle arrival event. For example, it may be determined to compensate the first signal by some value that is based on a shape of a waveform of a signal pulse generated in response to a charged particle arrival event.
Step S120 may include a step S122 of compensating for error. The error compensated for in step S122 may include ISI distortion error. Step S122 may include comparing the first signal to a reference. The reference may be adjustable. Step S122 may be performed by a compensator.
Step S120 may include a step S123 of adjusting compensation. Step S123 may include adjusting the reference used in step S122. Adjusting of compensation in step S123 may be based on the first signal. For example, it may be determined, based on the first signal, that a charged particle arrival event has occurred. Step S123 may include adjusting compensation based on the fact that a charged particle arrival event has occurred. Step S123 may be performed by a feedback loop.
Step S120 may include a step S124 of digitizing using the first signal. Digitizing a signal using the first signal in step S124 may include transforming an analog signal to a digital signal. Step S124 may include generating a binary output. Step S124 may be performed by a digitizer. Step S124 may be performed by a discriminator. A digital signal generated in step S124 may be transmitted to another component. Step S124 may include generating a count signal.
Although
Next, as shown in
The method of
Reference is now may to
In the method of
Step S210 may include a step S211 of determining the parameter (e.g., bandwidth) of the component (e.g., preamplifier) based on a first type of error (e.g., ISI error).
Step S210 may include a step S212 of determining the parameter in a way that is different from step S211. Step S210 may include determining the parameter of the component based on a second type of error (e.g., noise error). There may be a relationship between the first type of error and the second type of error. The first type of error may be interlinked with the second type of error. For example, determining to increase bandwidth a preamplifier to minimize error rate based on ISI may have an effect of increasing error rate based on noise.
Step S211 may include setting the parameter in consideration of a minimum speed of the detection system. For example, step S211 may include determining the bandwidth of the preamplifier so as to avoid additional ISI errors that may not be addressable with ISI compensation.
Step S210 may include a step S212 of determining the parameter of the component based on a second type of error. The second type of error may be noise error.
Step S210 may include a step S213 of compensating for the first type of error. Step S213 may include compensating for ISI error. Step S213 may be performed by a compensator of a detection system, for example.
Next, a step S221 of further optimizing the parameter may be performed. Step S221 may include optimizing bandwidth of the preamplifier based on conditions achieved by compensating for ISI error. Step S221 may include adjusting power consumption of the component. Step S221 may include optimizing reference 1250. For example, step S221 may include optimizing of the number of thresholds used, or their values (e.g., how many and what values of VTH1, VTH2, etc.). Step S221 may include optimizing thresholds used in the system of
The method of
The embodiments may further be described using the following clauses:
In some embodiments, a controller may control a charged particle beam system. The controller may include a computer processor. The controller may instruct components of the charged particle beam system to perform various functions, such as controlling a charged particle source to generate a charged particle beam, controlling deflectors to deflect beams or beamlets, and controlling components of a secondary imaging system to direct secondary beams of charged particles to a detector. The controller may also perform functions of determining a parameter of a detection system, performing image acquisition, image processing, etc. The controller may comprise a storage that is a storage medium such as a hard disk, cloud storage, random access memory (RAM), other types of computer readable memory, and the like. The controller may communicate with a cloud storage. A non-transitory computer readable medium may be provided that stores instructions for a processor of controller 109 to carry out beam forming, electron counting, power consumption optimizing, or other functions and methods consistent with the present disclosure. Common forms of non-transitory media include, for example, a floppy disk, a flexible disk, hard disk, solid state drive, magnetic tape, or any other magnetic data storage medium, a CD-ROM, any other optical data storage medium, any physical medium with patterns of holes, a RAM, a PROM, and EPROM, a FLASH-EPROM or any other flash memory, NVRAM, a cache, a register, any other memory chip or cartridge, and networked versions of the same.
The block diagrams in the figures may illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer hardware or software products according to various exemplary embodiments of the present disclosure. In this regard, each block in a schematic diagram may represent certain arithmetical or logical operation processing that may be implemented using hardware such as an electronic circuit. Blocks may also represent a module, segment, or portion of code that comprises one or more executable instructions for implementing the specified logical functions. It should be understood that in some alternative implementations, functions indicated in a block may occur out of the order noted in the figures. For example, two blocks shown in succession may be executed or implemented substantially concurrently, or two blocks may sometimes be executed in reverse order, depending upon the functionality involved. Some blocks may also be omitted. For example, step S211 of determining a parameter based on a first type of error and step S212 of determining the parameter based on a second type of error may occur in a predetermined order. It should also be understood that each block of the block diagrams, and combination of the blocks, may be implemented by special purpose hardware-based systems that perform the specified functions or acts, or by combinations of special purpose hardware and computer instructions.
It will be appreciated that the embodiments of the present disclosure are not limited to the exact construction that has been described above and illustrated in the accompanying drawings, and that various modifications and changes can be made without departing from the scope thereof. For example, one or more lenses or other optical components may be added at various points to the particular constructions of exemplary particle-optical system discussed herein. Optical components may be provided for, e.g., magnifying, zooming, and image anti-rotating etc. Optical components may direct charged particles to a detector.
Number | Date | Country | Kind |
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20193504.6 | Aug 2020 | EP | regional |
This application claims priority of International application PCT/EP2021/073316, which was filed on 24 Aug. 2021, which claims priority of EP application 20193504.6, which was filed on 28 Aug. 2020. These applications are incorporated herein by reference in their entireties.
Number | Date | Country | |
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Parent | PCT/EP2021/073316 | Aug 2021 | US |
Child | 18115712 | US |