Claims
- 1. A method of reducing hillocks occurring in the layer of aluminum sputtered onto a substrate consisting essentially of the steps of:
- (a) sputtering aluminum from a target onto the surface of a substrate to deposit a single layer of aluminum on such substrate having a thickness of between 6000-9000.ANG.;
- (b) depositing a single layer of WSi.sub.2 on top of the aluminum layer having a thickness of between 1500-2500.ANG.; and
- (c) sintering the deposited aluminum and WSi.sub.2 layers.
CROSS REFERENCE TO RELATED APPLICATIONS
This is a continuation in part of our earlier filed application Ser. No. 341,266, filed on Apr. 20, 1989 abandoned.
US Referenced Citations (4)
Number |
Name |
Date |
Kind |
3986897 |
McMillan et al. |
Oct 1976 |
|
4012756 |
Chaudhari et al. |
Mar 1977 |
|
4322453 |
Miller |
Mar 1982 |
|
4384301 |
Tasch, Jr. et al. |
May 1983 |
|
Foreign Referenced Citations (5)
Number |
Date |
Country |
0037856 |
Mar 1982 |
JPX |
0231836 |
Dec 1984 |
JPX |
0009169 |
Jan 1985 |
JPX |
0015330 |
Jan 1986 |
JPX |
0208241 |
Sep 1986 |
JPX |
Non-Patent Literature Citations (1)
Entry |
B. Draper et al., "A Hillock-Free . . . Interconnects", 1985, Procs. Second Int'l IEEE VLSI Multilevel Interconnection Conf., Santa Clara, Calif., 6/85, pp. 90-101. |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
341266 |
Apr 1989 |
|