Claims
- 1. A photomask, comprising:
- a first region having a first pattern on a transparent substrate, and
- a second region having a second pattern on said transparent substrate, wherein
- said second pattern consists of a plurality of said first patterns so that it receives the same influence of aberration as said first pattern when irradiated with light.
- 2. The photomask according to claim 1, wherein
- said first region is a region for forming a first semiconductor element, and
- said second region is a region for forming a second semiconductor element.
- 3. The photomask according to claim 1, wherein
- said first region is a region for forming a semiconductor device, and
- said second region is a region for forming a registration accuracy measurement mark for measuring registration accuracy of said semiconductor device.
- 4. The photomask according to claim 1, wherein in said first region, an auxiliary pattern not larger than resolution limit of an exposure light source emitting said exposure light is provided at a position where generation of a sidelobe is likely, in order to suppress generation of said side lobe, by said exposure light passing through said first pattern.
Priority Claims (2)
Number |
Date |
Country |
Kind |
7-160741 |
Jun 1995 |
JPX |
|
8-114746 |
May 1996 |
JPX |
|
Parent Case Info
This application is a divisional of application Ser. No. 08/670,313 filed Jun. 27, 1996 now U.S. Pat. No. 5,892,291.
US Referenced Citations (8)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0 459 737 A2 |
Dec 1991 |
EPX |
44 14 369 A1 |
Oct 1994 |
DEX |
63-260045 |
Oct 1988 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
670313 |
Jun 1996 |
|