Resist composition and pattern forming method using the same

Abstract

A resist composition comprising at least one kind of a nitrogen-containing compound selected from the group consisting of an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group and an ammonium salt compound having a sulfonic acid ester group; and a pattern forming method using the composition.

Description

Claims

1. A resist composition, which comprises: at least one kind of a nitrogen-containing compound selected from the group consisting of an amine compound having a phenoxy group and an ammonium salt compound having a phenoxy group.

2. The resist composition according to claim 1, wherein the at least one kind of the nitrogen-containing compound selected from the group consisting of an amine compound having a phenoxy group and an ammonium salt compound having a phenoxy group has at least one oxyalkylene group between the phenoxy group and the nitrogen atom.

3. The resist composition according to claim 1, wherein the at least one kind of the nitrogen-containing compound is an amine compound having a phenoxy group, andthe amine compound having a phenoxy group is a tertiary amine compound.

4. The resist composition according to claim 1, wherein the at least one kind of the nitrogen-containing compound is an amine compound having a phenoxy group, andthe amine compound having a phenoxy group has a molecular weight of from 300 to 1000.

5. The resist composition according to claim 1, which is a positive resist composition that comprises: (C1) at least one kind of a nitrogen-containing compound selected from the group consisting of an amine compound having a phenoxy group and an ammonium salt compound having a phenoxy group;(B) a compound of which solubility in an alkali developer increases under an action of an acid; and(A) a compound capable of generating an acid upon irradiation with actinic rays or radiation.

6. The resist composition according to claim 5, wherein the (B) compound of which solubility in an alkali developer increases under an action of an acid is a resin having a repeating unit represented by formula (A1) or (A2):

7. The resist composition according to claim 5, wherein the (B) compound of which solubility in an alkali developer increases under an action of an acid is a resin having a repeating unit represented by formula (A3):

8. The resist composition according to claim 5, which comprises: at least one kind of a compound selected from the group consisting of a triarylsulfonium salt of an organosulfonic acid; andat least one kind of a compound selected from the group consisting of a diazodisulfone derivative and an oxime ester of an organosulfonic acid, as the (A) compound capable of generating an acid upon irradiation with actinic rays or radiation.

9. The resist composition according to claim 5, which comprises: at least one kind of a compound selected from the group consisting of a compound capable of generating an organosulfonic acid upon irradiation with actinic rays or radiation; andat least one kind of a compound selected from the group consisting of a compound capable of generating a carboxylic acid or an imide acid upon irradiation with actinic rays or radiation, as the (A) compound capable of generating an acid upon irradiation with actinic rays or radiation.

10. A resist composition, which comprises: at least one kind of a nitrogen-containing compound selected from the group consisting of an amine compound having a sulfonic acid ester group and an ammonium salt compound having a sulfonic acid ester group.

11. The resist composition according to claim 10, wherein the at least one kind of the nitrogen-containing compound selected from the group consisting of an amine compound having a sulfonic acid ester group and an ammonium salt compound having a sulfonic acid ester group has at least one oxyalkylene group between the sulfonic acid ester group and the nitrogen atom.

12. The resist composition according to claim 10, which is a positive resist composition that comprises: (C2) at least one kind of a nitrogen-containing compound selected from the group consisting of an amine compound having a sulfonic acid ester group and an ammonium salt compound having a sulfonic acid ester group;(B) a compound of which solubility in an alkali developer increases under an action of an acid; and(A) a compound capable of generating an acid upon irradiation with actinic rays or radiation.

13. A pattern forming method, which comprises: forming a resist film from a resist composition according to claim 1; andexposing and developing the resist film.