Claims
- 1. A method of manufacturing a semiconductor device, comprising:forming a transparent film, transparent to an exposure light, on a semiconductor substrate; forming an inorganic film as an anti-reflective film element on the transparent film; forming an organic film on the inorganic film; forming a resist film on the organic film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.
- 2. A method of manufacturing a semiconductor device according to claim 1, wherein the inorganic film is a Si film.
- 3. A method of manufacturing a semiconductor device, comprising:forming a transparent film, transparent to an exposure light, on a semiconductor substrate whose surface has steps; making a surface of the transparent film planar; forming an inorganic film as an anti-reflective film element on the transparent film; forming an organic film on the inorganic film; forming a resist film on the organic film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.
- 4. A method of manufacturing a semiconductor device, comprising:forming a transparent film, transparent to an exposure light, on a semiconductor substrate whose surface has steps; polishing the surface of the transparent film by chemical mechanical polishing; forming an inorganic film as an anti-reflective film element on the transparent film; forming an organic film on the inorganic film; forming a resist film on the organic film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.
- 5. A method of manufacturing a semiconductor device, comprising:forming a transparent film, transparent to an exposure light, on a semiconductor substrate; forming an inorganic film as an anti-reflective film element on the transparent film; forming an organic film on the inorganic film; forming a chemically amplified resist film on the organic film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, within the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.
- 6. A method of manufacturing a semiconductor device, comprising:forming a transparent film, transparent to an exposure light, on a semiconductor substrate; forming an inorganic film as an anti-reflective film element on the transparent film; forming an organic film on the inorganic film; forming a resist film on the organic film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the inorganic film absorbs the exposure light.
- 7. A method of manufacturing a semiconductor device, comprising:forming a spin-on-glass film on a semiconductor substrate; forming an inorganic film as an anti-reflective film element on the spin-on-glass film; forming an organic film on the inorganic film; forming a resist film on the organic film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.
- 8. A method of manufacturing a semiconductor device, comprising:providing a semiconductor substrate which has a metal film; forming a transparent film, transparent to an exposure light, on the semiconductor substrate; forming an inorganic film as an anti-reflective film element on the transparent film; forming an organic film on the inorganic film; forming a resist film on the organic film; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.
- 9. A method of manufacturing a semiconductor device, comprising:preparing a semiconductor substrate; forming a transparent film on the semiconductor substrate, the transparent film being transparent to exposure light; forming an inorganic film as an anti-reflective film element on the transparent film; forming an organic film on the inorganic film; forming a resist film on the organic film; detecting a pattern for alignment through the inorganic film by using a detection beam; exposing a pattern onto the resist film, so as to form an exposed resist film; and developing the exposed resist film to form a resist pattern, wherein the inorganic film has a greater extinction coefficient for the exposure light than that of the organic film.
- 10. A method of manufacturing a semiconductor device according to claim 9, wherein the inorganic film is a Si film.
- 11. A method of manufacturing a semiconductor device according to claim 9, wherein the extinction coefficient (imaginary part of refractive index) of the inorganic film, for the exposure light for exposing a pattern onto the resist film, is 2 or greater.
- 12. A method of manufacturing a semiconductor device according to claim 9, wherein the detection beam is light whose wavelength is longer than 540 nm.
- 13. A method of manufacturing a semiconductor device, comprising:providing a body which has a transparent film, transparent to an exposure light, and an anti-reflective film; forming a resist film over the body; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the anti-reflective film absorbs the exposure light and the resist film contacts with a bonding layer.
- 14. A method of manufacturing a semiconductor device according to claim 13, wherein the bonding layer includes an organic material.
- 15. A method of manufacturing a semiconductor device according to claim 13, wherein the body has steps.
- 16. A method of manufacturing a semiconductor device according to claim 13, wherein the transparent film has a planar surface.
- 17. A method of manufacturing a semiconductor device according to claim 13, wherein the resist film is a chemically amplified resist film.
- 18. A method of manufacturing a semiconductor device according to claim 13, wherein the body has a metal film under the transparent film.
- 19. A method of manufacturing a semiconductor device, comprising:providing a body which has a transparent film, transparent to an exposure light, and an anti-reflective film; forming a resist film over the body; detecting a pattern for alignment through the anti-reflective film by using a detection beam; exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device; and developing the exposed resist film, wherein the anti-reflective film absorbs the exposure light and the resist film contacts with a bonding layer.
- 20. A method of manufacturing a semiconductor device according to claim 19, wherein the detection beam is light whose wavelength is longer than 540 nm.
Priority Claims (3)
Number |
Date |
Country |
Kind |
7-030425 |
Feb 1995 |
JP |
|
7-033313 |
Feb 1995 |
JP |
|
7-122150 |
May 1995 |
JP |
|
Parent Case Info
This application is a Continuation application of application Ser. No. 10/054,932, filed Jan. 25, 2002, now U.S. Pat. No. 6,461,776, which is a Continuation application of application Ser. No. 09/849,487, filed May 7, 2001 now U.S. Pat. No. 6,355,400, which is a Continuation application of application Ser. No. 09/664,554, filed Sep. 18, 2000, now U.S. Pat. No. 6,255,036 which is a Continuation application of application Ser. No. 09/440,111, filed Nov. 15, 1999, now U.S. Pat. No. 6,162,588 which is a Continuation application of application Ser. No. 09/285,010, filed Apr. 1, 1999, now U.S. Pat. No. 5,985,517 which is a Continuation application of application Ser. No. 09/159,786, filed Sep. 24, 1998, now U.S. Pat. No. 5,935,765 which is a Continuation application of application Ser. No. 09/021,186, filed Feb. 10, 1998, now U.S. Pat. No. 5,846,693 which is a Continuation application of application Ser. No. 08/601,361, filed Feb. 16, 1996, now U.S. Pat. No. 5,733,712 the contents of which are incorporated herein by reference in their entirety.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5472829 |
Ogawa |
Dec 1995 |
A |
5591566 |
Ogawa |
Jan 1997 |
A |
Foreign Referenced Citations (1)
Number |
Date |
Country |
239230 |
Jan 1995 |
JP |
Continuations (8)
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Number |
Date |
Country |
Parent |
10/054932 |
Jan 2002 |
US |
Child |
10/229216 |
|
US |
Parent |
09/849487 |
May 2001 |
US |
Child |
10/054932 |
|
US |
Parent |
09/664554 |
Sep 2000 |
US |
Child |
09/849487 |
|
US |
Parent |
09/440111 |
Nov 1999 |
US |
Child |
09/664554 |
|
US |
Parent |
09/285010 |
Apr 1999 |
US |
Child |
09/440111 |
|
US |
Parent |
09/159786 |
Sep 1998 |
US |
Child |
09/285010 |
|
US |
Parent |
09/021186 |
Feb 1998 |
US |
Child |
09/159786 |
|
US |
Parent |
08/601361 |
Feb 1996 |
US |
Child |
09/021186 |
|
US |