Scratch-resistant materials and articles including the same

Information

  • Patent Grant
  • 10995404
  • Patent Number
    10,995,404
  • Date Filed
    Tuesday, June 11, 2019
    4 years ago
  • Date Issued
    Tuesday, May 4, 2021
    3 years ago
Abstract
A coating material includes silicon and/or aluminum, hydrogen and any two or more of oxygen, nitrogen, carbon, and fluorine. The coating material exhibits a hardness of about 17 GPa or greater and an optical band gap of about 3.5 eV or greater. The coating material includes, in atomic %, silicon and/or aluminum in an amount of about 40 or greater, hydrogen in an amount in the range from about 1 to about 25, nitrogen in an amount of about 30 or greater, oxygen in an amount in the range from about 0 to about 7.5, carbon in an amount in the range from about 0 to about 10, and optionally, fluorine and/or boron. Articles including the coating material may exhibit an average transmittance of about 85% or greater over an optical wavelength regime in the range from about 380 nm to about 720 nm and colorlessness.
Description
BACKGROUND

The disclosure relates to durable and/or scratch-resistant coating materials and articles including the same, and more particularly to coating materials exhibiting high hardness and a wide optical band gap, and articles including the same.


Transparent substrates are often used in displays in consumer electronic devices such as smart phones and tablets. Other applications are also possible, such as architectural, automotive, appliances and the like. For such uses, the substrate should be abrasion resistant, scratch resistant, and should provide acceptable optical transparency and color point (in transmittance and/or reflectance). In addition, when used in displays, the substrate should minimize light absorption to minimize energy use, thus prolonging the battery life in portable device. The substrate should also exhibit minimum light reflectance so the display is readable in bright, ambient light. Moreover, the transmittance and reflectance should also be optimized so that colors in the display are accurately rendered over a range of viewing angles.


The application of hard coating(s) onto the surface of substrate has been attempted to enhance at least one or more of these desirable properties. Such coatings may be formed using physical vapor deposition (PVD) processes and can include aluminum-based materials such as aluminum nitride, aluminum oxynitride, and silicon aluminum oxynitride. Such materials exhibit high hardness, and optical transparency and colorlessness; however there may be processing limitations associated with such materials.


Known sputtered or PVD-formed silicon-based materials include a hydrogen-free SiNx, which may exhibit a hardness of about 22 gigaPascals (GPa) at stoichiometric N/Si=1.33. Known RF sputtered SiNx films have shown about 93% density and a hardness of about 25 GPa. It should be noted that such sputtered silicon-based materials require long deposition times. Moreover, such materials include less than about 1 atomic % hydrogen and exhibit inferior optical properties.


A recognized alternative is forming durable and/or scratch resistant materials by chemical vapor deposition (CVD), which includes plasma enhanced chemical vapor deposition (PECVD). Accordingly, there is a need for providing durable and/or scratch resistant coating materials that may be formed by a variety of methods including CVD and PECVD methods, and which exhibit high hardness, optical transparency and colorlessness.


SUMMARY

A first aspect of the present disclosure pertains to a coating material that exhibit high hardness and wide optical band gap (e.g., about 3.5 eV or greater). The coating material may include any one or more of silicon, aluminum, nitrogen, oxygen, hydrogen, carbon, boron and fluorine. In one or more specific embodiments, the coating material includes silicon and may be characterized as silicon-based. In some embodiments, the coating material exhibits a Young's modulus of about 150 GPa or greater. The compressive stress of a layer of the coating material may be about −400 megaPascals (MPa) or greater.


In one or more embodiments, the coating material exhibits a maximum hardness of about 17 GPa or greater (or about 19 GPa or greater), as measured by a Berkovich Indenter Hardness Test along an indentation depth of about 50 nm or greater. In one or more embodiments, the coating material exhibits an optical band gap of about 3.5 eV or greater (e.g., in the range from about 3.5 eV to about 5.5 eV). The coating material may exhibit a refractive index at a wavelength of about 632 nanometers (nm) in the range from about 1.8 to about 2.1.


In one or more embodiments, the coating material includes silicon, aluminum or a combination thereof in an amount of about 35 atomic % or greater or in the range from about 37 atomic % to about 50 atomic %. The coating material may also include hydrogen and any one or more of oxygen, nitrogen, carbon, boron and fluorine. Hydrogen may be present in some embodiments in an amount in the range from about 1 atomic % to about 30 atomic %. Nitrogen may be present in an amount of about 30 atomic % or greater (e.g., from about 30 atomic % to about 45 atomic %). Where the coating material includes nitrogen and hydrogen, the hydrogen may be present in an amount in the range from about 15 atomic % to about 28 atomic %. The coating material may include a nonzero amount of oxygen of about 7.5 atomic % or less, a non-zero amount of carbon of about 10 atomic % or less, a non-zero amount of fluorine of about 5 atomic % or less, a non-zero amount of boron of about 10 atomic % or less, or combinations thereof.


In one or more embodiments, the coating material includes a compositional ratio of the amount of nitrogen (in atomic %) to the amount of silicon (in atomic %) of about 0.8 or greater. In some embodiments, the coating material includes a compositional ratio of the combined amount of carbon (in atomic %), oxygen (in atomic %) and fluorine (in atomic %) to the amount of anions of less than about 0.2.


A second aspect of this disclosure pertains to an article including a substrate having a major surface, and a coating structure disposed on the major surface forming a coated surface. The coating structure includes a layer of embodiments of the material described herein. The article of one or more embodiments exhibits an optical band gap of about 3.5 eV or greater, and a hardness of about 17 GPa or greater (up to about 35 GPa), as measured on the coated surface by a Berkovich Indenter Test along an indentation depth of about 50 nm or greater. The article of some embodiments exhibits an average transmittance of about 85% or greater (or about 92% or greater) over an optical wavelength regime in the range from about 400 nm to about 800 nm.


The coating structure of one or more embodiments may include one or more additional layers. The thickness of the coating structure may be up to and including about 5 micrometers (μm) (e.g., from about 10 nm to about 500 nm, from about 500 nm to about 1000 nm, or about 1000 or greater). The coating structure and/or the layer may be characterized as chemical vapor deposited-structure or a plasma-enhanced chemical vapor deposited-structure.


The article of one or more embodiments, exhibits an article transmittance color coordinates in the (L*, a*, b*) colorimetry system exhibiting a reference point color shift of less than about 2 from a reference point as measured at the coated surface, and/or an article reflectance color coordinates in the (L*, a*, b*) colorimetry system exhibiting a reference point color shift of less than about 5 from a reference point as measured at the coated surface, the reference point. The reference point may include at least one of the color coordinates (a*=0, b*=0), the color coordinates (a*=−2, b*=−2), and the reflectance color coordinates of the substrate.


The article of one or more embodiments exhibits an angular color shift of about 5 or less at an incident illumination angle that is 20 degrees or greater from a reference incident illumination angle, under an International Commission on Illumination illuminant selected from the group consisting of A series illuminants, B series illuminants, C series illuminants, D series illuminants, and F series illuminants, wherein the angular color shift is calculated using the equation √((a*2−a*1)2+(b*2−b*1)2), with a*1, and b*1 representing the coordinates of the article when viewed at a reference incident illumination angle and a*2, and b*2 representing the coordinates of the article when viewed at the incident illumination angle.


A third aspect of this disclosure pertains to a method of forming the coating material described herein. The method includes comprising introducing a source gas into a chamber, and forming the coating material by chemical vapor deposition on a substrate, wherein the coating material exhibits an optical band gap of about 3.5 eV or greater, and a hardness of about 17 GPa or greater, as measured by a Berkovich Indenter Test along an indentation depth of about 50 nm or greater. In one or more embodiments, the source gas can include any one or more of a silicon source gas, aluminum source gas and a nitrogen source gas. The silicon source gas may include silane. The nitrogen source gas may include nitrogen, nitrous oxide, ammonia or combinations thereof. The method of one or more embodiments may further include introducing a hydrogen source gas, oxygen gas, a carbon source gas, a boron source gas, a fluorine source gas or combinations thereof into the chamber. The hydrogen source gas may include silane, hydrogen or a combination thereof. The carbon source gas may include carbon monoxide, carbon dioxide, acetylene, butane, methane or a combination thereof. The fluorine source gas may include silicon tetrafluoride, fluorocarbon or a combination thereof.


In one or more embodiments, the coating material may be formed at a temperature of about 400° C. or less. The method may optionally include selectively etching any one or more of a portion of the coating material and the chamber when forming the material.


Additional features and advantages will be set forth in the detailed description which follows, and in part will be readily apparent to those skilled in the art from that description or recognized by practicing the embodiments as described herein, including the detailed description which follows, the claims, as well as the appended drawings.


It is to be understood that both the foregoing general description and the following detailed description are merely exemplary, and are intended to provide an overview or framework to understanding the nature and character of the claims. The accompanying drawings are included to provide a further understanding, and are incorporated in and constitute a part of this specification. The drawings illustrate one or more embodiment(s), and together with the description serve to explain principles and operation of the various embodiments.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a graph illustrating hardness, as measured with a Berkovich indenter as a function of the indentation depth;



FIG. 2 is a side-view illustration of an article including a substrate and a layer of the material disposed on the substrate, according to one or more embodiments;



FIG. 3A is a side-view illustration of the article of FIG. 1 with an additional layer disposed on the layer;



FIG. 3B is a side-view illustration of the article of FIG. 1, with an additional layer disposed between the layer and the substrate;



FIG. 3C is side-view illustration of the article of FIG. 1, with a first additional layer disposed on the layer and a second additional layer disposed between the layer and the substrate;



FIG. 4 is a graph showing the measured hardness of the layers of Examples 1A-1F as function of the ratio of nitrogen (atomic %) to silicon (atomic %) in the layers;



FIG. 5 is a graph showing the measured hardness as a function of the nitrogen content (in atomic %) of the layers of Examples 1A-1F;



FIG. 6 is a graph showing the measured hardness as a function of the silicon content (in atomic %) of the layers of Examples 1A-1F;



FIG. 7 is a graph showing the measured hardness as a function of the oxygen, carbon and fluorine fraction of the anions of the layers of Examples 1A-1F;



FIG. 8 is a graph showing the measured hardness as a function of the hydrogen content (in atomic %) of the layers of Examples 1A-1F;



FIG. 9 is a graph showing the measured hardness as a function of measured optical band gap of the layers of Examples 1A-1F;



FIG. 10 is a graph showing the measured hardness as a function of the refractive index at a wavelength of 632 nm of the layers of Examples 1A, and 1C-1F;



FIG. 10A is a graph showing the measured hardness as a function of the refractive index at a wavelength of 632 nm of the layers of Examples 1A-1D;



FIG. 11 is a graph showing the measured refractive index at a wavelength of 632 nm as a function of the measured optical band gap of the layers of Examples 1A-1F;



FIG. 12 is a graph showing the measured hardness as a function of the compositional ratio nitrogen (in atomic %) to silicon (in atomic %) of the layers of Examples 2A-2D;



FIG. 13 is a graph showing the measured hardness as a function of the amounts of fluorine, oxygen and carbon (in atomic %) in the layers of Examples 2B-2D;



FIG. 14 is a graph showing the measured hardness as a function of the measured refractive index at a wavelength of 632 nm of the layers of Examples 2A-2D;



FIG. 15 shows optical micrographs of Example 4E and Comparative Example 41, after indentation with a Vickers indenter at a 200 gram load;



FIG. 16 shows optical micrographs of Example 4E and Comparative Example 41, after indentation with a Vickers indenter at a 1000 gram load;



FIG. 17 is a graph showing the measured hardness as a function of refractive index at a wavelength of 632 nm of the layers of Examples 2A-1 through 2A-9 and 6A-6F;



FIG. 18 is a transmittance and reflectance spectra for the article of Example 7;



FIG. 19 is a transmittance and reflectance spectra for the article of Example 8;



FIG. 20 is a transmittance and reflectance spectra for the article of Example 9;



FIG. 21 is a transmittance and reflectance spectra for the article of Example 10;



FIGS. 22A-22E are transmission electron microscopy (TEM) images of Example 10;



FIG. 23 is an Energy Dispersive X-Ray Spectrometry (EDS) spectra of the entire thickness of the coating structure of Example 10;



FIG. 24 is an EDS spectra of the first 600 nm thickness of the coating structure of Example 10; and



FIG. 25 is an EDS spectra of the first 400 nm thickness of the coating structure of Example 10.





DETAILED DESCRIPTION

Reference will now be made in detail to various embodiment(s), examples of which are illustrated in the accompanying drawings.


A first aspect of the present disclosure pertains to a coating material exhibiting a hardness of about 17 GPa or greater, as measured by a Berkovich Indenter Hardness Test (as described herein). In one or more embodiments, the coating material exhibits an optical band gap of about 3.5 eV or greater. The coating material of some embodiments may exhibit low absorption (i.e., k values of less than about 0.001), and high transmittance and low reflectance values over an optical wavelength regime. As used herein, the “optical wavelength regime” includes the wavelength range from about 400 nm to about 800 nm. As used herein, the optical band gap, thicknesses and refractive index values of the coating materials or layers incorporating the coating material were measured using an n&k analyzer, supplied by n&k Technology, Inc., having an address of 80 Las Colinas Lane, San Jose, Calif. 95119. The reflectance and transmission spectra or values described herein were fitted with a Forouhi-Bloomer model for amorphous dielectric, in accordance with A. R. Forouhi and I. Bloomer, Physical Review B, 34 (10) 7018 (1986)).


The coating material described herein can be distinguished from known silicon-based materials. For example, Si3N4 is a known high temperature ceramic that can achieve high hardness values; however, when such materials are formed by PECVD, they often exhibit hardness values of less than about 17 GPa. Moreover, silicon nitride materials formed by PECVD methods do not have the composition Si3N4, but rather have the composition SiHxNyHz where a substantial amount of hydrogen (i.e., up to about 30 atomic %) is incorporated as Si—H, Si—H2, N—H species. The hydrogen is introduced by the precursors used in PECVD deposition processes. For example, the most common process for PECVD-formed SiNx includes SiH4+NH3→SiHyNxHz at 250° C.-400° C.


Typical PECVD-formed silicon nitride materials are unsuitable as scratch resistant layers for transparent substrates because they lack one of more of required attributes of hardness, optical band gap, and low stress. Typical semiconductor nitride films are have a yellow appearance due to low optical band gap (e.g., about 3 eV or less). Moreover, typical silicon nitride materials used for flat panel displays can be clear, with a refractive index of about 1.85 and optical band gap of about 4 eV; however, such materials have hardness values in the range from about 10 GPa to about 15 GPa.


The coating material described herein maximizes hardness and various optical properties by providing a specific combination of elements (and relative amounts of such elements), and an increase in certain bonds over other bonds. For example, as will be described herein, the coating material of one or more embodiments maximizes Si—N bonds over other bonds.


In one or more embodiments, the coating material may include silicon and hydrogen. The coating material may also include any one or more of oxygen, nitrogen, carbon, boron, and fluorine. In some embodiments, aluminum may also be included (in addition to silicon or instead of silicon).


In one or more embodiments, the coating material may include silicon in an amount of about 35 atomic % or greater. In specific embodiments, the amount of silicon, in atomic %, is in the range from about 35 to about 60, from about 35 to about 58, from about 35 to about 56, from about 35 to about 54, from about 35 to about 52, from about 35 to about 50, from about 35 to about 48, from about 35 to about 46, about 35 to about 50, about 36 to about 50, about 37 to about 50, about 38 to about 50, about 39 to about 50, about 40 to about 50, about from about 41 to about 50, from about 42 to about 50, from about 43 to about 50, from about 44 to about 50, from about 45 to about 50, from about 46 to about 50, from about 47 to about 50, from about 35 to about 49, from about 35 to about 48, from about 35 to about 46, from about 35 to about 44, from about 35 to about 48, from about 35 to about 47, from about 35 to about 46, from about 35 to about 46, from about 35 to about 45, from about 37 to about 45, from about 37 to about 44, or from about 37 to about 43, and all ranges and sub-ranges therebetween.


In one or more embodiments, the coating material may include hydrogen in an amount in the range from about 1 atomic % to about 30 atomic %. In some embodiments, the amount of hydrogen, in atomic %, is in the range from about 1 to about 29, from about 1 to about 28, from about 1 to about 27, from about 1 to about 26, from about 1 to about 25, from about 1 to about 24, from about 1 to about 22, from about 1 to about 20, from about 1 to about 18, from about 1 to about 16, from about 1 to about 14, from about 1 to about 12, from about 2 to about 30, from about 4 to about 30, from about 6 to about 30, from about 8 to about 30, from about 10 to about 30, from about 12 to about 30, from about 14 to about 30, from about 15 to about 30, from about 16 to about 30, from about 18 to about 30, from about 20 to about 30, from about 10 to about 28, from about 12 to about 28, from about 14 to about 28, or from about 15 to about 28, and all ranges and sub-ranges therebetween.


In one or more embodiments, the hydrogen content of the coating material is typically lower in embodiments of coating material that include oxygen as compared to embodiments of the coating material that are substantially free of oxygen. As used herein, the phrase “substantially free” in relation to a component or element of the coating material (e.g., silicon, aluminum, hydrogen, nitrogen, oxygen, carbon, boron, or fluorine) includes less than about 0.01 atomic % of that component or means the component is not intentionally added to the coating material. Without being bound by theory, it is believed that higher hardness values are exhibited by embodiments of the coating material having lower amounts of hydrogen, even when the temperature at which the coating material is formed is higher. A reduced hydrogen content in the coating material is believed to increase the silicon and nitrogen content. The hydrogen content of the coating material is a function of the deposition temperature at which the coating material is formed, the precursor chemistry, composition of the resulting coating material, and plasma source. In addition, hydrogen is present in silicon oxycarbonitride compositions as Si—H, Si—H2, N—H, N—H2, C—H, C—H2, and O—H species. The connectivity of the species in this amorphous network is thus determined by the hydrogen content. In the absence of metal-metal bonding, a silicon atom with no bound hydrogen is bonded to four anions while a silicon with a bound hydrogen is bonded to three anions, thus playing the role of aluminum in a glass network. Similarly a nitrogen with a bound hydrogen plays the role of oxygen in a glass network. The composition at which the maximum fraction of silicon to nitrogen bonding (which is also the observed and measured maximum hardness), is then a function not only of hydrogen content but also hydrogen speciation.


In one or more embodiments, the coating material may include nitrogen. In such embodiments, nitrogen may be present in an amount of about 30 atomic % or greater. In one or more embodiments, the amount of nitrogen, in atomic %, in the coating material may be in the range from about 30 to about 60, from about 30 to about 58, from about 30 to about 56, from about 30 to about 54, from about 30 to about 52, from about 30 to about 50, from about 30 to about 48, from about 30 to about 46, from about 30 to about 45, from about 30 to about 44, from about 30 to about 42, from about 30 to about 40, from about 35 to about 60, from about 35 to about 58, from about 35 to about 56, from about 35 to about 54, from about 35 to about 52, from about 35 to about 50, from about 35 to about 48, from about 35 to about 46, from about 35 to about 44, from about 35 to about 42, from about 35 to about 40, and all ranges and sub-ranges therebetween. In one or more embodiments, the coating material may be substantially free of nitrogen.


Where nitrogen is present in the coating material, the hydrogen content may be in the range from about 15 atomic % to about 30 atomic % (e.g., from about 15 atomic % to about 25 atomic %, from about 15 atomic % to about 20 atomic %, from about 20 atomic % to about 30 atomic %, or from about 25 atomic % to about 30 atomic %). In one or more embodiments, the compositional ratio of the amount of nitrogen (in atomic %) and the amount of silicon (in atomic %) may be about 0.8 or greater. In some embodiments, this ratio may be about 0.85 or greater, about 0.9 or greater, about 0.95 or greater, about 1 or greater, about 1.05 or greater, about 1.1 or greater, or about 1.15 or greater, and all ranges and sub-ranges therebetween. In some embodiments, the upper limit of the composition ratio of the amount of nitrogen (in atomic %) and the amount of silicon (in atomic %) may be about 1.2 or less (e.g., 1.18 or less, 1.16 or less, 1.14 or less, 1.12 or less, or about 1.1 or less).


In one or more embodiments, the coating material may include oxygen. In some embodiments, the coating material is substantially free of oxygen. Where oxygen is included, it may be present in a non-zero amount of about 7.5 atomic % or less. In one or more embodiments, oxygen may be present in the coating material, in an amount, in atomic %, in the range from about 0.1 to about 7.5, from about 0.1 to about 7, from about 0.1 to about 6.5, from about 0.1 to about 6, from about 0.1 to about 5.5, from about 0.1 to about 5, from about 0.1 to about 4.5, from about 0.1 to about 4, from about 0.5 to about 7.5, from about 1 to about 7.5, from about 1.5 to about 7.5, from about 2 to about 7.5, from about 2.5 to about 7.5, from about 3 to about 7.5, from about 3.5 to about 7.5, from about 4 to about 7.5, from about 4.5 to about 7.5, or from about 5 to about 7.5, and all ranges and sub-ranges therebetween.


In one or more embodiments, the coating material may include carbon. In some embodiments, the coating material is substantially free of carbon. Where carbon is included, it may be present in a non-zero amount of about 10 atomic % or less. In one or more embodiments, carbon may be present in the coating material, in an amount, in atomic %, in the range from about 0.1 to about 10, from about 0.1 to about 9.5, from about 0.1 to about 9, from about 0.1 to about 8.5, from about 0.1 to about 8, from about 0.1 to about 7.5, from about 0.1 to about 7, from about 0.1 to about 6.5, from about 0.1 to about 6, from about 0.1 to about 5.5, from about 0.1 to about 5, from about 0.1 to about 4.5, from about 0.1 to about 4, from about 0.5 to about 10, from about 1 to about 10, from about 1.5 to about 10, from about 2 to about 10, from about 2.5 to about 10, from about 3 to about 10, from about 3.5 to about 10, from about 4 to about 10, from about 4.5 to about 10, from about 5 to about 10, from about 5.5 to about 10, from about 6 to about 10, from about 6.5 to about 10, from about 7 to about 10, and all ranges and sub-ranges therebetween.


In one or more embodiments, the coating material includes fluorine. In such embodiments, the amount of fluorine may be present in a non-zero amount of about 5 atomic % or less. In some embodiments, fluorine may be present (in atomic %) in the range from about 0.1 to about 4, from about 0.1 to about 3, from about 0.1 to about 2, from about 0.1 to about 1.5, from about 0.1 to about 1, from about 0.5 to about 5, from about 0.75 to about 5, from about 1 to about 5, from about 2 to about 5, from about 3 to about 5, from about 0.01 to about 2, from about 0.01 to about 1.5, from about 0.01 to about 1, or from about 0.01 to about 0.5, and all ranges and sub-ranges therebetween. In some embodiments, the coating material is substantially free of fluorine. Where the coating material is substantially free of fluorine or includes less than about 1 atomic % or less than about 0.5 atomic % of fluorine, residual fluorine present from the formation process (including any in-situ plasma cleaning processes) may be minimized or eliminated by modifying cleaning processes and implementing conditioning steps, known in the art (e.g., H2 plasma treatment).


In some variants, the coating material includes any one or more or two or more of oxygen, carbon and fluorine. The compositional ratio of the combined amount of carbon (in atomic %), oxygen (in atomic %) and fluorine (in atomic %) to the amount of anions in the coating material may be less than about 0.2 (e.g., less than about 0.19, less than about 0.18, less than about 0.17, less than about 0.16, less than about 0.15, less than about 0.1, less than about 0.05, less than about 0.02, or less than about 0.01). In other words, the combined carbon, oxygen and fluorine content of one or more embodiments comprises less than about 18 atomic % of the anions in the coating material. As used in this particular relationship, the word “anions” refers to the sum of the amount (in atomic %) of carbon, oxygen, nitrogen and fluorine in the coating material. In some embodiments, the composition ratio of the combined amount of carbon (in atomic %), oxygen (in atomic %) and fluorine (in atomic %) to the amount of anions in the coating material may be expressed as: [C atomic %+O atomic %+F atomic %]/[C atomic %+O atomic %+F atomic %+N atomic %], where applicable. Without being bound by theory, it is believed that hardness of the coating material decreases as the amount of nitrogen decreases.


In one or more embodiments, aluminum may be included in the coating material. In some instances, the coating material may be substantially free of aluminum. Where aluminum is included, it may be present in an amount of about 10 atomic % or less. In some instances, the amount of aluminum, in atomic %, is in the range from about 35 to about 60, from about 35 to about 58, from about 35 to about 56, from about 35 to about 54, from about 35 to about 52, from about 35 to about 50, from about 35 to about 48, from about 35 to about 46, about 35 to about 50, about 36 to about 50, about 37 to about 50, about 38 to about 50, about 39 to about 50, about 40 to about 50, about from about 41 to about 50, from about 42 to about 50, from about 43 to about 50, from about 44 to about 50, from about 45 to about 50, from about 46 to about 50, from about 47 to about 50, from about 35 to about 49, from about 35 to about 48, from about 35 to about 46, from about 35 to about 44, from about 35 to about 48, from about 35 to about 47, from about 35 to about 46, from about 35 to about 46, from about 35 to about 45, from about 37 to about 45, from about 37 to about 44, or from about 37 to about 43, and all ranges and sub-ranges therebetween. In one or more embodiments, where aluminum is present in the coating material, the coating material may be substantially free of carbon, may be substantially free of silicon or may be substantially free of carbon and silicon.


In one or more embodiments, the coating material may include boron. In some instances, the amount of boron can be tailored to modify or reduce the coefficient of friction (COF) of the coating material (and thus improve or increase the lubricity to of the coating material). In one or more embodiments, boron may be present in a non-zero amount of about 10 atomic % or less. In some embodiments, boron may be present in an amount, in atomic %, in the range from about 0.01 to about 10, from about 0.01 to about 9, from about 0.01 to about 8, from about 0.01 to about 7, from about 0.01 to about 6, from about 0.01 to about 5, from about 0.01 to about 4, from about 0.01 to about 3, from about 0.01 to about 2, from about 0.01 to about 1, from about 0.01 to about 0.1, from about 0.1 to about 10, from about 1 to about 10, from about 2 to about 10, from about 3 to about 10, from about 4 to about 10, from about 5 to about 10, from about 6 to about 10, from about 7 to about 10, from about 8 to about 10, or from about 9 to about 10, and all ranges and sub-ranges therebetween.


In one or more embodiments, the coating material exhibits a high hardness. The hardness of the coating material may be characterized by a Berkovich Indenter Hardness Test, which is a nanoindentation test used to determine the maximum hardness of the coating material. As used herein, the “Berkovich Indenter Hardness Test” includes measuring the hardness of a material by indenting a surface thereof with a diamond Berkovich indenter. The Berkovich Indenter Hardness Test includes indenting the surface of the material or coating material with the diamond Berkovich indenter to form an indent having an indentation depth in the range from about 50 nm to the entire thickness of the material and measuring the maximum hardness from this indentation along the entire indentation depth range or a segment of this indentation depth (e.g., in the range from about 100 nm to about 600 nm). The hardness may be measured generally using the methods set forth in Oliver, W. C.; Pharr, G. M. An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res., Vol. 7, No. 6, 1992, 1564-1583; and Oliver, W. C.; Pharr, G. M. Measurement of Hardness and Elastic Modulus by Instrument Indentation: Advances in Understanding and Refinements to Methodology. J. Mater. Res., Vol. 19, No. 1, 2004, 3-20. In some embodiments, the thickness of the material used to measure hardness may be about 1000 nm or greater. The indentation depth is made and measured from the surface of the material. As used herein, hardness refers to a maximum hardness, and not an average hardness.


The Berkovich Indenter Hardness Test may be used to determine the hardness of a layer of the coating material or an article including a layer of the coating material (with or without other additional layers, as described herein). In such instances, surface of the layer or the coated surface of the article (101, in FIGS. 2 and 3A-3C) would be indented, as will be described herein.


In one or more embodiments, the coating material exhibits a hardness of about 17 GPa or greater, as measured by the Berkovich Indenter Hardness Test. In some embodiments, the hardness may be in the range from about 17 GPa to about 50 GPa, from about 18 GPa to about 50 GPa, from about 19 GPa to about 50 GPa, from about 20 GPa to about 50 GPa, from about 21 GPa to about 50 GPa, from about 22 GPa to about 50 GPa, from about 23 GPa to about 50 GPa, from about 24 GPa to about 50 GPa, from about 25 GPa to about 50 GPa, from about 26 GPa to about 50 GPa, from about 27 GPa to about 50 GPa, from about 28 GPa to about 50 GPa, from about 17 GPa to about 45 GPa, from about 17 GPa to about 40 GPa, from about 17 GPa to about 35 GPa, from about 17 GPa to about 33 GPa, from about 17 GPa to about 32 GPa, from about 17 GPa to about 30 GPa, from about 17 GPa to about 25 GPa, from about 18 GPa to about 24 GPa, and all ranges and sub-ranges therebetween. In one or more embodiments, these hardness values are present along indentation depths in the range from about 50 nm to about 300 nm, from about 50 nm to about 400 nm, from about 50 nm to about 500 nm, from about 50 nm to about 600 nm, from about 100 nm to about 300 nm, from about 100 nm to about 400 nm, from about 100 nm to about 500 nm, from about 100 nm to about 600 nm, from about 200 nm to about 300 nm, from about 200 nm to about 400 nm, from about 200 nm to about 500 nm, or from about 200 nm to about 600 nm. In one or more embodiments, these hardness values are present along indentation depths of about 0.3 times or about 0.1 times the thickness of the coating material or less.


In one or more embodiments, the coating material may include silicon, hydrogen and nitrogen and optional other elements (e.g., carbon, oxygen, fluorine, boron or combinations thereof). In such embodiments, the number of Si—N bonds may comprise a majority of the bonds in the coating material. The bond energy for Si—N bonds is about 470 kJ/mol, the bond energy for Si—Si bonds is about 327 kJ/mol and the bond energy of Si—H is about 299.2 kJ/mol. Using this information, maximizing hardness in the absence of hydrogen should require stoichiometric nitride, as was shown by known references. Based on this, a similar trend was expected for embodiments of the coating material described herein that are formed by PECVD; however, the role of hydrogen in such materials was not clear as hydrogen could be bonded either to the silicon or to the nitrogen. Moreover, the role of hydrogen is further complicated where oxygen and/or carbon are included in the coating material. Surprisingly, the embodiments described herein achieve higher Si—N bonding even where hydrogen is present.


In one or more embodiments, the coating material may exhibit a Young's modulus of about 150 GPa or greater. In some embodiments, the coating material may have a Young's modulus of about 152 GPa or greater, about 154 GPa or greater, about 156 GPa or greater, about 158 GPa or greater, about 160 GPa or greater, about 162 GPa or greater, about 164 GPa or greater, about 166 GPa or greater and all ranges and sub-ranges therebetween. In some instances, the upper limit of the modulus may be about 300 GPa (or about 280 GPa, about 260 GPa, about 240 GPa, or about 220 GPa).


In some embodiments, the coating material may be characterized by the ratio of hardness (H) to Young's modulus (E) (i.e., H/E). In some embodiments, this ratio may be inverted (i.e., E/H). The ratio H/E of some embodiments of the coating material may be in the range from about 0.09 to about 0.11. In some instances, the inverse ratio of E/H may be in the range from about 9 to about 11.


The coating material of some embodiments exhibits low stress, when formed. In some embodiments, the layer of the coating material exhibits a compressive stress of about −400 MPa or greater (e.g., from about −400 MPa to about 0 MPa). In some embodiments, these values were obtained when the coating material was formed using a PECVD process at 150° C.


The coating material of one or more embodiments exhibits an optical band gap of about 3.5 eV or greater. In some embodiments, the coating material exhibits an optical band gap in the range from about 3.5 eV to about 6 eV. In some instances, the optical band gap may be in the range from about 3.6 eV to about 6 eV, from about 3.7 eV to about 6 eV, from about 3.8 eV to about 6 eV, from about 3.9 eV to about 6 eV, from about 4 eV to about 6 eV, from about 4.1 eV to about 6 eV, from about 4.2 eV to about 6 eV, from about 3.5 eV to about 5.8 eV, from about 3.5 eV to about 5.6 eV, from about 3.5 eV to about 5.4 eV, from about 3.5 eV to about 5.2 eV, from about 3.5 eV to about 5 eV, from about 3.5 eV to about 4.8 eV, from about 3.5 eV to about 4.6 eV, from about 3.5 eV to about 4.4 eV, from about 5 eV to about 6 eV, from about 5 eV to about 5.5 eV, or from about 5.5 eV to about 6 eV, and all ranges and sub-ranges therebetween.


The coating material of one or more embodiments may exhibit a refractive index at 632 nm in the range from about 1.6 to about 2.5. In some instances the refractive index at 632 nm may be in the range from about 1.8 to about 2.1. In some embodiments, the coating material exhibits low absorption by exhibiting a k value of about 0.001 or less. The coating material exhibits an absorptive coefficient (α=4πk/λ) of about 0.002 or less (e.g., about 0.0019 or less, about 0.0018 or less or about 0.0017 or less), at a wavelength of about 632 nm.


In some embodiments, the coating material may be disposed on various substrates, as will be described herein, and exhibits sufficient adhesion to prevent delamination. In some embodiments, the coating material may be disposed in a layer having low stress and high film toughness, as described by a load required to cause fracture in the layer.


In some instances, the coating material may exhibit a COF of about 0.2 or less, when measured against steel wool. In some instances, the COF may be about 0.15 or less, about 0.1 or less, about 0.09 or less, about 0.08 or less, about 0.07 or less, about 0.06 or less, or about 0.05 or less, and all ranges and sub-ranges therebetween.


A second aspect of this disclosure pertains to an article including the coating material described herein. As shown in FIG. 2, the article 100 may include a substrate 110, and a coating structure 115 disposed on the substrate. The coating structure 115 forms a coated surface 101. The substrate 110 includes opposing major surfaces 112, 114 and opposing minor surfaces 116, 118. The coating structure 115 includes a layer 120, which is shown in FIG. 2 as being disposed on a first opposing major surface 112; however, the coating structure may be disposed on the second opposing major surface 114 and/or one or both of the opposing minor surfaces, in addition to or instead of being disposed on the first opposing major surface 112.


The coating structure of one or more embodiments may include only the layer 120 or may include the layer 120 and one or more additional layers 140. The layer 120 may include embodiments of the coating material described herein. The layer may include only the coating material described herein or may a mixture of one or more additional materials, in addition to the coating material. The term “layer” may include a single layer or may include one or more sub-layers. Such sub-layers may be in direct contact with one another. The sub-layers may be formed from the same material or two or more different materials. In one or more alternative embodiments, such sub-layers may have intervening layers of different materials disposed therebetween. In one or more embodiments a layer may include one or more contiguous and uninterrupted layers and/or one or more discontinuous and interrupted layers (i.e., a layer having different materials formed adjacent to one another). A layer or sub-layers may be formed by any known method in the art, including discrete deposition or continuous deposition processes. In one or more embodiments, the layer may be formed using only continuous deposition processes, or, alternatively, only discrete deposition processes.


As used herein, the term “dispose” includes coating, depositing and/or forming a material onto a surface using any known method in the art. The disposed material may constitute a layer, as defined herein. The phrase “disposed on” includes the instance of forming a material onto a surface such that the material is in direct contact with the surface and also includes the instance where the material is formed on a surface, with one or more intervening material(s) is between the disposed material and the surface. The intervening material(s) may constitute a layer, as defined herein.


With respect to measuring the maximum hardness of the articles described herein, typically in nanoindentation measurement methods (such as by the Berkovich Indenter Hardness Test) of a coating material or layer that is harder than the underlying substrate, the measured hardness may appear to increase initially due to development of the plastic zone at shallow indentation depths and then increases and reaches a maximum value or plateau at deeper indentation depths. Thereafter, hardness begins to decrease at even deeper indentation depths due to the effect of the underlying the substrate. Where the coating or layer is less hard than the underlying substrate, the measured hardness may increase after reaching a maximum value or plateau (related to the hardness of the coating), and thereafter increase at deeper indentation depths due to the effect of the underlying substrate.


The indentation depth range and the hardness values at certain indentation depth range(s) may be selected to identify a particular hardness response of the articles, described herein, without the effect of the underlying substrate. When measuring hardness of the article with a Berkovich indenter, the region of permanent deformation (plastic zone) of a coating material is associated with the hardness of the coating material. During indentation, an elastic stress field extends well beyond this region of permanent deformation. As indentation depth increases, the apparent hardness and modulus are influenced by stress field interactions with the underlying substrate. The substrate influence on hardness occurs at deeper indentation depths (i.e., typically at depths greater than about 10% of the layer thickness). Moreover, a further complication is that the hardness response requires a certain minimum load to develop full plasticity during the indentation process. Prior to that certain minimum load, the hardness shows a generally increasing trend.


At small indentation depths (which also may be characterized as small loads) (e.g., up to about 100 nm, or less than about 70 nm) of an article, the apparent hardness of a coating material appears to increase dramatically versus indentation depth. This small indentation depth regime does not represent a true metric of hardness but instead, reflects the development of the aforementioned plastic zone, which is related to the finite radius of curvature of the indenter. At intermediate indentation depths, the apparent hardness approaches maximum levels. At deeper indentation depths, the influence of the substrate becomes more pronounced as the indentation depth increases. Hardness begins to drop dramatically once the indentation depth exceeds about 30% of the layer thickness.



FIG. 1 includes the hardness values as a function of indentation depth for a known article including a substrate and a layer of a known material having different thicknesses. As shown in FIG. 1, the hardness measurement at intermediate indentation depths (at which hardness approaches and is maintained at maximum levels) and at deeper indentation depths depends on the thickness of the layer of the known material. The 500 nm-thick layer of known material exhibited its maximum hardness at indentation depths from about 100 nm to 180 nm, followed by a dramatic decrease in hardness at indentation depths from about 180 nm to about 200 nm, indicating the hardness of the substrate influencing the hardness measurement. The 1000 nm-thick layer of known material exhibited a maximum hardness at indentation depths from about 100 nm to about 300 nm, followed by a dramatic decrease in hardness at indentation depths greater than about 300 nm. The 1500 nm-thick layer of known material exhibited a maximum hardness at indentation depths from about 100 nm to about 550 nm and the 2000-nm thick layer of known material exhibited a maximum hardness at indentation depths from about 100 nm to about 600 nm.


In some embodiments, the maximum hardness of the coating material may be defined along indentation depths of about 50 nm or greater. For example, where the coating material has at thickness of about 1000 nm or less or is part of a coating structure (having a plurality of layers) having a thickness of about 1000 nm or less, the coating material or coating structure may exhibit a maximum hardness along an indentation depth of about 50 nm to about 1000 nm or along an indentation depth that is 0.3 times the thickness less (e.g., 300 nm or less) or about 0.1 times the thickness or less (e.g., 100 nm or less). In some embodiments, the coating material exhibits a maximum hardness at indentation depths greater than about 100 nm. In one or more specific embodiments, this maximum hardness at indentation depths greater than about 100 nm may be present where the coating material has a thickness greater than about 1000 nm or comprises a layer in a coating structure (having a plurality of layers) having a thickness of greater than 1000 nm. The maximum hardness along a defined indentation depth or depth range may be specified depending on the thickness of the coating material or thickness of the layer(s) of the coating material and additional layers (as described herein). In some embodiments, the coating material may exhibit a maximum hardness at depths sufficient to provide resistance to specific scratches such as microductile scratches (which typically have depths of about 200 nm to about 400 nm). As used herein, the phrase “microductile scratch” includes a single groove in a material having unlimited length.


In one or more embodiments, the article 100 exhibits a maximum hardness of about 17 GPa or greater, as measured on the coated surface 101 by the Berkovich Indenter Hardness Test along an indentation depth range. In some embodiments, the maximum hardness of the article 100 may be in the range from about 17 GPa to about 50 GPa, from about 18 GPa to about 50 GPa, from about 19 GPa to about 50 GPa, from about 20 GPa to about 50 GPa, from about 21 GPa to about 50 GPa, from about 22 GPa to about 50 GPa, from about 23 GPa to about 50 GPa, from about 24 GPa to about 50 GPa, from about 25 GPa to about 50 GPa, from about 26 GPa to about 50 GPa, from about 27 GPa to about 50 GPa, from about 28 GPa to about 50 GPa, from about 17 GPa to about 45 GPa, from about 17 GPa to about 40 GPa, from about 17 GPa to about 35 GPa, from about 17 GPa to about 30 GPa, from about 17 GPa to about 25 GPa, from about 18 GPa to about 24 GPa, and all ranges and sub-ranges therebetween. In one or more embodiments, these maximum hardness values are exhibited along indentation depths in the range from about 50 nm to about 300 nm, from about 50 nm to about 400 nm, from about 50 nm to about 500 nm, from about 50 nm to about 600 nm, from about 100 nm to about 300 nm, from about 100 nm to about 400 nm, from about 100 nm to about 500 nm, from about 100 nm to about 600 nm, from about 200 nm to about 300 nm, from about 200 nm to about 400 nm, from about 200 nm to about 500 nm, or from about 200 nm to about 600 nm. Such indentation depths may be used where the coating structure 115 (including the layer 120 alone or in combination with the additional layers 140) has a thickness greater than about 1000 nm. In one or more embodiments, these hardness values are present along indentation depths of about 0.3 times or about 0.1 times the thickness of the coating material (or the coating structure that includes a layer of the coating material) or less. In such embodiments, the coating structure 115 (including the layer 120 alone or in combination with the additional layers 140) has a thickness of about 1000 nm or less.


In one or more embodiments, the coating structure 115 and/or article 100 exhibits scratch resistance that is characterized by a reduction in scratch depth. Specifically, one or more embodiments of the article may exhibit a reduction in scratch depth, when compared to the scratch depth in the substrate 110 without the coating structure 115. When the article 100 is scratched using a Berkovich indenter, using a load of 160 mN at a speed of 10 μm/second for a length of at least 100 μm along the coated surface 101, the resulting scratch has a depth that less than the depth of a scratch formed identically (i.e., using the same indenter, load, speed, and length) on an substrate 110 (without the coating structure disposed thereon) by at least about 30%, at least about 31%, at least about 32%, at least about 33%, at least about 34%, at least about 35%, at least about 36%, at least about 37%, at least about 38%, at least about 39%, at least about 40%, at least about 41%, at least about 42%, at least about 43%, at least about 44%, at least about 45%, at least about 46%, at least about 47%, at least about 48%, at least about 49%, at least about 50%, at least about 51%, at least about 52%, at least about 53%, at least about 54%, at least about 55%, at least about 56%, at least about 57%, at least about 58%, at least about 59%, at least about 60% (and all ranges and sub-ranges therebetween). This scratch resistant property of the coating structure 115 and/or article 100 may be present where the article utilizes an amorphous substrate (e.g., strengthened glass substrate and/or a non-strengthened glass substrate), a crystalline substrate (e.g., a strengthened glass ceramic substrate, a non-strengthened glass ceramic glass substrate, and a single crystal substrate such as sapphire) or a combination thereof. In some embodiments, the scratch resistance may be present where the substrate is polymeric. In addition, this scratch resistant property of the coating structure 115 and/or article 100 may be present when the coated surface 101 article is scratched using the Berkovich indenter, at a speed of 10 μm/second for a length of at least 1 mm, at least 2 mm, at least 3 mm, at least 4 mm or at least 5 mm. Comparison between the article 100 and the bare substrate may be performed on the same article, where the coated surface 101 is tested to evaluate the scratch depth of the article and the opposite surface of the substrate (e.g., 114, in FIG. 1) is tested evaluate the scratch depth of the bare substrate; the resulting scratch depths may be compared to determine the scratch depth reduction on the coated surface 101 with respect to the bare substrate. In one or more embodiments, the article 100 exhibits the improved reduction in scratch depth in comparison with a bare substrate having a hardness in the range from about 7 GPa to about 8 GPa, as measured by the Berkovich Indenter Hardness Test.


In one or more embodiments, when the article 100 is scratched by a Berkovich indenter using a load of 160 mN at a speed of 10 μm/seconds for at least a length of 100 μm along the coated surface 101, the resulting scratch has a scratch depth of less than 250 nm, less than 240 nm, less than 230 nm, less than 220 nm, or less than about 200 nm. The scratch depths described herein may be measured from the original and undisturbed surface of the coated surface. In other words, the scratch depth does not include any amount of coating structure 115 that may be built up around the edges of the scratch due to displacement of the coating structure materials caused by the penetration of the Berkovich indenter into the coating structure.


In one or more embodiments, the coating structure 115 and/or article 100 exhibits scratch resistance that is characterized by a reduction in scratch width. Specifically, one or more embodiments of the article 100 may exhibit a reduction in scratch width, when compared to the scratch depth in the substrate 110 without the coating structure 115. When the article 100 is scratched using a Berkovich indenter, using a load of 160 mN at a speed of 10 μm/second for a length of at least 100 μm along the coated surface 101, the resulting scratch has a width that is at least about 30%, at least about 31%, at least about 32%, at least about 33%, at least about 34%, at least about 35%, at least about 36%, at least about 37%, at least about 38%, at least about 39%, at least about 40%, at least about 41%, at least about 42%, at least about 43%, at least about 44%, at least about 45% (and all ranges and sub-ranges therebetween) less than the width of a scratch formed identically (i.e., using the same indenter, load, speed, and length) on a substrate 110, without the coating structure 115 disposed thereon. This scratch resistant property of the coating structure 115 and/or article 100 may be present where the article utilizes an amorphous substrate (e.g., strengthened glass substrate and/or a non-strengthened glass substrate), a crystalline substrate (e.g., a strengthened glass ceramic substrate, a non-strengthened glass ceramic glass substrate, and a single crystal substrate such as sapphire) or a combination thereof. In one or more alternative embodiments, this scratch resistance may be present where the substrate is polymeric. In addition, this scratch resistance may be present when the coated surface 101 of the article is scratched using the Berkovich indenter, at a speed of 10 μm/second for a length of at least 1 mm, at least 2 mm, at least 3 mm, at least 4 mm or at least 5 mm. Comparison between the article 100 and the bare substrate 110 may be performed on the same article, where the coated surface 101 is tested to evaluate the scratch width of the article and the opposite surface of the substrate (e.g., 114, in FIG. 2) is tested evaluate the scratch depth of the bare substrate; the resulting scratch widths may be compared to determine the scratch width reduction on the coated surface 101 with respect to the bare substrate. In one or more embodiments, the article 100 exhibits the improved reduction in scratch width in comparison with a bare substrate having a hardness in the range from about 7 GPa to about 8 GPa, as measured by the Berkovich Indenter Hardness Test.


In one or more embodiments, when an article is scratched by a Berkovich indenter using a load of 160 mN at a speed of 10 μm/seconds for at least a length of 100 μm along the coated surface 101, the resulting scratch has a scratch width of less than about 10 μm. In some embodiments, the resulting scratch has a scratch width in the range from about 1 μm to about 10 μm, from about 2 μm to about 10 μm, from about 3 μm to about 10 μm, from about 4 μm to about 10 μm, from about 5 μm to about 10 μm, from about 1 μm to about 9 μm, from about 1 μm to about 8 μm, from about 1 μm to about 7 μm, from about 1 μm to about 6 μm, from about 2 μm to about 8 μm, from about 2 μm to about 6 μm, from about 2 μm to about 5 μm, or from about 2 μm to about 4 μm and all ranges and sub-ranges therebetween. The scratch widths described herein may be measured from the original and undisturbed coated surface 101. In other words, the scratch width does not include any amount of coating structure 115 that may be built up around the edges of the scratch due to displacement of the coating structure caused by the penetration of the Berkovich indenter.


The article 100 of one or more embodiments exhibits a Vickers indentation fracture threshold of about 1000 grams or greater, or about 2000 grams or greater.


In one or more embodiments, the article 100 exhibits an average transmittance of about 85% or greater (e.g., about 86% or greater, about 88% or greater, about 90% or greater, about 92% or greater, or even about 94% or greater) over the optical wavelength regime, as measured from the coated surface 101. The total reflectance of the article 100, as measured at the coated surface 101, may be about 15% or less, over the optical wavelength regime. In some embodiments, the article 100 exhibits a total reflectance, as measured at the coated surface 101, of about 1% or less, or about 0.5% or less, over the optical wavelength regime. As used herein, the term “transmittance” is defined as the percentage of incident optical power within a given wavelength range transmitted through a material (e.g., the coating material, a layer of such coating material, and/or the article 100). The term “reflectance” is similarly defined as the percentage of incident optical power within a given wavelength range that is reflected from a material (e.g., the coating material, a layer of such coating material, and/or the article 100). Transmittance and reflectance are measured using a specific linewidth. In one or more embodiments, the spectral resolution of the characterization of the transmittance and reflectance is less than 5 nm or 0.02 eV. In some embodiments, the article 100 exhibits an average reflectance (as measured from the coated surface 101) of about 11% or less, as measured on only the coated surface 101 over the optical wavelength regime.


The thickness of the coating structure 115 and/or of the layer 120 may be up to about 5 micrometers (μm). In some embodiments, the thickness of the coating structure 115 and/or layer 120 may be in the range from about 100 nanometers (nm) to about 5 micrometers (μm), 200 nanometers (nm) to about 5 micrometers (μm), 300 nanometers (nm) to about 5 micrometers (μm), 400 nanometers (nm) to about 5 micrometers (μm), 500 nanometers (nm) to about 5 micrometers (μm), from about 600 nm to about 5 micrometers (μm), from about 700 nm to about 5 micrometers (μm), from about 800 nm to about 5 micrometers (μm), from about 900 nm to about 5 micrometers (μm), from about 1 micrometer (μm) to about 5 micrometers (μm), from about 1.1 micrometers (μm) to about 5 micrometers (μm), from about 1.2 micrometers (μm) to about 5 micrometers (μm), from about 1.3 micrometers (μm) to about 5 micrometers (μm), from about 1.4 micrometers (μm) to about 5 micrometers (μm), from about 1.5 micrometers (μm) to about 5 micrometers (μm), from about 1.6 micrometers (μm) to about 5 micrometers (μm), from about 1.7 micrometers (μm) to about 5 micrometers (μall), from about 1.8 micrometers (μm) to about 5 micrometers (μm), from about 1.9 micrometers (μm) to about 5 micrometers (μm), from about 2 micrometers (μm) to about 5 micrometers (μm), 1 micrometer (μm) to about 3 μm, from about 1 micrometer (μm) to about 2.8 micrometers (μm), from about 1.5 micrometers (μm) to about 2.6 micrometers (μm), from about 1.5 micrometers (μm) to about 2.4 micrometers (μm), from about 1.5 micrometers (μm) to about 2.2 micrometers (μm), from about 1.5 micrometers (μm) to about 2 micrometers (μm), from about 1.6 micrometers (μm) to about 3 micrometers (μm), from about 1.7 micrometers (μm) to about 3 micrometers (μm), from about 1.8 micrometers (μm) to about 3 micrometers (μm), from about 1.9 micrometers (μm) to about 3 micrometers (μm), from about 2 micrometers (μm) to about 3 micrometers (μm), from about 2.1 micrometers (μall) to about 3 micrometers (μm), from about 2.2 micrometers (μm) to about 3 micrometers (μall), from about 2.3 micrometers (μm) to about 3 micrometers (μm), and all ranges and sub-ranges therebetween. In some embodiments, the physical thickness of the coating structure 115 and/or layer 120 may be in the range from about 0.1 micrometers (μm) to about 2 micrometers (μm), or from about 0.1 μm to about 1 micrometers (μm), or from 0.2 micrometers (μm) to about 1 micrometers (μm). In some embodiments, the thickness of the coating structure 115 and/or layer 120 may be about 500 nm or less (e.g., about 400 nm or less, about 300 nm or less, about 200 nm or less, about 100 nm or less).


The coating structure 115 may also include one or more additional layers 140, as shown in FIGS. 3A-3C. In one option, an additional layer 140 may be disposed on the layer 120 (FIG. 3A). In another option, the additional layer 140 may be disposed between the layer 120 and the substrate 110 (FIG. 3B). In yet another option, one additional layer 140A may be disposed on the layer 120 and a second additional layer 140B may be disposed between the layer 120 and the substrate 110 (FIG. 3C). The additional layer(s) 140 may include one or more sub-layers as described herein. It should be noted that any one or more of the additional layer 140 used in the embodiments described herein may be formed by methods that differ from the layer 120. For example, the additional layer(s) 140 may be formed by chemical vapor deposition (e.g., plasma enhanced chemical vapor deposition), physical vapor deposition (e.g., reactive or nonreactive sputtering or laser ablation), thermal or e-beam evaporation and/or atomic layer deposition. The additional layer(s) may provide or enhance the scratch-resistance, optical properties, anti-fingerprint properties, strength retention or other attributes of the article 100. For example, the layer 120 may be alternated with the additional layers 140 forming an alternating layer structure of high and low refractive index materials. The coating structure 115 may also include more than one layer 120. The thicknesses of the individual layer 120 and additional layers 140 and combined thickness of all of the layer 120 and all of the additional layer 140 may be tuned to achieve desirable properties. Exemplary materials for use in the additional layer 140 include: SiO2, Al2O3, GeO2, SiO, AlOxNy, AlN, Si3N4, SiOxNy, SiuAlvOxNy, SixCy, SixOyCz, Ta2O5, Nb2O5, TiO2, TiOxNy, ZrO2, TiN, MgO, MgF2, BaF2, CaF2, SnO2, HfO2, Y2O3, MoO3, DyF3, YbF3, YF3, CeF3, organosilicates (e.g., SrF3, LaF3, GdF3 and the like), diamond, diamond-like carbon, polymers, fluoropolymers, plasma-polymerized polymers, siloxane polymers, silsesquioxanes, polyimides, fluorinated polyimides, polyetherimide, polyethersulfone, polyphenylsulfone, polycarbonate, polyethylene terephthalate, polyethylene naphthalate, acrylic polymers, urethane polymers, polymethylmethacrylate, and combinations thereof. The layer and 120/or the additional layer 140 may be characterized as PECVD-deposited layers.


An exemplary coating structure 115 disposed on substrate 110 is shown in Table A.









TABLE A







Exemplary coating structure 1:













Quarter-wave





Optical



Refractive
Physical
Thickness



Index
Thickness
(QWOT)














Additional sub-layer 140G
Low

 0.1-0.25


Layer 120
High
2000 nm


Additional sub-layer 140F
Low

0.07-0.13


Additional sub-layer 140E
High

 0.5-0.65


Additional sub-layer 140D
Low

0.25-0.38


Additional sub-layer 140C
High

0.32-0.37


Additional sub-layer 140B
Low

0.5-0.6


Additional sub-layer 140A
High

 0.1-0.13


Substrate









In some embodiments, the low refractive index materials used for the additional layers 140B, D, F, and G may have a refractive index (at a wavelength of about 550 nm) may be in the range from about 1.45 to about 1.50 and an absorption (k) at a wavelength of about 400 nm of less than about 1−4.


In some embodiments, the high refractive index materials used for the additional layers 140A, C, and E may have a refractive index (at a wavelength of about 550 nm) may be in the range from about 1.85 to about 2.05 and an absorption (k) at a wavelength of about 400 nm of less than about 3′. In some embodiments, the layer 120 of the coating structure shown in Table A may include SiOxNyCz and may exhibit a refractive index (at a wavelength of about 550 nm) in the range from about 1.85 to about 2.05 and an absorption (k) at a wavelength of about 400 nm of less than about 3−4.


Other examples of coating structure 115 are shown in Tables B and C.









TABLE B







Exemplary coating structure 2.


Coating Structure 2














Physical
Refractive


Deposition

Material
thickness
Index


method
Substrate
Glass
(nm)
(at 550 nm)














PVD
Additional layer 140A
SiNx
9.1
1.871


PVD
Additional layer 140B
SiO2
51.9
1.48


PVD
Additional layer 140C
SiNx
26.9
1.871


PVD
Additional layer 140D
SiO2
31.0
1.48


PVD
Additional layer 140E
SiNx
45.2
1.871


PVD
Additional layer 140F
SiO2
10
1.48


PECVD
Layer 120
SiNx
2000
1.904


PVD or
Additional layer 140G
SiO2
21.4
1.48


PECVD
















TABLE C







Exemplary coating structure 3.


Coating Structure 3














Physical
Refractive


Deposition

Material
thickness
Index


method
Substrate
Glass
(nm)
(at 550 nm)














PVD
Additional layer 140A
AlOxNy
7.1
2.063


PVD
Additional layer 140B
SiO2
54.1
1.482


PVD
Additional layer 140C
AlOxNy
21.9
2.063


PVD
Additional layer 140D
SiO2
34.6
1.482


PVD
Additional layer 140E
AlOxNy
33.7
2.063


PVD
Additional layer 140F
SiO2
11.9
1.482


PECVD
Layer 120
SiNx
2000
2.062


PVD or
Additional layer 140G
SiO2
12
1.482


PECVD









In some embodiments, the additional layer 140 may include a thin layer of boron that is disposed on the layer 120. In some instances, this additional layer of boron may have a thickness of about 100 nm or less (e.g., about 90 nm or less, about 80 nm or less, about 70 nm or less, about 60 nm or less, about 50 nm or less, about 40 nm or less, about 30 nm or less, about 20 nm or less or about 10 nm or less. In some instances, this additional layer of boron may be the outermost layer of the article 100 and thus, may form the coated surface 101. In some instances, the layer 120 may have a non-homogenous composition such that the outermost portion of the layer 120 includes boron, while the remaining portion of the layer 120 is free of boron.


The coating structure 115 or the surface thereof may exhibit a smooth surface. In some embodiments, the surface may have a roughness Rq of about 8 nm or less. In some embodiments, the coating structure 115 or any of the layers thereof (e.g., 120, 140 etc.) may exhibit about 40 or less defects (having an average longest cross-sectional dimension in the range form about 1 micrometer to about 5 micrometers) per square millimeter area. In some embodiments, the coating structure 115 or any of the layers thereof (e.g., 120, 140 etc.) may exhibit about 10 or less, about 5 or less, or about 1 or less defects (having an average longest cross-sectional dimension in the range from 50 micrometer or greater) per square millimeter area. The coating structure 115 or any layers thereof (e.g., 120, 140 etc.) may exhibit a uniformity in refractive index and/or thickness. In some embodiments, the refractive index and/or thickness of the coating structure 115 or any layers thereof varies by less than about 1% across the surface thereof.


In some embodiments, the coating structure 115 or any layers thereof (e.g., 120, 140 etc.) exhibit a compressive stress of about −350 MPa or less (e.g., in the range from about 0 MPa to about −350 MPa, 0 MPa to about −300 MPa, or 0 MPa to about 250 MPa).


The article 100 of one or more embodiments may exhibit a colorlessness. The colorlessness described herein is with reference to the (L, a*, b*) colorimetry system, using an illuminant. The illuminant can include standard illuminants as determined by the CIE, including A illuminants (representing tungsten-filament lighting), B illuminants (daylight simulating illuminants), C illuminants (daylight simulating illuminants), D series illuminants (representing natural daylight), and F series illuminants (representing various types of fluorescent lighting).


In some examples, the article exhibits an article color transmittance having transmittance color coordinates at normal incidence in the CIE (L*, a*, b*) colorimetry system such that the distance between the article transmittance color coordinates and a reference point (also measured at normal incidence) is less than about 5 (e.g., less than about 4, less than about 3, less than about 2, less than about 1 or less than about 0.5). This distance may be referred to as “a reference point color shift”. In one or more embodiments, the article exhibits an article color reflectance having reflectance color coordinates at normal incidence in the (L*, a*, b*) colorimetry system such that the distance between the article reflectance color coordinates and a reference point (also measured at normal incidence) is less than about 5 (e.g., less than about 4, less than about 3, less than about 2, less than about 1 or less than about 0.5). This distance may be referred to as “a reference point color shift”. The article reflectance and/or transmittance color coordinates of the article are measured from the coated surface 101 at normal incidence. In one or more embodiments, the reference point may be the origin (0, 0) or (−2, −2) in the L*a*b* color space (or the color coordinates a*=0, b*=0 or a*=−2, b*=−2) or the transmittance color coordinates or reflectance color coordinates of the substrate 110. Where the reference point color shift of the article 100 is defined with respect to the substrate, the transmittance color coordinates of the article are compared to the transmittance color coordinates of the substrate and the reflectance color coordinates of the article are compared to the reflectance color coordinates of the substrate. In one or more specific embodiments, the reference point color shift of the article transmittance color and/or the article reflectance color with respect to the reference point may be less than 1 or even less than 0.5. In one or more specific embodiments, the reference point color shift for the article transmittance color and/or the article reflectance color with respect to the reference point may be 1.8, 1.6, 1.4, 1.2, 0.8, 0.6, 0.4, 0.2, 0 and all ranges and sub-ranges therebetween. Where the reference point is the color coordinates a*=0, b*=0, the color shift is calculated by the equation, color coordinate distance=√((a*)2+(b*)2). Where the reference point is the color coordinates a*=−2, b*=−2, the color shift is defined by √(a*article+2)2+(b*article+2)2) Where the reference point is the color coordinates of the substrate 110, the color shift is calculated by the equation, color coordinate distance=√((a*article−a*substrate)2 (b*article−b*substrate)2).


In one or more embodiments, the article 100 may exhibit an angular color shift (in transmittance or reflectance) of less than about 5, when viewed at an incident illumination angle away from a reference incident illumination angle under an illuminant. As used herein, the phrase “angular color shift” with respect to viewing angle refers to the change in both a* and b*, under the CIE (L*, a*, b*) colorimetry system.


The angular color shifts in reflection with viewing angle due to a shift in the spectral reflectance oscillations with incident illumination angle. Angular color shifts in transmittance with viewing angle are also due to the same shift in the spectral transmittance oscillation with incident illumination angle. The observed color and angular color shifts with incident illumination angle are often distracting or objectionable to device users, particularly under illumination with sharp spectral features such as fluorescent lighting and some LED lighting. Angular color shifts in transmission may also play a factor in color shift in reflection and vice versa. Factors in angular color shifts in transmission and/or reflection may also include angular color shifts due to viewing angle or angular color shifts away from a certain white point that may be caused by material absorption (somewhat independent of angle) defined by a particular illuminant or test system.


The reflectance and/or transmittance angular color coordinates of the article are measured from the coated surface 101. Color shift with respect to viewing angle may be determined using the following equation: √(a*2−a*1)2+(b*2−b*1)2), a* and b* coordinates (in transmittance or reflectance) of the article when viewed at a reference incident illumination angle (which may include normal incidence or about 6 degrees from normal incidence) (i.e., a*1, and b*1) and at an incident illumination angle away from the reference incident illumination angle (i.e., a*2, and b*2), provided that the incident illumination angle is different from the reference incident illumination angle and in some cases differs from the reference incident illumination angle by at least about 2 degrees or about 5 degrees. In some instances, a color shift of about 5 or less is exhibited by the article when viewed at various incident illumination angles from the reference incident illumination angle, under an illuminant. In some instances the color shift is about 4 or less, 3 or less, 2.5 or less, 2 or less, 1.9 or less, 1.8 or less, 1.7 or less, 1.6 or less, 1.5 or less, 1.4 or less, 1.3 or less, 1.2 or less, 1.1 or less, 1 or less, 0.9 or less, 0.8 or less, 0.7 or less, 0.6 or less, 0.5 or less, 0.4 or less, 0.3 or less, 0.2 or less, or 0.1 or less. In some embodiments, the color shift may be about 0.


The illuminant used to measure angular color shift can include standard illuminants as determined by the CIE, including A illuminants (representing tungsten-filament lighting), B illuminants (daylight simulating illuminants), C illuminants (daylight simulating illuminants), D series illuminants (representing natural daylight), and F series illuminants (representing various types of fluorescent lighting). In specific examples, the articles exhibit an angular color shift in reflectance and/or transmittance of about 5 or less when viewed at incident illumination angle from the reference illumination angle under a CIE F2, F10, F11, F12 or D65 illuminant, or more specifically, under a CIE F2 illuminant.


The reference illumination angle may include normal incidence, 5 degrees from normal incidence, 6 degrees from normal incidence, 10 degrees from normal incidence, 15 degrees from normal incidence, 20 degrees from normal incidence, 25 degrees from normal incidence, 30 degrees from normal incidence, 35 degrees from normal incidence, 40 degrees from normal incidence, 50 degrees from normal incidence, 55 degrees from normal incidence, or 60 degrees from normal incidence, provided the difference between the reference illumination angle and the incident illumination angle is at least about 1 degree, 2 degrees or about 5 degrees. The incident illumination angle may be, with respect to the reference illumination angle, in the range from about 5 degrees to about 80 degrees, from about 5 degrees to about 70 degrees, from about 5 degrees to about 65 degrees, from about 5 degrees to about 60 degrees, from about 5 degrees to about 55 degrees, from about 5 degrees to about 50 degrees, from about 5 degrees to about 45 degrees, from about 5 degrees to about 40 degrees, from about 5 degrees to about 35 degrees, from about 5 degrees to about 30 degrees, from about 5 degrees to about 25 degrees, from about 5 degrees to about 20 degrees, from about 5 degrees to about 15 degrees, and all ranges and sub-ranges therebetween, away from the reference illumination angle. The article may exhibit the angular color shifts in reflectance and/or transmittance described herein at and along all the incident illumination angles in the range from about 2 degrees to about 80 degrees (or from about 10 degrees to about 80 degrees, or from about 20 degrees to about 80 degrees), when the reference illumination angle is normal incidence. In some embodiments, the article may exhibit the angular color shifts in reflectance and/or transmittance described herein at and along all the incident illumination angles in the range from about 2 degrees to about 80 degrees (or from about 10 degrees to about 80 degrees, or from about 20 degrees to about 80 degrees), when the difference between the incident illumination angle and the reference illumination angle is at least about 1 degree, 2 degrees or about 5 degrees. In one example, the article may exhibit an angular color shift in reflectance and/or transmittance of 5 or less (e.g., 4 or less, 3 or less or about 2 or less) at any incident illumination angle in the range from about 2 degrees to about 60 degrees, from about 5 degrees to about 60 degrees, or from about 10 degrees to about 60 degrees away from a reference illumination angle equal to normal incidence. In other examples, the article may exhibit an angular color shift in reflectance and/or transmittance of 5 or less (e.g., 4 or less, 3 or less or about 2 or less) when the reference illumination angle is 10 degrees and the incident illumination angle is any angle in the range from about 12 degrees to about 60 degrees, from about 15 degrees to about 60 degrees, or from about 20 degrees to about 60 degrees away from the reference illumination angle.


In some embodiments, the angular color shift may be measured at all angles between a reference illumination angle (e.g., normal incidence) and an incident illumination angle in the range from about 20 degrees to about 80 degrees. In other words, the angular color shift may be measured and may be less than about 5 or less than about 2, at all angles in the range from about 0 degrees and 20 degrees, from about 0 degrees to about 30 degrees, from about 0 degrees to about 40 degrees, from about 0 degrees to about 50 degrees, from about 0 degrees to about 60 degrees or from about 0 degrees to about 80 degrees.


In some instances, the article transmittance color shift, article reflectance color shift and/or angular color shift may be defined in terms of a radius of 1 or less, 0.5 or less, or about 0.2 or less from a reference point that is determined by the illuminant used. Where D65 is utilized, and the radius may be determined from a reference point of (L*=96.9 a*=−0.01, b*=0.15) and at an incident illumination angle of about 10 degrees. In another embodiment, where F2 is utilized, the radius may be determined from a reference point of (L*=33.8, a*=0.07, b*=−0.52) at an incident illumination angle in the range from about 5 degrees to about 60 degrees.


The substrate 110 may be inorganic and may include an amorphous substrate, a crystalline substrate or a combination thereof. In some specific embodiments, the substrate 110 may specifically exclude plastic and/or metal substrates. In some embodiments, the substrate 110 may be organic and specifically polymeric. Examples of suitable polymers include, without limitation: thermoplastics including polystyrene (PS) (including styrene copolymers and blends), polycarbonate (PC) (including copolymers and blends), polyesters (including copolymers and blends, including polyethyleneterephthalate and polyethyleneterephthalate copolymers), polyolefins (PO) and cyclicpolyolefins (cyclic-PO), polyvinylchloride (PVC), acrylic polymers including polymethyl methacrylate (PMMA) (including copolymers and blends), thermoplastic urethanes (TPU), polyetherimide (PEI) and blends of these polymers with each other. Other exemplary polymers include epoxy, styrenic, phenolic, melamine, and silicone resins.


In one or more embodiments, the substrate exhibits a refractive index in the range from about 1.45 to about 1.55. In specific embodiments, the substrate 110 may exhibit an average strain-to-failure at a surface on one or more opposing major surface that is 0.5% or greater, 0.6% or greater, 0.7% or greater, 0.8% or greater, 0.9% or greater, 1% or greater, 1.1% or greater, 1.2% or greater, 1.3% or greater, 1.4% or greater 1.5% or greater or even 2% or greater, as measured using ball-on-ring testing using at least 5, at least 10, at least 15, or at least 20 samples. In specific embodiments, the substrate 110 may exhibit an average strain-to-failure at its surface on one or more opposing major surface of about 1.2%, about 1.4%, about 1.6%, about 1.8%, about 2.2%, about 2.4%, about 2.6%, about 2.8%, or about 3% or greater.


Suitable substrates 110 may exhibit an elastic modulus (or Young's modulus) in the range from about 30 GPa to about 120 GPa. In some instances, the elastic modulus of the substrate may be in the range from about 30 GPa to about 110 GPa, from about 30 GPa to about 100 GPa, from about 30 GPa to about 90 GPa, from about 30 GPa to about 80 GPa, from about 30 GPa to about 70 GPa, from about 40 GPa to about 120 GPa, from about 50 GPa to about 120 GPa, from about 60 GPa to about 120 GPa, from about 70 GPa to about 120 GPa, and all ranges and sub-ranges therebetween.


In one or more embodiments, the substrate 110 may be amorphous and may include glass, which may be strengthened or non-strengthened. Examples of suitable glass include soda lime glass, alkali-free glass, alkali aluminosilicate glass, alkali containing borosilicate glass and alkali aluminoborosilicate glass. In some variants, the glass may be free of lithia. In one or more alternative embodiments, the substrate 110 may include crystalline substrates such as glass ceramic substrates (which may be strengthened or non-strengthened) or may include a single crystal structure, such as sapphire. In one or more specific embodiments, the substrate 110 includes an amorphous base (e.g., glass) and a crystalline cladding (e.g., sapphire layer, a polycrystalline alumina layer and/or or a spinel (MgAl2O4) layer).


The substrate 110 may be substantially planar or sheet-like, although other embodiments may utilize a curved or otherwise shaped or sculpted substrate. The substrate 110 may be substantially optically clear, transparent and free from light scattering. In such embodiments, the substrate may exhibit an average transmittance over the optical wavelength regime of about 85% or greater, about 86% or greater, about 87% or greater, about 88% or greater, about 89% or greater, about 90% or greater, about 91% or greater or about 92% or greater. In one or more alternative embodiments, the substrate 110 may be opaque or exhibit an average transmittance over the optical wavelength regime of less than about 10%, less than about 9%, less than about 8%, less than about 7%, less than about 6%, less than about 5%, less than about 4%, less than about 3%, less than about 2%, less than about 1%, or less than about 0%. In substrate 110 may optionally exhibit a color, such as white, black, red, blue, green, yellow, orange etc.


Additionally or alternatively, the physical thickness of the substrate 110 may vary along one or more of its dimensions for aesthetic and/or functional reasons. For example, the edges of the substrate 110 may be thicker as compared to more central regions of the substrate 110. The length, width and physical thickness dimensions of the substrate 110 may also vary according to the application or use of the article 100.


The substrate 110 may be provided using a variety of different processes. For instance, where the substrate 110 includes an amorphous substrate such as glass, various forming methods can include float glass processes and down-draw processes such as fusion draw and slot draw.


Once formed, a substrate 110 may be strengthened to form a strengthened substrate. As used herein, the term “strengthened substrate” may refer to a substrate that has been chemically strengthened, for example through ion-exchange of larger ions for smaller ions in the surface of the substrate. However, other strengthening methods known in the art, such as thermal tempering, or utilizing a mismatch of the coefficient of thermal expansion between portions of the substrate to create compressive stress and central tension regions, may be utilized to form strengthened substrates.


Where the substrate is chemically strengthened by an ion exchange process, the ions in the surface layer of the substrate are replaced by—or exchanged with—larger ions having the same valence or oxidation state. Ion exchange processes are typically carried out by immersing a substrate in a molten salt bath containing the larger ions to be exchanged with the smaller ions in the substrate. It will be appreciated by those skilled in the art that parameters for the ion exchange process, including, but not limited to, bath composition and temperature, immersion time, the number of immersions of the substrate in a salt bath (or baths), use of multiple salt baths, additional steps such as annealing, washing, and the like, are generally determined by the composition of the substrate and the desired compressive stress (CS), depth of compressive stress layer (or depth of layer) of the substrate that result from the strengthening operation. By way of example, ion exchange of alkali metal-containing glass substrates may be achieved by immersion in at least one molten bath containing a salt such as, but not limited to, nitrates, sulfates, and chlorides of the larger alkali metal ion. The temperature of the molten salt bath typically is in a range from about 380° C. up to about 450° C., while immersion times range from about 15 minutes up to about 40 hours. However, temperatures and immersion times different from those described above may also be used.


In addition, non-limiting examples of ion exchange processes in which glass substrates are immersed in multiple ion exchange baths, with washing and/or annealing steps between immersions, are described in U.S. patent application Ser. No. 12/500,650, filed Jul. 10, 2009, by Douglas C. Allan et al., entitled “Glass with Compressive Surface for Consumer Applications” and claiming priority from U.S. Provisional Patent Application No. 61/079,995, filed Jul. 11, 2008, in which glass substrates are strengthened by immersion in multiple, successive, ion exchange treatments in salt baths of different concentrations; and U.S. Pat. No. 8,312,739, by Christopher M. Lee et al., issued on Nov. 20, 2012, and entitled “Dual Stage Ion Exchange for Chemical Strengthening of Glass,” and claiming priority from U.S. Provisional Patent Application No. 61/084,398, filed Jul. 29, 2008, in which glass substrates are strengthened by ion exchange in a first bath is diluted with an effluent ion, followed by immersion in a second bath having a smaller concentration of the effluent ion than the first bath. The contents of U.S. patent application Ser. No. 12/500,650 and U.S. Pat. No. 8,312,739 are incorporated herein by reference in their entirety.


The degree of chemical strengthening achieved by ion exchange may be quantified based on the parameters of central tension (CT), surface CS, and depth of layer (DOL). Surface CS may be measured near the surface or within the strengthened glass at various depths. A maximum CS value may include the measured CS at the surface (CSs) of the strengthened substrate. The CT, which is computed for the inner region adjacent the compressive stress layer within a glass substrate, can be calculated from the CS, the physical thickness t, and the DOL. CS and DOL are measured using those means known in the art. Such means include, but are not limited to, measurement of surface stress (FSM) using commercially available instruments such as the FSM-6000, manufactured by Luceo Co., Ltd. (Tokyo, Japan), or the like, and methods of measuring CS and DOL are described in ASTM 1422C-99, entitled “Standard Specification for Chemically Strengthened Flat Glass,” and ASTM 1279.19779 “Standard Test Method for Non-Destructive Photoelastic Measurement of Edge and Surface Stresses in Annealed, Heat-Strengthened, and Fully-Tempered Flat Glass,” the contents of which are incorporated herein by reference in their entirety. Surface stress measurements rely upon the accurate measurement of the stress optical coefficient (SOC), which is related to the birefringence of the glass substrate. SOC in turn is measured by those methods that are known in the art, such as fiber and four point bend methods, both of which are described in ASTM standard C770-98 (2008), entitled “Standard Test Method for Measurement of Glass Stress-Optical Coefficient,” the contents of which are incorporated herein by reference in their entirety, and a bulk cylinder method. The relationship between CS and CT is given by the expression (1):

CT=(CS·DOL)/(t−2DOL)  (1),

wherein t is the physical thickness (μm) of the glass article. In various sections of the disclosure, CT and CS are expressed herein in megaPascals (MPa), physical thickness t is expressed in either micrometers (μm) or millimeters (mm) and DOL is expressed in micrometers (μm).


In one embodiment, a strengthened substrate 110 can have a surface CS of 250 MPa or greater, 300 MPa or greater, e.g., 400 MPa or greater, 450 MPa or greater, 500 MPa or greater, 550 MPa or greater, 600 MPa or greater, 650 MPa or greater, 700 MPa or greater, 750 MPa or greater or 800 MPa or greater. The strengthened substrate may have a DOL of 10 μm or greater, 15 μm or greater, 20 μm or greater (e.g., 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm or greater) and/or a CT of 10 MPa or greater, 20 MPa or greater, 30 MPa or greater, 40 MPa or greater (e.g., 42 MPa, 45 MPa, or 50 MPa or greater) but less than 100 MPa (e.g., 95, 90, 85, 80, 75, 70, 65, 60, 55 MPa or less). In one or more specific embodiments, the strengthened substrate has one or more of the following: a surface CS greater than 500 MPa, a DOL greater than 15 μm, and a CT greater than 18 MPa.


Example glasses that may be used in the substrate may include alkali aluminosilicate glass compositions or alkali aluminoborosilicate glass compositions, though other glass compositions are contemplated. Such glass compositions are capable of being chemically strengthened by an ion exchange process. One example glass composition comprises SiO2, B2O3 and Na2O, where (SiO2+B2O3)≥66 mol. %, and Na2O≥9 mol. %. In an embodiment, the glass composition includes at least 6 wt. % aluminum oxide. In a further embodiment, the substrate includes a glass composition with one or more alkaline earth oxides, such that a content of alkaline earth oxides is at least 5 wt. %. Suitable glass compositions, in some embodiments, further comprise at least one of K2O, MgO, and CaO. In a particular embodiment, the glass compositions used in the substrate can comprise 61-75 mol. % SiO2; 7-15 mol. % Al2O3; 0-12 mol. % B2O3; 9-21 mol. % Na2O; 0-4 mol. % K2O; 0-7 mol. % MgO; and 0-3 mol. % CaO.


A further example glass composition suitable for the substrate comprises: 60-70 mol. % SiO2; 6-14 mol. % Al2O3; 0-15 mol. % B2O3; 0-15 mol. % Li2O; 0-20 mol. % Na2O; 0-10 mol. % K2O; 0-8 mol. % MgO; 0-10 mol. % CaO; 0-5 mol. % ZrO2; 0-1 mol. % SnO2; 0-1 mol. % CeO2; less than 50 ppm As2O3; and less than 50 ppm Sb2O3; where 12 mol. %≤(Li2O+Na2O+K2O)≤20 mol. % and 0 mol. %≤(MgO+CaO)≤10 mol. %.


A still further example glass composition suitable for the substrate comprises: 63.5-66.5 mol. % SiO2; 8-12 mol. % Al2O3; 0-3 mol. % B2O3; 0-5 mol. % Li2O; 8-18 mol. % Na2O; 0-5 mol. % K2O; 1-7 mol. % MgO; 0-2.5 mol. % CaO; 0-3 mol. % ZrO2; 0.05-0.25 mol. % SnO2; 0.05-0.5 mol. % CeO2; less than 50 ppm As2O3; and less than 50 ppm Sb2O3; where 14 mol. %≤(Li2O+Na2O+K2O)≤18 mol. % and 2 mol. %≤(MgO+CaO)≤7 mol. %.


In a particular embodiment, an alkali aluminosilicate glass composition suitable for the substrate comprises alumina, at least one alkali metal and, in some embodiments, greater than 50 mol. % SiO2, in other embodiments at least 58 mol. % SiO2, and in still other embodiments at least 60 mol. % SiO2, wherein the ratio











Al
2



O
3


+


B
2



O
3





modifiers


>
1

,





where in the ratio the components are expressed in mol. % and the modifiers are alkali metal oxides. This glass composition, in particular embodiments, comprises: 58-72 mol. % SiO2; 9-17 mol. % Al2O3; 2-12 mol. % B2O3; 8-16 mol. % Na2O; and 0-4 mol. % K2O, wherein the ratio










Al
2



O
3


+


B
2



O
3





modifiers


>
1.




In still another embodiment, the substrate may include an alkali aluminosilicate glass composition comprising: 64-68 mol. % SiO2; 12-16 mol. % Na2O; 8-12 mol. % Al2O3; 0-3 mol. % B2O3; 2-5 mol. % K2O; 4-6 mol. % MgO; and 0-5 mol. % CaO, wherein: 66 mol. %≤SiO2+B2O3+CaO≤69 mol. %; Na2O+K2O+B2O3+MgO+CaO+SrO>10 mol. %; 5 mol. %≤MgO+CaO+SrO≤8 mol. %; (Na2O+B2O3)—Al2O3≤2 mol. %; 2 mol. %≤Na2O—Al2O3≤6 mol. %; and 4 mol. %≤(Na2O+K2O)—Al2O3≤10 mol. %.


In an alternative embodiment, the substrate may comprise an alkali aluminosilicate glass composition comprising: 2 mol % or more of Al2O3 and/or ZrO2, or 4 mol % or more of Al2O3 and/or ZrO2.


Where the substrate 110 includes a crystalline substrate, the substrate may include a single crystal, which may include Al2O3. Such single crystal substrates are referred to as sapphire. Other suitable crystalline materials include polycrystalline alumina layer and/or spinel (MgAl2O4).


Optionally, the crystalline substrate 110 may include a glass ceramic substrate, which may be strengthened or non-strengthened. Examples of suitable glass ceramics may include Li2O—Al2O3—SiO2 system (i.e. LAS-System) glass ceramics, MgO—Al2O3—SiO2 system (i.e. MAS-System) glass ceramics, and/or glass ceramics that include a predominant crystal phase including β-quartz solid solution, β-spodumene ss, cordierite, and lithium disilicate. The glass ceramic substrates may be strengthened using the chemical strengthening processes disclosed herein. In one or more embodiments, MAS-System glass ceramic substrates may be strengthened in Li2SO4 molten salt, whereby an exchange of 2Li+ for Mg2+ can occur.


The substrate 110 according to one or more embodiments can have a physical thickness ranging from about 100 μm to about 5 mm. Example substrate 110 physical thicknesses range from about 100 μm to about 500 μm (e.g., 100, 200, 300, 400 or 500 μm). Further example substrate 110 physical thicknesses range from about 500 μm to about 1000 μm (e.g., 500, 600, 700, 800, 900 or 1000 μm). The substrate 110 may have a physical thickness greater than about 1 mm (e.g., about 2, 3, 4, or 5 mm). In one or more specific embodiments, the substrate 110 may have a physical thickness of 2 mm or less or less than 1 mm. The substrate 110 may be acid polished or otherwise treated to remove or reduce the effect of surface flaws.


A third aspect of this disclosure pertains to a method of forming the coating materials described herein. In one or more embodiments, the method includes forming the coating material using a chemical vapor deposition process. In specific embodiments, a plasma-enhanced chemical vapor deposition process may be utilized to form the coating materials. Without being bound by theory, such processes allow for a greater or faster deposition rate, as compared to rates typically achieved by physical vapor deposition processes. In addition, the methods described herein may include selectively etching the formed coating material, the deposition chamber or both during formation of the coating material. In such embodiments, the resulting coating material exhibits lower defects in terms of size, type and frequency of defects. The material may be formed in one or more layers, as described herein.


In one or more embodiments, the method includes introducing a source gas into a chamber, and forming the coating material as described herein by chemical vapor deposition on a substrate. The method may include generating a plasma in the chamber by inductively coupled plasma (ICP) methods, electron cyclotron resonance (ECR) or capacitively coupled parallel plate methods. The source gas can include any one or more of a silicon source gas, an aluminum source gas and a nitrogen source gas. In one or more embodiments, the silicon source gas may include silane, the aluminum source gas may include AlCl3, trimethylaluminum Al2(CH3)6, or other known aluminum source gases, and the nitrogen source gas may include nitrogen, nitrous oxide, ammonia or a combination thereof. In some embodiments, additional gases may be introduced into the chambers such as a hydrogen source gas (e.g., silane or hydrogen), a carbon source gas (e.g., carbon monoxide, carbon dioxide, acetylene, butane, and methane), oxygen, a fluorine source gas (e.g., silicon tetrafluoride, and a fluorocarbon), a boron source gas (e.g., B2H6, BF3 or other known boron sources), or a combination thereof. The deposition composition may be about 550° C. or less or about 150° C. or less. In one or more embodiments, the method may include introducing a substrate into the chamber before forming the coating material. The method may include forming one or more additional layers between the coating material and the substrate or on top of the coating material. Optionally, the method may include one or more cleaning steps before forming the coating material and/or any one or more of the additional layers.


EXAMPLES

Various embodiments will be further clarified by the following examples.


In the following examples, layers of coating materials according to the embodiments described herein and a known material were formed on substrates available under the trademark Eagle XG™, from Corning Incorporated. The thickness, index, and optical band gap of the layers was measured with an n&k analyzer (n&k Technology, Inc., San Jose Calif.) using single F-K oscillator model included accompanying software. Hardness was measured according to the Berkovich Indenter Hardness Test and Young's modulus was measured using a Berkovich indenter using known methods in the art.


The hydrogen content of the layers was measured by nuclear reaction analysis (NRA) using a 2 μC of charge of 15N beam at 6.38 MeV. The composition of the layers for components other than hydrogen was determined by x-ray photoelectron spectroscopy (XPS) using a PHI-Quantum 2000 XPS instrument. The data were analyzed using the software package provided by the vendor of the XPS unit. For composition measurements, a region measuring 2 mm×2 mm were selected from the surface of the layer; a point measuring 0.2 mm in diameter was selected at the center of the 2 mm×2 mm region and the composition of the layer at the 0.2 mm diameter point was measured. The 2 mm×2 mm region was then sputtered for a certain period of time ranging from a fraction of a minute to several minutes using Ar+ ions accelerated at 4 kV resulting in current at the surface of approximately 15 W. Following the sputter step, the composition of the 0.2 mm point at the center of the 2 mm×2 mm sputtered in the same manner and the region was measured again. This process was repeated numerous times until the entire depth of the layer was sputtered and substrate was exposed. In this manner, depth profiles of concentrations of the different elements as a function of layer thickness were obtained. The layer compositions were calculated by averaging the concentrations of each element in the bulk of the layer, avoiding the surface region, typically ranging from a depth from about 20 nm to about 200 nm into the layer and extending to the underlying substrate. The precision of this method of calculating the composition, as measured by the standard deviation of composition of the multiple depths, is approximately ±0.5 atomic %. Sputter depth profiling using Ar ions may result in preferential sputtering of certain elements such that the bulk composition measured by XPS may differ from the actual bulk composition. Correction factors accounting for preferential sputtering effects were not applied; compositions were calculated using only the methodology described above. It should be noted that a comparison of XPS depth profiles obtained as described above and bulk composition measurements using other analytical techniques for comparable oxynitride materials is available and indicates that the magnitude of variation between XPS depth profiles measured according to the methodology described herein and the composition measured by these other techniques is small (Martin, D. M., Enlund, J., Kappertz, O, Jensen, J. “Comparison of XPS and ToF-ERDA Measurement of High-k Dielectric Materials,” Journal of Physics: Conference Series 100 (2008) 012036).


Example 1

In Examples 1A-1F, single layers having a thickness of 400 nm and the following coating material compositions (A-F) were formed as described above: SiNx, SiNxFy, SiOxNy, SiCxNy, SiCxOyNz, and SiOxCy. The single layers were each formed on separate substrates using a Plasma-Therm Versaline High Density Plasma (“HDP”) CVD tool. The Plasma-Therm Versaline HDPCVD tool is an inductively coupled plasma (“ICP”) CVD system which uses an 2 MHz inductively coupled plasma source to attain high ionization independent of substrate bias which is set by a 13.56 MHz RF supply driving the platen on which the substrate is placed. Such systems permit fully dense films to be deposited at lower substrate temperatures than a conventional parallel plate PECVD. The process conditions included using deposition gases of silane, nitrogen, hydrogen, methane, carbon dioxide, nitrous oxide, oxygen, hydrogen, and silicon tetrafluoride (as appropriate, in units of sccm, and as shown in Table 1) and a substrate temperature of about 150° C. and a pressure (P) of 12.5 or 5 mtorr, as shown in Table 1. Argon was flowed at a rate of 50 sccm and RF power was supplied to the coil at 600 W or 1500 W, as shown in Table 1. The deposition time is reported in seconds in Table 1.









TABLE 1







Examples 1A-1F deposition conditions.

































Coating















material


Ex.
Time
P
SiH4
N2
H2
O2
N2O
CH4
CO2
SiF4
Power
Bias
Comp.























1A-1
210
12.5
29.5
18.5
29.5
0
0
0
0
0
1500
0
SiNx


1A-2
210
12.5
27
21
0
0
0
0
0
0
1500
0
SiNx


1A-3
210
12.5
29.5
18.5
0
0
0
0
0
0
1500
0
SiNx


1A-4
210
12.5
24
24
0
0
0
0
0
0
1500
0
SiNx


1A-5
210
12.5
22.6
17.4
10
0
0
0
0
0
1500
50
SiNx


1A-6
210
12.5
24
16
10
0
0
0
0
0
1500
50
SiNx


1A-7
210
12.5
22.6
17.4
60
0
0
0
0
0
1500
0
SiNx


1A-8
210
12.5
23.3
16.7
60
0
0
0
0
0
1500
0
SiNx


1A-9
210
12.5
27
21
0
0
0
0
0
0
1500
0
SiNx


1A-10
272
12.5
22.6
17.4
50
0
0
0
0
0
1500
0
SiNx


1A-11
232
12.5
23.7
16.3
0
0
0
0
0
0
1500
20
SiNx


1A-12
236
12.5
23.7
16.3
0
0
0
0
0
0
1500
0
SiNx


1A-13
210
12.5
27
21
0
0
0
0
0
0
1500
0
SiNx


1A-14
221.1
12.5
25.7
20
2.4
0
0
0
0
0
1500
0
SiNx


1A-15
233.3
12.5
24.3
18.9
4.8
0
0
0
0
0
1500
0
SiNx


1A-16
262.5
12.5
21.6
16.8
9.6
0
0
0
0
0
1500
0
SiNx


1A-17
420
12.5
13.5
10.5
24
0
0
0
0
0
1500
0
SiNx


1B-1
210
12.5
24
21
0
0
0
0
0
3
1500
0
SiNxFy


1B-2
210
12.5
18
21
0
0
0
0
0
9
1500
0
SiNxFy


1B-3
210
12.5
13.5
21
0
0
0
0
0
13.5
1500
0
SiNxFy


1C-1
240
12.5
22.6
17.4
0
0
3
0
0
0
1500
0
SiOxNy


1C-2
240
12.5
22.6
17.4
0
0
5
0
0
0
1500
0
SiOxNy


1C-3
240
12.5
22.6
17.4
0
2
0
0
0
0
1500
0
SiOxNy


1C-4
240
12.5
22.6
17.4
0
10
0
0
0
0
1500
0
SiOxNy


1C-5
210
12.5
25.9
20.1
0
2
0
0
0
0
1500
0
SiOxNy


1C-6
210
12.5
24.8
19.3
0
4
0
0
0
0
1500
0
SiOxNy


1C-7
210
12.5
23.6
18.4
0
6
0
0
0
0
1500
0
SiOxNy


1D-1
240
12.5
22.6
17.4
0
0
0
5
0
0
1500
0
SiCxNy


1D-2
240
12.5
22.6
17.4
0
0
0
50
0
0
1500
0
SiCxNy


1D-3
210
12.5
25.9
20.1
0
0
0
2
0
0
1500
0
SiCxNy


1D-4
210
12.5
24.8
19.3
0
0
0
4
0
0
1500
0
SiCxNy


1D-5
210
12.5
21.4
16.6
0
0
0
10
0
0
1500
0
SiCxNy


1E-1
240
12.5
22.6
17.4
0
0
0
0
3
0
1500
0
SiCxOyNz


1E-2
240
12.5
22.6
17.4
0
0
0
0
10
0
1500
0
SiCxOyNz


1F-1
300
5
15
0
0
0
0
20
10
0
600
30
SiOxCy


1F-2
300
5
15
0
0
0
0
15
15
0
600
30
SiOxCy


1F-3
300
5
15
0
0
10
0
20
0
0
600
30
SiOxCy


1F-4
300
5
15
0
0
15
0
15
0
0
600
30
SiOxCy









After the layers were formed on the substrates, NRA and XPS were used to measure the ranges of compositions in each layer. The hardness for each layer was then measured using the Berkovich Indenter Hardness Test. The measured hardness of the layers is plotted as a function of the compositional ratio of nitrogen (atomic %) to silicon (atomic %) in FIG. 4. As shown in FIG. 4, layers exhibiting the compositional ratio of nitrogen (in atomic %) to silicon (in atomic %) of about 0.8 or greater (or about 0.85 or greater) also exhibited a hardness of about 15 GPa or greater or about 17 GPa or greater. These values can be contrasted with SiNx layers having similar thicknesses but formed by sputtering or PVD processes. PVD-formed SiNx layers exhibit a maximum hardness when the composition ratio nitrogen (atomic %) to silicon (atomic %) is about 0.75.



FIG. 5 illustrates the measured hardness of the layers of Examples 1A-1F, plotted as a function of the amount of nitrogen (in atomic %). As shown in FIG. 5, layers having a nitrogen content of greater than about 30 atomic % or greater than about 35 atomic % (but less than about 40-41 atomic %) exhibited a hardness of about 17 GPa or greater.


The measured hardness of the layers of Examples 1A-1F is plotted as a function of the amount of silicon (in atomic %) in FIG. 6. As shown in FIG. 6, layers having a silicon content in the range from about 37 atomic % to about 43 atomic % exhibited the greatest hardness (i.e., about 27 GPa).



FIG. 7 is a graph illustrating the measured hardness of the layers of Examples 1B-1E as a function of the oxygen, carbon and fluorine fraction of anions (i.e., the sum of the oxygen, nitrogen, fluorine and carbon content in atomic %) in layers. As shown in FIG. 7, as the amount of nitrogen decreases, the hardness of the layers decreases. Layers having an oxygen, carbon, and/or fluorine fraction of anions of less than about 0.2 exhibited a hardness of about 15 GPa or greater.


The measured hardness of the layers of Examples 1A-1F is plotted as a function of the amount of hydrogen (in atomic %) in FIG. 8. Layers having a hydrogen content of about 18 atomic % exhibited the highest hardness, with layers having a hydrogen content in the range from about 15 atomic % to about 28 atomic % exhibiting a hardness of about 17 GPa or greater.


The optical band gap and refractive index values of the layers of Examples 1A-1F were measured. FIG. 9 shows the measured hardness of the layers as a function of optical band gap. In general, coating materials exhibiting an optical band gap of about 3.5 eV or greater (3.5 eV being a wavelength of about 354 nm) will also exhibits a minimum of optical absorption across at least a portion of the optical wavelength regime (e.g., from about 380 nm to about 700 nm or 3.26 to 1.77 eV). These coating materials therefore transmit the full visible spectrum without significant absorption and appear colorless. FIG. 9 shows that layers with a hardness above 15 GPa have an optical band gap of 3.5 to 5 eV. FIG. 10 and FIG. 10A each plots the measured hardness against the measured refractive index at a wavelength of 632 nm of Examples 1A-1F. The measured hardness reached a maximum value at a refractive index range from about 1.90 to about 1.95. Layers exhibiting a hardness of greater than about 15 GPa also exhibited refractive index values in the range from about 1.8 to 2.1. FIG. 11 shows refractive index at 632 nm as a function of optical band gap. SiNx, SiOxNy, and SiNxFy layers were observed to lie in a line. Carbon containing layers exhibited a lower refractive index for a given band gap range, or lower band gap for a given refractive index. This is consistent with hardness results which seem to indicate that layers with carbon exhibited a lower density. Without being bound by theory, it is believed that a sudden drop in optical band gap indicates the increase of Si—Si or C—C bonds over the number of Si—N bonds in the material. Accordingly, a reduction in hardness and a reduction of optical band gap was observed in such materials.


Example 2

In Examples 2A-2D, single layers having a thickness of about 2000 nm and the following coating material compositions (A-D) were formed as described above: SiNx, SiNxFy, and SiOxNy, SiCxNy. The single layers were each formed on separate substrates using a Plasma-Therm Versaline HDP tool. The process conditions included the using deposition gases of silane, nitrogen, hydrogen, methane, oxygen, and silicon tetrafluoride (in units of sccm as appropriate, and shown in Table 2) at a substrate temperature of about 150° C. and a pressure of 12.5 mtorr, as shown in Table 2. Argon was flowed at a rate of 50 sccm and RF power was supplied to the coil at 600 W or 1500 W, as shown in Table 2. The deposition time is reported in seconds in Table 2.









TABLE 2







Examples 2A-2D deposition conditions.



















Coating


Example
Time
Pressure
SiH4
N2

material Comp.





















H2



2A-1
1100
12.5
28
20
0
SiNx


2A-2
1100
12.5
27.5
20.5
0
SiNx


2A-3
1100
12.5
27
21
0
SiNx


2A-4
1100
12.5
26.5
21.5
0
SiNx


2A-5
1100
12.5
26
22
0
SiNx


2A-6
1100
12.5
30
18
0
SiNx


2A-7
1100
12.5
32
16
0
SiNx


2A-8
1100
12.5
24
24
0
SiNx


2A-9
1100
12.5
22
26
0
SiNx







SiF4


2B-1
1080.7
12.5
27
21
0
SiNx


2B-2
945.6
12.5
24
21
3
SiNxFy


2B-3
634.7
12.5
18
21
9
SiNxFy


2B-4
529.1
12.5
13.5
21
13.5
SiNxFy







O2


2C-1
1071.2
12.5
27
21
0
SiNx


2C-2
1059.1
12.5
25.9
20.1
2
SiOxNy


2C-3
1032.4
12.5
24.8
19.3
4
SiOxNy


2C-4
1063.5
12.5
23.6
18.4
6
SiOxNy







CH4


2D-1
1071.2
12.5
27
21
0
SiNx


2D-2
1105
12.5
25.9
20.1
2
SiCxNy


2D-3
1115.7
12.5
24.8
19.3
4
SiCxNy


2D-4
1105
12.5
21.4
16.6
10
SiCxNy









After the layers of Examples 2A-2D were formed on the substrates, NRA and XPS were used to measure the compositions of each layer. The hardness for each layer was then measured using the Berkovich Indenter Hardness Test. FIG. 12 is a graph plotting the measured hardness values for Examples 2A-2D against the compositional ratio of nitrogen (atomic %) to silicon (atomic %). As shown in FIG. 12, layers including the compositional ratio N:Si (in atomic %) of about 0.8 or greater (or about 0.85 or greater) exhibited a hardness of about 15 GPa or greater or about 17 GPa or greater. As with Examples 1A-1F, these compositional ratio values can be contrasted with known SiNx layers having similar thicknesses but formed by sputtering or PVD processes. PVD-formed SiNx layers exhibit a maximum hardness when the composition ratio nitrogen (atomic %) to silicon (atomic %) is about 0.75.



FIG. 13 is a graph showing the measured hardness values of Examples 2B-2D against the amount (in atomic %) of fluorine, oxygen, and carbon in the layers. Layers having less than about 7 atomic % of any one or more of fluorine, oxygen and carbon exhibited a hardness of about 17 GPa or greater. Without being bound by theory, it appears as though the inclusion of a small amount of carbon can increase hardness to a greater degree than similarly small amounts of fluorine or oxygen additions. Thus, in some embodiments, the coating material may include up to about 4 atomic % carbon.



FIG. 14 is a graph showing the measured hardness versus the measured refractive index at a wavelength of about 632 nm of the layers of examples 2A-2D. Layers having a hardness greater than 17 GPa also exhibited refractive index values in the range from about 1.85 to about 2.05.


Example 3

In Examples 3A-3H, single layers having a thickness of about 2000 nm and a composition of SiNx were each formed on separate substrates using a Plasma-Therm Versaline HDP tools, with the addition of a substrate bias and/or hydrogen. The process conditions included the using deposition gases of silane, nitrogen, and hydrogen (in units of sccm as appropriate, and shown in Table 3) at a substrate temperature of about 150° C. and a pressure of 12.5 mtorr, as shown in Table 3. Argon was flowed at a rate of 50 sccm and RF power was supplied to the coil at 1500 W. The deposition time is reported in seconds in Table 3.









TABLE 3







Examples 3A-3H deposition conditions.



















Coating








material


Example
Time
SiH4
N2
H2
Bias
Comp.
















3A
1100
27
21
0
0
SiNx


3B
1100
27
21
0
10
SiNx


3C
1100
27
21
0
20
SiNx


3D
1100
27
21
0
50
SiNx


3E
1375
21.6
16.8
9.6
0
SiNx


3F
2200
13.5
10.5
24
0
SiNx


3G
1375
21.6
16.8
9.6
50
SiNx


3H
2200
13.5
10.5
24
50
SiNx









Table 4 shows the measured stress, thickness, optical band gap, refractive index n and k values at a wavelength of about 632 nm, Young's modulus (E) and hardness (H) values of the layers. The primary impact of both substrate bias and hydrogen additions was to decrease the stress in the layers by making the stress even more compressive. It is noted that a negative value for stress indicates compressive stress and a positive value for stress indicates a tensile stress. Excessive stress in the layers can cause unacceptable bow of the underlying substrate. Such undesirable bowing may be mitigated by disposing a second layer (or “stress compensating layer”) on the opposite side of the substrate, which can counteract the stress of the first layer. A stress of less than |300 GPa| (in absolute terms) is required to produce a sufficiently flat coated substrate, without a stress compensating layer. The impact of bias and hydrogen addition on other properties such as hardness, index, and band gap less pronounced. A hardness increase of about 1 GPa is possible with some decrease in refractive index and increase in optical band gap.









TABLE 4







Measured Properties of Examples 3A-3H.



















Optical











Band



Stress
thickness
Gap


E
H


Example
(MPa)
(Å)
(eV)
n632
k632
(GPa)
(GPa)
E/H
H/E



















3A
−272.1
21922
5.0534
1.9386
0
175
17.6
9.94
0.10


3B
−819.4
21690
5.03
1.9304
0
185
18.5
10
0.10


3C
−1018
22075
5.0298
1.9129
0
180
18.4
9.78
0.10


3D
−900.5
22733
5.2108
1.882
0
182
18.8
9.68
0.10


3E
−450.5
22091
5.0531
1.9243
0
178
17.7
10.06
0.10


3F
−696.4
22486
5.0517
1.9035
0
184
18.4
10
0.10


3G
−876.9
22945
5.7253
1.8738
0
172
17.3
9.94
0.10


3H
−763.8
24697
5.1758
1.7911
0
145
15
9.67
0.10









Example 4

In Examples 4A-4H, single layers having a thickness of about 2000 nm and a composition of SiNx having near peak hardness (as illustrated in the above examples) were each formed on separate substrates using an P5000 parallel plate CVD supplied by Applied Materials, Inc. at a substrate temperature of about 400° C. to illustrate the impact of a higher substrate temperature and lower ionization on the layer properties. The deposition process conditions used are shown in Table 5. As shown in Table 5, deposition gases silane, ammonia, hydrogen and nitrogen were utilized, with flow rates in sccm. The pressure was varied from 2 to about 6 torr, as shown in Table 5. The deposition time (in seconds), RF power (in Watts) supplied and electrode gap (mils) between the plates is also specified in Table 5.









TABLE 5







Examples 4A-4H deposition conditions.















Exam-





Power




ple
SiH4
NH3
H2
N2
Pressure
(RF)
Gap
Time


















4A
24
48
480
2713
6
800
400
952.2


4B
8
64
480
2660
2
800
800
3081.2


4C
8
40
480
2702
4
600
600
3013


4D
24
48
480
2710
2
400
400
1418.6


4E
40
160
480
2410
4.9
625
600
530


4F
40
40
480
2410
4.9
625
600
530


4G
60
0
480
2410
4.9
625
600
530


4H
40
480
480
2410
4.9
625
600
530









Table 6 shows the measured thickness, optical band gap, refractive index n and k values at a wavelength of about 632 nm, Young's modulus (E) and hardness (H) values of the layers of Examples 4A-4H and of Examples 2A-1 through 2A-9 described in Example 2. Layers formed using the parallel plate PECVD at high substrate temperature (Examples 4A-4H) show a similar range of hardness/modulus and refractive index as the layers formed using ICP CVD at lower substrate temperature (150° C., Examples 2A-1 through 2A-9); however, the layers of Examples 4A-4H exhibited a slightly larger band gap than the layers of Examples 2A-1 through 2A-9.









TABLE 6







Measured Properties of Examples 4A-H and Examples 2A-1 through 2A-9.



















Optical











Band



Stress
thickness
Gap


E
H


Example
(MPa)
(Å)
(eV)
n632
k632
(GPa)
(GPa)
E/H
H/E



















4A
16.18
24045
5.346
1.895
0
172
17.3
9.94
0.10


4B
425.4
21504
5.349
1.852
0
195
19
10.26
0.10


4C
−643.6
25370
5.138
1.794
0
182
18.5
9.84
0.10


4D
−915.5
18031
5.255
1.859
0
211
21.2
9.95
0.10


4E
−636.4
19175
5.361
1.857
0
160
15.9
10.06
0.10


4F
−1171
14277
5.276
1.892
0
174
18.4
9.46
0.11


4G
−1577
12202
4.915
2.011
0
210
20
10.5
0.10


4H
−564.7
19631
5.423
1.83
0
156
15.8
9.87
0.10


2A-1
−886.5
20756
3.859
1.9859
0
175
17.2
10.17
0.10


2A-2
−668.6
21370
4.5979
1.9661
0
179
18.5
9.68
0.10


2A-3
−272.1
21922
5.0534
1.9386
0
175
17.6
9.94
0.10


2A-4
−46.85
23376
5.2124
1.9029
0
188
17.9
10.50
0.10


2A-5
−122.4
22762
2.2687
1.8827
0
172
15.9
10.82
0.09


2A-6
−524.4
21560
2.8816
2.17
0
128
13.3
9.62
0.10


2A-7
−377
23194
2.603
2.3548
0
108
10.9
9.91
0.10


2A-8
−79.2
22709
5.2847
1.8057
0
140
11.4
12.28
0.08


2A-9
−74.8
21096
5.3957
1.7814
0
134
10.8
12.41
0.08









Example 4E had a hydrogen content of about 22.6 atomic %. The hardness of the layer of Example 4E, as disposed on the substrate, was measured by the Berkovich Indenter Test and was about 18.3 GPa. The layer of Example 4E had a thickness of about 453 nanometers. Comparative Example 41 included a three sub-layer structure disposed on the same substrate as Example 4E. The three sub-layer structure of Comparative Example 41 included a 113 nanometer-thick Al2O3 sub-layer disposed on the substrate, a 2-micrometer thick aluminum oxynitride sub-layer disposed on the Al2O3 layer, and a 32 nanometer-thick SiO2 sub-layer disposed on the aluminum oxynitride layer. All of the sub-layers of Comparative Example 41 were formed using a sputtering process. The surface of each of Example 4E and Comparative Example 41 was indented with a Vickers indenter with a 200 gram load, a 500 gram load, a 1000 gram load and a 2000 gram load, to determine the Vickers indentation fracture threshold. Five samples each of Example 4E and Comparative Example 41 were tested at each load (i.e., a total of 20 samples each were tested). The number of samples of Example 4E that exhibited cracking are shown in Table 7. The Vickers indentation fracture threshold is reached when more than half of the samples exhibit cracking. As shown in Table 7, Example 4E did not reach the threshold at a load of 2000 g. The more than half of the samples of Example 41 exhibited cracking at a load of 100 g.









TABLE 7







Vickers indentation fracture results for Example 4E.










Vickers indentation load (grams)














Example
200
500
1000
2000







4E
0 of 5
0 of 5
0 of 5
1 of 5










Optical micrographs (at 200× magnification) of Example 4E and Comparative Example 41, after the 200 gram load indent are shown in FIG. 15. Optical micrographs (at 200× magnification) of Example 4E and Comparative Example 41, after the 1000 gram load indent are shown in FIG. 16. In FIGS. 15 and 16, the scale shown in each micrograph is 200 micrometers in length.


As shown in FIGS. 15 and 16, Comparative Example 41 exhibited cracking at the corners of the indentation; while Example 4E was relatively free of such cracking, indicating that Example 4E exhibited greater fracture resistance with load than Comparative Example 41. In addition, Comparative Example 41 exhibited such cracks at a lower load than Example 4E.


Example 5

Modeled Example 5 includes a layer having a composition of SiOxNyCz exhibiting a maximum hardness of about 19 GPa or greater, a measured by a Berkovich Indenter Test, an optical band gap of greater than about 4.5 eV, an absorption (k) at a wavelength of about 400 nm of less than about 3−4. The layer included a nitrogen content of greater than about 30 atomic %, a combined amount of silicon and aluminum of greater than about 40 atomic %, hydrogen content in the range from about 1 atomic % to about 25 atomic %, an oxygen content in the range from about 0 atomic % to about 7.5 atomic % and a carbon content in the range from about 0 atomic % to about 10 atomic %. The layer of Modeled Example 5 may optionally include fluorine and/or boron.


Example 6

In Examples 6A-6F, single layers having a thickness in the range from about 20,000 Angstroms (2000 nm) to about 30,000 Angstroms (3000 nm) and a composition of SiOxNyCz were each formed on separate substrates using an P5000 parallel plate CVD supplied by Applied Materials, Inc. at a substrate temperature of about 400° C. The deposition process conditions used are shown in Table 8. As shown in Table 8, deposition gases silane and nitrogen were utilized, with the flow rates of silane (in sccm) shown. The flow rate of nitrogen was held constant at 2000 sccm. The pressure was constant at about 4.5 torr and the RF power was also held constant at about 625 watts. The deposition time (in seconds), RF power (in Watts) supplied and electrode gap (mils) between the plates is also specified in Table 8. Table 8 also shows the band gap (eV), the refractive index (RI) at a wavelength of 632 nm, absorption coefficient (k) at a wavelength of 632 nm, Young's modulus E (GPa) and hardness H (GPa).









TABLE 8







Examples 6A-6F deposition conditions and measured properties.




















Gap

Thickness
Gap








Ex.
SiH4
(mils)
Time
(Å)
(eV)
RI
k
E
H
E/H
H/E





















6A
45
210
566
24465
2.62
2.142
0.003
146
15
9.733
0.103


6B
30
210
756
20801
3.49
2.052
0.000
168
17
9.882
0.101


6C
60
450
967
24169
5.49
1.9368
0.000
210
21
10.000
0.100


6D
75
600
1407
29768
5.24
1.9093
0.000
190
18
10.556
0.095


4E
75
450
777
24270
3.43
2.0055
0.000
180
18
10.000
0.100


6F
45
600
2478
26838
5.47
1.8786
0.000
157
15
10.467
0.096









The hardness values for Examples 6A-6F were plotted against the refractive index, in FIG. 17. In FIG. 17, the hardness values and refractive index values of Examples 2A-1 through 2A-9 (which were formed using a Plasma-Therm Versaline HDP tool and a substrate temperature of about 150° C.) were also plotted to compare the effect of substrate temperature. As shown in Table 8, Examples 6C and 6D exhibited the greatest hardness values (i.e., 21 GPa and 18 GPa, respectively), while also exhibiting the greatest band gap values (i.e., 5.49 eV and 5.24 eV, respectively). Without being bound by theory, it is believed that highest hardness occurs at maximum transparency, as higher hardness maximizes Si—N bonding.


Example 7

Example 7 included an article with a substrate having a major surface and coating structure disposed on the major surface. The substrate utilized in Example 7 included a glass substrate having a nominal composition of 58 mol % SiO2, 16.5 mol % Al2O3, 16.7 mol % Na2O, 3 mol % MgO, 6.5 mol % P2O5 and 0.05 mol % SnO2. The substrate had a thickness of 1 mm and included a coated substrate having the coating structure shown in Table 9.









TABLE 9







Coating structure of Example 7.










Material




Glass
Physical thickness (nm)














SiNx
7.7



SiO2
44.1



SiNx
22.8



SiO2
26.4



SiNx
38.4



SiO2
8.5



SiNx
2000



SiO2
19.2










The hardness and modulus of article of Example 7 was evaluated using the Berkovich Indenter Hardness Test. The article exhibited a hardness of 19.2 GPa and a modulus of 196 GPa. The roughness of the coated surface of the article was also measured and exhibited Rq of 3.09 nm and an Ra of 2.47 nm. The optical properties of the bare glass substrate and the coated article were measured, as shown in FIG. 18. As shown in FIG. 18, the transmittance and reflectance of the article approaches the transmittance and reflectance, respectively, of the bare glass substrate; however the article exhibits high hardness. The single-surface reflected color values of the article measured at various viewing angles at the coated surface using a D65 illuminant are shown in Table 10.









TABLE 10







Reflected color values of Example 7.









Incident illumination angle












6 degrees
20 degrees
40 degrees
60 degrees


Reference
s + p pol avg
s + p pol avg
s + p pol avg
s + p pol avg














x
0.3155
0.3156
0.3147
0.3139


y
0.3326
0.3327
0.3318
0.3310


L*
36.72
36.83
38.21
45.58


a*
0.04
0.04
0.03
0.03


b*
0.44
0.46
0.22
0.01









Example 8

Example 8 included an article with the same substrate as Example 7, having a major surface, and coating structure disposed on the major surface. The substrate included a coated substrate having the coating structure shown in Table 11.









TABLE 11







Coating structure of Example 8.










Material




Glass
Physical thickness (nm)














SiNx
16.3



SiO2
40.1



SiNx
116.2



SiO2
25.6



SiNx
20.6



SiO2
73.1



SiNx
24.9



SiO2
25.2



SiNx
82.8



SiO2
83.1










The hardness and modulus of article of Example 8 was evaluated using the Berkovich Indenter Hardness Test. The article exhibited a hardness of 11.4 GPa and a modulus of 99 GPa. The roughness of the coated surface of the article was measured and exhibited Rq of 1.65 nm and an Ra of 1.31 nm. The optical properties of the bare glass substrate and the coated article were measured, as shown in FIG. 19. As shown in FIG. 19, the transmittance and reflectance of the article was even improved over the transmittance and reflectance, respectively, of the bare glass substrate. The single-surface reflected color values of the article measured at various viewing angles at the coated surface using a D65 illuminant are shown in Table 12.









TABLE 12







Reflected color values of Example 8.









Incident illumination angle












6 degrees
20 degrees
40 degrees
60 degrees


Reference
s + p pol avg
s + p pol avg
s + p pol avg
s + p pol avg














x
0.3175
0.3178
0.3098
0.3067


y
0.2674
0.2808
0.3598
0.3513


L*
9.41
9.81
12.5
25.99


a*
8.53
6.76
−3.88
−4.91


b*
−5.73
−4.46
2.48
2.32









Example 9

Example 9 included an article with the same substrate as Example 7, having a major surface, and coating structure disposed on the major surface. The substrate included a coated substrate having the coating structure shown in Table 13.









TABLE 13







Coating structure of Example 9.










Material




Glass
Physical thickness (nm)














SiNx
7.7



SiO2
44.1



SiNx
22.8



SiO2
26.4



SiNx
38.4



SiO2
8.5



SiNx
2000



SIO2
17.2



SiNx
52.7



SiO2
22.1



SiNx
154.8



SiO2
83.2










The hardness and modulus of article of Example 9 was evaluated using the Berkovich Indenter Hardness Test. The article exhibited a hardness of 15.8 GPa and a modulus of 140 GPa. The roughness of the coated surface of the article was also measured and exhibited Rq of 3.31 nm and an Ra of 2.66 nm. The optical properties of the bare glass substrate and the coated article were, as shown in FIG. 20. As shown in FIG. 20, the transmittance and reflectance of the article was even improved over the transmittance and reflectance, respectively, of the bare glass substrate The single-surface reflected color values of the article measured at various viewing angles at the coated surface using a D65 illuminant are shown in Table 14.









TABLE 14







Reflected color values of Example 9.










Incident illumination angle













6 degrees
20 degrees
40 degrees
60 degrees


Reference
s + p pol avg
s + p pol avg
s + p pol avg
s + p pol avg














x
0.3306
0.3348
0.3379
0.3242


y
0.3095
0.3228
0.3585
0.3479


L*
12.05
12.67
16.5
30.77


a*
4.90
3.77
−0.28
−1.15


b*
−1.31
0.19
4.25
3.41









Example 10

Example 10 included an article with the same substrate as Example 7, having a major surface, and coating structure disposed on the major surface. The substrate included a coated substrate having the coating structure shown in Table 15.









TABLE 15







Coating structure of Example 10.










Material




Glass
Physical thickness (nm)














SiNx
9.2



SiO2
57.05



SiNx
27.89



SiO2
33.12



SiNx
51.62



SiO2
10



SiNx
2000



SiO2
10



SiNx
64.58



SiO2
13.18



SiNx
90.15



SiO2
10



SiNx
67.82



SiO2
17.88



SiNx
167.3



SiO2
80.44










The hardness and modulus of article of Example 10 was evaluated using the Berkovich Indenter Hardness Test. The article exhibited a hardness of 16.6 GPa and a modulus of 151 GPa. The roughness of the coated surface of the article was measured and exhibited Rq of 3.65 nm and an Ra of 2.91 nm. The optical properties of the bare glass substrate and the coated article were measured, as shown in FIG. 21. As shown in FIG. 21, the transmittance and reflectance of the article is comparable with or even improved over the transmittance and reflectance, respectively, of the bare glass substrate. The single-surface reflected color values of the article measured at various viewing angles at the coated surface using a D65 illuminant are shown in Table 16.









TABLE 16







Reflected color values of Example 10.









Incident illumination angle












6 degrees
20 degrees
40 degrees
60 degrees


Reference
s + p pol avg
s + p pol avg
s + p pol avg
s + p pol avg














x
0.3299
0.3272
0.3178
0.3141


y
0.3451
0.3414
0.3367
0.3359


L*
18.57
18.96
21.77
34.06


a*
0.41
0.54
−0.24
−0.98


b*
2.54
1.98
0.96
0.85









The microstructure of the coating structure of Example 10 was evaluated using TEM. As shown in FIGS. 22A-22E, the layers were not completely dense and some pores were visible.


The composition of the coating structure as a function of thickness was evaluated using EDS, as shown in FIGS. 23-25. FIG. 23 shows the entire thickness of the coating structure, FIG. 24 shows an enlarged view of the first 600 nm of the coating structure (from the glass) and FIG. 25 shows an enlarged view of the first 400 nm of the coating structure (from the glass). As shown more clearly in FIG. 24 and FIG. 25, the amount of Si is relatively constant along the thickness 0 nm to 600 nm. The amount of nitrogen and oxygen alternates with the different layers. For example, the first 100 nm have about 70-80 atomic % oxygen, with almost no nitrogen. Along a depth from 100 nm to about 250 nm, the amount of nitrogen is about 50-70 atomic % while the amount of oxygen is less than 10 atomic % along the same depth. The nitrogen and oxygen levels alternate in this manner as the layer compositions vary.


It will be apparent to those skilled in the art that various modifications and variations can be made without departing from the spirit or scope of the invention.

Claims
  • 1. A method of forming a composition comprising: introducing a source gas into a chamber; andforming the composition by chemical vapor deposition on a substrate,wherein the composition exhibits an optical band gap of about 3.5 eV or greater, a thickness, and a maximum hardness of about 17 GPa or greater, as measured by a Berkovich Indenter Test along an indentation depth of about 50 nm or greater.
  • 2. The method of claim 1, wherein the source gas comprises at least one of a silicon source gas, aluminum source gas and a nitrogen source gas.
  • 3. The method of claim 2, wherein the silicon source gas comprises silane.
  • 4. The method of claim 2, wherein the nitrogen source gas comprises at least one of nitrogen, nitrous oxide, and ammonia.
  • 5. The method of claim 1, further comprising: introducing at least one of a hydrogen source gas, oxygen gas, a carbon source gas, a boron source gas, and a fluorine source gas into the chamber.
  • 6. The method of claim 5, wherein the hydrogen source gas comprises silane and hydrogen.
  • 7. The method of claim 5, wherein the carbon source gas comprises at least one of carbon monoxide, carbon dioxide, acetylene, butane, and methane.
  • 8. The method of claim 5, wherein the fluorine source gas comprises at least one of silicon tetrafluoride, and a fluorocarbon.
  • 9. The method of claim 1, wherein the composition is formed at a temperature of about 400° C. or less.
  • 10. The method of claim 1, further comprising: selectively etching at least one of a portion of the composition and the chamber when forming the composition.
  • 11. The method of claim 1, further comprising: introducing a boron source gas into the chamber.
  • 12. A method of forming a composition comprising: introducing a source gas into a chamber; andforming the composition by chemical vapor deposition on a substrate,wherein the composition exhibits an optical band gap of about 3.5 eV or greater, a thickness, and a maximum hardness of about 17 GPa or greater, as measured by a Berkovich Indenter Test along an indentation depth of about 50 nm or greater, andwherein the composition comprises: (i) silicon, aluminum or a combination thereof,(ii) hydrogen, and(iii) at least one of oxygen, nitrogen, carbon, boron, and fluorine.
  • 13. The method of claim 12, wherein the source gas comprises at least one of a silicon source gas, aluminum source gas and a nitrogen source gas.
  • 14. The method of claim 13, wherein the silicon source gas comprises silane.
  • 15. The method of claim 13, wherein the nitrogen source gas comprises at least one of nitrogen, nitrous oxide, and ammonia.
  • 16. The method of claim 12, further comprising: introducing at least one of a hydrogen source gas, oxygen gas, a carbon source gas, a boron source gas, and a fluorine source gas into the chamber.
  • 17. The method of claim 16, wherein the hydrogen source gas comprises silane and hydrogen.
  • 18. The method of claim 16, wherein the carbon source gas comprises at least one of carbon monoxide, carbon dioxide, acetylene, butane, and methane.
  • 19. The method of claim 16, wherein the fluorine source gas comprises at least one of silicon tetrafluoride, and a fluorocarbon.
  • 20. The method of claim 12, wherein the composition is formed at a temperature of about 400° C or less.
CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application and claims the benefit of priority under 35 U.S.C. § 120 of U.S. patent application Ser. No. 15/696,559, filed Sep. 6, 2017, now U.S. Pat. No. 10,837,103, which in turn is a divisional application and claims the benefit of priority under 35 U.S.C. § 120 of U.S. patent application Ser. No. 14/812,562, filed on Jul. 29, 2015, now U.S. Pat. No. 9,790,593, which in turn, claims the benefit of priority under 35 U.S.C. § 119 of U.S. Provisional Application Ser. No. 62/120,466 filed on Feb. 25, 2015, U.S. Provisional Application Ser. No. 62/068,853 filed on Oct. 27, 2014, and U.S. Provisional Application Ser. No. 62/032,073 filed on Aug. 1, 2014, the contents of each of which are relied upon and incorporated herein by reference in their entireties.

US Referenced Citations (375)
Number Name Date Kind
3922068 Uetsuki Nov 1975 A
3934961 Itoh et al. Jan 1976 A
3989350 Cohen et al. Nov 1976 A
4033667 Fleming Jul 1977 A
4137365 Wydeven et al. Jan 1979 A
4298366 Dabby et al. Nov 1981 A
4310595 Beall et al. Jan 1982 A
4423925 Dabby et al. Jan 1984 A
4495684 Sander et al. Jan 1985 A
4519966 Aldinger et al. May 1985 A
4537814 Itoh et al. Aug 1985 A
4568140 van der Werf et al. Feb 1986 A
4571519 Kawabata et al. Feb 1986 A
4705356 Berning et al. Nov 1987 A
4826734 Jackson et al. May 1989 A
4851095 Scobey et al. Jul 1989 A
4896928 Perilloux et al. Jan 1990 A
4995684 Tustison et al. Feb 1991 A
5071206 Hood et al. Dec 1991 A
5138219 Krisl et al. Aug 1992 A
5178911 Gordon et al. Jan 1993 A
5234769 Shevlin Aug 1993 A
5268217 Kimock et al. Dec 1993 A
5300951 Yamazaki Apr 1994 A
5332888 Tausch et al. Jul 1994 A
5390274 Toyoda et al. Feb 1995 A
5393574 Sulzbach Feb 1995 A
5478634 Setoyama et al. Dec 1995 A
5503912 Setoyama et al. Apr 1996 A
5506038 Knapp et al. Apr 1996 A
5508092 Kimock et al. Apr 1996 A
5549953 Li Aug 1996 A
5567363 Jung et al. Oct 1996 A
5597622 Zoller Jan 1997 A
5635245 Kimock et al. Jun 1997 A
5637353 Kimock et al. Jun 1997 A
5643638 Otto et al. Jul 1997 A
5718773 Shiozaki Feb 1998 A
5719705 Machol Feb 1998 A
5766783 Utsumi et al. Jun 1998 A
5772862 Ando et al. Jun 1998 A
5773148 Charrue et al. Jun 1998 A
5846650 Ko et al. Dec 1998 A
5935716 McCurdy et al. Aug 1999 A
5938898 Ando et al. Aug 1999 A
6045894 Jonza et al. Apr 2000 A
6074730 Laird et al. Jun 2000 A
6077569 Knapp et al. Jun 2000 A
6088166 Lee Jul 2000 A
6114043 Joret Sep 2000 A
6129980 Tsukada et al. Oct 2000 A
6132650 Nakamura Oct 2000 A
6165598 Nelson Dec 2000 A
6166125 Sugiyama et al. Dec 2000 A
6172812 Haaland et al. Jan 2001 B1
6174599 Boire et al. Jan 2001 B1
6217272 Felsenthal et al. Apr 2001 B1
6238781 Anderson et al. May 2001 B1
6250758 Yoshihara et al. Jun 2001 B1
6267915 Park et al. Jul 2001 B1
6303225 Veerasamy Oct 2001 B1
6337771 Chu et al. Jan 2002 B1
6344288 Oyama et al. Feb 2002 B1
6355334 Rondeau et al. Mar 2002 B1
6355344 Mamish et al. Mar 2002 B1
6391400 Russell et al. May 2002 B1
6395333 Veerasamy May 2002 B2
6416872 Maschwitz Jul 2002 B1
6495251 Arbab et al. Dec 2002 B1
6503557 Joret Jan 2003 B1
6524714 Neuman et al. Feb 2003 B1
6535333 Piepel et al. Mar 2003 B1
6570709 Katayama et al. May 2003 B2
6572990 Oyama et al. Jun 2003 B1
6580512 Hussey et al. Jun 2003 B1
6583935 Saif et al. Jun 2003 B1
6596368 Liebig et al. Jul 2003 B1
6605358 Stachowiak Aug 2003 B1
6652974 Krisko Nov 2003 B1
6707610 Woodard et al. Mar 2004 B1
6730352 Stachowiak May 2004 B2
6746775 Boire et al. Jun 2004 B1
6783253 Thomsen et al. Aug 2004 B2
6785468 Takasaki et al. Aug 2004 B2
6813096 Ohta Nov 2004 B2
6838179 Legrand Jan 2005 B1
6875468 Kunz et al. Apr 2005 B2
6908480 Jayaraman Jun 2005 B2
6924037 Joret et al. Aug 2005 B1
6950236 Hokazono et al. Sep 2005 B2
6986857 Klemm Jan 2006 B2
6998177 Krzyzak et al. Feb 2006 B2
7005188 Anderson et al. Feb 2006 B2
7018727 Dzick Mar 2006 B2
7055954 Marechal Jun 2006 B2
7156533 Hoeing Jan 2007 B2
7166360 Coustet et al. Jan 2007 B2
7189456 King Mar 2007 B2
7229684 Enniss et al. Jun 2007 B2
7332213 Mimura et al. Feb 2008 B2
7351447 Nishida et al. Apr 2008 B2
7378146 Hedrick et al. May 2008 B1
7381469 Moelle et al. Jun 2008 B2
7405005 Watanabe Jul 2008 B2
7426328 Zhou et al. Sep 2008 B2
7498058 Harris et al. Mar 2009 B2
7521123 Hattori et al. Apr 2009 B2
7541102 Klippe et al. Jun 2009 B2
7569269 Takada et al. Aug 2009 B2
7643719 Zhou et al. Jan 2010 B1
7655298 Thies et al. Feb 2010 B2
7724241 Fukui et al. May 2010 B2
7736728 Loboda et al. Jun 2010 B2
7736824 Yoshikawa et al. Jun 2010 B2
7910215 Reymond et al. Mar 2011 B2
7926939 Kato et al. Apr 2011 B2
7978402 Sweeney et al. Jul 2011 B2
8062749 Shelestak et al. Nov 2011 B2
8067094 Benson et al. Nov 2011 B2
8088502 Martin et al. Jan 2012 B2
8118896 Can et al. Feb 2012 B2
8187671 Sol May 2012 B2
8236433 Chiu et al. Aug 2012 B2
8273801 Baikerikar et al. Sep 2012 B2
8304078 Varshneya Nov 2012 B2
8312739 Lee et al. Nov 2012 B2
8360574 Ishak et al. Jan 2013 B2
8383214 Schaepkens et al. Feb 2013 B2
8400592 Hirakata et al. Mar 2013 B2
8409716 Schultz et al. Apr 2013 B2
8425035 von Blanckenhagen Apr 2013 B2
8432611 Wach Apr 2013 B1
8445112 Di Stefano May 2013 B2
8446673 Yoshihara May 2013 B2
8460804 Henn et al. Jun 2013 B2
8508703 Lee et al. Aug 2013 B2
8561429 Allan et al. Oct 2013 B2
8679631 Murata Mar 2014 B2
8691351 Asakura et al. Apr 2014 B2
8746880 Fukagawa et al. Jun 2014 B2
8753744 Borrelli et al. Jun 2014 B2
8784933 Krzyak et al. Jul 2014 B2
8840257 Kawagishi et al. Sep 2014 B2
8842365 Koike et al. Sep 2014 B2
8854623 Fontaine et al. Oct 2014 B2
9023457 Carrilero et al. May 2015 B2
9041885 Weber et al. May 2015 B2
9042019 Su et al. May 2015 B2
9079802 Bellman et al. Jul 2015 B2
9110230 Koch, III et al. Aug 2015 B2
9249049 Fujii Feb 2016 B2
9296648 Henn et al. Mar 2016 B2
9335444 Hart et al. May 2016 B2
9359261 Bellman et al. Jun 2016 B2
9366784 Bellman et al. Jun 2016 B2
9411180 Gollier et al. Aug 2016 B2
9573842 Gollier et al. Feb 2017 B2
9574262 Henn et al. Feb 2017 B2
9663400 O'Malley et al. May 2017 B2
9684097 Koch, III et al. Jun 2017 B2
9701579 Gollier et al. Jul 2017 B2
9726786 Hart et al. Aug 2017 B2
9790593 Adib et al. Oct 2017 B2
9957609 Lee et al. May 2018 B2
10416352 Hart et al. Sep 2019 B2
10444408 Bellman et al. Oct 2019 B2
10451773 Hart et al. Oct 2019 B2
20010002295 Anderson et al. May 2001 A1
20010016262 Toyoshima et al. Aug 2001 A1
20010017452 Bernard Aug 2001 A1
20010031365 Anderson et al. Oct 2001 A1
20020009593 Veerasamy Jan 2002 A1
20020017452 Zimmermann et al. Feb 2002 A1
20020051274 Kim et al. May 2002 A1
20020051294 Katayama et al. May 2002 A1
20020136908 Komatsu et al. Sep 2002 A1
20030019363 Grover et al. Jan 2003 A1
20030031879 Neuman et al. Feb 2003 A1
20030035044 Nakayama et al. Feb 2003 A1
20030116270 Hawa et al. Jun 2003 A1
20030179454 Thomsen et al. Sep 2003 A1
20030193636 Allen et al. Oct 2003 A1
20040004778 Liu et al. Jan 2004 A1
20040005482 Kobayashi Jan 2004 A1
20040065968 Klemm Apr 2004 A1
20040147185 Decroupet Jul 2004 A1
20040258947 Moelle et al. Dec 2004 A1
20050008863 Mimura et al. Jan 2005 A1
20050012569 Sasaki Jan 2005 A1
20050074591 Zagdoun Apr 2005 A1
20050084705 Klippe et al. Apr 2005 A1
20050123772 Coustet et al. Jun 2005 A1
20050196632 Maschwitz et al. Sep 2005 A1
20050233091 Kumar et al. Oct 2005 A1
20060008656 Veerasamy Jan 2006 A1
20060017707 Fukui et al. Jan 2006 A1
20060019119 Spitsberg et al. Jan 2006 A1
20060093833 Meyer et al. May 2006 A1
20060115651 Merfeld et al. Jun 2006 A1
20060134436 Maschwitz Jun 2006 A1
20060139783 Decroupet Jun 2006 A1
20060154044 Yamada et al. Jul 2006 A1
20060165963 Fleury et al. Jul 2006 A1
20060197096 Kerdiles et al. Sep 2006 A1
20060222863 Nadaud et al. Oct 2006 A1
20060240266 Schicht et al. Oct 2006 A1
20070018671 Steck, Jr. Jan 2007 A1
20070018871 Riley Jan 2007 A1
20070030569 Lu et al. Feb 2007 A1
20070097509 Nevitt et al. May 2007 A1
20070128528 Hess et al. Jun 2007 A1
20070146887 Ikeda et al. Jun 2007 A1
20070188871 Fleury et al. Aug 2007 A1
20070237918 Jonza et al. Oct 2007 A1
20070247567 Sato et al. Oct 2007 A1
20070285776 Nakamura et al. Dec 2007 A1
20080024867 Kawashima et al. Jan 2008 A1
20080032157 Koekert et al. Feb 2008 A1
20080239488 Asakura et al. Oct 2008 A1
20090017314 Nadaud et al. Jan 2009 A1
20090040440 Park Feb 2009 A1
20090052041 Watanabe et al. Feb 2009 A1
20090086778 Kameyama et al. Apr 2009 A1
20090086783 Kameyama et al. Apr 2009 A1
20090104385 Reymond Apr 2009 A1
20090109537 Bright et al. Apr 2009 A1
20090141357 Kamura et al. Jun 2009 A1
20090155490 Bicker et al. Jun 2009 A1
20090195865 Kleideiter et al. Aug 2009 A1
20090197048 Amin et al. Aug 2009 A1
20090217968 Joshi et al. Sep 2009 A1
20090223437 Ballard Sep 2009 A1
20090297877 Chang et al. Dec 2009 A1
20090298669 Akiba et al. Dec 2009 A1
20090324844 Haoto et al. Dec 2009 A1
20100009154 Allan et al. Jan 2010 A1
20100027383 Suzuki et al. Feb 2010 A1
20100028607 Lee et al. Feb 2010 A1
20100047521 Amin et al. Feb 2010 A1
20100060979 Harris et al. Mar 2010 A1
20100062245 Martin et al. Mar 2010 A1
20100119486 Sakamoto et al. May 2010 A1
20100127154 Kameyama May 2010 A1
20100177380 Nagahama et al. Jul 2010 A1
20100183857 Nouvelot et al. Jul 2010 A1
20100196685 Murata et al. Aug 2010 A1
20100215950 Schultz et al. Aug 2010 A1
20100247745 Rudmann et al. Sep 2010 A1
20100291353 Dejneka et al. Nov 2010 A1
20100304090 Henn et al. Dec 2010 A1
20100311868 Bekiarian et al. Dec 2010 A1
20100313875 Kennedy Dec 2010 A1
20100330350 Osada et al. Dec 2010 A1
20110033635 Nishimoto et al. Feb 2011 A1
20110033681 Adachi et al. Feb 2011 A1
20110043719 Thunhorst et al. Feb 2011 A1
20110114160 Murashige et al. May 2011 A1
20110120554 Chhajed et al. May 2011 A1
20110129287 Lecoutre Jun 2011 A1
20110151173 Ramadas et al. Jun 2011 A1
20110157703 Broadway et al. Jun 2011 A1
20110177241 Lee et al. Jul 2011 A1
20110235181 Hayashibe et al. Sep 2011 A1
20110262742 Takeuchi et al. Oct 2011 A1
20110262752 Bawendi et al. Oct 2011 A1
20110262754 Zehentmaier et al. Oct 2011 A1
20110290982 Boutami et al. Dec 2011 A1
20110293929 Maschwitz Dec 2011 A1
20120008217 Ishak et al. Jan 2012 A1
20120027968 Chang et al. Feb 2012 A1
20120040179 Dave Feb 2012 A1
20120052271 Gomez et al. Mar 2012 A1
20120099188 Akozbek et al. Apr 2012 A1
20120099323 Thompson Apr 2012 A1
20120107607 Takaki et al. May 2012 A1
20120135153 Osakabe et al. May 2012 A1
20120154921 Yoshida et al. Jun 2012 A1
20120196103 Murashige et al. Aug 2012 A1
20120212826 Henn et al. Aug 2012 A1
20120219792 Yamamoto et al. Aug 2012 A1
20120228641 Thoumazet et al. Sep 2012 A1
20120235399 Lochbihler Sep 2012 A1
20120247152 Ohara et al. Oct 2012 A1
20120250314 Maikowski et al. Oct 2012 A1
20120268809 Guo et al. Oct 2012 A1
20120281292 Baca et al. Nov 2012 A1
20120301676 Ushida et al. Nov 2012 A1
20120321898 Meinhardt et al. Dec 2012 A1
20120327568 Shedletsky et al. Dec 2012 A1
20130013574 Wu Jan 2013 A1
20130021669 Xi et al. Jan 2013 A1
20130022798 Fukawa et al. Jan 2013 A1
20130029118 Kishi et al. Jan 2013 A1
20130057950 Lin et al. Mar 2013 A1
20130059137 Klevesi et al. Mar 2013 A1
20130120842 Moens et al. May 2013 A1
20130128342 Mitarai et al. May 2013 A1
20130135741 Lee et al. May 2013 A1
20130135742 Fukagawa et al. May 2013 A1
20130135750 Walker et al. May 2013 A1
20130170044 Mont et al. Jul 2013 A1
20130176615 Uefuji et al. Jul 2013 A1
20130177751 Oh et al. Jul 2013 A1
20130183489 Cremer et al. Jul 2013 A1
20130187185 Deshazer et al. Jul 2013 A1
20130189184 Lub et al. Jul 2013 A1
20130209762 Damm et al. Aug 2013 A1
20130260115 Suzuki Oct 2013 A1
20130263784 Lee et al. Oct 2013 A1
20130271836 Fukaya Oct 2013 A1
20130322270 Ko Dec 2013 A1
20130334031 Lee et al. Dec 2013 A1
20140022630 Reymond et al. Jan 2014 A1
20140036175 Morishima et al. Feb 2014 A1
20140049827 Fujii et al. Feb 2014 A1
20140087101 Tixhon et al. Mar 2014 A1
20140090864 Paulson Apr 2014 A1
20140090974 Ballet Apr 2014 A1
20140091419 Hasegawa et al. Apr 2014 A1
20140093711 Paulson Apr 2014 A1
20140106141 Bellman et al. Apr 2014 A1
20140106146 Decker et al. Apr 2014 A1
20140106150 Decker et al. Apr 2014 A1
20140111859 Duraes et al. Apr 2014 A1
20140113083 Lee et al. Apr 2014 A1
20140113120 Thiel Apr 2014 A1
20140139978 Kwong May 2014 A1
20140170765 Ockenfuss Jun 2014 A1
20140186615 An et al. Jul 2014 A1
20140220327 Adib et al. Aug 2014 A1
20140226208 Vikor Aug 2014 A1
20140233104 Nagahama et al. Aug 2014 A1
20140233106 Vergoehl et al. Aug 2014 A1
20140247415 Kleptsyn Sep 2014 A1
20140255616 Paulson Sep 2014 A1
20140261615 Nair et al. Sep 2014 A1
20140295330 Pruneri et al. Oct 2014 A1
20140320806 Cohen-Tannoudji et al. Oct 2014 A1
20140334006 Adib et al. Nov 2014 A1
20140335330 Bellman et al. Nov 2014 A1
20140347722 Hevesi Nov 2014 A1
20140353618 Shim et al. Dec 2014 A1
20140362444 Paulson Dec 2014 A1
20140368029 Park Dec 2014 A1
20140370264 Ohara et al. Dec 2014 A1
20140376094 Bellman Dec 2014 A1
20140377522 Koch, III Dec 2014 A1
20150002809 Cohen-Tannoudji et al. Jan 2015 A1
20150037554 Gao et al. Feb 2015 A1
20150043058 Saito Feb 2015 A1
20150062695 Chu et al. Mar 2015 A1
20150062710 Grillmayer et al. Mar 2015 A1
20150079398 Amin et al. Mar 2015 A1
20150083464 Zilbauer et al. Mar 2015 A1
20150116832 Kamiuto et al. Apr 2015 A1
20150212245 Ueda Jul 2015 A1
20150219798 Sonoda et al. Aug 2015 A1
20150260888 Yoshihara et al. Sep 2015 A1
20150284840 Henn et al. Oct 2015 A1
20150293284 Tatemura Oct 2015 A1
20150322270 Amin et al. Nov 2015 A1
20150323705 Hart et al. Nov 2015 A1
20150346403 Jidai et al. Dec 2015 A1
20150355382 Henn et al. Dec 2015 A1
20150376057 Koch et al. Dec 2015 A1
20160011348 Hirakoso et al. Jan 2016 A1
20160018576 Yamamoto et al. Jan 2016 A1
20160076135 Cheah et al. Mar 2016 A1
20160083835 Adib et al. Mar 2016 A1
20170075039 Hart et al. Mar 2017 A1
20170087144 Rowe et al. Mar 2017 A1
20170184762 Fujii et al. Jun 2017 A1
20170199307 Hart et al. Jul 2017 A1
20170369992 Adib et al. Dec 2017 A1
20190077352 Bhatia et al. Mar 2019 A1
Foreign Referenced Citations (177)
Number Date Country
2002341016 Feb 2003 AU
766773 Oct 2003 AU
2141536 Feb 1994 CA
1423682 Jun 2003 CN
1575970 Feb 2005 CN
1688904 Oct 2005 CN
1703631 Nov 2005 CN
101019043 Aug 2007 CN
101044266 Sep 2007 CN
100360449 Jan 2008 CN
101236264 Aug 2008 CN
101295030 Oct 2008 CN
101349769 Jan 2009 CN
101356455 Jan 2009 CN
101400619 Apr 2009 CN
101639663 Feb 2010 CN
101734867 Jun 2010 CN
101809512 Aug 2010 CN
101939266 Jan 2011 CN
102016962 Apr 2011 CN
102470637 May 2012 CN
102574736 Jul 2012 CN
102681042 Sep 2012 CN
102736136 Oct 2012 CN
202661651 Jan 2013 CN
102934010 Feb 2013 CN
102967947 Mar 2013 CN
103011618 Apr 2013 CN
103068764 Apr 2013 CN
103073196 May 2013 CN
103395247 Nov 2013 CN
103492173 Jan 2014 CN
103499852 Jan 2014 CN
103508678 Jan 2014 CN
103707578 Apr 2014 CN
103902122 Jul 2014 CN
104040016 Sep 2014 CN
104422971 Mar 2015 CN
104553126 Apr 2015 CN
105593705 May 2016 CN
107076874 Aug 2017 CN
107735697 Feb 2018 CN
108585479 Sep 2018 CN
102014104798 Oct 2015 DE
102015114877 Mar 2017 DE
566271 Oct 1993 EP
592986 Apr 1994 EP
1289898 Mar 2003 EP
1490715 Dec 2004 EP
2196870 Jun 2010 EP
2328818 Dec 2012 EP
2628818 Aug 2013 EP
2711744 Mar 2014 EP
1517585 Jul 1978 GB
63238260 Oct 1988 JP
04250834 Sep 1992 JP
07035267 Feb 1995 JP
09068602 Mar 1997 JP
10-000009 Jan 1998 JP
2974879 Nov 1999 JP
11311702 Nov 1999 JP
2000171601 Jun 2000 JP
2000171605 Jun 2000 JP
2000214302 Aug 2000 JP
2001-511539 Aug 2001 JP
2001303246 Oct 2001 JP
2002-116303 Apr 2002 JP
2002174810 Jun 2002 JP
2002-267835 Sep 2002 JP
2002267835 Sep 2002 JP
2003131011 May 2003 JP
2003236970 Aug 2003 JP
2003236970 Aug 2003 JP
2003285343 Oct 2003 JP
2004138662 May 2004 JP
2004-163549 Jun 2004 JP
2004163549 Jun 2004 JP
2005114649 Apr 2005 JP
2005219223 Aug 2005 JP
2005274527 Oct 2005 JP
2006-079067 Mar 2006 JP
2006-116754 May 2006 JP
2006208726 Aug 2006 JP
2007099557 Apr 2007 JP
2007156017 Jun 2007 JP
2007527328 Sep 2007 JP
2007271958 Oct 2007 JP
2008-032949 Feb 2008 JP
2008033348 Feb 2008 JP
2008-242425 Oct 2008 JP
2008-247732 Oct 2008 JP
2008242425 Oct 2008 JP
2009109850 May 2009 JP
2009116218 May 2009 JP
2009116219 May 2009 JP
2009116220 May 2009 JP
2009-529715 Aug 2009 JP
2009199022 Sep 2009 JP
2009204506 Sep 2009 JP
2009265601 Nov 2009 JP
04421142 Feb 2010 JP
2010202514 Sep 2010 JP
04612827 Jan 2011 JP
2011017782 Jan 2011 JP
2011057547 Mar 2011 JP
2011093728 May 2011 JP
04707656 Jun 2011 JP
2011133800 Jul 2011 JP
2011134464 Jul 2011 JP
2011-150821 Aug 2011 JP
04765069 Sep 2011 JP
04790396 Oct 2011 JP
2011-237789 Nov 2011 JP
2012171866 Sep 2012 JP
2012-203187 Oct 2012 JP
2012189760 Oct 2012 JP
2012230290 Nov 2012 JP
2013025318 Feb 2013 JP
2013097356 May 2013 JP
2013122516 Jun 2013 JP
2013142817 Jul 2013 JP
2013-224964 Oct 2013 JP
2013205634 Oct 2013 JP
2013252992 Dec 2013 JP
2014056215 Mar 2014 JP
2014194530 Oct 2014 JP
2015-058606 Mar 2015 JP
2015-506895 Mar 2015 JP
2015058605 Mar 2015 JP
2015-536892 Dec 2015 JP
2016-531330 Oct 2016 JP
2018-010275 Jan 2018 JP
10-2008-0102154 Nov 2008 KR
10-2011-0054057 May 2011 KR
1103041 Jan 2012 KR
1194257 Oct 2012 KR
2013031689 Mar 2013 KR
2014034172 Mar 2014 KR
I245919 Dec 2005 TW
200600824 Jan 2006 TW
201335090 Sep 2013 TW
201500757 Jan 2015 TW
201520585 Jun 2015 TW
1997013003 Apr 1997 WO
1998037254 Aug 1998 WO
0037384 Jun 2000 WO
0242834 May 2002 WO
0242843 May 2002 WO
2006066101 Jun 2006 WO
2006099765 Sep 2006 WO
2008108332 Sep 2008 WO
2009041528 Apr 2009 WO
2012043341 Apr 2012 WO
2012144499 Oct 2012 WO
2012157719 Nov 2012 WO
2013001023 Jan 2013 WO
2013082477 Jun 2013 WO
2013082488 Jun 2013 WO
2013088856 Jun 2013 WO
2013098641 Jul 2013 WO
2013160233 Oct 2013 WO
2014041257 Mar 2014 WO
2014055489 Apr 2014 WO
2014167293 Oct 2014 WO
2014182693 Nov 2014 WO
2014182639 Nov 2014 WO
2015000534 Jan 2015 WO
2015009377 Jan 2015 WO
2015031428 Mar 2015 WO
2015041257 Mar 2015 WO
2015070254 May 2015 WO
2015076914 May 2015 WO
2015085283 Jun 2015 WO
2015142837 Sep 2015 WO
2015175390 Nov 2015 WO
2015179739 Nov 2015 WO
2016118462 Jul 2016 WO
Non-Patent Literature Citations (122)
Entry
Chang et al. “Characteristics of Si—C—N films deposited by microwave plasma CVD on Si wafers with various buffer layer materials”, Diamond and Related Material, 2001, vol. 10, pp. 1910-1915. (Year: 2001).
.V. Afanasyev-Charkin et al. “Hard Si-N-C films with a tunable band gap produced by pulsed glow discharge deposition”, Surface & Coatings Technology, 1999, pp. 38-42. (Year: 1999).
Xu et al. “Chemical control of physical properties in silicon nitride films”, Applied Physics A: Materials Science & Processing, 2012, vol. III, pp. 867-876. (Year: 2012).
I.V. Afanasyev-Charkin et al. “Hard Si-N-C films with a tunable band gap produced by pulsed glow discharge deposition”, Surface & Coatings Technology, 1999, pp. 38-42. (Year: 1999).
IXu et al. “Chemical control of physical properties in silicon nitride films”, Applied Physics A: Materials Science & Processing, 2012, vol. III, pp. 867-876. (Year: 2012).
Chang et al. “Characteristics of Si-N-C films deposited by microwave plasma CVD on Si wafers with various buffer layer materials”, Diamond and Related Material, 2001, vol. 10, pp. 1910-1915 (Year: 2001).
English Translation of CN201580053885.4 Office Action dated Apr. 17, 2019; 8 Pages; Chinese Patent Office.
English Translation of KR1020167033789 dated Apr. 23, 2018; 4 Pages; Korean Patent Office.
European Patent Application No. 15767363.3 Office Action dated Feb. 9, 2018; 6 pages; European Patent Office.
CN201480037881.2 Office Action dated Mar. 24, 2017, China Patent Office.
CN201480061989.5 First Office Action dated Jan. 14, 2017, China Patent Office.
CN201480062322.7 Second Office Action dated May 2, 2017, China Patent Office.
CN201580037781.4 First Office Action dated Jul. 3, 2018, China Patent Office.
CN201580053885.4 First Office Action dated Aug. 27, 2018, China Patent Office.
JP2016512949 Office Action dated Apr. 17, 2018, Japan Patent Office.
JP2016512949 Office Action dated Jul. 24, 2018, Japan Patent Office.
JP2016542802 Office Action dated Aug. 7, 2018, Japan Patent Office.
JP2016559353 Office Action dated Aug. 3, 2018, Japan Patent Office.
PCT/US2014/055282 Search report.
PCT/US2014036873 Search Report/Written Opinion.
TW103131408 Search Report dated Oct. 19, 2016, Taiwan Patent Office.
TW104125128 Search Report and Office Action dated Sep. 13, 2018, Taiwan Patent Office.
U.S. Appl. No. 14/828,114.
Portinha et al., “Hard ZrO2/Al2O3 nanolamianted PVD coatings evaluated by nanoindentation”, Surface & Coatings Technology 200 (2005) 765-768.
Reinhold et al; “Plasma Nitriding of Aluminum Alloys.” Proceedings of the 1st International Automotive Heat Treating Conference. Jul. 13-15, 1998.
Ruddell et al; “The Effect of Deposition Parameters on the Properties of Yttria-Stabilzed Zirconia Thin Films”; Thin Solid Films, 445 (2003) p. 14-19.
Savage “Preparation and properties of hard crystalline materials for optical applications a review.” Journal of Crystal Growth 113 (1991) 698-715.
Schroter et al; “X-ray photoelectron diffraction on SiC and AlN epitaxial films: polytype structure and polarity.” Elsevier, Journal of Electron Spectroscopy and Related Phenomena. 114-116 (2001) 443-450.
Singh et al; “Structural and optical properties of RF magnetron sputtered aluminium nitride films without external substrate heating.” Elsevier, Applied Surface Sceince 257 (2011) 9568-9573.
Sixth Edition, Pearson Prentice Hall, New Jersey, 2005, pp. 404-418.
Smart and Moore; “Solid State Chemistry, an Introduction,” Chapman & Hall University and Professional Division, London, 1992, pp. 136-151.
Sonderby et al; “Deposition of Yttria-Stabilized Zirconia Thin Films by High Power Impulse Magnetron Sputtering and Pulsed Magnetron Sputtering” ; Surface & Coatings Technology; 240; (2014) pp. 1-6.
Southwell, “Coating design using very thin high- and low-index layers,” Applied Optics, vol. 24, Issue 4, pp. 457 (1985.
PCT/US2015/043161 Search Report dated Dec. 3, 2015.
Sun et al; “DLC protective layers for touch screen panels” ; National Research Center for Glass Processing and State Key Laboratory for Green Building Materials, China Academy of Building Materials; Beijing CN, SVC2013, Rhode Island Apr. 23-24, 2013.
Tsui, et al., “Effects of Adhesion on the Measurement of Thin Film Mechanical Properties by Nanoindentation.” Mat. Res. Soc. Symp. Proc. vol. 473 1997.
Urushidani et al; “Etalon-Type Optical Filters, Their Modules, Spectrometers, and Optical Devices.” Jpn. Kokai Tokkyo Koho, 2012.
Urushidani et al; “Optical Filters Including Optical Films Covered with Thickness-Controlled Dielectric Films, and Optical Filter Modules, Spectrometers and Optical Apparatus Containing Them.” 2012.
Wang et al. “Tribological and optical properties of crystalline and amorphous alumina thin films grown by low temperature reactive magnetron sputter-deposition” , Surface and coatings technology, pp. 146-147 (2001) p. 189-194.
Wang et al; “Roughness Improvement and Hardness Enhancement in Nanoscale Al/AlN Multilayered Thin Films.” Applied Physics Letters vol. 71, No. 14, 1951-1953, Oct. 6, 1997.
Wang et al; “Study of ALON and CRON films deposited by arc ion plating as diffusion barriers.” Jinshu Xuebao (2004), 40, 1, 83-87.
Wang et al; “Toward Hard Yet Tough Ceramic Coatings” ; Surface & Coatings Technology 258 (2014) pp. 1-16.
Watanabe et al; “Surface Oxidation of Aluminum Nitride Thin Films.” Surface Modification Technologies XIII, Edited by Sudarshan, Khor, Jeandin, ASM International, Materials Park, Ohio, 1999. pp. 209-215.
Wen et al. “The AlN layer thickness dependent coherent epitaxial growth, stress and hardness in NbN/AlN nanostructured multi-layer films.” Surface and Coatings Technology 235 (2013) 367-375.
Xi et al; “The Preparation and Optical properties of AlN Thin Films.” Diwen Wuli Xuebao (2012), 34)6), 467-470.
Yamamoto et al; “Manufacture of IR-Reflecting Bent Plate Glass.” Jpn. Kokai Tokkyo Koho, 1988.
Yamashita et al; “Preparation and Properties of AlON—SiAlON Composites.” Journal of the Ceramic Society of Japan 109, pp. 434-439, 2001.
Yan et al; “The Preparation and Properties of Y2O3/AlN Anti-Reflection Films on Chemical Vapor Deposition Diamond.” Elsevier, Thin Solid Films, 520, pp. 734-738, 2011.
Yang et al; “Preparation and Properties of AlN Thin Films by Pure Nitrogen Reactive Sputtering.” Rengong Jingti Xuebao, 39 (1), pp. 190-196, 2010.
Yang et al; “Preparation and Properties of C-Axis Preferred Orientation AlN Thin Films by Pure Nitrogen Reactive Sputtering.” Xianjiang Daxue Xuebao, Ziran Kexueban, 26 (4), pp. 444-449, 2009.
Yun et al.. “Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia.” Mat. Res. Soc. Symp. Proc., vol. 764, 2003.
Zabinski et al “Stoichiometry and characterization of aluminium oxynitride thin films grown by ion-beam assisted pulsed laser deposition.” Elsevier, Thin Solid Films, 516, pp. 6215-6219, 2008.
Zayats et al; “Optical Studies of AlN/n-Si(100) Films Obtained by the Method of High-Frequency Magnetron Sputtering.”
PCT Search report (PCT/US14/55281).
PCT Search report/Written Opinion from (PCT/US14/36872).
PCT Search report/Written Opinion (PCT/US14/36090).
Shackelford, “Introduction to Materials Science for Engineers,”Sixth Edition, Pearson Prentice Hall, New Jersey, 2005, pp. 404-418.
Pantano et al “Al2O3 Coating by Atomic Layer Deposition (ALD) on various glass substrates for Surface Strength Improvement”.
Gpi: http://generalplasma.com/products/large-area-pecvd/.
Corning, Corning Gorilla Glass for Large Cover Glass Applications, 2013, 3 Pgs.
Chinese First Office Action CN2014800378812 dated Aug. 3, 2016.
Chinese First Office Action CN20140038909.4 dated Aug. 3, 2016.
Afanasyev-Charkin et al; “Hard Si—N—C films with a tunable band gap produced by pulsed glow discharge deposition” ; Surface & Coatings Technology; 199 (2005) 38-42.
Aissa et al; “Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures.” Elsevier, Thin Solid Films, 550 (2014) 264-267.
Assouar et al; “Study of Acoustical and Optical Properties of AlN Films for SAW and BAW Devices: Correlation Between These Properties.” Integrated Ferroelectrics, 82: 45-54, 2006.
Baek et al; “Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition.” Elsevier, Thin Solid Films 515 (2007) 7096-7104.
Bitterlich et al; “Particle-reinforced SiAlONs for Cutting Tools.” Materials Science Forum vol. 554 (2007) pp. 129-134.
Boichot et al; “Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Incluence of the gas phase N/Al ratio and low temperature protective layer.” Elsevier, Surface & Coatings Technology 237 (2013) 118-125.
Borges et al; . “Optical Properties of AlNxOy Thin Films Deposited by DC Magnetron Sputtering.” Proceedings of SPIE, 2011.
Caceres and Prieto, “Mechanical properties of sputtered silicon notride thin films”, Journal of Applied Physics 94(12) 2003, pp. 7868-7873.
Caliendo et al; “Structural, optical, and acoustic characterization of high-quality AlN thick films sputtered on Al2O3(001) at temperature for GHz band electroacoustic devices applications.” Journal of Applied Physics 96, No. 5, 2610 (2004).
Carniero et al. “Hardness Evaluation of Nanolayered PVD Coatings Using Nanoindentation”, Rev. Adv. Mater. Sci., 2014 p. 83-90.
Chan et al; “Fracture Toughness Improvements of Dental Ceramic Through Use of Yttria-Stabilized Zirconia (YSZ) Thin-Film Coating”; Dental Materials, 29 (2013) pp. 881-887.
Chang et al; “Characteristics of Si—C—N films deposited by microwave plasma CVD on Si wafers with various buffer layer materials” Diamond and Related Materials; 10 (2001) 1910-1915.
Xu et al; “Chemical control of physical properties in silicon nitride films”; Appl Phys A (20163) 111: 867-876.
Chen et al; “Optical Reflectance of Bulk AlN Crystals and AlN Epitaxial Films.” AIP Conference Proceedings, 772, 297-298, 2005.
Chen et al; “Thickness-dependent structural transformation in the AlN film.” Elsevier, Acta Materialia 53 (2005) 5223-5227.
Chi et al; “Cracking in coating-substrate composites with multi-layered and FGM coatings.” Engineering Fracture Mechanics, vol. 70, 1227-1243, 2003.
Corbin, Aluminum Oxynitride Spinel (ALON): A Review, Jul. 1987. Journal of the European Ceramic Society vol. 5, Issue 3, 1989, pp. 143-154.
Corning, Corning Eagle XG AMLCD Glass Substrates Material Information, MIE 301, Issued Jan. 2006, 3 Pgs.
Corning, Corning EAGLE2000 Glass, Materials Information, Revised Aug. 2000, 5 Pgs.
Danylyuk, et al. “Optical and Electrical Properties of Al 1-x InxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy.” Mat. Res. Soc. Symp., vol. 639, 2001.
Easwarakhanthan et al; “Spectroellipsometric investigation of optical, morphological, and structural properties of reactively sputtered polycrystalline AlN films.” J. Vac. Sci. Technology A 28 (3), pp. 495-501, May/Jun. 2010.
English Translation of JP2016512997 First Office Action dated Jul. 5, 2016; 6 Pages; Japanese Patent Office.
Fischer-Cripps; “Critical Review of Analysis and Interpretation of Nanoindentation Test Data”; Surface & Coatings Technology 200 (2006) p. 4153-4165.
Gazda et al; “Formation of AlN films on Ti/TiN Arc-Layer Interface with Al-0.5% Cu Interconects evaluated by XPS and Energy-filtered-TEM.” Mat. Res. Soc. Symp. Proc. vol. 589, 365-370, 2001.
Godeker et al., “Antireflection coating for sapphire with consideratino of mechanical properties”, Surface & Coatings Technology, 241 (2014) 59-63.
Goldman et al., “Scale Up of Large ALON Windows” , Window and Dome Technologies and Materials XIII, edited by Randal W. Tustison, Brian J. Zelinski,Proc. of SPIE vol. 8708, 870804 (Jun. 4, 2013).
Hajakbari et al; “Optical Properties of Amorphous AlN Thin Films on Glass and Silicon Substrates Grown by Single Ion Beam Sputtering.” Jpn. J. Appl. Phys. 49, 095802 (2010.
Harding et al; “Cracking During Indentation and Its Use in the Measurement of Fracture Toughness” ; Mat. Res. Soc. Symp. Proc.; Vo.. 356, 1995, pp. 663-668.
Hay et al; “Continuous Stiffness Measurement During Instrumented Indentation Testing” ; Experimental Techniques; May/Jun. 2010; pp. 86-94.
Hirai et al; “Formation of Aluminum Nitride by Carbothermic Reduction of Alumina in a Flowing Nitrogen Atmosphere.” Nippon Kinzoku Gakkaishi (1989, 53 (10), 1035-40.
Hu et al; “Dynamic Fracturing of Strengthened Glass Under Biaxial Tensile Loading”; Journal of Non-Crystalline Solids; 405 (2014); pp. 153-158.
Huang et al; “Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films” ; Materials Science and Engineering A 435-436 (2006) 453-459.
Huang et al; “Effects of Substrate Temperature on Aluminum Nitride Films by Reactive Magnetron Sputtering.” Kiyou Jinshu, 35 (5), pp. 715-718, 2011.
Inkin et al; “Properties of aluminium nitride coating obtained by vacuum arc discharge method with plasma flow separation.” Elsevier, Diamond and Related Materials, 10 (2001) 1314-1316.
International Search Report and Written Opinion PCT/US2016/051488 dated Nov. 21, 2016.
Ishiguro et al “Solar Light Absorption Property of Sputtered Al-N Films with Enhanced Surface Roughness during Film Growth.” Jpn. J. Appl. Phys. vol. 41 (2002) pp. 292-300.
Kittel, “Introduction to Solid State Physics.” Seventh Edition, John Wiley & Sons, Inc., NY, 1996, pp. 611-627.
Krupitskaya et al; “Optical Characatization of AlN Films Grown by Plasma Source Molecular Beam Epitaxy.” Journal of Applied Physices 84, 2861-2865, 1998.
Li et al, “Low-temperature magnetron sputter deposition, hardness and electrical resistivity of amorphous and crystalline alumina thin films” Journal of Vacuum Science & Technology A 18, 2333 (2000).
Madocks et al Durable Neutral Color Anti-Reflective Coating for Mobile Displays; SVC Bulletin Fall 2014 3 pages.
Mania “Magnetron Sputtering for Deposition of Aluminum Nitride Thin Films.” Prace Komisji Nauk Ceramiczynych, 54, 429-433, 1997.
Martinet er al; “Deposition of SiO2 and TiO2 thin films by plasma enhanced chemical vapors deposition for antireflection coating”, J. Non-Crystalline Solids; 216 (1997) 77-82.
McCauley, et al, “AION: A brief history of its emergence and evolution.” Journal of the European Ceramic Society 29 (2009), 223-236.
Miao et al; “Optical Properties and Reactive Sputtering Conditions of AlN and AlSiN Thin Films for Magneto-Optical Applications.” Journal of Electronic Materials, vol. 26, No. 1, 1997.
Moghal et al., “Nanomechanical study of thin film nanocomposite and PVD thin films on polymer substrate for optical applications”, J. Phys. D: Appl. Phys. 46 (2013).
Moore, “Gradient Index Optics: A Review,” Applied Optics, vol. 19, No. 7, Apr. 1, 1980.
Oliver et al. “An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments”. J. Mater Res., vol. 7, No. 6, 1992, 1564-1583.
Oliver et al. “Measurement of Hardness and Elastic Modulus by Instrument Indentation: Advances in Understanding and Refinements to Methodology”. J. Mater. Res., vol. 19, No. 1, 2004, 3-20.
Park et al; “Atomic Layer Deposition of Yttria-Stabilized Zirconia Thin Films for Enhanced Reactivity and Stability of Solid Oxide Fuel Cells”; Energy; vol. 116; (2016); pp. 170-176.
PCT/US2015/030116 Search Report dated Jan. 12, 2016.
English Translation of JP2017505500 Office Action dated May 29, 2019, Japan Patent Office, 3 Pgs.
Liaoning Provincial Popular Science Writers Association, “High Technology Around Your Life”, Popular Science Press, p. 217, Oct. 1992 (English Translation Attached).
Chinese Patent Application No. 201580053885.4; English Translation of the Decision on Rejection dated Sep. 12, 2019; China Patent Office; 7 Pgs.
Corning, “Corning Gorilla Glass 5,” Product Info Sheet, 2 pgs. 2016. retrieved from: https://www.corning.com/microsites/csm/gorillaglass/PI_sheets/Corning%20Gorilla%2-Glass%205%20PI%20Sheet.pdf.
Tang et al. “Optical, structural, and mechanical properties of silicon oxyynitride films sputtering by pulsed magnetron sputtering,” Applied Optics 56(4) 2016, pp. C168-C174.
Invitation to Pay Additional Fees and Partial Search Report of the European International Searching Authority; PCT/US2019/058547; dated Feb. 19, 2020; 11 Pgs.
Fraunhofer IWS, Available online at <https://www.iws.fraunhofer.de/content/dam/iws/en/documents/publications/product_sheets/200-1a_large_en.pdf>, retrieved in 2020, 1 page.
International Search Report and Written Opinion of the International Searching Authority; PCT/US15/030116; dated Jan. 12, 2016; 11 Pages; European Patent Office.
Japanese Patent Application No. 2018-219122 Decision of Refusal dated Dec. 2, 2020; 12 Pages; (6 Pages of English Translation and 6 Pages of Original Document) Japanese Patent Office.
Taiwanese Patent Application No. 109104136 Office Action dated Dec. 4, 2020; 3 Pages; Taiwanese Patent Office.
Related Publications (1)
Number Date Country
20190292657 A1 Sep 2019 US
Provisional Applications (3)
Number Date Country
62120466 Feb 2015 US
62068853 Oct 2014 US
62032073 Aug 2014 US
Divisions (1)
Number Date Country
Parent 14812562 Jul 2015 US
Child 15696559 US
Continuations (1)
Number Date Country
Parent 15696559 Sep 2017 US
Child 16437690 US