Claims
- 1. A method of selecting a material for use as the expansive element in a thermoelastic design by deriving an indicator of the material's potential effectiveness for that use, said method including the step of calculating a dimensionless constant εγ for that material in accordance with the formula:
- 2. The method of claim 1 further including the step of normalizing the dimensionless constant relative to that of silicon to a value ε which is achieved by deriving the value εγ for the material of interest at the relevant temperature value and dividing this by the value of ε obtained for silicon at that same temperature.
- 3. The method of claim 1 further including determining mε where
- 4. The method of claim 1 further including the step of eliminating certain materials by requiring a pre-determined resistivity range.
- 5. The method of claim 3 further wherein the resistivity range is between 0.1 μΩm and 10.0 μΩm.
- 6. The method of claim 1 including selecting a material on the basis of at least one of the following group of properties:
a resistivity between 0.1 μΩm and 10.0 μΩm; chemically inert in air; chemically inert in the chosen ink; and depositable by CVD, sputtering or other thin film deposition technique.
- 7. The method of claim 1 including selecting a material from a group including:
silicides and carbides of titanium; borides, suicides, carbides and nitrides of tantalum, molybdenum, niobium, chromium, tungsten, vanadium, and zirconium.
- 8. A method of manufacturing a thermoelastic element that includes at least one expansive element, the method including:
selecting a material for use as the expansive element in the thermoelastic design by deriving an indicator of the material's potential effectiveness for that use, said method including the step of calculating a dimensionless constant εγ for that material in accordance with the formula: 14ε γ=E γ2Tρ Cwherein E is the Young's modulus of the material; γ is the coefficient of thermal expansion; T is the maximum operating temperature, ρ is the density and C is the specific heat capacity and selecting the material on the basis of ε, and manufacturing the thermoelastic element with the at least one expansive element formed of the selected material.
- 9. The method of claim 8 further including the step of normalizing the dimensionless constant relative to that of silicon to a value ε which is achieved by deriving the value εγ for the material of interest at the relevant temperature value and dividing this by the value of ε obtained for silicon at that same temperature.
- 10. The method of claim 8 further including determining mε where
- 11. The method of claim 8 further including the step of eliminating certain materials by requiring a pre-determined resistivity range.
- 12. The method of claim 11 further wherein the resistivity range is between 0.1 μΩm and 10.0 μΩm.
- 13. The method of claim 8 including selecting a material on the basis of at least one of the following group of properties:
a resistivity between 0.1 μΩm and 10.0 μΩm; chemically inert in air; chemically inert in the chosen ink; and depositable by CVD, sputtering or other thin film deposition technique.
- 14. The method of claim 8 including selecting a material from a group including:
suicides and carbides of titanium; borides, suicides, carbides and nitrides of tantalum, molybdenum, niobium, chromium, tungsten, vanadium, and zirconium.
CO-PENDING APPLICATIONS
[0001] Continuation application of U.S. Ser. No. 09/693,079 filed on Oct. 20, 2000
[0002] Various methods, systems and apparatus relating to the present invention are disclosed in the following co-pending applications filed by the applicant or assignee of the present invention on May 23, 2000:
109/575,197,09/575,195,09/575,159,09/575,132,09/575,123,09/575,148,09/575,130,09/575,165,09/575,153,09/575,118,09/575,131,09/575,116,09/575,144,09/575,139,09/575,186,09/575,185,09/575,191,09/575,145,09/575,192,09/575,181,09/575,193,09/575,156,09/575,183,09/575,160,09/575,150,09/575,169,09/575,184,09/575,128,09/575,180,09/575,149,09/575,179,09/575,187,09/575,15509/575,133,09/575,143,09/575,196,09/575,19809/575,178,09/575,164,09/575,146,09/575,174,09/575,163,09/575,168,09/575,154,09/575,12909/575,124,09/575,188,09/575,189,09/575,162,09/575,172,09/575,170,09/575,171,09/575,161,09/575,141,09/575,125,09/575,142,09/575,140,09/575,190,09/575,138,09/575,126,09/575,127,09/575,158,09/575,117,09/575,147,09/575,152,09/575,176,09/575,15109/575,177,09/575,17509/575,115,09/575,114,09/575,113,09/575,112,09/575,111,09/575,108,09/575,109,09/575,110,09/575,182,09/575,173,09/575,194,09/575,136,09/575,119,09/575,135,09/575,157,09/575,166,09/575,134,09/575,121,09/575,137,09/575,167,09/575,120,09/575,122
[0003] The disclosures of these co-pending applications are incorporated herein by cross-reference.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09693079 |
Oct 2000 |
US |
Child |
10636259 |
Aug 2003 |
US |