Selective deposition of metal silicides

Abstract

Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.

Description

BACKGROUND

Field

Embodiments of the present disclosure generally relate to methods for metal silicide deposition.

Description of the Related Art

Accurate positioning of materials on nanoscale devices is critical for manipulation of atomic-scale properties for next-generation nanoelectronics. For semiconductor fabrication, detailed positioning of materials with excellent conformality and stoichiometry is utilized to meet demand for cost, yield, and throughput. As metal-oxide-semiconductor field effect transistors (MOSFETs) are scaled to less than <10 nm channel length, there it is desirable to overcome the constraints originating from top-down processes, such as damage from reactive ion etching and structural complexity in structure alignment on three-dimension (3D) surfaces.

Recently, as MOSFET devices have been fabricated in 3D structures (FinFETs), there has been increasing interest in nanoscale area-selective deposition while maintaining conformal film quality. One approach to area-selective deposition is the utilization of self-assembled monolayers (SAMs) as passivation layers in combination with atomic layer deposition (ALD) processes. The passivation layers block or eliminate surface functional groups that are reactive towards ALD precursors so that selectivity can be obtained; however, the SAMs approach still utilizes selective deposition of the passivation layer. Furthermore, the passivation layers are selectively removed after the selective deposition which necessitates additional process complexity and reduced throughput.

Thus, what is needed in the art are improved methods for selective material deposition.

SUMMARY

In one embodiment, a substrate processing method is provided. The method includes heating a substrate having a silicon containing surface to a first temperature, exposing the substrate to a plasma comprising hydrogen, exposing the substrate to a first dosage of a MoF₆ precursor, and exposing the substrate to a second dosage of a Si₂H₆ precursor. The exposing the substrate to a first dosage and the exposing the substrate to a second dosage is sequentially cycled and after the sequential cycling, the substrate is exposed to a third dosage of the Si₂H₆ precursor.

In another embodiment, a substrate processing method is provided. The method includes positioning a substrate on a heater in a reaction chamber having chamber walls, heating the substrate on the heater to a first temperature, maintaining the chamber walls at a second temperature less than the first temperature, and exposing a silicon containing surface of the substrate to hydrogen. The substrate is exposed to a first dosage of a MoF₆ precursor, the substrate is exposed to a second dosage of a Si₂H₆ precursor, the exposing the substrate to a first dosage and the exposing the substrate to a second dosage is sequentially cycled, and after the sequential cycling, the substrate is exposed to a third dosage of the Si₂H₆ precursor.

In yet another embodiment, a substrate processing method is provided. The method includes heating a substrate to a first temperature, exposing a silicon containing surface of the substrate to a hydrogen containing plasma, exposing the substrate to a first dosage of a MoF₆ precursor, and exposing the substrate to a second dosage of a Si₂H₆ precursor. The exposing the substrate to a first dosage and the exposing the substrate to a second dosage is sequentially cycled, after the sequential cycling, the substrate is exposed to a third dosage of the Si₂H₆ precursor, and the substrate is annealed after the exposing the substrate to a third dosage at a second temperature of between about 500° C. and about 550° C.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, may admit to other equally effective embodiments.

FIG. 1A illustrates X-ray photoelectron spectroscopy (XPS) data of MoSi_x film selectivity on a silicon substrate according to an embodiment described herein.

FIG. 1B illustrate XPS data of MoSi_x film selectivity on a silicon oxynitride substrate according to an embodiment described herein.

FIG. 2A illustrates XPS oxidation state data of Si and Mo on a silicon substrate according to an embodiment described herein.

FIG. 2B illustrates XPS oxidation state data of Si and Mo on a silicon substrate according to an embodiment described herein.

FIG. 3A illustrates XPS chemical composition data of various elements present on different substrate types prior to ALD processing according to an embodiment described herein.

FIG. 3B illustrates XPS chemical composition data of various elements present on different substrate types after 5 ALD cycles according to an embodiment described herein.

FIG. 3C illustrates XPS chemical composition data of various elements present on different substrate types after additional ALD cycles according to an embodiment described herein.

FIG. 4A illustrates XPS chemical composition data of various elements present on different substrate types prior to ALD processing according to an embodiment described herein.

FIG. 4B illustrates XPS chemical composition data of various elements present on different substrate types after 5 ALD cycles according to an embodiment described herein.

FIG. 4C illustrates XPS chemical composition data of the substrates of FIG. 4B after an annealing process according to an embodiment described herein.

FIG. 5A illustrates XPS depth profiling data of a MoSi_x film after Ar sputtering according to an embodiment described herein.

FIG. 5B illustrates XPS chemical composition data of the MoSi_x film according to an embodiment described herein.

FIG. 5C illustrates data representative of the chemical composition of the MoSi_x film versus time according to an embodiment described herein.

FIG. 6A illustrates XPS depth profiling data of a MoSi_x film after Ar sputtering according to an embodiment described herein.

FIG. 6B illustrates surface composition data of a MoSi_x film according to an embodiment described herein.

FIG. 6C illustrates bulk composition data of the MoSi_x film of FIG. 6B according to an embodiment described herein.

FIG. 6D illustrates data representative of the chemical composition of the MoSi_x film versus time according to an embodiment described herein.

FIG. 7 is a cross-sectional tunneling electron micrograph (TEM) of a MoSi_x film selectively deposited on silicon preferentially to other material present on the substrate according to an embodiment described herein.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

Embodiments described herein include methods which utilize substrate-dependent reactivity of ALD precursors for area-selective deposition. More specifically, embodiments of the disclosure relate to selective deposition of MoSi_x on Si preferentially to SiO₂, SiON and SiN_x using substrate selectivity of MoF₆ and Si₂H₆. To achieve a stoichiometric MoSi₂ film, additional Si incorporation into the film after the MoF₆ and Si₂H₆ ALD cycles was performed by dosing Si₂H₆ onto a Mo rich MoSi_x film.

Highly selective deposition of MoSi_x on Si preferentially to SiO₂ and SiN_x was achieved via atomic layer deposition (ALD) using MoF₆ and Si₂H₆ precursors at a temperature of about 120° C. Deposition selectivity was enabled by the lack of chemical reactivity between the reactants (MoF₆ and Si₂H₆) and SiO₂ and SiN_x containing substrates. In contrast, MoF₆ nucleated in a self-limiting manner on H-terminated Si, and a subsequent Si₂H₆ exposure reduced MoF_x to Mo⁰ which is consistent with Mo—Si bond formation.

X-Ray photoelectron spectroscopy (XPS) revealed that 5 ALD cycles of MoF₆ and Si₂H₆ selectively deposited a sub-stoichiometric MoSi₂ film on the Si substrate. In the ALD process, the MoF₆ and Si₂H₆ precursors were sequentially cycled in a repeating manner with a purge between each successive precursor exposure. Additional Si₂H₆ doses on the sub-stoichiometric MoSi₂ film incorporated more Si into the film without disturbing the deposition selectivity over SiO₂ and SiN_x. In one embodiment, a bulk of the MoSi_x film has a ratio of Si:Mo between about 1.7 and about 1.9 with less than about 10% F and O impurities. Embodiments described herein are believed to be advantageous over conventional high pressure Si ALD cycles for the formation of silicide materials, for example, in the formation of source/drain contact structures.

Deposition selectivity of MoSi_x was analyzed, according to the embodiments described herein, on a patterned Si substrate containing three-dimensional (3D) nanoscale SiO₂ and SiN_x features. Cross-sectional transmission electron microscopy (TEM) indicated that selective MoSi_x deposition was achieved on nanoscale 3D structures. In one embodiment, less than about 10 nuclei/μm² were present on SiO₂; since SiO₂ has approximately A10⁷/μm² OH groups, this corresponds to a selectivity of about 10⁷:1 between the OH groups on SiO₂ and Si—H groups on Si. Thus, it is believed that substrate-dependent selectivity for silicide deposition enables the elimination of passivant (i.e. SAMs) utilization.

Experimental

Various substrate types were utilized for the MoSi_x silicide formation processes described herein. Four types of substrates were utilized: P-type Si (100) (Boron-doped, available from Virginia Semiconductor, Fredericksburg, Va.), thermally grown SiO₂ on Si (100) (available from University Wafer, South Boston, Mass.), SiON (available from Applied Materials, Inc., Santa Clara, Calif.) and patterned substrates having Si, SiO₂, and SiN_x material surfaces on a single substrate. The SiON (silicon oxynitride) in described herein is Si₃N₄, unless otherwise noted, which has been subjected to reactive ion etching and plasma ashing in oxygen during fabrication. Thus, the SiON substrate contains oxygen which is similar to the conditions of Si₃N₄ after processing in integrated 3D nanoscale devices.

The substrates were diced into 12 mm×3 mm pieces and degreased with acetone, methanol, and deionized (DI) H₂O. The native oxide on Si was removed by immersing the degreased substrates into a 0.5% HF(aq) solution for 30 seconds. For consistency in cleaning procedure, the SiO₂, SiON, and patterned substrates were subjected to the same cleaning procedure. It is also contemplated that a plasma based native oxide removal process may be utilized. For example, an NF₃/H₂ and/or NF₃NH₃ plasma cleaning process may be utilized to clean and hydrogen terminate a silicon containing surface of the substrates. On SiON substrates, the NF₃ plasma treatment is believed to prevent or substantially reduce deposition selectivity loss by passivating active hydroxyl nucleation sites. In certain embodiments, the native oxide removal process is the SICONI® pre-clean process available from Applied Materials, Inc., Santa Clara, Calif.

The substrates were blow-dried using high purity N₂ gas. The Si, SiO₂, SiON, and patterned substrate were loaded together on a single substrate holder to expose the substrates to the same ALD conditions. The substrates were loaded into a load lock chamber pumped by a turbo molecular pump and backed by a mechanical pump. The base pressure of the load lock was about 2.0×10⁻⁷ Torr. Subsequently, the substrates were transferred in-situ to an ultra-high vacuum chamber with a base pressure of about 3.0×10⁻¹⁰ Torr pumped by an ion pump and titanium sublimation pump. The ultra-high vacuum chamber was equipped with a monochromatic XPS apparatus (XM 1000 MkII/SPHERA, available from Scienta Omicron, Inc., Denver, Colo.), a scanning tunneling microscope (STM) (available from Scienta Omicron, Inc., Denver, Colo.), and annealing system using a pyrolytic boron nitride (PBN) heater.

The substrates were first annealed at 120° C. in the ultra-high vacuum chamber and the chemical composition of the substrates were determined using XPS. The substrates were transferred in-situ to a reaction chamber having a base pressure of about 5.0×10⁻⁷ Torr. For MoSi_x deposition, MoF₆ (99% purity, available from Synquest Laboratories, Alachua, Fla.) and Si₂H₆ (99.99% purity, available from Air Liquide USA, LLC, Houston, Tex.) precursors were employed.

During the ALD cycles, a constant purge of N₂ (80 mTorr) was used, and the pressure of this purge was controlled using a leak valve. The MoF₆ and Si₂H₆ doses were regulated using pneumatic valves controlled by LabView software (available from National Instruments, Austin, Tex.). An expansion volume was employed for the MoF₆ and Si₂H₆ doses. Utilization of the expansion volume includes filling a secondary volume with MoF₆ or Si₂H₆ and dosing the precursors from their respective secondary volumes. The fill time for the MoF₆ was between about 10 ms and about 10 ms, such as about 40 ms. The dose time for the MoF₆ was between about 10 ms and about 100 ms, such as about 50 ms. The fill time for the Si₂H₆ was between about 1 ms and about 50 ms, such as about 18 ms. The dose time for the Si₂H₆ was between about 1 ms and aboutg 50 ms, such as about 18 ms.

The exposures of MoF₆ and Si₂H₆ were calculated in terms of Langmuirs (L) where 1 L=1×10⁻⁶ Torr×1 sec. The pressure spikes during the exposures were monitored using a convectron gauge in the reaction chamber. The doses were about 1.8 MegaL for MoF₆ and about 4.2 MegaL for Si₂H₆ with a 2-minute wait time between the doses. The substrates were heated using the PBN heater, and the temperature was maintained at a temperature of between about 100° C. and about 150° C., such as about 120° C. The chamber walls were maintained at a temperature of between about 65° C. and about 85° C. In one embodiment, the MoF₆ doses were between about 1.0 MegaL and about 10 MegaL. In another embodiment, the Si₂H₆ doses were between about 1.0 MegaL and about 10 MegaL.

After the deposition cycles, the substrates were transferred in-situ to the ultra-high vacuum chamber for XPS and STM analysis. For the XPS measurement, the X-rays were generated by an Al Kα anode (1486.7 eV). XPS data was acquired using constant analyzer-energy (CAE) with a step width of 0.1 eV and a pass energy of 50 eV. The XPS detector was positioned at 60° to the substrate normal (30° take-off angle from the substrate surface) with a detector-acceptance angle of 7°. XPS spectra were analyzed after correcting each peak area with its respective relative sensitivity factor using a Casa XPS v.2.3 program. All of the chemical components in this work were normalized to the sum of all components. Scanning tunnel microscopy was performed with a substrate bias of −1.8 V and a constant current of 200 pA.

To investigate the elemental composition of the bulk of the film, Ar⁺ sputtering was performed in conjunction with XPS. A lens voltage of 5 kV with a beam current of 1.2 μA at 6.0×10⁻⁷ Torr of Ar was employed; since a raster was used to cover the full substrate area, the current density was approximately 1.2 uA/50 mm². The MoSi_x substrate was maintained at 25° C. during sputtering to minimize any thermal desorption.

Results

FIG. 1A illustrates data of the XPS chemical composition of the HF cleaned Si surface before and after sequential doses of MoF₆ and Si₂H₆ at 120° C. Two sets of 5.4 MegaL MoF₆ were dosed on a HF cleaned Si substrate at 120° C. XPS showed saturation of Mo at 16%. Afterward, 4.2 Si₂H₆ MegaL and an additional 42 MegaL of Si₂H₆ were dosed onto the MoF₆-saturated Si surface at 120° C. resulting in Si being saturated at 59%. In one embodiment, the MoF₆ was dosed between about 1 MegaL and about 10 MegaL. In another embodiment, the SI₂H₆ was dosed between about 1 MegaL and about 10 MegaL. In another embodiment, the additional Si₂H₆ dose was between about 20 MegaL and about 50 MegaL.

After the HF clean, all the Si was in an oxidation state of 0 with 9% O and 12% C contamination. The contamination is believed to be caused by adventitious hydrocarbon adsorption during the substrate transfer into vacuum. HF(aq) was utilized to eliminate native oxide on Si and leaves the Si surface H-terminated. It should be noted that the Si 2p data in FIG. 1 indicates the total amount of Si while the Si (0) data indicates the amount of Si which is in an oxidation state of 0.

After the 5.4 MegaL of MoF₆ at 120° C., 14% Mo and 38% F were deposited on the HF cleaned Si surface. After an additional 5.4 MegaL of MoF₆ at 120° C. were dosed, the Mo concentration increased from 14% to 16% and the F concentration increased from 38% to 42%. This small increase in Mo and F content after an additional 5.4 MegaL of MoF₆ shows that the reaction of MoF₆ on HF cleaned Si is self-limiting. After the Si surface was saturated with MoF_x, the ratio of F/Mo was 2.6 and all of the Si was in an oxidation state of 0. Sequential doses of 4.2 MegaL of Si₂H₆ and 42 MegaL of Si₂H₆ indicate that the Si₂H₆ reaction also saturates on the MoF_x covered Si surface. It is believed that with a thicker sub-stoichiometric MoSi₂ film, additional Si can be incorporated onto the surface. However, the Si₂H₆ reacts in a self-limiting manner on a thinner (monolayer) film of Mo.

After saturation of Si₂H₆, the Si content was 59% and F decreased to 10%. Since the substrate is Si, this increase of the Si content after dosing Si₂H₆ could be partially ascribed to the substrate since F desorption occurred. However, attenuation of the Mo after Si₂H₆ dosing was observed which is consistent with the deposition of Si. The reaction of MoF₆ and Si₂H₆ on H-terminated Si demonstrates the potential for MoSi_x ALD on Si—H terminated Si.

FIG. 1B illustrates XPS chemical composition data for the same series of MoF₆ and Si₂H₆ saturation doses described above with regard to FIG. 1A but on a SiON substrate. As illustrated, no reaction was observed. It should be noted that while the SiON substrate was nominally SiON, XPS showed only negligible amounts of N on the surface and so this substrate is mostly ion damaged SiO_x. After the first 3 pulses of MoF₆, 8% F and negligible Mo (<1%) were observed. For the rest of the saturation doses, the SiON surface remained unreactive to both MoF₆ and Si₂H₆. While the SiON used in this study is ion damaged, the Si is in oxidation states of +3 and +4 and the data is consistent with the strong Si—O, Si—N, SiO—H bonds, thus substantially precluding the Si from forming bonds to Mo.

FIGS. 2A and 2B illustrates XPS spectra of Si 2p and Mo 3d for the HF cleaned Si substrate are shown to compare the oxidation states at each experimental operation. FIG. 2A illustrates Si 2p peaks after sequential MoF₆ and S₂H₆ doses show that Si remained in oxidation state of 0 after the 10.8 MegaL of MoF₆ at 120° C. (blue line) which is consistent with Mo—Si bond formation and no etching of Si by F. After the 4.2 MegaL Si₂H₆ dose at 120° C. (red line), most of the Si stayed in an oxidation state of 0. This is consistent with the formation of a monolayer of MoSi₂. A small oxidized Si peak emerged at higher binding energies which might be SiH_xF_4-x, (x=2 or 3) or SiO_x at the surface. FIG. 2B illustrates Mo 3d peaks after sequential MoF₆ and S₂H₆ doses shows that the Mo 3d peaks existed in multiple oxidation states after the saturation dose of MoF₆ (black and blue line). After a Si₂H₆ dose (red line), all of the Mo was reduced and the peak was centered at 227.4 eV which is consistent with MoSi₂ formation.

After the first 5.4 MegaL of MoF₆, the Si 2p peak remained at an oxidation state of 0 which is consistent with Si—Mo bond formation. The Mo 3d peaks appeared at multiple oxidation states which indicates that the surface species are MoF_x with x=4, 5 and 6 (black line). The additional 5.4 MegaL of MoF₆ did not change the oxidation states of the Si 2p or the Mo 3d peaks (blue line). The data suggests formation of Si—Mo—F_r at the surface. It is noted that the F/Mo ratio was 2.6 after the MoF₆ saturation dose (FIG. 1A XPS data) while the Mo is in oxidation states of 4-6; therefore, it is believed that there is some Mo—O bond formation. A small shoulder peak at a higher binding energy (103 eV) on the Si 2p XPS peak appeared after a 4.2 MegaL of Si₂H₆ dose (red line). This is consistent with Si—F or Si—O formation. The Mo 3d spectra shows that after a single Si₂H₆ dose, all of the Mo is reduced to Mo⁰ with a binding energy of 227.4 eV. This is consistent with the formation of a monolayer of MoSi_x and the transfer of any residual oxygen or fluorine from Mo to Si in the form of Si—O and Si—F bonds. A simplified reaction of MoF₆ and Si₂H₆ can be described as:MoF₆(g)+1.55i₂H₆(g)→MoSi₂(s)+SiF₄(g)+3.5H₂(g)+2HF(g)

ALD characteristics of MoSi_x on the Si substrate and the selectivity over the SiO₂ and SiN_x substrates were verified via XPS of MoSi_x deposition on a patterned substrate. FIG. 3A illustrates the chemical composition of a set of three substrates: HF cleaned Si, HF cleaned SiO₂, and HF cleaned patterned substrate. FIG. 3B illustrates the chemical composition of each of the FIG. 3A substrates after 5 ALD cycles of MoF₆ and Si₂H₆ at 120° C. The data indicated that a Si-deficient MoSi_x was selectively deposited on Si and not on SiO₂. The Si⁰ component of the patterned sample was also selectively attenuated by the MoSi_x deposition. FIG. 3C illustrates the chemical composition of each of the FIG. 3B substrates after an additional 25.2 MegaL (between 3 pulses and 10 pulses) of Si₂H₆. The additional Si₂H₆ incorporated Si onto the MoSi_x surface. Selectivity with respect to SiO₂ was maintained during the additional Si₂H₆ pulses (SiO₂ had 0% Mo and 0% Si⁰ throughout the ALD process).

The three substrates were loaded together on a single substrate holder to ensure that they were exposed to identical deposition conditions. The Si and SiO₂ substrates allowed verification of selectivity during deposition on the patterned substrate. The patterned substrate has SiO₂ layers sandwiched by SiN_x on top of the Si substrate. It is noted that the SiN_x on the patterned substrate was actually SiON since it was ion damaged and ashed in O₂ during fabrication. As shown in FIG. 3A, a 30 s HF clean removed the native oxide on Si. The thermally grown SiO₂ was 300 nm thick and the 30 s of HF clean did not change the elemental composition or oxidation states of SiO₂. The HF cleaned patterned substrate was composed of a mixture of SiN_x, SiO_x and Si⁰.

XPS was performed after 5 ALD cycles of MoF₆ and Si₂H₆ at 120° C. as shown in FIG. 3B. XPS showed a surface composition of 32% Mo and 10% Si on the Si substrate which corresponds to highly Si-deficient MoSi_x. There was no MoSi_x deposition on the SiO₂ substrate consistent with highly selective ALD. On the patterned substrate, XPS showed that 5% Mo was deposited, and the Si⁰ was attenuated to 1%. The fraction of N and O at the surface did not change significantly during ALD on the patterned substrate. The data is consistent with Si-deficient MoSi_x being deposited selectivity on the 6% of Si⁰ on the patterned substrate.

Deposition selectivity on the pattern substrates is consistent with three aspects of embodiments described herein: (1) MoSi_x deposition on the Si substrate but not on the SiO₂ substrate. (2) After the MoSi_x deposition, the Si⁰ (not the higher oxidation state Si peaks from Si—N and Si—O) was attenuated on the pattered substrate. (3) Numerically, about 4% Mo deposition on the patterned substrate with 6% Si⁰ is proportional to having 32% Mo on the Si substrate with 54% Si⁰ on the HF clean surface.

Even though a monolayer of MoSi₂ was able to be deposited on Si in the ALD saturation experiments described in FIG. 1 and FIG. 2, consecutive ALD cycles did not produce stoichiometric MoSi₂. It is believed that the formation of Si deficient MoSi_x is due to the surface Si—H species desorbing during the fluorosilane elimination process and to residual Mo—F bonds which are not readily removed by standard Si₂H₆ dosing. For the first 1-3 monolayers, there is an excess of Si from the substrate present to assist in fluorine desorption, but for thicker films, Mo—F surface bonds may persist since the only available Si is from the gaseous Si₂H₆. The overall fluorosilane elimination chemistry using MoF₆ and Si₂H₆ is consistent with one of two chemical reactions:MoF₆(g)+Si₂H₆(g)→Mo(s)+2SiHF₃(g)+2H₂(g)  1:2MoF₆(g)+1.5Si₂H₆(g)→2Mo(s)+2SiF₄(g)SiHF₃(g)+3.5H₂(g)+2HF(g)  2:

To form MoSi₂, the three substrates were exposed to an additional 25.2 MegaL (between 3 pulses and 10 pulses, such as 6 pulses) of Si₂H₆ at 120° C. (See FIG. 3C). After the additional Si₂H₆ exposure, Si increased to 20% on the Si substrate consistent with Si being incorporated into the film or on the surface of the substrate. The additional Si₂H₆ doses did not decrease the selectivity for deposition on Si versus SiO₂.

FIGS. 4A-4C illustrate XPS chemical composition data of selective MoSi_x deposition on HF cleaned Si, SiO₂, and SiON with a post deposition anneal. FIG. 4A illustrates XPS chemical composition of Si, SiO₂, and SiON substrates after the HF clean. FIG. 4B illustrates XPS chemical composition data showing the MoSi_x was selectively deposited only on Si after the 5 ALD cycles of MoSi_x followed by the additional 6 pulses (25.2 MegaL) of Si₂H₆ at 120° C. FIG. 4C illustrates XPS chemical composition data of the substrates with a post-deposition anneal (PDA) performed at 520° C. for 3 mins. As illustrated, the PDA removed F from the MoSi_x film and reduced the Mo to Mo⁰.

FIG. 4A illustrates that the SiON surface is composed primarily of SiN_x after the HF clean. After the 5 cycles of MoSi_x ALD followed by an additional 25.2 MegaL of Si₂H₆, there was 24% Mo and 18% Si on HF cleaned Si while less than 1% Mo was detected on the SiO_x and SiN_x surfaces as shown in FIG. 4B. Subsequently, the three substrates were annealed at 520° C. for 3 minutes which decreased F from 25% to 3% on the Si substrate. The 520° C. PDA also reduced the Mo to Mo⁰ on the Si substrate and decreased the Si:Mo ratio from about 0.75 to about 0.5 at the surface. This is consistent with the desorption of surface F in the form of SiHF₃ or SiF₄. The XPS analysis of the PDA indicates that the F is removed from the film by the PDA which reduces the probability of F diffusion into adjacent MOSFET device structures.

Using an in-situ STM and ex-situ atomic force microscopy (AFM), the surface topographies were investigated after the deposition and the PDA on the Si and SiO₂ substrates. A separate substrate of HF cleaned Si after 20 cycles of MoF₆ and Si₂H₆ was prepared for the in-situ STM. The STM data indicated that the MoSi_x film was atomically flat and conformal with an RMS roughness of about 2.8 Å. The aforementioned substrate was annealed in-situ at 500° C. for 3 mins in the ultra-high vacuum chamber at a pressure of about 5.0×10⁻¹⁰ Torr. After the 500° C. anneal, the film became flatter with an RMS roughness of about 1.7 Å.

Another substrate of MoSi_x/HF cleaned Si after 5 ALD cycles at 120° C. followed by an in-situ 550° C. anneal was taken into an ex-situ furnace for a 900° C. spike anneal in 5% H₂ balanced with N₂. After the 900° C. spike anneal, AFM was used to obtain the surface morphology. The film retained a sub-nanoscale RMS roughness of 4.75 Å demonstrating that the MoSi_x film has high thermal stability up to about 900° C.

Ex-situ AFM image data of the SiO₂ substrate surface after dosing 5 ALD cycles at 120° C. followed by an in-situ 550° C. anneal for 3 minutes in order to confirm the selectivity was performed by counting the number of nuclei on the substrate surface. The density of nuclei was about 9 nuclei/μm² which confirms the Si deposition preference over SiO₂. It is believed that the high deposition selectivity of the embodiments described herein is further improved by controlling wall temperature of the reaction chamber and by using short high pressure Si₂H₆ pulses and longer purge cycles to facilitate ALD and avoid a CVD deposition regime.

A depth profile study was also performed to determine the internal composition of the MoSi_x film. FIG. 5A illustrates XPS chemical composition data after Ar⁺ sputtering on HF cleaned Si after the 5 cycles of MoF₆ and Si₂H₆ at 120° C. FIG. 5B illustrates XPS peaks of Si 2p after sequential Ar⁺ sputtering, the results of which show that the bulk of the MoSi_x film consisted mostly of Si⁰. FIG. 5C illustrates chemical composition data of the deposited film plotted versus Ar⁺ sputter time on Si after 5 cycles of MoF₆ and Si₂H₆ at 120° C.

The XPS data shown in FIG. 5A was derived from the MoSi_x film deposited on a HF cleaned Si substrate at 120° C. using 5 ALD cycles of MoF₆ and Si₂H₆ without additional Si₂H₆ incorporation. As the sputtering time increased, the MoSi_x film became thinner until the underlying Si substrate was exposed. The first 10 mins of sputtering decreased the F from 35% to 8% while the Mo shifted from a mixture of oxidized Mo and Mo⁰ to pure Mo⁰. The data is consistent with the surface F being bonded primarily to Mo.

Following consecutive sputtering cycles, the amount of Si increased and the amount of Mo decreased. Furthermore, the amount of Si⁰ increased together with the total Si and reached a maximum at 43% after 100 mins of a total sputtering time. The Si⁰ to Mo⁰ ratio was employed to distinguish the pure MoSi_x phase because, in the pure MoSi_x phase, both Mo and Si are bonded to each other and have an oxidation state of 0. After removal of the silicon oxide and MoF_x species at the substrate surface, the percentage of Si⁰ exceeded that of Mo⁰. The Si⁰:Mo⁰ ratio in the bulk of the MoSi_x film was 1.41 which corresponds to a Si-deficient MoSi_x film. It is noted that in the center of the film the Si:Mo ratio is 1.77 therefore, in the absence of background O₂/H₂O, it is possible the Si⁰:Mo⁰ ratio would be closer to 2.

FIG. 5B illustrates the raw XPS spectra of Si 2p corresponding to each XPS measurement of FIG. 5A. The Si peak at 99.2 eV increased and broadened to higher binding energy after the 4^th sputtering cycle. In contrast, the energy of the Mo peak corresponded to Mo⁰ after each sputtering cycle. Thus it is believed that the bulk MoSi_x film is predominantly Si⁰ and Mo⁰ in the form of MoSi_x while the top surface and the bottom interface was rich in SiO_x. The top SiO_x is consistent with contamination from the chamber environment while the bottom interfacial oxide is consistent with the imperfect ex-situ HF clean.

The sub-stoichiometric oxide at the bottom interface did not affect the deposition and film quality indicating that the selectivity of the MoSi_x ALD is sensitive to the quality of the SiO₂. FIG. 5C illustrates the percentages of the chemical components obtained from the XPS measurement in FIG. 5A. After the second sputtering cycle (40 mins of total sputtering time), F decreased to below 3% and eventually reached 0%. O in the bulk of the film was <10% but slowly increased to 15% at the MoSi_x—Si interface which is consistent with the existence of an interfacial oxide layer.

To understand the effect of the additional Si₂H₆ doses on the Si:Mo ratio of MoSi_x film, XPS depth profiling was performed on a MoSi_x film which had the additional Si incorporation. An additional 6 pulses (25.2 MegaL) of Si₂H₆ were dosed at the end of the 5 ALD cycles of MoF₆ and Si₂H₆ at 120° C. followed by an anneal at 530° C. for 3 mins on dry cleaned Si. The post anneal dry clean process described herein utilized a plasma of NF₃ and NH₃ with Ar as a carrier gas.

FIGS. 6A-6D illustrate XPS profile data of the MoSi_x film with after exposure to the additional Si₂H₆ doses. FIG. 6A illustrates XPS chemical composition data after Ar⁺ sputtering dry cleaned Si after 5 cycles of MoF₆ and Si₂H₆ followed by additional 6 pulses (25.2 MegaL) of Si₂H₆ at 120° C. FIG. 6B illustrates XPS surface composition data after 5 ALD cycles of MoF₆ and Si₂H₆ with and without extra Si₂H₆ pulses. Si:Mo ratios were 0.33 for 5 ALD and 0.89 for 5ALD+6×Si₂H₆ which is consistent with Si incorporation on the surface. FIG. 6C illustrates XPS bulk composition data of MoSi_x with and without extra Si₂H₆ pulses after removing surface contaminations using the Ar⁺ sputtering. Si:Mo ratios were 1.77 for 5 ALD and 1.96 for 5ALD+6×Si₂H₆. FIG. 6D illustrates XPS chemical composition data of the MoSi_x film is plotted versus Ar⁺ sputter time on Si after 5 cycles of MoF₆ and Si₂H₆ followed by additional Si₂H₆ pulses at 120° C.

FIG. 6A presents a series of depth-profile XPS after each operation performed on the dry cleaned substrate. After the 6×Si₂H₆/5ALD cycles, there was 28% F, 20% Si, and 28% Mo at the substrate surface. F on the surface was mostly removed after the 530° C. anneal and the Mo was all reduced to Mo⁰ which was consistent with the desorption of F from the surface as presented in FIG. 4C. The Si:Mo ratio was 0.89 at this operation. By comparison, the Si:Mo ratio of the MoSi_x film without the extra Si₂H₆ doses was only 0.33 as illustrated in FIG. 6B.

After removing the surface oxide contamination, the Si⁰:Mo⁰ in the bulk was 1.32 (Si:Mo=1.96) for MoSi_x with extra Si₂H₆ pulses. This was comparable to the Si⁰:Mo⁰=1.41 (Si:Mo=1.77) in the bulk of MoSi_x without extra Si₂H₆ incorporation as depicted in FIG. 6C. Thus, it is believed that the extra Si₂H₆ pulses increase the Si content at the Si-deficient MoSi_x surface after the ALD cycles. In contrast, the Si:Mo ratios in the bulk of the MoSi_x films were close to stoichiometric MoSi₂. FIG. 6D shows the XPS percentage of each chemical component in the function of the Ar⁺ sputter time which is consistent with the MoSi_x formation in bulk of the MoSi_x film.

In one embodiment, 4.2 MegaL of Si₂H₆ was introduced to the reaction chamber over a duration of 6 seconds using a pneumatic valve. The Si₂H₆ process characteristics utilize an approximately 3 times larger Si₂H₆ exposure over a dosing duration about 10 times shorter than conventional Si₂H₆ dosing parameters. Thus, embodiments described herein utilize a 30× higher partial pressure during the ALD dose when compared to conventional dosing regimes. The 30× higher instantaneous pressure during dosing is believed to enable a precursor mediated Si₂H₆ chemisorption layer to remain on the surface long enough to react with the Mo to incorporate more Si into the MoSi_x film. The Si incorporation is also believed to be self-limiting which enables a growth rate of MoSi_x of about 1.2 nm/cycle.

The resistance of the MoSi_x film was measured using a 4-point probe measurement. For the electrical measurement, updoped Si (001) with >10000 ohm·cm resistance was used as a substrate. For the electrical measurement, 10 cycles of MoSi_x ALD at 120° C. was deposited on an HF cleaned intrinsic (semi-insulating) Si substrate followed by an in-situ 550° C. anneal for 3 minutes and a 900° C. spike anneal in 5% H₂ balanced in N₂. Ni dots were deposited as a probe contact. The resistance was 110 Ohm and, using an infinite sheet approximation, the resistivity was calculated as:ρ=ktR_max=(4.53)×(10×10⁻⁷)×(110)=498 μΩcmwhere k is a constant, t is thickness and R_max is the measured maximum resistance.

A cross-sectional TEM study was performed on the patterned substrate to confirm the selectivity of MoSi_x on the nanostructured pattern. FIG. 7 is a cross-sectional TEM image of the MoSi_x/HF cleaned patterned substrate. On the HF cleaned patterned substrate, 5 cycles of MoSi_x ALD followed by an additional 25.2 MegaL of Si₂H₆ were dosed at 120° C. The elemental composition of this substrate at each deposition step is shown in FIGS. 3A-3C. The TEM image shows complete selectivity of MoSi_x deposition on Si but not on SiN_x nor SiO₂. The thickness of the MoSi_x film deposited on Si was about 6.3 nm after the 5 ALD cycles followed by an additional 25.2 MegaL which achieved a growth rate of about 1.2 nm/cycle. Due to the growth rate per cycle of MoSi_x ALD, 5 ALD cycles is believed to be sufficient for contact materials and contact device structures.

Selective atomic layer deposition of sub-stoichiometric MoSi₂ was achieved by a selective process on hydrogen-terminated Si versus thermally grown SiO₂, ion damaged SiON, and SiN_x. The selectivity is based on the favorable reactivity of MoF₆ and Si₂H₆ on H—Si but not on SiO₂ or SiN_x since Si—O, Si—N, and SiO—H bonds are strong enough that they cannot be cleaved by either precursor at 120° C. Both MoF₆ and Si₂H₆ showed self-limiting behavior which allowed deposition of a highly conformal and smooth film with a root mean square (RMS) roughness of 2.8 Å. PDA in ultra-high vacuum at a temperature of between about 500° C. and 550° C. for 3 minutes further decreased the RMS roughness to 1.7 Å. The quality of the MoSi_x film was preserved even after a 900° C. spike anneal in an H₂/N₂ environment which is consistent with high thermal stability.

A depth profiling XPS study revealed that the bulk of the MoSi_x film is close to stoichiometric MoSi₂ (Si:Mo=1.7-1.9) with <10% oxygen and fluorine. The surface of the MoSi_x film after 5 ALD cycles showed a highly Si-deficient MoSi_x surface with Si:Mo ratio of 0.33 and this Si:Mo ratio at the surface is improved to 0.89 by pulsing extra Si₂H₆. The cross-sectional TEM imaging shows that the selectivity is retained on the nanoscale and that MoSi_x can be selectively deposited on Si without substrate consumption.

The MoSi_x film growth rate of about 1.2 nm/cycle enables less than 10 ALD cycles, such as 5 ALD cycles, to be sufficient for utilization of the MoSi_x film as a contact material. Accordingly, process throughput is increased by utilizing the embodiments described herein when compared to conventional ALD processes. It is believed the selective MoSi_x deposition eliminates or substantially reduces reliance on lithography processes for complicated 3D MOSFET structures (e.g FinFETs). The selectivity for Si—H bonds vs SiO—H bonds exceeds 10⁶. Thus, high selectivity is possible on the nanoscale even without the use additional passivation layers. The embodiments described herein also illustrate that ALD of silicide versus metal could readily be switched while retaining selectivity by changing the partial pressure during the ALD pulse of the reductant.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A substrate processing method, comprising: heating a substrate having a silicon containing surface to a first temperature;exposing the substrate to a plasma comprising hydrogen, wherein the plasma comprising hydrogen is formed from one or more precursors selected from the group consisting of NF3, NH3, and H;exposing the substrate to a first dosage of a MoF6 precursor;exposing the substrate to a second dosage of a Si2H6 precursor;sequentially cycling the exposing the substrate to a first dosage and the exposing the substrate to a second dosage; andafter the sequential cycling, exposing the substrate to a third dosage of the Si2H6 precursor.

2. The method of claim 1, further comprising: annealing the substrate after the exposing the substrate to a third dosage at a second temperature of between about 500° C. and about 550° C.

3. The method of claim 1, wherein the first temperature is between about 100° C. and about 150° C.

4. The method of claim 1, wherein the sequential cycling is performed less than 10 times.

5. The method of claim 4, wherein the sequential cycling is performed 5 times.

6. The method of claim 1, wherein a nitrogen purge process utilizing N2 is performed during the sequential cycling.

7. The method of claim 1, wherein the first dosage is performed for a duration of between about 10 ms and about 100 ms.

8. The method of claim 7, wherein the first dosage comprises a MoF6 flow rate of between about 1 MegaL and about 10 MegaL.

9. The method of claim 7, wherein the second dosage is performed for a duration of between about 1 ms and about 50 ms.

10. The method of claim 9, wherein the second dosage comprises a Si−2H6 flow rate of between about 1 MegaL and about 10 MegaL.

11. The method of claim 10, wherein the third dosage comprises a Si2H6 flow rate of between about 20 MegaL and about 50 MegaL.

12. The method of claim 11, wherein the third dosage comprises between about 3 pulses and about 10 pulses of Si2H6.

13. The method of claim 1, further comprising: selectively depositing a MoSix film on the silicon containing surface at a growth rate of about 1.2 nm per sequential cycle.

14. A substrate processing method, comprising: positioning a substrate on a heater in a reaction chamber having chamber walls;heating the substrate on the heater to a first temperature;maintaining the chamber walls at a second temperature less than the first temperature;exposing a silicon containing surface of the substrate to hydrogen, wherein the exposing a silicon containing surface of the substrate comprises exposing the silicon containing surface to either of a plasma formed from NF3/H2 gases or a plasma formed from NF3/NH3 gases;exposing the substrate to a first dosage of a MoF6 precursor;exposing the substrate to a second dosage of a Si2H6 precursor;sequentially cycling the exposing the substrate to a first dosage and the exposing the substrate to a second dosage; andafter the sequential cycling, exposing the substrate to a third dosage of the Si2H6 precursor.

15. The method of claim 14, wherein the first temperature is between about 100° C. and about 150° C. and the second temperature is between about 65° C. and about 85° C.

16. The method of claim 14, wherein the first dosage comprises a MoF6 flow rate of between about 1 MegaL and about 10 MegaL, the second dosage comprises a Si2H6 flow rate of between about 1 MegaL and about 10 MegaL, and the third dosage comprises a Si2H6 flow rate of between about 20 MegaL and about 50 MegaL.

17. The method of claim 14, further comprising: selectively depositing a MoSix film comprising MoSi2 on the silicon containing surface at a growth rate of about 1.2 nm per sequential cycle.

18. A substrate processing method, comprising: heating a substrate to a first temperature;exposing a silicon containing surface of the substrate to a hydrogen containing plasma, the hydrogen containing plasma formed from one or more of an NF3 precursor, and NH3 precursor, and a precursor consisting of H;exposing the substrate to a first dosage of a MoF6 precursor; exposing the substrate to a second dosage of a Si2H6 precursor; sequentially cycling the exposing the substrate to a first dosage and the exposing the substrate to a second dosage;after the sequential cycling, exposing the substrate to a third dosage of the Si2H6 precursor; andannealing the substrate after the exposing the substrate to a third dosage at a second temperature of between about 500° C. and about 550° C.