Number | Date | Country | Kind |
---|---|---|---|
63-234317 | Sep 1988 | JPX |
This application is a continuation of application Ser. No. 07/406,591, filed Sep. 13, 1989, now abandoned.
Number | Name | Date | Kind |
---|---|---|---|
4141765 | Druminski | Feb 1979 | |
4438728 | Cannella et al. | Mar 1984 | |
4497683 | Celler et al. | Feb 1985 | |
4703554 | Havemann | Nov 1987 | |
4707457 | Erb | Nov 1987 | |
4722908 | Burton | Feb 1988 | |
4749441 | Christenson et al. | Jun 1988 | |
4754313 | Takemae et al. | Jun 1988 | |
4772570 | Kanai et al. | Sep 1988 | |
4786615 | Liaw et al. | Nov 1988 | |
4824799 | Komatsu | Apr 1989 | |
4882299 | Freeman et al. | Nov 1989 | |
5021357 | Taguchi et al. | Jun 1991 |
Number | Date | Country |
---|---|---|
0145577 | Dec 1978 | JPX |
60-126814 | Nov 1985 | JPX |
0063013 | Apr 1986 | JPX |
0063015 | Apr 1986 | JPX |
60-234312 | Apr 1986 | JPX |
61-63015 | Aug 1986 | JPX |
0021210 | Jan 1987 | JPX |
62-37960 | Feb 1987 | JPX |
0038252 | Feb 1988 | JPX |
1-149452 | Jun 1989 | JPX |
Entry |
---|
Crabbe et al., Mat. Res. Soc. Symp. Proc., vol. 106, Materials Research Society (1988), pp. 247-252. |
Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, pp. 713-714, Tokyo, Japan; L. Karapiperis et al., "Selective Epitaxial Growth of Si and in Situ Deposition of Amorphous- or Poly-Si for Recrystallization Purposes". |
Extended Abstracts/Electrochemical Society, vol. 87-2, 1987, abstract 1086, pp. 1512-1513, Princeton, N.J., U.S.; A. S. Yue et al., "Growth Mechanism of Episilicon Film on SiO.sub.2 Surface". |
Number | Date | Country | |
---|---|---|---|
Parent | 406591 | Sep 1989 |