Patent Application
20100084709
The present invention relates to an MISFET having a stacked structure of semiconductor/insulating film/metal, and more specifically it relates to a semiconductor device in which an MISFET is formed on a substrate having an SOI (Silicon on Insulator) structure and a method for manufacturing the same.
Recently, as high integration and high performance of LSIs have progressed, miniaturization of MISFET (Metal/Insulator/Semiconductor Field Effect Transistor) is advanced and its gate length is scaled, so that a problem of the short-channel effect which lowers a threshold voltage Vth has become significant. The short-channel effect is caused by the fact that a spread of a depletion layer in source and drain portions of the MISFET influences a channel portion according to miniaturization of the channel length. Increasing impurity concentration in the channel portion to suppress the spread of the depletion layer in the source and drain portions is one of methods for suppressing the influence. But if the impurity concentration in the channel portion is increased, degradation of drive current becomes problematic depending on carrier mobility resulting from increase of impurity scattering. Further, if the impurity concentration is increased, parasitic capacitances among the substrate, the source, and the drain are increased and thus fast operation of the MISFET is hampered.
Further, conventionally, the threshold voltage Vth of the MISFET is controlled by the impurity concentration of a channel region. Impurity concentration control of channel is relatively well performed up to an LSI of the design rule of about 100 nm node by using an ion implantation technique and a short heat treatment technique.
As to an MISFET of the design rule of 100 nm node or subsequent thereto, however, since an absolute number of impurities contributing to the threshold voltage Vth of MISFET per one is reduced along with the channel length shortened by the method of controlling the threshold voltage Vth by an impurity amount in the channel, variation of the threshold voltage Vth caused by statistical fluctuation cannot be ignored (for example, see Non-Patent Document 1). Therefore, it has been longed to make it possible to control the threshold value Vth of the MISFET according to a work function of a gate electrode as well by the impurity concentration control of a channel portion and another method as a miniaturized device-matching process.
In order to solve such a problem, in recent years, SOI structure has attracted attentions. In this structure, complete device isolation is made by an insulating film (for example, silicon oxide film), and so soft error and latch up are suppressed, so that high reliability is gained even in a highly-integrated LSI, and moreover, since junction capacitance of a diffusion layer is reduced, charge and discharge resulting from switching are reduced and so it is advantageous for achieving high speed and low power consumption.
The SOI type MISFETs are roughly classified to two operation modes. One of these is a Full Depletion SOI in which a depletion layer induced in a body region beneath a gate electrode reaches a bottom surface of the body region, namely, an interfacial surface between the body region and an buried oxide film, and the other is a Partial Depletion SOI in which the depletion layer does not reach the bottom surface of the body region and there remains a neutral region.
In the full depletion type SOI-MISFET, since the thickness of the depletion layer just below the gate is limited by the buried oxide film, a depletion charge amount is considerably reduced as compared to the partial depletion SOI-MISFET, and instead, mobile charges contributing to a drain current are increased. As a result, there is an advantage that a steep sub-threshold characteristic (S characteristic) can be obtained.
In other words, when a steep S characteristic is obtained, the threshold voltage Vth can be lowered while suppressing off-leakage current. As a result, a drain current is secured even at a low operating voltage, so that it becomes possible to manufacture a MISFET with extremely low power consumption such as a MISFET operating at 1V or lower (the threshold voltage Vth is also 0.3 V or lower).
Further, generally, in a case of a MISFET manufactured on a substrate, there is the abovementioned problem of short-channel effect. Meanwhile, in a case of the full depletion type SOI-MISFET, since the substrate and the device are isolated from each other by an oxide film and the depletion layer will not spread, a substrate concentration can be lowered in the full depletion type SOI-MISFET. Therefore, since lowering of carrier mobility along with increase of impurity scattering is suppressed, high drive current can be achieved. Further, as compared to the method of controlling the threshold voltage Vth by impurity concentration, variation of the threshold voltage Vth caused by statistical fluctuation of the number of impurities with respect to one MISFET can be reduced.
On the other hand, a double-gate MISFET structure has been known as another conventional technique relating to the SOI-MISFET, which has been proposed in Patent Document 1, for example. In the above SOI-MISFET, after a source diffusion layer and a drain diffusion layer are formed in an SOI layer according to self-alignment with a dummy gate electrode, formation of a reverse pattern groove of the dummy gate electrode and formation of a buried gate according to ion implantation of impurities from the groove to a supporting substrate are performed sequentially, thereafter, a metal film such as W (tungsten) is selectively buried in the groove region, thereby an upper gate electrode is made. Realization of the double-gate structure is potential means as means for improving SOI-MISFET performance, but in the double-gate MISFET structure based on presently well-known means, it is extremely difficult to form a high-concentration diffusion layer or the like in a buried manner in the supporting substrate without adversely affecting the SOI layer, and thus the double-gate MISFET structure has not reached practical use yet. When difficulty in manufacture is ignored and an essential concept of the double-gate MISFET structure is taken into account, it is a premise that a buried gate and an upper gate are aligned accurately, and it is necessarily required to arrange the buried gate for each individual device. Such a concept of sharing the role of the buried gate electrode by a plurality of MISFETs does not basically exist. Alignment error of the buried gate is fatal in an ultrafine SOI-MISFET and directly leads to variation of parasitic capacitance and variation of drive current. Therefore, even if the parasitic capacitor is effectively utilized for stabilization of a dynamic operation, utilization of the parasitic capacitor for stabilization is also irrealizable unless capacitance variation is suppressed essentially. Further, since the threshold voltage of the double-gate structure SOI-MISFET is determined only by a work function of each material for the upper gate and the buried gate except for a component of SOI layer film thickness, it is substantially impossible to set a threshold voltage value for each desired MISFET. It is a premise that a connection between the buried gate electrode and the upper gate electrode is made outside an MISFET active region, namely, in a device isolation region, and consistency with a consideration of peripheral device layout is essential.
Herein, in the above full depletion type SOI-MISFET manufactured by using an SOI substrate with a buried insulating film having a thickness of 50 nm or less, more preferably 10 nm or less, and a thin single crystal semiconductor thin film having a thickness of 20 nm or less, by applying a gate potential to a well diffusion layer just below the SOI-MISFET, a conduction state of the SOI-MISFET is further accelerated due to a high-potential application of a well potential via the thin buried insulating film, which causes significant increase of drive current, namely, achieves high current. When the gate potential is applied as a low potential, the well potential is lowered in a following manner, so that a non-conduction state can be achieved faster. That is, a characteristic of further increasing drive current under the same condition of leakage current can be realized in the above operation mode, so that it becomes possible to perform switching between conduction and non-conduction at a higher speed. Isolation for insulation on sidewalls of a well diffusion layer contributes to reduction of a parasitic capacitance, namely, reduction of a delay time constant of an application signal. Further, the thinner the buried insulating film is, the more effective for improvement of an increase effect of the drive current, and ideally, a film thickness condition equivalent to that of the gate insulating film of the SOI-MISFET is preferable. As described above, by applying the thin buried insulating film to the SOI-MISFET, a characteristic of essential performance improvement of the SOI-MISFET according to the double-gate structure can be utilized. Further, since the well diffusion layer just below the SOI-MISFET is formed in a self-aligned manner under the gate electrode, the problems of drive current variation and parasitic capacitance variation caused by an alignment error of the buried gate electrode, which are problematic in a conventional double-gate MISFET structure, can be essentially removed.
As described above, the SOI-type MISFET has such an excellent feature as low power consumption and high speed.
Patent Document 1: Japanese Patent Application Laid-Open Publication No. 2000-208770
Non-Patent Document 1: T. Mizuno et al. “Performance Fluctuations of 0.10 μm MOSFETs—Limitation of 0.10μ ULSIs”, Symp. On VLSI Technology 1994
Non-Patent Document 2: T. Yamada et al. “An Embedded DRAM Technology on SOI/Bulk Hybrid Substrate Formed with SEG Process for High-End SOC Application” Symp. On VLSI Technology 2002
Meanwhile, the above-said SOI-type MISFET has the following problems. Generally, an MISFET manufactured on an SOI substrate can be used only in a low voltage region, since a source-drain withstand voltage is deteriorated. It is difficult to form a device of a high withstand voltage system, an ESD protection device for preventing ESD breakdown (electrostatic breakdown), and the like on the SOI substrate. Therefore, in a region used at a high withstand voltage, not an SOI substrate but a bulk substrate is used. In this manner, when a bulk silicon substrate and an SOI substrate are used, two substrates are required, so that a board area cannot be made small, and therefore the whole semiconductor device cannot be made small. Moreover, when an SOI-type MISFET and a bulk-type MISFET are tried to be manufactured on the same substrate, selective epitaxial growth technique is required, and it is required to manufacture an SOI-type MISFET and a bulk-type MISFET in different steps, for example as shown in Non-Patent Document 2, which results in such a problem that the process becomes complex.
The present invention has been made in view of the above conventional problems, and an object thereof is to provide a semiconductor device the whole of which can be reduced in size even if the semiconductor device is a semiconductor device in which both an SOI-type MISFET used as a lower voltage region and a bulk-type MISFET used as a high voltage region are present, and which can be manufactured without a complicating process, and a method for manufacturing the same.
In an example of a typical one of the present inventions, it is premised that an SOI substrate formed of a single crystal semiconductor substrate and a thin single crystal semiconductor thin film (SOI layer) separated from the single crystal semiconductor by a thin buried insulating film is used. Premising an application to an ultrafine full depletion SOIMISFET, where the gate length thereof is 100 nm or less, more preferably 50 nm or less, a thickness of the buried insulating film is 10 nm or less and a thickness of the thin single crystal semiconductor thin film is 20 nm or less, and preferably an SOI substrate having a thickness of about 10 nm is used.
More specifically, in a semiconductor device having a sheet of substrate, the substrate includes a first device formation region and a second device formation region. Moreover, in the first device formation region, a first semiconductor substrate portion of a first conductive type, a semiconductor layer formed above the first semiconductor substrate portion via an insulating layer, a first source region and a first drain region of a second conductive type formed in the semiconductor layer, a first channel region formed between the first source region and the first drain region, a first gate insulating film formed on the first channel region, and a first gate electrode formed above the first channel region via the first gate insulating film are formed. Further, in the second device formation region, a second semiconductor substrate portion of the first conductive type, a second source region and a second drain region formed in the second semiconductor substrate portion, a second channel region formed between the second source region and the second drain region, a second gate insulating film formed on the second channel region, and a second gate electrode formed above the second channel region via the second gate insulating film are formed. Moreover, a thickness of the insulating layer is 20 nm or less, and a thickness of the semiconductor layer is 20 nm or less. Herein, the insulating layer corresponds to a thin buried insulating film, the semiconductor layer corresponds to a thin single crystal semiconductor thin film, and a step generated between the first device formation region and the second device formation region is as small as 30 nm or less. Therefore, the first and second source regions, the first and second drain regions, the first and second gate insulating film, and the first and second gate electrodes can be respectively formed at the same step. In other words, it becomes possible to make processes to form the SOI-MOSFET on the first device formation region and the bulk-MOSFET on the second device formation region simultaneously with a common process, without forming them in different steps, respectively.
According to the invention according to the above-described means, since the device of a high withstand voltage system and the ESD protection device for preventing ESD breakdown (electrostatic breakdown) are formed as a bulk-MISFET on the same substrate, the board area can be made smaller as compared to a case where an SOI-type MISFET which is excellent in low power consumption and high speed and a bulk-type MISFET are formed on different substrates and are connected with each other. Moreover, steps for manufacturing the SOI-type MISFET and the bulk-type MISFET are made common, so that manufacture of both the devices can be realized without complicating the process.
In the following embodiments, explanation will be given separately in a plurality of sections or embodiments when needed for the sake of convenience. However, unless otherwise stated, they are not irrelevant to each other, but are in the relation that one of them is a modification example, detail, supplemental explanation and so on of a part or the entirety of the other part.
Moreover, in the following embodiments, when the numbers of elements and the like (including the number of the items, numerical value, amount, range, etc.) are mentioned, they are not limited to the particular numbers unless otherwise stated and it is obviously limited to particular numbers in principle. The number larger or smaller than the specified number is also applicable.
Further, in the following embodiments, components (including composing steps) are not always indispensable unless particularly stated and apparently indispensable in principle.
Similarly, in the following embodiments, shapes and positions of components include substantially approximate or similar ones unless otherwise stated and deemed to be apparently against the principle.
Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Materials, conductive types, and manufacturing conditions of the respective parts are not limited to the description of the embodiments and it is needless to say that various modifications can be made respectively.
On the above SOI substrate, a silicon oxide film 36 is formed having a thickness of 10 nm, a resist mask 35 is applied thereon thereafter, and the resist mask is removed only in a region 200 where a bulk-type MISFET should be formed (
Thereafter, the resist mask 35 is removed (
From the state of
From the state of
In
Subsequently, diffusion layer regions for threshold voltage control 25 and 26 in the N-type and P-type SOI-type MISFET formation regions are formed by ion implantation via the thin silicon oxide film 36, the thin single crystal Si film 3, and the thin buried insulating film 4. Thereafter, by ion implantation in the N-type and P-type bulk-type MISFET formation regions via the thin silicon oxide film 36, the N-conductive type and P-conductive type diffusion layer regions for threshold voltage control 27 and 28 are selectively formed in a desired region of the supporting substrate 1 (
Subsequently, after the silicon oxide film 36 and the like are selectively removed by hydrofluoric acid cleaning and the like to expose the surface of the single crystal Si thin film 3, a thermal oxide film with a thickness of 1.8 nm is formed and a nitride film with a thickness of 0.2 nm is formed by deposition on the main surface by nitriding a surface of the thermal oxide film by NO gas, so that a gate insulating film 5 is formed. Subsequently, a polycrystalline Si film 38 having a thickness of, for example, 100 nm is deposited on the gate insulating film 5 by chemical vapor deposition method. Next, after a gate protective film mainly formed of the silicon nitride film 37 is deposited on the entire of the polycrystalline Si film 38, formation of a gate electrode and a gate protective film is performed by patterning according to a conventionally well-known method for manufacturing an MISFET (
Subsequently, from
Subsequently, in
In
Next, from
In this state, Si films 52 and 53 having a thickness of, for example, 60 nm are selectively deposited on the single crystal Si regions exposed by using selective epitaxial method. By this step, single crystal Si is selectively grown epitaxially to the 52 on the source and drain diffusion layer regions, and, in the SOI-type MISFET, to the 53 on the contact formation region of the gate and well (
From the state in
From this state, deposition and planarization polishing of a wiring interlayer insulating film, a wiring step including an wiring interlayer insulating film 31 and the like are performed, and a semiconductor device is manufactured through further second wiring step (
In the semiconductor device according to the present embodiment, the gate electrode 20 is made of a metal silicide film. In this manner, in the semiconductor device according to the present embodiment, despite it is a full depletion type SOIIGFET, a threshold voltage value can be set to about 0 V in both the N-conductive type MISFET and the P-conductive type MISFET. Further, in spite of the fact that the single crystal Si thin film 3 constituting a channel is finally made as ultra-thin as 10 nm, since the source and drain regions are configured as a stacked structure and further a major part of the stacked structure can be made of the metal silicide film 20, such a problem of increase of contact resistance between the semiconductor and the metal silicide film and increase of serial resistance is solved. Moreover, in the semiconductor device according to the present embodiment, the ion implantation step for reducing parasitic capacitance of the source and drain diffusion layer regions of the SOI-type MISFET region and the ion implantation step for achieving lower resistance of the source and drain diffusion layer regions of the bulk-type MISFET region are formed in a common step under the same condition, so that high drive current of the SOI-type MISFET can be realized and reduction of a bottom parasitic capacitance of the well diffusion layers 6 and 7 can be realized simultaneously. In this manner, as compared to the well structure in a case where ion implantation for capacitance reduction is not performed, the parasitic capacitance can be reduced by about 1 digit even in the same occupied area configuration of well. Further, in the semiconductor device according to the present embodiment, since the gate electrode which is a lowermost layer wiring can be directly connected with the well diffusion layer, it is possible to set the connection region regardless of the upper wirings. In this manner, since the connection made by the upper wiring in a margin region taking into account the layout of the lower-layer wiring as having been done in a conventionally well-known structure is not required, high current and high drive performance of the semiconductor device can be realized without increase of the occupied area. The feature of the embodiment that increase of the occupied area is not required gains an effect also on further reduction of the parasitic capacitance. Therefore, since there is a wide variety of circuits to which the semiconductor device according to the present embodiment is applicable, it is most effective to apply the semiconductor device to a memory cell of an SRAM, an I/O buffer circuit as described below, and further a drive region of a critical path which defines an operation speed of an integrated circuit and the like.
In the semiconductor device according to the present embodiment, even in a case where these high-performance SOI type MISFET 100 and a high-withstand-voltage system device, and the bulk-type MISFET 200 for ESD protection for preventing ESD breakdown (electrostatic breakdown) are formed on the same substrate, by making manufacturing steps of the SOI-type MISFET and the bulk-type MISFET common, the whole semiconductor device can be scaled down and further the semiconductor can be manufactured without complicating the process. Further, in the semiconductor device according to the present embodiment, it is preferable to make the thin buried insulating film 4 as thin as possible within a range of a film thickness allowing to ignore leakage current and it is preferable to make the thin buried insulating film 4 have a film thickness of 10 nm or less, more preferably, about 2 nm which is similar to the gate insulating film 5.
In the semiconductor device according to the present embodiment, the gate insulating material is not limited to an Ni silicide film, and any material can be used as long as it has a work function positioned nearly in the center of the forbidden band of the single crystal Si thin film among a metal, a metal silicide film, or a metal nitride film of such as Ni, Co, Ti, W, Ta, Mo, Cr, Al, Pt, Pa and Ru.
Next, a semiconductor device according to a second embodiment of the present invention will be described. In the present embodiment, though the semiconductor device is manufactured according to the first embodiment, it has a different layout the second embodiment and has been invented to be capable of forming a bulk-type MISFET more stably. In the present embodiment, the layout at the step of removing the resist mask is different only in the region 200 in
The dummy pattern 60 formed in the present embodiment is a pattern provided for suppressing dishing generated in the chemical-mechanical polishing step for forming the device isolation region in the step of
Further, in the semiconductor device according to the present embodiment, the gate electrode 20 is made of a metal silicide film. Therefore, in the semiconductor device according to the present embodiment, the threshold voltage value can be set to about 0 V in both the N-conductive type MISFET and the P-conductive type MISFET despite the full depletion type SOIIGFET. Further, in spite of the fact that the single crystal Si thin film 3 constituting the channel is finally formed to be as ultra-thin as 10 nm, since the source and drain regions are configured as a stacked structure, and further, most of the stacked structure can be made of a metal silicide film, such a problem as increase of contact resistance between the semiconductor and the metal silicide film and increase of serial resistance can be eliminated. Moreover, in the semiconductor device according to the present embodiment, by performing the ion implantation step for parasitic capacitance reduction of the source and drain diffusion layer regions of the SOI-type MISFET region and the ion implantation step for achieving lower resistance of the source and drain diffusion layer regions of the bulk-type MISFET region in a common step under the same condition, high drive current of the SOI-type MISFET can be realized and simultaneously reduction of bottom parasitic capacitance of the well diffusion layers 6 and 7 can be realized. In this manner, as compared to the well structure in a case where ion implantation for capacitance reduction is not performed, the parasitic capacitance can be reduced by about 1 digit even in the same occupied area configuration of well. Further, in the semiconductor device according to the present embodiment, since the gate electrode which is a lowermost layer wiring can be directly connected with the well diffusion layer, it is possible to set the connection region regardless of the upper wirings. In this manner, since the connection made by the upper wiring in a margin region taking into account the layout of the lower-layer wiring as having been done in a conventionally well-known structure is not required, high current and high drive performance of the semiconductor device can be realized without increase of the occupied area. The feature of the embodiment that increase of the occupied area is not required gains an effect also on further reduction of the parasitic capacitance. Therefore, since there is a wide variety of circuits to which the semiconductor device according to the present embodiment is applicable, it is most effective to apply the semiconductor device to a memory cell of an SRAM, an I/O buffer circuit as described below, and further a drive region of a critical path which defines an operation speed of an integrated circuit and the like.
045 In the semiconductor device according to the present embodiment, even in a case where these high-performance SOI type MISFET 100 and a high-withstand-voltage system device, and the bulk-type MISFET 200 for ESD protection for preventing ESD breakdown (electrostatic breakdown) are formed on the same substrate, by making manufacturing steps of the SOI-type MISFET and the bulk-type MISFET common, the whole semiconductor device can be scaled down and further the semiconductor can be manufactured without complicating the process. Further, in the semiconductor device according to the present embodiment, it is preferable to make the thin buried insulating film 4 as thin as possible within a range of a film thickness allowing to ignore leakage current and it is preferable to make the thin buried insulating film 4 have a film thickness of 10 nm or less, more preferably, about 2 nm which is similar to the gate insulating film 5.
046 In the semiconductor device according to the present embodiment, the gate insulating material is not limited to an Ni silicide film, and any material can be used as long as it has a work function positioned nearly in the center of the forbidden band of the single crystal Si thin film among a metal, a metal silicide film, or a metal nitride film of such as Ni, Co, Ti, W, Ta, Mo, Cr, Al, Pt, Pa and Ru.
In the present embodiment, since the ultra-shallow N-conductive type high-concentration source diffusion layer 8, the ultra-shallow N-conductive type high concentration drain diffusion layer 9, and the ultra-shallow P-conductive type high concentration source diffusion layer 10 and the ultra-shallow P-conductive type high concentration drain diffusion layer 11 are formed while the offset spacer 17 is used as a mask, horizontal spread of the diffusion layer regions toward the channel region 3 can be suppressed, and so an overlapping region of the gate electrode 20 and the ultra-shallow high-concentration source and drain diffusion layers is small, so that an effective channel length can be secured. This allows the MISFET to be further miniaturized as compared to the first embodiment. Further, since an overlapping capacitor between the gate electrode 20 and the ultra-shallow high concentration source and drain diffusion layers can be kept small, the parasitic capacitance is reduced, so that higher speed of the MISFET can be achieved as compared to the first embodiment.
Further, in the semiconductor device according to the present embodiment, the gate electrode 20 is made of a metal silicide film. In this manner, in the semiconductor device according to the present embodiment, despite it is a full depletion type SOIIGFET, a threshold voltage value can be set to about 0 V in both the N-conductive type MISFET and the P-conductive type MISFET. Further, in spite of the fact that the single crystal Si thin film 3 constituting a channel is finally made as ultra-thin as 10 nm, since the source and drain regions are configured as a stacked structure and further a major part of the stacked structure can be made of the metal silicide film 20, such a problem of increase of contact resistance between the semiconductor and the metal silicide film and increase of serial resistance is solved. Moreover, in the semiconductor device according to the present embodiment, the ion implantation step for reducing parasitic capacitance of the source and drain diffusion layer regions of the SOI-type MISFET region and the ion implantation step for achieving lower resistance of the source and drain diffusion layer regions of the bulk-type MISFET region are formed in a common step under the same condition, so that high drive current of the SOI-type MISFET can be realized and reduction of a bottom parasitic capacitance of the well diffusion layers 6 and 7 can be realized simultaneously. In this manner, as compared to the well structure in a case where ion implantation for capacitance reduction is not performed, the parasitic capacitance can be reduced by about 1 digit even in the same occupied area configuration of well. Further, in the semiconductor device according to the present embodiment, since the gate electrode which is a lowermost layer wiring can be directly connected with the well diffusion layer, it is possible to set the connection region regardless of the upper wirings. In this manner, since the connection made by the upper wiring in a margin region taking into account the layout of the lower-layer wiring as having been done in a conventionally well-known structure is not required, high current and high drive performance of the semiconductor device can be realized without increase of the occupied area. The feature of the embodiment that increase of the occupied area is not required gains an effect also on further reduction of the parasitic capacitance. Therefore, since there is a wide variety of circuits to which the semiconductor device according to the present embodiment is applicable, it is most effective to apply the semiconductor device to a memory cell of an SRAM, an I/O buffer circuit as described below, and further a drive region of a critical path which defines an operation speed of an integrated circuit and the like.
In the semiconductor device according to the present embodiment, even in a case where these high-performance SOI type MISFET 100 and a high-withstand-voltage system device, and the bulk-type MISFET 200 for ESD protection for preventing ESD breakdown (electrostatic breakdown) are formed on the same substrate, by making manufacturing steps of the SOI-type MISFET and the bulk-type MISFET common, the whole semiconductor device can be scaled down and further the semiconductor can be manufactured without complicating the process. Further, in the semiconductor device according to the present embodiment, it is preferable to make the thin buried insulating film 4 as thin as possible within a range of a film thickness allowing to ignore leakage current and it is preferable to make the thin buried insulating film 4 have a film thickness of 10 nm or less, more preferably, about 2 nm which is similar to the gate insulating film 5.
In the semiconductor device according to the present embodiment, the gate insulating material is not limited to an Ni silicide film, and any material can be used as long as it has a work function positioned nearly in the center of the forbidden band of the single crystal Si thin film among a metal, a metal silicide film, or a metal nitride film of such as Ni, Co, Ti, W, Ta, Mo, Cr, Al, Pt, Pa and Ru.
Further, in the semiconductor device according to the present embodiment, the gate electrode 20 is made of a metal silicide film. In this manner, in the semiconductor device according to the present embodiment, despite it is a full depletion type SOIIGFET, a threshold voltage value can be set to about 0 V in both the N-conductive type MISFET and the P-conductive type MISFET. Further, in spite of the fact that the single crystal Si thin film 3 constituting a channel is finally made as ultra-thin as 10 nm, since the source and drain regions are configured as a stacked structure and further a major part of the stacked structure can be made of the metal silicide film 20, such a problem of increase of contact resistance between the semiconductor and the metal silicide film and increase of serial resistance is solved. Moreover, in the semiconductor device according to the present embodiment, the ion implantation step for reducing parasitic capacitance of the source and drain diffusion layer regions of the SOI-type MISFET region and the ion implantation step for achieving lower resistance of the source and drain diffusion layer regions of the bulk-type MISFET region are formed in a common step under the same condition, so that high drive current of the SOI-type MISFET can be realized and reduction of a bottom parasitic capacitance of the well diffusion layers 6 and 7 can be realized simultaneously. In this manner, as compared to the well structure in a case where ion implantation for capacitance reduction is not performed, the parasitic capacitance can be reduced by about 1 digit even in the same occupied area configuration of well. Further, in the semiconductor device according to the present embodiment, since the gate electrode which is a lowermost layer wiring can be directly connected with the well diffusion layer, it is possible to set the connection region regardless of the upper wirings. In this manner, since the connection made by the upper wiring in a margin region taking into account the layout of the lower-layer wiring as having been done in a conventionally well-known structure is not required, high current and high drive performance of the semiconductor device can be realized without increase of the occupied area. The feature of the embodiment that increase of the occupied area is not required gains an effect also on further reduction of the parasitic capacitance. Therefore, since there is a wide variety of circuits to which the semiconductor device according to the present embodiment is applicable, it is most effective to apply the semiconductor device to a memory cell of an SRAM, an I/O buffer circuit, and further a drive region of a critical path which defines an operation speed of an integrated circuit and the like.
In the semiconductor device according to the present embodiment, even in a case where these high-performance SOI type MISFET 100 and a high-withstand-voltage system device, and the bulk-type MISFET 200 for ESD protection for preventing ESD breakdown (electrostatic breakdown) are formed on the same substrate, by making manufacturing steps of the SOI-type MISFET and the bulk-type MISFET common, the whole semiconductor device can be scaled down and further the semiconductor can be manufactured without complicating the process. Further, in the semiconductor device according to the present embodiment, it is preferable to make the thin buried insulating film 4 as thin as possible within a range of a film thickness allowing to ignore leakage current and it is preferable to make the thin buried insulating film 4 have a film thickness of 10 nm or less, more preferably, about 2 nm which is similar to the gate insulating film 5.
In the semiconductor device according to the present embodiment, the gate insulating material is not limited to an Ni silicide film, and any material can be used as long as it has a work function positioned nearly in the center of the forbidden band of the single crystal Si thin film among a metal, a metal silicide film, or a metal nitride film of such as Ni, Co, Ti, W, Ta, Mo, Cr, Al, Pt, Pa and Ru.
In this manner, by applying the present embodiment, a method for manufacturing a semiconductor device of a good-quality product with good yield can be provided.
Further, in the semiconductor device according to the present embodiment, the gate electrode 20 is made of a metal silicide film. In this manner, in the semiconductor device according to the present embodiment, despite it is a full depletion type SOIIGFET, a threshold voltage value can be set to about 0 V in both the N-conductive type MISFET and the P-conductive type MISFET. Further, in spite of the fact that the single crystal Si thin film 3 constituting a channel is finally made as ultra-thin as 10 nm, since the source and drain regions are configured as a stacked structure and further a major part of the stacked structure can be made of the metal silicide film 20, such a problem of increase of contact resistance between the semiconductor and the metal silicide film and increase of serial resistance is solved. Moreover, in the semiconductor device according to the present embodiment, the ion implantation step for reducing parasitic capacitance of the source and drain diffusion layer regions of the SOI-type MISFET region and the ion implantation step for achieving lower resistance of the source and drain diffusion layer regions of the bulk-type MISFET region are formed in a common step under the same condition, so that high drive current of the SOI-type MISFET can be realized and reduction of a bottom parasitic capacitance of the well diffusion layers 6 and 7 can be realized simultaneously. In this manner, as compared to the well structure in a case where ion implantation for capacitance reduction is not performed, the parasitic capacitance can be reduced by about 1 digit even in the same occupied area configuration of well. Further, in the semiconductor device according to the present embodiment, since the gate electrode which is a lowermost layer wiring can be directly connected with the well diffusion layer, it is possible to set the connection region regardless of the upper wirings. In this manner, since the connection made by the upper wiring in a margin region taking into account the layout of the lower-layer wiring as having been done in a conventionally well-known structure is not required, high current and high drive performance of the semiconductor device can be realized without increase of the occupied area. The feature of the embodiment that increase of the occupied area is not required gains an effect also on further reduction of the parasitic capacitance. Therefore, since there is a wide variety of circuits to which the semiconductor device according to the present embodiment is applicable, it is most effective to apply the semiconductor device to a memory cell of an SRAM, an I/O buffer circuit, and further a drive region of a critical path which defines an operation speed of an integrated circuit and the like.
In the semiconductor device according to the present embodiment, even in a case where these high-performance SOI type MISFET 100 and a high-withstand-voltage system device, and the bulk-type MISFET 200 for ESD protection for preventing ESD breakdown (electrostatic breakdown) are formed on the same substrate, by making manufacturing steps of the SOI-type MISFET and the bulk-type MISFET common, the whole semiconductor device can be scaled down and further the semiconductor can be manufactured without complicating the process. Further, in the semiconductor device according to the present embodiment, it is preferable to make the thin buried insulating film 4 as thin as possible within a range of a film thickness allowing to ignore leakage current and it is preferable to make the thin buried insulating film 4 have a film thickness of 10 nm or less, more preferably, about 2 nm which is similar to the gate insulating film 5.
In the semiconductor device according to the present embodiment, the gate insulating material is not limited to an Ni silicide film, and any material can be used as long as it has a work function positioned nearly in the center of the forbidden band of the single crystal Si thin film among a metal, a metal silicide film, or a metal nitride film of such as Ni, Co, Ti, W, Ta, Mo, Cr, Al, Pt, Pa and Ru.
The present invention relates to an MISFET having a stacked structure of semiconductor/insulating film/metal, and more specifically, it is applicable to a semiconductor device in which an MISFET is formed on a substrate having an SOI structure and a manufacturing industry of manufacturing the same.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2005-195748 | Jul 2005 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2006/313060 | 6/30/2006 | WO | 00 | 12/23/2007 |
