BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 shows the semiconductor memory device according to the first embodiment;
FIG. 2 shows the first stage (1/8) of the method for manufacturing the semiconductor memory device according to the first embodiment;
FIG. 3 shows the second stage (2/8) of the method for manufacturing the semiconductor memory device according to the first embodiment;
FIG. 4 shows the third stage (3/8) of the method for manufacturing the semiconductor memory device according to the first embodiment;
FIG. 5 shows the fourth stage (4/8) of the method for manufacturing the semiconductor memory device according to the first embodiment;
FIG. 6 shows the fifth stage (5/8) of the method for manufacturing the semiconductor memory device according to the first embodiment;
FIG. 7 shows the sixth stage (6/8) of the method for manufacturing the semiconductor memory device according to the first embodiment;
FIG. 8 shows the seventh stage (7/8) of the method for manufacturing the semiconductor memory device according to the first embodiment;
FIG. 9 shows the eighth stage (8/8) of the method for manufacturing the semiconductor memory device according to the first embodiment;
FIG. 10 shows the semiconductor memory device according to the second embodiment;
FIG. 11 shows the first stage (1/9) of the method for manufacturing the semiconductor memory device according to the second embodiment;
FIG. 12 shows the second stage (2/9) of the method for manufacturing the semiconductor memory device according to the second embodiment;
FIG. 13 shows the third stage (3/9) of the method for manufacturing the semiconductor memory device according to the second embodiment;
FIG. 14 shows the fourth stage (4/9) of the method for manufacturing the semiconductor memory device according to the second embodiment;
FIG. 15 shows the fifth stage (5/9) of the method for manufacturing the semiconductor memory device according to the second embodiment;
FIG. 16 shows the sixth stage (6/9) of the method for manufacturing the semiconductor memory device according to the second embodiment;
FIG. 17 shows the seventh stage (7/9) of the method for manufacturing the semiconductor memory device according to the second embodiment;
FIG. 18 shows the eighth stage (8/9) of the method for manufacturing the semiconductor memory device according to the second embodiment; and
FIG. 19 shows the ninth stage (9/9) of the method for manufacturing the semiconductor memory device according to the second embodiment.