The present invention relates to semiconductor devices having integrated circuits, i.e., semiconductor elements, mounted on substrates and, in particular, to a method for supplying electric power to a semiconductor device applicable to a driving circuit of a thin-shaped image display device.
In recent years, thin-shaped image display devices have been practically used which are constituted by using thin-shaped image display panels such as liquid crystal display panels, plasma image display panel, EL (electroluminescent) image display panels, etc. as image display elements.
These image display devices contain electric circuits in which heat is generated for example from integrated circuits including output-stage transistors, semiconductors, resistors, and transformers. That is, heat is generated intensively from electronic components with great electric power of electrothermal conversion. Along with high definition or ultra-high definition, a recent image display device has risen in drive frequency at which display signals are supplied to a large number of pixels of the panel. For this reason, in particular, there has been an unignorably large increase in self-heating of an integrated circuit driving the source lines of a display device.
Patent Literature 1 discloses a technique for, in order to reduce the chip size of an integrated circuit, wiring a power supply without drawing inner power wires to power pads surrounding a chip.
The liquid crystal driver has a large number of output cells 101 arranged for driving source lines of liquid crystals. Further, each of the output cells 101 has, as its components, a latch circuit 102, a level shifter 103, a DAC circuit 104, an operational amplifier 105, and a pad 106, for example.
The latch circuit 102 retains data in accordance with which a display is carried out. The level shifter 103 shifts the latched data to a liquid crystal driving power supply level. The DAC circuit 104 outputs a drive voltage corresponding to the data. The operational amplifier 105 makes an impedance conversion of the voltage outputted from the DAC circuit 104 and outputs the voltage. The pad 106 connects the integrated circuit, i.e., the liquid crystal driver, to wires of a package. Each of the output cells 101 has its components linearly arranged as shown in
Since the components of each of the output cells 101 need to be supplied with electric power, the integrated circuit has power pads 108 disposed therearound. In the case of such disposition of the power pads 108, as shown in
The lead wires 109a to 109c shown in
The foregoing configuration can reduce the resistance of the wires to the power supply from the power pads to the operational amplifier section of the output cells, and as such, can quickly absorb switching noise.
Since, as mentioned above, recent improvements in integrity of integrated circuits have invited a decrease in chip size and an increase in the number of outputs in liquid crystal drivers, too, the generation of heat from drivers per se has become an issue. Such heat generation occurs when an electric current passed through a power wire by operating a driver is discharged in the form of heat due to the resistance of the power wire. Such an operating current is large at the time of switching of a transistor. For this reason, completion of the switching is delayed unless the power supply is stable, with the result that a more electric current flows and leads to the generation of heat from the driver.
The configuration of Patent Literature 1 is intended to reduce the number of wires of a semiconductor element and hence reduce the size and weight of a semiconductor device by forming a bypass wire on a film substrate instead of conventionally leading a power wire in the semiconductor element. Further, the bypass wire allows a larger reduction in resistance than a wire formed in the semiconductor element, whereby the power supply is more stabilized.
Moreover, according to the configuration of Patent Literature 1, it has been believed that a reduction in switching noise and hence suppression of heat generation are achieved through stabilization of the power supply. However, such stabilization of the power supply is not sufficient to reduce the generation of heat from an integrated circuit.
The present invention has been made in view of the foregoing problems, and it is an object of the present invention to provide a semiconductor device having an integrated circuit (semiconductor element) mounted on a substrate, wherein the generation of heat in the integrated circuit is suppressed.
In order to solve the foregoing problems, the present invention is directed to a semiconductor device having a semiconductor element mounted on a substrate, the semiconductor element including: a plurality of output cells having plural types of component; and a plurality of power wires through which electric power is supplied to the types of component of all of the output cells, respectively, the substrate including a bypass wire, the bypass wire being connected to at least one of the power wires and having connection terminals for each separate one of those components of substantially all of the output cells which are connected to the at least one of the power wires.
Since, according to the foregoing configuration, the bypass wire is formed on the substrate on which the semiconductor element is mounted, the bypass wire allows a larger reduction in resistance than the power wires formed in the semiconductor element. Moreover, since the bypass wire having connection terminals for each separate one of those components of all of the output cells which are connected to the at least one of the power wires, an electric current that flows when the components of the output cells operate is mostly supplied from the power supply through the bypass wire. This makes it possible to effectively suppress the generation of heat in power wires formed in conventional semiconductor elements. Further, the bypass wire allows efficient heat dissipation because it is greater in width and larger in surface area than the wires on the semiconductor element.
The present invention is directed to a semiconductor device having a semiconductor element mounted on a substrate, the semiconductor element including: a plurality of output cells having plural types of component; and a plurality of power wires through which electric power is supplied to the types of component of all of the output cells, respectively, the substrate including a bypass wire, the bypass wire being connected to at least one of the power wires and having connection terminals for each separate one of those components of substantially all of the output cells which are connected to the at least one of the power wires.
Therefore, an electric current that flows when the components of the output cells operate is mostly supplied from the power supply through the bypass wire. This brings about an effect of making it possible to effectively suppress the generation of heat in power wires formed in conventional semiconductor elements.
Further, the bypass wire allows efficient heat dissipation because it is greater in width and larger in surface area than the wires on the semiconductor element.
An embodiment of the present invention is described in detail below with reference to
The liquid crystal driver has a large number of output cells 101 arranged for driving source lines of liquid crystals. Further, each of the output cells 101 has, as its components, a latch circuit 102, a level shifter 103, a DAC circuit 104, an operational amplifier 105, and a pad 106, for example.
Since the components of each of the output cells 101 need to be supplied with electric power, the integrated circuit has power pads 108 disposed therearound, and wires are led from the output cells 101 to the power pads 108. In
Furthermore, the film package of
In the configuration of the present embodiment, the bumps 203 are provided for each separate one of all of the output cells. That is, in a case where the liquid crystal driver 113 has n output cells, there are provided n bumps 203, too. In other words, the bypass wire 201 has bumps 203 for each separate one of the operational amplifiers 105 of all of the output cells, and is connected to the power wire 109a. This allows the power supply of each output buffer to be connected to the bypass wire 201. However, in the present invention, the bypass wire does not necessarily need to be connected to each separate one of the components of all of the output cells. There may be some output cells that do not have bumps (that is, the bypass wire may be connected to each separate one of the components of substantially all of the output cells).
Although, in the present embodiment, the measures against heat by the bypass wire are taken only for the power wire for the operational amplifiers, such measures can be taken for all of the power wires on the liquid crystal driver. However, this makes it necessary, as shown in
Since, in the case of a liquid crystal driver, the output cells are elongated as described above, the circuitry of each operational amplifier is often constituted by two transistors that are large in transistor size, namely a transistor Q1 and a transistor Q2. In this case, the operational amplifier has its power supply VDD divided into a power supply VDD2 connected to the transistors Q1 and Q2 of the output stage and a power supply VDD1 connected to the other members. In the case of such division, the measures against heat by the bypass wire is effectively taken for the power supply VDD2, which drives the loads of a liquid crystal panel.
Furthermore, examples of results of measurements of devices in which measures were taken against heat as described in the present embodiment are shown below in Table 1. It should be noted that in the results below, Devices A and B are devices (comparative examples) in which such measures were not taken against heat, and Device C is a device in which such measures were taken against heat. Further, assuming the chip size of Device A is 100, the ratio of chip size of Device B to Device A is 53 and the ratio of chip size of Device C to Device A is 46. The measurement results were obtained by causing the liquid crystal drivers to carry out such driving that a display pattern most likely to cause heat generation was displayed and by finding saturation temperatures reached when no measures were taken to dissipate heat.
As shown above in Table 1, whereas Device A generated a heat of 190° C., Device B, which is equivalent in function to Device A, generated a heat of 240° C. It should be noted here that although Device B is equivalent in function to Device A, Device B is a device whose chip size has been reduced by miniaturization of the wires and the like. Therefore, in Device B, the miniaturized wires caused increased resistance and hence an increased amount of heat generated.
Furthermore, Device C, which is equivalent in function to Devices A and B, is a device whose chip size has been more reduced than that of Device B by miniaturization of the wires and the like. Without measures being taken against heat as described in the present embodiment, Device C would reach a temperature equal to higher than that of Device B. However, since heat generation was suppressed by taking measures against heat as described in the present embodiment, the result of measurement of the temperature of the device was 190° C.
The present invention is not limited to the description of the embodiments above, but may be altered by a skilled person within the scope of the claims. An embodiment based on a proper combination of technical means disclosed in different embodiments is encompassed in the technical scope of the present invention.
The present invention can suppress the generation of heat in a semiconductor device and, for example, can be used for a driving circuit of a thin-shaped display device such as a liquid crystal display device.
Number | Date | Country | Kind |
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2009-203100 | Sep 2009 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP2010/063641 | 8/11/2010 | WO | 00 | 2/29/2012 |
Publishing Document | Publishing Date | Country | Kind |
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WO2011/027655 | 3/10/2011 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
5585666 | Imamura | Dec 1996 | A |
6204567 | Imamura | Mar 2001 | B1 |
6703792 | Kawada et al. | Mar 2004 | B2 |
6759732 | Imamura | Jul 2004 | B1 |
7863652 | Toyoshima et al. | Jan 2011 | B2 |
20070290302 | Nakagawa et al. | Dec 2007 | A1 |
20080083937 | Nomiyama et al. | Apr 2008 | A1 |
20090057808 | Nakayama | Mar 2009 | A1 |
20110090005 | Nakayama | Apr 2011 | A1 |
20110242714 | Hirota | Oct 2011 | A1 |
Number | Date | Country |
---|---|---|
2001-15694 | Jan 2001 | JP |
2006-80167 | Mar 2006 | JP |
2008-98244 | Apr 2008 | JP |
2009-59956 | Mar 2009 | JP |
2007-0119530 | Dec 2007 | KR |
Entry |
---|
International Search Report issued in PCT/JP2010/063641, dated Sep. 7, 2010. |
Number | Date | Country | |
---|---|---|---|
20120153510 A1 | Jun 2012 | US |