Patent Application
20160035657
This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2014-159047, filed on Aug. 4, 2014; the entire contents of which are incorporated herein by reference.
Embodiments described herein relate generally to a semiconductor device and a semiconductor module.
Power electronics are widely used in various technology areas such as home appliances, an automobile, a railroad, power transmission, and power generation.
A semiconductor module used in the field of power electronics includes a plurality of semiconductor devices and each semiconductor device has a board on which a patterned wire is provided, and a semiconductor element which is provided on the board.
The plurality of semiconductor devices are bonded to each other using a metallic wire.
The semiconductor module is desired to have a large current capacity.
However, if the number of metallic wires is increased in order to increase the current capacity, an area in which the metallic wires are bonded to each other becomes large and the size of the semiconductor module is increased.
If the metallic wire becomes thicker, reliability for bonding by using a wire-bonding method may be lowered.
For this reason, development of a semiconductor device and a semiconductor module which can obtain reduction in size and improvement of reliability is desired.
In general, according to one embodiment, a semiconductor device includes a first base portion, a second base portion, a third base portion, and a semiconductor element. The first base portion is extended in a first direction. The second base portion is provided parallel with the first base portion in a second direction intersecting with the first direction and is extended in the first direction. The third base portion is provided parallel between the first base portion and the second base portion in the second direction and is extended in the first direction. The semiconductor element is provided on at least one of the first base portion, the second base portion, and the third base portion. A first end portion of the first base portion in the first direction is positioned closer to a side on which the semiconductor element is provided than a second end portion on a side opposite to the first end portion of the first base portion, in a third direction intersecting with the first direction and the second direction. A third end portion on the first end portion side of the second base portion is positioned closer to the side on which the semiconductor element is provided than a fourth end portion on the second end portion side of the second base portion in the third direction. A fifth end portion on the first end portion side of the third base portion is positioned closer to the side on which the semiconductor element is provided than a sixth end portion on the second end portion side of the third base portion in the third direction.
Hereinafter, embodiments will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals and descriptions thereof will be appropriately omitted.
In the drawings, arrows X, Y, and Z represent three directions which are orthogonal to each other. For example, a direction vertical to a major surface of a board 11 is set as a Z-direction (corresponding to an example of a third direction). One direction in a plane which is parallel with the major surface of the board 11 is set as a Y-direction (corresponding to an example of a second direction). A direction vertical to the Z-direction and the Y-direction is set as an X-direction (corresponding to an example of a first direction).
A semiconductor device 1 according to a first embodiment will be described.
As illustrated in
The semiconductor element 2 is provided on a base portion 3b (corresponding to an example of a third base portion).
The semiconductor element 2 may be provided on any one of a base portion 3a (corresponding to an example of a first base portion), the base portion 3b, and a base portion 3c (corresponding to an example of a second base portion).
A semiconductor element 2a may be a metal-oxide-semiconductor field-effect transistor (MOSFET).
When being a MOSFET, the semiconductor element 2a may have electrodes on a surface and a back surface.
In this case, a source electrode and a gate electrode may be provided on the surface which is a surface opposite to the base portion 3b side.
That is, the source electrode and the gate electrode of the MOSFET may be exposed from the case 4.
The source electrode is electrically connected to the base portion 3c through the wire 5a1.
The gate electrode is electrically connected to the base portion 3a through the wire 5a2.
A drain electrode may be provided on the back surface which is a surface on the base portion 3b side.
The drain electrode is electrically connected to the base portion 3b by using a bonding member such as soldering.
A semiconductor element 2b may be a diode or the like, for example.
When being a diode, the semiconductor element 2b may have electrodes on a surface and a back surface.
In this case, an anode electrode may be provided on the surface which is the surface opposite to the base portion 3b side.
That is, the anode electrode of the diode may be exposed from the case 4.
The anode electrode is electrically connected to the base portion 3c through the wire 5b.
A cathode electrode may be provided on the back surface which is the surface on the base portion 3b side.
The cathode electrode is electrically connected to the base portion 3b by using a bonding member such as soldering. A type or a bonding method of the semiconductor element 2 is not limited to the above description and may be appropriately changed.
As illustrated in
The base portion 3a, the base portion 3b, and the base portion 3c are separated at a predetermined distance and arranged in the Y-direction. Each of the base portion 3a, the base portion 3b, and the base portion 3c is extended in the X-direction.
The base portion 3a, the base portion 3b, and the base portion 3c are integrally formed by the case 4.
An end portion 3a1 (corresponding to an example of a second end portion) of the base portion 3a, an end portion 3b1 (corresponding to an example of a sixth end portion) of the base portion 3b, and an end portion 3c1 (corresponding to an example of a fourth end portion) of the base portion 3c protrude from one end face of the case 4 in the X-direction.
An end portion 3a2 (corresponding to an example of a first end portion) of the base portion 3a, an end portion 3b2 (corresponding to an example of a fifth end portion) of the base portion 3b, and an end portion 3c2 (corresponding to an example of a third end portion) of the base portion 3c protrude from another end face of the case 4 in the X-direction.
The end portion 3a1 is in the same plane as that of an area of the base portion 3a to which the wire 5a is bonded, in the Z-direction.
The end portion 3b1 is in the same plane as that of an area of the base portion 3b at which the semiconductor elements 2a and 2b are provided, in the Z-direction.
The end portion 3c1 is in the same plane as that of an area of the base portion 3c to which the wire 5a1 and the wire 5b are bonded, in the Z-direction.
A gap 3a3 is provided under the end portion 3a2.
If a thickness dimension of the base portion 3a is set as T1a and a dimension of the gap 3a3 in the Z-direction is set as T2a, T1a≦T2a is satisfied.
In this case, the dimension T2a is favorable to be the same as or slightly longer than the thickness dimension T1a.
A gap 3b3 is provided under the end portion 3b2.
If a thickness dimension of the base portion 3b is set as T1b and a dimension of the gap 3b3 in the Z-direction is set as T2b, T1b≦T2b is satisfied.
In this case, the dimension T2b is favorable to be the same as or slightly longer than the thickness dimension T1b.
A gap 3c3 is provided under the end portion 3c2.
If a thickness dimension of the base portion 3c is set as T1c and a dimension of the gap 3c3 in the Z-direction is set as T2c, T1c≦T2c is satisfied.
In this case, the dimension T2c is favorable to be the same as or slightly longer than the thickness dimension T1c.
The end portion 3a2, the end portion 3b2, and the end portion 3c2 may be formed by plastic working (bending processing).
Materials of the base portion 3a, the base portion 3b, and the base portion 3c are not particularly limited as long as the material has conductivity.
In this case, if performing of plastic working, friction stir welding, or the like is considered, the materials of the base portion 3a, the base portion 3b, and the base portion 3c are favorable to be aluminium, copper, or the like, for example.
For example, nickel plating may be performed on surfaces of the base portion 3a, the base portion 3b, and the base portion 3c. A thickness dimension in nickel plating may be 10 μm, for example.
Thickness dimensions of the base portion 3a, the base portion 3b, and the base portion 3c are not particularly limited.
In this case, if performing of plastic working, friction stir welding, or the like is considered, the thickness dimensions of the base portion 3a, the base portion 3b, and the base portion 3c may be appropriately 1 mm, for example.
The case 4 covers a portion of each of the base portion 3a, the base portion 3b, and the base portion 3c which are arranged in the Y-direction.
A hole portion 4a (corresponding to an example of a first exposure portion), a hole portion 4b (corresponding to an example of a third exposure portion), and a hole portion 4c (corresponding to an example of a second exposure portion) are provided in the case 4.
The hole portion 4a is provided in the base portion 3a.
A face to which the wire 5a2 of the base portion 3a is bonded is exposed in the hole portion 4a.
The hole portion 4b is provided in the base portion 3b.
A face to which the semiconductor elements 2a and 2b of the base portion 3b are bonded is exposed in the hole portion 4b.
The hole portion 4c is provided in the base portion 3c.
A face to which the wires 5a1 and 5b of the base portion 3c are bonded is exposed in the hole portion 4c.
The base portion 3a is exposed on a face of the case 4 opposite to a face on which the hole portion 4a is opened.
The base portion 3b is exposed on a face of the case 4 opposite to a face on which the hole portion 4b is opened.
The base portion 3c is exposed on a surface of the case 4 opposite to a face on which the hole portion 4c is opened.
Faces of the base portions 3a to 3c which are exposed from the face opposite to the face on which the hole portions 4a to 4c are opened are set to be a disposition surface when the semiconductor device 1 is provided on the board 11, which will be described later.
A material of the case 4 is not particularly limited as long as the material has insulation properties.
In this case, if processability when the base portion 3a, the base portion 3b, and the base portion 3c are integrally formed is considered, the material of the case 4 is favorable to be a resin material, for example.
An example of the resin material may include epoxy resin and like, for example.
A silica filler and the like may be added to the resin material.
The wires 5a1, 5a2, and 5b may be an aluminum wire or the like which has a diameter dimension of appropriately 500 μm.
The wires 5a1, 5a2, and 5b may be bonded by using a wire bonding method, for example.
Dimensions, materials, the number of wires, a bonding method, and the like of the wires 5a1, 5a2, and 5b are not limited to the above descriptions and may be appropriately changed.
In the semiconductor device 1 according to the embodiment, an end portion 3a1 of an adjacent semiconductor device 1 is provided in the gap 3a3 under the end portion 3a2. An end portion 3b1 of an adjacent semiconductor device 1 is provided in the gap 3b3 under the end portion 3b2. An end portion 3c1 of an adjacent semiconductor device 1 is provided in the gap 3c3 under the end portion 3c2.
Thus, the end portion 3a1 and the end portion 3a2, the end portion 3b1 and the end portion 3b2, and the end portion 3c1 and the end portion 3c2 may be respectively directly bonded to each other.
For this reason, it is possible to increase current capacity, compared to when bonding is performed through the wire and the like. It is possible to obtain reduction in size and improvement of reliability.
Next, a semiconductor module 100 according to a second embodiment will be described.
In the following descriptions, a case where the semiconductor module 100 includes a plurality of the same type semiconductor devices 1 will be described as an example.
For example, the descriptions may be similarly applied to, for example, a case when the semiconductor module 100 includes a plurality of semiconductor devices which have different type semiconductor elements.
In
As illustrated in
As illustrated in
The plurality of semiconductor devices 1 are bonded onto the board 11, for example.
The plurality of semiconductor devices 1 are arranged in the X-direction.
An end portion 3a2 of a base portion 3a of an adjacent semiconductor device 1 is provided on the end portion 3a1 of the base portion 3a.
An end portion 3b2 of a base portion 3b of an adjacent semiconductor device 1 is provided on the end portion 3b1 of the base portion 3b.
An end portion 3c2 of a base portion 3c of an adjacent semiconductor device 1 is provided on the end portion 3c1 of the base portion 3c.
The end portion 3a1 and the end portion 3a2, the end portion 3b1 and the end portion 3b2, and the end portion 3c1 and the end portion 3c2 are respectively bonded.
That is, the plurality of semiconductor devices 1 are connected to each other in the X-direction.
A bonding method is not particularly limited and, for example, a friction stir welding method, an ultrasonic bonding method, or the like is favorable.
The number of the semiconductor devices 1 is not limited to the description and two semiconductor devices 1 or more may be provided.
The frame portion 6 is provided on the board 11.
The frame portion 6 is bonded onto the board 11, for example.
The frame portion 6 surrounds the plurality of semiconductor devices 1.
A material of the frame portion 6 is not particularly limited as long as the material has insulation properties.
In this case, if processability is considered, the material of the frame portion 6 is favorable to be a resin material, for example.
An example of the resin material may include epoxy resin and like, for example.
One end portion of the terminal 7 is provided on the frame portion 6.
A hole portion 7a is provided in the one end portion side of the terminal 7.
The hole portion 7a is provided just on the fastening portion 13 which is buried in the frame portion 6. For this reason, the terminal 7 is attached along with a solderless terminal (not illustrated) when the solderless terminal (not illustrated) and the like are fastened to the fastening portion 13. The one end portion of the terminal 7 may be bonded onto the frame portion 6.
Another end portion of the terminal 7 is bonded onto the end portion 3b1 of the base portion 3b.
A bonding method is not particularly limited and, for example, a friction stir welding method, an ultrasonic bonding method, or the like is favorable.
The terminal 7 may be formed by plastic working.
One end portion of the terminal 8 is provided on the frame portion 6.
A hole portion 8a is provided in the one end portion of the terminal 8.
The hole portion 8a is provided just on the fastening portion 13 which is buried in the frame portion 6. For this reason, the terminal 8 is attached along with a solderless terminal (not illustrated) when the solderless terminal (not illustrated) and the like are fastened to the fastening portion 13. The one end portion of the terminal 8 may be bonded onto the frame portion 6.
Another end portion of the terminal 8 is bonded onto the end portion 3c2 of the base portion 3c.
A bonding method is not particularly limited and, for example, a friction stir welding method, an ultrasonic bonding method, or the like is favorable.
The terminal 8 may be formed by plastic working.
Materials of the terminal 7 and the terminal 8 are not particularly limited as long as the material has conductivity.
In this case, if performing of plastic working, friction stir welding, or the like is considered, the materials of the terminal 7 and the terminal 8 are favorable to be aluminium, copper, or the like, for example.
Thickness dimensions of the terminal 7 and the terminal 8 are not particularly limited.
In this case, if performing of plastic working, friction stir welding, or the like is considered, the thickness dimensions of the terminal 7 and the terminal 8 may be appropriately 1 mm.
The connector 9 is electrically connected to the end portion 3a2 of the base portion 3a and the terminal 10.
One end portion of the connector 9 is bonded onto the end portion 3a2 of the base portion 3a.
Another end portion of the connector 9 is bonded onto the terminal 10.
Bonding of the connector 9 and the end portion 3a2 and bonding of the connector 9 and the terminal 10 are not particularly limited, for example, a friction stir welding method, an ultrasonic bonding method, or the like is favorable.
The terminal 10 is buried in the frame portion 6.
The terminal 10 may be buried in the frame portion 6 by using an insert molding method and the like.
A material of the terminal 10 is not particularly limited as long as the material has conductivity.
The material of the terminal 10 may be aluminium, copper, or the like, for example.
The board 11 has a plate shape.
A thickness dimension of the board 11 may be appropriately 2 mm.
A material of the board 11 is not particularly limited as long as the material has insulation properties.
In this case, if dissipation of heat generated in the semiconductor device 1 is considered, the material of the board 11 is favorable to be, for example, ceramics such as aluminum oxide and aluminum nitride.
The sealing portion 12 is provided in the frame portion 6 and covers the plurality of the semiconductor devices 1.
If the sealing portion 12 is provided, the semiconductor elements 2a and 2b, and the wires 5a1, 5a2, and 5b may be covered. Thus, it is possible to suppress moistures, contaminants, and the like from being brought into contact with the semiconductor elements 2a and 2b or the wires 5a1, 5a2, and 5b. It is possible to suppress applying of mechanical external force to the semiconductor elements 2a and 2b or the wires 5a1, 5a2, and 5b. For this reason, it is possible to improve reliability of the semiconductor module 100.
A material of the sealing portion 12 is not particularly limited as long as the material has insulation properties.
In this case, if mitigation of thermal stress due to heat generated in the semiconductor device 1 is considered, the material of the sealing portion 12 is favorable to be soft resin.
An example of the soft resin may include a silicone resin and the like, for example.
The fastening portion 13 is buried in the frame portion 6.
The fastening portion 13 may be buried in the frame portion 6 by using an insert molding method, and the like.
For example, a female screw is processed on the fastening portion 13. The fastening portion 13 may be a nut or the like, for example.
In the semiconductor module 100 according to the embodiment, the end portion 3a2 and the end portion 3a1 of the adjacent semiconductor device 1, the end portion 3b2 and the end portion 3b1 of the adjacent semiconductor device 1, and the end portion 3c2 and the end portion 3c1 of the adjacent semiconductor device 1 are respectively overlapped.
Thus, the end portion 3a1 and the end portion 3a2, the end portion 3b1 and the end portion 3b2, and the end portion 3c1 and the end portion 3c2 are respectively directly bonded.
For this reason, it is possible to increase current capacity, compared to when bonding is performed through the wire and the like. It is possible to obtain reduction in size and improvement of reliability.
Next, a manufacturing method of a semiconductor device 1 according to a third embodiment and a manufacturing method of a semiconductor module 100 will be described.
First, as illustrated in
At this time, an end portion 3a2 is bent to provide a gap 3a3 under the end portion 3a2.
An end portion 3b2 is bent to provide a gap 3b3 under the end portion 3b2.
An end portion 3c2 is bent to provide a gap 3c3 under the end portion 3c2.
The base portion 3a, the base portion 3b, the base portion 3c, the end portion 3a2, the end portion 3b2, and the end portion 3c2 may be processed by using a mold.
Then, as illustrated in
Formation of the case 4 causes the base portion 3a, the base portion 3b, and the base portion 3c to be integrally formed.
The case 4 may be formed from epoxy resin and the like to which, for example, a silica filler or the like is added.
A hole portion 4a, a hole portion 4b, and a hole portion 4c are provided in the case 4 and a portion of each of the base portion 3a, the base portion 3b, and the base portion 3c is exposed in the case 4.
An end portion 3a1, an end portion 3b1, an end portion 3c1, the end portion 3a2, the end portion 3b2, and the end portion 3c2 protrude from the case 4.
Then, as illustrated in
For example, semiconductor elements 2a and 2b are mounted on the base portion 3b which is exposed in the hole portion 4b. At this time, a drain electrode of the semiconductor element 2a is electrically connected to the base portion 3b through a bonding member such as soldering.
A cathode electrode of the semiconductor element 2b is connected to the base portion 3b through a bonding member such as soldering.
Then, a source electrode of the semiconductor element 2a and the base portion 3a which is exposed in the hole portion 4a are electrically connected to each other by using a wire 5a2.
A gate electrode of the semiconductor element 2a and the base portion 3c which is exposed in the hole portion 4c are electrically connected to each other by using a wire 5a1.
An anode electrode of the semiconductor element 2b and the base portion 3c which is exposed in the hole portion 4c are electrically connected to each other by using the wire 5b.
As described above, a plurality of semiconductor devices 1 may be integrally manufactured.
Then, the semiconductor device 1 is cut off from the frame member 30.
For example, the semiconductor device 1 is cut off from the frame member 30 by using a mold.
In this manner, the semiconductor device 1 illustrated in
Then, as illustrated in
An end portion 3a2 of a base portion 3a of an adjacent semiconductor device 1 is placed on the end portion 3a1 of the base portion 3a.
An end portion 3b2 of a base portion 3b of the adjacent semiconductor device 1 is placed on the end portion 3b1 of the base portion 3b.
An end portion 3c2 of a base portion 3c of the adjacent semiconductor device 1 is placed on the end portion 3c1 of the base portion 3c.
An end portion of a terminal 7 is placed on the end portion 3b1 of the base portion 3b.
An end portion of a terminal 8 is placed on the end portion 3c2 of the base portion 3c.
An end portion of a connector 9 is placed on the end portion 3a2 of the base portion 3a.
The end portion 3a1 and the end portion 3a2, the end portion 3b1 and the end portion 3b2, the end portion 3c1 and the end portion 3c2, the end portion 3b1 and the terminal 7, the end portion 3c2 and the terminal 8, and the end portion 3a2 and the connector 9 are respectively bonded using a friction stir welding method.
In
In a friction stir welding method, the tool 31 as illustrated in
The tool 31 may include a probe 32 which has a groove on a side surface, and a shoulder 33 which is connected to the probe 32.
The probe 32 may have a diameter dimension of appropriately 1.5 mm and a height dimension of appropriately 1.2 mm, for example.
A diameter dimension of the shoulder 33 may be appropriately 4 mm, for example.
The tool 31 is rotated at the number of rotation which is appropriately 2000 rpm and the rotating tool 31 is pressed on an overlapped portion.
If the rotating tool 31 is pressed, friction heat causes a material of the overlapped portion to be softened.
The probe 32 is inserted into the softened material and is scanned in a horizontal direction at a speed of 500 mm per minute, for example.
If scanning is performed, the softened material is stirred and mixed and the overlapped portion is bonded.
Bonding may be performed by using an ultrasonic bonding method and the like.
Then, a frame portion 6 is bonded onto a board 11.
Then, the plurality of semiconductor devices 1 which are linked to each other is bonded onto a portion of the board 11 which is exposed in the frame portion 6.
An adhesive may be a silicone adhesive having thermal conductivity of appropriately 6 W/m·k.
Then, the connector 9 is bonded onto a terminal 10 which is buried in the frame portion 6.
Bonding may be performed by using a friction stir welding method, an ultrasonic bonding method, and the like, for example.
Then, the inside of the frame portion 6 is filled with silicone resin and the like to form a sealing portion 12.
In this manner, the semiconductor module 100 may be manufactured.
The manufacturing method of the semiconductor device 1 according to the embodiment and the manufacturing method of the semiconductor module 100 are described, but are not limited to specific numerical values, materials, and the like.
Semiconductor devices 1a to is and a semiconductor module 100a which will be described later may be manufactured by similar procedures.
Then, a semiconductor device 1a according to a fourth embodiment will be described.
The semiconductor elements 2a and 2b, the wires 5a1, 5a2, and 5b, and the hole portions 4a, 4b, and 4c, and the like will be omitted in order to avoid complexity.
As illustrated in
Two protrusions 3a4 are respectively provided on end faces of both sides of the end portion 3a2 in the Y-direction. The two protrusions 3a4 are extended on the gap 3a3 side (end portion 3a1 side in the Z-direction). The end portion 3a1 of the adjacent semiconductor device 1a is inserted between the two protrusions 3a4.
Two protrusions 3b4 are respectively provided on end faces of both sides of the end portion 3b2 in the Y-direction. The two protrusions 3b4 are extended on the gap 3b3 side (end portion 3b1 side in the Z-direction). The end portion 3b1 of the adjacent semiconductor device 1a is inserted between the two protrusions 3b4.
Two protrusions 3c4 are respectively provided on end faces of both sides of the end portion 3c2 in the Y-direction. The two protrusions 3c4 are extended on the gap 3c3 side (end portion 3c1 side in the Z-direction). The end portion 3c1 of the adjacent semiconductor device 1a is inserted between the two protrusions 3c4.
The protrusions may be provided on the end portion 3a1, the end portion 3b1, and the end portion 3c1.
That is, a protrusion (corresponding to an example of a fourth protrusion) may be provided on the end portion 3a1 and protrude to the end portion 3a2 side in the Z-direction.
A protrusion (corresponding to an example of a fifth protrusion) may be provided on the end portion 3b1 and protrude to the end portion 3b2 side in the Z-direction.
A protrusion (corresponding to an example of a sixth protrusion) may be provided on the end portion 3c1 and protrude to the end portion 3c2 side in the Z-direction.
The end portions of the base portions of the adjacent semiconductor devices are overlapped at a portion at which bonding is performed by using a friction stir welding method, an ultrasonic bonding method, or the like.
In this case, force when bonding processing is performed is applied to the end portion.
For this reason, a position of the end portion may be shifted.
The portion at which bonding is performed may be supported by using a processing jig, but, a space for the processing jig supporting the portion is required and the dimensions of the semiconductor device in the Y-direction may be increased.
In the semiconductor device 1a according to the embodiment, since the protrusions 3a4, 3b4, 3c4 are provided, it is possible to suppress shift of the position of the portion at which bonding is performed.
For this reason, it is possible to obtain improvement of bonding quality and reduction in size of the semiconductor device 1a.
A semiconductor device 1b according to a fifth embodiment will be described.
The semiconductor elements 2a and 2b, the wires 5a1, 5a2, and 5b, and the hole portions 4a, 4b, and 4c, and the like will be omitted in order to avoid complexity.
As illustrated in
The protrusion 3a5 is extended from the end portion 3a2 to the gap 3a3 side (end portion 3a1 side in the Z-direction).
The protrusion 3b5 is extended from the end portion 3b2 to the gap 3b3 side (end portion 3b1 side in the Z-direction).
The protrusion 3c5 is extended from the end portion 3c2 to the gap 3c3 side (end portion 3c1 side in the Z-direction).
The hole portion 3a6 for inserting the protrusion 3a5 is provided in the end portion 3a1.
The hole portion 3b6 for inserting the protrusion 3b5 is provided in the end portion 3b1.
The hole portion 3c6 for inserting the protrusion 3c5 is provided in the end portion 3c1.
A case where each of the protrusions 3a5, 3b5, 3c5, and the hole portions 3a6, 3b6, and 3c6 is provided by two is described.
However, each of the protrusions 3a5, 3b5, and 3c5, and the hole portions 3a6, 3b6, and 3c6 may be provided by at least one.
A taper for easy insertion may be provided on the protrusions 3a5, 3b5, and 3c5.
The protrusions may be provided on the end portion 3a1, the end portion 3b1, and the end portion 3c1 and the hole portions may be provided on the end portions 3a2, 3b2, and 3c2.
That is, the protrusion (corresponding to an example of a fourth protrusion) may be provided on the end portion 3a1 and protrude to the end portion 3a2 side in the Z-direction.
The protrusion (corresponding to an example of a fifth protrusion) may be provided on the end portion 3b1 and protrude to the end portion 3b2 side in the Z-direction.
The protrusion (corresponding to an example of a sixth protrusion) may be provided on the end portion 3c1 and protrude to the end portion 3c2 side in the Z-direction.
A hole portion (corresponding to an example of a fourth hole portion) which is provided on the end portion 3a2, a hole portion (corresponding to an example of a sixth hole portion) which is provided on the end portion 3b2, and a hole portion (corresponding to an example of a fifth hole portion) which is provided on the end portion 3c2 may be provided.
In the semiconductor device 1b according to the embodiment, since the protrusions 3a5, 3b5, and 3c5, and the hole portions 3a6, 3b6, 3c6 are provided, it is possible to suppress shift of the position of the portion at which bonding is performed.
For this reason, it is possible to obtain improvement of bonding quality and reduction in size of the semiconductor device 1b.
Next, a semiconductor device 1c and a semiconductor module 100a according to a sixth embodiment will be described.
The hole portions 4a, 4b, and 4c, the sealing portion 12, and the like will be omitted in order to avoid complexity.
As illustrated in
A drain electrode of a semiconductor element 2a is electrically connected to a base portion 3a in the semiconductor device 1c.
A source electrode is electrically connected to a base portion 3c through the wire 5a1.
A gate electrode is electrically connected to a base portion 3b through the wire 5a2.
A cathode electrode of a semiconductor element 2b is electrically connected to the base portion 3a.
An anode electrode is electrically connected to the base portion 3c through the wire 5b.
The semiconductor device 1c further includes a protrusion 3a7 (corresponding to an example of a seventh protrusion) and a protrusion 3c7 (corresponding to an example of an eighth protrusion).
The protrusion 3a7 protrudes from an end face of the end portion 3a1 and an end face of the end portion 3a2 in the Y-direction toward the outside of the semiconductor device 1c.
The protrusion 3c7 protrudes from an end face of the end portion 3c1 and an end face of the end portion 3c2 in the Y-direction toward the outside of the semiconductor device 1c.
As illustrated in
Thus, the protrusion 3c7 and a protrusion 3a7 of an adjacent semiconductor device is come into contact with each other in the Y-direction.
That is, the semiconductor module 100a has a 2-in-1 configuration in which a plurality of semiconductor devices 1c is connected in series to each other to have two stages.
The semiconductor device 1c according to the embodiment includes the protrusions 3a7 and 3c7, and thus it is easy that the semiconductor devices is are arranged in a matrix using series and parallel.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions. Moreover, above-mentioned embodiments can be combined mutually and can be carried out.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2014-159047 | Aug 2014 | JP | national |
